Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Alle Produkte des Herstellers VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (38063) > Seite 323 nach 635
Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-70MT120KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.2KV 70A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Part Status: Active Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 70 A |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-70MT140KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.4KV 70A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Part Status: Active Voltage - Peak Reverse (Max): 1.4 kV Current - Average Rectified (Io): 70 A |
Produkt ist nicht verfügbar |
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VS-70MT160PAPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK Packaging: Tray Package / Case: MTK Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MTK Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 75 A |
auf Bestellung 55 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-70MT160PBPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK Packaging: Tube Package / Case: MTK Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MTK Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 75 A |
auf Bestellung 96 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-70MT80KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 800V 70A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 70 A |
Produkt ist nicht verfügbar |
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VS-90MT120KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.2KV 90A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Part Status: Active Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 90 A |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-90MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 90A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 90 A |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-91MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 90A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 90 A |
Produkt ist nicht verfügbar |
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VS-92MT120KPBF | Vishay General Semiconductor - Diodes Division | Description: BRIDGE RECT 3P 1.2KV 90A MT-K |
Produkt ist nicht verfügbar |
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VS-92MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 90A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 90 A |
Produkt ist nicht verfügbar |
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VS-93MT160KPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 90A MT-K Packaging: Tray Package / Case: MT-K Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MT-K Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 90 A |
Produkt ist nicht verfügbar |
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VS-HFA140FA60 | Vishay General Semiconductor - Diodes Division | Description: DIODE HEXFRED 70A 600V SOT-227 |
Produkt ist nicht verfügbar |
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VS-HFA140NJ60CPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 600V 167A TO244AB Packaging: Tray Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 33 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 167A Supplier Device Package: TO-244AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 140 A Current - Reverse Leakage @ Vr: 4 mA @ 480 V |
Produkt ist nicht verfügbar |
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VS-HFA200FA120P | Vishay General Semiconductor - Diodes Division |
Description: DIODE HEXFRED 100A 1200V SOT-227 Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 100 A Current - Reverse Leakage @ Vr: 75 µA @ 1200 V |
Produkt ist nicht verfügbar |
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VS-HFA280NJ60CPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 600V 280A TO244AB Packaging: Tray Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 39 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 280A Supplier Device Package: TO-244AB Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 210 A Current - Reverse Leakage @ Vr: 8 µA @ 600 V |
Produkt ist nicht verfügbar |
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VS-HFA60EA120P | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 1200V 30A SOT227 Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 30A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A Current - Reverse Leakage @ Vr: 75 µA @ 1200 V |
Produkt ist nicht verfügbar |
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VS-HFA60FA120P | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 1200V 30A SOT227 Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 123 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A Current - Reverse Leakage @ Vr: 75 µA @ 1200 V |
Produkt ist nicht verfügbar |
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VS-HFA70FA120 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 1200V 70A SOT227 Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 51 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 70A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 60 A Current - Reverse Leakage @ Vr: 75 µA @ 1200 V |
Produkt ist nicht verfügbar |
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VS-HFA80FA120P | Vishay General Semiconductor - Diodes Division |
Description: DIODE HEXFRED 40A 1200V SOT-227 Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 40A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 40 A Current - Reverse Leakage @ Vr: 2 µA @ 1200 V |
Produkt ist nicht verfügbar |
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VS-100BGQ015HF4 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 15V 100A POWERTAB Packaging: Tube Package / Case: PowerTab® Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3800pF @ 5V, 1MHz Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A Current - Reverse Leakage @ Vr: 18 mA @ 15 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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VS-100BGQ030HF4 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 100A POWERTAB Packaging: Tube Package / Case: PowerTab® Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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VS-100BGQ045HF4 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 100A POWERTAB Packaging: Tube Package / Case: PowerTab® Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2700pF @ 5V, 1MHz Current - Average Rectified (Io): 100A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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VS-10CTQ150-1PBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 150V 5A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-262-3 Operating Temperature - Junction: 175°C (Max) Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 150 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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VS-10CWH02FN-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 10A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 23 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A Current - Reverse Leakage @ Vr: 40 µA @ 200 V |
auf Bestellung 10674 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-10ETF02FP-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 200V 10A TO220-2FP Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
Produkt ist nicht verfügbar |
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VS-10ETF02-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
Produkt ist nicht verfügbar |
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VS-10ETF02SPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 10A TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
Produkt ist nicht verfügbar |
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VS-10ETF04FP-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 400V 10A TO220-2FP Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
Produkt ist nicht verfügbar |
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VS-10ETF06FP-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 10A TO220-2FP Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
Produkt ist nicht verfügbar |
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VS-10ETF06-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
Produkt ist nicht verfügbar |
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VS-10ETF10-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 310 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
auf Bestellung 6971 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-10ETF10SPBF | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 10A TO263AB |
Produkt ist nicht verfügbar |
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VS-10ETF12FP-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.2KV 10A TO220-2FP Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 310 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
auf Bestellung 1347 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-10ETF12SPBF | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1.2KV 10A TO263AB |
Produkt ist nicht verfügbar |
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VS-10ETS08SPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 10A TO263AB Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 800 V |
Produkt ist nicht verfügbar |
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VS-10RIA100M | Vishay General Semiconductor - Diodes Division | Description: SCR 1KV 10A TO208AA |
Produkt ist nicht verfügbar |
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VS-10RIA120M | Vishay General Semiconductor - Diodes Division | Description: SCR 1.2KV 10A TO208AA |
Produkt ist nicht verfügbar |
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VS-10RIA40M | Vishay General Semiconductor - Diodes Division |
Description: SCR 400V 10A TO208AA Packaging: Tube Package / Case: TO-208AA, TO-48-3, Stud Mounting Type: Chassis, Stud Mount SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 130 mA Current - Gate Trigger (Igt) (Max): 60 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A Current - On State (It (AV)) (Max): 25 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - On State (Vtm) (Max): 1.75 V Current - Off State (Max): 10 mA Supplier Device Package: TO-208AA (TO-48) Part Status: Active Current - On State (It (RMS)) (Max): 10 A Voltage - Off State: 400 V |
Produkt ist nicht verfügbar |
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VS-10RIA80M | Vishay General Semiconductor - Diodes Division | Description: SCR 800V 10A TO208AA |
Produkt ist nicht verfügbar |
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VS-10TQ035-N3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 35V 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 900pF @ 5V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A Current - Reverse Leakage @ Vr: 2 mA @ 40 V |
Produkt ist nicht verfügbar |
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VS-10TQ045-N3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A Current - Reverse Leakage @ Vr: 2 mA @ 45 V |
Produkt ist nicht verfügbar |
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VS-10WQ045FNHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 10A TO252 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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VS-112CNQ030ASLPBF | Vishay General Semiconductor - Diodes Division | Description: DIODE ARRAY SCHOTTKY 30V D618SL |
Produkt ist nicht verfügbar |
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VS-112CNQ030ASMPBF | Vishay General Semiconductor - Diodes Division | Description: DIODE ARRAY SCHOTTKY 30V D618SM |
Produkt ist nicht verfügbar |
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VS-12CWQ04FNHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 40V 6A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 12 A Current - Reverse Leakage @ Vr: 3 mA @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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VS-12CWQ06FN-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 60V 6A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 610 mV @ 6 A Current - Reverse Leakage @ Vr: 3 mA @ 60 V |
auf Bestellung 5431 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-12CWQ10FN-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTT 100V 6A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 12 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V |
auf Bestellung 3503 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-12EWH06FN-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 12A TO252 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 2697 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-12TTS08-M3 | Vishay General Semiconductor - Diodes Division |
Description: SCR 800V 12.5A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 30 mA Current - Gate Trigger (Igt) (Max): 15 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 95A @ 50Hz Current - On State (It (AV)) (Max): 8 A Voltage - Gate Trigger (Vgt) (Max): 1 V Voltage - On State (Vtm) (Max): 1.2 V Current - Off State (Max): 50 µA Supplier Device Package: TO-220-3 Part Status: Active Current - On State (It (RMS)) (Max): 12.5 A Voltage - Off State: 800 V |
auf Bestellung 678 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-12TTS08SPBF | Vishay General Semiconductor - Diodes Division |
Description: SCR 800V 12.5A TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 30 mA Current - Gate Trigger (Igt) (Max): 15 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 95A @ 50Hz Current - On State (It (AV)) (Max): 8 A Voltage - Gate Trigger (Vgt) (Max): 1 V Voltage - On State (Vtm) (Max): 1.2 V Current - Off State (Max): 50 µA Supplier Device Package: TO-263AB (D²PAK) Part Status: Discontinued at Digi-Key Current - On State (It (RMS)) (Max): 12.5 A Voltage - Off State: 800 V |
Produkt ist nicht verfügbar |
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VS-150EBU04HF4 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 400V 150A POWERTAB Packaging: Tube Package / Case: PowerTab® Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 150A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A Current - Reverse Leakage @ Vr: 50 µA @ 150 V Qualification: AEC-Q101 |
auf Bestellung 207 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-150U100DL | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1000V 150A DO-8 |
Produkt ist nicht verfügbar |
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VS-150U120DL | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1200V 150A DO-8 |
Produkt ist nicht verfügbar |
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VS-150U120DM12 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1200V 150A DO-8 |
Produkt ist nicht verfügbar |
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VS-150U80DL | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 800V 150A DO-8 |
Produkt ist nicht verfügbar |
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VS-150UR100DL | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1000V 150A DO-8 |
Produkt ist nicht verfügbar |
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VS-150UR120D | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP REV 1.2KV 150A DO205AA Packaging: Bulk Package / Case: DO-205AA, DO-8, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 150A Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 180°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 600 A |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-150UR120DM12 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1200V 150A DO-8 |
Produkt ist nicht verfügbar |
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VS-150UR60D | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 600V 150A DO-8 |
Produkt ist nicht verfügbar |
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VS-150UR80D | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 800V 150A DO-8 |
Produkt ist nicht verfügbar |
VS-70MT120KPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 70A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 70 A
Description: BRIDGE RECT 3P 1.2KV 70A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 70 A
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 118.62 EUR |
VS-70MT140KPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.4KV 70A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.4 kV
Current - Average Rectified (Io): 70 A
Description: BRIDGE RECT 3P 1.4KV 70A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.4 kV
Current - Average Rectified (Io): 70 A
Produkt ist nicht verfügbar
VS-70MT160PAPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK
Packaging: Tray
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK
Packaging: Tray
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 64.5 EUR |
15+ | 57.49 EUR |
30+ | 54.06 EUR |
VS-70MT160PBPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK
Packaging: Tube
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
Description: BRIDGE RECT 3PHASE 1.6KV 75A MTK
Packaging: Tube
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 63.69 EUR |
15+ | 56.75 EUR |
VS-70MT80KPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 800V 70A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 70 A
Description: BRIDGE RECT 3PHASE 800V 70A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 70 A
Produkt ist nicht verfügbar
VS-90MT120KPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 90 A
Description: BRIDGE RECT 3P 1.2KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 90 A
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 115.05 EUR |
VS-90MT160KPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 109.81 EUR |
15+ | 99.51 EUR |
VS-91MT160KPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Produkt ist nicht verfügbar
VS-92MT120KPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 90A MT-K
Description: BRIDGE RECT 3P 1.2KV 90A MT-K
Produkt ist nicht verfügbar
VS-92MT160KPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Produkt ist nicht verfügbar
VS-93MT160KPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Description: BRIDGE RECT 3P 1.6KV 90A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Produkt ist nicht verfügbar
VS-HFA140FA60 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE HEXFRED 70A 600V SOT-227
Description: DIODE HEXFRED 70A 600V SOT-227
Produkt ist nicht verfügbar
VS-HFA140NJ60CPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 600V 167A TO244AB
Packaging: Tray
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 167A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 140 A
Current - Reverse Leakage @ Vr: 4 mA @ 480 V
Description: DIODE MOD GP 600V 167A TO244AB
Packaging: Tray
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 167A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 140 A
Current - Reverse Leakage @ Vr: 4 mA @ 480 V
Produkt ist nicht verfügbar
VS-HFA200FA120P |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE HEXFRED 100A 1200V SOT-227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 100 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Description: DIODE HEXFRED 100A 1200V SOT-227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 100 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Produkt ist nicht verfügbar
VS-HFA280NJ60CPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 600V 280A TO244AB
Packaging: Tray
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 280A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 210 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
Description: DIODE MOD GP 600V 280A TO244AB
Packaging: Tray
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 280A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 210 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
Produkt ist nicht verfügbar
VS-HFA60EA120P |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Produkt ist nicht verfügbar
VS-HFA60FA120P |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 123 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Description: DIODE MODULE GP 1200V 30A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 123 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Produkt ist nicht verfügbar
VS-HFA70FA120 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 70A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 51 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 60 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Description: DIODE MODULE GP 1200V 70A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 51 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 60 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Produkt ist nicht verfügbar
VS-HFA80FA120P |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE HEXFRED 40A 1200V SOT-227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 40A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 40 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Description: DIODE HEXFRED 40A 1200V SOT-227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 40A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 40 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Produkt ist nicht verfügbar
VS-100BGQ015HF4 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A
Current - Reverse Leakage @ Vr: 18 mA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 15V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A
Current - Reverse Leakage @ Vr: 18 mA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-100BGQ030HF4 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A
Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A
Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-100BGQ045HF4 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 100A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-10CTQ150-1PBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 5A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 150V 5A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-10CWH02FN-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
Description: DIODE ARRAY GP 200V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
auf Bestellung 10674 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1.02 EUR |
75+ | 0.82 EUR |
150+ | 0.65 EUR |
525+ | 0.55 EUR |
VS-10ETF02FP-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GP 200V 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Produkt ist nicht verfügbar
VS-10ETF02-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GEN PURP 200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Produkt ist nicht verfügbar
VS-10ETF02SPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GEN PURP 200V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Produkt ist nicht verfügbar
VS-10ETF04FP-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GP 400V 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Produkt ist nicht verfügbar
VS-10ETF06FP-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GP 600V 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Produkt ist nicht verfügbar
VS-10ETF06-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
VS-10ETF10-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE GEN PURP 1KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
auf Bestellung 6971 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.29 EUR |
10+ | 3.86 EUR |
100+ | 3.11 EUR |
500+ | 2.55 EUR |
1000+ | 2.11 EUR |
2000+ | 2.1 EUR |
VS-10ETF10SPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO263AB
Description: DIODE GEN PURP 1KV 10A TO263AB
Produkt ist nicht verfügbar
VS-10ETF12FP-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE GP 1.2KV 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
auf Bestellung 1347 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.22 EUR |
50+ | 3.4 EUR |
100+ | 2.8 EUR |
500+ | 2.37 EUR |
1000+ | 2.01 EUR |
VS-10ETF12SPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Produkt ist nicht verfügbar
VS-10ETS08SPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Description: DIODE GEN PURP 800V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Produkt ist nicht verfügbar
VS-10RIA100M |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 1KV 10A TO208AA
Description: SCR 1KV 10A TO208AA
Produkt ist nicht verfügbar
VS-10RIA120M |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 10A TO208AA
Description: SCR 1.2KV 10A TO208AA
Produkt ist nicht verfügbar
VS-10RIA40M |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 400V 10A TO208AA
Packaging: Tube
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 130 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.75 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-208AA (TO-48)
Part Status: Active
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 400 V
Description: SCR 400V 10A TO208AA
Packaging: Tube
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 130 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 190A, 200A
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.75 V
Current - Off State (Max): 10 mA
Supplier Device Package: TO-208AA (TO-48)
Part Status: Active
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 400 V
Produkt ist nicht verfügbar
VS-10RIA80M |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 10A TO208AA
Description: SCR 800V 10A TO208AA
Produkt ist nicht verfügbar
VS-10TQ035-N3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Description: DIODE SCHOTTKY 35V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Produkt ist nicht verfügbar
VS-10TQ045-N3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Description: DIODE SCHOTTKY 45V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Produkt ist nicht verfügbar
VS-10WQ045FNHM3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 10A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-112CNQ030ASLPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 30V D618SL
Description: DIODE ARRAY SCHOTTKY 30V D618SL
Produkt ist nicht verfügbar
VS-112CNQ030ASMPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 30V D618SM
Description: DIODE ARRAY SCHOTTKY 30V D618SM
Produkt ist nicht verfügbar
VS-12CWQ04FNHM3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 40V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 12 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOTTKY 40V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 12 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-12CWQ06FN-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 60V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 6 A
Current - Reverse Leakage @ Vr: 3 mA @ 60 V
Description: DIODE ARRAY SCHOTTKY 60V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 6 A
Current - Reverse Leakage @ Vr: 3 mA @ 60 V
auf Bestellung 5431 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.41 EUR |
75+ | 1.13 EUR |
150+ | 0.89 EUR |
525+ | 0.76 EUR |
1050+ | 0.62 EUR |
2025+ | 0.58 EUR |
5025+ | 0.55 EUR |
VS-12CWQ10FN-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 100V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Description: DIODE ARRAY SCHOTT 100V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
auf Bestellung 3503 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.48 EUR |
75+ | 1.18 EUR |
150+ | 0.93 EUR |
525+ | 0.79 EUR |
1050+ | 0.64 EUR |
2025+ | 0.61 EUR |
VS-12EWH06FN-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 12A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 12A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 2697 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.83 EUR |
75+ | 1.47 EUR |
150+ | 1.16 EUR |
525+ | 0.99 EUR |
1050+ | 0.8 EUR |
2025+ | 0.76 EUR |
VS-12TTS08-M3 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 12.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 95A @ 50Hz
Current - On State (It (AV)) (Max): 8 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.2 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-220-3
Part Status: Active
Current - On State (It (RMS)) (Max): 12.5 A
Voltage - Off State: 800 V
Description: SCR 800V 12.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 95A @ 50Hz
Current - On State (It (AV)) (Max): 8 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.2 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-220-3
Part Status: Active
Current - On State (It (RMS)) (Max): 12.5 A
Voltage - Off State: 800 V
auf Bestellung 678 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.09 EUR |
50+ | 4.03 EUR |
100+ | 3.46 EUR |
500+ | 3.07 EUR |
VS-12TTS08SPBF |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 12.5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 95A @ 50Hz
Current - On State (It (AV)) (Max): 8 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.2 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-263AB (D²PAK)
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 12.5 A
Voltage - Off State: 800 V
Description: SCR 800V 12.5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 95A @ 50Hz
Current - On State (It (AV)) (Max): 8 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.2 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-263AB (D²PAK)
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 12.5 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
VS-150EBU04HF4 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 150A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE GP 400V 150A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 207 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 15.61 EUR |
25+ | 9.46 EUR |
100+ | 7.99 EUR |
VS-150U100DL |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1000V 150A DO-8
Description: DIODE GP 1000V 150A DO-8
Produkt ist nicht verfügbar
VS-150U120DL |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1200V 150A DO-8
Description: DIODE GP 1200V 150A DO-8
Produkt ist nicht verfügbar
VS-150U120DM12 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1200V 150A DO-8
Description: DIODE GP 1200V 150A DO-8
Produkt ist nicht verfügbar
VS-150U80DL |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 800V 150A DO-8
Description: DIODE GP 800V 150A DO-8
Produkt ist nicht verfügbar
VS-150UR100DL |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1000V 150A DO-8
Description: DIODE GP 1000V 150A DO-8
Produkt ist nicht verfügbar
VS-150UR120D |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 1.2KV 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 600 A
Description: DIODE GP REV 1.2KV 150A DO205AA
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 600 A
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 66.76 EUR |
VS-150UR120DM12 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1200V 150A DO-8
Description: DIODE GP 1200V 150A DO-8
Produkt ist nicht verfügbar
VS-150UR60D |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 150A DO-8
Description: DIODE GP 600V 150A DO-8
Produkt ist nicht verfügbar
VS-150UR80D |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 800V 150A DO-8
Description: DIODE GP 800V 150A DO-8
Produkt ist nicht verfügbar