1N5408-G Comchip Technology
Hersteller: Comchip Technology
Description: DIODE GEN PURP 1KV 3A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27 (DO-201AD)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 3A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27 (DO-201AD)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 32400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1200+ | 0.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 1N5408-G Comchip Technology
Description: TAIWAN SEMICONDUCTOR - 1N5408G - Diode mit Standard-Erholzeit, 1 kV, 3 A, Einfach, 1 V, 125 A, tariffCode: 85411000, Bauform - Diode: DO-201AD, Durchlassstoßstrom: 125A, rohsCompliant: YES, hazardous: false, rohsPhthalatesCompliant: YES, Diodenkonfiguration: Einfach, Qualifikation: -, Durchlassspannung, max.: 1V, Sperrverzögerungszeit: -, usEccn: EAR99, Durchschnittlicher Durchlassstrom: 3A, euEccn: NLR, Wiederkehrende Spitzensperrspannung: 1kV, Anzahl der Pins: 2Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (17-Jan-2023).
Weitere Produktangebote 1N5408-G nach Preis ab 0.14 EUR bis 0.72 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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1N5408G | Hersteller : SMC Diode Solutions |
Description: DIODE GEN PURP 1KV 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5408G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 6250 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5408G | Hersteller : EIC | Diode Si 1KV 3A 2-Pin DO-201AD |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408G | Hersteller : ON Semiconductor | Diode Switching 1KV 3A 2-Pin DO-201AD Box |
auf Bestellung 1192 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408-G | Hersteller : Comchip Technology | Small Signal Switching Diodes VR=1000V, IO=3A |
auf Bestellung 5633 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5408-G | Hersteller : Comchip Technology |
Description: DIODE GEN PURP 1KV 3A DO27 Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-27 (DO-201AD) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 20355 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5408-G | Hersteller : Comchip Technology | Diode 1KV 3A 2-Pin DO-201AD Ammo |
auf Bestellung 16800 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408G | Hersteller : ON Semiconductor | Diode Switching 1KV 3A 2-Pin DO-201AD Box |
auf Bestellung 1192 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408G | Hersteller : Taiwan Semiconductor | Rectifiers 3A, 1000V, Standard Recovery Rectifier |
auf Bestellung 5835 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5408G | Hersteller : onsemi |
Description: DIODE GEN PURP 1KV 3A AXIAL Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 15737 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5408G | Hersteller : ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 1kV; 3A; Ifsm: 200A; DO27; Ufmax: 1V; Ir: 50uA Mounting: THT Case: DO27 Max. off-state voltage: 1kV Max. forward voltage: 1V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Leakage current: 50µA Type of diode: switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 114 Stücke: Lieferzeit 7-14 Tag (e) |
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1N5408G | Hersteller : ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 1kV; 3A; Ifsm: 200A; DO27; Ufmax: 1V; Ir: 50uA Mounting: THT Case: DO27 Max. off-state voltage: 1kV Max. forward voltage: 1V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Leakage current: 50µA Type of diode: switching |
auf Bestellung 114 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408G | Hersteller : onsemi | Rectifiers 1000V 3A Standard |
auf Bestellung 41143 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5408G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 46 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5408G | Hersteller : SMC Diode Solutions |
Description: DIODE GEN PURP 1KV 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5408G | Hersteller : ONSEMI |
Description: ONSEMI - 1N5408G - Diode mit Standard-Erholzeit, 1 kV, 3 A, Einfach, 1 V, 200 A tariffCode: 85411000 Bauform - Diode: Axial bedrahtet Durchlassstoßstrom: 200A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 1V Sperrverzögerungszeit: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 3A euEccn: NLR Wiederkehrende Spitzensperrspannung: 1kV Anzahl der Pins: 2Pin(s) Produktpalette: 1N5408 productTraceability: No Betriebstemperatur, max.: 150°C SVHC: Lead (23-Jan-2024) |
auf Bestellung 9896 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408G | Hersteller : TAIWAN SEMICONDUCTOR |
Description: TAIWAN SEMICONDUCTOR - 1N5408G - Diode mit Standard-Erholzeit, 1 kV, 3 A, Einfach, 1 V, 125 A tariffCode: 85411000 Bauform - Diode: DO-201AD Durchlassstoßstrom: 125A rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 1V Sperrverzögerungszeit: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 3A euEccn: NLR Wiederkehrende Spitzensperrspannung: 1kV Anzahl der Pins: 2Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 8062 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408G | Hersteller : ON Semiconductor | Rectifier Diode Switching 1KV 3A 2-Pin DO-201AD Box |
Produkt ist nicht verfügbar |
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1N5408G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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1N5408-G | Hersteller : Comchip Technology | Diode 1KV 3A 2-Pin DO-201AD Ammo |
Produkt ist nicht verfügbar |
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1N5408G | Hersteller : YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Mounting: THT Features of semiconductor devices: glass passivated Case: DO27 Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Kind of package: tape Type of diode: rectifying Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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1N5408G | Hersteller : Taiwan Semiconductor | Diode 1KV 3A 2-Pin DO-201AD |
Produkt ist nicht verfügbar |
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1N5408G | Hersteller : Taiwan Semiconductor | Diode 1KV 3A 2-Pin DO-201AD T/R |
Produkt ist nicht verfügbar |
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1N5408-G | Hersteller : Comchip Technology | Diode 1KV 3A 2-Pin DO-201AD Ammo |
Produkt ist nicht verfügbar |
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1N5408G | Hersteller : YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Mounting: THT Features of semiconductor devices: glass passivated Case: DO27 Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Kind of package: tape Type of diode: rectifying |
Produkt ist nicht verfügbar |