RFG60P05+E
Hersteller:
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details RFG60P05+E
Description: MOSFET P-CH 50V 60A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V, Power Dissipation (Max): 215W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V.
Weitere Produktangebote RFG60P05+E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| RFG60P05E | Hersteller : FAIRCHILD |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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RFG60P05E | Hersteller : onsemi |
Description: MOSFET P-CH 50V 60A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V |
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