Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13264) > Seite 23 nach 222
Foto | Bezeichnung | Hersteller | Beschreibung |
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2SK2865(TE16L1,NQ) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 600V 2A PW-MOLD |
Produkt ist nicht verfügbar |
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2SK2866(F) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 10A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 10 V |
Produkt ist nicht verfügbar |
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2SK2883(TE24L,Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 800V 3A TO220SM Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.5A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V |
Produkt ist nicht verfügbar |
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2SK2884(Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 800V 5A TO220FL |
Produkt ist nicht verfügbar |
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2SK2884(SM,Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 800V 5A TO220SM |
Produkt ist nicht verfügbar |
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2SK2884(TE24L,Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 800V 5A TO220SM |
Produkt ist nicht verfügbar |
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2SK2889(Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 600V 10A TO220FL |
Produkt ist nicht verfügbar |
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2SK2949(TE24L,Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 400V 10A TO220SM |
Produkt ist nicht verfügbar |
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2SK2991(Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 500V 5A TO220FL |
Produkt ist nicht verfügbar |
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2SK2991(SM,Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 500V 5A TO220SM |
Produkt ist nicht verfügbar |
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2SK2993(Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 250V 20A TO220FL |
Produkt ist nicht verfügbar |
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2SK3313(Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 500V 12A TO220NIS Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220NIS Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 10 V |
Produkt ist nicht verfügbar |
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2SK3342(TE16L1,NQ) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 250V 4.5A PW-MOLD Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: PW-MOLD Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V |
Produkt ist nicht verfügbar |
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2SK3387(TE24L,Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 150V 18A SC-97 |
Produkt ist nicht verfügbar |
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2SK3388(TE24L,Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 250V 20A 4TFP Packaging: Tape & Reel (TR) Package / Case: SC-97 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: 4-TFP (9.2x9.2) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 10 V |
Produkt ist nicht verfügbar |
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2SK3399(Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 600V 10A TO220FL |
Produkt ist nicht verfügbar |
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2SK3403(Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 450V 13A TO220FL Packaging: Bulk Package / Case: TO-220-3, Short Tab Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
Produkt ist nicht verfügbar |
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2SK3437(Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 600V 10A TO220FL |
Produkt ist nicht verfügbar |
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2SK3444(TE24L,Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 200V 25A SC-97 |
Produkt ist nicht verfügbar |
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2SK3462(TE16L1,NQ) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 250V 3A PW-MOLD Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 1.5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: PW-MOLD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 267 pF @ 10 V |
Produkt ist nicht verfügbar |
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2SK3466(TE24L,Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 500V 5A 4TFP Packaging: Tape & Reel (TR) Package / Case: SC-97 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 4-TFP (9.2x9.2) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V |
Produkt ist nicht verfügbar |
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2SK3662(F) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 35A TO220NIS Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 18A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-220NIS Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 10 V |
Produkt ist nicht verfügbar |
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2SK3667(Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 600V 7.5A TO220SIS |
Produkt ist nicht verfügbar |
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2SK3669(TE16L1,NQ) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 100V 10A PW-MOLD |
Produkt ist nicht verfügbar |
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2SK3700(F) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 900V 5A TO3P Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-3P(N) Part Status: Active Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V |
auf Bestellung 103 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK3798(Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 900V 4A TO220SIS |
Produkt ist nicht verfügbar |
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2SK3799(Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 900V 8A TO220SIS |
Produkt ist nicht verfügbar |
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2SK3842(TE24L,Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 75A SC-97 |
Produkt ist nicht verfügbar |
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2SK3844(Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 45A TO220NIS Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 23A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220NIS Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12400 pF @ 10 V |
Produkt ist nicht verfügbar |
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2SK3845(Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 70A TO-3PN |
Produkt ist nicht verfügbar |
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2SK3863(TE16L1,Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 500V 5A DP |
Produkt ist nicht verfügbar |
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2SK3868(Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 500V 5A TO220SIS Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V |
Produkt ist nicht verfügbar |
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2SK3879(TE24L,Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 800V 6.5A TO220SM |
Produkt ist nicht verfügbar |
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2SK3906(Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 20A TO3P Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-3P(N) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 25 V |
Produkt ist nicht verfügbar |
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2SK3907(Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 500V 23A TO-3PN |
Produkt ist nicht verfügbar |
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2SK3936(Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 500V 23A TO-3PN |
Produkt ist nicht verfügbar |
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2SK3940(Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 75V 70A TO-3PN |
Produkt ist nicht verfügbar |
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2SK4015(Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 600V 10A TO-220SIS |
Produkt ist nicht verfügbar |
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2SK4016(Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 13A TO220SIS Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V |
Produkt ist nicht verfügbar |
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2SK4017(Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 5A PW-MOLD2 Packaging: Bulk Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: PW-MOLD2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V |
Produkt ist nicht verfügbar |
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2SK4021(Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 250V 4.5A PW-MOLD2 Packaging: Bulk Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: PW-MOLD2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V |
Produkt ist nicht verfügbar |
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2SK4034(TE24L,Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 75A SC-97 |
Produkt ist nicht verfügbar |
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30FWJ2C48M(Q) | Toshiba Semiconductor and Storage | Description: DIODE ARRAY SCHOTTKY 30V TO220FL |
Produkt ist nicht verfügbar |
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30JL2C41(F) | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 600V 15A TO3P Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-3P(N) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
Produkt ist nicht verfügbar |
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CMZM16(TE12N,Q) | Toshiba Semiconductor and Storage | Description: DIODE ZENER 16V 1W MFLAT |
Produkt ist nicht verfügbar |
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CRF03(TE85L,Q,M) | Toshiba Semiconductor and Storage | Description: DIODE GEN PURP 600V 700MA SFLAT |
Produkt ist nicht verfügbar |
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CRY91(TE85L,Q,M) | Toshiba Semiconductor and Storage | Description: DIODE ZENER 9.1V 700MW SFLAT |
Produkt ist nicht verfügbar |
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GT10G131(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: IGBT 400V 1W 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 4V, 200A Supplier Device Package: 8-SOP (5.5x6.0) Td (on/off) @ 25°C: 3.1µs/2µs Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector Pulsed (Icm): 200 A Power - Max: 1 W |
Produkt ist nicht verfügbar |
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GT10J312(Q) | Toshiba Semiconductor and Storage |
Description: IGBT 600V 10A 60W TO220SM Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A Td (on/off) @ 25°C: 400ns/400ns Test Condition: 300V, 10A, 100Ohm, 15V Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 20 A Power - Max: 60 W |
Produkt ist nicht verfügbar |
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GT60N321(Q) | Toshiba Semiconductor and Storage |
Description: IGBT 1000V 60A 170W TO3P LH Packaging: Tube Package / Case: TO-3PL Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 2.5 µs Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A Supplier Device Package: TO-3P(LH) Td (on/off) @ 25°C: 330ns/700ns Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 120 A Power - Max: 170 W |
Produkt ist nicht verfügbar |
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GT30J121(Q) | Toshiba Semiconductor and Storage |
Description: IGBT 600V 30A 170W TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A Supplier Device Package: TO-3P(N) Td (on/off) @ 25°C: 90ns/300ns Switching Energy: 1mJ (on), 800µJ (off) Test Condition: 300V, 30A, 24Ohm, 15V Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 170 W |
auf Bestellung 137 Stücke: Lieferzeit 10-14 Tag (e) |
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GT30J324(Q) | Toshiba Semiconductor and Storage | Description: IGBT 600V 30A 170W TO3PN |
Produkt ist nicht verfügbar |
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GT50J121(Q) | Toshiba Semiconductor and Storage |
Description: IGBT 600V 50A 240W TO3P LH Packaging: Tube Package / Case: TO-3PL Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A Supplier Device Package: TO-3P(LH) Td (on/off) @ 25°C: 90ns/300ns Switching Energy: 1.3mJ (on), 1.34mJ (off) Test Condition: 300V, 50A, 13Ohm, 15V Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 240 W |
Produkt ist nicht verfügbar |
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GT60M303(Q) | Toshiba Semiconductor and Storage | Description: IGBT 900V 60A 170W TO3P LH |
Produkt ist nicht verfügbar |
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MP4020(F) | Toshiba Semiconductor and Storage | Description: TRANS 4NPN DARL 60V 2A 10SIP |
Produkt ist nicht verfügbar |
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MP4411(Q) | Toshiba Semiconductor and Storage | Description: MOSFET 4N-CH 100V 3A 12-SIP |
Produkt ist nicht verfügbar |
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TA48015BF(T6L1,NQ) | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 1.5V 1A PW-MOLD |
Produkt ist nicht verfügbar |
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TA48018BF(T6L1,NQ) | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 1.8V 1A PW-MOLD |
Produkt ist nicht verfügbar |
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TA48033BF(T6L1,NQ) | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 3.3V 1A PWMOLD |
Produkt ist nicht verfügbar |
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TA48LS00F(TE85L,F) | Toshiba Semiconductor and Storage | Description: IC REG LINEAR POS ADJ 300MA PS8 |
Produkt ist nicht verfügbar |
2SK2865(TE16L1,NQ) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 2A PW-MOLD
Description: MOSFET N-CH 600V 2A PW-MOLD
Produkt ist nicht verfügbar
2SK2866(F) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 10 V
Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 10 V
Produkt ist nicht verfügbar
2SK2883(TE24L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 3A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Description: MOSFET N-CH 800V 3A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
2SK2884(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 5A TO220FL
Description: MOSFET N-CH 800V 5A TO220FL
Produkt ist nicht verfügbar
2SK2884(SM,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 5A TO220SM
Description: MOSFET N-CH 800V 5A TO220SM
Produkt ist nicht verfügbar
2SK2884(TE24L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 5A TO220SM
Description: MOSFET N-CH 800V 5A TO220SM
Produkt ist nicht verfügbar
2SK2889(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 10A TO220FL
Description: MOSFET N-CH 600V 10A TO220FL
Produkt ist nicht verfügbar
2SK2949(TE24L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 400V 10A TO220SM
Description: MOSFET N-CH 400V 10A TO220SM
Produkt ist nicht verfügbar
2SK2991(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 5A TO220FL
Description: MOSFET N-CH 500V 5A TO220FL
Produkt ist nicht verfügbar
2SK2991(SM,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 5A TO220SM
Description: MOSFET N-CH 500V 5A TO220SM
Produkt ist nicht verfügbar
2SK2993(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 20A TO220FL
Description: MOSFET N-CH 250V 20A TO220FL
Produkt ist nicht verfügbar
2SK3313(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 12A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 10 V
Description: MOSFET N-CH 500V 12A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 10 V
Produkt ist nicht verfügbar
2SK3342(TE16L1,NQ) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 4.5A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PW-MOLD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
Description: MOSFET N-CH 250V 4.5A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PW-MOLD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
Produkt ist nicht verfügbar
2SK3387(TE24L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 150V 18A SC-97
Description: MOSFET N-CH 150V 18A SC-97
Produkt ist nicht verfügbar
2SK3388(TE24L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 20A 4TFP
Packaging: Tape & Reel (TR)
Package / Case: SC-97
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 4-TFP (9.2x9.2)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 10 V
Description: MOSFET N-CH 250V 20A 4TFP
Packaging: Tape & Reel (TR)
Package / Case: SC-97
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 4-TFP (9.2x9.2)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 10 V
Produkt ist nicht verfügbar
2SK3399(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 10A TO220FL
Description: MOSFET N-CH 600V 10A TO220FL
Produkt ist nicht verfügbar
2SK3403(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 13A TO220FL
Packaging: Bulk
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 450V 13A TO220FL
Packaging: Bulk
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
2SK3437(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 10A TO220FL
Description: MOSFET N-CH 600V 10A TO220FL
Produkt ist nicht verfügbar
2SK3444(TE24L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 25A SC-97
Description: MOSFET N-CH 200V 25A SC-97
Produkt ist nicht verfügbar
2SK3462(TE16L1,NQ) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 3A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 1.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PW-MOLD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 267 pF @ 10 V
Description: MOSFET N-CH 250V 3A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 1.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PW-MOLD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 267 pF @ 10 V
Produkt ist nicht verfügbar
2SK3466(TE24L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 5A 4TFP
Packaging: Tape & Reel (TR)
Package / Case: SC-97
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 4-TFP (9.2x9.2)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
Description: MOSFET N-CH 500V 5A 4TFP
Packaging: Tape & Reel (TR)
Package / Case: SC-97
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 4-TFP (9.2x9.2)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
Produkt ist nicht verfügbar
2SK3662(F) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 35A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 18A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 10 V
Description: MOSFET N-CH 60V 35A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 18A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 10 V
Produkt ist nicht verfügbar
2SK3667(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 7.5A TO220SIS
Description: MOSFET N-CH 600V 7.5A TO220SIS
Produkt ist nicht verfügbar
2SK3669(TE16L1,NQ) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 10A PW-MOLD
Description: MOSFET N-CH 100V 10A PW-MOLD
Produkt ist nicht verfügbar
2SK3700(F) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 5A TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Description: MOSFET N-CH 900V 5A TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
auf Bestellung 103 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.82 EUR |
10+ | 3.18 EUR |
25+ | 3.07 EUR |
100+ | 2.53 EUR |
2SK3798(Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 4A TO220SIS
Description: MOSFET N-CH 900V 4A TO220SIS
Produkt ist nicht verfügbar
2SK3799(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 8A TO220SIS
Description: MOSFET N-CH 900V 8A TO220SIS
Produkt ist nicht verfügbar
2SK3842(TE24L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 75A SC-97
Description: MOSFET N-CH 60V 75A SC-97
Produkt ist nicht verfügbar
2SK3844(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 45A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 23A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12400 pF @ 10 V
Description: MOSFET N-CH 60V 45A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 23A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12400 pF @ 10 V
Produkt ist nicht verfügbar
2SK3845(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 70A TO-3PN
Description: MOSFET N-CH 60V 70A TO-3PN
Produkt ist nicht verfügbar
2SK3863(TE16L1,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 5A DP
Description: MOSFET N-CH 500V 5A DP
Produkt ist nicht verfügbar
2SK3868(Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 5A TO220SIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Description: MOSFET N-CH 500V 5A TO220SIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Produkt ist nicht verfügbar
2SK3879(TE24L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 6.5A TO220SM
Description: MOSFET N-CH 800V 6.5A TO220SM
Produkt ist nicht verfügbar
2SK3906(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 25 V
Produkt ist nicht verfügbar
2SK3907(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 23A TO-3PN
Description: MOSFET N-CH 500V 23A TO-3PN
Produkt ist nicht verfügbar
2SK3936(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 23A TO-3PN
Description: MOSFET N-CH 500V 23A TO-3PN
Produkt ist nicht verfügbar
2SK3940(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 75V 70A TO-3PN
Description: MOSFET N-CH 75V 70A TO-3PN
Produkt ist nicht verfügbar
2SK4015(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 10A TO-220SIS
Description: MOSFET N-CH 600V 10A TO-220SIS
Produkt ist nicht verfügbar
2SK4016(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 13A TO220SIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Description: MOSFET N-CH 600V 13A TO220SIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Produkt ist nicht verfügbar
2SK4017(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 5A PW-MOLD2
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PW-MOLD2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V
Description: MOSFET N-CH 60V 5A PW-MOLD2
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PW-MOLD2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V
Produkt ist nicht verfügbar
2SK4021(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 4.5A PW-MOLD2
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PW-MOLD2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
Description: MOSFET N-CH 250V 4.5A PW-MOLD2
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PW-MOLD2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
Produkt ist nicht verfügbar
2SK4034(TE24L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 75A SC-97
Description: MOSFET N-CH 60V 75A SC-97
Produkt ist nicht verfügbar
30FWJ2C48M(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 30V TO220FL
Description: DIODE ARRAY SCHOTTKY 30V TO220FL
Produkt ist nicht verfügbar
30JL2C41(F) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 600V 15A TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-3P(N)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE ARRAY GP 600V 15A TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-3P(N)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
CMZM16(TE12N,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 16V 1W MFLAT
Description: DIODE ZENER 16V 1W MFLAT
Produkt ist nicht verfügbar
CRF03(TE85L,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 600V 700MA SFLAT
Description: DIODE GEN PURP 600V 700MA SFLAT
Produkt ist nicht verfügbar
CRY91(TE85L,Q,M) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 9.1V 700MW SFLAT
Description: DIODE ZENER 9.1V 700MW SFLAT
Produkt ist nicht verfügbar
GT10G131(TE12L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 400V 1W 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 4V, 200A
Supplier Device Package: 8-SOP (5.5x6.0)
Td (on/off) @ 25°C: 3.1µs/2µs
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 1 W
Description: IGBT 400V 1W 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 4V, 200A
Supplier Device Package: 8-SOP (5.5x6.0)
Td (on/off) @ 25°C: 3.1µs/2µs
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 1 W
Produkt ist nicht verfügbar
GT10J312(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 600V 10A 60W TO220SM
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Td (on/off) @ 25°C: 400ns/400ns
Test Condition: 300V, 10A, 100Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 60 W
Description: IGBT 600V 10A 60W TO220SM
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Td (on/off) @ 25°C: 400ns/400ns
Test Condition: 300V, 10A, 100Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 60 W
Produkt ist nicht verfügbar
GT60N321(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 1000V 60A 170W TO3P LH
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 2.5 µs
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
Supplier Device Package: TO-3P(LH)
Td (on/off) @ 25°C: 330ns/700ns
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 170 W
Description: IGBT 1000V 60A 170W TO3P LH
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 2.5 µs
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
Supplier Device Package: TO-3P(LH)
Td (on/off) @ 25°C: 330ns/700ns
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 170 W
Produkt ist nicht verfügbar
GT30J121(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 600V 30A 170W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
Supplier Device Package: TO-3P(N)
Td (on/off) @ 25°C: 90ns/300ns
Switching Energy: 1mJ (on), 800µJ (off)
Test Condition: 300V, 30A, 24Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 170 W
Description: IGBT 600V 30A 170W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
Supplier Device Package: TO-3P(N)
Td (on/off) @ 25°C: 90ns/300ns
Switching Energy: 1mJ (on), 800µJ (off)
Test Condition: 300V, 30A, 24Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 170 W
auf Bestellung 137 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.74 EUR |
10+ | 4.45 EUR |
25+ | 3.84 EUR |
80+ | 3.24 EUR |
GT30J324(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 600V 30A 170W TO3PN
Description: IGBT 600V 30A 170W TO3PN
Produkt ist nicht verfügbar
GT50J121(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 600V 50A 240W TO3P LH
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
Supplier Device Package: TO-3P(LH)
Td (on/off) @ 25°C: 90ns/300ns
Switching Energy: 1.3mJ (on), 1.34mJ (off)
Test Condition: 300V, 50A, 13Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 240 W
Description: IGBT 600V 50A 240W TO3P LH
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
Supplier Device Package: TO-3P(LH)
Td (on/off) @ 25°C: 90ns/300ns
Switching Energy: 1.3mJ (on), 1.34mJ (off)
Test Condition: 300V, 50A, 13Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 240 W
Produkt ist nicht verfügbar
GT60M303(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 900V 60A 170W TO3P LH
Description: IGBT 900V 60A 170W TO3P LH
Produkt ist nicht verfügbar
MP4020(F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 4NPN DARL 60V 2A 10SIP
Description: TRANS 4NPN DARL 60V 2A 10SIP
Produkt ist nicht verfügbar
MP4411(Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 4N-CH 100V 3A 12-SIP
Description: MOSFET 4N-CH 100V 3A 12-SIP
Produkt ist nicht verfügbar
TA48015BF(T6L1,NQ) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.5V 1A PW-MOLD
Description: IC REG LINEAR 1.5V 1A PW-MOLD
Produkt ist nicht verfügbar
TA48018BF(T6L1,NQ) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 1A PW-MOLD
Description: IC REG LINEAR 1.8V 1A PW-MOLD
Produkt ist nicht verfügbar
TA48033BF(T6L1,NQ) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 1A PWMOLD
Description: IC REG LINEAR 3.3V 1A PWMOLD
Produkt ist nicht verfügbar
TA48LS00F(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR POS ADJ 300MA PS8
Description: IC REG LINEAR POS ADJ 300MA PS8
Produkt ist nicht verfügbar