Produkte > TAIWAN SEMICONDUCTOR > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR (63597) > Seite 1046 nach 1060
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BAT54W RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Case: SOT323 Max. forward voltage: 1V Max. forward impulse current: 0.6A |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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BC549C B1G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Pulsed collector current: 0.2A Current gain: 420...800 Mounting: THT Kind of package: bulk |
auf Bestellung 197 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C13 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 13V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Zener current: 5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 355 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE6.8CA R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 6.8V; 150A; bidirectional; ±5%; DO201; 1.5kW Type of diode: TVS Max. off-state voltage: 10.5V Breakdown voltage: 6.8V Max. forward impulse current: 150A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 1mA Peak pulse power dissipation: 1.5kW |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR20100CT C0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.75V Max. load current: 20A Max. forward impulse current: 150A Kind of package: tube |
auf Bestellung 308 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM8N80CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 250W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.9A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 41nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TSM10N80CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.7A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Gate charge: 53nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TSM10N80CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.7A Power dissipation: 290W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Gate charge: 53nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SS16 M2G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 60V; 1A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.65V Max. forward impulse current: 40A Kind of package: reel; tape |
auf Bestellung 926 Stücke: Lieferzeit 14-21 Tag (e) |
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SS16L R2 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 60V; 1A; subSMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Case: subSMA Max. forward voltage: 0.7V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 550 Stücke: Lieferzeit 14-21 Tag (e) |
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SS16M RSG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 60V; 1A; microSMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Capacitance: 40pF Case: microSMA Max. forward voltage: 0.6V Max. forward impulse current: 25A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BZX55B10 A0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 10V; 5mA; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 285 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55B12 A0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 12V; 5mA; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 580 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55B15 A0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 15V; 5mA; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 1150 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55B18 A0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 18V; 5mA; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55B20 A0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 20V; 5mA; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 20V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
Produkt ist nicht verfügbar |
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BZX55B24 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 24V; 5mA; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55B27 A0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 27V; 5mA; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 27V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 495 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55B2V7 A0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 2.7V; 5mA; DO35; single diode; Ir: 10uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 10µA |
auf Bestellung 880 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55B3V0 A0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 3V; 5mA; DO35; single diode; Ir: 4uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 4µA |
Produkt ist nicht verfügbar |
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BZX55B3V3 A0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 3.3V; 5mA; DO35; single diode; Ir: 2uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 2µA |
auf Bestellung 1020 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55B3V6 A0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 3.6V; 5mA; DO35; single diode; Ir: 2uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 2µA |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55B3V9 A0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 3.9V; 5mA; DO35; single diode; Ir: 2uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 2µA |
Produkt ist nicht verfügbar |
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BZX55B4V3 A0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 4.3V; 5mA; DO35; single diode; Ir: 1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 1µA |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55B4V7 A0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 4.7V; 5mA; DO35; single diode; Ir: 500nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.5µA |
auf Bestellung 1235 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55B5V1 A0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 5.1V; 5mA; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 1200 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55B5V6 A0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 5.6V; 5mA; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 1210 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55B6V2 A0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 6.2V; 5mA; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C10 R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 10V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Zener current: 5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 1540 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C10 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 10V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Zener current: 5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 1310 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C11 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 11V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Zener current: 5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 475 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C12 R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 12V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Zener current: 5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 1044 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C12 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 12V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Zener current: 5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 1400 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C15 R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 15V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Zener current: 5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 640 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C15 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 15V; 5mA; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Zener current: 5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4007G R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 10pF Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1V |
auf Bestellung 599 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT3906 RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.35W Case: SOT23-3 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4148 A0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. load current: 0.45A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: Ammo Pack |
auf Bestellung 1840 Stücke: Lieferzeit 14-21 Tag (e) |
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TS78L09CS RLG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOP8; SMD; TS78L00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: 9V Output current: 0.1A Case: SOP8 Mounting: SMD Manufacturer series: TS78L00 Operating temperature: 0...150°C Tolerance: ±4% Number of channels: 1 Input voltage: 11.5...23V |
auf Bestellung 104 Stücke: Lieferzeit 14-21 Tag (e) |
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TS78L09CX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOT23; SMD; TS78L00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: 9V Output current: 0.1A Case: SOT23 Mounting: SMD Manufacturer series: TS78L00 Operating temperature: 0...150°C Tolerance: ±4% Number of channels: 1 Input voltage: 11.5...23V |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
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RS1G F3 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Max. off-state voltage: 0.4kV Max. forward impulse current: 30A Semiconductor structure: single diode Case: SMA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Capacitance: 10pF Max. forward voltage: 1.3V Load current: 1A Reverse recovery time: 150ns |
auf Bestellung 195 Stücke: Lieferzeit 14-21 Tag (e) |
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LL4148 L0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: MiniMELF glass Max. forward voltage: 1V Max. load current: 0.45A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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LL4148 L1G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: MiniMELF glass Max. forward voltage: 1V Max. load current: 0.45A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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1N4448 A0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. load current: 0.45A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: Ammo Pack |
auf Bestellung 685 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4448 A0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: reel; tape |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT2222A RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23-3 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
auf Bestellung 1506 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM2N7002KCX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 134mA; 71mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 134mA Power dissipation: 71mW Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 910pC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SK36A R2 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.72V Max. forward impulse current: 70A Kind of package: reel; tape |
auf Bestellung 2337 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE27A R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 27.1V; 42A; unidirectional; ±5%; DO201 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 37.5V Breakdown voltage: 27.1V Max. forward impulse current: 42A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 1µA |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE440A R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 440V; 2.5A; unidirectional; ±5%; DO201 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 602V Breakdown voltage: 440V Max. forward impulse current: 2.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 1µA |
Produkt ist nicht verfügbar |
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1.5KE440CA R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 440V; 2.5A; bidirectional; ±5%; DO201; 1.5kW Type of diode: TVS Max. off-state voltage: 602V Breakdown voltage: 440V Max. forward impulse current: 2.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW |
Produkt ist nicht verfügbar |
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1N5822 R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.525V Max. forward impulse current: 70A Capacitance: 200pF Kind of package: tape |
auf Bestellung 91 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C27 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 27V; 8mA; reel,tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 27V Zener current: 8mA Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
auf Bestellung 510 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE400A R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 400V; 2.8A; unidirectional; ±5%; DO201 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 548V Breakdown voltage: 400V Max. forward impulse current: 2.8A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 1µA |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE18CA R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 18V; 60A; bidirectional; ±5%; DO201; 1.5kW Type of diode: TVS Max. off-state voltage: 25.5V Breakdown voltage: 18V Max. forward impulse current: 60A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX55C3V6 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.6V; 5mA; reel,tape; DO35; single diode; Ir: 2uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Zener current: 5mA Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 2µA |
auf Bestellung 1663 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5817 R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.45V Max. forward impulse current: 30A Capacitance: 55pF |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5819 R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.6V Max. forward impulse current: 30A Capacitance: 55pF |
auf Bestellung 703 Stücke: Lieferzeit 14-21 Tag (e) |
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P6KE15CA R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; reel,tape Type of diode: TVS Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 28A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Kind of package: reel; tape |
auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) |
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P6KE30A R0 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 600W; 30V; 15A; unidirectional; ±5%; DO15; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.5V Breakdown voltage: 30V Max. forward impulse current: 15A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
BAT54W RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
750+ | 0.096 EUR |
985+ | 0.073 EUR |
BC549C B1G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Pulsed collector current: 0.2A
Current gain: 420...800
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Pulsed collector current: 0.2A
Current gain: 420...800
Mounting: THT
Kind of package: bulk
auf Bestellung 197 Stücke:
Lieferzeit 14-21 Tag (e)BZX55C13 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 355 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
355+ | 0.2 EUR |
1.5KE6.8CA R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 6.8V; 150A; bidirectional; ±5%; DO201; 1.5kW
Type of diode: TVS
Max. off-state voltage: 10.5V
Breakdown voltage: 6.8V
Max. forward impulse current: 150A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 6.8V; 150A; bidirectional; ±5%; DO201; 1.5kW
Type of diode: TVS
Max. off-state voltage: 10.5V
Breakdown voltage: 6.8V
Max. forward impulse current: 150A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 23.84 EUR |
MBR20100CT C0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
47+ | 1.53 EUR |
76+ | 0.95 EUR |
95+ | 0.76 EUR |
100+ | 0.72 EUR |
TSM8N80CZ C0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.9A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 41nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.9A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 41nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
TSM10N80CI C0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
TSM10N80CZ C0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 290W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 290W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 53nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
SS16 M2G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.65V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.65V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 926 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
280+ | 0.26 EUR |
660+ | 0.11 EUR |
735+ | 0.098 EUR |
SS16L R2 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; subSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: subSMA
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; subSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: subSMA
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 550 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
265+ | 0.27 EUR |
550+ | 0.13 EUR |
SS16M RSG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; microSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 40pF
Case: microSMA
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; microSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 40pF
Case: microSMA
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
Produkt ist nicht verfügbar
BZX55B10 A0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
285+ | 0.26 EUR |
BZX55B12 A0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 580 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
580+ | 0.12 EUR |
BZX55B15 A0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 1150 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1150+ | 0.061 EUR |
BZX55B18 A0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 18V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 18V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
400+ | 0.17 EUR |
BZX55B20 A0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Produkt ist nicht verfügbar
BZX55B24 A0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
250+ | 0.29 EUR |
BZX55B27 A0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 27V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 27V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 495 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
495+ | 0.14 EUR |
BZX55B2V7 A0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; DO35; single diode; Ir: 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 10µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; DO35; single diode; Ir: 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 10µA
auf Bestellung 880 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
880+ | 0.082 EUR |
BZX55B3V0 A0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; DO35; single diode; Ir: 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 4µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; DO35; single diode; Ir: 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 4µA
Produkt ist nicht verfügbar
BZX55B3V3 A0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; 5mA; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; 5mA; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
auf Bestellung 1020 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1020+ | 0.07 EUR |
BZX55B3V6 A0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
150+ | 0.47 EUR |
BZX55B3V9 A0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; 5mA; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; 5mA; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
Produkt ist nicht verfügbar
BZX55B4V3 A0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; DO35; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; DO35; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 2.04 EUR |
BZX55B4V7 A0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; DO35; single diode; Ir: 500nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; DO35; single diode; Ir: 500nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.5µA
auf Bestellung 1235 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1235+ | 0.057 EUR |
BZX55B5V1 A0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 1200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
358+ | 0.2 EUR |
459+ | 0.16 EUR |
892+ | 0.08 EUR |
997+ | 0.072 EUR |
1200+ | 0.06 EUR |
BZX55B5V6 A0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 1210 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1210+ | 0.059 EUR |
BZX55B6V2 A0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)BZX55C10 R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 1540 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.073 EUR |
1380+ | 0.052 EUR |
1540+ | 0.046 EUR |
BZX55C10 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 1310 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1140+ | 0.063 EUR |
1310+ | 0.054 EUR |
BZX55C11 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
475+ | 0.16 EUR |
BZX55C12 R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 1044 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
987+ | 0.073 EUR |
1044+ | 0.069 EUR |
BZX55C12 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 1400 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1140+ | 0.063 EUR |
1380+ | 0.052 EUR |
1400+ | 0.051 EUR |
BZX55C15 R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 640 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
640+ | 0.11 EUR |
BZX55C15 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
95+ | 0.76 EUR |
1N4007G R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
auf Bestellung 599 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
179+ | 0.4 EUR |
230+ | 0.31 EUR |
323+ | 0.22 EUR |
447+ | 0.16 EUR |
599+ | 0.12 EUR |
MMBT3906 RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23-3
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 1.79 EUR |
1N4148 A0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: Ammo Pack
auf Bestellung 1840 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
556+ | 0.13 EUR |
758+ | 0.094 EUR |
1425+ | 0.05 EUR |
1840+ | 0.039 EUR |
TS78L09CS RLG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOP8; SMD; TS78L00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 9V
Output current: 0.1A
Case: SOP8
Mounting: SMD
Manufacturer series: TS78L00
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 11.5...23V
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOP8; SMD; TS78L00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 9V
Output current: 0.1A
Case: SOP8
Mounting: SMD
Manufacturer series: TS78L00
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 11.5...23V
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
80+ | 0.9 EUR |
104+ | 0.69 EUR |
TS78L09CX RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOT23; SMD; TS78L00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 9V
Output current: 0.1A
Case: SOT23
Mounting: SMD
Manufacturer series: TS78L00
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 11.5...23V
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.1A; SOT23; SMD; TS78L00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 9V
Output current: 0.1A
Case: SOT23
Mounting: SMD
Manufacturer series: TS78L00
Operating temperature: 0...150°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 11.5...23V
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
55+ | 1.3 EUR |
RS1G F3 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Max. forward voltage: 1.3V
Load current: 1A
Reverse recovery time: 150ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Max. forward voltage: 1.3V
Load current: 1A
Reverse recovery time: 150ns
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
195+ | 0.37 EUR |
LL4148 L0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
Produkt ist nicht verfügbar
LL4148 L1G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
Produkt ist nicht verfügbar
1N4448 A0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: Ammo Pack
auf Bestellung 685 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
417+ | 0.17 EUR |
469+ | 0.15 EUR |
521+ | 0.14 EUR |
685+ | 0.1 EUR |
1N4448 A0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 2.04 EUR |
MMBT2222A RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 1506 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
278+ | 0.26 EUR |
435+ | 0.16 EUR |
497+ | 0.14 EUR |
723+ | 0.099 EUR |
1034+ | 0.069 EUR |
1506+ | 0.047 EUR |
TSM2N7002KCX RFG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 134mA; 71mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 134mA
Power dissipation: 71mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 910pC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 134mA; 71mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 134mA
Power dissipation: 71mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 910pC
Kind of channel: enhanced
Produkt ist nicht verfügbar
SK36A R2 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.72V
Max. forward impulse current: 70A
Kind of package: reel; tape
auf Bestellung 2337 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
80+ | 0.9 EUR |
141+ | 0.51 EUR |
205+ | 0.35 EUR |
304+ | 0.24 EUR |
439+ | 0.16 EUR |
463+ | 0.15 EUR |
1.5KE27A R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 27.1V; 42A; unidirectional; ±5%; DO201
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 37.5V
Breakdown voltage: 27.1V
Max. forward impulse current: 42A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 27.1V; 42A; unidirectional; ±5%; DO201
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 37.5V
Breakdown voltage: 27.1V
Max. forward impulse current: 42A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 10.21 EUR |
1.5KE440A R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 440V; 2.5A; unidirectional; ±5%; DO201
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 602V
Breakdown voltage: 440V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 440V; 2.5A; unidirectional; ±5%; DO201
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 602V
Breakdown voltage: 440V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Produkt ist nicht verfügbar
1.5KE440CA R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 440V; 2.5A; bidirectional; ±5%; DO201; 1.5kW
Type of diode: TVS
Max. off-state voltage: 602V
Breakdown voltage: 440V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 440V; 2.5A; bidirectional; ±5%; DO201; 1.5kW
Type of diode: TVS
Max. off-state voltage: 602V
Breakdown voltage: 440V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Produkt ist nicht verfügbar
1N5822 R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 70A
Capacitance: 200pF
Kind of package: tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 70A
Capacitance: 200pF
Kind of package: tape
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
91+ | 0.79 EUR |
BZX85C27 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 27V; 8mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 27V
Zener current: 8mA
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 27V; 8mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 27V
Zener current: 8mA
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
auf Bestellung 510 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
510+ | 0.14 EUR |
1.5KE400A R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 400V; 2.8A; unidirectional; ±5%; DO201
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 548V
Breakdown voltage: 400V
Max. forward impulse current: 2.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 400V; 2.8A; unidirectional; ±5%; DO201
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 548V
Breakdown voltage: 400V
Max. forward impulse current: 2.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 1.83 EUR |
91+ | 0.79 EUR |
114+ | 0.63 EUR |
131+ | 0.55 EUR |
139+ | 0.52 EUR |
1.5KE18CA R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 18V; 60A; bidirectional; ±5%; DO201; 1.5kW
Type of diode: TVS
Max. off-state voltage: 25.5V
Breakdown voltage: 18V
Max. forward impulse current: 60A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 18V; 60A; bidirectional; ±5%; DO201; 1.5kW
Type of diode: TVS
Max. off-state voltage: 25.5V
Breakdown voltage: 18V
Max. forward impulse current: 60A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 8.94 EUR |
BZX55C3V6 R0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; reel,tape; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 2µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; reel,tape; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Zener current: 5mA
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 2µA
auf Bestellung 1663 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
358+ | 0.2 EUR |
481+ | 0.15 EUR |
749+ | 0.096 EUR |
1013+ | 0.071 EUR |
1330+ | 0.054 EUR |
1493+ | 0.048 EUR |
1663+ | 0.043 EUR |
1N5817 R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 30A
Capacitance: 55pF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 30A
Capacitance: 55pF
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
658+ | 0.11 EUR |
734+ | 0.098 EUR |
951+ | 0.075 EUR |
1000+ | 0.072 EUR |
1N5819 R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.6V
Max. forward impulse current: 30A
Capacitance: 55pF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.6V
Max. forward impulse current: 30A
Capacitance: 55pF
auf Bestellung 703 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
703+ | 0.1 EUR |
P6KE15CA R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; reel,tape
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; reel,tape
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
57+ | 1.26 EUR |
P6KE30A R0 |
Hersteller: TAIWAN SEMICONDUCTOR
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 600W; 30V; 15A; unidirectional; ±5%; DO15; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.5V
Breakdown voltage: 30V
Max. forward impulse current: 15A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 600W; 30V; 15A; unidirectional; ±5%; DO15; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.5V
Breakdown voltage: 30V
Max. forward impulse current: 15A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar