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BSS139-E6327


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Technische Details BSS139-E6327

Description: MOSFET N-CH 250V 100MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 14Ohm @ 0.1mA, 10V, FET Feature: Depletion Mode, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 1V @ 56µA, Supplier Device Package: PG-SOT23, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 25 V.

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BSS139 E6327 BSS139 E6327 Hersteller : Infineon Technologies bss139_rev1.8.pdffolderiddb3a304325305e6d012596c6ca7b290afileiddb3a304333b8a7ca0133eed3136c61f2.pdf Trans MOSFET N-CH 250V 0.1A Automotive 3-Pin SOT-23 T/R
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BSS139E6327 BSS139E6327 Hersteller : Infineon Technologies bss139_rev1.8.pdffolderiddb3a304325305e6d012596c6ca7b290afileiddb3a304333b8a7ca0133eed3136c61f2.pdf Trans MOSFET N-CH 250V 0.1A Automotive 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
BSS139 E6327 BSS139 E6327 Hersteller : Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 0.1mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 25 V
Produkt ist nicht verfügbar
BSS139 E6327 Hersteller : Infineon Technologies fundamentals-of-power-semiconductors Array
Produkt ist nicht verfügbar