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TSM036N03PQ56 RLG Taiwan Semiconductor
auf Bestellung 2353 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 1.36 EUR |
10+ | 1.13 EUR |
100+ | 0.88 EUR |
500+ | 0.74 EUR |
1000+ | 0.61 EUR |
2500+ | 0.57 EUR |
5000+ | 0.54 EUR |
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Technische Details TSM036N03PQ56 RLG Taiwan Semiconductor
Description: MOSFET N-CH 30V 124A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 124A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 22A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 15 V.
Weitere Produktangebote TSM036N03PQ56 RLG nach Preis ab 0.87 EUR bis 1.37 EUR
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TSM036N03PQ56 RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 30V 124A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 22A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 15 V |
auf Bestellung 398 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM036N03PQ56 RLG | Hersteller : Taiwan Semiconductor |
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TSM036N03PQ56 RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 30V 124A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 22A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 15 V |
Produkt ist nicht verfügbar |