Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (24030) > Seite 22 nach 401
Foto | Bezeichnung | Hersteller | Beschreibung |
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TSF30H200C C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTT 200V ITO220AB |
auf Bestellung 2286 Stücke: Lieferzeit 10-14 Tag (e) |
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TSF30H60C C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTT 60V ITO220AB |
Produkt ist nicht verfügbar |
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TSF30L120C C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTT 120V ITO220AB |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSF30L150C C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTT 150V ITO220AB |
auf Bestellung 581 Stücke: Lieferzeit 10-14 Tag (e) |
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TSF30L200C C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTT 200V ITO220AB |
auf Bestellung 970 Stücke: Lieferzeit 10-14 Tag (e) |
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TSF30L60C C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTT 60V ITO220AB |
Produkt ist nicht verfügbar |
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TSF30U100C C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTT 100V ITO220AB |
Produkt ist nicht verfügbar |
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TSF30U120C C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTT 120V ITO220AB |
Produkt ist nicht verfügbar |
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TSF30U45C C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTT 45V ITO220AB |
auf Bestellung 965 Stücke: Lieferzeit 10-14 Tag (e) |
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TSF30U60C C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTT 60V ITO220AB |
Produkt ist nicht verfügbar |
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TSF40H120C C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTT 120V ITO220AB |
auf Bestellung 980 Stücke: Lieferzeit 10-14 Tag (e) |
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TSF40H150C C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTT 150V ITO220AB |
auf Bestellung 962 Stücke: Lieferzeit 10-14 Tag (e) |
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TSF40L100C C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTT 100V ITO220AB |
auf Bestellung 1473 Stücke: Lieferzeit 10-14 Tag (e) |
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TSF40L200C C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTT 200V ITO220AB |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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TSH248CX RFG | Taiwan Semiconductor Corporation |
Description: MAGNETIC SWITCH TSOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Supplier Device Package: TSOT-23-3 Part Status: Active Output Type: Analog Voltage Polarization: North Pole, South Pole Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 3.5V Technology: Hall Effect Sensing Range: 6mT Trip, -6mT Release Current - Output (Max): 2mA Current - Supply (Max): 16µA Test Condition: 25°C |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSH248CX RFG | Taiwan Semiconductor Corporation |
Description: MAGNETIC SWITCH TSOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Supplier Device Package: TSOT-23-3 Part Status: Active Output Type: Analog Voltage Polarization: North Pole, South Pole Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 3.5V Technology: Hall Effect Sensing Range: 6mT Trip, -6mT Release Current - Output (Max): 2mA Current - Supply (Max): 16µA Test Condition: 25°C |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSI10H100CW C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTTKY 100V I2PAK |
Produkt ist nicht verfügbar |
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TSI10H120CW C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTTKY 120V I2PAK |
auf Bestellung 950 Stücke: Lieferzeit 10-14 Tag (e) |
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TSI10H150CW C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTTKY 150V I2PAK |
Produkt ist nicht verfügbar |
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TSI10H200CW C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTTKY 200V I2PAK |
Produkt ist nicht verfügbar |
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TSI10L200CW C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTTKY 200V I2PAK |
auf Bestellung 3980 Stücke: Lieferzeit 10-14 Tag (e) |
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TSI20H100CW C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTTKY 100V I2PAK |
auf Bestellung 985 Stücke: Lieferzeit 10-14 Tag (e) |
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TSI20H120CW C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTTKY 120V I2PAK |
auf Bestellung 985 Stücke: Lieferzeit 10-14 Tag (e) |
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TSI20H150CW C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTTKY 150V I2PAK |
auf Bestellung 993 Stücke: Lieferzeit 10-14 Tag (e) |
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TSI20H200CW C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTTKY 200V I2PAK |
auf Bestellung 760 Stücke: Lieferzeit 10-14 Tag (e) |
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TSI30H100CW C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTTKY 100V I2PAK |
Produkt ist nicht verfügbar |
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TSI30H120CW C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTTKY 120V I2PAK |
Produkt ist nicht verfügbar |
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TSI30H150CW C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTTKY 150V I2PAK |
auf Bestellung 940 Stücke: Lieferzeit 10-14 Tag (e) |
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TSI30H200CW C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTTKY 200V I2PAK |
auf Bestellung 970 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM015NA03CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 205A 8PDFN |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM015NA03CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 205A 8PDFN |
auf Bestellung 4988 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM018NA03CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 185A 8PDFN |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM018NA03CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 185A 8PDFN |
auf Bestellung 4815 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM020N04LCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 170A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 27A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7942 pF @ 20 V |
Produkt ist nicht verfügbar |
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TSM020N04LCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 170A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 27A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7942 pF @ 20 V |
Produkt ist nicht verfügbar |
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TSM024NA04LCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 170A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4224 pF @ 20 V |
Produkt ist nicht verfügbar |
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TSM024NA04LCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 170A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4224 pF @ 20 V |
auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM026NA03CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 168A 8PDFN |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM026NA03CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 168A 8PDFN |
auf Bestellung 4850 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM033NA03CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 129A 8PDFN |
Produkt ist nicht verfügbar |
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TSM033NA03CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 129A 8PDFN |
auf Bestellung 2340 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM033NA04LCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 141A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 141A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 20 V |
Produkt ist nicht verfügbar |
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TSM033NA04LCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 141A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 141A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 20 V |
auf Bestellung 45 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM036N03PQ56 RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 30V 124A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 22A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 15 V |
Produkt ist nicht verfügbar |
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TSM036N03PQ56 RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 30V 124A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 22A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 15 V |
auf Bestellung 398 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM040N03CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 30V 90A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM040N03CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 30V 90A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM042N03CS RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 30V 30A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V Power Dissipation (Max): 7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM042N03CS RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 30V 30A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V Power Dissipation (Max): 7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
auf Bestellung 14177 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM045NA03CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 30V 108A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1194 pF @ 15 V |
Produkt ist nicht verfügbar |
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TSM045NA03CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 30V 108A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1194 pF @ 15 V |
auf Bestellung 82 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM052N06PQ56 RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 60V 100A 8PDFN |
Produkt ist nicht verfügbar |
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TSM052N06PQ56 RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 60V 100A 8PDFN |
Produkt ist nicht verfügbar |
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TSM055N03EPQ56 RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 30V 80A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V |
Produkt ist nicht verfügbar |
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TSM055N03EPQ56 RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 30V 80A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V |
auf Bestellung 90 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM055N03PQ56 RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 30V 80A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V |
Produkt ist nicht verfügbar |
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TSM055N03PQ56 RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 30V 80A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V |
auf Bestellung 110 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM05N03CW RPG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 30V 5A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM05N03CW RPG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 30V 5A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V |
auf Bestellung 22115 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM060N03CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 30V 70A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSF30H200C C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 200V ITO220AB
Description: DIODE ARRAY SCHOTT 200V ITO220AB
auf Bestellung 2286 Stücke:
Lieferzeit 10-14 Tag (e)TSF30H60C C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Produkt ist nicht verfügbar
TSF30L120C C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 120V ITO220AB
Description: DIODE ARRAY SCHOTT 120V ITO220AB
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)TSF30L150C C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
Description: DIODE ARRAY SCHOTT 150V ITO220AB
auf Bestellung 581 Stücke:
Lieferzeit 10-14 Tag (e)TSF30L200C C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 200V ITO220AB
Description: DIODE ARRAY SCHOTT 200V ITO220AB
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.57 EUR |
10+ | 3.22 EUR |
100+ | 2.58 EUR |
500+ | 2.12 EUR |
TSF30L60C C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Produkt ist nicht verfügbar
TSF30U100C C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Produkt ist nicht verfügbar
TSF30U120C C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 120V ITO220AB
Description: DIODE ARRAY SCHOTT 120V ITO220AB
Produkt ist nicht verfügbar
TSF30U45C C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 45V ITO220AB
Description: DIODE ARRAY SCHOTT 45V ITO220AB
auf Bestellung 965 Stücke:
Lieferzeit 10-14 Tag (e)TSF30U60C C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Produkt ist nicht verfügbar
TSF40H120C C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 120V ITO220AB
Description: DIODE ARRAY SCHOTT 120V ITO220AB
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)TSF40H150C C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
Description: DIODE ARRAY SCHOTT 150V ITO220AB
auf Bestellung 962 Stücke:
Lieferzeit 10-14 Tag (e)TSF40L100C C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Description: DIODE ARRAY SCHOTT 100V ITO220AB
auf Bestellung 1473 Stücke:
Lieferzeit 10-14 Tag (e)TSF40L200C C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 200V ITO220AB
Description: DIODE ARRAY SCHOTT 200V ITO220AB
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.12 EUR |
10+ | 3.7 EUR |
TSH248CX RFG |
Hersteller: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH TSOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: TSOT-23-3
Part Status: Active
Output Type: Analog Voltage
Polarization: North Pole, South Pole
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.5V
Technology: Hall Effect
Sensing Range: 6mT Trip, -6mT Release
Current - Output (Max): 2mA
Current - Supply (Max): 16µA
Test Condition: 25°C
Description: MAGNETIC SWITCH TSOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: TSOT-23-3
Part Status: Active
Output Type: Analog Voltage
Polarization: North Pole, South Pole
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.5V
Technology: Hall Effect
Sensing Range: 6mT Trip, -6mT Release
Current - Output (Max): 2mA
Current - Supply (Max): 16µA
Test Condition: 25°C
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.5 EUR |
6000+ | 0.46 EUR |
9000+ | 0.43 EUR |
TSH248CX RFG |
Hersteller: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH TSOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: TSOT-23-3
Part Status: Active
Output Type: Analog Voltage
Polarization: North Pole, South Pole
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.5V
Technology: Hall Effect
Sensing Range: 6mT Trip, -6mT Release
Current - Output (Max): 2mA
Current - Supply (Max): 16µA
Test Condition: 25°C
Description: MAGNETIC SWITCH TSOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: TSOT-23-3
Part Status: Active
Output Type: Analog Voltage
Polarization: North Pole, South Pole
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 3.5V
Technology: Hall Effect
Sensing Range: 6mT Trip, -6mT Release
Current - Output (Max): 2mA
Current - Supply (Max): 16µA
Test Condition: 25°C
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.27 EUR |
19+ | 0.97 EUR |
25+ | 0.83 EUR |
50+ | 0.8 EUR |
100+ | 0.69 EUR |
500+ | 0.6 EUR |
1000+ | 0.52 EUR |
TSI10H100CW C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V I2PAK
Description: DIODE ARRAY SCHOTTKY 100V I2PAK
Produkt ist nicht verfügbar
TSI10H120CW C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 120V I2PAK
Description: DIODE ARRAY SCHOTTKY 120V I2PAK
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)TSI10H150CW C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 150V I2PAK
Description: DIODE ARRAY SCHOTTKY 150V I2PAK
Produkt ist nicht verfügbar
TSI10H200CW C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 200V I2PAK
Description: DIODE ARRAY SCHOTTKY 200V I2PAK
Produkt ist nicht verfügbar
TSI10L200CW C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 200V I2PAK
Description: DIODE ARRAY SCHOTTKY 200V I2PAK
auf Bestellung 3980 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.04 EUR |
10+ | 2.74 EUR |
100+ | 2.2 EUR |
500+ | 1.81 EUR |
1000+ | 1.5 EUR |
2000+ | 1.39 EUR |
TSI20H100CW C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V I2PAK
Description: DIODE ARRAY SCHOTTKY 100V I2PAK
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)TSI20H120CW C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 120V I2PAK
Description: DIODE ARRAY SCHOTTKY 120V I2PAK
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)TSI20H150CW C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 150V I2PAK
Description: DIODE ARRAY SCHOTTKY 150V I2PAK
auf Bestellung 993 Stücke:
Lieferzeit 10-14 Tag (e)TSI20H200CW C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 200V I2PAK
Description: DIODE ARRAY SCHOTTKY 200V I2PAK
auf Bestellung 760 Stücke:
Lieferzeit 10-14 Tag (e)TSI30H100CW C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V I2PAK
Description: DIODE ARRAY SCHOTTKY 100V I2PAK
Produkt ist nicht verfügbar
TSI30H120CW C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 120V I2PAK
Description: DIODE ARRAY SCHOTTKY 120V I2PAK
Produkt ist nicht verfügbar
TSI30H150CW C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 150V I2PAK
Description: DIODE ARRAY SCHOTTKY 150V I2PAK
auf Bestellung 940 Stücke:
Lieferzeit 10-14 Tag (e)TSI30H200CW C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 200V I2PAK
Description: DIODE ARRAY SCHOTTKY 200V I2PAK
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)TSM015NA03CR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 205A 8PDFN
Description: MOSFET N-CH 30V 205A 8PDFN
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)TSM015NA03CR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 205A 8PDFN
Description: MOSFET N-CH 30V 205A 8PDFN
auf Bestellung 4988 Stücke:
Lieferzeit 10-14 Tag (e)TSM018NA03CR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 185A 8PDFN
Description: MOSFET N-CH 30V 185A 8PDFN
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)TSM018NA03CR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 185A 8PDFN
Description: MOSFET N-CH 30V 185A 8PDFN
auf Bestellung 4815 Stücke:
Lieferzeit 10-14 Tag (e)TSM020N04LCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 170A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 27A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7942 pF @ 20 V
Description: MOSFET N-CH 40V 170A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 27A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7942 pF @ 20 V
Produkt ist nicht verfügbar
TSM020N04LCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 170A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 27A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7942 pF @ 20 V
Description: MOSFET N-CH 40V 170A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 27A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7942 pF @ 20 V
Produkt ist nicht verfügbar
TSM024NA04LCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 170A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4224 pF @ 20 V
Description: MOSFET N-CH 40V 170A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4224 pF @ 20 V
Produkt ist nicht verfügbar
TSM024NA04LCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 170A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4224 pF @ 20 V
Description: MOSFET N-CH 40V 170A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4224 pF @ 20 V
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.52 EUR |
10+ | 2.06 EUR |
TSM026NA03CR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 168A 8PDFN
Description: MOSFET N-CH 30V 168A 8PDFN
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)TSM026NA03CR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 168A 8PDFN
Description: MOSFET N-CH 30V 168A 8PDFN
auf Bestellung 4850 Stücke:
Lieferzeit 10-14 Tag (e)TSM033NA03CR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 129A 8PDFN
Description: MOSFET N-CH 30V 129A 8PDFN
Produkt ist nicht verfügbar
TSM033NA03CR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 129A 8PDFN
Description: MOSFET N-CH 30V 129A 8PDFN
auf Bestellung 2340 Stücke:
Lieferzeit 10-14 Tag (e)TSM033NA04LCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 141A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 141A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 20 V
Description: MOSFET N-CH 40V 141A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 141A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 20 V
Produkt ist nicht verfügbar
TSM033NA04LCR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 141A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 141A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 20 V
Description: MOSFET N-CH 40V 141A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 141A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 20 V
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.64 EUR |
10+ | 2.16 EUR |
TSM036N03PQ56 RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 124A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 15 V
Description: MOSFET N-CH 30V 124A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 15 V
Produkt ist nicht verfügbar
TSM036N03PQ56 RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 124A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 15 V
Description: MOSFET N-CH 30V 124A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 15 V
auf Bestellung 398 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.37 EUR |
16+ | 1.12 EUR |
100+ | 0.87 EUR |
TSM040N03CP ROG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CHANNEL 30V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.73 EUR |
TSM040N03CP ROG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 90A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CHANNEL 30V 90A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.32 EUR |
12+ | 1.57 EUR |
100+ | 1.1 EUR |
500+ | 0.89 EUR |
1000+ | 0.82 EUR |
TSM042N03CS RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 30A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CHANNEL 30V 30A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.31 EUR |
5000+ | 1.26 EUR |
TSM042N03CS RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 30A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CHANNEL 30V 30A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 14177 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.9 EUR |
10+ | 2.41 EUR |
100+ | 1.92 EUR |
500+ | 1.62 EUR |
1000+ | 1.38 EUR |
TSM045NA03CR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 108A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1194 pF @ 15 V
Description: MOSFET N-CH 30V 108A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1194 pF @ 15 V
Produkt ist nicht verfügbar
TSM045NA03CR RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 108A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1194 pF @ 15 V
Description: MOSFET N-CH 30V 108A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1194 pF @ 15 V
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.32 EUR |
16+ | 1.14 EUR |
TSM052N06PQ56 RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 100A 8PDFN
Description: MOSFET N-CH 60V 100A 8PDFN
Produkt ist nicht verfügbar
TSM052N06PQ56 RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 100A 8PDFN
Description: MOSFET N-CH 60V 100A 8PDFN
Produkt ist nicht verfügbar
TSM055N03EPQ56 RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 80A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
Description: MOSFET N-CH 30V 80A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
Produkt ist nicht verfügbar
TSM055N03EPQ56 RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 80A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
Description: MOSFET N-CH 30V 80A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.21 EUR |
17+ | 1.06 EUR |
TSM055N03PQ56 RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 80A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
Description: MOSFET N-CH 30V 80A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
Produkt ist nicht verfügbar
TSM055N03PQ56 RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 80A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
Description: MOSFET N-CH 30V 80A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.21 EUR |
17+ | 1.06 EUR |
100+ | 0.73 EUR |
TSM05N03CW RPG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
Description: MOSFET N-CHANNEL 30V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.4 EUR |
5000+ | 0.38 EUR |
12500+ | 0.35 EUR |
TSM05N03CW RPG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
Description: MOSFET N-CHANNEL 30V 5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
auf Bestellung 22115 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.06 EUR |
20+ | 0.91 EUR |
100+ | 0.63 EUR |
500+ | 0.53 EUR |
1000+ | 0.45 EUR |
TSM060N03CP ROG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
Description: MOSFET N-CHANNEL 30V 70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.48 EUR |
5000+ | 0.44 EUR |