Suchergebnisse für "siss80dn" : 11
Art der Ansicht :
Mindestbestellmenge: 2
Mindestbestellmenge: 3000
Mindestbestellmenge: 10
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SISS80DN-T1-GE3 | Vishay Semiconductors |
 MOSFETs N-Channel 20V (D-S) |
auf Bestellung 4565 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS80DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 58.3A/210A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58.3A (Ta), 210A (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): +12V, -8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS80DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 58.3A/210A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58.3A (Ta), 210A (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): +12V, -8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V |
auf Bestellung 11801 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS80DN-T1-GE3 | Vishay |
Trans MOSFET N-CH 20V 58.3A 8-Pin PowerPAK 1212-S EP T/R |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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| SISS80DN | Vishay | Array |
Produkt ist nicht verfügbar |
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SISS80DN | Vishay |
Trans MOSFET N-CH 20V 58.3A 8-Pin PowerPAK 1212-S EP T/R |
Produkt ist nicht verfügbar |
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| SISS80DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 169A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 169A Pulsed drain current: 300A Power dissipation: 42W Case: PowerPAK® 1212-8 Gate-source voltage: -8...12V On-state resistance: 3mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SISS80DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 169A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 169A Pulsed drain current: 300A Power dissipation: 42W Case: PowerPAK® 1212-8 Gate-source voltage: -8...12V On-state resistance: 3mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS80DN-T1-GE3 | Vishay |
Trans MOSFET N-CH 20V 58.3A 8-Pin PowerPAK 1212-S EP T/R |
Produkt ist nicht verfügbar |
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SISS80DN-T1-GE3 | Vishay |
Trans MOSFET N-CH 20V 58.3A 8-Pin PowerPAK 1212-S EP T/R |
Produkt ist nicht verfügbar |
| SISS80DN-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs N-Channel 20V (D-S)
MOSFETs N-Channel 20V (D-S)
auf Bestellung 4565 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.85 EUR |
| 10+ | 1.53 EUR |
| 100+ | 1.23 EUR |
| SISS80DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 58.3A/210A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.3A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V
Description: MOSFET N-CH 20V 58.3A/210A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.3A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.1 EUR |
| SISS80DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 58.3A/210A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.3A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V
Description: MOSFET N-CH 20V 58.3A/210A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.3A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V
auf Bestellung 11801 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 1.85 EUR |
| 12+ | 1.54 EUR |
| 100+ | 1.22 EUR |
| 500+ | 1.1 EUR |
| SISS80DN-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 20V 58.3A 8-Pin PowerPAK 1212-S EP T/R
Trans MOSFET N-CH 20V 58.3A 8-Pin PowerPAK 1212-S EP T/R
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)| SISS80DN |
|
Hersteller: Vishay
Trans MOSFET N-CH 20V 58.3A 8-Pin PowerPAK 1212-S EP T/R
Trans MOSFET N-CH 20V 58.3A 8-Pin PowerPAK 1212-S EP T/R
Produkt ist nicht verfügbar
| SISS80DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 169A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 169A
Pulsed drain current: 300A
Power dissipation: 42W
Case: PowerPAK® 1212-8
Gate-source voltage: -8...12V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 169A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 169A
Pulsed drain current: 300A
Power dissipation: 42W
Case: PowerPAK® 1212-8
Gate-source voltage: -8...12V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SISS80DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 169A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 169A
Pulsed drain current: 300A
Power dissipation: 42W
Case: PowerPAK® 1212-8
Gate-source voltage: -8...12V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 169A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 169A
Pulsed drain current: 300A
Power dissipation: 42W
Case: PowerPAK® 1212-8
Gate-source voltage: -8...12V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SISS80DN-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 20V 58.3A 8-Pin PowerPAK 1212-S EP T/R
Trans MOSFET N-CH 20V 58.3A 8-Pin PowerPAK 1212-S EP T/R
Produkt ist nicht verfügbar
| SISS80DN-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 20V 58.3A 8-Pin PowerPAK 1212-S EP T/R
Trans MOSFET N-CH 20V 58.3A 8-Pin PowerPAK 1212-S EP T/R
Produkt ist nicht verfügbar