VSSAF3M10-M3/I Vishay General Semiconductor - Diodes Division
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Description: DIODE SCHOTTKY 100V 3A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 364pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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Technische Details VSSAF3M10-M3/I Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3A DO221AC, Packaging: Tape & Reel (TR), Package / Case: DO-221AC, SMA Flat Leads, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 364pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-221AC (SlimSMA), Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A, Current - Reverse Leakage @ Vr: 200 µA @ 100 V.
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VSSAF3M10-M3/I | Hersteller : Vishay Semiconductors |
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