SISS80DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 20V 58.3A/210A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.3A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.1 EUR |
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Technische Details SISS80DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 20V 58.3A/210A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58.3A (Ta), 210A (Tc), Rds On (Max) @ Id, Vgs: 0.92mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): +12V, -8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V.
Weitere Produktangebote SISS80DN-T1-GE3 nach Preis ab 1.1 EUR bis 1.85 EUR
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SISS80DN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET N-Channel 20V (D-S) |
auf Bestellung 4611 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS80DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 58.3A/210A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58.3A (Ta), 210A (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): +12V, -8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V |
auf Bestellung 11801 Stücke: Lieferzeit 10-14 Tag (e) |
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| SISS80DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 169A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 169A Pulsed drain current: 300A Power dissipation: 42W Case: PowerPAK® 1212-8 Gate-source voltage: -8...12V On-state resistance: 3mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS80DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 169A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 169A Pulsed drain current: 300A Power dissipation: 42W Case: PowerPAK® 1212-8 Gate-source voltage: -8...12V On-state resistance: 3mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |