| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRF540N_R4942 | onsemi |
 Description: MOSFET N-CH 100V 33A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 33A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 20 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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IRFP460_R4943 | onsemi |
Description: MOSFET N-CH 500V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFR120_R4941 | onsemi |
Description: MOSFET N-CH 100V 8.4A TO252AA Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 5.9A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFU120_R4941 | onsemi |
Description: MOSFET N-CH 100V 8.4A I-PAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFU220_R4941 | onsemi |
Description: MOSFET N-CH 200V 4.6A I-PAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.4A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I-PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V |
Produkt ist nicht verfügbar |
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LF347N | onsemi |
Description: IC OPAMP JFET 4 CIRCUIT 14MDIP Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Amplifier Type: J-FET Operating Temperature: 0°C ~ 70°C Current - Supply: 7.2mA (x4 Channels) Slew Rate: 13V/µs Gain Bandwidth Product: 4 MHz Current - Input Bias: 50 pA Voltage - Input Offset: 5 mV Supplier Device Package: 14-MDIP Part Status: Obsolete Number of Circuits: 4 Voltage - Supply Span (Min): 7 V Voltage - Supply Span (Max): 36 V |
Produkt ist nicht verfügbar |
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LF353N | onsemi |
Description: IC OPAMP JFET 2 CIRCUIT 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Amplifier Type: J-FET Operating Temperature: 0°C ~ 70°C Current - Supply: 3.6mA Slew Rate: 13V/µs Gain Bandwidth Product: 4 MHz Current - Input Bias: 50 pA Voltage - Input Offset: 5 mV Supplier Device Package: 8-DIP Part Status: Obsolete Number of Circuits: 2 Voltage - Supply Span (Min): 36 V Voltage - Supply Span (Max): 36 V |
Produkt ist nicht verfügbar |
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LM1458N | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Amplifier Type: General Purpose Operating Temperature: 0°C ~ 70°C Current - Supply: 2.3mA (x2 Channels) Slew Rate: 0.5V/µs Gain Bandwidth Product: 1 MHz Current - Input Bias: 80 nA Voltage - Input Offset: 2 mV Supplier Device Package: 8-DIP Part Status: Obsolete Number of Circuits: 2 Current - Output / Channel: 20 mA Voltage - Supply Span (Min): 36 V Voltage - Supply Span (Max): 36 V |
Produkt ist nicht verfügbar |
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LM2903N | onsemi |
Description: IC COMPARATOR 2 DIFF 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Number of Elements: 2 Type: General Purpose Operating Temperature: -40°C ~ 105°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: 8-DIP Current - Quiescent (Max): 2.5mA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16mA @ 5V Part Status: Obsolete |
Produkt ist nicht verfügbar |
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LM393AN | onsemi |
Description: IC COMPARATOR 2 DIFF 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Number of Elements: 2 Type: General Purpose Operating Temperature: 0°C ~ 70°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: 8-DIP Current - Quiescent (Max): 2.5mA Voltage - Input Offset (Max): 2mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 18mA @ 5V Part Status: Obsolete |
Produkt ist nicht verfügbar |
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LM741CN | onsemi |
Description: IC OPAMP GP 1 CIRCUIT 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Amplifier Type: General Purpose Operating Temperature: 0°C ~ 70°C Current - Supply: 1.5mA Slew Rate: 0.5V/µs Gain Bandwidth Product: 1.5 MHz Current - Input Bias: 80 nA Voltage - Input Offset: 2 mV Supplier Device Package: 8-DIP Part Status: Obsolete Number of Circuits: 1 Current - Output / Channel: 25 mA Voltage - Supply Span (Min): 10 V Voltage - Supply Span (Max): 36 V |
Produkt ist nicht verfügbar |
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MM74C923WM | onsemi |
Description: IC ENCODER 20-KEY 1 X 9:4 20SOIC Packaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Circuit: 1 x 9:4 Type: 20-Key Encoder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 15V Independent Circuits: 1 Current - Output High, Low: 15mA, 16mA Voltage Supply Source: Single Supply Supplier Device Package: 20-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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MM74HC4538M | onsemi |
Description: IC MULTIVIBRATOR 26NS 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Monostable Operating Temperature: -40°C ~ 85°C Propagation Delay: 26 ns Independent Circuits: 2 Current - Output High, Low: 5.2mA, 5.2mA Schmitt Trigger Input: Yes Supplier Device Package: 16-SOIC Voltage - Supply: 2 V ~ 6 V |
Produkt ist nicht verfügbar |
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,TO-226_straightlead.jpg "PN4392") |
PN4392 | onsemi |
Description: JFET N-CH 30V TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-92-3 Part Status: Obsolete Power - Max: 625 mW Resistance - RDS(On): 60 Ohms Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V |
Produkt ist nicht verfügbar |
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RC1585M15 | onsemi |
Description: IC REG CONV PENTIUM 1OUT TO263-3 |
Produkt ist nicht verfügbar |
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RC1585T | onsemi |
Description: IC REG CONV PENTIUM 1OUT TO220-3 |
Produkt ist nicht verfügbar |
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RC1585T15 | onsemi |
Description: IC REG CONV PENTIUM 1OUT TO220-3 |
Produkt ist nicht verfügbar |
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RFD10P03LSM | onsemi |
Description: MOSFET P-CH 30V 10A TO252-3 |
Produkt ist nicht verfügbar |
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RFD14N05 | onsemi |
Description: MOSFET N-CH 50V 14A I-PAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V |
Produkt ist nicht verfügbar |
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RFD14N05L | onsemi |
 Description: MOSFET N-CH 50V 14A I-PAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 5V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
Produkt ist nicht verfügbar |
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RFD14N05LSM | onsemi |
Description: MOSFET N-CH 50V 14A TO252AA Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 5V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
auf Bestellung 54229 Stücke: Lieferzeit 10-14 Tag (e) |
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RFD14N05SM | onsemi |
Description: MOSFET N-CH 50V 14A TO252AA Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V |
Produkt ist nicht verfügbar |
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RFD15P05 | onsemi |
Description: MOSFET P-CH 50V 15A I-PAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 15A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V |
Produkt ist nicht verfügbar |
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RFD15P05SM | onsemi |
Description: MOSFET P-CH 50V 15A TO252AA Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 15A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V |
Produkt ist nicht verfügbar |
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RFD16N05 | onsemi |
Description: MOSFET N-CH 50V 16A I-PAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V |
Produkt ist nicht verfügbar |
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RFD16N05LSM | onsemi |
Description: MOSFET N-CH 50V 16A TO252AA Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 5V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 250mA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V |
Produkt ist nicht verfügbar |
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RFD16N05SM | onsemi |
Description: MOSFET N-CH 50V 16A TO252AA Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V |
Produkt ist nicht verfügbar |
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RFD3055LE | onsemi |
Description: MOSFET N-CH 60V 11A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 107mOhm @ 8A, 5V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
Produkt ist nicht verfügbar |
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RFD3055LESM | onsemi |
Description: MOSFET N-CH 60V 11A TO252AA Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 107mOhm @ 8A, 5V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
Produkt ist nicht verfügbar |
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RFD8P05 | onsemi |
Description: MOSFET P-CH 50V 8A I-PAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 8A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V |
Produkt ist nicht verfügbar |
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RFG60P05E | onsemi |
Description: MOSFET P-CH 50V 60A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V |
Produkt ist nicht verfügbar |
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RFG70N06 | onsemi |
Description: MOSFET N-CH 60V 70A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 70A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V |
Produkt ist nicht verfügbar |
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RFP14N05 | onsemi |
Description: MOSFET N-CH 50V 14A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V |
Produkt ist nicht verfügbar |
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RFP2N10L | onsemi |
Description: MOSFET N-CH 100V 2A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2A, 5V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V |
Produkt ist nicht verfügbar |
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RFP3055LE | onsemi |
Description: MOSFET N-CH 60V 11A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 107mOhm @ 8A, 5V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
Produkt ist nicht verfügbar |
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RFP30N06LE | onsemi |
Description: MOSFET N-CH 60V 30A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 30A, 5V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +10V, -8V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
Produkt ist nicht verfügbar |
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RFP30P06 | onsemi |
Description: MOSFET P-CH 60V 30A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
Produkt ist nicht verfügbar |
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RFP40N10 | onsemi |
Description: MOSFET N-CH 100V 40A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 20 V |
Produkt ist nicht verfügbar |
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RFP45N06 | onsemi |
Description: MOSFET N-CH 60V 45A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 10V Power Dissipation (Max): 131W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V |
Produkt ist nicht verfügbar |
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RURG30100 | onsemi |
Description: DIODE GEN PURP 1KV 30A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-2 Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1000 V |
Produkt ist nicht verfügbar |
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RURG30120 | onsemi |
Description: DIODE GEN PURP 1.2KV 30A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
Produkt ist nicht verfügbar |
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RURG3020CC | onsemi |
Description: DIODE ARRAY GP 200V 30A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Avalanche Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 200 V |
Produkt ist nicht verfügbar |
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RURG3060 | onsemi |
Description: DIODE GEN PURP 600V 30A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Avalanche Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
Produkt ist nicht verfügbar |
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RURG3060CC | onsemi |
Description: DIODE ARRAY GP 600V 30A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Avalanche Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
Produkt ist nicht verfügbar |
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RURG5060 | onsemi |
Description: DIODE GEN PURP 600V 50A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Avalanche Current - Average Rectified (Io): 50A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 50 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
Produkt ist nicht verfügbar |
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RURG80100 | onsemi |
Description: DIODE GEN PURP 1KV 80A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 80A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 80 A Current - Reverse Leakage @ Vr: 250 µA @ 1000 V |
Produkt ist nicht verfügbar |
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RURG8060 | onsemi |
Description: DIODE GEN PURP 600V 80A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Avalanche Current - Average Rectified (Io): 80A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 80 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
Produkt ist nicht verfügbar |
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RURP15100 | onsemi |
Description: DIODE GEN PURP 1KV 15A TO220-2L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 125 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
Produkt ist nicht verfügbar |
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RURP1560 | onsemi |
Description: DIODE GEN PURP 600V 15A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
Produkt ist nicht verfügbar |
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RURP3060 | onsemi |
Description: DIODE GEN PURP 600V 30A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
Produkt ist nicht verfügbar |
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RURP8100 | onsemi |
Description: DIODE GEN PURP 1KV 8A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
Produkt ist nicht verfügbar |
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RURP860 | onsemi |
Description: DIODE GEN PURP 600V 8A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
Produkt ist nicht verfügbar |
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| RURU15060 | onsemi |
Description: DIODE GEN PURP 600V 150A TO218 Packaging: Tube Package / Case: TO-218-1 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 150A Supplier Device Package: TO-218 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 150 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
Produkt ist nicht verfügbar |
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TIP112TU | onsemi |
Description: TRANS NPN DARL 100V 2A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
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TIP142TU | onsemi |
Description: TRANS NPN DARL 100V 10A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 80 W |
Produkt ist nicht verfügbar |
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TIP147TU | onsemi |
Description: TRANS PNP DARL 100V 10A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Supplier Device Package: TO-3PN Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 80 W |
auf Bestellung 39 Stücke: Lieferzeit 10-14 Tag (e) |
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1N3595TR | onsemi |
Description: DIODE GEN PURP 150V 200MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 nA @ 125 V |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4448TR | onsemi |
Description: DIODE GEN PURP 100V 200MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
auf Bestellung 180000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4454TR | onsemi |
Description: DIODE GEN PURP 50V 200MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N751ATR | onsemi |
Description: DIODE ZENER 5.1V 500MW DO35 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 1 V |
Produkt ist nicht verfügbar |
| IRF540N_R4942 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 33A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 33A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 20
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 100V 33A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 33A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 20
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
| IRFP460_R4943 |
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Hersteller: onsemi
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Produkt ist nicht verfügbar
| IRFR120_R4941 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 8.4A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET N-CH 100V 8.4A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
| IRFU120_R4941 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 8.4A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET N-CH 100V 8.4A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
| IRFU220_R4941 |
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Hersteller: onsemi
Description: MOSFET N-CH 200V 4.6A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Description: MOSFET N-CH 200V 4.6A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Produkt ist nicht verfügbar
| LF347N |
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Hersteller: onsemi
Description: IC OPAMP JFET 4 CIRCUIT 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: J-FET
Operating Temperature: 0°C ~ 70°C
Current - Supply: 7.2mA (x4 Channels)
Slew Rate: 13V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 50 pA
Voltage - Input Offset: 5 mV
Supplier Device Package: 14-MDIP
Part Status: Obsolete
Number of Circuits: 4
Voltage - Supply Span (Min): 7 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP JFET 4 CIRCUIT 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: J-FET
Operating Temperature: 0°C ~ 70°C
Current - Supply: 7.2mA (x4 Channels)
Slew Rate: 13V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 50 pA
Voltage - Input Offset: 5 mV
Supplier Device Package: 14-MDIP
Part Status: Obsolete
Number of Circuits: 4
Voltage - Supply Span (Min): 7 V
Voltage - Supply Span (Max): 36 V
Produkt ist nicht verfügbar
| LF353N |
|
Hersteller: onsemi
Description: IC OPAMP JFET 2 CIRCUIT 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: J-FET
Operating Temperature: 0°C ~ 70°C
Current - Supply: 3.6mA
Slew Rate: 13V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 50 pA
Voltage - Input Offset: 5 mV
Supplier Device Package: 8-DIP
Part Status: Obsolete
Number of Circuits: 2
Voltage - Supply Span (Min): 36 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP JFET 2 CIRCUIT 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: J-FET
Operating Temperature: 0°C ~ 70°C
Current - Supply: 3.6mA
Slew Rate: 13V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 50 pA
Voltage - Input Offset: 5 mV
Supplier Device Package: 8-DIP
Part Status: Obsolete
Number of Circuits: 2
Voltage - Supply Span (Min): 36 V
Voltage - Supply Span (Max): 36 V
Produkt ist nicht verfügbar
| LM1458N |
|
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Current - Supply: 2.3mA (x2 Channels)
Slew Rate: 0.5V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 80 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-DIP
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 20 mA
Voltage - Supply Span (Min): 36 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Current - Supply: 2.3mA (x2 Channels)
Slew Rate: 0.5V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 80 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-DIP
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 20 mA
Voltage - Supply Span (Min): 36 V
Voltage - Supply Span (Max): 36 V
Produkt ist nicht verfügbar
| LM2903N |
|
Hersteller: onsemi
Description: IC COMPARATOR 2 DIFF 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-DIP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Obsolete
Description: IC COMPARATOR 2 DIFF 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-DIP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Obsolete
Produkt ist nicht verfügbar
| LM393AN |
|
Hersteller: onsemi
Description: IC COMPARATOR 2 DIFF 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-DIP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 2mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
Part Status: Obsolete
Description: IC COMPARATOR 2 DIFF 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-DIP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 2mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
Part Status: Obsolete
Produkt ist nicht verfügbar
| LM741CN |
|
Hersteller: onsemi
Description: IC OPAMP GP 1 CIRCUIT 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Current - Supply: 1.5mA
Slew Rate: 0.5V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 80 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-DIP
Part Status: Obsolete
Number of Circuits: 1
Current - Output / Channel: 25 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 1 CIRCUIT 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Current - Supply: 1.5mA
Slew Rate: 0.5V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 80 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-DIP
Part Status: Obsolete
Number of Circuits: 1
Current - Output / Channel: 25 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 36 V
Produkt ist nicht verfügbar
| MM74C923WM |
|
Hersteller: onsemi
Description: IC ENCODER 20-KEY 1 X 9:4 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 9:4
Type: 20-Key Encoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Independent Circuits: 1
Current - Output High, Low: 15mA, 16mA
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
Part Status: Obsolete
Description: IC ENCODER 20-KEY 1 X 9:4 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 9:4
Type: 20-Key Encoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Independent Circuits: 1
Current - Output High, Low: 15mA, 16mA
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
| MM74HC4538M |
|
Hersteller: onsemi
Description: IC MULTIVIBRATOR 26NS 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 26 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Voltage - Supply: 2 V ~ 6 V
Description: IC MULTIVIBRATOR 26NS 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 26 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Voltage - Supply: 2 V ~ 6 V
Produkt ist nicht verfügbar
| PN4392 |
|
Hersteller: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Description: JFET N-CH 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Power - Max: 625 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Produkt ist nicht verfügbar
| RC1585M15 |
|
Hersteller: onsemi
Description: IC REG CONV PENTIUM 1OUT TO263-3
Description: IC REG CONV PENTIUM 1OUT TO263-3
Produkt ist nicht verfügbar
| RC1585T15 |
|
Hersteller: onsemi
Description: IC REG CONV PENTIUM 1OUT TO220-3
Description: IC REG CONV PENTIUM 1OUT TO220-3
Produkt ist nicht verfügbar
| RFD14N05 |
|
Hersteller: onsemi
Description: MOSFET N-CH 50V 14A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Description: MOSFET N-CH 50V 14A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Produkt ist nicht verfügbar
| RFD14N05L | |
|
Hersteller: onsemi
Description: MOSFET N-CH 50V 14A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 5V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 50V 14A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 5V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Produkt ist nicht verfügbar
| RFD14N05LSM |
|
Hersteller: onsemi
Description: MOSFET N-CH 50V 14A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 5V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 50V 14A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 5V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 54229 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 1.58 EUR |
| 75+ | 1.26 EUR |
| 150+ | 1 EUR |
| 525+ | 0.85 EUR |
| 1050+ | 0.69 EUR |
| 2025+ | 0.65 EUR |
| 5025+ | 0.62 EUR |
| 10050+ | 0.59 EUR |
| RFD14N05SM |
|
Hersteller: onsemi
Description: MOSFET N-CH 50V 14A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Description: MOSFET N-CH 50V 14A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Produkt ist nicht verfügbar
| RFD15P05 |
|
Hersteller: onsemi
Description: MOSFET P-CH 50V 15A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 15A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Description: MOSFET P-CH 50V 15A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 15A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Produkt ist nicht verfügbar
| RFD15P05SM |
|
Hersteller: onsemi
Description: MOSFET P-CH 50V 15A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 15A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Description: MOSFET P-CH 50V 15A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 15A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Produkt ist nicht verfügbar
| RFD16N05 |
|
Hersteller: onsemi
Description: MOSFET N-CH 50V 16A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Description: MOSFET N-CH 50V 16A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Produkt ist nicht verfügbar
| RFD16N05LSM |
|
Hersteller: onsemi
Description: MOSFET N-CH 50V 16A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250mA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Description: MOSFET N-CH 50V 16A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250mA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Produkt ist nicht verfügbar
| RFD16N05SM |
|
Hersteller: onsemi
Description: MOSFET N-CH 50V 16A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Description: MOSFET N-CH 50V 16A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Produkt ist nicht verfügbar
| RFD3055LE |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 11A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 107mOhm @ 8A, 5V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET N-CH 60V 11A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 107mOhm @ 8A, 5V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
| RFD3055LESM |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 11A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 107mOhm @ 8A, 5V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET N-CH 60V 11A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 107mOhm @ 8A, 5V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
| RFD8P05 |
|
Hersteller: onsemi
Description: MOSFET P-CH 50V 8A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
Description: MOSFET P-CH 50V 8A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
Produkt ist nicht verfügbar
| RFG60P05E |
|
Hersteller: onsemi
Description: MOSFET P-CH 50V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Description: MOSFET P-CH 50V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Produkt ist nicht verfügbar
| RFG70N06 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 70A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 70A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Description: MOSFET N-CH 60V 70A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 70A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Produkt ist nicht verfügbar
| RFP14N05 |
|
Hersteller: onsemi
Description: MOSFET N-CH 50V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Description: MOSFET N-CH 50V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Produkt ist nicht verfügbar
| RFP2N10L |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2A, 5V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Description: MOSFET N-CH 100V 2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2A, 5V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Produkt ist nicht verfügbar
| RFP3055LE |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 107mOhm @ 8A, 5V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET N-CH 60V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 107mOhm @ 8A, 5V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
| RFP30N06LE |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 30A, 5V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Description: MOSFET N-CH 60V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 30A, 5V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Produkt ist nicht verfügbar
| RFP30P06 |
|
Hersteller: onsemi
Description: MOSFET P-CH 60V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Description: MOSFET P-CH 60V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Produkt ist nicht verfügbar
| RFP40N10 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 20 V
Description: MOSFET N-CH 100V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 20 V
Produkt ist nicht verfügbar
| RFP45N06 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Description: MOSFET N-CH 60V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Produkt ist nicht verfügbar
| RURG30100 |
|
Hersteller: onsemi
Description: DIODE GEN PURP 1KV 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Description: DIODE GEN PURP 1KV 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Produkt ist nicht verfügbar
| RURG30120 |
|
Hersteller: onsemi
Description: DIODE GEN PURP 1.2KV 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Produkt ist nicht verfügbar
| RURG3020CC |
|
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Description: DIODE ARRAY GP 200V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Produkt ist nicht verfügbar
| RURG3060 |
Hersteller: onsemi
Description: DIODE GEN PURP 600V 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Avalanche
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE GEN PURP 600V 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Avalanche
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Produkt ist nicht verfügbar
| RURG3060CC |
|
Hersteller: onsemi
Description: DIODE ARRAY GP 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE ARRAY GP 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Produkt ist nicht verfügbar
| RURG5060 |
|
Hersteller: onsemi
Description: DIODE GEN PURP 600V 50A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 50 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE GEN PURP 600V 50A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 50 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Produkt ist nicht verfügbar
| RURG80100 |
|
Hersteller: onsemi
Description: DIODE GEN PURP 1KV 80A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 80 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Description: DIODE GEN PURP 1KV 80A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 80 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Produkt ist nicht verfügbar
| RURG8060 |
|
Hersteller: onsemi
Description: DIODE GEN PURP 600V 80A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Avalanche
Current - Average Rectified (Io): 80A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 80 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE GEN PURP 600V 80A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Avalanche
Current - Average Rectified (Io): 80A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 80 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Produkt ist nicht verfügbar
| RURP15100 |
|
Hersteller: onsemi
Description: DIODE GEN PURP 1KV 15A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE GEN PURP 1KV 15A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Produkt ist nicht verfügbar
| RURP1560 |
|
Hersteller: onsemi
Description: DIODE GEN PURP 600V 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
| RURP3060 |
|
Hersteller: onsemi
Description: DIODE GEN PURP 600V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE GEN PURP 600V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Produkt ist nicht verfügbar
| RURP8100 |
|
Hersteller: onsemi
Description: DIODE GEN PURP 1KV 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE GEN PURP 1KV 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Produkt ist nicht verfügbar
| RURP860 |
|
Hersteller: onsemi
Description: DIODE GEN PURP 600V 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
| RURU15060 |
|
Hersteller: onsemi
Description: DIODE GEN PURP 600V 150A TO218
Packaging: Tube
Package / Case: TO-218-1
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: TO-218
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 150 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE GEN PURP 600V 150A TO218
Packaging: Tube
Package / Case: TO-218-1
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: TO-218
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 150 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Produkt ist nicht verfügbar
| TIP112TU |
|
Hersteller: onsemi
Description: TRANS NPN DARL 100V 2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS NPN DARL 100V 2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
| TIP142TU |
|
Hersteller: onsemi
Description: TRANS NPN DARL 100V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W
Description: TRANS NPN DARL 100V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W
Produkt ist nicht verfügbar
| TIP147TU |
|
Hersteller: onsemi
Description: TRANS PNP DARL 100V 10A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-3PN
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W
Description: TRANS PNP DARL 100V 10A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-3PN
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 3.15 EUR |
| 30+ | 2.54 EUR |
| 1N3595TR |
|
Hersteller: onsemi
Description: DIODE GEN PURP 150V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Description: DIODE GEN PURP 150V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.035 EUR |
| 1N4448TR |
|
Hersteller: onsemi
Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.025 EUR |
| 20000+ | 0.023 EUR |
| 30000+ | 0.021 EUR |
| 50000+ | 0.02 EUR |
| 70000+ | 0.019 EUR |
| 100000+ | 0.018 EUR |
| 1N4454TR |
|
Hersteller: onsemi
Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.024 EUR |
| 30000+ | 0.022 EUR |
| 1N751ATR |
|
Hersteller: onsemi
Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Produkt ist nicht verfügbar