![SI4800BDY-T1-E3 SI4800BDY-T1-E3](https://ce8dc832c.cloudimg.io/v7/_cdn_/A9/A5/40/00/0/285338_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=f0bee21ffea27f905e10bd7bef271cd4e2b785fe)
SI4800BDY-T1-E3 VISHAY
![SI4800BDY-E3.pdf](/images/adobe-acrobat.png)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Gate charge: 13nC
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±25V
Type of transistor: N-MOSFET
Power dissipation: 2.5W
On-state resistance: 30mΩ
Drain current: 7A
Drain-source voltage: 30V
auf Bestellung 3027 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
146+ | 0.49 EUR |
157+ | 0.46 EUR |
195+ | 0.37 EUR |
206+ | 0.35 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4800BDY-T1-E3 VISHAY
Description: MOSFET N-CH 30V 6.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V.
Weitere Produktangebote SI4800BDY-T1-E3 nach Preis ab 0.35 EUR bis 1.44 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
SI4800BDY-T1-E3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8 Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 13nC Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±25V Type of transistor: N-MOSFET Power dissipation: 2.5W On-state resistance: 30mΩ Drain current: 7A Drain-source voltage: 30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3027 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
SI4800BDY-T1-E3 | Hersteller : Vishay |
![]() |
auf Bestellung 850 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
SI4800BDY-T1-E3 | Hersteller : Vishay |
![]() |
auf Bestellung 850 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
SI4800BDY-T1-E3 | Hersteller : Vishay Semiconductors |
![]() |
auf Bestellung 6998 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SI4800BDY-T1-E3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V |
auf Bestellung 4449 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
SI4800BDY-T1-E3 | Hersteller : Siliconix |
![]() Anzahl je Verpackung: 15 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
SI4800BDYT1E3 | Hersteller : VISHAY |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||
![]() |
SI4800BDY-T1-E3 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
SI4800BDY-T1-E3 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
SI4800BDY-T1-E3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V |
Produkt ist nicht verfügbar |