Technische Details RFD14N05 FAIRCHILD
Description: MOSFET N-CH 50V 14A I-PAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: IPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V.
Weitere Produktangebote RFD14N05
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| RFD14N05 | Hersteller : Fairchild |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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RFD14N05 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 50V 14A 3-Pin(3+Tab) IPAK Rail |
Produkt ist nicht verfügbar |
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RFD14N05 | Hersteller : onsemi |
Description: MOSFET N-CH 50V 14A I-PAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V |
Produkt ist nicht verfügbar |
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RFD14N05 | Hersteller : onsemi / Fairchild |
MOSFET TO-251AA N-Ch Power |
Produkt ist nicht verfügbar |