| Foto | Bezeichnung | Hersteller | Beschreibung |
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NVD5414NT4G-VF01 | onsemi |
 Description: MOSFET N-CH 60V 24A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 24A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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MB10S | onsemi |
Description: BRIDGE 1PH TO269AA/MINIDIL 1000V Packaging: Tape & Reel (TR) Package / Case: TO-269AA, 4-BESOP Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-SOIC Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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MB10S | onsemi |
Description: BRIDGE 1PH TO269AA/MINIDIL 1000V Packaging: Cut Tape (CT) Package / Case: TO-269AA, 4-BESOP Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-SOIC Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 2924 Stücke: Lieferzeit 10-14 Tag (e) |
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ARRAYJ-60035-4P-PCB | onsemi |
Description: SENSOR PHOTODIODE 420NM ARRAY Packaging: Bulk Package / Case: Array - 8 Element Wavelength: 420nm Mounting Type: Through Hole Active Area: 9mm² |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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ARRAYJ-60035-4P-BGA | onsemi |
Description: SENSOR PHOTODIODE 420NM 9EBGA Packaging: Bulk Package / Case: 9-EBGA Wavelength: 420nm Mounting Type: Surface Mount Active Area: 100mm² |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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ARRAYJ-60035-64P-PCB | onsemi |
Description: SENSOR PHOTODIODE 420NM ARRAY Packaging: Bulk Package / Case: Array - 8 Element Wavelength: 420nm Mounting Type: Through Hole Active Area: 9mm² |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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ARRAYC-60035-4P-BGA | onsemi |
Description: SENSOR PHOTODIODE 420NM 9EBGA Packaging: Bulk Package / Case: 9-EBGA Wavelength: 420nm Mounting Type: Surface Mount Active Area: 9mm² |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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ARRAYC-60035-64P-PCB | onsemi |
Description: SENSOR PHOTODIODE 420NM 84CLCC Packaging: Bulk Package / Case: 84-CLCC Window (J-Lead) Wavelength: 420nm Mounting Type: Surface Mount Active Area: 64mm² |
Produkt ist nicht verfügbar |
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TL431ACZ | onsemi |
Description: IC VREF SHUNT ADJ 1% TO92-3 Tolerance: ±1% Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Through Hole Reference Type: Shunt Operating Temperature: -25°C ~ 85°C (TA) Supplier Device Package: TO-92-3 Voltage - Output (Min/Fixed): 2.495V Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
Produkt ist nicht verfügbar |
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LM7815CT | onsemi |
Description: IC REG LINEAR 15V 1A TO220-3 Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 8 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 15V PSRR: 70dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
Produkt ist nicht verfügbar |
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FQPF4N90 | onsemi |
Description: MOSFET N-CH 900V 2.5A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.25A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
Produkt ist nicht verfügbar |
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RFG40N10 | onsemi |
Description: MOSFET N-CH 100V 40A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 20 V |
Produkt ist nicht verfügbar |
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BD241BTU | onsemi |
Description: TRANS NPN 80V 3A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 600mA, 3A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 40 W |
Produkt ist nicht verfügbar |
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ESD7321MUT5G | onsemi |
Description: TVS DIODE 7VWM 18VC 2X3DFN Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: USB Capacitance @ Frequency: 0.5pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 8A Voltage - Reverse Standoff (Typ): 7V (Max) Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Bidirectional Channels: 1 Voltage - Breakdown (Min): 8V Voltage - Clamping (Max) @ Ipp: 18V (Typ) Power Line Protection: No |
Produkt ist nicht verfügbar |
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ESD7321MUT5G | onsemi |
Description: TVS DIODE 7VWM 18VC 2X3DFN Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: USB Capacitance @ Frequency: 0.5pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 8A Voltage - Reverse Standoff (Typ): 7V (Max) Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Bidirectional Channels: 1 Voltage - Breakdown (Min): 8V Voltage - Clamping (Max) @ Ipp: 18V (Typ) Power Line Protection: No |
Produkt ist nicht verfügbar |
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BC858BMTF | onsemi |
Description: TRANS PNP 30V 0.1A SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 310 mW |
auf Bestellung 57000 Stücke: Lieferzeit 10-14 Tag (e) |
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BC858BMTF | onsemi |
Description: TRANS PNP 30V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 310 mW |
Produkt ist nicht verfügbar |
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BC858BMTF | onsemi |
Description: TRANS PNP 30V 0.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 310 mW |
Produkt ist nicht verfügbar |
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FQI50N06LTU | onsemi |
Description: MOSFET N-CH 60V 52.4A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52.4A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 26.2A, 10V Power Dissipation (Max): 3.75W (Ta), 121W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-262 (I2PAK) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQI50N06TU | onsemi |
Description: MOSFET N-CH 60V 50A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V Power Dissipation (Max): 3.75W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDPF035N06B-F152 | onsemi |
Description: MOSFET N-CH 60V 88A TO-220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 88A, 10V Power Dissipation (Max): 46.3W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V |
Produkt ist nicht verfügbar |
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NTMT045N065SC1 | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET - 3 Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 8mA Supplier Device Package: 4-TDFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V |
auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMT045N065SC1 | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET - 3 Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 8mA Supplier Device Package: 4-TDFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V |
auf Bestellung 51291 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBL045N065SC1 | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET - 3 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 8mA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22.6V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V |
auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBL045N065SC1 | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET - 3 Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 8mA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22.6V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V |
auf Bestellung 37784 Stücke: Lieferzeit 10-14 Tag (e) |
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NVH4L045N065SC1 | onsemi |
Description: SIC MOS TO247-4L 650V Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 8mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V Qualification: AEC-Q101 |
auf Bestellung 1344 Stücke: Lieferzeit 10-14 Tag (e) |
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FD6M045N06 | onsemi |
Description: MOSFET 2N-CH 60V 60A EPM15 Packaging: Tube Package / Case: EPM15 Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A Input Capacitance (Ciss) (Max) @ Vds: 3890pF @ 25V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: EPM15 |
Produkt ist nicht verfügbar |
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1N4738A | onsemi |
Description: DIODE ZENER 8.2V 1W DO41 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 4.5 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 6 V |
auf Bestellung 30302 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK932-22-TB-E | onsemi |
Description: JFET N-CH 50MA SMCP Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Current Drain (Id) - Max: 50 mA Supplier Device Package: SMCP Drain to Source Voltage (Vdss): 15 V Power - Max: 200 mW Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA Current - Drain (Idss) @ Vds (Vgs=0): 7.3 mA @ 5 V |
auf Bestellung 79414 Stücke: Lieferzeit 10-14 Tag (e) |
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DM7474N | onsemi |
Description: IC FF D-TYPE DUAL 1BIT 14DIP Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Output Type: Complementary Mounting Type: Through Hole Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.75V ~ 5.25V Current - Quiescent (Iq): 30 mA Current - Output High, Low: 400µA, 16mA Trigger Type: Positive Edge Clock Frequency: 15 MHz Supplier Device Package: 14-MDIP Max Propagation Delay @ V, Max CL: 40ns @ 5V, 15pF Number of Bits per Element: 1 |
Produkt ist nicht verfügbar |
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| NCP729FC25T2G | onsemi |
Description: IC REG LINEAR 2.5V 200MA 4CSP Packaging: Tape & Reel (TR) Package / Case: 4-WFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 50 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-CSP (1.06x1.06) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable PSRR: 74dB (56dB (100Hz ~ 10kHz) Voltage Dropout (Max): 0.14V @ 200mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Current - Supply (Max): 200 µA |
Produkt ist nicht verfügbar |
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| NCP729FC18T2G | onsemi |
Description: IC REG LINEAR 1.8V 200MA 4CSP Packaging: Tape & Reel (TR) Package / Case: 4-WFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 50 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-CSP (1.06x1.06) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable PSRR: 74dB (56dB (100Hz ~ 10kHz) Voltage Dropout (Max): 0.22V @ 200mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Current - Supply (Max): 200 µA |
Produkt ist nicht verfügbar |
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| NCP729FC30T2G | onsemi |
Description: IC REG LINEAR 3V 200MA 4CSP Packaging: Bulk Package / Case: 4-WFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 50 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-CSP (1.06x1.06) Voltage - Output (Min/Fixed): 3V Control Features: Enable PSRR: 74dB (56dB (100Hz ~ 10kHz) Voltage Dropout (Max): 0.11V @ 200mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Current - Supply (Max): 200 µA |
auf Bestellung 105000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MPSA44 | onsemi |
Description: BJT TO92 400V NPN 0.625W Packaging: Bulk |
Produkt ist nicht verfügbar |
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FJN13003TA | onsemi |
Description: TRANS NPN 400V 1.5A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 500mA, 2V Frequency - Transition: 4MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 1.1 W |
Produkt ist nicht verfügbar |
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FJN13003TA | onsemi |
Description: TRANS NPN 400V 1.5A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 500mA, 2V Frequency - Transition: 4MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 1.1 W |
Produkt ist nicht verfügbar |
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BD1396STU | onsemi |
Description: TRANS NPN 80V 1.5A TO126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.25 W |
auf Bestellung 2277 Stücke: Lieferzeit 10-14 Tag (e) |
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NB4L16MMNR2G | onsemi |
Description: IC TRANSLTR UNIDIRECTIONAL 16QFN Packaging: Tape & Reel (TR) Package / Case: 16-VFQFN Exposed Pad Output Type: Differential Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 5Gbps Supplier Device Package: 16-QFN (3x3) Channel Type: Unidirectional Output Signal: CML Translator Type: Mixed Signal Channels per Circuit: 1 Input Signal: CML, HSTL, LVCMOS, LVDS, LVPECL, LVTTL Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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NB4L16MMNR2G | onsemi |
Description: IC TRANSLTR UNIDIRECTIONAL 16QFN Packaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad Output Type: Differential Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 5Gbps Supplier Device Package: 16-QFN (3x3) Channel Type: Unidirectional Output Signal: CML Translator Type: Mixed Signal Channels per Circuit: 1 Input Signal: CML, HSTL, LVCMOS, LVDS, LVPECL, LVTTL Number of Circuits: 1 |
auf Bestellung 2985 Stücke: Lieferzeit 10-14 Tag (e) |
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MBRF20100CT | onsemi |
 Description: DIODE ARR SCHOT 100V 10A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FP Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 100 V |
auf Bestellung 93756 Stücke: Lieferzeit 10-14 Tag (e) |
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MBRF20100CT | onsemi |
Description: DIODE ARR SCHOT 100V 10A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FP Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 100 V |
Produkt ist nicht verfügbar |
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MMBT2222A | onsemi |
Description: BJT SOT23 40V NPN 0.25W 150C Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
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MMBT2222A | onsemi |
Description: BJT SOT23 40V NPN 0.25W 150C Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
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MC33275MN-3.0R2G | onsemi |
Description: IC REG LINEAR 3V 300MA 8DFN Packaging: Bulk Package / Case: 8-VDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 13V Number of Regulators: 1 Supplier Device Package: 8-DFN (4x4) Voltage - Output (Min/Fixed): 3V PSRR: 75dB (120Hz) Voltage Dropout (Max): 0.5V @ 300mA Protection Features: Over Current, Over Temperature |
auf Bestellung 43421 Stücke: Lieferzeit 10-14 Tag (e) |
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NJW0281G | onsemi |
Description: TRANS NPN 250V 15A TO3P-3L Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-3P-3L Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 150 W |
auf Bestellung 411 Stücke: Lieferzeit 10-14 Tag (e) |
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DM74S08N | onsemi |
Description: IC GATE AND 4CH 2-INP 14MDIP Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Logic Type: AND Gate Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Current - Output High, Low: 1mA, 20mA Number of Inputs: 2 Supplier Device Package: 14-MDIP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF Number of Circuits: 4 |
Produkt ist nicht verfügbar |
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DM74AS08MX | onsemi |
Description: IC GATE AND 4CH 2-INP 14SOIC Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 2mA, 20mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF Number of Circuits: 4 |
Produkt ist nicht verfügbar |
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DM74AS08N | onsemi |
Description: IC GATE AND 4CH 2-INP 14MDIP Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Logic Type: AND Gate Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 2mA, 20mA Number of Inputs: 2 Supplier Device Package: 14-MDIP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF Number of Circuits: 4 |
Produkt ist nicht verfügbar |
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DM74AS04N | onsemi |
Description: IC INVERTER 6CH 1-INP 14MDIP Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Logic Type: Inverter Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 2mA, 20mA Number of Inputs: 1 Supplier Device Package: 14-MDIP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF Number of Circuits: 6 |
Produkt ist nicht verfügbar |
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DM74AS04MX | onsemi |
Description: IC INVERTER 6CH 1-INP 14SOIC Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 2mA, 20mA Number of Inputs: 1 Supplier Device Package: 14-SOIC Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF Number of Circuits: 6 |
Produkt ist nicht verfügbar |
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DM74ALS00AN | onsemi |
Description: IC GATE NAND 4CH 2-INP 14MDIP Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Logic Type: NAND Gate Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 400µA, 8mA Number of Inputs: 2 Supplier Device Package: 14-MDIP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF Number of Circuits: 4 |
Produkt ist nicht verfügbar |
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DM74ALS00ASJX | onsemi |
Description: IC GATE NAND 4CH 2-INP 14SOP Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 400µA, 8mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF Number of Circuits: 4 |
Produkt ist nicht verfügbar |
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DM74ALS00AMX | onsemi |
Description: IC GATE NAND 4CH 2-INP 14SOIC Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 400µA, 8mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF Number of Circuits: 4 |
Produkt ist nicht verfügbar |
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MC74VHC32DTR2G-Q | onsemi |
Description: 2-1 QUAD OR GATE Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
auf Bestellung 57500 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74VHC32DTR2G-Q | onsemi |
Description: 2-1 QUAD OR GATE Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
auf Bestellung 57500 Stücke: Lieferzeit 10-14 Tag (e) |
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LC72711LWHS-E | onsemi |
Description: RF DEMODULATOR IC 64SQFP Packaging: Tray Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
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1N5338B | onsemi |
Description: DIODE ZENER 5.1V 5W AXIAL Tolerance: ±5% Packaging: Bulk Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 1.5 Ohms Supplier Device Package: Axial Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1 V |
Produkt ist nicht verfügbar |
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LA5587-E | onsemi |
Description: GENERAL-PURPOSE COMPACT DC MOTOR Packaging: Bulk |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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LM350T | onsemi |
Description: IC REG LINEAR POS ADJ 3A TO220-3 Packaging: Tube Package / Case: TO-220-3 Output Type: Adjustable Mounting Type: Through Hole Current - Output: 3A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Max): 33V Voltage - Output (Min/Fixed): 1.2V PSRR: 80dB (120Hz) Protection Features: Over Temperature, Short Circuit |
Produkt ist nicht verfügbar |
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| 2N2222A | onsemi |
Description: TRANS NPN 40V 0.8A TO18 Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
| NVD5414NT4G-VF01 |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 24A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 24A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
| MB10S |
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Hersteller: onsemi
Description: BRIDGE 1PH TO269AA/MINIDIL 1000V
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE 1PH TO269AA/MINIDIL 1000V
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
| MB10S |
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Hersteller: onsemi
Description: BRIDGE 1PH TO269AA/MINIDIL 1000V
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE 1PH TO269AA/MINIDIL 1000V
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 2924 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 1.58 EUR |
| 18+ | 0.99 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.45 EUR |
| ARRAYJ-60035-4P-PCB |
|
Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM ARRAY
Packaging: Bulk
Package / Case: Array - 8 Element
Wavelength: 420nm
Mounting Type: Through Hole
Active Area: 9mm²
Description: SENSOR PHOTODIODE 420NM ARRAY
Packaging: Bulk
Package / Case: Array - 8 Element
Wavelength: 420nm
Mounting Type: Through Hole
Active Area: 9mm²
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 1120.17 EUR |
| ARRAYJ-60035-4P-BGA |
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Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM 9EBGA
Packaging: Bulk
Package / Case: 9-EBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Active Area: 100mm²
Description: SENSOR PHOTODIODE 420NM 9EBGA
Packaging: Bulk
Package / Case: 9-EBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Active Area: 100mm²
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 1404.32 EUR |
| ARRAYJ-60035-64P-PCB |
|
Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM ARRAY
Packaging: Bulk
Package / Case: Array - 8 Element
Wavelength: 420nm
Mounting Type: Through Hole
Active Area: 9mm²
Description: SENSOR PHOTODIODE 420NM ARRAY
Packaging: Bulk
Package / Case: Array - 8 Element
Wavelength: 420nm
Mounting Type: Through Hole
Active Area: 9mm²
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5306.12 EUR |
| ARRAYC-60035-4P-BGA |
|
Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM 9EBGA
Packaging: Bulk
Package / Case: 9-EBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Active Area: 9mm²
Description: SENSOR PHOTODIODE 420NM 9EBGA
Packaging: Bulk
Package / Case: 9-EBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Active Area: 9mm²
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 313.79 EUR |
| ARRAYC-60035-64P-PCB |
|
Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM 84CLCC
Packaging: Bulk
Package / Case: 84-CLCC Window (J-Lead)
Wavelength: 420nm
Mounting Type: Surface Mount
Active Area: 64mm²
Description: SENSOR PHOTODIODE 420NM 84CLCC
Packaging: Bulk
Package / Case: 84-CLCC Window (J-Lead)
Wavelength: 420nm
Mounting Type: Surface Mount
Active Area: 64mm²
Produkt ist nicht verfügbar
| TL431ACZ |
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Hersteller: onsemi
Description: IC VREF SHUNT ADJ 1% TO92-3
Tolerance: ±1%
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 1% TO92-3
Tolerance: ±1%
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
| LM7815CT |
|
Hersteller: onsemi
Description: IC REG LINEAR 15V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 15V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
| FQPF4N90 |
|
Hersteller: onsemi
Description: MOSFET N-CH 900V 2.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.25A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET N-CH 900V 2.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.25A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
| RFG40N10 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 20 V
Description: MOSFET N-CH 100V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 20 V
Produkt ist nicht verfügbar
| BD241BTU |
|
Hersteller: onsemi
Description: TRANS NPN 80V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 600mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Description: TRANS NPN 80V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 600mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Produkt ist nicht verfügbar
| ESD7321MUT5G |
|
Hersteller: onsemi
Description: TVS DIODE 7VWM 18VC 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.5pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 7V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8V
Voltage - Clamping (Max) @ Ipp: 18V (Typ)
Power Line Protection: No
Description: TVS DIODE 7VWM 18VC 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.5pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 7V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8V
Voltage - Clamping (Max) @ Ipp: 18V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
| ESD7321MUT5G |
|
Hersteller: onsemi
Description: TVS DIODE 7VWM 18VC 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.5pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 7V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8V
Voltage - Clamping (Max) @ Ipp: 18V (Typ)
Power Line Protection: No
Description: TVS DIODE 7VWM 18VC 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.5pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 7V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8V
Voltage - Clamping (Max) @ Ipp: 18V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
| BC858BMTF |
|
Hersteller: onsemi
Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11539+ | 0.049 EUR |
| BC858BMTF |
|
Hersteller: onsemi
Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
Produkt ist nicht verfügbar
| BC858BMTF |
|
Hersteller: onsemi
Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
Produkt ist nicht verfügbar
| FQI50N06LTU |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 52.4A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 26.2A, 10V
Power Dissipation (Max): 3.75W (Ta), 121W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Description: MOSFET N-CH 60V 52.4A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 26.2A, 10V
Power Dissipation (Max): 3.75W (Ta), 121W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Produkt ist nicht verfügbar
| FQI50N06TU |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 50A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 25 V
Description: MOSFET N-CH 60V 50A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 25 V
Produkt ist nicht verfügbar
| FDPF035N06B-F152 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 88A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 88A, 10V
Power Dissipation (Max): 46.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V
Description: MOSFET N-CH 60V 88A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 88A, 10V
Power Dissipation (Max): 46.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V
Produkt ist nicht verfügbar
| NTMT045N065SC1 |
|
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 3
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
Description: SILICON CARBIDE (SIC) MOSFET - 3
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 10.23 EUR |
| NTMT045N065SC1 |
|
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 3
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
Description: SILICON CARBIDE (SIC) MOSFET - 3
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
auf Bestellung 51291 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 19.25 EUR |
| 10+ | 16.5 EUR |
| 100+ | 13.75 EUR |
| 500+ | 12.13 EUR |
| 1000+ | 10.92 EUR |
| NTBL045N065SC1 |
|
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22.6V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
Description: SILICON CARBIDE (SIC) MOSFET - 3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22.6V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 10.2 EUR |
| NTBL045N065SC1 |
|
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22.6V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
Description: SILICON CARBIDE (SIC) MOSFET - 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22.6V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
auf Bestellung 37784 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 17.3 EUR |
| 10+ | 15.24 EUR |
| 100+ | 13.18 EUR |
| 500+ | 11.95 EUR |
| 1000+ | 10.96 EUR |
| NVH4L045N065SC1 |
|
Hersteller: onsemi
Description: SIC MOS TO247-4L 650V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
Qualification: AEC-Q101
Description: SIC MOS TO247-4L 650V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 1344 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 28.85 EUR |
| 30+ | 23.35 EUR |
| 120+ | 21.98 EUR |
| 510+ | 19.92 EUR |
| FD6M045N06 |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 60A EPM15
Packaging: Tube
Package / Case: EPM15
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60A
Input Capacitance (Ciss) (Max) @ Vds: 3890pF @ 25V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: EPM15
Description: MOSFET 2N-CH 60V 60A EPM15
Packaging: Tube
Package / Case: EPM15
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60A
Input Capacitance (Ciss) (Max) @ Vds: 3890pF @ 25V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: EPM15
Produkt ist nicht verfügbar
| 1N4738A |
|
Hersteller: onsemi
Description: DIODE ZENER 8.2V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Description: DIODE ZENER 8.2V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
auf Bestellung 30302 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 46+ | 0.39 EUR |
| 75+ | 0.24 EUR |
| 119+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.096 EUR |
| 2000+ | 0.085 EUR |
| 5000+ | 0.073 EUR |
| 10000+ | 0.066 EUR |
| 2SK932-22-TB-E |
|
Hersteller: onsemi
Description: JFET N-CH 50MA SMCP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Current Drain (Id) - Max: 50 mA
Supplier Device Package: SMCP
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 7.3 mA @ 5 V
Description: JFET N-CH 50MA SMCP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Current Drain (Id) - Max: 50 mA
Supplier Device Package: SMCP
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 7.3 mA @ 5 V
auf Bestellung 79414 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1571+ | 0.31 EUR |
| DM7474N |
|
Hersteller: onsemi
Description: IC FF D-TYPE DUAL 1BIT 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: Complementary
Mounting Type: Through Hole
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Current - Quiescent (Iq): 30 mA
Current - Output High, Low: 400µA, 16mA
Trigger Type: Positive Edge
Clock Frequency: 15 MHz
Supplier Device Package: 14-MDIP
Max Propagation Delay @ V, Max CL: 40ns @ 5V, 15pF
Number of Bits per Element: 1
Description: IC FF D-TYPE DUAL 1BIT 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: Complementary
Mounting Type: Through Hole
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Current - Quiescent (Iq): 30 mA
Current - Output High, Low: 400µA, 16mA
Trigger Type: Positive Edge
Clock Frequency: 15 MHz
Supplier Device Package: 14-MDIP
Max Propagation Delay @ V, Max CL: 40ns @ 5V, 15pF
Number of Bits per Element: 1
Produkt ist nicht verfügbar
| NCP729FC25T2G |
Hersteller: onsemi
Description: IC REG LINEAR 2.5V 200MA 4CSP
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-CSP (1.06x1.06)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 74dB (56dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 0.14V @ 200mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 200 µA
Description: IC REG LINEAR 2.5V 200MA 4CSP
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-CSP (1.06x1.06)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 74dB (56dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 0.14V @ 200mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 200 µA
Produkt ist nicht verfügbar
| NCP729FC18T2G |
Hersteller: onsemi
Description: IC REG LINEAR 1.8V 200MA 4CSP
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-CSP (1.06x1.06)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 74dB (56dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 0.22V @ 200mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 200 µA
Description: IC REG LINEAR 1.8V 200MA 4CSP
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-CSP (1.06x1.06)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 74dB (56dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 0.22V @ 200mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 200 µA
Produkt ist nicht verfügbar
| NCP729FC30T2G |
Hersteller: onsemi
Description: IC REG LINEAR 3V 200MA 4CSP
Packaging: Bulk
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-CSP (1.06x1.06)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 74dB (56dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 0.11V @ 200mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 200 µA
Description: IC REG LINEAR 3V 200MA 4CSP
Packaging: Bulk
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-CSP (1.06x1.06)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 74dB (56dB (100Hz ~ 10kHz)
Voltage Dropout (Max): 0.11V @ 200mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 200 µA
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 566+ | 0.86 EUR |
| MPSA44 |
|
Produkt ist nicht verfügbar
| FJN13003TA |
|
Hersteller: onsemi
Description: TRANS NPN 400V 1.5A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 500mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.1 W
Description: TRANS NPN 400V 1.5A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 500mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.1 W
Produkt ist nicht verfügbar
| FJN13003TA |
|
Hersteller: onsemi
Description: TRANS NPN 400V 1.5A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 500mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.1 W
Description: TRANS NPN 400V 1.5A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 500mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.1 W
Produkt ist nicht verfügbar
| BD1396STU |
|
Hersteller: onsemi
Description: TRANS NPN 80V 1.5A TO126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
Description: TRANS NPN 80V 1.5A TO126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
auf Bestellung 2277 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1480+ | 0.32 EUR |
| NB4L16MMNR2G |
|
Hersteller: onsemi
Description: IC TRANSLTR UNIDIRECTIONAL 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Differential
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 5Gbps
Supplier Device Package: 16-QFN (3x3)
Channel Type: Unidirectional
Output Signal: CML
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: CML, HSTL, LVCMOS, LVDS, LVPECL, LVTTL
Number of Circuits: 1
Description: IC TRANSLTR UNIDIRECTIONAL 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Differential
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 5Gbps
Supplier Device Package: 16-QFN (3x3)
Channel Type: Unidirectional
Output Signal: CML
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: CML, HSTL, LVCMOS, LVDS, LVPECL, LVTTL
Number of Circuits: 1
Produkt ist nicht verfügbar
| NB4L16MMNR2G |
|
Hersteller: onsemi
Description: IC TRANSLTR UNIDIRECTIONAL 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Differential
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 5Gbps
Supplier Device Package: 16-QFN (3x3)
Channel Type: Unidirectional
Output Signal: CML
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: CML, HSTL, LVCMOS, LVDS, LVPECL, LVTTL
Number of Circuits: 1
Description: IC TRANSLTR UNIDIRECTIONAL 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Differential
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 5Gbps
Supplier Device Package: 16-QFN (3x3)
Channel Type: Unidirectional
Output Signal: CML
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: CML, HSTL, LVCMOS, LVDS, LVPECL, LVTTL
Number of Circuits: 1
auf Bestellung 2985 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 17.92 EUR |
| 10+ | 16.45 EUR |
| 25+ | 15.77 EUR |
| 100+ | 13.9 EUR |
| 250+ | 13.21 EUR |
| 500+ | 12.36 EUR |
| 1000+ | 11.34 EUR |
| MBRF20100CT | |
|
Hersteller: onsemi
Description: DIODE ARR SCHOT 100V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Description: DIODE ARR SCHOT 100V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
auf Bestellung 93756 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 278+ | 1.75 EUR |
| MBRF20100CT | |
|
Hersteller: onsemi
Description: DIODE ARR SCHOT 100V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Description: DIODE ARR SCHOT 100V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Produkt ist nicht verfügbar
| MMBT2222A |
|
Hersteller: onsemi
Description: BJT SOT23 40V NPN 0.25W 150C
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
Description: BJT SOT23 40V NPN 0.25W 150C
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
| MMBT2222A |
|
Hersteller: onsemi
Description: BJT SOT23 40V NPN 0.25W 150C
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
Description: BJT SOT23 40V NPN 0.25W 150C
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
| MC33275MN-3.0R2G |
|
Hersteller: onsemi
Description: IC REG LINEAR 3V 300MA 8DFN
Packaging: Bulk
Package / Case: 8-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 13V
Number of Regulators: 1
Supplier Device Package: 8-DFN (4x4)
Voltage - Output (Min/Fixed): 3V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3V 300MA 8DFN
Packaging: Bulk
Package / Case: 8-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 13V
Number of Regulators: 1
Supplier Device Package: 8-DFN (4x4)
Voltage - Output (Min/Fixed): 3V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 43421 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 474+ | 1.02 EUR |
| NJW0281G |
|
Hersteller: onsemi
Description: TRANS NPN 250V 15A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P-3L
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
Description: TRANS NPN 250V 15A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P-3L
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
auf Bestellung 411 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 6.58 EUR |
| 10+ | 4.33 EUR |
| 100+ | 3.05 EUR |
| DM74S08N |
|
Hersteller: onsemi
Description: IC GATE AND 4CH 2-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: 1mA, 20mA
Number of Inputs: 2
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Number of Circuits: 4
Description: IC GATE AND 4CH 2-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: 1mA, 20mA
Number of Inputs: 2
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Number of Circuits: 4
Produkt ist nicht verfügbar
| DM74AS08MX |
|
Hersteller: onsemi
Description: IC GATE AND 4CH 2-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 20mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 4
Description: IC GATE AND 4CH 2-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 20mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 4
Produkt ist nicht verfügbar
| DM74AS08N |
|
Hersteller: onsemi
Description: IC GATE AND 4CH 2-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 20mA
Number of Inputs: 2
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 4
Description: IC GATE AND 4CH 2-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 20mA
Number of Inputs: 2
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 4
Produkt ist nicht verfügbar
| DM74AS04N |
|
Hersteller: onsemi
Description: IC INVERTER 6CH 1-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: Inverter
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 20mA
Number of Inputs: 1
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Number of Circuits: 6
Description: IC INVERTER 6CH 1-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: Inverter
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 20mA
Number of Inputs: 1
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Number of Circuits: 6
Produkt ist nicht verfügbar
| DM74AS04MX |
|
Hersteller: onsemi
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 20mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Number of Circuits: 6
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 20mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Number of Circuits: 6
Produkt ist nicht verfügbar
| DM74ALS00AN |
|
Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Number of Circuits: 4
Description: IC GATE NAND 4CH 2-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Number of Circuits: 4
Produkt ist nicht verfügbar
| DM74ALS00ASJX |
|
Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Number of Circuits: 4
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Number of Circuits: 4
Produkt ist nicht verfügbar
| DM74ALS00AMX |
|
Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Number of Circuits: 4
Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Number of Circuits: 4
Produkt ist nicht verfügbar
| MC74VHC32DTR2G-Q |
|
Hersteller: onsemi
Description: 2-1 QUAD OR GATE
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: 2-1 QUAD OR GATE
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 57500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.36 EUR |
| 5000+ | 0.35 EUR |
| 12500+ | 0.33 EUR |
| MC74VHC32DTR2G-Q |
|
Hersteller: onsemi
Description: 2-1 QUAD OR GATE
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: 2-1 QUAD OR GATE
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 57500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 1.72 EUR |
| 18+ | 1.01 EUR |
| 25+ | 0.84 EUR |
| 100+ | 0.65 EUR |
| 250+ | 0.56 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.46 EUR |
| 1N5338B |
|
Hersteller: onsemi
Description: DIODE ZENER 5.1V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 1.5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Description: DIODE ZENER 5.1V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 1.5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Produkt ist nicht verfügbar
| LA5587-E |
|
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1268+ | 0.39 EUR |
| LM350T |
|
Hersteller: onsemi
Description: IC REG LINEAR POS ADJ 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 3A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Max): 33V
Voltage - Output (Min/Fixed): 1.2V
PSRR: 80dB (120Hz)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR POS ADJ 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 3A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Max): 33V
Voltage - Output (Min/Fixed): 1.2V
PSRR: 80dB (120Hz)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
| 2N2222A |
|
Hersteller: onsemi
Description: TRANS NPN 40V 0.8A TO18
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Description: TRANS NPN 40V 0.8A TO18
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Produkt ist nicht verfügbar