ZXMP3F37N8TA
Hersteller: auf Bestellung 990 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details ZXMP3F37N8TA
Description: MOSFET P-CH 30V 6.4A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V, Power Dissipation (Max): 1.56W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 31.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1678 pF @ 15 V.
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ZXMP3F37N8TA | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 6.4A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1678 pF @ 15 V |
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