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Lieferzeit 14-21 Tag (e)
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1+ | 723.73 EUR |
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Technische Details 2N6661JTXV02 Vishay
Description: MOSFET N-CH 90V 860MA TO39, Packaging: Tube, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 860mA (Tc), Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V, Power Dissipation (Max): 725mW (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-39, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 90 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V.
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2N6661JTXV02 | Hersteller : Vishay |
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auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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2N6661JTXV02 | Hersteller : Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 90 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
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