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Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHF18N50D-E3 Produktcode: 188008 |
Vishay |
Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 550 V Idd,A: 18 A Rds(on), Ohm: 0,28 Ohm Ciss, pF/Qg, nC: 1500/38 JHGF: THT |
erwartet:
10 Stück
10 Stück - erwartet
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BXP18N50F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 72A Power dissipation: 42.8W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 229 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP18N50F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 72A Power dissipation: 42.8W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 229 Stücke: Lieferzeit 7-14 Tag (e) |
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CNX718N50005T | Visual Communications Company - VCC |
Description: LED 18MM GREEN 5V TAB PNL MNT Packaging: Bulk Voltage: 5V Type: LED Millicandela Rating: 2400mcd Termination Style: Quick Connect - 0.187" (4.7mm) Lens Color: Green Ratings: DC Panel Cutout Dimensions: 0.69" (17.53mm) Lens Transparency: Clear Lamp Color: Green Panel Cutout Shape: Round Lens Style: Round with Domed Top Lens Size: 18.50mm Dia |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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CNX718N50005T | VCC | LED Panel Mount Indicators PANEL MNT INDICATOR 18MM GRN 5V TAB |
auf Bestellung 45 Stücke: Lieferzeit 10-14 Tag (e) |
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CNX718N50005W | Visual Communications Company - VCC |
Description: LED 18MM GREEN 5V WIRE PNL MNT Packaging: Bulk Voltage: 5V Type: LED Millicandela Rating: 2400mcd Termination Style: Wire Leads - 6" (152.40mm) Lens Color: Green Ratings: DC Panel Cutout Dimensions: 0.69" (17.53mm) Lens Transparency: Clear Lamp Color: Green Panel Cutout Shape: Round Lens Style: Round with Domed Top Lens Size: 18.50mm Dia |
auf Bestellung 72 Stücke: Lieferzeit 10-14 Tag (e) |
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CNX718N500120T | Visual Communications Company - VCC |
Description: LED 18MM GREEN 120V TAB PNL MNT Packaging: Bulk Voltage: 120V Type: LED Millicandela Rating: 2400mcd Termination Style: Quick Connect - 0.187" (4.7mm) Lens Color: Green Ratings: AC Panel Cutout Dimensions: 0.69" (17.53mm) Lens Transparency: Clear Lamp Color: Green Panel Cutout Shape: Round Lens Style: Round with Domed Top Lens Size: 18.50mm Dia |
auf Bestellung 64 Stücke: Lieferzeit 10-14 Tag (e) |
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CNX718N500120T | VCC | LED Panel Mount Indicators PANEL MNT INDICATOR 18MM GRN 120V TAB |
auf Bestellung 37 Stücke: Lieferzeit 10-14 Tag (e) |
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CNX718N500120W | Visual Communications Company - VCC |
Description: LED 18MM GREEN 120V WIRE PNL MNT Packaging: Bulk Voltage: 120V Type: LED Millicandela Rating: 2400mcd Termination Style: Wire Leads - 6" (152.40mm) Lens Color: Green Ratings: AC Panel Cutout Dimensions: 0.69" (17.53mm) Lens Transparency: Clear Lamp Color: Green Panel Cutout Shape: Round Lens Style: Round with Domed Top Lens Size: 18.50mm Dia |
auf Bestellung 46 Stücke: Lieferzeit 10-14 Tag (e) |
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CNX718N50012T | VCC | LED Panel Mount Indicators PANEL MNT INDICATOR 18MM GRN 12V TAB |
auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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CNX718N50012T | Visual Communications Company - VCC |
Description: LED 18MM GREEN 12V TAB PNL MNT Packaging: Bulk Voltage: 12V Type: LED Millicandela Rating: 2400mcd Termination Style: Quick Connect - 0.187" (4.7mm) Lens Color: Green Ratings: DC Panel Cutout Dimensions: 0.69" (17.53mm) Lens Transparency: Clear Lamp Color: Green Panel Cutout Shape: Round Lens Style: Round with Domed Top Lens Size: 18.50mm Dia |
auf Bestellung 170 Stücke: Lieferzeit 10-14 Tag (e) |
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CNX718N50012W | Visual Communications Company - VCC |
Description: LED 18MM GREEN 12V WIRE PNL MNT Packaging: Bulk Voltage: 12V Type: LED Millicandela Rating: 2400mcd Termination Style: Wire Leads - 6" (152.40mm) Lens Color: Green Ratings: DC Panel Cutout Dimensions: 0.69" (17.53mm) Lens Transparency: Clear Lamp Color: Green Panel Cutout Shape: Round Lens Style: Round with Domed Top Lens Size: 18.50mm Dia |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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CNX718N50028T | VCC | LED Panel Mount Indicators PANEL MNT INDICATOR 18MM GRN 28V TAB |
auf Bestellung 31 Stücke: Lieferzeit 10-14 Tag (e) |
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CNX718N50028W | Visual Communications Company - VCC |
Description: LED 18MM GREEN 28V WIRE PNL MNT Packaging: Bulk Voltage: 28V Type: LED Millicandela Rating: 2400mcd Termination Style: Wire Leads - 6" (152.40mm) Lens Color: Green Ratings: DC Panel Cutout Dimensions: 0.69" (17.53mm) Lens Transparency: Clear Lamp Color: Green Panel Cutout Shape: Round Lens Style: Round with Domed Top Lens Size: 18.50mm Dia |
auf Bestellung 179 Stücke: Lieferzeit 10-14 Tag (e) |
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FDA18N50 | Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, 1 Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 9.5A, 10V Power Dissipation (Max): 239W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V |
auf Bestellung 1564 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP18N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 235W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP18N50 | ON-Semicoductor |
Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 235W; -55°C ~ 150°C; FDP18N50 TFDP18n50 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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FDP18N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 235W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 42 Stücke: Lieferzeit 7-14 Tag (e) |
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FDP18N50 | onsemi / Fairchild | MOSFETs 500V N-Channel PowerTrench MOSFET |
auf Bestellung 5410 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP18N50 | onsemi |
Description: MOSFET N-CH 500V 18A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V Power Dissipation (Max): 235W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V |
auf Bestellung 364 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPF18N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 116 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF18N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 116 Stücke: Lieferzeit 7-14 Tag (e) |
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FDPF18N50 | ON-Semicoductor |
Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 38,5W; -55°C ~ 150°C; FDPF18N50 TFDPF18n50 Anzahl je Verpackung: 3 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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FDPF18N50 | onsemi / Fairchild | MOSFETs 500V N-CH MOSFET |
auf Bestellung 1902 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPF18N50 | onsemi |
Description: MOSFET N-CH 500V 18A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V Power Dissipation (Max): 38.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V |
auf Bestellung 11300 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPF18N50T | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 132 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF18N50T | onsemi / Fairchild | MOSFETs 500V N-Channel PowerTrench MOSFET |
auf Bestellung 830 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPF18N50T | onsemi |
Description: MOSFET N-CH 500V 18A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V Power Dissipation (Max): 38.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V |
auf Bestellung 991 Stücke: Lieferzeit 10-14 Tag (e) |
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FQA18N50V2 | Fairchild Semiconductor |
Description: MOSFET N-CH 500V 20A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 10A, 10V Power Dissipation (Max): 277W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V |
auf Bestellung 380 Stücke: Lieferzeit 10-14 Tag (e) |
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FQH18N50V2 | Fairchild Semiconductor |
Description: MOSFET N-CH 500V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 10A, 10V Power Dissipation (Max): 277W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V |
auf Bestellung 4058 Stücke: Lieferzeit 10-14 Tag (e) |
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FQP18N50V2 | Fairchild Semiconductor |
Description: MOSFET N-CH 500V 18A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V |
auf Bestellung 532 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF18N50V2SDTU | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tj) Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V |
auf Bestellung 4950 Stücke: Lieferzeit 10-14 Tag (e) |
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G18N50T | Goford Semiconductor |
Description: MOSFET N-CH 500V 18A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 9A, 10V Power Dissipation (Max): 189.3W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 250 V |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFB18N50KPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 220W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 220W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 276 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB18N50KPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 220W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 220W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 276 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFB18N50KPBF | Vishay Siliconix |
Description: MOSFET N-CH 500V 17A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V Power Dissipation (Max): 220W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V |
auf Bestellung 885 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFB18N50KPBF | Vishay Semiconductors | MOSFETs RECOMMENDED ALT SIHP18N50C-E3 |
auf Bestellung 903 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHF18N50D-E3 | Vishay Siliconix |
Description: MOSFET N-CH 500V 18A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 9A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 419 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP18N50C-E3 | Vishay Semiconductors | MOSFETs 500V Vds 30V Vgs TO-220AB |
auf Bestellung 6854 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP18N50C-E3 | Vishay Siliconix |
Description: MOSFET N-CH 500V 18A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V Power Dissipation (Max): 223W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V |
auf Bestellung 532 Stücke: Lieferzeit 10-14 Tag (e) |
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SIT1602BC-12-18N-50.000000 | SiTime |
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS Packaging: Strip Package / Case: 4-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: HCMOS, LVCMOS Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±25ppm Voltage - Supply: 1.8V Current - Supply (Max): 4.1mA Height - Seated (Max): 0.031" (0.80mm) Part Status: Active Frequency: 50 MHz Base Resonator: MEMS |
auf Bestellung 476353 Stücke: Lieferzeit 10-14 Tag (e) |
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SIT1602BC-13-18N-50.000000 | SiTime |
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS Packaging: Strip Package / Case: 4-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: HCMOS, LVCMOS Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V Current - Supply (Max): 4.1mA Height - Seated (Max): 0.031" (0.80mm) Part Status: Active Frequency: 50 MHz Base Resonator: MEMS |
auf Bestellung 476353 Stücke: Lieferzeit 10-14 Tag (e) |
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SIT1602BC-22-18N-50.000000 | SiTime |
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS Packaging: Strip Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: HCMOS, LVCMOS Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±25ppm Voltage - Supply: 1.8V Current - Supply (Max): 4.1mA Height - Seated (Max): 0.031" (0.80mm) Part Status: Active Frequency: 50 MHz Base Resonator: MEMS |
auf Bestellung 13618 Stücke: Lieferzeit 10-14 Tag (e) |
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SIT1602BC-23-18N-50.000000 | SiTime |
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS Packaging: Strip Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: HCMOS, LVCMOS Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V Current - Supply (Max): 4.1mA Height - Seated (Max): 0.031" (0.80mm) Part Status: Active Frequency: 50 MHz Base Resonator: MEMS |
auf Bestellung 13618 Stücke: Lieferzeit 10-14 Tag (e) |
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SIT1602BC-33-18N-50.000000 | SiTime |
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS Packaging: Strip Package / Case: 4-SMD, No Lead Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Mounting Type: Surface Mount Output: HCMOS, LVCMOS Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V Current - Supply (Max): 4.1mA Height - Seated (Max): 0.031" (0.80mm) Part Status: Active Frequency: 50 MHz Base Resonator: MEMS |
auf Bestellung 25292 Stücke: Lieferzeit 10-14 Tag (e) |
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SIT1602BC-72-18N-50.000000 | SiTime |
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS Packaging: Strip Package / Case: 4-SMD, No Lead Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm) Mounting Type: Surface Mount Output: HCMOS, LVCMOS Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±25ppm Voltage - Supply: 1.8V Current - Supply (Max): 4.1mA Height - Seated (Max): 0.031" (0.80mm) Part Status: Active Frequency: 50 MHz Base Resonator: MEMS |
auf Bestellung 21923 Stücke: Lieferzeit 10-14 Tag (e) |
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SIT1602BC-73-18N-50.000000 | SiTime |
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS Packaging: Strip Package / Case: 4-SMD, No Lead Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm) Mounting Type: Surface Mount Output: HCMOS, LVCMOS Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V Current - Supply (Max): 4.1mA Height - Seated (Max): 0.031" (0.80mm) Part Status: Active Frequency: 50 MHz Base Resonator: MEMS |
auf Bestellung 21923 Stücke: Lieferzeit 10-14 Tag (e) |
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SIT1602BC-83-18N-50.000000 | SiTime |
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS Packaging: Strip Package / Case: 4-SMD, No Lead Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Mounting Type: Surface Mount Output: HCMOS, LVCMOS Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V Current - Supply (Max): 4.1mA Height - Seated (Max): 0.039" (1.00mm) Part Status: Active Frequency: 50 MHz Base Resonator: MEMS |
auf Bestellung 30141 Stücke: Lieferzeit 10-14 Tag (e) |
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SIT1602BI-12-18N-50.000000 | SiTime |
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS Packaging: Strip Package / Case: 4-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: HCMOS, LVCMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 1.8V Current - Supply (Max): 4.1mA Height - Seated (Max): 0.031" (0.80mm) Part Status: Active Frequency: 50 MHz Base Resonator: MEMS |
auf Bestellung 476353 Stücke: Lieferzeit 10-14 Tag (e) |
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SIT1602BI-13-18N-50.000000 | SiTime |
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS Packaging: Strip Package / Case: 4-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: HCMOS, LVCMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V Current - Supply (Max): 4.1mA Height - Seated (Max): 0.031" (0.80mm) Part Status: Active Frequency: 50 MHz Base Resonator: MEMS |
auf Bestellung 476353 Stücke: Lieferzeit 10-14 Tag (e) |
|
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SIT1602BI-22-18N-50.000000 | SiTime |
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS Packaging: Strip Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: HCMOS, LVCMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 1.8V Current - Supply (Max): 4.1mA Height - Seated (Max): 0.031" (0.80mm) Part Status: Active Frequency: 50 MHz Base Resonator: MEMS |
auf Bestellung 13618 Stücke: Lieferzeit 10-14 Tag (e) |
|
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SIT1602BI-23-18N-50.000000 | SiTime |
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS Packaging: Strip Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: HCMOS, LVCMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V Current - Supply (Max): 4.1mA Height - Seated (Max): 0.031" (0.80mm) Part Status: Active Frequency: 50 MHz Base Resonator: MEMS |
auf Bestellung 13618 Stücke: Lieferzeit 10-14 Tag (e) |
|
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SIT1602BI-33-18N-50.000000 | SiTime |
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS Packaging: Strip Package / Case: 4-SMD, No Lead Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Mounting Type: Surface Mount Output: HCMOS, LVCMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V Current - Supply (Max): 4.1mA Height - Seated (Max): 0.031" (0.80mm) Part Status: Active Frequency: 50 MHz Base Resonator: MEMS |
auf Bestellung 25292 Stücke: Lieferzeit 10-14 Tag (e) |
|
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SIT1602BI-72-18N-50.000000 | SiTime |
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS Packaging: Strip Package / Case: 4-SMD, No Lead Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm) Mounting Type: Surface Mount Output: HCMOS, LVCMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 1.8V Current - Supply (Max): 4.1mA Height - Seated (Max): 0.031" (0.80mm) Part Status: Active Frequency: 50 MHz Base Resonator: MEMS |
auf Bestellung 21923 Stücke: Lieferzeit 10-14 Tag (e) |
|
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SIT1602BI-73-18N-50.000000 | SiTime |
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS Packaging: Strip Package / Case: 4-SMD, No Lead Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm) Mounting Type: Surface Mount Output: HCMOS, LVCMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V Current - Supply (Max): 4.1mA Height - Seated (Max): 0.031" (0.80mm) Part Status: Active Frequency: 50 MHz Base Resonator: MEMS |
auf Bestellung 21923 Stücke: Lieferzeit 10-14 Tag (e) |
|
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SIT1602BI-83-18N-50.000000 | SiTime |
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS Packaging: Strip Package / Case: 4-SMD, No Lead Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Mounting Type: Surface Mount Output: HCMOS, LVCMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V Current - Supply (Max): 4.1mA Height - Seated (Max): 0.039" (1.00mm) Part Status: Active Frequency: 50 MHz Base Resonator: MEMS |
auf Bestellung 30141 Stücke: Lieferzeit 10-14 Tag (e) |
|
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WMJ18N50D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 271W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 18A Pulsed drain current: 72A Power dissipation: 271W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 320 Stücke: Lieferzeit 14-21 Tag (e) |
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WMJ18N50D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 271W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 18A Pulsed drain current: 72A Power dissipation: 271W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 320 Stücke: Lieferzeit 7-14 Tag (e) |
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AV218N50 | FAIRCHILD | 09+ |
auf Bestellung 107 Stücke: Lieferzeit 21-28 Tag (e) |
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FDA18N50 | ON Semiconductor |
auf Bestellung 56250 Stücke: Lieferzeit 21-28 Tag (e) |
SIHF18N50D-E3 Produktcode: 188008 |
Hersteller: Vishay
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 550 V
Idd,A: 18 A
Rds(on), Ohm: 0,28 Ohm
Ciss, pF/Qg, nC: 1500/38
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 550 V
Idd,A: 18 A
Rds(on), Ohm: 0,28 Ohm
Ciss, pF/Qg, nC: 1500/38
JHGF: THT
erwartet:
10 Stück
10 Stück - erwartet
BXP18N50F |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 229 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
36+ | 2.03 EUR |
44+ | 1.63 EUR |
75+ | 0.96 EUR |
79+ | 0.92 EUR |
BXP18N50F |
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 229 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
36+ | 2.03 EUR |
44+ | 1.63 EUR |
75+ | 0.96 EUR |
79+ | 0.92 EUR |
1000+ | 0.87 EUR |
CNX718N50005T |
Hersteller: Visual Communications Company - VCC
Description: LED 18MM GREEN 5V TAB PNL MNT
Packaging: Bulk
Voltage: 5V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Quick Connect - 0.187" (4.7mm)
Lens Color: Green
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Clear
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
Description: LED 18MM GREEN 5V TAB PNL MNT
Packaging: Bulk
Voltage: 5V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Quick Connect - 0.187" (4.7mm)
Lens Color: Green
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Clear
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 30.55 EUR |
10+ | 23.4 EUR |
100+ | 19.7 EUR |
CNX718N50005T |
Hersteller: VCC
LED Panel Mount Indicators PANEL MNT INDICATOR 18MM GRN 5V TAB
LED Panel Mount Indicators PANEL MNT INDICATOR 18MM GRN 5V TAB
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 36.22 EUR |
10+ | 28.37 EUR |
50+ | 26.49 EUR |
100+ | 24.78 EUR |
200+ | 23.92 EUR |
500+ | 22.72 EUR |
1000+ | 22.02 EUR |
CNX718N50005W |
Hersteller: Visual Communications Company - VCC
Description: LED 18MM GREEN 5V WIRE PNL MNT
Packaging: Bulk
Voltage: 5V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Green
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Clear
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
Description: LED 18MM GREEN 5V WIRE PNL MNT
Packaging: Bulk
Voltage: 5V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Green
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Clear
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 35.01 EUR |
10+ | 27.4 EUR |
CNX718N500120T |
Hersteller: Visual Communications Company - VCC
Description: LED 18MM GREEN 120V TAB PNL MNT
Packaging: Bulk
Voltage: 120V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Quick Connect - 0.187" (4.7mm)
Lens Color: Green
Ratings: AC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Clear
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
Description: LED 18MM GREEN 120V TAB PNL MNT
Packaging: Bulk
Voltage: 120V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Quick Connect - 0.187" (4.7mm)
Lens Color: Green
Ratings: AC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Clear
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 35.01 EUR |
10+ | 27.4 EUR |
CNX718N500120T |
Hersteller: VCC
LED Panel Mount Indicators PANEL MNT INDICATOR 18MM GRN 120V TAB
LED Panel Mount Indicators PANEL MNT INDICATOR 18MM GRN 120V TAB
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 35.6 EUR |
10+ | 28.39 EUR |
50+ | 27.32 EUR |
100+ | 24.66 EUR |
200+ | 24.57 EUR |
500+ | 22.72 EUR |
CNX718N500120W |
Hersteller: Visual Communications Company - VCC
Description: LED 18MM GREEN 120V WIRE PNL MNT
Packaging: Bulk
Voltage: 120V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Green
Ratings: AC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Clear
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
Description: LED 18MM GREEN 120V WIRE PNL MNT
Packaging: Bulk
Voltage: 120V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Green
Ratings: AC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Clear
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 35.01 EUR |
10+ | 27.4 EUR |
CNX718N50012T |
Hersteller: VCC
LED Panel Mount Indicators PANEL MNT INDICATOR 18MM GRN 12V TAB
LED Panel Mount Indicators PANEL MNT INDICATOR 18MM GRN 12V TAB
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 36.22 EUR |
10+ | 28.39 EUR |
50+ | 25.98 EUR |
100+ | 24.76 EUR |
200+ | 24.5 EUR |
500+ | 22.72 EUR |
CNX718N50012T |
Hersteller: Visual Communications Company - VCC
Description: LED 18MM GREEN 12V TAB PNL MNT
Packaging: Bulk
Voltage: 12V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Quick Connect - 0.187" (4.7mm)
Lens Color: Green
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Clear
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
Description: LED 18MM GREEN 12V TAB PNL MNT
Packaging: Bulk
Voltage: 12V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Quick Connect - 0.187" (4.7mm)
Lens Color: Green
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Clear
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 35.01 EUR |
10+ | 27.4 EUR |
100+ | 23.94 EUR |
CNX718N50012W |
Hersteller: Visual Communications Company - VCC
Description: LED 18MM GREEN 12V WIRE PNL MNT
Packaging: Bulk
Voltage: 12V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Green
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Clear
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
Description: LED 18MM GREEN 12V WIRE PNL MNT
Packaging: Bulk
Voltage: 12V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Green
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Clear
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 30.55 EUR |
10+ | 23.4 EUR |
100+ | 19.7 EUR |
CNX718N50028T |
Hersteller: VCC
LED Panel Mount Indicators PANEL MNT INDICATOR 18MM GRN 28V TAB
LED Panel Mount Indicators PANEL MNT INDICATOR 18MM GRN 28V TAB
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 25.64 EUR |
10+ | 22.12 EUR |
50+ | 22.02 EUR |
CNX718N50028W |
Hersteller: Visual Communications Company - VCC
Description: LED 18MM GREEN 28V WIRE PNL MNT
Packaging: Bulk
Voltage: 28V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Green
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Clear
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
Description: LED 18MM GREEN 28V WIRE PNL MNT
Packaging: Bulk
Voltage: 28V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Green
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Clear
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 179 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 35.01 EUR |
10+ | 27.4 EUR |
100+ | 23.94 EUR |
FDA18N50 |
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9.5A, 10V
Power Dissipation (Max): 239W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9.5A, 10V
Power Dissipation (Max): 239W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
auf Bestellung 1564 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
169+ | 2.81 EUR |
FDP18N50 |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 3.42 EUR |
24+ | 3.09 EUR |
31+ | 2.36 EUR |
33+ | 2.23 EUR |
FDP18N50 |
Hersteller: ON-Semicoductor
Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 235W; -55°C ~ 150°C; FDP18N50 TFDP18n50
Anzahl je Verpackung: 5 Stücke
Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 235W; -55°C ~ 150°C; FDP18N50 TFDP18n50
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 6.62 EUR |
FDP18N50 |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 3.42 EUR |
24+ | 3.09 EUR |
31+ | 2.36 EUR |
33+ | 2.23 EUR |
250+ | 2.14 EUR |
FDP18N50 |
Hersteller: onsemi / Fairchild
MOSFETs 500V N-Channel PowerTrench MOSFET
MOSFETs 500V N-Channel PowerTrench MOSFET
auf Bestellung 5410 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 5.44 EUR |
10+ | 3.98 EUR |
50+ | 3.41 EUR |
100+ | 2.69 EUR |
500+ | 2.52 EUR |
1000+ | 2.16 EUR |
5000+ | 2.15 EUR |
FDP18N50 |
Hersteller: onsemi
Description: MOSFET N-CH 500V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
Description: MOSFET N-CH 500V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
auf Bestellung 364 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.81 EUR |
50+ | 3.57 EUR |
100+ | 2.67 EUR |
FDPF18N50 |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.89 EUR |
21+ | 3.49 EUR |
27+ | 2.69 EUR |
29+ | 2.55 EUR |
FDPF18N50 |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 116 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.89 EUR |
21+ | 3.49 EUR |
27+ | 2.69 EUR |
29+ | 2.55 EUR |
FDPF18N50 |
Hersteller: ON-Semicoductor
Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 38,5W; -55°C ~ 150°C; FDPF18N50 TFDPF18n50
Anzahl je Verpackung: 3 Stücke
Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 38,5W; -55°C ~ 150°C; FDPF18N50 TFDPF18n50
Anzahl je Verpackung: 3 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 8.52 EUR |
FDPF18N50 |
Hersteller: onsemi / Fairchild
MOSFETs 500V N-CH MOSFET
MOSFETs 500V N-CH MOSFET
auf Bestellung 1902 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.77 EUR |
10+ | 4 EUR |
25+ | 3.77 EUR |
100+ | 3.22 EUR |
250+ | 3.04 EUR |
500+ | 2.87 EUR |
1000+ | 2.55 EUR |
FDPF18N50 |
Hersteller: onsemi
Description: MOSFET N-CH 500V 18A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
Description: MOSFET N-CH 500V 18A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
auf Bestellung 11300 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.14 EUR |
50+ | 3.12 EUR |
100+ | 2.83 EUR |
500+ | 2.32 EUR |
1000+ | 2.15 EUR |
FDPF18N50T |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 4.6 EUR |
25+ | 2.97 EUR |
26+ | 2.82 EUR |
50+ | 2.72 EUR |
FDPF18N50T |
Hersteller: onsemi / Fairchild
MOSFETs 500V N-Channel PowerTrench MOSFET
MOSFETs 500V N-Channel PowerTrench MOSFET
auf Bestellung 830 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 6.39 EUR |
10+ | 4.61 EUR |
25+ | 3.82 EUR |
100+ | 3.08 EUR |
500+ | 2.82 EUR |
FDPF18N50T |
Hersteller: onsemi
Description: MOSFET N-CH 500V 18A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
Description: MOSFET N-CH 500V 18A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
auf Bestellung 991 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.06 EUR |
50+ | 4.06 EUR |
100+ | 3.32 EUR |
500+ | 2.74 EUR |
FQA18N50V2 |
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 20A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 10A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 10A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
98+ | 4.87 EUR |
FQH18N50V2 |
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 10A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 10A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 4058 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
100+ | 4.79 EUR |
FQP18N50V2 |
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Description: MOSFET N-CH 500V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 532 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
69+ | 6.91 EUR |
FQPF18N50V2SDTU |
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 4950 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
197+ | 2.42 EUR |
G18N50T |
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 500V 18A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 9A, 10V
Power Dissipation (Max): 189.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 250 V
Description: MOSFET N-CH 500V 18A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 9A, 10V
Power Dissipation (Max): 189.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 250 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.63 EUR |
10+ | 3.01 EUR |
IRFB18N50KPBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 220W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 220W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 3.22 EUR |
25+ | 2.9 EUR |
31+ | 2.33 EUR |
33+ | 2.2 EUR |
250+ | 2.14 EUR |
IRFB18N50KPBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 220W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 220W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 276 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 3.22 EUR |
25+ | 2.9 EUR |
31+ | 2.33 EUR |
33+ | 2.2 EUR |
250+ | 2.14 EUR |
IRFB18N50KPBF |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
Description: MOSFET N-CH 500V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
auf Bestellung 885 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.24 EUR |
50+ | 4.87 EUR |
100+ | 4.45 EUR |
500+ | 3.81 EUR |
IRFB18N50KPBF |
Hersteller: Vishay Semiconductors
MOSFETs RECOMMENDED ALT SIHP18N50C-E3
MOSFETs RECOMMENDED ALT SIHP18N50C-E3
auf Bestellung 903 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 7.6 EUR |
10+ | 6.39 EUR |
25+ | 5.33 EUR |
100+ | 4.79 EUR |
250+ | 4.75 EUR |
500+ | 4.42 EUR |
1000+ | 3.91 EUR |
SIHF18N50D-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 18A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 500V 18A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 419 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.72 EUR |
10+ | 3.75 EUR |
100+ | 2.62 EUR |
SIHP18N50C-E3 |
Hersteller: Vishay Semiconductors
MOSFETs 500V Vds 30V Vgs TO-220AB
MOSFETs 500V Vds 30V Vgs TO-220AB
auf Bestellung 6854 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.49 EUR |
10+ | 3.63 EUR |
100+ | 2.97 EUR |
250+ | 2.92 EUR |
500+ | 2.52 EUR |
1000+ | 2.18 EUR |
2000+ | 2.16 EUR |
SIHP18N50C-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
Description: MOSFET N-CH 500V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
auf Bestellung 532 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.58 EUR |
50+ | 2.82 EUR |
100+ | 2.55 EUR |
500+ | 2.15 EUR |
SIT1602BC-12-18N-50.000000 |
Hersteller: SiTime
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
auf Bestellung 476353 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.18 EUR |
10+ | 2.09 EUR |
50+ | 2.04 EUR |
100+ | 1.75 EUR |
500+ | 1.7 EUR |
1000+ | 1.43 EUR |
2500+ | 1.36 EUR |
5000+ | 1.31 EUR |
10000+ | 1.26 EUR |
SIT1602BC-13-18N-50.000000 |
Hersteller: SiTime
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
auf Bestellung 476353 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 1.99 EUR |
11+ | 1.76 EUR |
50+ | 1.64 EUR |
100+ | 1.45 EUR |
500+ | 1.37 EUR |
1000+ | 1.15 EUR |
2500+ | 1.11 EUR |
5000+ | 1.07 EUR |
10000+ | 1.03 EUR |
SIT1602BC-22-18N-50.000000 |
Hersteller: SiTime
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
auf Bestellung 13618 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.18 EUR |
10+ | 2.09 EUR |
50+ | 2.04 EUR |
100+ | 1.75 EUR |
500+ | 1.7 EUR |
1000+ | 1.43 EUR |
2500+ | 1.36 EUR |
5000+ | 1.31 EUR |
10000+ | 1.26 EUR |
SIT1602BC-23-18N-50.000000 |
Hersteller: SiTime
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
auf Bestellung 13618 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 1.99 EUR |
11+ | 1.75 EUR |
50+ | 1.64 EUR |
100+ | 1.45 EUR |
500+ | 1.37 EUR |
1000+ | 1.14 EUR |
2500+ | 1.11 EUR |
5000+ | 1.07 EUR |
10000+ | 1.03 EUR |
SIT1602BC-33-18N-50.000000 |
Hersteller: SiTime
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
auf Bestellung 25292 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.09 EUR |
10+ | 1.8 EUR |
50+ | 1.62 EUR |
100+ | 1.55 EUR |
500+ | 1.4 EUR |
1000+ | 1.34 EUR |
2500+ | 1.27 EUR |
5000+ | 1.21 EUR |
10000+ | 1.16 EUR |
SIT1602BC-72-18N-50.000000 |
Hersteller: SiTime
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
auf Bestellung 21923 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.18 EUR |
10+ | 2.09 EUR |
50+ | 2.04 EUR |
100+ | 1.75 EUR |
500+ | 1.7 EUR |
1000+ | 1.43 EUR |
2500+ | 1.36 EUR |
5000+ | 1.31 EUR |
10000+ | 1.26 EUR |
SIT1602BC-73-18N-50.000000 |
Hersteller: SiTime
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
auf Bestellung 21923 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 1.99 EUR |
11+ | 1.76 EUR |
50+ | 1.64 EUR |
100+ | 1.45 EUR |
500+ | 1.37 EUR |
1000+ | 1.15 EUR |
2500+ | 1.11 EUR |
5000+ | 1.07 EUR |
10000+ | 1.03 EUR |
SIT1602BC-83-18N-50.000000 |
Hersteller: SiTime
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
auf Bestellung 30141 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.83 EUR |
11+ | 1.75 EUR |
50+ | 1.71 EUR |
100+ | 1.46 EUR |
500+ | 1.42 EUR |
1000+ | 1.2 EUR |
2500+ | 1.14 EUR |
5000+ | 1.1 EUR |
10000+ | 1.06 EUR |
SIT1602BI-12-18N-50.000000 |
Hersteller: SiTime
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
auf Bestellung 476353 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.24 EUR |
10+ | 2.13 EUR |
50+ | 2.08 EUR |
100+ | 1.78 EUR |
500+ | 1.73 EUR |
1000+ | 1.46 EUR |
2500+ | 1.39 EUR |
5000+ | 1.34 EUR |
10000+ | 1.29 EUR |
SIT1602BI-13-18N-50.000000 |
Hersteller: SiTime
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
auf Bestellung 476353 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.04 EUR |
10+ | 1.8 EUR |
50+ | 1.68 EUR |
100+ | 1.49 EUR |
500+ | 1.41 EUR |
1000+ | 1.17 EUR |
2500+ | 1.14 EUR |
5000+ | 1.1 EUR |
10000+ | 1.06 EUR |
SIT1602BI-22-18N-50.000000 |
Hersteller: SiTime
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
auf Bestellung 13618 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.24 EUR |
10+ | 2.13 EUR |
50+ | 2.08 EUR |
100+ | 1.78 EUR |
500+ | 1.73 EUR |
1000+ | 1.46 EUR |
2500+ | 1.39 EUR |
5000+ | 1.34 EUR |
10000+ | 1.29 EUR |
SIT1602BI-23-18N-50.000000 |
Hersteller: SiTime
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
auf Bestellung 13618 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.04 EUR |
10+ | 1.8 EUR |
50+ | 1.68 EUR |
100+ | 1.49 EUR |
500+ | 1.41 EUR |
1000+ | 1.17 EUR |
2500+ | 1.13 EUR |
5000+ | 1.1 EUR |
10000+ | 1.06 EUR |
SIT1602BI-33-18N-50.000000 |
Hersteller: SiTime
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
auf Bestellung 25292 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.78 EUR |
50+ | 1.74 EUR |
100+ | 1.49 EUR |
500+ | 1.45 EUR |
1000+ | 1.22 EUR |
2500+ | 1.16 EUR |
5000+ | 1.12 EUR |
10000+ | 1.08 EUR |
SIT1602BI-72-18N-50.000000 |
Hersteller: SiTime
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
auf Bestellung 21923 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.24 EUR |
10+ | 2.13 EUR |
50+ | 2.08 EUR |
100+ | 1.78 EUR |
500+ | 1.73 EUR |
1000+ | 1.46 EUR |
2500+ | 1.39 EUR |
5000+ | 1.34 EUR |
10000+ | 1.29 EUR |
SIT1602BI-73-18N-50.000000 |
Hersteller: SiTime
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
auf Bestellung 21923 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.04 EUR |
10+ | 1.8 EUR |
50+ | 1.68 EUR |
100+ | 1.49 EUR |
500+ | 1.41 EUR |
1000+ | 1.17 EUR |
2500+ | 1.14 EUR |
5000+ | 1.1 EUR |
10000+ | 1.06 EUR |
SIT1602BI-83-18N-50.000000 |
Hersteller: SiTime
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 50.0000MHZ H/LV-CMOS
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: HCMOS, LVCMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4.1mA
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Frequency: 50 MHz
Base Resonator: MEMS
auf Bestellung 30141 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.79 EUR |
50+ | 1.75 EUR |
100+ | 1.5 EUR |
500+ | 1.46 EUR |
1000+ | 1.23 EUR |
2500+ | 1.16 EUR |
5000+ | 1.12 EUR |
10000+ | 1.08 EUR |
WMJ18N50D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 271W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 271W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 271W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 271W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 320 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 1.8 EUR |
50+ | 1.44 EUR |
66+ | 1.09 EUR |
90+ | 0.8 EUR |
95+ | 0.76 EUR |
WMJ18N50D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 271W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 271W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 271W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 271W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 320 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 1.8 EUR |
50+ | 1.44 EUR |
66+ | 1.09 EUR |
90+ | 0.8 EUR |
95+ | 0.76 EUR |
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