ZXMC10A816N8TA
Hersteller:
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details ZXMC10A816N8TA
Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V, Type of transistor: N/P-MOSFET, Polarisation: unipolar, Kind of transistor: complementary pair, Drain-source voltage: 100/-100V, Drain current: 2.2/-2.1A, Pulsed drain current: 9.4A, Power dissipation: 2.4W, Case: SO8, Gate-source voltage: ±20V, On-state resistance: 0.23/0.235Ω, Mounting: SMD, Gate charge: 9.2nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote ZXMC10A816N8TA
Foto | Bezeichnung | Hersteller | Beschreibung |
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ZXMC10A816N8TA | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 100/-100V Drain current: 2.2/-2.1A Pulsed drain current: 9.4A Power dissipation: 2.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.23/0.235Ω Mounting: SMD Gate charge: 9.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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![]() |
ZXMC10A816N8TA | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 100/-100V Drain current: 2.2/-2.1A Pulsed drain current: 9.4A Power dissipation: 2.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.23/0.235Ω Mounting: SMD Gate charge: 9.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |