NCP81080DR2G ONSEMI
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8
Case: SO8
Topology: MOSFET half-bridge
Operating temperature: -40...140°C
Mounting: SMD
Supply voltage: 5.5...20V DC
Output current: -800...500mA
Type of integrated circuit: driver
Impulse rise time: 19ns
Pulse fall time: 17ns
Kind of integrated circuit: gate driver; high-side
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8
Case: SO8
Topology: MOSFET half-bridge
Operating temperature: -40...140°C
Mounting: SMD
Supply voltage: 5.5...20V DC
Output current: -800...500mA
Type of integrated circuit: driver
Impulse rise time: 19ns
Pulse fall time: 17ns
Kind of integrated circuit: gate driver; high-side
Anzahl je Verpackung: 1 Stücke
auf Bestellung 810 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
46+ | 1.57 EUR |
51+ | 1.42 EUR |
64+ | 1.12 EUR |
68+ | 1.06 EUR |
500+ | 1.04 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NCP81080DR2G ONSEMI
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 140°C (TJ), Voltage - Supply: 5.5V ~ 20V, Input Type: TTL, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 19ns, 17ns, Channel Type: Synchronous, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Logic Voltage - VIL, VIH: 1.2V, 1.8V, Current - Peak Output (Source, Sink): 500mA, 800mA, DigiKey Programmable: Not Verified.
Weitere Produktangebote NCP81080DR2G nach Preis ab 0.98 EUR bis 2.48 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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NCP81080DR2G | Hersteller : ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8 Case: SO8 Topology: MOSFET half-bridge Operating temperature: -40...140°C Mounting: SMD Supply voltage: 5.5...20V DC Output current: -800...500mA Type of integrated circuit: driver Impulse rise time: 19ns Pulse fall time: 17ns Kind of integrated circuit: gate driver; high-side |
auf Bestellung 810 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP81080DR2G | Hersteller : onsemi | Gate Drivers LOW-COST HIGH VLTG GATE DRIVER |
auf Bestellung 2088 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP81080DR2G | Hersteller : ON Semiconductor | Gate Power Driver IC |
Produkt ist nicht verfügbar |
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NCP81080DR2G | Hersteller : onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 140°C (TJ) Voltage - Supply: 5.5V ~ 20V Input Type: TTL Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 19ns, 17ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.2V, 1.8V Current - Peak Output (Source, Sink): 500mA, 800mA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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NCP81080DR2G | Hersteller : onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 140°C (TJ) Voltage - Supply: 5.5V ~ 20V Input Type: TTL Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 19ns, 17ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.2V, 1.8V Current - Peak Output (Source, Sink): 500mA, 800mA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |