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ZXMP3F37DN8TA


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Technische Details ZXMP3F37DN8TA

Description: MOSFET 2P-CH 30V 5.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.81W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.7A, Input Capacitance (Ciss) (Max) @ Vds: 1678pF @ 15V, Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 31.6nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO.

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ZXMP3F37DN8TA ZXMP3F37DN8TA Hersteller : Diodes Inc 375zxmp3f37dn8.pdf Trans MOSFET P-CH 30V 5.7A 8-Pin SO T/R
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ZXMP3F37DN8TA ZXMP3F37DN8TA Hersteller : Diodes Incorporated ZXMP3F37DN8.pdf Description: MOSFET 2P-CH 30V 5.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.81W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Input Capacitance (Ciss) (Max) @ Vds: 1678pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar