Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Alle Produkte des Herstellers VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (38063) > Seite 53 nach 635
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SS5P6-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 5A TO277A Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V |
auf Bestellung 80635 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
SS8P2L-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 20V 8A TO277A Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 330pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
auf Bestellung 76 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
SS8P3L-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 8A TO277A Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 330pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
auf Bestellung 3688 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
SS8PH10-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 8A TO277A Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 140pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
auf Bestellung 93878 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
V10P10-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 10A TO277A Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 100 V |
auf Bestellung 65635 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
V12P10-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 12A TO277A Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A Current - Reverse Leakage @ Vr: 250 µA @ 100 V |
auf Bestellung 15167 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
V8P10-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 8A TO277A Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A Current - Reverse Leakage @ Vr: 70 µA @ 100 V |
auf Bestellung 16241 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
V60120C-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 120V 30A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A Current - Reverse Leakage @ Vr: 500 µA @ 120 V |
auf Bestellung 828 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
5KP5.0A-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 9.2VC P600 Packaging: Tape & Reel (TR) Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 543A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: P600 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||
5KP15A-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 15VWM 24.4VC P600 Packaging: Tape & Reel (TR) Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 205A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: P600 Unidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 24.4V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
MSP3V3-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 3.3VWM 11.5VC MICROSMP Packaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 87A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: DO-219AD (MicroSMP) Unidirectional Channels: 1 Voltage - Breakdown (Min): 4.1V Voltage - Clamping (Max) @ Ipp: 11.5V Power - Peak Pulse: 150W Power Line Protection: No |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
MSP5.0A-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 9.2VC MICROSMP Packaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10.9A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: DO-219AD (MicroSMP) Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 100W Power Line Protection: No |
auf Bestellung 225000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
MSS1P2L-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 20V 1A MICROSMP Packaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 250 µA @ 20 V |
auf Bestellung 76500 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
MSS1P3-M3/89A | Vishay General Semiconductor - Diodes Division | Description: DIODE SCHOTTKY 30V 1A MICROSMP |
auf Bestellung 11650 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
MSS1P3L-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 1A MICROSMP Packaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 250 µA @ 30 V |
auf Bestellung 828000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
MSS1P4-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 1A MICROSMP Packaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
auf Bestellung 198000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
MSS1P5-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 50V 1A MICROSMP Packaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 50 V |
auf Bestellung 139500 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
MSS1P6-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 1A MICROSMP Packaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V |
auf Bestellung 80035 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
MSP3V3-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 3.3VWM 11.5VC MICROSMP Packaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 87A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: DO-219AD (MicroSMP) Unidirectional Channels: 1 Voltage - Breakdown (Min): 4.1V Voltage - Clamping (Max) @ Ipp: 11.5V Power - Peak Pulse: 150W Power Line Protection: No |
auf Bestellung 25841 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
MSP5.0A-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 9.2VC MICROSMP Packaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10.9A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: DO-219AD (MicroSMP) Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 100W Power Line Protection: No |
auf Bestellung 227889 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
MSS1P2L-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 20V 1A MICROSMP Packaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 250 µA @ 20 V |
auf Bestellung 81555 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
MSS1P3-M3/89A | Vishay General Semiconductor - Diodes Division | Description: DIODE SCHOTTKY 30V 1A MICROSMP |
auf Bestellung 12699 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
MSS1P3L-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 1A MICROSMP Packaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 250 µA @ 30 V |
auf Bestellung 828327 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
MSS1P4-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 1A MICROSMP Packaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
auf Bestellung 199303 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
MSS1P5-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 50V 1A MICROSMP Packaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 50 V |
auf Bestellung 143194 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
MSS1P6-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 1A MICROSMP Packaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V |
auf Bestellung 81645 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
VSKD91\08P | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 800V 100A ADD-A-PAK Packaging: Bulk Package / Case: ADD-A-PAK (3 + 4) Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 100A Supplier Device Package: ADD-A-PAK® Voltage - DC Reverse (Vr) (Max): 800 V Current - Reverse Leakage @ Vr: 10 mA @ 800 V |
Produkt ist nicht verfügbar |
||||||||||||||
GF1M-E3/67A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
SMA5J6.0A-E3/61 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 6VWM 10.3VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 48.5A Voltage - Reverse Standoff (Typ): 6V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.67V Voltage - Clamping (Max) @ Ipp: 10.3V Power - Peak Pulse: 500W Power Line Protection: No |
Produkt ist nicht verfügbar |
||||||||||||||
2KBP08M-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 2A KBPM Packaging: Tray Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 165°C (TJ) Technology: Standard Supplier Device Package: KBPM Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
||||||||||||||
2W005G-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 50V 2A WOG Packaging: Bulk Package / Case: 4-Circular, WOG Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: WOG Part Status: Active Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
auf Bestellung 5617 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
2W01G-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 100V 2A WOG Packaging: Bulk Package / Case: 4-Circular, WOG Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: WOG Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
auf Bestellung 4802 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
2W02G-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 2A WOG Packaging: Bulk Package / Case: 4-Circular, WOG Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: WOG Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 1358 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
2W08G-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 2A WOG Packaging: Bulk Package / Case: 4-Circular, WOG Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: WOG Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
auf Bestellung 1564 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
3KBP005M-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 50V 3A KBPM Packaging: Bulk Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPM Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
Produkt ist nicht verfügbar |
||||||||||||||
3KBP01M-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 100V 3A KBPM Packaging: Bulk Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPM Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
Produkt ist nicht verfügbar |
||||||||||||||
3KBP02M-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 3A KBPM Packaging: Bulk Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPM Part Status: Obsolete Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
||||||||||||||
3KBP04M-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 400V 3A KBPM Packaging: Tray Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPM Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
Produkt ist nicht verfügbar |
||||||||||||||
3KBP06M-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 3A KBPM Packaging: Tray Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPM Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
||||||||||||||
3KBP08M-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3A KBPM Packaging: Bulk Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPM Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
||||||||||||||
B250C1000G-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 400V 1A WOG Packaging: Bulk Package / Case: 4-Circular, WOG Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOG Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 2132 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
B250C800G-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 400V 900MA WOG Packaging: Bulk Package / Case: 4-Circular, WOG Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOG Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 900 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 2640 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
B40C800G-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 65V 900MA WOG Packaging: Bulk Package / Case: 4-Circular, WOG Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOG Part Status: Active Voltage - Peak Reverse (Max): 65 V Current - Average Rectified (Io): 900 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA Current - Reverse Leakage @ Vr: 10 µA @ 65 V |
auf Bestellung 1992 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
B80C1000G-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 125V 1A WOG Packaging: Bulk Package / Case: 4-Circular, WOG Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOG Voltage - Peak Reverse (Max): 125 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 125 V |
auf Bestellung 3614 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
B80C800G-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 125V 900MA WOG Packaging: Bulk Package / Case: 4-Circular, WOG Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOG Voltage - Peak Reverse (Max): 125 V Current - Average Rectified (Io): 900 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA Current - Reverse Leakage @ Vr: 10 µA @ 125 V |
auf Bestellung 1008 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
G2SB60-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL Packaging: Bulk Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
||||||||||||||
G2SB80-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 1.5A GBL Packaging: Bulk Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
Produkt ist nicht verfügbar |
||||||||||||||
G2SBA20-E3/51 | Vishay General Semiconductor - Diodes Division | Description: BRIDGE RECT 1PHASE 200V 1.5A GBL |
Produkt ist nicht verfügbar |
||||||||||||||
G2SBA60-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL Packaging: Bulk Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
||||||||||||||
G2SBA60L-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL Packaging: Bulk Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
||||||||||||||
G2SBA80-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 1.5A GBL Packaging: Bulk Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
||||||||||||||
G3SBA20-E3/51 | Vishay General Semiconductor - Diodes Division | Description: BRIDGE RECT 1PHASE 200V 2.3A GBU |
auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
G3SBA20L-E3/51 | Vishay General Semiconductor - Diodes Division | Description: BRIDGE RECT 1PHASE 200V 2.3A GBU |
Produkt ist nicht verfügbar |
||||||||||||||
G3SBA60-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU Packaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2.3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
||||||||||||||
G3SBA60L-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU Packaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2.3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
||||||||||||||
G3SBA80-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 2.3A GBU Packaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2.3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
||||||||||||||
G5SBA20-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU Packaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 2.8 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
||||||||||||||
G5SBA60-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU Packaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2.8 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
||||||||||||||
G5SBA80-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 2.8A GBU Packaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2.8 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
||||||||||||||
GBL01-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 100V 3A GBL Packaging: Bulk Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
auf Bestellung 947 Stücke: Lieferzeit 10-14 Tag (e) |
|
SS5P6-M3/86A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Description: DIODE SCHOTTKY 60V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
auf Bestellung 80635 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 0.99 EUR |
21+ | 0.85 EUR |
100+ | 0.59 EUR |
500+ | 0.46 EUR |
SS8P2L-M3/86A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE SCHOTTKY 20V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
auf Bestellung 76 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1.02 EUR |
20+ | 0.88 EUR |
SS8P3L-M3/86A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE SCHOTTKY 30V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
auf Bestellung 3688 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1.02 EUR |
20+ | 0.88 EUR |
100+ | 0.61 EUR |
500+ | 0.48 EUR |
SS8PH10-M3/86A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 93878 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.72 EUR |
29+ | 0.62 EUR |
100+ | 0.43 EUR |
500+ | 0.34 EUR |
V10P10-M3/86A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
auf Bestellung 65635 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.97 EUR |
23+ | 0.79 EUR |
100+ | 0.61 EUR |
500+ | 0.52 EUR |
V12P10-M3/86A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
auf Bestellung 15167 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.51 EUR |
15+ | 1.24 EUR |
100+ | 0.97 EUR |
500+ | 0.82 EUR |
V8P10-M3/86A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
auf Bestellung 16241 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.34 EUR |
16+ | 1.15 EUR |
100+ | 0.8 EUR |
500+ | 0.67 EUR |
V60120C-E3/4W |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Description: DIODE ARR SCHOT 120V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
auf Bestellung 828 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.51 EUR |
10+ | 3.74 EUR |
100+ | 2.98 EUR |
500+ | 2.52 EUR |
5KP5.0A-E3/54 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 543A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 5VWM 9.2VC P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 543A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
5KP15A-E3/54 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 24.4VC P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 205A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 15VWM 24.4VC P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 205A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
800+ | 1.32 EUR |
MSP3V3-M3/89A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 11.5VC MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 87A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.1V
Voltage - Clamping (Max) @ Ipp: 11.5V
Power - Peak Pulse: 150W
Power Line Protection: No
Description: TVS DIODE 3.3VWM 11.5VC MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 87A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.1V
Voltage - Clamping (Max) @ Ipp: 11.5V
Power - Peak Pulse: 150W
Power Line Protection: No
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4500+ | 0.094 EUR |
9000+ | 0.072 EUR |
MSP5.0A-M3/89A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 100W
Power Line Protection: No
Description: TVS DIODE 5VWM 9.2VC MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 100W
Power Line Protection: No
auf Bestellung 225000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4500+ | 0.072 EUR |
9000+ | 0.057 EUR |
MSS1P2L-M3/89A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Description: DIODE SCHOTTKY 20V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
auf Bestellung 76500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4500+ | 0.12 EUR |
9000+ | 0.099 EUR |
31500+ | 0.097 EUR |
MSS1P3-M3/89A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A MICROSMP
Description: DIODE SCHOTTKY 30V 1A MICROSMP
auf Bestellung 11650 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4500+ | 0.14 EUR |
9000+ | 0.12 EUR |
MSS1P3L-M3/89A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 250 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 250 µA @ 30 V
auf Bestellung 828000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4500+ | 0.057 EUR |
9000+ | 0.046 EUR |
MSS1P4-M3/89A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 198000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4500+ | 0.082 EUR |
9000+ | 0.063 EUR |
31500+ | 0.062 EUR |
112500+ | 0.048 EUR |
MSS1P5-M3/89A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
Description: DIODE SCHOTTKY 50V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
auf Bestellung 139500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4500+ | 0.079 EUR |
9000+ | 0.072 EUR |
MSS1P6-M3/89A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Description: DIODE SCHOTTKY 60V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
auf Bestellung 80035 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4500+ | 0.082 EUR |
9000+ | 0.063 EUR |
31500+ | 0.062 EUR |
MSP3V3-M3/89A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 11.5VC MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 87A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.1V
Voltage - Clamping (Max) @ Ipp: 11.5V
Power - Peak Pulse: 150W
Power Line Protection: No
Description: TVS DIODE 3.3VWM 11.5VC MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 87A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.1V
Voltage - Clamping (Max) @ Ipp: 11.5V
Power - Peak Pulse: 150W
Power Line Protection: No
auf Bestellung 25841 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
33+ | 0.55 EUR |
47+ | 0.38 EUR |
100+ | 0.19 EUR |
500+ | 0.16 EUR |
1000+ | 0.11 EUR |
2000+ | 0.094 EUR |
MSP5.0A-M3/89A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 100W
Power Line Protection: No
Description: TVS DIODE 5VWM 9.2VC MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 100W
Power Line Protection: No
auf Bestellung 227889 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
42+ | 0.42 EUR |
60+ | 0.29 EUR |
123+ | 0.14 EUR |
500+ | 0.12 EUR |
1000+ | 0.083 EUR |
2000+ | 0.072 EUR |
MSS1P2L-M3/89A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Description: DIODE SCHOTTKY 20V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
auf Bestellung 81555 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
38+ | 0.47 EUR |
100+ | 0.24 EUR |
500+ | 0.19 EUR |
1000+ | 0.14 EUR |
2000+ | 0.12 EUR |
MSS1P3-M3/89A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A MICROSMP
Description: DIODE SCHOTTKY 30V 1A MICROSMP
auf Bestellung 12699 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.74 EUR |
32+ | 0.55 EUR |
100+ | 0.31 EUR |
500+ | 0.21 EUR |
1000+ | 0.16 EUR |
2000+ | 0.14 EUR |
MSS1P3L-M3/89A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 250 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 250 µA @ 30 V
auf Bestellung 828327 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.35 EUR |
76+ | 0.23 EUR |
155+ | 0.11 EUR |
500+ | 0.095 EUR |
1000+ | 0.066 EUR |
2000+ | 0.057 EUR |
MSS1P4-M3/89A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 199303 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
36+ | 0.49 EUR |
53+ | 0.33 EUR |
109+ | 0.16 EUR |
500+ | 0.14 EUR |
1000+ | 0.094 EUR |
2000+ | 0.082 EUR |
MSS1P5-M3/89A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
Description: DIODE SCHOTTKY 50V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
auf Bestellung 143194 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 0.44 EUR |
58+ | 0.3 EUR |
114+ | 0.15 EUR |
500+ | 0.13 EUR |
1000+ | 0.093 EUR |
2000+ | 0.079 EUR |
MSS1P6-M3/89A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Description: DIODE SCHOTTKY 60V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
auf Bestellung 81645 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
36+ | 0.49 EUR |
53+ | 0.33 EUR |
109+ | 0.16 EUR |
500+ | 0.14 EUR |
1000+ | 0.094 EUR |
2000+ | 0.082 EUR |
VSKD91\08P |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 800V 100A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: ADD-A-PAK®
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
Description: DIODE GP 800V 100A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: ADD-A-PAK®
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
Produkt ist nicht verfügbar
GF1M-E3/67A |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.26 EUR |
SMA5J6.0A-E3/61 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6VWM 10.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 48.5A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 6VWM 10.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 48.5A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Produkt ist nicht verfügbar
2KBP08M-E4/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
2W005G-E4/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 2A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 2A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 5617 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 0.9 EUR |
23+ | 0.78 EUR |
100+ | 0.54 EUR |
500+ | 0.45 EUR |
1000+ | 0.42 EUR |
2W01G-E4/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 2A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 2A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 4802 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.27 EUR |
17+ | 1.09 EUR |
100+ | 0.76 EUR |
3000+ | 0.48 EUR |
2W02G-E4/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 2A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 1358 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.3 EUR |
16+ | 1.12 EUR |
100+ | 0.77 EUR |
500+ | 0.65 EUR |
1000+ | 0.55 EUR |
2W08G-E4/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 2A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1564 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.3 EUR |
16+ | 1.12 EUR |
100+ | 0.77 EUR |
500+ | 0.65 EUR |
1000+ | 0.55 EUR |
3KBP005M-E4/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
3KBP01M-E4/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
3KBP02M-E4/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
3KBP04M-E4/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 3A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 3A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
3KBP06M-E4/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 3A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
3KBP08M-E4/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
B250C1000G-E4/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 1A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 1A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 2132 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.32 EUR |
22+ | 0.81 EUR |
100+ | 0.53 EUR |
500+ | 0.41 EUR |
1000+ | 0.37 EUR |
2000+ | 0.34 EUR |
B250C800G-E4/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 900MA WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1P 400V 900MA WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 2640 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
32+ | 0.56 EUR |
100+ | 0.39 EUR |
500+ | 0.32 EUR |
1000+ | 0.3 EUR |
B40C800G-E4/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 65V 900MA WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Part Status: Active
Voltage - Peak Reverse (Max): 65 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
Current - Reverse Leakage @ Vr: 10 µA @ 65 V
Description: BRIDGE RECT 1PHASE 65V 900MA WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Part Status: Active
Voltage - Peak Reverse (Max): 65 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
Current - Reverse Leakage @ Vr: 10 µA @ 65 V
auf Bestellung 1992 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
31+ | 0.58 EUR |
100+ | 0.4 EUR |
500+ | 0.34 EUR |
1000+ | 0.31 EUR |
B80C1000G-E4/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 125V 1A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Voltage - Peak Reverse (Max): 125 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 125 V
Description: BRIDGE RECT 1PHASE 125V 1A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Voltage - Peak Reverse (Max): 125 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 125 V
auf Bestellung 3614 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.93 EUR |
22+ | 0.81 EUR |
100+ | 0.56 EUR |
500+ | 0.47 EUR |
1000+ | 0.4 EUR |
3000+ | 0.36 EUR |
B80C800G-E4/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 125V 900MA WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Voltage - Peak Reverse (Max): 125 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
Current - Reverse Leakage @ Vr: 10 µA @ 125 V
Description: BRIDGE RECT 1P 125V 900MA WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Voltage - Peak Reverse (Max): 125 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
Current - Reverse Leakage @ Vr: 10 µA @ 125 V
auf Bestellung 1008 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.95 EUR |
22+ | 0.81 EUR |
100+ | 0.56 EUR |
500+ | 0.47 EUR |
1000+ | 0.4 EUR |
G2SB60-E3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
G2SB80-E3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 1.5A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: BRIDGE RECT 1PHASE 800V 1.5A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
G2SBA20-E3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 1.5A GBL
Description: BRIDGE RECT 1PHASE 200V 1.5A GBL
Produkt ist nicht verfügbar
G2SBA60-E3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
G2SBA60L-E3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
G2SBA80-E3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 1.5A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 1.5A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
G3SBA20-E3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.92 EUR |
10+ | 2.61 EUR |
100+ | 2.04 EUR |
G3SBA20L-E3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Description: BRIDGE RECT 1PHASE 200V 2.3A GBU
Produkt ist nicht verfügbar
G3SBA60-E3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
G3SBA60L-E3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
G3SBA80-E3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2.3A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 2.3A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
G5SBA20-E3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 2.8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
G5SBA60-E3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2.8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
G5SBA80-E3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2.8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 2.8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2.8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
GBL01-E3/51 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 3A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 3A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 947 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.43 EUR |
10+ | 1.98 EUR |
100+ | 1.54 EUR |
500+ | 1.31 EUR |