BSS84PE6327
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auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details BSS84PE6327
Description: MOSFET P-CH 60V 170MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 170mA (Ta), Rds On (Max) @ Id, Vgs: 8Ohm @ 170mA, 10V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 2V @ 20µA, Supplier Device Package: PG-SOT23, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 25 V.
Weitere Produktangebote BSS84PE6327
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BSS84P E6327 | Hersteller : Infineon Technologies |
 Trans MOSFET P-CH 60V 0.17A Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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BSS84P-E6327 | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 60V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 25 V |
Produkt ist nicht verfügbar |