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VBT5202-M3/4W VBT5202-M3/4W Vishay General Semiconductor - Diodes Division vt5202-m3.pdf Description: DIODE SCHOTTKY 200V 5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
auf Bestellung 7998 Stücke:
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9+2.18 EUR
50+ 1.75 EUR
100+ 1.39 EUR
500+ 1.17 EUR
1000+ 0.96 EUR
2000+ 0.9 EUR
5000+ 0.86 EUR
Mindestbestellmenge: 9
TZX2V7C-TAP TZX2V7C-TAP Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 2.7V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 500 mV
Qualification: AEC-Q101
auf Bestellung 7215 Stücke:
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46+0.39 EUR
69+ 0.26 EUR
141+ 0.13 EUR
500+ 0.1 EUR
1000+ 0.073 EUR
2000+ 0.063 EUR
5000+ 0.058 EUR
Mindestbestellmenge: 46
TZX2V7C-TAP TZX2V7C-TAP Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 2.7V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 500 mV
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
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10000+0.048 EUR
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TZX20C-TAP TZX20C-TAP Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 20V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
Qualification: AEC-Q101
auf Bestellung 9064 Stücke:
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70+ 0.25 EUR
143+ 0.12 EUR
500+ 0.1 EUR
1000+ 0.072 EUR
2000+ 0.062 EUR
5000+ 0.058 EUR
Mindestbestellmenge: 48
TZX20C-TAP TZX20C-TAP Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 20V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
Qualification: AEC-Q101
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10000+0.048 EUR
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GI752-E3/54 GI752-E3/54 Vishay General Semiconductor - Diodes Division gi750.pdf Description: DIODE GEN PURP 200V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 3187 Stücke:
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15+ 1.2 EUR
100+ 0.93 EUR
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SE30NJ-M3/I SE30NJ-M3/I Vishay General Semiconductor - Diodes Division se30nd_se30ng_se30nj.pdf Description: DIODE GEN PURP 600V 3A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
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14000+0.18 EUR
Mindestbestellmenge: 14000
SE30NJ-M3/I SE30NJ-M3/I Vishay General Semiconductor - Diodes Division se30nd_se30ng_se30nj.pdf Description: DIODE GEN PURP 600V 3A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 14150 Stücke:
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30+ 0.61 EUR
100+ 0.36 EUR
500+ 0.34 EUR
1000+ 0.23 EUR
2000+ 0.21 EUR
5000+ 0.2 EUR
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SE20NJ-M3/I SE20NJ-M3/I Vishay General Semiconductor - Diodes Division se20nd_se20ng_se20nj.pdf Description: DIODE GEN PURP 600V 2A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
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14000+0.2 EUR
Mindestbestellmenge: 14000
SE20NJ-M3/I SE20NJ-M3/I Vishay General Semiconductor - Diodes Division se20nd_se20ng_se20nj.pdf Description: DIODE GEN PURP 600V 2A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 14150 Stücke:
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21+0.84 EUR
27+ 0.66 EUR
100+ 0.39 EUR
500+ 0.37 EUR
1000+ 0.25 EUR
2000+ 0.23 EUR
5000+ 0.22 EUR
Mindestbestellmenge: 21
VTVS19ASMF-M3-08 VTVS19ASMF-M3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 18.7VWM 31VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 558pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12.44A
Voltage - Reverse Standoff (Typ): 18.7V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 31V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 27000 Stücke:
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3000+0.17 EUR
6000+ 0.16 EUR
9000+ 0.15 EUR
Mindestbestellmenge: 3000
VTVS19ASMF-M3-08 VTVS19ASMF-M3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 18.7VWM 31VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 558pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12.44A
Voltage - Reverse Standoff (Typ): 18.7V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 31V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 29975 Stücke:
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28+0.63 EUR
37+ 0.49 EUR
100+ 0.29 EUR
500+ 0.27 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 28
1N6267A-E3/73 1N6267A-E3/73 Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 5.8VWM 10.5VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 143A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1N6267A-E3/73 1N6267A-E3/73 Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 5.8VWM 10.5VC 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 143A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
BZG04-47-M3-18 BZG04-47-M3-18 Vishay General Semiconductor - Diodes Division bzg04-m-series.pdf Description: DIODE ZENER 56V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47 V
Produkt ist nicht verfügbar
BZG04-47-HM3-08 BZG04-47-HM3-08 Vishay General Semiconductor - Diodes Division bzg04-m-series.pdf Description: DIODE ZENER 56V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZG04-47-HM3-18 BZG04-47-HM3-18 Vishay General Semiconductor - Diodes Division bzg04-m-series.pdf Description: DIODE ZENER 56V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ZM4751A-GS18 ZM4751A-GS18 Vishay General Semiconductor - Diodes Division zm4728a.pdf Description: DIODE ZENER 30V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.13 EUR
Mindestbestellmenge: 5000
ZM4751A-GS18 ZM4751A-GS18 Vishay General Semiconductor - Diodes Division zm4728a.pdf Description: DIODE ZENER 30V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Qualification: AEC-Q101
auf Bestellung 8985 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
37+ 0.49 EUR
100+ 0.29 EUR
500+ 0.27 EUR
1000+ 0.18 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 28
1.5SMC12CAHE3_A/H 1.5SMC12CAHE3_A/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 10.2VWM 16.7VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 89.8A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5SMC12CAHE3_A/I 1.5SMC12CAHE3_A/I Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 10.2VWM 16.7VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 89.8A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5SMC12CAHM3_A/H 1.5SMC12CAHM3_A/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 10.2VWM 16.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 89.8A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5SMC12CAHM3_A/I 1.5SMC12CAHM3_A/I Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 10.2VWM 16.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 89.8A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5SMC12CAHM3/H 1.5SMC12CAHM3/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 10.2VWM 16.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 89.8A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5SMC12CAHM3/I 1.5SMC12CAHM3/I Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 10.2VWM 16.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 89.8A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27C20P-HE3-08 BZD27C20P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 20V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.23 EUR
6000+ 0.22 EUR
9000+ 0.2 EUR
Mindestbestellmenge: 3000
BZD27C20P-HE3-08 BZD27C20P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 20V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
Qualification: AEC-Q101
auf Bestellung 29805 Stücke:
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27+0.67 EUR
31+ 0.58 EUR
100+ 0.4 EUR
500+ 0.31 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 27
SM5S20CAHM3/I SM5S20CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 111A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
750+2.72 EUR
1500+ 2.33 EUR
2250+ 2.2 EUR
Mindestbestellmenge: 750
SM5S20CAHM3/I SM5S20CAHM3/I Vishay General Semiconductor - Diodes Division sm5s10cathrusm5s85ca.pdf Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 111A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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4+4.52 EUR
10+ 3.79 EUR
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Mindestbestellmenge: 4
SM8S20CAHM3/I SM8S20CAHM3/I Vishay General Semiconductor - Diodes Division sm8s10cathrusm8s85ca.pdf Description: 6600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 204A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM8S20CAHM3/I SM8S20CAHM3/I Vishay General Semiconductor - Diodes Division sm8s10cathrusm8s85ca.pdf Description: 6600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 204A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1434 Stücke:
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30BQ040 30BQ040 Vishay General Semiconductor - Diodes Division 30BQ040PBF.pdf description Description: DIODE SCHOTTKY 40V 3A DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
P600A-E3/73 P600A-E3/73 Vishay General Semiconductor - Diodes Division p600a.pdf Description: DIODE GEN PURP 50V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
P600A-E3/73 P600A-E3/73 Vishay General Semiconductor - Diodes Division p600a.pdf Description: DIODE GEN PURP 50V 6A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
1N4747A-T Vishay General Semiconductor - Diodes Division ds18007_R19.pdf Description: DIODE ZENER 20V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 750 Ohms
Supplier Device Package: DO-41
Grade: Automotive
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZG04-30-HM3-08 BZG04-30-HM3-08 Vishay General Semiconductor - Diodes Division bzg04-m-series.pdf Description: DIODE ZENER 36V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Qualification: AEC-Q101
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1500+0.35 EUR
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Mindestbestellmenge: 1500
BZG04-30-HM3-08 BZG04-30-HM3-08 Vishay General Semiconductor - Diodes Division bzg04-m-series.pdf Description: DIODE ZENER 36V 1.25W DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
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BZG04-30-M3-18 BZG04-30-M3-18 Vishay General Semiconductor - Diodes Division bzg04-m-series.pdf Description: DIODE ZENER 36V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Produkt ist nicht verfügbar
BZG04-30-HM3-18 BZG04-30-HM3-18 Vishay General Semiconductor - Diodes Division bzg04-m-series.pdf Description: DIODE ZENER 36V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VSSAF3M10HM3/H Vishay General Semiconductor - Diodes Division vssaf3m10.pdf Description: DIODE SCHOTTKY 100V 3A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 364pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 7000 Stücke:
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3500+0.2 EUR
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VSSAF3M10HM3/H Vishay General Semiconductor - Diodes Division vssaf3m10.pdf Description: DIODE SCHOTTKY 100V 3A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 364pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 8183 Stücke:
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VSSAF3M10-M3/I Vishay General Semiconductor - Diodes Division vssaf3m10.pdf Description: DIODE SCHOTTKY 100V 3A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 364pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Produkt ist nicht verfügbar
VSSAF3M10HM3/I Vishay General Semiconductor - Diodes Division vssaf3m10.pdf Description: DIODE SCHOTTKY 100V 3A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 364pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
T4F16AHM3/H T4F16AHM3/H Vishay General Semiconductor - Diodes Division t4f10a_t4f51a.pdf Description: LOW PROFILE OF 400W PAR TVS PROD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 17.8A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
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3000+0.14 EUR
6000+ 0.13 EUR
9000+ 0.12 EUR
Mindestbestellmenge: 3000
T4F16AHM3/H T4F16AHM3/H Vishay General Semiconductor - Diodes Division t4f10a_t4f51a.pdf Description: LOW PROFILE OF 400W PAR TVS PROD
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 17.8A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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28+0.63 EUR
40+ 0.44 EUR
100+ 0.22 EUR
500+ 0.2 EUR
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T4F16AHM3/I T4F16AHM3/I Vishay General Semiconductor - Diodes Division t4f10a_t4f51a.pdf Description: LOW PROFILE OF 400W PAR TVS PROD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 17.8A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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10000+0.12 EUR
Mindestbestellmenge: 10000
T4F16AHM3/I T4F16AHM3/I Vishay General Semiconductor - Diodes Division t4f10a_t4f51a.pdf Description: LOW PROFILE OF 400W PAR TVS PROD
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 17.8A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
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28+0.63 EUR
40+ 0.44 EUR
100+ 0.22 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
2000+ 0.14 EUR
5000+ 0.13 EUR
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GP15B-E3/54 GP15B-E3/54 Vishay General Semiconductor - Diodes Division gp15a.pdf Description: DIODE GEN PURP 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.5 µs
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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GP15B-E3/54 GP15B-E3/54 Vishay General Semiconductor - Diodes Division gp15a.pdf Description: DIODE GEN PURP 100V 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.5 µs
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 7957 Stücke:
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18+1.02 EUR
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VS-10BQ100HM3/5BT VS-10BQ100HM3/5BT Vishay General Semiconductor - Diodes Division vs-10bq100hm3.pdf Description: DIODE SCHOTTKY 100V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
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VS-10BQ100HM3/5BT VS-10BQ100HM3/5BT Vishay General Semiconductor - Diodes Division vs-10bq100hm3.pdf Description: DIODE SCHOTTKY 100V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 6313 Stücke:
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RS1PDHM3_A/I RS1PDHM3_A/I Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE GEN PURP 200V 1A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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RS1PDHM3_A/I RS1PDHM3_A/I Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE GEN PURP 200V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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RS1FD-M3/I RS1FD-M3/I Vishay General Semiconductor - Diodes Division rs1fdrs1fgrs1fjrs1fkrs1fm.pdf Description: DIODE GEN PURP 200V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
RS1FK-M3/I RS1FK-M3/I Vishay General Semiconductor - Diodes Division rs1fdrs1fgrs1fjrs1fkrs1fm.pdf Description: DIODE GEN PURP 800V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
RS1FG-M3/I RS1FG-M3/I Vishay General Semiconductor - Diodes Division rs1fdrs1fgrs1fjrs1fkrs1fm.pdf Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
RS1FJ-M3/I RS1FJ-M3/I Vishay General Semiconductor - Diodes Division rs1fdrs1fgrs1fjrs1fkrs1fm.pdf Description: DIODE GEN PURP 600V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
RS1FLD-M3/I RS1FLD-M3/I Vishay General Semiconductor - Diodes Division rs1fld_rs1flg_rs1flj_rs1flk_rs1flm.pdf Description: DIODE GEN PURP 200V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
SS2P6HM3/85A SS2P6HM3/85A Vishay General Semiconductor - Diodes Division ss2p5.pdf Description: DIODE SCHOTTKY 60V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.15 EUR
Mindestbestellmenge: 10000
SS2P6HM3/85A SS2P6HM3/85A Vishay General Semiconductor - Diodes Division ss2p5.pdf Description: DIODE SCHOTTKY 60V 2A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 27280 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
35+ 0.51 EUR
100+ 0.31 EUR
500+ 0.29 EUR
1000+ 0.19 EUR
2000+ 0.18 EUR
5000+ 0.17 EUR
Mindestbestellmenge: 28
VBT5202-M3/4W vt5202-m3.pdf
VBT5202-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
auf Bestellung 7998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.18 EUR
50+ 1.75 EUR
100+ 1.39 EUR
500+ 1.17 EUR
1000+ 0.96 EUR
2000+ 0.9 EUR
5000+ 0.86 EUR
Mindestbestellmenge: 9
TZX2V7C-TAP tzxserie.pdf
TZX2V7C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 500 mV
Qualification: AEC-Q101
auf Bestellung 7215 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
69+ 0.26 EUR
141+ 0.13 EUR
500+ 0.1 EUR
1000+ 0.073 EUR
2000+ 0.063 EUR
5000+ 0.058 EUR
Mindestbestellmenge: 46
TZX2V7C-TAP tzxserie.pdf
TZX2V7C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 500 mV
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.048 EUR
Mindestbestellmenge: 10000
TZX20C-TAP tzxserie.pdf
TZX20C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
Qualification: AEC-Q101
auf Bestellung 9064 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
48+0.37 EUR
70+ 0.25 EUR
143+ 0.12 EUR
500+ 0.1 EUR
1000+ 0.072 EUR
2000+ 0.062 EUR
5000+ 0.058 EUR
Mindestbestellmenge: 48
TZX20C-TAP tzxserie.pdf
TZX20C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.048 EUR
Mindestbestellmenge: 10000
GI752-E3/54 gi750.pdf
GI752-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 3187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.46 EUR
15+ 1.2 EUR
100+ 0.93 EUR
Mindestbestellmenge: 13
SE30NJ-M3/I se30nd_se30ng_se30nj.pdf
SE30NJ-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14000+0.18 EUR
Mindestbestellmenge: 14000
SE30NJ-M3/I se30nd_se30ng_se30nj.pdf
SE30NJ-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 14150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
30+ 0.61 EUR
100+ 0.36 EUR
500+ 0.34 EUR
1000+ 0.23 EUR
2000+ 0.21 EUR
5000+ 0.2 EUR
Mindestbestellmenge: 23
SE20NJ-M3/I se20nd_se20ng_se20nj.pdf
SE20NJ-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14000+0.2 EUR
Mindestbestellmenge: 14000
SE20NJ-M3/I se20nd_se20ng_se20nj.pdf
SE20NJ-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 14150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.84 EUR
27+ 0.66 EUR
100+ 0.39 EUR
500+ 0.37 EUR
1000+ 0.25 EUR
2000+ 0.23 EUR
5000+ 0.22 EUR
Mindestbestellmenge: 21
VTVS19ASMF-M3-08 vtvs3v3asmf.pdf
VTVS19ASMF-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.7VWM 31VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 558pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12.44A
Voltage - Reverse Standoff (Typ): 18.7V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 31V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.17 EUR
6000+ 0.16 EUR
9000+ 0.15 EUR
Mindestbestellmenge: 3000
VTVS19ASMF-M3-08 vtvs3v3asmf.pdf
VTVS19ASMF-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18.7VWM 31VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 558pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12.44A
Voltage - Reverse Standoff (Typ): 18.7V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 31V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 29975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.63 EUR
37+ 0.49 EUR
100+ 0.29 EUR
500+ 0.27 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 28
1N6267A-E3/73 15ke.pdf
1N6267A-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 143A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
1N6267A-E3/73 15ke.pdf
1N6267A-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5VC 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 143A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
BZG04-47-M3-18 bzg04-m-series.pdf
BZG04-47-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 56V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47 V
Produkt ist nicht verfügbar
BZG04-47-HM3-08 bzg04-m-series.pdf
BZG04-47-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 56V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZG04-47-HM3-18 bzg04-m-series.pdf
BZG04-47-HM3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 56V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ZM4751A-GS18 zm4728a.pdf
ZM4751A-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.13 EUR
Mindestbestellmenge: 5000
ZM4751A-GS18 zm4728a.pdf
ZM4751A-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
Qualification: AEC-Q101
auf Bestellung 8985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.63 EUR
37+ 0.49 EUR
100+ 0.29 EUR
500+ 0.27 EUR
1000+ 0.18 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 28
1.5SMC12CAHE3_A/H 15smc.pdf
1.5SMC12CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.2VWM 16.7VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 89.8A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5SMC12CAHE3_A/I 15smc.pdf
1.5SMC12CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.2VWM 16.7VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 89.8A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5SMC12CAHM3_A/H 15smc.pdf
1.5SMC12CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.2VWM 16.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 89.8A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5SMC12CAHM3_A/I 15smc.pdf
1.5SMC12CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.2VWM 16.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 89.8A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5SMC12CAHM3/H 15smc.pdf
1.5SMC12CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.2VWM 16.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 89.8A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1.5SMC12CAHM3/I 15smc.pdf
1.5SMC12CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.2VWM 16.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 89.8A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZD27C20P-HE3-08 bzd27series.pdf
BZD27C20P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.23 EUR
6000+ 0.22 EUR
9000+ 0.2 EUR
Mindestbestellmenge: 3000
BZD27C20P-HE3-08 bzd27series.pdf
BZD27C20P-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
Qualification: AEC-Q101
auf Bestellung 29805 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
31+ 0.58 EUR
100+ 0.4 EUR
500+ 0.31 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 27
SM5S20CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S20CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 111A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
750+2.72 EUR
1500+ 2.33 EUR
2250+ 2.2 EUR
Mindestbestellmenge: 750
SM5S20CAHM3/I sm5s10cathrusm5s85ca.pdf
SM5S20CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 3600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 111A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.52 EUR
10+ 3.79 EUR
100+ 3.06 EUR
Mindestbestellmenge: 4
SM8S20CAHM3/I sm8s10cathrusm8s85ca.pdf
SM8S20CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 6600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 204A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
750+3.22 EUR
Mindestbestellmenge: 750
SM8S20CAHM3/I sm8s10cathrusm8s85ca.pdf
SM8S20CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 6600 W BI-DIRECTIONAL TVS IS DO-
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 204A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1434 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.32 EUR
10+ 4.47 EUR
100+ 3.62 EUR
Mindestbestellmenge: 4
30BQ040 description 30BQ040PBF.pdf
30BQ040
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
P600A-E3/73 p600a.pdf
P600A-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
P600A-E3/73 p600a.pdf
P600A-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 6A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
1N4747A-T ds18007_R19.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 750 Ohms
Supplier Device Package: DO-41
Grade: Automotive
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZG04-30-HM3-08 bzg04-m-series.pdf
BZG04-30-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+0.35 EUR
3000+ 0.31 EUR
Mindestbestellmenge: 1500
BZG04-30-HM3-08 bzg04-m-series.pdf
BZG04-30-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 1.25W DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.92 EUR
23+ 0.78 EUR
100+ 0.55 EUR
500+ 0.43 EUR
Mindestbestellmenge: 20
BZG04-30-M3-18 bzg04-m-series.pdf
BZG04-30-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Produkt ist nicht verfügbar
BZG04-30-HM3-18 bzg04-m-series.pdf
BZG04-30-HM3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VSSAF3M10HM3/H vssaf3m10.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 364pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3500+0.2 EUR
Mindestbestellmenge: 3500
VSSAF3M10HM3/H vssaf3m10.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 364pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 8183 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
30+ 0.59 EUR
100+ 0.35 EUR
500+ 0.33 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 24
VSSAF3M10-M3/I vssaf3m10.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 364pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Produkt ist nicht verfügbar
VSSAF3M10HM3/I vssaf3m10.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 364pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
T4F16AHM3/H t4f10a_t4f51a.pdf
T4F16AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: LOW PROFILE OF 400W PAR TVS PROD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 17.8A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.14 EUR
6000+ 0.13 EUR
9000+ 0.12 EUR
Mindestbestellmenge: 3000
T4F16AHM3/H t4f10a_t4f51a.pdf
T4F16AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: LOW PROFILE OF 400W PAR TVS PROD
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 17.8A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.63 EUR
40+ 0.44 EUR
100+ 0.22 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 28
T4F16AHM3/I t4f10a_t4f51a.pdf
T4F16AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: LOW PROFILE OF 400W PAR TVS PROD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 17.8A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.12 EUR
Mindestbestellmenge: 10000
T4F16AHM3/I t4f10a_t4f51a.pdf
T4F16AHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: LOW PROFILE OF 400W PAR TVS PROD
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 17.8A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.63 EUR
40+ 0.44 EUR
100+ 0.22 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
2000+ 0.14 EUR
5000+ 0.13 EUR
Mindestbestellmenge: 28
GP15B-E3/54 gp15a.pdf
GP15B-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.5 µs
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.34 EUR
Mindestbestellmenge: 4000
GP15B-E3/54 gp15a.pdf
GP15B-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.5 µs
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 7957 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1.02 EUR
21+ 0.87 EUR
100+ 0.61 EUR
500+ 0.47 EUR
1000+ 0.39 EUR
2000+ 0.34 EUR
Mindestbestellmenge: 18
VS-10BQ100HM3/5BT vs-10bq100hm3.pdf
VS-10BQ100HM3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 6300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3200+0.21 EUR
Mindestbestellmenge: 3200
VS-10BQ100HM3/5BT vs-10bq100hm3.pdf
VS-10BQ100HM3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 6313 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
30+ 0.6 EUR
100+ 0.36 EUR
500+ 0.33 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 23
RS1PDHM3_A/I rs1pb.pdf
RS1PDHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
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RS1PDHM3_A/I rs1pb.pdf
RS1PDHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
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30+0.6 EUR
39+ 0.45 EUR
100+ 0.27 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
2000+ 0.16 EUR
5000+ 0.15 EUR
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RS1FD-M3/I rs1fdrs1fgrs1fjrs1fkrs1fm.pdf
RS1FD-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
RS1FK-M3/I rs1fdrs1fgrs1fjrs1fkrs1fm.pdf
RS1FK-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
RS1FG-M3/I rs1fdrs1fgrs1fjrs1fkrs1fm.pdf
RS1FG-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
RS1FJ-M3/I rs1fdrs1fgrs1fjrs1fkrs1fm.pdf
RS1FJ-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
RS1FLD-M3/I rs1fld_rs1flg_rs1flj_rs1flk_rs1flm.pdf
RS1FLD-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
SS2P6HM3/85A ss2p5.pdf
SS2P6HM3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.15 EUR
Mindestbestellmenge: 10000
SS2P6HM3/85A ss2p5.pdf
SS2P6HM3/85A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 27280 Stücke:
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28+0.65 EUR
35+ 0.51 EUR
100+ 0.31 EUR
500+ 0.29 EUR
1000+ 0.19 EUR
2000+ 0.18 EUR
5000+ 0.17 EUR
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