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NTMT045N065SC1

NTMT045N065SC1 onsemi

ntmt045n065sc1-d.pdf Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 3
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+10.23 EUR
Mindestbestellmenge: 3000
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Technische Details NTMT045N065SC1 onsemi

Description: SILICON CARBIDE (SIC) MOSFET - 3, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V, Power Dissipation (Max): 187W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 8mA, Supplier Device Package: 4-TDFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V.

Weitere Produktangebote NTMT045N065SC1 nach Preis ab 10.92 EUR bis 19.47 EUR

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NTMT045N065SC1 NTMT045N065SC1 Hersteller : onsemi ntmt045n065sc1-d.pdf Description: SILICON CARBIDE (SIC) MOSFET - 3
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
auf Bestellung 51291 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+19.25 EUR
10+ 16.5 EUR
100+ 13.75 EUR
500+ 12.13 EUR
1000+ 10.92 EUR
NTMT045N065SC1 NTMT045N065SC1 Hersteller : onsemi NTMT045N065SC1_D-3150585.pdf SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, Power88
auf Bestellung 6118 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+19.47 EUR
10+ 16.68 EUR
25+ 15.82 EUR
100+ 13.92 EUR
250+ 13.45 EUR
500+ 12.51 EUR
1000+ 11.26 EUR
NTMT045N065SC1 Hersteller : ON Semiconductor ntmt045n065sc1-d.pdf Trans MOSFET N-CH SiC 650V 55A 4-Pin TDFN EP T/R
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