Produkte > TAIWAN SEMICONDUCTOR > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR (63597) > Seite 1045 nach 1060
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SA48A R0G | Taiwan Semiconductor |
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SA48AHR0G | Taiwan Semiconductor |
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SA48A R0 | Taiwan Semiconductor |
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TSP15U100S S2 | Taiwan Semiconductor |
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TSP15U100S | Taiwan Semiconductor |
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TSPB15U100S | Taiwan Semiconductor |
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TSP15U100S | Taiwan Semiconductor |
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SMCJ17A | Taiwan Semiconductor |
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SMCJ17AHV6G | Taiwan Semiconductor |
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SMCJ17A R6 | Taiwan Semiconductor |
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SMCJ17A R6G | Taiwan Semiconductor |
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SMCJ17A V7G | Taiwan Semiconductor |
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SMCJ17A V6G | Taiwan Semiconductor |
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SMCJ17AHV7G | Taiwan Semiconductor |
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P6SMB82CA | Taiwan Semiconductor |
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1KSMB56CA M4G | Taiwan Semiconductor |
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1KSMB56CAHM4G | Taiwan Semiconductor |
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1KSMB56CA R5G | Taiwan Semiconductor |
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1KSMB56CAHR5G | Taiwan Semiconductor |
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P4KE30CA | Taiwan Semiconductor |
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Produkt ist nicht verfügbar |
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TLD8S24AH | Taiwan Semiconductor |
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Produkt ist nicht verfügbar |
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SMDJ24AHV6G | Taiwan Semiconductor |
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SMB10J24AHM4G | Taiwan Semiconductor |
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TLD6S24AH MAG | Taiwan Semiconductor |
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TLD5S24AH | Taiwan Semiconductor |
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Produkt ist nicht verfügbar |
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SMB10J24AH | Taiwan Semiconductor |
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auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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TLD6S24AH | Taiwan Semiconductor |
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SMB10J24AHR5G | Taiwan Semiconductor |
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1KSMB20A R4 | Taiwan Semiconductor |
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SMBJ20A M4 | Taiwan Semiconductor |
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FR203 R0G | Taiwan Semiconductor |
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TSG65N068CE RVG | Taiwan Semiconductor |
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1N5817 | Taiwan Semiconductor |
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Produkt ist nicht verfügbar |
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SMBJ18A M4 | Taiwan Semiconductor |
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Produkt ist nicht verfügbar |
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TSHA2101CQ-L3 M3G | Taiwan Semiconductor |
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SRA1060 | Taiwan Semiconductor |
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SRA1660 | Taiwan Semiconductor |
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Produkt ist nicht verfügbar |
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PGSMAJ30CA E3G | Taiwan Semiconductor |
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PGSMAJ30CAHE3G | Taiwan Semiconductor |
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PGSMAJ30CA E2G | Taiwan Semiconductor |
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PGSMAJ30CAHE2G | Taiwan Semiconductor |
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BZX79B5V1 R0G | Taiwan Semiconductor |
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BZX79B5V1 A0G | Taiwan Semiconductor |
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ES2D M4G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Capacitance: 25pF Case: SMB Max. forward voltage: 0.95V Max. forward impulse current: 50A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BC548B B1G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 500mW; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Pulsed collector current: 0.2A Current gain: 200...450 Mounting: THT Kind of package: bulk |
Produkt ist nicht verfügbar |
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BC548C B1G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Mounting: THT Case: TO92 Kind of package: bulk Collector current: 0.1A Pulsed collector current: 0.2A Type of transistor: NPN Power dissipation: 0.5W Polarisation: bipolar Collector-emitter voltage: 30V Current gain: 420...800 |
auf Bestellung 740 Stücke: Lieferzeit 14-21 Tag (e) |
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SS14 M2G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape |
auf Bestellung 1995 Stücke: Lieferzeit 14-21 Tag (e) |
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SS14L | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 40V; 1A; subSMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: subSMA Max. forward voltage: 0.55V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 4864 Stücke: Lieferzeit 14-21 Tag (e) |
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SS14L R2 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 40V; 1A; subSMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: subSMA Max. forward voltage: 0.55V Max. forward impulse current: 30A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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SS14M RS | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 40V; 1A; microSMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Capacitance: 50pF Case: microSMA Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: reel; tape |
auf Bestellung 125 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM850N06CX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 2.3A; 300mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.3A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: SMD Gate charge: 9.5nC Kind of channel: enhanced |
auf Bestellung 187 Stücke: Lieferzeit 14-21 Tag (e) |
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SS36 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: SMC Max. forward voltage: 0.75V Max. forward impulse current: 70A Kind of package: reel; tape |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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RMB6S RCG | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 30A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 0.8A Max. forward impulse current: 30A Case: MBS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE100CA R0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 100V; 11.4A; bidirectional; ±5%; DO201; 1.5kW Type of diode: TVS Max. off-state voltage: 137V Breakdown voltage: 100V Max. forward impulse current: 11.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW |
auf Bestellung 110 Stücke: Lieferzeit 14-21 Tag (e) |
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SS24M RS | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 40V; 2A; microSMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Case: microSMA Max. forward voltage: 0.6V Max. forward impulse current: 25A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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TSS54U RGG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 0603 Mounting: SMD Case: 0603 Max. off-state voltage: 30V Max. forward voltage: 1V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 0.3A Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
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TSM5NC50CF C0G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 2.2A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.2A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.38Ω Mounting: THT Gate charge: 15nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TSM60N600CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.8A Power dissipation: 83W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 13nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TSM60N600CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.8A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 13nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TSM60N600CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.8A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 13nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
SA48A R0G |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 48V 500W 2-Pin DO-15 T/R
TVS Diode Single Uni-Dir 48V 500W 2-Pin DO-15 T/R
Produkt ist nicht verfügbar
SA48AHR0G |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 48V 500W Automotive 2-Pin DO-15 T/R
TVS Diode Single Uni-Dir 48V 500W Automotive 2-Pin DO-15 T/R
Produkt ist nicht verfügbar
SA48A R0 |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 48V 500W 2-Pin DO-15 T/R
TVS Diode Single Uni-Dir 48V 500W 2-Pin DO-15 T/R
Produkt ist nicht verfügbar
TSP15U100S S2 |
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Hersteller: Taiwan Semiconductor
15A, 100V Low VF Trench Schottky Surface Mount Rectifier
15A, 100V Low VF Trench Schottky Surface Mount Rectifier
Produkt ist nicht verfügbar
TSP15U100S |
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Hersteller: Taiwan Semiconductor
Diode Schottky 100V 15A 3-Pin(2+Tab) SMPC T/R
Diode Schottky 100V 15A 3-Pin(2+Tab) SMPC T/R
Produkt ist nicht verfügbar
TSPB15U100S |
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Hersteller: Taiwan Semiconductor
Diode Schottky 100V 15A 3-Pin(2+Tab) SMPC-4.0 T/R
Diode Schottky 100V 15A 3-Pin(2+Tab) SMPC-4.0 T/R
Produkt ist nicht verfügbar
TSP15U100S |
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Hersteller: Taiwan Semiconductor
Diode Schottky 100V 15A 3-Pin(2+Tab) SMPC T/R
Diode Schottky 100V 15A 3-Pin(2+Tab) SMPC T/R
Produkt ist nicht verfügbar
SMCJ17A |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 17V 1.5KW 2-Pin SMC
TVS Diode Single Uni-Dir 17V 1.5KW 2-Pin SMC
Produkt ist nicht verfügbar
SMCJ17AHV6G |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 17V 1.5KW Automotive 2-Pin SMC T/R
TVS Diode Single Uni-Dir 17V 1.5KW Automotive 2-Pin SMC T/R
Produkt ist nicht verfügbar
SMCJ17A R6 |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 17V 1.5KW 2-Pin SMC T/R
TVS Diode Single Uni-Dir 17V 1.5KW 2-Pin SMC T/R
Produkt ist nicht verfügbar
SMCJ17A R6G |
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Hersteller: Taiwan Semiconductor
Diode TVS Single Uni-Dir 17V 1.5KW 2-Pin SMC
Diode TVS Single Uni-Dir 17V 1.5KW 2-Pin SMC
Produkt ist nicht verfügbar
SMCJ17A V7G |
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Hersteller: Taiwan Semiconductor
Diode TVS Single Uni-Dir 17V 1.5KW 2-Pin SMC
Diode TVS Single Uni-Dir 17V 1.5KW 2-Pin SMC
Produkt ist nicht verfügbar
SMCJ17A V6G |
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Hersteller: Taiwan Semiconductor
Diode TVS Single Uni-Dir 17V 1.5KW 2-Pin SMC T/R
Diode TVS Single Uni-Dir 17V 1.5KW 2-Pin SMC T/R
Produkt ist nicht verfügbar
SMCJ17AHV7G |
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Hersteller: Taiwan Semiconductor
Diode TVS Single Uni-Dir 17V 1.5KW Automotive 2-Pin SMC T/R
Diode TVS Single Uni-Dir 17V 1.5KW Automotive 2-Pin SMC T/R
Produkt ist nicht verfügbar
P6SMB82CA |
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Hersteller: Taiwan Semiconductor
Diode TVS Single Bi-Dir 70.1V 600W 2-Pin SMB T/R
Diode TVS Single Bi-Dir 70.1V 600W 2-Pin SMB T/R
Produkt ist nicht verfügbar
1KSMB56CA M4G |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Bi-Dir 47.8V 1KW 2-Pin SMB T/R
TVS Diode Single Bi-Dir 47.8V 1KW 2-Pin SMB T/R
Produkt ist nicht verfügbar
1KSMB56CAHM4G |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Bi-Dir 47.8V 1KW Automotive AEC-Q101 2-Pin SMB T/R
TVS Diode Single Bi-Dir 47.8V 1KW Automotive AEC-Q101 2-Pin SMB T/R
Produkt ist nicht verfügbar
1KSMB56CA R5G |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Bi-Dir 47.8V 1KW 2-Pin SMB T/R
TVS Diode Single Bi-Dir 47.8V 1KW 2-Pin SMB T/R
Produkt ist nicht verfügbar
1KSMB56CAHR5G |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Bi-Dir 47.8V 1KW Automotive 2-Pin SMB T/R
TVS Diode Single Bi-Dir 47.8V 1KW Automotive 2-Pin SMB T/R
Produkt ist nicht verfügbar
P4KE30CA |
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Hersteller: Taiwan Semiconductor
Diode TVS Single Bi-Dir 25.6V 400W 2-Pin DO-41 T/R
Diode TVS Single Bi-Dir 25.6V 400W 2-Pin DO-41 T/R
Produkt ist nicht verfügbar
TLD8S24AH |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 24V 6.6KW Automotive AEC-Q101 2-Pin(1+Tab) DO-218AB T/R
TVS Diode Single Uni-Dir 24V 6.6KW Automotive AEC-Q101 2-Pin(1+Tab) DO-218AB T/R
Produkt ist nicht verfügbar
SMDJ24AHV6G |
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Hersteller: Taiwan Semiconductor
Diode TVS Single Uni-Dir 24V 3KW Automotive 2-Pin SMC T/R
Diode TVS Single Uni-Dir 24V 3KW Automotive 2-Pin SMC T/R
Produkt ist nicht verfügbar
SMB10J24AHM4G |
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Hersteller: Taiwan Semiconductor
Diode TVS Single Uni-Dir 24V 1KW Automotive 2-Pin SMB T/R
Diode TVS Single Uni-Dir 24V 1KW Automotive 2-Pin SMB T/R
Produkt ist nicht verfügbar
TLD6S24AH MAG |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 24V 4.6KW Automotive 2-Pin(1+Tab) DO-218AB T/R
TVS Diode Single Uni-Dir 24V 4.6KW Automotive 2-Pin(1+Tab) DO-218AB T/R
Produkt ist nicht verfügbar
TLD5S24AH |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 24V 3.6KW Automotive 2-Pin(1+Tab) DO-218AB T/R
TVS Diode Single Uni-Dir 24V 3.6KW Automotive 2-Pin(1+Tab) DO-218AB T/R
Produkt ist nicht verfügbar
SMB10J24AH |
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Hersteller: Taiwan Semiconductor
Diode TVS Single Uni-Dir 24V 1KW Automotive 2-Pin SMB T/R
Diode TVS Single Uni-Dir 24V 1KW Automotive 2-Pin SMB T/R
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)TLD6S24AH |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 24V 4.6KW Automotive 2-Pin(1+Tab) DO-218AB T/R
TVS Diode Single Uni-Dir 24V 4.6KW Automotive 2-Pin(1+Tab) DO-218AB T/R
Produkt ist nicht verfügbar
SMB10J24AHR5G |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 24V 1KW Automotive 2-Pin SMB T/R
TVS Diode Single Uni-Dir 24V 1KW Automotive 2-Pin SMB T/R
Produkt ist nicht verfügbar
1KSMB20A R4 |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 17.1V 1KW 2-Pin SMB T/R
TVS Diode Single Uni-Dir 17.1V 1KW 2-Pin SMB T/R
Produkt ist nicht verfügbar
SMBJ20A M4 |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Uni-Dir 20V 600W 2-Pin SMB T/R
TVS Diode Single Uni-Dir 20V 600W 2-Pin SMB T/R
Produkt ist nicht verfügbar
FR203 R0G |
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Hersteller: Taiwan Semiconductor
Diode Switching 200V 2A 2-Pin DO-15 T/R
Diode Switching 200V 2A 2-Pin DO-15 T/R
Produkt ist nicht verfügbar
TSG65N068CE RVG |
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Hersteller: Taiwan Semiconductor
Trans JFET N-CH 650V 30A GaN
Trans JFET N-CH 650V 30A GaN
Produkt ist nicht verfügbar
1N5817 |
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Hersteller: Taiwan Semiconductor
Diode Schottky 20V 1A 2-Pin DO-41
Diode Schottky 20V 1A 2-Pin DO-41
Produkt ist nicht verfügbar
SMBJ18A M4 |
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Hersteller: Taiwan Semiconductor
Diode TVS Single Uni-Dir 18V 600W 2-Pin SMB
Diode TVS Single Uni-Dir 18V 600W 2-Pin SMB
Produkt ist nicht verfügbar
SRA1060 |
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Hersteller: Taiwan Semiconductor
Rectifier Diode Schottky 60V 10A 2-Pin(2+Tab) TO-220AC
Rectifier Diode Schottky 60V 10A 2-Pin(2+Tab) TO-220AC
Produkt ist nicht verfügbar
SRA1660 |
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Hersteller: Taiwan Semiconductor
Diode Schottky 60V 16A 2-Pin(2+Tab) TO-220AC Tube
Diode Schottky 60V 16A 2-Pin(2+Tab) TO-220AC Tube
Produkt ist nicht verfügbar
PGSMAJ30CA E3G |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Bi-Dir 30V 400W 2-Pin SMA T/R
TVS Diode Single Bi-Dir 30V 400W 2-Pin SMA T/R
Produkt ist nicht verfügbar
PGSMAJ30CAHE3G |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Bi-Dir 30V 400W Automotive 2-Pin SMA T/R
TVS Diode Single Bi-Dir 30V 400W Automotive 2-Pin SMA T/R
Produkt ist nicht verfügbar
PGSMAJ30CA E2G |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Bi-Dir 30V 400W 2-Pin SMA T/R
TVS Diode Single Bi-Dir 30V 400W 2-Pin SMA T/R
Produkt ist nicht verfügbar
PGSMAJ30CAHE2G |
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Hersteller: Taiwan Semiconductor
TVS Diode Single Bi-Dir 30V 400W Automotive AEC-Q101 2-Pin SMA T/R
TVS Diode Single Bi-Dir 30V 400W Automotive AEC-Q101 2-Pin SMA T/R
Produkt ist nicht verfügbar
BZX79B5V1 R0G |
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Hersteller: Taiwan Semiconductor
Zener Diode Single 5.1V 2% 60Ohm 500mW 2-Pin DO-35 T/R
Zener Diode Single 5.1V 2% 60Ohm 500mW 2-Pin DO-35 T/R
Produkt ist nicht verfügbar
BZX79B5V1 A0G |
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Hersteller: Taiwan Semiconductor
Zener Diode Single 5.1V 2% 60Ohm 500mW 2-Pin DO-35 Ammo
Zener Diode Single 5.1V 2% 60Ohm 500mW 2-Pin DO-35 Ammo
Produkt ist nicht verfügbar
ES2D M4G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Capacitance: 25pF
Case: SMB
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Capacitance: 25pF
Case: SMB
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
BC548B B1G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
BC548C B1G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92
Mounting: THT
Case: TO92
Kind of package: bulk
Collector current: 0.1A
Pulsed collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Collector-emitter voltage: 30V
Current gain: 420...800
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92
Mounting: THT
Case: TO92
Kind of package: bulk
Collector current: 0.1A
Pulsed collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Collector-emitter voltage: 30V
Current gain: 420...800
auf Bestellung 740 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
740+ | 0.097 EUR |
SS14 M2G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 1995 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
125+ | 0.57 EUR |
298+ | 0.24 EUR |
427+ | 0.17 EUR |
717+ | 0.1 EUR |
1031+ | 0.069 EUR |
1092+ | 0.065 EUR |
SS14L |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; subSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: subSMA
Max. forward voltage: 0.55V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; subSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: subSMA
Max. forward voltage: 0.55V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 4864 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
97+ | 0.74 EUR |
230+ | 0.31 EUR |
329+ | 0.22 EUR |
550+ | 0.13 EUR |
758+ | 0.094 EUR |
794+ | 0.09 EUR |
SS14L R2 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; subSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: subSMA
Max. forward voltage: 0.55V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; subSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: subSMA
Max. forward voltage: 0.55V
Max. forward impulse current: 30A
Kind of package: reel; tape
Produkt ist nicht verfügbar
SS14M RS |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; microSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 50pF
Case: microSMA
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; microSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 50pF
Case: microSMA
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
125+ | 0.57 EUR |
TSM850N06CX RFG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.3A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.3A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.3A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.3A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
auf Bestellung 187 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
76+ | 0.94 EUR |
116+ | 0.62 EUR |
166+ | 0.43 EUR |
187+ | 0.39 EUR |
SS36 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.75V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.75V
Max. forward impulse current: 70A
Kind of package: reel; tape
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
70+ | 1.02 EUR |
RMB6S RCG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
38+ | 1.89 EUR |
1.5KE100CA R0 |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 100V; 11.4A; bidirectional; ±5%; DO201; 1.5kW
Type of diode: TVS
Max. off-state voltage: 137V
Breakdown voltage: 100V
Max. forward impulse current: 11.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 100V; 11.4A; bidirectional; ±5%; DO201; 1.5kW
Type of diode: TVS
Max. off-state voltage: 137V
Breakdown voltage: 100V
Max. forward impulse current: 11.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
90+ | 0.8 EUR |
110+ | 0.64 EUR |
SS24M RS |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; microSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: microSMA
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; microSMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: microSMA
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
Produkt ist nicht verfügbar
TSS54U RGG |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 0603
Mounting: SMD
Case: 0603
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.3A
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 0603
Mounting: SMD
Case: 0603
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.3A
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
TSM5NC50CF C0G |
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Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.2A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.2A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.2A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.2A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
TSM60N600CH C5G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
TSM60N600CI C0G |
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
TSM60N600CP ROG |
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhanced
Produkt ist nicht verfügbar