Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Alle Produkte des Herstellers VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (38449) > Seite 186 nach 641
Foto | Bezeichnung | Hersteller | Beschreibung |
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SMB10J30A-E3/52 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 30VWM 48.4VC DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 20.7A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No Part Status: Active |
auf Bestellung 2773 Stücke: Lieferzeit 10-14 Tag (e) |
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SMB10J5.0A-E3/52 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 9.2VC DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 108.7A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
auf Bestellung 7466 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBG12CA-E3/52 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 12VWM 19.9VC DO215AA Packaging: Cut Tape (CT) Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 30.2A Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: SMBG (DO-215AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 19.9V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBG15CA-E3/52 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 15VWM 24.4VC DO215AA Packaging: Cut Tape (CT) Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 24.6A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: SMBG (DO-215AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 24.4V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
auf Bestellung 2512 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBG24A-E3/52 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 24VWM 38.9VC DO215AA Packaging: Cut Tape (CT) Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 15.4A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: SMBG (DO-215AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBG5.0CA-E3/52 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 9.2VC DO215AA Packaging: Cut Tape (CT) Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 65.2A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SMBG (DO-215AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBG7.5A-E3/52 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.5VWM 12.9VC DO215AA Packaging: Cut Tape (CT) Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 46.5A Voltage - Reverse Standoff (Typ): 7.5V Supplier Device Package: SMBG (DO-215AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 8.33V Voltage - Clamping (Max) @ Ipp: 12.9V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
auf Bestellung 2800 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBJ188A-E3/52 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 188VWM 328VC DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2A Voltage - Reverse Standoff (Typ): 188V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 209V Voltage - Clamping (Max) @ Ipp: 328V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
auf Bestellung 5793 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBJ188CA-E3/52 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 188VWM 328VC DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2A Voltage - Reverse Standoff (Typ): 188V Supplier Device Package: DO-214AA (SMBJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 209V Voltage - Clamping (Max) @ Ipp: 328V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
auf Bestellung 3476 Stücke: Lieferzeit 10-14 Tag (e) |
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SMCG36A-E3/57T | Vishay General Semiconductor - Diodes Division | Description: TVS DIODE 36VWM 58.1VC DO215AB |
auf Bestellung 343 Stücke: Lieferzeit 10-14 Tag (e) |
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SMCG60A-E3/57T | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 60VWM 96VC DO215AB Packaging: Cut Tape (CT) Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 15.5A Voltage - Reverse Standoff (Typ): 60V Supplier Device Package: DO-214AB (SMCG) Unidirectional Channels: 1 Voltage - Breakdown (Min): 66.7V Voltage - Clamping (Max) @ Ipp: 96V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
auf Bestellung 543 Stücke: Lieferzeit 10-14 Tag (e) |
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SMCJ11CA-E3/57T | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 11VWM 18.2VC DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 82.4A Voltage - Reverse Standoff (Typ): 11V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 12.2V Voltage - Clamping (Max) @ Ipp: 18.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
auf Bestellung 1836 Stücke: Lieferzeit 10-14 Tag (e) |
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SMCJ78A-E3/9AT | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 78VWM 126VC DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11.9A Voltage - Reverse Standoff (Typ): 78V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 86.7V Voltage - Clamping (Max) @ Ipp: 126V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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SMCJ8.5A-E3/57T | Vishay General Semiconductor - Diodes Division | Description: TVS DIODE 8.5V 14.4V DO214AB |
auf Bestellung 2313 Stücke: Lieferzeit 10-14 Tag (e) |
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SMCJ8.5CA-E3/57T | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 8.5VWM 14.4VC DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 104.2A Voltage - Reverse Standoff (Typ): 8.5V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 9.44V Voltage - Clamping (Max) @ Ipp: 14.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
auf Bestellung 1736 Stücke: Lieferzeit 10-14 Tag (e) |
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UG4D-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 4A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 9853 Stücke: Lieferzeit 10-14 Tag (e) |
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UH4PDC-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 2A TO277A Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 2A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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VB10170C-E3/8W | Vishay General Semiconductor - Diodes Division | Description: DIODE ARRAY SCHOTTKY 170V TO236 |
Produkt ist nicht verfügbar |
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VB40170C-E3/8W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 170V TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 170 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A Current - Reverse Leakage @ Vr: 250 µA @ 170 V |
Produkt ist nicht verfügbar |
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VS-ETH1506-1-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 29 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-262-3 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
Produkt ist nicht verfügbar |
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VS-ETH3006-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 30A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V |
auf Bestellung 3558 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-ETL1506-1-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A TO262-3 Packaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 210 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-262-3 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
Produkt ist nicht verfügbar |
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VS-ETX1506FP-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 15A TO220-2FP Packaging: Bulk Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A Current - Reverse Leakage @ Vr: 36 µA @ 600 V |
auf Bestellung 337 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-ETU1506-1-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-262-3 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
Produkt ist nicht verfügbar |
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VS-ETL1506FP-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 15A TO220-2FP Packaging: Bulk Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 210 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
auf Bestellung 817 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-6EWH06FNTR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 27 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
auf Bestellung 5526 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-ETH3006FP-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 30A TO220-2FP Packaging: Bulk Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V |
auf Bestellung 1032 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-ETU3006-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 30A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V |
Produkt ist nicht verfügbar |
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VS-8S2TH06I-M | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 8A TO220AC Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 16 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
Produkt ist nicht verfügbar |
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VS-ETL1506-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A TO220AC Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 210 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
auf Bestellung 6704 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-ETH1506-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 29 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
Produkt ist nicht verfügbar |
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VS-ETX0806FP-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 8A TO220-2FP Packaging: Bulk Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 17 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V |
auf Bestellung 830 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-ETL0806FP-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 8A TO220-2FP Packaging: Bulk Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 8 A Current - Reverse Leakage @ Vr: 9 µA @ 600 V |
Produkt ist nicht verfügbar |
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VS-ETH0806FP-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 8A TO220-2FP Packaging: Bulk Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 21 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 8 A Current - Reverse Leakage @ Vr: 12 µA @ 600 V |
auf Bestellung 336 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-ETX0806-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 17 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V |
auf Bestellung 8172 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-ETL0806-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 8A TO220AC Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 8 A Current - Reverse Leakage @ Vr: 9 µA @ 600 V |
auf Bestellung 4484 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-ETH0806-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 8A TO220AC Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 21 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 8 A Current - Reverse Leakage @ Vr: 12 µA @ 600 V |
auf Bestellung 4553 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-ETU3006-1-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 30A TO262-3 Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-262-3 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 70 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V |
Produkt ist nicht verfügbar |
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VS-EPH3006-N3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 30A TO247AC Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V |
auf Bestellung 422 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-5EWH06FNTR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-ETH3006-1-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 30A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-262-3 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V |
Produkt ist nicht verfügbar |
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VS-ETU3006FP-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 30A TO220-2FP Packaging: Bulk Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V |
auf Bestellung 854 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-ETU1506FP-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 15A TO220-2FP Packaging: Bulk Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
auf Bestellung 71 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-ETH1506FP-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 15A TO220-2FP Packaging: Bulk Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 29 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
auf Bestellung 190 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-ETX1506-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A Current - Reverse Leakage @ Vr: 36 µA @ 600 V |
Produkt ist nicht verfügbar |
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VS-ETX1506-1-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A TO262-3 Packaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-262-3 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A Current - Reverse Leakage @ Vr: 36 µA @ 600 V |
Produkt ist nicht verfügbar |
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VS-ETH3006S-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 30A TO263AB Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V |
auf Bestellung 5056 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-15EWX06FNTR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-ETU3006S-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 30A TO263AB Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 70 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V |
auf Bestellung 4647 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-ETX1506S-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A TO263AB Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A Current - Reverse Leakage @ Vr: 36 µA @ 600 V |
Produkt ist nicht verfügbar |
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VS-ETL1506S-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A TO263AB Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 210 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
auf Bestellung 916 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-ETH1506S-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A TO263AB Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 29 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
auf Bestellung 3185 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-5EWH06FNTR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 18151 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-15EWH06FNTR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 36 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-15EWH06FNTR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 36 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
auf Bestellung 6184 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-15EWL06FNTR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 220 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 20473 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-15EWX06FNTR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
auf Bestellung 26988 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-8EWL06FNTR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 170 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 3423 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-8EWX06FNTR-M3 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 8A DPAK |
auf Bestellung 39 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-6EWH06FNTR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 27 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMB10J30A-E3/52 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 48.4VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.7A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 30VWM 48.4VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.7A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 2773 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.7 EUR |
29+ | 0.61 EUR |
100+ | 0.42 EUR |
SMB10J5.0A-E3/52 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 108.7A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 5VWM 9.2VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 108.7A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
auf Bestellung 7466 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.93 EUR |
22+ | 0.8 EUR |
100+ | 0.56 EUR |
SMBG12CA-E3/52 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 19.9VC DO215AA
Packaging: Cut Tape (CT)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30.2A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SMBG (DO-215AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 12VWM 19.9VC DO215AA
Packaging: Cut Tape (CT)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30.2A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SMBG (DO-215AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)SMBG15CA-E3/52 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 24.4VC DO215AA
Packaging: Cut Tape (CT)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24.6A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SMBG (DO-215AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 15VWM 24.4VC DO215AA
Packaging: Cut Tape (CT)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24.6A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SMBG (DO-215AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 2512 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.23 EUR |
17+ | 1.08 EUR |
100+ | 0.83 EUR |
SMBG24A-E3/52 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 38.9VC DO215AA
Packaging: Cut Tape (CT)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMBG (DO-215AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 24VWM 38.9VC DO215AA
Packaging: Cut Tape (CT)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMBG (DO-215AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)SMBG5.0CA-E3/52 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC DO215AA
Packaging: Cut Tape (CT)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMBG (DO-215AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 9.2VC DO215AA
Packaging: Cut Tape (CT)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 65.2A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMBG (DO-215AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.58 EUR |
14+ | 1.31 EUR |
100+ | 1.02 EUR |
SMBG7.5A-E3/52 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.5VWM 12.9VC DO215AA
Packaging: Cut Tape (CT)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: SMBG (DO-215AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 7.5VWM 12.9VC DO215AA
Packaging: Cut Tape (CT)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: SMBG (DO-215AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.04 EUR |
20+ | 0.88 EUR |
100+ | 0.66 EUR |
SMBJ188A-E3/52 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 188VWM 328VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 188V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 188VWM 328VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 188V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 5793 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.76 EUR |
33+ | 0.55 EUR |
100+ | 0.28 EUR |
SMBJ188CA-E3/52 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 188VWM 328VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 188V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 188VWM 328VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 188V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 3476 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
35+ | 0.51 EUR |
100+ | 0.31 EUR |
SMCG36A-E3/57T |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO215AB
Description: TVS DIODE 36VWM 58.1VC DO215AB
auf Bestellung 343 Stücke:
Lieferzeit 10-14 Tag (e)SMCG60A-E3/57T |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 60VWM 96VC DO215AB
Packaging: Cut Tape (CT)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 60VWM 96VC DO215AB
Packaging: Cut Tape (CT)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 543 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.8 EUR |
12+ | 1.47 EUR |
100+ | 1.15 EUR |
SMCJ11CA-E3/57T |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 11VWM 18.2VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82.4A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 11VWM 18.2VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82.4A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 1836 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.04 EUR |
21+ | 0.88 EUR |
100+ | 0.61 EUR |
SMCJ78A-E3/9AT |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 78VWM 126VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.9A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 78VWM 126VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.9A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
SMCJ8.5A-E3/57T |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.5V 14.4V DO214AB
Description: TVS DIODE 8.5V 14.4V DO214AB
auf Bestellung 2313 Stücke:
Lieferzeit 10-14 Tag (e)SMCJ8.5CA-E3/57T |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 104.2A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 104.2A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 1736 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1 EUR |
21+ | 0.86 EUR |
100+ | 0.6 EUR |
UG4D-E3/54 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 9853 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1 EUR |
21+ | 0.86 EUR |
100+ | 0.6 EUR |
500+ | 0.46 EUR |
UH4PDC-M3/86A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 2A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE ARRAY GP 200V 2A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
VB10170C-E3/8W |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 170V TO236
Description: DIODE ARRAY SCHOTTKY 170V TO236
Produkt ist nicht verfügbar
VB40170C-E3/8W |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 170V TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 170 V
Description: DIODE ARRAY SCHOTTKY 170V TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 170 V
Produkt ist nicht verfügbar
VS-ETH1506-1-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETH3006-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Description: DIODE GEN PURP 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 3558 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.19 EUR |
50+ | 1.69 EUR |
100+ | 1.54 EUR |
500+ | 1.26 EUR |
1000+ | 1.17 EUR |
2000+ | 1.11 EUR |
VS-ETL1506-1-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETX1506FP-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 15A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
Description: DIODE GP 600V 15A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
auf Bestellung 337 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.34 EUR |
50+ | 1.88 EUR |
100+ | 1.49 EUR |
VS-ETU1506-1-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETL1506FP-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 15A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE GP 600V 15A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 817 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.32 EUR |
10+ | 1.9 EUR |
100+ | 1.48 EUR |
500+ | 1.25 EUR |
VS-6EWH06FNTR-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GEN PURP 600V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 5526 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.41 EUR |
15+ | 1.22 EUR |
100+ | 0.85 EUR |
500+ | 0.71 EUR |
1000+ | 0.6 EUR |
VS-ETH3006FP-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 30A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Description: DIODE GP 600V 30A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 1032 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.19 EUR |
50+ | 1.69 EUR |
100+ | 1.54 EUR |
500+ | 1.26 EUR |
1000+ | 1.17 EUR |
VS-ETU3006-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Description: DIODE GEN PURP 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
VS-8S2TH06I-M |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETL1506-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 6704 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.5 EUR |
50+ | 1.31 EUR |
100+ | 1.19 EUR |
500+ | 0.96 EUR |
1000+ | 0.89 EUR |
2000+ | 0.83 EUR |
5000+ | 0.81 EUR |
VS-ETH1506-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETX0806FP-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 8A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Description: DIODE GP 600V 8A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 830 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.32 EUR |
50+ | 1.05 EUR |
100+ | 0.83 EUR |
500+ | 0.71 EUR |
VS-ETL0806FP-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 8A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 8 A
Current - Reverse Leakage @ Vr: 9 µA @ 600 V
Description: DIODE GP 600V 8A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 8 A
Current - Reverse Leakage @ Vr: 9 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETH0806FP-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 8A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 8 A
Current - Reverse Leakage @ Vr: 12 µA @ 600 V
Description: DIODE GP 600V 8A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 8 A
Current - Reverse Leakage @ Vr: 12 µA @ 600 V
auf Bestellung 336 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.87 EUR |
50+ | 1.5 EUR |
100+ | 1.19 EUR |
VS-ETX0806-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 8172 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.72 EUR |
50+ | 1.38 EUR |
100+ | 1.1 EUR |
500+ | 0.93 EUR |
1000+ | 0.76 EUR |
2000+ | 0.71 EUR |
5000+ | 0.68 EUR |
VS-ETL0806-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 8 A
Current - Reverse Leakage @ Vr: 9 µA @ 600 V
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 8 A
Current - Reverse Leakage @ Vr: 9 µA @ 600 V
auf Bestellung 4484 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.06 EUR |
50+ | 1.07 EUR |
100+ | 0.96 EUR |
500+ | 0.78 EUR |
1000+ | 0.72 EUR |
2000+ | 0.66 EUR |
VS-ETH0806-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 8 A
Current - Reverse Leakage @ Vr: 12 µA @ 600 V
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 8 A
Current - Reverse Leakage @ Vr: 12 µA @ 600 V
auf Bestellung 4553 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.71 EUR |
13+ | 1.4 EUR |
100+ | 1.09 EUR |
500+ | 0.92 EUR |
1000+ | 0.75 EUR |
2000+ | 0.71 EUR |
VS-ETU3006-1-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 70 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Description: DIODE GEN PURP 600V 30A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 70 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
VS-EPH3006-N3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Description: DIODE GP 600V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 422 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.44 EUR |
25+ | 5.1 EUR |
100+ | 4.37 EUR |
VS-5EWH06FNTR-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.49 EUR |
4000+ | 0.45 EUR |
6000+ | 0.43 EUR |
VS-ETH3006-1-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Description: DIODE GEN PURP 600V 30A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETU3006FP-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 30A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Description: DIODE GP 600V 30A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 854 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.27 EUR |
50+ | 1.74 EUR |
100+ | 1.58 EUR |
500+ | 1.29 EUR |
VS-ETU1506FP-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 15A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE GP 600V 15A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.32 EUR |
10+ | 1.9 EUR |
VS-ETH1506FP-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 15A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE GP 600V 15A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.59 EUR |
50+ | 1.37 EUR |
100+ | 1.24 EUR |
VS-ETX1506-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETX1506-1-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETH3006S-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 5056 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.68 EUR |
50+ | 1.43 EUR |
100+ | 1.3 EUR |
500+ | 1.19 EUR |
VS-15EWX06FNTR-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.82 EUR |
6000+ | 0.78 EUR |
10000+ | 0.74 EUR |
VS-ETU3006S-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 70 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 70 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 4647 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.45 EUR |
50+ | 1.84 EUR |
100+ | 1.67 EUR |
500+ | 1.38 EUR |
1000+ | 1.28 EUR |
2000+ | 1.23 EUR |
VS-ETX1506S-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETL1506S-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 916 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.5 EUR |
50+ | 2.02 EUR |
100+ | 1.6 EUR |
500+ | 1.35 EUR |
VS-ETH1506S-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 3185 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.68 EUR |
50+ | 1.41 EUR |
100+ | 1.28 EUR |
500+ | 1.04 EUR |
1000+ | 0.96 EUR |
2000+ | 0.9 EUR |
VS-5EWH06FNTR-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 18151 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.55 EUR |
17+ | 1.04 EUR |
100+ | 0.72 EUR |
500+ | 0.57 EUR |
1000+ | 0.53 EUR |
VS-15EWH06FNTR-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.84 EUR |
VS-15EWH06FNTR-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 6184 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.02 EUR |
11+ | 1.65 EUR |
100+ | 1.29 EUR |
500+ | 1.09 EUR |
1000+ | 0.89 EUR |
VS-15EWL06FNTR-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 20473 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.06 EUR |
11+ | 1.68 EUR |
100+ | 1.31 EUR |
500+ | 1.11 EUR |
1000+ | 0.9 EUR |
VS-15EWX06FNTR-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
auf Bestellung 26988 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 1.97 EUR |
11+ | 1.62 EUR |
100+ | 1.26 EUR |
500+ | 1.06 EUR |
1000+ | 0.87 EUR |
VS-8EWL06FNTR-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 3423 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.69 EUR |
13+ | 1.37 EUR |
100+ | 1.07 EUR |
500+ | 0.9 EUR |
1000+ | 0.74 EUR |
VS-8EWX06FNTR-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A DPAK
Description: DIODE GEN PURP 600V 8A DPAK
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.76 EUR |
12+ | 1.57 EUR |
VS-6EWH06FNTR-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GEN PURP 600V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.54 EUR |