SI4800BDY-T1-E3 VISHAY
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3027 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
146+ | 0.49 EUR |
157+ | 0.46 EUR |
195+ | 0.37 EUR |
207+ | 0.35 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4800BDY-T1-E3 VISHAY
Description: MOSFET N-CH 30V 6.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V.
Weitere Produktangebote SI4800BDY-T1-E3 nach Preis ab 0.35 EUR bis 1.43 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SI4800BDY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 30mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 3027 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
SI4800BDY-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
SI4800BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 6.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
SI4800BDY-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
SI4800BDY-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R |
auf Bestellung 850 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
SI4800BDY-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R |
auf Bestellung 850 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
SI4800BDY-T1-E3 | Hersteller : Vishay Semiconductors | MOSFETs 30V 9A 2.5W |
auf Bestellung 6974 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
SI4800BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 6.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V |
auf Bestellung 6848 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
SI4800BDY-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
SI4800BDY-T1-E3 | Hersteller : Siliconix |
N-MOSFET 6.5A 30V 1.3W 0.0185Ω SI4800BDY-e3 TSI4800bdy-e3 Anzahl je Verpackung: 15 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
SI4800BDYT1E3 | Hersteller : VISHAY |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||||
SI4800BDY-T1-E3 Produktcode: 52358 |
Verschiedene Bauteile > Verschiedene Bauteile 2 |
Produkt ist nicht verfügbar
|
|||||||||||||||||||
SI4800BDY-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |