Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (10970) > Seite 101 nach 183
Foto | Bezeichnung | Hersteller | Beschreibung |
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2N5115JTXL02 | Vishay Siliconix | Description: JFET P-CH 30V TO-18 |
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2N5115JTXV02 | Vishay Siliconix | Description: JFET P-CH 30V TO-18 |
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2N5116-E3 | Vishay Siliconix |
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2N5116JAN02 | Vishay Siliconix |
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2N5116JTVL02 | Vishay Siliconix | Description: JFET P-CH 30V TO-18 |
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2N5116JTX02 | Vishay Siliconix |
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2N5116JTXL02 | Vishay Siliconix |
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2N5116JTXV02 | Vishay Siliconix |
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2N5432 | Vishay Siliconix |
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2N5432-2 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-206AC, TO-52-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: TO-206AC (TO-52) Power - Max: 300 mW Voltage - Cutoff (VGS off) @ Id: 4 V @ 3 nA Current - Drain (Idss) @ Vds (Vgs=0): 150 mA @ 15 V |
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2N5432-E3 | Vishay Siliconix |
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2N5433 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-206AC, TO-52-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: TO-206AC (TO-52) Part Status: Obsolete Power - Max: 300 mW Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V |
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2N5433-2 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-206AC, TO-52-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: TO-206AC (TO-52) Part Status: Obsolete Power - Max: 300 mW Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V |
Produkt ist nicht verfügbar |
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2N5433-E3 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-206AC, TO-52-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: TO-206AC (TO-52) Part Status: Obsolete Power - Max: 300 mW Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V |
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2N5545JTX01 | Vishay Siliconix | Description: JFET N-CH 50V TO-71 |
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2N5545JTXL01 | Vishay Siliconix | Description: JFET N-CH 50V TO-71 |
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2N5545JTXV01 | Vishay Siliconix | Description: JFET N-CH 50V TO-71 |
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2N5546JTX01 | Vishay Siliconix | Description: JFET N-CH 50V TO-71 |
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2N5546JTXL01 | Vishay Siliconix | Description: JFET N-CH 50V TO-71 |
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2N5546JTXV01 | Vishay Siliconix | Description: JFET N-CH 50V TO-71 |
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2N5547JTX01 | Vishay Siliconix | Description: JFET N-CH 50V TO-71 |
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2N5547JTXL01 | Vishay Siliconix | Description: JFET N-CH 50V TO-71 |
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2N5547JTXV01 | Vishay Siliconix | Description: JFET N-CH 50V TO-71 |
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2N6660-2 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-205AD (TO-39) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
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2N6660-E3 | Vishay Siliconix |
![]() Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-205AD (TO-39) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
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2N6660JTVP02 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-205AD (TO-39) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
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2N6660JTX02 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-205AD (TO-39) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
Produkt ist nicht verfügbar |
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2N6660JTXL02 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-205AD (TO-39) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
Produkt ist nicht verfügbar |
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2N6660JTXP02 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-205AD (TO-39) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
Produkt ist nicht verfügbar |
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2N6660JTXV02 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-205AD (TO-39) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
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2N6661-2 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 90 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
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2N6661-E3 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 90 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
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2N6661JAN02 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 90 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
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2N6661JTVP02 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 90 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
Produkt ist nicht verfügbar |
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2N6661JTX02 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 90 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
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2N6661JTXL02 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 90 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
Produkt ist nicht verfügbar |
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2N6661JTXP02 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 90 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
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2N6661JTXV02 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 90 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
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3N163 | Vishay Siliconix |
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3N163-2 | Vishay Siliconix |
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3N163-E3 | Vishay Siliconix |
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3N164 | Vishay Siliconix |
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DG180AP | Vishay Siliconix |
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DG181AA | Vishay Siliconix |
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DG181AA/883 | Vishay Siliconix |
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DG181AP | Vishay Siliconix |
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DG181AP/883 | Vishay Siliconix |
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DG183AP/883 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 10Ohm Supplier Device Package: 16-DIP Voltage - Supply, Dual (V±): ±15V Switch Circuit: DPST - NO Multiplexer/Demultiplexer Circuit: 2:1 Switch Time (Ton, Toff) (Max): 400ns, 200ns Channel Capacitance (CS(off), CD(off)): 21pF, 17pF Current - Leakage (IS(off)) (Max): 10nA Number of Circuits: 2 |
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DG183BP | Vishay Siliconix |
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DG184AP | Vishay Siliconix |
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DG184AP/883 | Vishay Siliconix |
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DG184AP/883L | Vishay Siliconix |
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DG184BP | Vishay Siliconix |
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DG186AA/883 | Vishay Siliconix |
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DG186AP/883 | Vishay Siliconix |
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DG187AA/883 | Vishay Siliconix |
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DG187AP | Vishay Siliconix |
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DG187AP/883 | Vishay Siliconix |
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DG190AP | Vishay Siliconix |
![]() Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 30Ohm Supplier Device Package: 16-DIP Voltage - Supply, Dual (V±): ±15V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Switch Time (Ton, Toff) (Max): 150ns, 130ns Channel Capacitance (CS(off), CD(off)): 9pF, 6pF Current - Leakage (IS(off)) (Max): 1nA Number of Circuits: 2 |
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DG190AP/883 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 30Ohm Supplier Device Package: 16-DIP Voltage - Supply, Dual (V±): ±15V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Switch Time (Ton, Toff) (Max): 150ns, 130ns Channel Capacitance (CS(off), CD(off)): 9pF, 6pF Current - Leakage (IS(off)) (Max): 1nA Number of Circuits: 2 |
Produkt ist nicht verfügbar |
2N5115JTXL02 |
Hersteller: Vishay Siliconix
Description: JFET P-CH 30V TO-18
Description: JFET P-CH 30V TO-18
Produkt ist nicht verfügbar
2N5115JTXV02 |
Hersteller: Vishay Siliconix
Description: JFET P-CH 30V TO-18
Description: JFET P-CH 30V TO-18
Produkt ist nicht verfügbar
2N5116JAN02 |
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Hersteller: Vishay Siliconix
Description: JFET P-CH 30V TO-18
Description: JFET P-CH 30V TO-18
Produkt ist nicht verfügbar
2N5116JTVL02 |
Hersteller: Vishay Siliconix
Description: JFET P-CH 30V TO-18
Description: JFET P-CH 30V TO-18
Produkt ist nicht verfügbar
2N5116JTX02 |
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Hersteller: Vishay Siliconix
Description: JFET P-CH 30V TO-18
Description: JFET P-CH 30V TO-18
Produkt ist nicht verfügbar
2N5116JTXL02 |
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Hersteller: Vishay Siliconix
Description: JFET P-CH 30V TO-18
Description: JFET P-CH 30V TO-18
Produkt ist nicht verfügbar
2N5116JTXV02 |
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Hersteller: Vishay Siliconix
Description: JFET P-CH 30V TO-18
Description: JFET P-CH 30V TO-18
Produkt ist nicht verfügbar
2N5432-2 |
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Hersteller: Vishay Siliconix
Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 4 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 150 mA @ 15 V
Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 4 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 150 mA @ 15 V
Produkt ist nicht verfügbar
2N5433 |
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Hersteller: Vishay Siliconix
Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Produkt ist nicht verfügbar
2N5433-2 |
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Hersteller: Vishay Siliconix
Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Produkt ist nicht verfügbar
2N5433-E3 |
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Hersteller: Vishay Siliconix
Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Produkt ist nicht verfügbar
2N5545JTX01 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Description: JFET N-CH 50V TO-71
Produkt ist nicht verfügbar
2N5545JTXL01 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Description: JFET N-CH 50V TO-71
Produkt ist nicht verfügbar
2N5545JTXV01 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Description: JFET N-CH 50V TO-71
Produkt ist nicht verfügbar
2N5546JTX01 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Description: JFET N-CH 50V TO-71
Produkt ist nicht verfügbar
2N5546JTXL01 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Description: JFET N-CH 50V TO-71
Produkt ist nicht verfügbar
2N5546JTXV01 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Description: JFET N-CH 50V TO-71
Produkt ist nicht verfügbar
2N5547JTX01 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Description: JFET N-CH 50V TO-71
Produkt ist nicht verfügbar
2N5547JTXL01 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Description: JFET N-CH 50V TO-71
Produkt ist nicht verfügbar
2N5547JTXV01 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Description: JFET N-CH 50V TO-71
Produkt ist nicht verfügbar
2N6660-2 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
2N6660-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
2N6660JTVP02 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
2N6660JTX02 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
2N6660JTXL02 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
2N6660JTXP02 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
2N6660JTXV02 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
2N6661-2 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
2N6661-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
2N6661JAN02 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
2N6661JTVP02 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
2N6661JTX02 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
2N6661JTXL02 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
2N6661JTXP02 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
2N6661JTXV02 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
3N163 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50MA TO72
Description: MOSFET P-CH 40V 50MA TO72
Produkt ist nicht verfügbar
3N163-2 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50MA TO72
Description: MOSFET P-CH 40V 50MA TO72
Produkt ist nicht verfügbar
3N163-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50MA TO72
Description: MOSFET P-CH 40V 50MA TO72
Produkt ist nicht verfügbar
3N164 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50MA TO72
Description: MOSFET P-CH 30V 50MA TO72
Produkt ist nicht verfügbar
DG180AP |
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Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 14-DIP
Description: IC SWITCH DUAL SPST 14-DIP
Produkt ist nicht verfügbar
DG181AA |
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Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST TO100-10
Description: IC SWITCH DUAL SPST TO100-10
Produkt ist nicht verfügbar
DG181AA/883 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST TO100-10
Description: IC SWITCH DUAL SPST TO100-10
Produkt ist nicht verfügbar
DG181AP |
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Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 14-DIP
Description: IC SWITCH DUAL SPST 14-DIP
Produkt ist nicht verfügbar
DG181AP/883 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 14-DIP
Description: IC SWITCH DUAL SPST 14-DIP
Produkt ist nicht verfügbar
DG183AP/883 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH DPST-NOX2 10OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 10Ohm
Supplier Device Package: 16-DIP
Voltage - Supply, Dual (V±): ±15V
Switch Circuit: DPST - NO
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 400ns, 200ns
Channel Capacitance (CS(off), CD(off)): 21pF, 17pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
Description: IC SWITCH DPST-NOX2 10OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 10Ohm
Supplier Device Package: 16-DIP
Voltage - Supply, Dual (V±): ±15V
Switch Circuit: DPST - NO
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 400ns, 200ns
Channel Capacitance (CS(off), CD(off)): 21pF, 17pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
Produkt ist nicht verfügbar
DG183BP |
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Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL DPST 16DIP
Description: IC SWITCH DUAL DPST 16DIP
Produkt ist nicht verfügbar
DG184AP |
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Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL DPST 16-DIP
Description: IC SWITCH DUAL DPST 16-DIP
Produkt ist nicht verfügbar
DG184AP/883 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL DPST 16-DIP
Description: IC SWITCH DUAL DPST 16-DIP
Produkt ist nicht verfügbar
DG184AP/883L |
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Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL DPST 16-DIP
Description: IC SWITCH DUAL DPST 16-DIP
Produkt ist nicht verfügbar
DG184BP |
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Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL DPST 16-DIP
Description: IC SWITCH DUAL DPST 16-DIP
Produkt ist nicht verfügbar
DG186AA/883 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT TO100-10
Description: IC SWITCH DUAL SPDT TO100-10
Produkt ist nicht verfügbar
DG186AP/883 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT 14DIP
Description: IC SWITCH DUAL SPDT 14DIP
Produkt ist nicht verfügbar
DG187AA/883 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT TO100-10
Description: IC SWITCH DUAL SPDT TO100-10
Produkt ist nicht verfügbar
DG187AP |
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Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT 14-DIP
Description: IC SWITCH DUAL SPDT 14-DIP
Produkt ist nicht verfügbar
DG187AP/883 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT 14-DIP
Description: IC SWITCH DUAL SPDT 14-DIP
Produkt ist nicht verfügbar
DG190AP |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 2 30OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 30Ohm
Supplier Device Package: 16-DIP
Voltage - Supply, Dual (V±): ±15V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 150ns, 130ns
Channel Capacitance (CS(off), CD(off)): 9pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
Description: IC SWITCH SPDT X 2 30OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 30Ohm
Supplier Device Package: 16-DIP
Voltage - Supply, Dual (V±): ±15V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 150ns, 130ns
Channel Capacitance (CS(off), CD(off)): 9pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
Produkt ist nicht verfügbar
DG190AP/883 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 2 30OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 30Ohm
Supplier Device Package: 16-DIP
Voltage - Supply, Dual (V±): ±15V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 150ns, 130ns
Channel Capacitance (CS(off), CD(off)): 9pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
Description: IC SWITCH SPDT X 2 30OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 30Ohm
Supplier Device Package: 16-DIP
Voltage - Supply, Dual (V±): ±15V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 150ns, 130ns
Channel Capacitance (CS(off), CD(off)): 9pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
Produkt ist nicht verfügbar