| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| NC7SZ34UCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; WLCSP4; 10uA Operating temperature: -40...85°C Mounting: SMD Quiescent current: 10µA Kind of package: reel; tape Case: WLCSP4 Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Supply voltage: 1.65...5.5V DC Type of integrated circuit: digital Technology: CMOS |
Produkt ist nicht verfügbar |
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MC10EL16DR2G | ONSEMI |
Category: Other logic integrated circuits Description: IC: digital; receiver,differential; Ch: 1; 4.2÷5.7VDC; SMD; SO8 Type of integrated circuit: digital Kind of integrated circuit: differential; receiver Number of channels: 1 Supply voltage: 4.2...5.7V DC Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MC74ACT86DG | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 40uA Case: SO14 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2...6V DC Type of integrated circuit: digital Number of channels: quad; 4 Quiescent current: 40µA Kind of package: tube Kind of gate: XOR Family: ACT Number of inputs: 2 |
auf Bestellung 91 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74ACT86DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 40µA Family: ACT |
Produkt ist nicht verfügbar |
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| MC74ACT86DTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; TTL; SMD; TSSOP14; ACT; 4.5÷5.5VDC; ACT Type of integrated circuit: digital Kind of gate: XOR Number of channels: 4 Number of inputs: 2 Technology: TTL Mounting: SMD Case: TSSOP14 Manufacturer series: ACT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT |
Produkt ist nicht verfügbar |
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MC14099BDWR2G | ONSEMI |
Category: Latches Description: IC: digital; 8bit,latch; Ch: 1; IN: 6; CMOS; 3÷18VDC; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: 8bit; latch Number of channels: 1 Number of inputs: 6 Technology: CMOS Supply voltage: 3...18V DC Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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NTR3A052PZT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 0.72W; SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -2.6A On-state resistance: 47mΩ Type of transistor: P-MOSFET Power dissipation: 0.72W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V Case: SOT23 |
Produkt ist nicht verfügbar |
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NS5B1G385DTT1G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 1; Outputs: 1; TSSOP5; 2÷5.5VDC; reel,tape Type of integrated circuit: analog switch Technology: TTL Case: TSSOP5 Number of channels: 1 Number of outputs: 1 Supply voltage: 2...5.5V DC Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: SPST-NO Quiescent current: 1µA Number of inputs: 2 |
Produkt ist nicht verfügbar |
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FAN7081MX-GF085 | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,gate driver; MillerDrive™; SO8; -500÷250mA Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Technology: MillerDrive™ Case: SO8 Output current: -500...250mA Number of channels: 1 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 10ns Application: automotive industry Kind of package: reel; tape Kind of output: inverting Voltage class: 600V |
Produkt ist nicht verfügbar |
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| FAN7385MX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,gate driver; MillerDrive™; SOP14; Ch: 2; 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Technology: MillerDrive™ Case: SOP14 Output current: -650...350mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 90ns Pulse fall time: 70ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
Produkt ist nicht verfügbar |
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CM1213A-02SR | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 6.5÷9V; 0.225W; SOT143; Features: ESD protection Type of diode: TVS array Mounting: SMD Kind of package: reel; tape Case: SOT143 Leakage current: 0.1µA Features of semiconductor devices: ESD protection Peak pulse power dissipation: 0.225W Max. off-state voltage: 3.3...5V Breakdown voltage: 6.5...9V Number of channels: 2 |
auf Bestellung 1949 Stücke: Lieferzeit 14-21 Tag (e) |
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| CM1213A-04S7 | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 6.5÷9V; 0.225W; SC70-6; Features: ESD protection Type of diode: TVS array Mounting: SMD Kind of package: reel; tape Case: SC70-6 Leakage current: 0.1µA Features of semiconductor devices: ESD protection Peak pulse power dissipation: 0.225W Max. off-state voltage: 3.3...5V Breakdown voltage: 6.5...9V Number of channels: 4 |
Produkt ist nicht verfügbar |
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| NTHL190N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.7A Pulsed drain current: 50A Power dissipation: 162W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.165Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| NCP781BMN033TAG | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 100mA; DFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 6.5V Output voltage: 3.3V Output current: 0.1A Case: DFN6 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 6...150V Manufacturer series: NCP781 |
Produkt ist nicht verfügbar |
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| NCP781BMN050TAG | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 100mA; DFN6; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 7V Output voltage: 5V Output current: 0.1A Case: DFN6 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 6...150V Manufacturer series: NCP781 |
Produkt ist nicht verfügbar |
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| NCP781BMN150TAG | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 15V; 100mA; DFN6; SMD Mounting: SMD Manufacturer series: NCP781 Operating temperature: -40...125°C Input voltage: 6...150V Output voltage: 15V Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Case: DFN6 Tolerance: ±2.5% Output current: 0.1A Voltage drop: 9.5V Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
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| MM3Z9V1B | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 9.1V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 9.1V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 1V Case: SOD323F Semiconductor structure: single diode Leakage current: 0.45µA |
Produkt ist nicht verfügbar |
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| MM3Z9V1C | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 9.1V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 1V Case: SOD323F Semiconductor structure: single diode Leakage current: 0.45µA |
Produkt ist nicht verfügbar |
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MM3Z9V1ST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOD323; single diode Mounting: SMD Kind of package: reel; tape Power dissipation: 0.3W Zener voltage: 9.1V Semiconductor structure: single diode Type of diode: Zener Tolerance: ±2% Case: SOD323 |
Produkt ist nicht verfügbar |
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MM3Z9V1T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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MMSZ9V1T1G | ONSEMI |
 Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.5µA |
auf Bestellung 2328 Stücke: Lieferzeit 14-21 Tag (e) |
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| MM3Z39VB | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 39V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 39V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 1V Case: SOD323F Semiconductor structure: single diode Leakage current: 45nA |
Produkt ist nicht verfügbar |
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| MM3Z39VC | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 39V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 39V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 1V Case: SOD323F Semiconductor structure: single diode Leakage current: 45nA |
Produkt ist nicht verfügbar |
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MM3Z39VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 39V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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| FPF3380UCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 5A; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C Type of integrated circuit: power switch Supply voltage: 2.8...23V DC Mounting: SMD Case: WLCSP12 Integrated circuit features: ESD-protected Kind of package: reel; tape Operating temperature: -40...85°C On-state resistance: 15mΩ Output current: 5A Number of channels: 1 Active logical level: low |
Produkt ist nicht verfügbar |
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MMSZ5230BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5235BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode Mounting: SMD Case: SOD123 Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 6.8V Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener |
Produkt ist nicht verfügbar |
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| NRVTS30120MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 120V; 30A; DFN5; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 120V Load current: 30A Max. load current: 60A Semiconductor structure: single diode Max. forward voltage: 0.95V Case: DFN5 Kind of package: reel; tape Max. forward impulse current: 300A Application: automotive industry |
Produkt ist nicht verfügbar |
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| NCN8024DWR2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; card inerface; 3.3÷5.5VDC; SMD; SO28; reel,tape Case: SO28 Kind of integrated circuit: card inerface Mounting: SMD Supply voltage: 3.3...5.5V DC Type of integrated circuit: interface Operating temperature: -40...85°C Application: for smart card application Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| NCN8025MTTBG | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; card inerface; 2.7÷5.5VDC; SMD; QFN16; reel,tape Case: QFN16 Kind of integrated circuit: card inerface Mounting: SMD Supply voltage: 2.7...5.5V DC Type of integrated circuit: interface Operating temperature: -40...85°C Application: for smart card application Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| NCN8026AMNTXG | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; card inerface; 1.6÷5.5VDC; SMD; QFN24; reel,tape Case: QFN24 Kind of integrated circuit: card inerface Mounting: SMD Supply voltage: 1.6...5.5V DC Type of integrated circuit: interface Operating temperature: -40...85°C Application: for smart card application Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| CAT25160VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 2048x8bit Access time: 40ns Clock frequency: 20MHz Kind of package: reel; tape Kind of interface: serial Memory: 16kb EEPROM Case: SOIC8 Operating voltage: 1.8...5.5V |
Produkt ist nicht verfügbar |
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| CAV25160VE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 2.5÷5.5V; 10MHz Mounting: SMD Operating temperature: -40...125°C Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 2048x8bit Access time: 35ns Clock frequency: 10MHz Kind of package: reel; tape Kind of interface: serial Memory: 16kb EEPROM Case: SOIC8 Operating voltage: 2.5...5.5V |
Produkt ist nicht verfügbar |
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| NRVUS160VT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A Mounting: SMD Case: SMB Max. off-state voltage: 0.6kV Max. forward voltage: 1.25V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 75ns Max. forward impulse current: 35A Application: automotive industry Kind of package: reel; tape Type of diode: rectifying |
Produkt ist nicht verfügbar |
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| NRVUHS160VT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMB; Ufmax: 2.4V; Ifsm: 15A Mounting: SMD Case: SMB Max. off-state voltage: 0.6kV Max. forward voltage: 2.4V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 15A Application: automotive industry Kind of package: reel; tape Type of diode: rectifying |
Produkt ist nicht verfügbar |
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NC7SP00P5X | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC88A; TinyLogic; -40÷85°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC88A Manufacturer series: TinyLogic Supply voltage: 0.9...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: NC |
auf Bestellung 2987 Stücke: Lieferzeit 14-21 Tag (e) |
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SD12CT1G | ONSEMI |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 13.3V; 15A; bidirectional; SOD323; reel,tape Type of diode: TVS Breakdown voltage: 13.3V Max. forward impulse current: 15A Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 12V Features of semiconductor devices: ESD protection Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 2274 Stücke: Lieferzeit 14-21 Tag (e) |
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CM1293A-02SO | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 6V; 0.225W; SC74; Features: ESD protection; Ch: 2 Type of diode: TVS array Breakdown voltage: 6V Peak pulse power dissipation: 0.225W Mounting: SMD Case: SC74 Max. off-state voltage: 3.3...5V Features of semiconductor devices: ESD protection Leakage current: 0.1µA Number of channels: 2 Kind of package: reel; tape Capacitance: 2pF |
auf Bestellung 1015 Stücke: Lieferzeit 14-21 Tag (e) |
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74VHC175MTC | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 4; CMOS; VHC; SMD; TSSOP16; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 4 Technology: CMOS Manufacturer series: VHC Mounting: SMD Case: TSSOP16 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: tube Trigger: positive-edge-triggered |
Produkt ist nicht verfügbar |
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74VHC175MTCX | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 4; CMOS; VHC; SMD; TSSOP16; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 4 Technology: CMOS Manufacturer series: VHC Mounting: SMD Case: TSSOP16 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Trigger: positive-edge-triggered |
Produkt ist nicht verfügbar |
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74VHC175MX | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 4; CMOS; VHC; SMD; SOIC16; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 4 Technology: CMOS Manufacturer series: VHC Mounting: SMD Case: SOIC16 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: VHC |
Produkt ist nicht verfügbar |
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2SB815-7-TB-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.7A Power dissipation: 0.2W Case: SC59 Current gain: 300...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
Produkt ist nicht verfügbar |
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FDS86141 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7A; 2.5W; SO8 Drain-source voltage: 100V Drain current: 7A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.5nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SO8 |
Produkt ist nicht verfügbar |
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NCV7327D10R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5÷18VDC; LIN; SMD; SO8; reel,tape Type of integrated circuit: interface Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Application: automotive industry Kind of integrated circuit: transceiver Supply voltage: 5...18V DC Interface: LIN |
Produkt ist nicht verfügbar |
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| NCV7327MW0R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5÷18VDC; LIN; SMD; DFNW8; reel,tape Type of integrated circuit: interface Case: DFNW8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Application: automotive industry Kind of integrated circuit: transceiver Supply voltage: 5...18V DC Interface: LIN |
Produkt ist nicht verfügbar |
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ES3B | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 3A Reverse recovery time: 30ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 45pF Case: SMC Max. forward voltage: 0.95V Max. forward impulse current: 100A Power dissipation: 1.66W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| NCP302045MNTWG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver Case: PQFN31 5X5 Topology: MOSFET half-bridge Operating temperature: -40...125°C Mounting: SMD Supply voltage: 4.5...5.5V DC Output current: 45A Type of integrated circuit: driver Impulse rise time: 12ns Pulse fall time: 6ns Kind of integrated circuit: gate driver; high-side; low-side |
Produkt ist nicht verfügbar |
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| NCP302150MNTWG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver Case: PQFN31 5X5 Topology: MOSFET half-bridge Operating temperature: -40...125°C Mounting: SMD Supply voltage: 4.5...5.5V DC Output current: 50A Type of integrated circuit: driver Impulse rise time: 12ns Pulse fall time: 6ns Kind of integrated circuit: gate driver; high-side; low-side |
Produkt ist nicht verfügbar |
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NCP5183DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver Case: SO8 Topology: MOSFET half-bridge Operating temperature: -40...125°C Voltage class: 600V Mounting: SMD Supply voltage: 9...18V DC Output current: -4.3...4.3A Type of integrated circuit: driver Impulse rise time: 40ns Pulse fall time: 40ns Kind of integrated circuit: gate driver; high-side; low-side |
Produkt ist nicht verfügbar |
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NCP81080DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8 Case: SO8 Topology: MOSFET half-bridge Operating temperature: -40...140°C Mounting: SMD Supply voltage: 5.5...20V DC Output current: -800...500mA Type of integrated circuit: driver Impulse rise time: 19ns Pulse fall time: 17ns Kind of integrated circuit: gate driver; high-side |
auf Bestellung 810 Stücke: Lieferzeit 14-21 Tag (e) |
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| FOD0721 | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 3.75kV; 25Mbps; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: logic Insulation voltage: 3.75kV Transfer rate: 25Mbps Case: SO8 Turn-on time: 5ns Turn-off time: 4.5ns Slew rate: 40kV/μs Output voltage: -0.5...6.5V Manufacturer series: FOD0721 |
Produkt ist nicht verfügbar |
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| FDMA905P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -10A; 2.4W; WDFN6 Mounting: SMD Power dissipation: 2.4W Polarisation: unipolar Drain current: -10A Kind of channel: enhanced Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: WDFN6 On-state resistance: 21mΩ |
Produkt ist nicht verfügbar |
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| FDMA410NZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.5A; 2.4W; WDFN6 Mounting: SMD Power dissipation: 2.4W Polarisation: unipolar Drain current: 9.5A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: WDFN6 On-state resistance: 32mΩ |
Produkt ist nicht verfügbar |
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| FDMA86551L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.5A; 2.4W; WDFN6 Kind of package: reel; tape Case: WDFN6 Drain-source voltage: 60V Drain current: 7.5A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD |
Produkt ist nicht verfügbar |
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FDMA430NZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 2.4W; MicroFET Mounting: SMD Power dissipation: 2.4W Gate charge: 11nC Polarisation: unipolar Technology: PowerTrench® Drain current: 5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: MicroFET On-state resistance: 61mΩ |
Produkt ist nicht verfügbar |
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| FDMA8051L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 10A; Idm: 80A; 2.4W; MicroFET Case: MicroFET Mounting: SMD Drain current: 10A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 19mΩ Pulsed drain current: 80A Power dissipation: 2.4W Gate charge: 20nC Polarisation: unipolar |
Produkt ist nicht verfügbar |
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| FDMA8878 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2.4W; WDFN6 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 10A On-state resistance: 21mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: WDFN6 |
Produkt ist nicht verfügbar |
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| FDMA908PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -40A; 2.4W Mounting: SMD Pulsed drain current: -40A Power dissipation: 2.4W Gate charge: 34nC Polarisation: unipolar Features of semiconductor devices: ESD protected gate Drain current: -12A Kind of channel: enhanced Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: MicroFET On-state resistance: 16mΩ |
Produkt ist nicht verfügbar |
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|
FDS4675 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -11A; 2.4W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -40V Drain current: -11A Power dissipation: 2.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 632 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTD5C434NT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 23A; Idm: 900A; 2.4W; DPAK Mounting: SMD Pulsed drain current: 900A Power dissipation: 2.4W Gate charge: 80.6nC Polarisation: unipolar Drain current: 23A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK On-state resistance: 1.7mΩ |
Produkt ist nicht verfügbar |
| NC7SZ34UCX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; WLCSP4; 10uA
Operating temperature: -40...85°C
Mounting: SMD
Quiescent current: 10µA
Kind of package: reel; tape
Case: WLCSP4
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; WLCSP4; 10uA
Operating temperature: -40...85°C
Mounting: SMD
Quiescent current: 10µA
Kind of package: reel; tape
Case: WLCSP4
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Technology: CMOS
Produkt ist nicht verfügbar
| MC10EL16DR2G |
|
Hersteller: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; receiver,differential; Ch: 1; 4.2÷5.7VDC; SMD; SO8
Type of integrated circuit: digital
Kind of integrated circuit: differential; receiver
Number of channels: 1
Supply voltage: 4.2...5.7V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Other logic integrated circuits
Description: IC: digital; receiver,differential; Ch: 1; 4.2÷5.7VDC; SMD; SO8
Type of integrated circuit: digital
Kind of integrated circuit: differential; receiver
Number of channels: 1
Supply voltage: 4.2...5.7V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
| MC74ACT86DG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 40uA
Case: SO14
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Type of integrated circuit: digital
Number of channels: quad; 4
Quiescent current: 40µA
Kind of package: tube
Kind of gate: XOR
Family: ACT
Number of inputs: 2
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 40uA
Case: SO14
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Type of integrated circuit: digital
Number of channels: quad; 4
Quiescent current: 40µA
Kind of package: tube
Kind of gate: XOR
Family: ACT
Number of inputs: 2
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 91+ | 0.79 EUR |
| MC74ACT86DR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
Produkt ist nicht verfügbar
| MC74ACT86DTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; TTL; SMD; TSSOP14; ACT; 4.5÷5.5VDC; ACT
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: TSSOP14
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; TTL; SMD; TSSOP14; ACT; 4.5÷5.5VDC; ACT
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: TSSOP14
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Produkt ist nicht verfügbar
| MC14099BDWR2G |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 8bit,latch; Ch: 1; IN: 6; CMOS; 3÷18VDC; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Latches
Description: IC: digital; 8bit,latch; Ch: 1; IN: 6; CMOS; 3÷18VDC; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
| NTR3A052PZT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 0.72W; SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.6A
On-state resistance: 47mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.72W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: SOT23
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 0.72W; SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.6A
On-state resistance: 47mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.72W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: SOT23
Produkt ist nicht verfügbar
| NS5B1G385DTT1G |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; Outputs: 1; TSSOP5; 2÷5.5VDC; reel,tape
Type of integrated circuit: analog switch
Technology: TTL
Case: TSSOP5
Number of channels: 1
Number of outputs: 1
Supply voltage: 2...5.5V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: SPST-NO
Quiescent current: 1µA
Number of inputs: 2
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; Outputs: 1; TSSOP5; 2÷5.5VDC; reel,tape
Type of integrated circuit: analog switch
Technology: TTL
Case: TSSOP5
Number of channels: 1
Number of outputs: 1
Supply voltage: 2...5.5V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: SPST-NO
Quiescent current: 1µA
Number of inputs: 2
Produkt ist nicht verfügbar
| FAN7081MX-GF085 |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; MillerDrive™; SO8; -500÷250mA
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Technology: MillerDrive™
Case: SO8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 10ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: inverting
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; MillerDrive™; SO8; -500÷250mA
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Technology: MillerDrive™
Case: SO8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 10ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: inverting
Voltage class: 600V
Produkt ist nicht verfügbar
| FAN7385MX |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; MillerDrive™; SOP14; Ch: 2; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Technology: MillerDrive™
Case: SOP14
Output current: -650...350mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 90ns
Pulse fall time: 70ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; MillerDrive™; SOP14; Ch: 2; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Technology: MillerDrive™
Case: SOP14
Output current: -650...350mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 90ns
Pulse fall time: 70ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
| CM1213A-02SR |
|
Hersteller: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5÷9V; 0.225W; SOT143; Features: ESD protection
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOT143
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.225W
Max. off-state voltage: 3.3...5V
Breakdown voltage: 6.5...9V
Number of channels: 2
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5÷9V; 0.225W; SOT143; Features: ESD protection
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOT143
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.225W
Max. off-state voltage: 3.3...5V
Breakdown voltage: 6.5...9V
Number of channels: 2
auf Bestellung 1949 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 136+ | 0.53 EUR |
| 180+ | 0.4 EUR |
| 199+ | 0.36 EUR |
| 260+ | 0.28 EUR |
| 275+ | 0.26 EUR |
| CM1213A-04S7 |
|
Hersteller: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5÷9V; 0.225W; SC70-6; Features: ESD protection
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SC70-6
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.225W
Max. off-state voltage: 3.3...5V
Breakdown voltage: 6.5...9V
Number of channels: 4
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5÷9V; 0.225W; SC70-6; Features: ESD protection
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SC70-6
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.225W
Max. off-state voltage: 3.3...5V
Breakdown voltage: 6.5...9V
Number of channels: 4
Produkt ist nicht verfügbar
| NTHL190N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Pulsed drain current: 50A
Power dissipation: 162W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Pulsed drain current: 50A
Power dissipation: 162W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NCP781BMN033TAG |
|
Hersteller: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 100mA; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 6.5V
Output voltage: 3.3V
Output current: 0.1A
Case: DFN6
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...150V
Manufacturer series: NCP781
Category: Unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 100mA; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 6.5V
Output voltage: 3.3V
Output current: 0.1A
Case: DFN6
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...150V
Manufacturer series: NCP781
Produkt ist nicht verfügbar
| NCP781BMN050TAG |
|
Hersteller: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 100mA; DFN6; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 7V
Output voltage: 5V
Output current: 0.1A
Case: DFN6
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...150V
Manufacturer series: NCP781
Category: Unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 100mA; DFN6; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 7V
Output voltage: 5V
Output current: 0.1A
Case: DFN6
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...150V
Manufacturer series: NCP781
Produkt ist nicht verfügbar
| NCP781BMN150TAG |
|
Hersteller: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 15V; 100mA; DFN6; SMD
Mounting: SMD
Manufacturer series: NCP781
Operating temperature: -40...125°C
Input voltage: 6...150V
Output voltage: 15V
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Case: DFN6
Tolerance: ±2.5%
Output current: 0.1A
Voltage drop: 9.5V
Type of integrated circuit: voltage regulator
Category: Unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 15V; 100mA; DFN6; SMD
Mounting: SMD
Manufacturer series: NCP781
Operating temperature: -40...125°C
Input voltage: 6...150V
Output voltage: 15V
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Case: DFN6
Tolerance: ±2.5%
Output current: 0.1A
Voltage drop: 9.5V
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
| MM3Z9V1B |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 9.1V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 0.45µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 9.1V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 0.45µA
Produkt ist nicht verfügbar
| MM3Z9V1C |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 9.1V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 0.45µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 9.1V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 0.45µA
Produkt ist nicht verfügbar
| MM3Z9V1ST1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOD323; single diode
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.3W
Zener voltage: 9.1V
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Case: SOD323
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOD323; single diode
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.3W
Zener voltage: 9.1V
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Case: SOD323
Produkt ist nicht verfügbar
| MM3Z9V1T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| MMSZ9V1T1G | |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.5µA
auf Bestellung 2328 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1134+ | 0.063 EUR |
| 1260+ | 0.057 EUR |
| 1655+ | 0.043 EUR |
| 1751+ | 0.041 EUR |
| MM3Z39VB |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 39V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 39V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Produkt ist nicht verfügbar
| MM3Z39VC |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 39V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 39V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Produkt ist nicht verfügbar
| MM3Z39VT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| FPF3380UCX |
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 5A; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Type of integrated circuit: power switch
Supply voltage: 2.8...23V DC
Mounting: SMD
Case: WLCSP12
Integrated circuit features: ESD-protected
Kind of package: reel; tape
Operating temperature: -40...85°C
On-state resistance: 15mΩ
Output current: 5A
Number of channels: 1
Active logical level: low
Category: Power switches - integrated circuits
Description: IC: power switch; 5A; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Type of integrated circuit: power switch
Supply voltage: 2.8...23V DC
Mounting: SMD
Case: WLCSP12
Integrated circuit features: ESD-protected
Kind of package: reel; tape
Operating temperature: -40...85°C
On-state resistance: 15mΩ
Output current: 5A
Number of channels: 1
Active logical level: low
Produkt ist nicht verfügbar
| MMSZ5230BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 2.86 EUR |
| MMSZ5235BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 6.8V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 6.8V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Produkt ist nicht verfügbar
| NRVTS30120MFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 120V; 30A; DFN5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Max. load current: 60A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Case: DFN5
Kind of package: reel; tape
Max. forward impulse current: 300A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 120V; 30A; DFN5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Max. load current: 60A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Case: DFN5
Kind of package: reel; tape
Max. forward impulse current: 300A
Application: automotive industry
Produkt ist nicht verfügbar
| NCN8024DWR2G |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 3.3÷5.5VDC; SMD; SO28; reel,tape
Case: SO28
Kind of integrated circuit: card inerface
Mounting: SMD
Supply voltage: 3.3...5.5V DC
Type of integrated circuit: interface
Operating temperature: -40...85°C
Application: for smart card application
Kind of package: reel; tape
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 3.3÷5.5VDC; SMD; SO28; reel,tape
Case: SO28
Kind of integrated circuit: card inerface
Mounting: SMD
Supply voltage: 3.3...5.5V DC
Type of integrated circuit: interface
Operating temperature: -40...85°C
Application: for smart card application
Kind of package: reel; tape
Produkt ist nicht verfügbar
| NCN8025MTTBG |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 2.7÷5.5VDC; SMD; QFN16; reel,tape
Case: QFN16
Kind of integrated circuit: card inerface
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: interface
Operating temperature: -40...85°C
Application: for smart card application
Kind of package: reel; tape
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 2.7÷5.5VDC; SMD; QFN16; reel,tape
Case: QFN16
Kind of integrated circuit: card inerface
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: interface
Operating temperature: -40...85°C
Application: for smart card application
Kind of package: reel; tape
Produkt ist nicht verfügbar
| NCN8026AMNTXG |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 1.6÷5.5VDC; SMD; QFN24; reel,tape
Case: QFN24
Kind of integrated circuit: card inerface
Mounting: SMD
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: interface
Operating temperature: -40...85°C
Application: for smart card application
Kind of package: reel; tape
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 1.6÷5.5VDC; SMD; QFN24; reel,tape
Case: QFN24
Kind of integrated circuit: card inerface
Mounting: SMD
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: interface
Operating temperature: -40...85°C
Application: for smart card application
Kind of package: reel; tape
Produkt ist nicht verfügbar
| CAT25160VI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 2048x8bit
Access time: 40ns
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 16kb EEPROM
Case: SOIC8
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 2048x8bit
Access time: 40ns
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 16kb EEPROM
Case: SOIC8
Operating voltage: 1.8...5.5V
Produkt ist nicht verfügbar
| CAV25160VE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 2048x8bit
Access time: 35ns
Clock frequency: 10MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 16kb EEPROM
Case: SOIC8
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 2048x8bit
Access time: 35ns
Clock frequency: 10MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 16kb EEPROM
Case: SOIC8
Operating voltage: 2.5...5.5V
Produkt ist nicht verfügbar
| NRVUS160VT3G |
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Mounting: SMD
Case: SMB
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.25V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 35A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Mounting: SMD
Case: SMB
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.25V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 35A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Produkt ist nicht verfügbar
| NRVUHS160VT3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMB; Ufmax: 2.4V; Ifsm: 15A
Mounting: SMD
Case: SMB
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.4V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 15A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMB; Ufmax: 2.4V; Ifsm: 15A
Mounting: SMD
Case: SMB
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.4V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 15A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
Produkt ist nicht verfügbar
| NC7SP00P5X |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC88A; TinyLogic; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: TinyLogic
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: NC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC88A; TinyLogic; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: TinyLogic
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: NC
auf Bestellung 2987 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 158+ | 0.45 EUR |
| 181+ | 0.4 EUR |
| 408+ | 0.18 EUR |
| 432+ | 0.17 EUR |
| SD12CT1G |
|
Hersteller: ONSEMI
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 13.3V; 15A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Breakdown voltage: 13.3V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 13.3V; 15A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Breakdown voltage: 13.3V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 2274 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 221+ | 0.32 EUR |
| 353+ | 0.2 EUR |
| 394+ | 0.18 EUR |
| 455+ | 0.16 EUR |
| 481+ | 0.15 EUR |
| CM1293A-02SO |
|
Hersteller: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 0.225W; SC74; Features: ESD protection; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6V
Peak pulse power dissipation: 0.225W
Mounting: SMD
Case: SC74
Max. off-state voltage: 3.3...5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 2pF
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 0.225W; SC74; Features: ESD protection; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6V
Peak pulse power dissipation: 0.225W
Mounting: SMD
Case: SC74
Max. off-state voltage: 3.3...5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 2pF
auf Bestellung 1015 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 315+ | 0.23 EUR |
| 350+ | 0.21 EUR |
| 395+ | 0.18 EUR |
| 465+ | 0.15 EUR |
| 74VHC175MTC |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; VHC; SMD; TSSOP16; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Manufacturer series: VHC
Mounting: SMD
Case: TSSOP16
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; VHC; SMD; TSSOP16; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Manufacturer series: VHC
Mounting: SMD
Case: TSSOP16
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Trigger: positive-edge-triggered
Produkt ist nicht verfügbar
| 74VHC175MTCX |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; VHC; SMD; TSSOP16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Manufacturer series: VHC
Mounting: SMD
Case: TSSOP16
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; VHC; SMD; TSSOP16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Manufacturer series: VHC
Mounting: SMD
Case: TSSOP16
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Produkt ist nicht verfügbar
| 74VHC175MX |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; VHC; SMD; SOIC16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Manufacturer series: VHC
Mounting: SMD
Case: SOIC16
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: VHC
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; VHC; SMD; SOIC16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Manufacturer series: VHC
Mounting: SMD
Case: SOIC16
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: VHC
Produkt ist nicht verfügbar
| 2SB815-7-TB-E |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.7A
Power dissipation: 0.2W
Case: SC59
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.7A
Power dissipation: 0.2W
Case: SC59
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
| FDS86141 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7A; 2.5W; SO8
Drain-source voltage: 100V
Drain current: 7A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.5nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7A; 2.5W; SO8
Drain-source voltage: 100V
Drain current: 7A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.5nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
| NCV7327D10R2G |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷18VDC; LIN; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 5...18V DC
Interface: LIN
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷18VDC; LIN; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 5...18V DC
Interface: LIN
Produkt ist nicht verfügbar
| NCV7327MW0R2G |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷18VDC; LIN; SMD; DFNW8; reel,tape
Type of integrated circuit: interface
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 5...18V DC
Interface: LIN
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷18VDC; LIN; SMD; DFNW8; reel,tape
Type of integrated circuit: interface
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 5...18V DC
Interface: LIN
Produkt ist nicht verfügbar
| ES3B |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Power dissipation: 1.66W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Power dissipation: 1.66W
Kind of package: reel; tape
Produkt ist nicht verfügbar
| NCP302045MNTWG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Case: PQFN31 5X5
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Output current: 45A
Type of integrated circuit: driver
Impulse rise time: 12ns
Pulse fall time: 6ns
Kind of integrated circuit: gate driver; high-side; low-side
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Case: PQFN31 5X5
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Output current: 45A
Type of integrated circuit: driver
Impulse rise time: 12ns
Pulse fall time: 6ns
Kind of integrated circuit: gate driver; high-side; low-side
Produkt ist nicht verfügbar
| NCP302150MNTWG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Case: PQFN31 5X5
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Output current: 50A
Type of integrated circuit: driver
Impulse rise time: 12ns
Pulse fall time: 6ns
Kind of integrated circuit: gate driver; high-side; low-side
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Case: PQFN31 5X5
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Output current: 50A
Type of integrated circuit: driver
Impulse rise time: 12ns
Pulse fall time: 6ns
Kind of integrated circuit: gate driver; high-side; low-side
Produkt ist nicht verfügbar
| NCP5183DR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Case: SO8
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Voltage class: 600V
Mounting: SMD
Supply voltage: 9...18V DC
Output current: -4.3...4.3A
Type of integrated circuit: driver
Impulse rise time: 40ns
Pulse fall time: 40ns
Kind of integrated circuit: gate driver; high-side; low-side
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Case: SO8
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Voltage class: 600V
Mounting: SMD
Supply voltage: 9...18V DC
Output current: -4.3...4.3A
Type of integrated circuit: driver
Impulse rise time: 40ns
Pulse fall time: 40ns
Kind of integrated circuit: gate driver; high-side; low-side
Produkt ist nicht verfügbar
| NCP81080DR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8
Case: SO8
Topology: MOSFET half-bridge
Operating temperature: -40...140°C
Mounting: SMD
Supply voltage: 5.5...20V DC
Output current: -800...500mA
Type of integrated circuit: driver
Impulse rise time: 19ns
Pulse fall time: 17ns
Kind of integrated circuit: gate driver; high-side
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8
Case: SO8
Topology: MOSFET half-bridge
Operating temperature: -40...140°C
Mounting: SMD
Supply voltage: 5.5...20V DC
Output current: -800...500mA
Type of integrated circuit: driver
Impulse rise time: 19ns
Pulse fall time: 17ns
Kind of integrated circuit: gate driver; high-side
auf Bestellung 810 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 46+ | 1.57 EUR |
| 51+ | 1.42 EUR |
| 64+ | 1.12 EUR |
| 68+ | 1.06 EUR |
| 500+ | 1.04 EUR |
| FOD0721 |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 3.75kV; 25Mbps; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 3.75kV
Transfer rate: 25Mbps
Case: SO8
Turn-on time: 5ns
Turn-off time: 4.5ns
Slew rate: 40kV/μs
Output voltage: -0.5...6.5V
Manufacturer series: FOD0721
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 3.75kV; 25Mbps; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 3.75kV
Transfer rate: 25Mbps
Case: SO8
Turn-on time: 5ns
Turn-off time: 4.5ns
Slew rate: 40kV/μs
Output voltage: -0.5...6.5V
Manufacturer series: FOD0721
Produkt ist nicht verfügbar
| FDMA905P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10A; 2.4W; WDFN6
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Drain current: -10A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: WDFN6
On-state resistance: 21mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10A; 2.4W; WDFN6
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Drain current: -10A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: WDFN6
On-state resistance: 21mΩ
Produkt ist nicht verfügbar
| FDMA410NZ |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.5A; 2.4W; WDFN6
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN6
On-state resistance: 32mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.5A; 2.4W; WDFN6
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN6
On-state resistance: 32mΩ
Produkt ist nicht verfügbar
| FDMA86551L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.5A; 2.4W; WDFN6
Kind of package: reel; tape
Case: WDFN6
Drain-source voltage: 60V
Drain current: 7.5A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.5A; 2.4W; WDFN6
Kind of package: reel; tape
Case: WDFN6
Drain-source voltage: 60V
Drain current: 7.5A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
| FDMA430NZ |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 2.4W; MicroFET
Mounting: SMD
Power dissipation: 2.4W
Gate charge: 11nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 61mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 2.4W; MicroFET
Mounting: SMD
Power dissipation: 2.4W
Gate charge: 11nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 61mΩ
Produkt ist nicht verfügbar
| FDMA8051L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; Idm: 80A; 2.4W; MicroFET
Case: MicroFET
Mounting: SMD
Drain current: 10A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 19mΩ
Pulsed drain current: 80A
Power dissipation: 2.4W
Gate charge: 20nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; Idm: 80A; 2.4W; MicroFET
Case: MicroFET
Mounting: SMD
Drain current: 10A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 19mΩ
Pulsed drain current: 80A
Power dissipation: 2.4W
Gate charge: 20nC
Polarisation: unipolar
Produkt ist nicht verfügbar
| FDMA8878 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2.4W; WDFN6
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: WDFN6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2.4W; WDFN6
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: WDFN6
Produkt ist nicht verfügbar
| FDMA908PZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -40A; 2.4W
Mounting: SMD
Pulsed drain current: -40A
Power dissipation: 2.4W
Gate charge: 34nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: -12A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 16mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -40A; 2.4W
Mounting: SMD
Pulsed drain current: -40A
Power dissipation: 2.4W
Gate charge: 34nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: -12A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 16mΩ
Produkt ist nicht verfügbar
| FDS4675 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; 2.4W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; 2.4W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 632 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 53+ | 1.37 EUR |
| 59+ | 1.22 EUR |
| 76+ | 0.94 EUR |
| 80+ | 0.9 EUR |
| NTD5C434NT4G |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; Idm: 900A; 2.4W; DPAK
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 2.4W
Gate charge: 80.6nC
Polarisation: unipolar
Drain current: 23A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 1.7mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; Idm: 900A; 2.4W; DPAK
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 2.4W
Gate charge: 80.6nC
Polarisation: unipolar
Drain current: 23A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 1.7mΩ
Produkt ist nicht verfügbar