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TSM020N04LCR RLG Taiwan Semiconductor
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Technische Details TSM020N04LCR RLG Taiwan Semiconductor
Description: MOSFET N-CH 40V 170A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 27A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7942 pF @ 20 V.
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TSM020N04LCR RLG | Hersteller : Taiwan Semiconductor |
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TSM020N04LCR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 170A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 27A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7942 pF @ 20 V |
Produkt ist nicht verfügbar |
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TSM020N04LCR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 170A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 27A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7942 pF @ 20 V |
Produkt ist nicht verfügbar |