Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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HCPL2731 | ONSEMI |
![]() ![]() Description: Optocoupler; THT; Ch: 2; OUT: Darlington; CTR@If: 500%@1.6mA; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: Darlington CTR@If: 500%@1.6mA Transfer rate: 0.1Mbps Case: DIP8 Turn-on time: 20µs Turn-off time: 35µs Slew rate: 2.5kV/μs |
Produkt ist nicht verfügbar |
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FDMT1D3N08B | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 864A; 178W; PQFN8 Mounting: SMD Case: PQFN8 Power dissipation: 178W Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 260nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 864A Drain-source voltage: 80V Drain current: 103A On-state resistance: 2.2mΩ |
Produkt ist nicht verfügbar |
HCPL2731 | ![]() |
![]() |
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; CTR@If: 500%@1.6mA; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: Darlington
CTR@If: 500%@1.6mA
Transfer rate: 0.1Mbps
Case: DIP8
Turn-on time: 20µs
Turn-off time: 35µs
Slew rate: 2.5kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; CTR@If: 500%@1.6mA; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: Darlington
CTR@If: 500%@1.6mA
Transfer rate: 0.1Mbps
Case: DIP8
Turn-on time: 20µs
Turn-off time: 35µs
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
FDMT1D3N08B |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 864A; 178W; PQFN8
Mounting: SMD
Case: PQFN8
Power dissipation: 178W
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 260nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 864A
Drain-source voltage: 80V
Drain current: 103A
On-state resistance: 2.2mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 864A; 178W; PQFN8
Mounting: SMD
Case: PQFN8
Power dissipation: 178W
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 260nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 864A
Drain-source voltage: 80V
Drain current: 103A
On-state resistance: 2.2mΩ
Produkt ist nicht verfügbar