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NRVUD620CTG NRVUD620CTG onsemi murd620ct-d.pdf Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NRVUD620CTT4G NRVUD620CTT4G onsemi murd620ct-d.pdf Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
NSTJD1155LT1G onsemi Description: MOSFET 2P-CH 8V 1.3A SC88
Produkt ist nicht verfügbar
NSV1SS400T1G NSV1SS400T1G onsemi 1ss400t1-d.pdf Description: DIODE GEN PURP 100V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Qualification: AEC-Q101
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
9000+ 0.095 EUR
30000+ 0.093 EUR
75000+ 0.077 EUR
Mindestbestellmenge: 3000
NSV20200LT1G NSV20200LT1G onsemi nss20200l-d.pdf Description: TRANS PNP 20V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 460 mW
auf Bestellung 621000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.27 EUR
6000+ 0.26 EUR
9000+ 0.24 EUR
30000+ 0.23 EUR
Mindestbestellmenge: 3000
NSV40200LT1G NSV40200LT1G onsemi nss40200l-d.pdf Description: TRANS PNP 40V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 460 mW
Produkt ist nicht verfügbar
NSV40201LT1G NSV40201LT1G onsemi nss40201l-d.pdf Description: TRANS NPN 40V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 460 mW
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.21 EUR
6000+ 0.2 EUR
9000+ 0.18 EUR
Mindestbestellmenge: 3000
NSV60601MZ4T1G NSV60601MZ4T1G onsemi nss60601mz4-d.pdf Description: TRANS NPN 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
NSVBAS21HT1G NSVBAS21HT1G onsemi bas21ht1-d.pdf Description: DIODE GEN PURP 250V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.056 EUR
6000+ 0.052 EUR
9000+ 0.043 EUR
30000+ 0.042 EUR
Mindestbestellmenge: 3000
NSVBAS21HT3G NSVBAS21HT3G onsemi bas21ht1-d.pdf Description: DIODE GEN PURP 250V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NSVBAT54HT1G NSVBAT54HT1G onsemi bat54ht1-d.pdf Description: DIODE SCHOTTKY 30V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.068 EUR
6000+ 0.063 EUR
9000+ 0.052 EUR
30000+ 0.051 EUR
Mindestbestellmenge: 3000
NSVBAT54LT1G NSVBAT54LT1G onsemi bat54lt1-d.pdf Description: DIODE SCHOTTKY 30V 200MA SOT23-3
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+ 0.097 EUR
15000+ 0.082 EUR
Mindestbestellmenge: 3000
NSVBAT54SWT1G NSVBAT54SWT1G onsemi bat54swt1-d.pdf Description: DIODE ARR SCHOT 30V 200MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
6000+ 0.16 EUR
9000+ 0.14 EUR
Mindestbestellmenge: 3000
NSVBAT54WT1G NSVBAT54WT1G onsemi bat54wt1-d.pdf Description: DIODE SCHOTTKY 30V 200MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.083 EUR
Mindestbestellmenge: 3000
NSVBAV70TT1G NSVBAV70TT1G onsemi bav70tt1-d.pdf Description: DIODE ARRAY GP 100V 100MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SC-75, SOT-416
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.057 EUR
6000+ 0.053 EUR
9000+ 0.044 EUR
Mindestbestellmenge: 3000
NSVBC858BLT1G NSVBC858BLT1G onsemi bc856alt1-d.pdf Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.053 EUR
6000+ 0.05 EUR
9000+ 0.042 EUR
30000+ 0.039 EUR
Mindestbestellmenge: 3000
NSVD4001DR2G NSVD4001DR2G onsemi nud4001-d.pdf Description: IC LED DRVR LIN PWM 500MA 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Min): 3.6V
Voltage - Supply (Max): 30V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.65 EUR
5000+ 0.62 EUR
Mindestbestellmenge: 2500
NSVMMBTH10LT1G NSVMMBTH10LT1G onsemi mmbth10lt1-d.pdf Description: RF TRANS NPN 25V 650MHZ SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
auf Bestellung 147000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.2 EUR
6000+ 0.18 EUR
15000+ 0.17 EUR
30000+ 0.16 EUR
75000+ 0.15 EUR
Mindestbestellmenge: 3000
NSVMMUN2232LT1G NSVMMUN2232LT1G onsemi dtc143e-d.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.087 EUR
6000+ 0.081 EUR
9000+ 0.067 EUR
Mindestbestellmenge: 3000
NSVMUN2212T1G NSVMUN2212T1G onsemi dtc124e-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
NSVMUN5132T1G NSVMUN5132T1G onsemi dta143e-d.pdf Description: TRANS PREBIAS PNP 50V SC70-3
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
NSVR0230M2T5G NSVR0230M2T5G onsemi nsr0230-d.pdf Description: DIODE SCHOTTKY 30V 200MA SOD723
Packaging: Tape & Reel (TR)
Package / Case: SOD-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-723
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.15 EUR
16000+ 0.13 EUR
Mindestbestellmenge: 8000
NSVR0240V2T1G NSVR0240V2T1G onsemi nsr0240v2t1-d.pdf Description: DIODE SCHOTTKY 40V 250MA SOD523
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.15 EUR
Mindestbestellmenge: 3000
NSVR0320MW2T1G NSVR0320MW2T1G onsemi nsr0320mw2t1-d.pdf Description: DIODE SCHOTTKY 20V 1A SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 900 mA
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.18 EUR
6000+ 0.17 EUR
9000+ 0.15 EUR
Mindestbestellmenge: 3000
NSVRB521S30T1G NSVRB521S30T1G onsemi rb521s30t1-d.pdf Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Qualification: AEC-Q101
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
9000+ 0.093 EUR
30000+ 0.092 EUR
Mindestbestellmenge: 3000
NTBV45N06LT4G NTBV45N06LT4G onsemi Description: MOSFET N-CH 60V 45A D2PAK
Produkt ist nicht verfügbar
NTBV45N06T4G NTBV45N06T4G onsemi Description: MOSFET N-CH 60V 45A D2PAK
Produkt ist nicht verfügbar
NTBV75N06T4G NTBV75N06T4G onsemi Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Produkt ist nicht verfügbar
NTDV18N06LT4G NTDV18N06LT4G onsemi ntd18n06l-d.pdf Description: MOSFET N-CH 60V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 9A, 5V
Power Dissipation (Max): 2.1W (Ta), 55W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V
Produkt ist nicht verfügbar
NTDV20N06T4G NTDV20N06T4G onsemi ntd20n06-d.pdf Description: MOSFET N-CH 60V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 1.88W (Ta), 60W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V
Produkt ist nicht verfügbar
NTDV20P06LT4G NTDV20P06LT4G onsemi ntd20p06l-d.pdf Description: MOSFET P-CH 60V 15.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 5V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 25 V
Produkt ist nicht verfügbar
NTDV3055L104-1G NTDV3055L104-1G onsemi ntd3055l104-d.pdf Description: MOSFET N-CH 60V 12A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 104mOhm @ 6A, 5V
Power Dissipation (Max): 1.5W (Ta), 48W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
NTDV5804NT4G NTDV5804NT4G onsemi ntd5804n-d.pdf Description: MOSFET N-CH 40V 69A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Produkt ist nicht verfügbar
NTDV5805NT4G NTDV5805NT4G onsemi NTD5805N,NVD5805N.pdf Description: MOSFET N-CH 40V 51A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Produkt ist nicht verfügbar
NTDV6414ANT4G NTDV6414ANT4G onsemi Description: MOSFET N-CH 100V 32A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: DPAK-3
Produkt ist nicht verfügbar
NTMFS4927NCT3G NTMFS4927NCT3G onsemi ntmfs4927n-d.pdf Description: MOSFET N-CH 30V 7.9A/38A 5DFN
Produkt ist nicht verfügbar
NTMFS4935NCT1G NTMFS4935NCT1G onsemi ntmfs4935n-d.pdf Description: MOSFET N-CH 30V 13A/93A 5DFN
Produkt ist nicht verfügbar
NTMFS4935NCT3G NTMFS4935NCT3G onsemi ntmfs4935n-d.pdf Description: MOSFET N-CH 30V 13A/93A 5DFN
Produkt ist nicht verfügbar
NTRV4101PT1G NTRV4101PT1G onsemi ntr4101p-d.pdf Description: MOSFET P-CH 20V 1.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.42 EUR
6000+ 0.39 EUR
Mindestbestellmenge: 3000
NTSB20U100CT-1G NTSB20U100CT-1G onsemi ntst20u100ct-d.pdf Description: DIODE ARR SCHOTT 100V 10A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-262 (I2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Produkt ist nicht verfügbar
NTSB30U100CT-1G NTSB30U100CT-1G onsemi ntst30u100ct-d.pdf Description: DIODE ARRAY SCHOTTKY 100V I2PAK
Produkt ist nicht verfügbar
NTST20U100CTG NTST20U100CTG onsemi ntst20u100ct-d.pdf Description: DIODE ARRAY SCHOTTKY 100V TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.1 EUR
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NVB60N06T4G NVB60N06T4G onsemi Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NVD5865NLT4G NVD5865NLT4G onsemi NVD5865NL.pdf Description: MOSFET N-CH 60V 10A/46A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 19A, 10V
Power Dissipation (Max): 3.1W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NVF2955PT1G NVF2955PT1G onsemi ntf2955-d.pdf Description: MOSFET P CH 60V 1.7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 2.4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NVF3055-100T1G NVF3055-100T1G onsemi ntf3055-100-d.pdf Description: MOSFET N-CH 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NVF3055L108T3G NVF3055L108T3G onsemi ntf3055l108-d.pdf Description: MOSFET N-CH 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NVF6P02T3G NVF6P02T3G onsemi ntf6p02t3-d.pdf Description: MOSFET P-CH 20V 10A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V
Power Dissipation (Max): 8.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 124000 Stücke:
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4000+0.83 EUR
8000+ 0.79 EUR
12000+ 0.76 EUR
Mindestbestellmenge: 4000
NVGS3441T1G NVGS3441T1G onsemi Description: MOSFET P-CH 20V 1.65A 6TSOP
Produkt ist nicht verfügbar
NVGS3443T1G NVGS3443T1G onsemi ntgs3443t1-d.pdf Description: MOSFET P-CH 20V 3.1A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NVMD6N03R2G NVMD6N03R2G onsemi Description: MOSFET 2N-CH 30V 6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.29W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NVMD6N04R2G NVMD6N04R2G onsemi ntmd6n04r2-d.pdf Description: MOSFET 2N-CH 40V 4.6A 8-SOIC
Produkt ist nicht verfügbar
NVMD6P02R2G NVMD6P02R2G onsemi Description: MOSFET 2P-CH 20V 4.8A 8SOIC
Produkt ist nicht verfügbar
NVR1P02T1G NVR1P02T1G onsemi ntr1p02t1-d.pdf Description: MOSFET P-CH 20V 1A SOT-23-3
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.26 EUR
6000+ 0.25 EUR
Mindestbestellmenge: 3000
NVR4003NT3G NVR4003NT3G onsemi ntr4003n-d.pdf Description: MOSFET N-CH 30V 500MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 690mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V
Produkt ist nicht verfügbar
NVTA7002NT1G NVTA7002NT1G onsemi nta7002n-d.pdf Description: MOSFET N-CH 30V 154MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154mA (Tj)
Rds On (Max) @ Id, Vgs: 7Ohm @ 154mA, 4.5V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-75, SOT-416
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
6000+ 0.11 EUR
Mindestbestellmenge: 3000
NVTE4151PT1G onsemi Description: MOSFET P-CH 20V 0.76A SC-89
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
Part Status: Obsolete
Produkt ist nicht verfügbar
NVTJD4001NT1G NVTJD4001NT1G onsemi ntjd4001n-d.pdf Description: MOSFET 2N-CH 30V 0.25A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 272mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 462000 Stücke:
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NVTJD4105CT1G NVTJD4105CT1G onsemi Description: MOSFET 20V 0.63A SC-88
Produkt ist nicht verfügbar
NVTR01P02LT1G NVTR01P02LT1G onsemi ntr1p02lt1-d.pdf Description: MOSFET P-CH 20V 1.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V
Produkt ist nicht verfügbar
NRVUD620CTG murd620ct-d.pdf
NRVUD620CTG
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NRVUD620CTT4G murd620ct-d.pdf
NRVUD620CTT4G
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
NSTJD1155LT1G
Hersteller: onsemi
Description: MOSFET 2P-CH 8V 1.3A SC88
Produkt ist nicht verfügbar
NSV1SS400T1G 1ss400t1-d.pdf
NSV1SS400T1G
Hersteller: onsemi
Description: DIODE GEN PURP 100V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Qualification: AEC-Q101
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.11 EUR
9000+ 0.095 EUR
30000+ 0.093 EUR
75000+ 0.077 EUR
Mindestbestellmenge: 3000
NSV20200LT1G nss20200l-d.pdf
NSV20200LT1G
Hersteller: onsemi
Description: TRANS PNP 20V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 460 mW
auf Bestellung 621000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.27 EUR
6000+ 0.26 EUR
9000+ 0.24 EUR
30000+ 0.23 EUR
Mindestbestellmenge: 3000
NSV40200LT1G nss40200l-d.pdf
NSV40200LT1G
Hersteller: onsemi
Description: TRANS PNP 40V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 460 mW
Produkt ist nicht verfügbar
NSV40201LT1G nss40201l-d.pdf
NSV40201LT1G
Hersteller: onsemi
Description: TRANS NPN 40V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 460 mW
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.21 EUR
6000+ 0.2 EUR
9000+ 0.18 EUR
Mindestbestellmenge: 3000
NSV60601MZ4T1G nss60601mz4-d.pdf
NSV60601MZ4T1G
Hersteller: onsemi
Description: TRANS NPN 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
NSVBAS21HT1G bas21ht1-d.pdf
NSVBAS21HT1G
Hersteller: onsemi
Description: DIODE GEN PURP 250V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.056 EUR
6000+ 0.052 EUR
9000+ 0.043 EUR
30000+ 0.042 EUR
Mindestbestellmenge: 3000
NSVBAS21HT3G bas21ht1-d.pdf
NSVBAS21HT3G
Hersteller: onsemi
Description: DIODE GEN PURP 250V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NSVBAT54HT1G bat54ht1-d.pdf
NSVBAT54HT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.068 EUR
6000+ 0.063 EUR
9000+ 0.052 EUR
30000+ 0.051 EUR
Mindestbestellmenge: 3000
NSVBAT54LT1G bat54lt1-d.pdf
NSVBAT54LT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOT23-3
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.11 EUR
6000+ 0.097 EUR
15000+ 0.082 EUR
Mindestbestellmenge: 3000
NSVBAT54SWT1G bat54swt1-d.pdf
NSVBAT54SWT1G
Hersteller: onsemi
Description: DIODE ARR SCHOT 30V 200MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.17 EUR
6000+ 0.16 EUR
9000+ 0.14 EUR
Mindestbestellmenge: 3000
NSVBAT54WT1G bat54wt1-d.pdf
NSVBAT54WT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 200MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.083 EUR
Mindestbestellmenge: 3000
NSVBAV70TT1G bav70tt1-d.pdf
NSVBAV70TT1G
Hersteller: onsemi
Description: DIODE ARRAY GP 100V 100MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SC-75, SOT-416
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.057 EUR
6000+ 0.053 EUR
9000+ 0.044 EUR
Mindestbestellmenge: 3000
NSVBC858BLT1G bc856alt1-d.pdf
NSVBC858BLT1G
Hersteller: onsemi
Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.053 EUR
6000+ 0.05 EUR
9000+ 0.042 EUR
30000+ 0.039 EUR
Mindestbestellmenge: 3000
NSVD4001DR2G nud4001-d.pdf
NSVD4001DR2G
Hersteller: onsemi
Description: IC LED DRVR LIN PWM 500MA 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Min): 3.6V
Voltage - Supply (Max): 30V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.65 EUR
5000+ 0.62 EUR
Mindestbestellmenge: 2500
NSVMMBTH10LT1G mmbth10lt1-d.pdf
NSVMMBTH10LT1G
Hersteller: onsemi
Description: RF TRANS NPN 25V 650MHZ SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
auf Bestellung 147000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.2 EUR
6000+ 0.18 EUR
15000+ 0.17 EUR
30000+ 0.16 EUR
75000+ 0.15 EUR
Mindestbestellmenge: 3000
NSVMMUN2232LT1G dtc143e-d.pdf
NSVMMUN2232LT1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.087 EUR
6000+ 0.081 EUR
9000+ 0.067 EUR
Mindestbestellmenge: 3000
NSVMUN2212T1G dtc124e-d.pdf
NSVMUN2212T1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
NSVMUN5132T1G dta143e-d.pdf
NSVMUN5132T1G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SC70-3
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
NSVR0230M2T5G nsr0230-d.pdf
NSVR0230M2T5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD723
Packaging: Tape & Reel (TR)
Package / Case: SOD-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-723
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8000+0.15 EUR
16000+ 0.13 EUR
Mindestbestellmenge: 8000
NSVR0240V2T1G nsr0240v2t1-d.pdf
NSVR0240V2T1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD523
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.15 EUR
Mindestbestellmenge: 3000
NSVR0320MW2T1G nsr0320mw2t1-d.pdf
NSVR0320MW2T1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 1A SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 900 mA
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.18 EUR
6000+ 0.17 EUR
9000+ 0.15 EUR
Mindestbestellmenge: 3000
NSVRB521S30T1G rb521s30t1-d.pdf
NSVRB521S30T1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Qualification: AEC-Q101
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.11 EUR
9000+ 0.093 EUR
30000+ 0.092 EUR
Mindestbestellmenge: 3000
NTBV45N06LT4G
NTBV45N06LT4G
Hersteller: onsemi
Description: MOSFET N-CH 60V 45A D2PAK
Produkt ist nicht verfügbar
NTBV45N06T4G
NTBV45N06T4G
Hersteller: onsemi
Description: MOSFET N-CH 60V 45A D2PAK
Produkt ist nicht verfügbar
NTBV75N06T4G
NTBV75N06T4G
Hersteller: onsemi
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Produkt ist nicht verfügbar
NTDV18N06LT4G ntd18n06l-d.pdf
NTDV18N06LT4G
Hersteller: onsemi
Description: MOSFET N-CH 60V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 9A, 5V
Power Dissipation (Max): 2.1W (Ta), 55W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V
Produkt ist nicht verfügbar
NTDV20N06T4G ntd20n06-d.pdf
NTDV20N06T4G
Hersteller: onsemi
Description: MOSFET N-CH 60V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 1.88W (Ta), 60W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V
Produkt ist nicht verfügbar
NTDV20P06LT4G ntd20p06l-d.pdf
NTDV20P06LT4G
Hersteller: onsemi
Description: MOSFET P-CH 60V 15.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 5V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 25 V
Produkt ist nicht verfügbar
NTDV3055L104-1G ntd3055l104-d.pdf
NTDV3055L104-1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 12A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 104mOhm @ 6A, 5V
Power Dissipation (Max): 1.5W (Ta), 48W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
NTDV5804NT4G ntd5804n-d.pdf
NTDV5804NT4G
Hersteller: onsemi
Description: MOSFET N-CH 40V 69A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Produkt ist nicht verfügbar
NTDV5805NT4G NTD5805N,NVD5805N.pdf
NTDV5805NT4G
Hersteller: onsemi
Description: MOSFET N-CH 40V 51A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Produkt ist nicht verfügbar
NTDV6414ANT4G
NTDV6414ANT4G
Hersteller: onsemi
Description: MOSFET N-CH 100V 32A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: DPAK-3
Produkt ist nicht verfügbar
NTMFS4927NCT3G ntmfs4927n-d.pdf
NTMFS4927NCT3G
Hersteller: onsemi
Description: MOSFET N-CH 30V 7.9A/38A 5DFN
Produkt ist nicht verfügbar
NTMFS4935NCT1G ntmfs4935n-d.pdf
NTMFS4935NCT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 13A/93A 5DFN
Produkt ist nicht verfügbar
NTMFS4935NCT3G ntmfs4935n-d.pdf
NTMFS4935NCT3G
Hersteller: onsemi
Description: MOSFET N-CH 30V 13A/93A 5DFN
Produkt ist nicht verfügbar
NTRV4101PT1G ntr4101p-d.pdf
NTRV4101PT1G
Hersteller: onsemi
Description: MOSFET P-CH 20V 1.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.42 EUR
6000+ 0.39 EUR
Mindestbestellmenge: 3000
NTSB20U100CT-1G ntst20u100ct-d.pdf
NTSB20U100CT-1G
Hersteller: onsemi
Description: DIODE ARR SCHOTT 100V 10A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-262 (I2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Produkt ist nicht verfügbar
NTSB30U100CT-1G ntst30u100ct-d.pdf
NTSB30U100CT-1G
Hersteller: onsemi
Description: DIODE ARRAY SCHOTTKY 100V I2PAK
Produkt ist nicht verfügbar
NTST20U100CTG ntst20u100ct-d.pdf
NTST20U100CTG
Hersteller: onsemi
Description: DIODE ARRAY SCHOTTKY 100V TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.1 EUR
10+ 2.78 EUR
Mindestbestellmenge: 6
NVB60N06T4G
NVB60N06T4G
Hersteller: onsemi
Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NVD5865NLT4G NVD5865NL.pdf
NVD5865NLT4G
Hersteller: onsemi
Description: MOSFET N-CH 60V 10A/46A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 19A, 10V
Power Dissipation (Max): 3.1W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NVF2955PT1G ntf2955-d.pdf
NVF2955PT1G
Hersteller: onsemi
Description: MOSFET P CH 60V 1.7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 2.4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NVF3055-100T1G ntf3055-100-d.pdf
NVF3055-100T1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NVF3055L108T3G ntf3055l108-d.pdf
NVF3055L108T3G
Hersteller: onsemi
Description: MOSFET N-CH 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NVF6P02T3G ntf6p02t3-d.pdf
NVF6P02T3G
Hersteller: onsemi
Description: MOSFET P-CH 20V 10A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V
Power Dissipation (Max): 8.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 124000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.83 EUR
8000+ 0.79 EUR
12000+ 0.76 EUR
Mindestbestellmenge: 4000
NVGS3441T1G
NVGS3441T1G
Hersteller: onsemi
Description: MOSFET P-CH 20V 1.65A 6TSOP
Produkt ist nicht verfügbar
NVGS3443T1G ntgs3443t1-d.pdf
NVGS3443T1G
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.1A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NVMD6N03R2G
NVMD6N03R2G
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.29W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NVMD6N04R2G ntmd6n04r2-d.pdf
NVMD6N04R2G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 4.6A 8-SOIC
Produkt ist nicht verfügbar
NVMD6P02R2G
NVMD6P02R2G
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 4.8A 8SOIC
Produkt ist nicht verfügbar
NVR1P02T1G ntr1p02t1-d.pdf
NVR1P02T1G
Hersteller: onsemi
Description: MOSFET P-CH 20V 1A SOT-23-3
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.26 EUR
6000+ 0.25 EUR
Mindestbestellmenge: 3000
NVR4003NT3G ntr4003n-d.pdf
NVR4003NT3G
Hersteller: onsemi
Description: MOSFET N-CH 30V 500MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 690mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V
Produkt ist nicht verfügbar
NVTA7002NT1G nta7002n-d.pdf
NVTA7002NT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 154MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154mA (Tj)
Rds On (Max) @ Id, Vgs: 7Ohm @ 154mA, 4.5V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-75, SOT-416
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.12 EUR
6000+ 0.11 EUR
Mindestbestellmenge: 3000
NVTE4151PT1G
Hersteller: onsemi
Description: MOSFET P-CH 20V 0.76A SC-89
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
Part Status: Obsolete
Produkt ist nicht verfügbar
NVTJD4001NT1G ntjd4001n-d.pdf
NVTJD4001NT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 0.25A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 272mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 462000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.12 EUR
Mindestbestellmenge: 3000
NVTJD4105CT1G
NVTJD4105CT1G
Hersteller: onsemi
Description: MOSFET 20V 0.63A SC-88
Produkt ist nicht verfügbar
NVTR01P02LT1G ntr1p02lt1-d.pdf
NVTR01P02LT1G
Hersteller: onsemi
Description: MOSFET P-CH 20V 1.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V
Produkt ist nicht verfügbar
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