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SSS6N60A SSS6N60A
Produktcode: 172151
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Fairchild Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Uds,V: 600 V
Idd,A: 3,2 A
Rds(on), Ohm: 1,8 Ohm
Ciss, pF/Qg, nC: 350/9,3
Bem.: Ізольований корпус
JHGF: THT
auf Bestellung 21 Stück:
Lieferzeit 21-28 Tag (e)
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SSS6N60A SSS6N60A
Produktcode: 43341
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Samsung sss6n60a-samsung.pdf Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Uds,V: 600
Idd,A: 03.02.2015
Rds(on), Ohm: 01.08.2015
Ciss, pF/Qg, nC: 03.09.350
Bem.: Ізольований корпус
JHGF: THT
verfügbar: 8 Stück
6 Stück - stock Köln
2 Stück - lieferbar in 3-4 Wochen
1+1.66 EUR
10+1.40 EUR
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STF6N60M2
Produktcode: 155644
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ST stf6n60m2.pdf Transistoren > MOSFET N-CH
Uds,V: 650 V
Idd,A: 4,5 A
Rds(on), Ohm: 1,2 Ohm
Ciss, pF/Qg, nC: 232/8
auf Bestellung 34 Stück:
Lieferzeit 21-28 Tag (e)
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6n60 to-220/f AAT
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
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6N60C FAIRCHILD
auf Bestellung 88800 Stücke:
Lieferzeit 21-28 Tag (e)
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FCP16N60 FCP16N60 onsemi fcp16n60-d.pdf Description: MOSFET N-CH 600V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 4838 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.79 EUR
50+3.53 EUR
100+3.22 EUR
500+3.12 EUR
Mindestbestellmenge: 3
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FQI6N60CTU FQI6N60CTU Fairchild Semiconductor FAIRS25433-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 5.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
auf Bestellung 1844 Stücke:
Lieferzeit 10-14 Tag (e)
398+1.26 EUR
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FQPF6N60 FQPF6N60 Fairchild Semiconductor FAIRS07077-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 3.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.8A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 887 Stücke:
Lieferzeit 10-14 Tag (e)
296+1.69 EUR
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FQPF6N60C FQPF6N60C Fairchild Semiconductor FAIRS27209-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 5.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
auf Bestellung 5632 Stücke:
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423+1.19 EUR
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IGD06N60TATMA1 Infineon INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw IGBT 600V 12A 88W TO252-3 TrenchStop -40+175°C   IGD06N60TATMA1 Infineon Technologies TIGD06n60t
Anzahl je Verpackung: 10 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)
20+1.91 EUR
Mindestbestellmenge: 20
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IGD06N60TATMA1 IGD06N60TATMA1 Infineon Technologies INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 4770 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.32 EUR
13+1.46 EUR
100+0.97 EUR
500+0.76 EUR
1000+0.69 EUR
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IGD06N60TATMA1 IGD06N60TATMA1 Infineon Technologies INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.62 EUR
Mindestbestellmenge: 2500
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IGP06N60TXKSA1 IGP06N60TXKSA1 INFINEON TECHNOLOGIES IGP06N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 6A
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.93 EUR
Mindestbestellmenge: 37
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IGP06N60TXKSA1 IGP06N60TXKSA1 INFINEON TECHNOLOGIES IGP06N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
37+1.93 EUR
46+1.56 EUR
500+0.94 EUR
1000+0.93 EUR
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IGP06N60TXKSA1 IGP06N60TXKSA1 Infineon Technologies IGP06N60T+Rev2_2G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432313ff5e0123b82d13ba7883 Description: IGBT TRENCH FS 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.10 EUR
50+1.49 EUR
100+1.33 EUR
Mindestbestellmenge: 6
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IKA06N60TXKSA1 IKA06N60TXKSA1 Infineon Technologies IKA06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42868603dee Description: IGBT TRENCH FS 600V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9.4ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 28 W
auf Bestellung 256 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.82 EUR
50+1.86 EUR
100+1.67 EUR
Mindestbestellmenge: 5
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IKB06N60TATMA1 IKB06N60TATMA1 Infineon Technologies IKB06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4286b603df2 Description: IGBT TRENCH FS 600V 12A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 615 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.01 EUR
10+2.57 EUR
100+1.76 EUR
500+1.40 EUR
Mindestbestellmenge: 5
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IKD06N60RATMA1 IKD06N60RATMA1 INFINEON TECHNOLOGIES IKD06N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 279ns
Turn-on time: 19ns
Pulsed collector current: 18A
Collector-emitter voltage: 600V
Collector current: 6A
auf Bestellung 918 Stücke:
Lieferzeit 14-21 Tag (e)
56+1.29 EUR
68+1.06 EUR
92+0.79 EUR
97+0.74 EUR
500+0.71 EUR
Mindestbestellmenge: 56
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IKD06N60RATMA1 IKD06N60RATMA1 INFINEON TECHNOLOGIES IKD06N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 279ns
Turn-on time: 19ns
Pulsed collector current: 18A
Collector-emitter voltage: 600V
Collector current: 6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 918 Stücke:
Lieferzeit 7-14 Tag (e)
56+1.29 EUR
68+1.06 EUR
92+0.79 EUR
97+0.74 EUR
500+0.71 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
IKD06N60RATMA1 IKD06N60RATMA1 Infineon Technologies Infineon-IKD06N60R-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5dd406a402d6 Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 110µJ (on), 220µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 1463 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.64 EUR
11+1.67 EUR
100+1.11 EUR
500+0.88 EUR
1000+0.80 EUR
Mindestbestellmenge: 7
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IKD06N60RC2ATMA1 IKD06N60RC2ATMA1 Infineon Technologies Infineon-IKD06N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652234ae34d20 Description: IGBT TRENCH FS 600V 11.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 6ns/129ns
Switching Energy: 170µJ (on), 80µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 11.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 51.7 W
auf Bestellung 4447 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.53 EUR
12+1.60 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
Mindestbestellmenge: 7
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IKD06N60RC2ATMA1 IKD06N60RC2ATMA1 Infineon Technologies Infineon-IKD06N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652234ae34d20 Description: IGBT TRENCH FS 600V 11.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 6ns/129ns
Switching Energy: 170µJ (on), 80µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 11.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 51.7 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.68 EUR
Mindestbestellmenge: 2500
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IKD06N60RF Infineon Transistor IGBT ; 600V; 20V; 12A; 18A; 100W; 4,3V~5,7V; 48nC; -40°C~175°C;   IKD06N60RF TIKD06n60rf
Anzahl je Verpackung: 10 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.06 EUR
Mindestbestellmenge: 20
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IKD06N60RFATMA1 IKD06N60RFATMA1 Infineon Technologies Infineon-EiceDRIVER_Gate_Driver_ICs-ProductSelectionGuide-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018094fa56806ee1&redirId=195507 Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/106ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 2390 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.06 EUR
10+1.95 EUR
100+1.31 EUR
500+1.03 EUR
1000+0.95 EUR
Mindestbestellmenge: 6
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IKN06N60RC2ATMA1 IKN06N60RC2ATMA1 Infineon Technologies Infineon-IKN06N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a73d90769 Description: IGBT 600V 8A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 8.8ns/174ns
Switching Energy: 151µJ (on), 104µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 7.2 W
auf Bestellung 5625 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.16 EUR
13+1.36 EUR
100+0.90 EUR
500+0.70 EUR
1000+0.64 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IKP06N60TXKSA1 IKP06N60TXKSA1 INFINEON TECHNOLOGIES IKP06N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 188ns
Turn-on time: 15ns
Pulsed collector current: 18A
Collector-emitter voltage: 600V
Collector current: 6A
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.96 EUR
42+1.73 EUR
61+1.19 EUR
65+1.12 EUR
Mindestbestellmenge: 37
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IKP06N60TXKSA1 IKP06N60TXKSA1 INFINEON TECHNOLOGIES IKP06N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 188ns
Turn-on time: 15ns
Pulsed collector current: 18A
Collector-emitter voltage: 600V
Collector current: 6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 96 Stücke:
Lieferzeit 7-14 Tag (e)
37+1.96 EUR
42+1.73 EUR
61+1.19 EUR
65+1.12 EUR
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IKP06N60TXKSA1 IKP06N60TXKSA1 Infineon Technologies IKP06N60T+Rev2_3G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bcc72f95356d Description: IGBT TRENCH FS 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 686 Stücke:
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IKU06N60R IKU06N60R Infineon Technologies INFNS19240-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH 600V 12A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO251-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 330µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 1500 Stücke:
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562+0.89 EUR
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IRFIB6N60A Vishay sihfib6n.pdf N-MOSFET 600V 5.5A 60W IRFIB6N60A Vishay TIRFIB6n60a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
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10+2.96 EUR
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IRFIB6N60APBF IRFIB6N60APBF VISHAY IRFIB6N60A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 99 Stücke:
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17+4.38 EUR
35+2.07 EUR
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IRFIB6N60APBF IRFIB6N60APBF Vishay Siliconix sihfib6n.pdf Description: MOSFET N-CH 600V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 773 Stücke:
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3+6.32 EUR
50+4.07 EUR
100+3.41 EUR
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IXFA16N60P3 IXFA16N60P3 IXYS IXFA(H,P)16N60P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.89 EUR
12+6.03 EUR
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IXFA16N60P3 IXFA16N60P3 IXYS IXFA(H,P)16N60P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 81 Stücke:
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9+8.89 EUR
12+6.03 EUR
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IXFH26N60P IXFH26N60P IXYS IXFH26N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 300 Stücke:
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7+11.33 EUR
9+8.12 EUR
10+7.68 EUR
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IXFH26N60P IXFH26N60P Littelfuse Inc. Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH26N60P-Datasheet.PDF?assetguid=7F279F9D-6FA3-416E-88EF-49FFF079F4B3 Description: MOSFET N-CH 600V 26A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
auf Bestellung 3214 Stücke:
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IXFH36N60P IXFH36N60P Littelfuse Inc. Description: MOSFET N-CH 600V 36A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 18A, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
auf Bestellung 746 Stücke:
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IXFH36N60X3 IXFH36N60X3 Littelfuse Inc. Description: MOSFET ULTRA JCT 600V 36A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
auf Bestellung 123 Stücke:
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2+13.94 EUR
30+8.68 EUR
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IXFK36N60P IXFK36N60P IXYS IXFH(K,T)36N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 13 Stücke:
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5+14.40 EUR
7+10.83 EUR
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IXFK36N60P IXFK36N60P IXYS IXFH(K,T)36N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
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5+14.40 EUR
7+10.83 EUR
25+10.65 EUR
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IXFP16N60P3 IXFP16N60P3 IXYS IXFA(H,P)16N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 269 Stücke:
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13+5.65 EUR
15+5.08 EUR
18+4.06 EUR
19+3.85 EUR
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IXFP16N60P3 IXFP16N60P3 IXYS IXFA(H,P)16N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 269 Stücke:
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IXFR36N60P IXFR36N60P Littelfuse Inc. Description: MOSFET N-CH 600V 20A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 18A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
auf Bestellung 268 Stücke:
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1+27.21 EUR
30+16.79 EUR
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IXGH36N60B3 IXGH36N60B3 IXYS IXGH36N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Gate-emitter voltage: ±20V
Turn-off time: 350ns
Turn-on time: 45ns
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Collector current: 36A
auf Bestellung 240 Stücke:
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13+5.92 EUR
15+4.85 EUR
16+4.59 EUR
120+4.49 EUR
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IXGH36N60B3 IXGH36N60B3 IXYS IXGH36N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Gate-emitter voltage: ±20V
Turn-off time: 350ns
Turn-on time: 45ns
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Collector current: 36A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 240 Stücke:
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13+5.92 EUR
15+4.85 EUR
16+4.59 EUR
120+4.49 EUR
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IXGH36N60B3C1 IXGH36N60B3C1 IXYS IXGx36N60B3C1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Gate-emitter voltage: ±20V
Turn-off time: 350ns
Turn-on time: 47ns
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Collector current: 36A
auf Bestellung 1 Stücke:
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1+71.50 EUR
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IXGH36N60B3C1 IXGH36N60B3C1 IXYS IXGx36N60B3C1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Gate-emitter voltage: ±20V
Turn-off time: 350ns
Turn-on time: 47ns
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Collector current: 36A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.50 EUR
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NTB6N60 NTB6N60 onsemi ONSMS32470-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 9939 Stücke:
Lieferzeit 10-14 Tag (e)
503+1.01 EUR
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NTP6N60 NTP6N60 onsemi ONSMS27948-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 79150 Stücke:
Lieferzeit 10-14 Tag (e)
355+1.43 EUR
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SIHB186N60EF-GE3 SIHB186N60EF-GE3 Vishay Siliconix sihb186n60ef.pdf Description: MOSFET N-CH 600V 8.4A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 3284 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.32 EUR
50+3.19 EUR
100+3.05 EUR
500+2.50 EUR
1000+2.32 EUR
2000+2.23 EUR
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SIHD186N60EF-GE3 SIHD186N60EF-GE3 Vishay Siliconix sihd186n60ef.pdf Description: MOSFET N-CH 600V 19A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 201mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 100 V
auf Bestellung 6130 Stücke:
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4+5.47 EUR
50+2.79 EUR
100+2.53 EUR
500+2.33 EUR
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SIHG026N60EF-GE3 SIHG026N60EF-GE3 Vishay Siliconix sihg026n60ef.pdf Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 10V
Power Dissipation (Max): 521W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7926 pF @ 100 V
auf Bestellung 203 Stücke:
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1+18.15 EUR
10+13.60 EUR
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SIHG186N60EF-GE3 SIHG186N60EF-GE3 Vishay Siliconix sihg186n60ef.pdf Description: MOSFET N-CH 600V 8.4A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 207 Stücke:
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3+7.18 EUR
25+4.16 EUR
100+3.50 EUR
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SIHH186N60EF-T1GE3 SIHH186N60EF-T1GE3 Vishay Siliconix sihh186n60ef.pdf Description: MOSFET N-CH 600V 16A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 4567 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.36 EUR
10+6.45 EUR
100+4.83 EUR
500+4.41 EUR
1000+4.05 EUR
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SIHH26N60E-T1-GE3 SIHH26N60E-T1-GE3 Vishay Siliconix sihh26n60e.pdf Description: MOSFET N-CH 600V 25A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 13A, 10V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2815 pF @ 100 V
auf Bestellung 5585 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.24 EUR
10+7.47 EUR
100+6.04 EUR
500+5.24 EUR
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SIHP186N60EF-GE3 SIHP186N60EF-GE3 Vishay Siliconix sihp186n60ef.pdf Description: MOSFET N-CH 600V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.53 EUR
10+5.36 EUR
100+4.09 EUR
500+3.63 EUR
1000+3.29 EUR
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SPP06N60C3XKSA1 SPP06N60C3XKSA1 Infineon Technologies Infineon-SPP06N60C3-DS-v01_04-en.pdf?fileId=db3a304412b407950112b42e2a60496d Description: SPP06N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
auf Bestellung 3964 Stücke:
Lieferzeit 10-14 Tag (e)
247+2.05 EUR
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STB36N60M6 STB36N60M6 STMicroelectronics STB36N60M6.pdf Description: MOSFET N-CH 600V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V
auf Bestellung 944 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.98 EUR
10+7.40 EUR
100+5.36 EUR
500+4.49 EUR
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STB6N60M2 STB6N60M2 STMicroelectronics en.DM00087513.pdf Description: MOSFET N-CH 600V 4.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 232 pF @ 100 V
auf Bestellung 9889 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.63 EUR
10+2.32 EUR
100+1.57 EUR
500+1.25 EUR
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STB6N60M2 STB6N60M2 STMicroelectronics en.DM00087513.pdf Description: MOSFET N-CH 600V 4.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 232 pF @ 100 V
auf Bestellung 9000 Stücke:
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1000+0.98 EUR
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SSS6N60A
Produktcode: 172151
zu Favoriten hinzufügen Lieblingsprodukt

SSS6N60A
Hersteller: Fairchild
Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Uds,V: 600 V
Idd,A: 3,2 A
Rds(on), Ohm: 1,8 Ohm
Ciss, pF/Qg, nC: 350/9,3
Bem.: Ізольований корпус
JHGF: THT
auf Bestellung 21 Stück:
Lieferzeit 21-28 Tag (e)
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SSS6N60A
Produktcode: 43341
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sss6n60a-samsung.pdf
SSS6N60A
Hersteller: Samsung
Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Uds,V: 600
Idd,A: 03.02.2015
Rds(on), Ohm: 01.08.2015
Ciss, pF/Qg, nC: 03.09.350
Bem.: Ізольований корпус
JHGF: THT
verfügbar: 8 Stück
6 Stück - stock Köln
2 Stück - lieferbar in 3-4 Wochen
Anzahl Preis
1+1.66 EUR
10+1.40 EUR
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STF6N60M2
Produktcode: 155644
zu Favoriten hinzufügen Lieblingsprodukt

stf6n60m2.pdf
Hersteller: ST
Transistoren > MOSFET N-CH
Uds,V: 650 V
Idd,A: 4,5 A
Rds(on), Ohm: 1,2 Ohm
Ciss, pF/Qg, nC: 232/8
auf Bestellung 34 Stück:
Lieferzeit 21-28 Tag (e)
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6n60
Hersteller: to-220/f
AAT
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
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6N60C
Hersteller: FAIRCHILD
auf Bestellung 88800 Stücke:
Lieferzeit 21-28 Tag (e)
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FCP16N60 fcp16n60-d.pdf
FCP16N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 4838 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.79 EUR
50+3.53 EUR
100+3.22 EUR
500+3.12 EUR
Mindestbestellmenge: 3
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FQI6N60CTU FAIRS25433-1.pdf?t.download=true&u=5oefqw
FQI6N60CTU
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 5.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
auf Bestellung 1844 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
398+1.26 EUR
Mindestbestellmenge: 398
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FQPF6N60 FAIRS07077-1.pdf?t.download=true&u=5oefqw
FQPF6N60
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 3.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.8A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 887 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
296+1.69 EUR
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FQPF6N60C FAIRS27209-1.pdf?t.download=true&u=5oefqw
FQPF6N60C
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 5.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
auf Bestellung 5632 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
423+1.19 EUR
Mindestbestellmenge: 423
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IGD06N60TATMA1 INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon
IGBT 600V 12A 88W TO252-3 TrenchStop -40+175°C   IGD06N60TATMA1 Infineon Technologies TIGD06n60t
Anzahl je Verpackung: 10 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+1.91 EUR
Mindestbestellmenge: 20
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IGD06N60TATMA1 INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw
IGD06N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 4770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.32 EUR
13+1.46 EUR
100+0.97 EUR
500+0.76 EUR
1000+0.69 EUR
Mindestbestellmenge: 8
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IGD06N60TATMA1 INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw
IGD06N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.62 EUR
Mindestbestellmenge: 2500
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IGP06N60TXKSA1 IGP06N60T-DTE.pdf
IGP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 6A
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.93 EUR
Mindestbestellmenge: 37
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IGP06N60TXKSA1 IGP06N60T-DTE.pdf
IGP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
37+1.93 EUR
46+1.56 EUR
500+0.94 EUR
1000+0.93 EUR
Mindestbestellmenge: 37
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IGP06N60TXKSA1 IGP06N60T+Rev2_2G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432313ff5e0123b82d13ba7883
IGP06N60TXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.10 EUR
50+1.49 EUR
100+1.33 EUR
Mindestbestellmenge: 6
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IKA06N60TXKSA1 IKA06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42868603dee
IKA06N60TXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9.4ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 28 W
auf Bestellung 256 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.82 EUR
50+1.86 EUR
100+1.67 EUR
Mindestbestellmenge: 5
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IKB06N60TATMA1 IKB06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4286b603df2
IKB06N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 615 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.01 EUR
10+2.57 EUR
100+1.76 EUR
500+1.40 EUR
Mindestbestellmenge: 5
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IKD06N60RATMA1 IKD06N60R.pdf
IKD06N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 279ns
Turn-on time: 19ns
Pulsed collector current: 18A
Collector-emitter voltage: 600V
Collector current: 6A
auf Bestellung 918 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
68+1.06 EUR
92+0.79 EUR
97+0.74 EUR
500+0.71 EUR
Mindestbestellmenge: 56
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IKD06N60RATMA1 IKD06N60R.pdf
IKD06N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 279ns
Turn-on time: 19ns
Pulsed collector current: 18A
Collector-emitter voltage: 600V
Collector current: 6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 918 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
56+1.29 EUR
68+1.06 EUR
92+0.79 EUR
97+0.74 EUR
500+0.71 EUR
Mindestbestellmenge: 56
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IKD06N60RATMA1 Infineon-IKD06N60R-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5dd406a402d6
IKD06N60RATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 110µJ (on), 220µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 1463 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.64 EUR
11+1.67 EUR
100+1.11 EUR
500+0.88 EUR
1000+0.80 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IKD06N60RC2ATMA1 Infineon-IKD06N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652234ae34d20
IKD06N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 11.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 6ns/129ns
Switching Energy: 170µJ (on), 80µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 11.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 51.7 W
auf Bestellung 4447 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.53 EUR
12+1.60 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IKD06N60RC2ATMA1 Infineon-IKD06N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652234ae34d20
IKD06N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 11.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 6ns/129ns
Switching Energy: 170µJ (on), 80µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 11.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 51.7 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.68 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IKD06N60RF
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 12A; 18A; 100W; 4,3V~5,7V; 48nC; -40°C~175°C;   IKD06N60RF TIKD06n60rf
Anzahl je Verpackung: 10 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+2.06 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IKD06N60RFATMA1 Infineon-EiceDRIVER_Gate_Driver_ICs-ProductSelectionGuide-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018094fa56806ee1&redirId=195507
IKD06N60RFATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/106ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 2390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.06 EUR
10+1.95 EUR
100+1.31 EUR
500+1.03 EUR
1000+0.95 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKN06N60RC2ATMA1 Infineon-IKN06N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a73d90769
IKN06N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 8A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 8.8ns/174ns
Switching Energy: 151µJ (on), 104µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 7.2 W
auf Bestellung 5625 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.16 EUR
13+1.36 EUR
100+0.90 EUR
500+0.70 EUR
1000+0.64 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IKP06N60TXKSA1 IKP06N60T.pdf
IKP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 188ns
Turn-on time: 15ns
Pulsed collector current: 18A
Collector-emitter voltage: 600V
Collector current: 6A
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.96 EUR
42+1.73 EUR
61+1.19 EUR
65+1.12 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
IKP06N60TXKSA1 IKP06N60T.pdf
IKP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 188ns
Turn-on time: 15ns
Pulsed collector current: 18A
Collector-emitter voltage: 600V
Collector current: 6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 96 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
37+1.96 EUR
42+1.73 EUR
61+1.19 EUR
65+1.12 EUR
500+1.07 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
IKP06N60TXKSA1 IKP06N60T+Rev2_3G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bcc72f95356d
IKP06N60TXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 686 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.66 EUR
50+1.77 EUR
100+1.59 EUR
500+1.27 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKU06N60R INFNS19240-1.pdf?t.download=true&u=5oefqw
IKU06N60R
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 12A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO251-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 330µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
562+0.89 EUR
Mindestbestellmenge: 562
Im Einkaufswagen  Stück im Wert von  UAH
IRFIB6N60A sihfib6n.pdf
Hersteller: Vishay
N-MOSFET 600V 5.5A 60W IRFIB6N60A Vishay TIRFIB6n60a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+2.96 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRFIB6N60APBF IRFIB6N60A.pdf
IRFIB6N60APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.38 EUR
35+2.07 EUR
45+1.62 EUR
47+1.53 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRFIB6N60APBF sihfib6n.pdf
IRFIB6N60APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 773 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.32 EUR
50+4.07 EUR
100+3.41 EUR
500+3.35 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFA16N60P3 IXFA(H,P)16N60P3.pdf
IXFA16N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.89 EUR
12+6.03 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFA16N60P3 IXFA(H,P)16N60P3.pdf
IXFA16N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 81 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
9+8.89 EUR
12+6.03 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFH26N60P IXFH26N60P.pdf
IXFH26N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.33 EUR
9+8.12 EUR
10+7.68 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFH26N60P Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH26N60P-Datasheet.PDF?assetguid=7F279F9D-6FA3-416E-88EF-49FFF079F4B3
IXFH26N60P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 26A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
auf Bestellung 3214 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.35 EUR
30+10.08 EUR
120+8.56 EUR
510+7.87 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFH36N60P
IXFH36N60P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 36A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 18A, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
auf Bestellung 746 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.43 EUR
30+13.25 EUR
120+11.67 EUR
510+11.27 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFH36N60X3
IXFH36N60X3
Hersteller: Littelfuse Inc.
Description: MOSFET ULTRA JCT 600V 36A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
auf Bestellung 123 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.94 EUR
30+8.68 EUR
120+7.46 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFK36N60P IXFH(K,T)36N60P.pdf
IXFK36N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.40 EUR
7+10.83 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFK36N60P IXFH(K,T)36N60P.pdf
IXFK36N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+14.40 EUR
7+10.83 EUR
25+10.65 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXFP16N60P3 IXFA(H,P)16N60P3.pdf
IXFP16N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 269 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.65 EUR
15+5.08 EUR
18+4.06 EUR
19+3.85 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXFP16N60P3 IXFA(H,P)16N60P3.pdf
IXFP16N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 269 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.65 EUR
15+5.08 EUR
18+4.06 EUR
19+3.85 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXFR36N60P
IXFR36N60P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 20A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 18A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.21 EUR
30+16.79 EUR
120+14.51 EUR
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IXGH36N60B3 IXGH36N60B3.pdf
IXGH36N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Gate-emitter voltage: ±20V
Turn-off time: 350ns
Turn-on time: 45ns
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Collector current: 36A
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.92 EUR
15+4.85 EUR
16+4.59 EUR
120+4.49 EUR
Mindestbestellmenge: 13
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IXGH36N60B3 IXGH36N60B3.pdf
IXGH36N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Gate-emitter voltage: ±20V
Turn-off time: 350ns
Turn-on time: 45ns
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Collector current: 36A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 240 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.92 EUR
15+4.85 EUR
16+4.59 EUR
120+4.49 EUR
Mindestbestellmenge: 13
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IXGH36N60B3C1 IXGx36N60B3C1-DTE.pdf
IXGH36N60B3C1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Gate-emitter voltage: ±20V
Turn-off time: 350ns
Turn-on time: 47ns
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Collector current: 36A
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.50 EUR
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IXGH36N60B3C1 IXGx36N60B3C1-DTE.pdf
IXGH36N60B3C1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Gate-emitter voltage: ±20V
Turn-off time: 350ns
Turn-on time: 47ns
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Collector current: 36A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+71.50 EUR
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NTB6N60 ONSMS32470-1.pdf?t.download=true&u=5oefqw
NTB6N60
Hersteller: onsemi
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 9939 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
503+1.01 EUR
Mindestbestellmenge: 503
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NTP6N60 ONSMS27948-1.pdf?t.download=true&u=5oefqw
NTP6N60
Hersteller: onsemi
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 79150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
355+1.43 EUR
Mindestbestellmenge: 355
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SIHB186N60EF-GE3 sihb186n60ef.pdf
SIHB186N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 8.4A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 3284 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.32 EUR
50+3.19 EUR
100+3.05 EUR
500+2.50 EUR
1000+2.32 EUR
2000+2.23 EUR
Mindestbestellmenge: 3
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SIHD186N60EF-GE3 sihd186n60ef.pdf
SIHD186N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 19A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 201mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 100 V
auf Bestellung 6130 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.47 EUR
50+2.79 EUR
100+2.53 EUR
500+2.33 EUR
Mindestbestellmenge: 4
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SIHG026N60EF-GE3 sihg026n60ef.pdf
SIHG026N60EF-GE3
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 10V
Power Dissipation (Max): 521W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7926 pF @ 100 V
auf Bestellung 203 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.15 EUR
10+13.60 EUR
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SIHG186N60EF-GE3 sihg186n60ef.pdf
SIHG186N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 8.4A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 207 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.18 EUR
25+4.16 EUR
100+3.50 EUR
Mindestbestellmenge: 3
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SIHH186N60EF-T1GE3 sihh186n60ef.pdf
SIHH186N60EF-T1GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 16A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 4567 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.36 EUR
10+6.45 EUR
100+4.83 EUR
500+4.41 EUR
1000+4.05 EUR
Mindestbestellmenge: 3
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SIHH26N60E-T1-GE3 sihh26n60e.pdf
SIHH26N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 25A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 13A, 10V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2815 pF @ 100 V
auf Bestellung 5585 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.24 EUR
10+7.47 EUR
100+6.04 EUR
500+5.24 EUR
1000+4.52 EUR
Mindestbestellmenge: 2
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SIHP186N60EF-GE3 sihp186n60ef.pdf
SIHP186N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.53 EUR
10+5.36 EUR
100+4.09 EUR
500+3.63 EUR
1000+3.29 EUR
Mindestbestellmenge: 3
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SPP06N60C3XKSA1 Infineon-SPP06N60C3-DS-v01_04-en.pdf?fileId=db3a304412b407950112b42e2a60496d
SPP06N60C3XKSA1
Hersteller: Infineon Technologies
Description: SPP06N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
auf Bestellung 3964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
247+2.05 EUR
Mindestbestellmenge: 247
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STB36N60M6 STB36N60M6.pdf
STB36N60M6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V
auf Bestellung 944 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.98 EUR
10+7.40 EUR
100+5.36 EUR
500+4.49 EUR
Mindestbestellmenge: 2
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STB6N60M2 en.DM00087513.pdf
STB6N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 4.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 232 pF @ 100 V
auf Bestellung 9889 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+2.32 EUR
100+1.57 EUR
500+1.25 EUR
Mindestbestellmenge: 5
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STB6N60M2 en.DM00087513.pdf
STB6N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 4.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 232 pF @ 100 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.98 EUR
Mindestbestellmenge: 1000
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