Produkte > NXP USA INC. > Alle Produkte des Herstellers NXP USA INC. (35281) > Seite 78 nach 589
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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PIP3115-B,118 | NXP USA Inc. |
Description: IC PWR DRIVER N-CHAN 1:1 D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Output Configuration: Low Side Rds On (Typ): 68mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: D2PAK Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Obsolete |
Produkt ist nicht verfügbar |
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PIP3119-P,127 | NXP USA Inc. |
Description: IC PWR DRIVER N-CHAN 1:1 TO220AB Packaging: Tube Package / Case: TO-220-3 Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Output Configuration: Low Side Rds On (Typ): 22mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 20A Ratio - Input:Output: 1:1 Supplier Device Package: TO-220AB Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Obsolete |
Produkt ist nicht verfügbar |
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PIP3201-A,127 | NXP USA Inc. |
Description: IC PWR DRVR N-CH 1:1 SOT263B-01 Packaging: Tube Package / Case: TO-220-5 Formed Leads Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Output Configuration: High Side Rds On (Typ): 28mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 35V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 20A Ratio - Input:Output: 1:1 Supplier Device Package: SOT263B-01 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Obsolete |
Produkt ist nicht verfügbar |
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PIP3207-DC,118 | NXP USA Inc. |
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Output Configuration: High Side Rds On (Typ): 30mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 35V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 16A Ratio - Input:Output: 1:1 Supplier Device Package: D2PAK-7 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Obsolete |
Produkt ist nicht verfügbar |
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PIP3208-A,127 | NXP USA Inc. |
Description: IC PWR SWITCH N-CH 1:1 SOT263B Packaging: Tube Package / Case: TO-220-5 Formed Leads Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Output Configuration: High Side Rds On (Typ): 135mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 35V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 6A Ratio - Input:Output: 1:1 Supplier Device Package: SOT263B-01 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Obsolete |
Produkt ist nicht verfügbar |
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PIP3209-R,118 | NXP USA Inc. |
Description: IC PWR SWITCH N-CHAN 1:1 SOT426 Packaging: Tape & Reel (TR) Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Output Configuration: High Side Rds On (Typ): 135mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 35V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 6A Ratio - Input:Output: 1:1 Supplier Device Package: D2PAK Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Obsolete |
Produkt ist nicht verfügbar |
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PIP3210-R,118 | NXP USA Inc. | Description: IC PWR SWITCH N-CHAN 1:1 SOT426 |
Produkt ist nicht verfügbar |
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PMBFJ177,215 | NXP USA Inc. |
Description: JFET P-CH 30V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS) Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: SOT-23 (TO-236AB) Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Power - Max: 300 mW Resistance - RDS(On): 300 Ohms Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V |
Produkt ist nicht verfügbar |
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PDTC144WS,126 | NXP USA Inc. |
Description: TRANS PREBIAS NPN 50V TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms |
Produkt ist nicht verfügbar |
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PDTD113EK,115 | NXP USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.5A SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V Supplier Device Package: SMT3; MPAK Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
Produkt ist nicht verfügbar |
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PDTD113ZK,115 | NXP USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.5A SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: SMT3; MPAK Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms |
Produkt ist nicht verfügbar |
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PDTD123EK,115 | NXP USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.5A SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Supplier Device Package: SMT3; MPAK Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
Produkt ist nicht verfügbar |
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PDTD123YK,115 | NXP USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.5A SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: SMT3; MPAK Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms |
Produkt ist nicht verfügbar |
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BC327-25,112 | NXP USA Inc. |
Description: BJT TO92 45V PNP 0.625W 150C Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 80MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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BC327-40,112 | NXP USA Inc. |
Description: BJT TO92 45V PNP 0.625W 150C Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 80MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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BC546B,126 | NXP USA Inc. |
Description: TRANS NPN 65V 0.1A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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BC557C,112 | NXP USA Inc. |
Description: BJT TO92 45V 100MA PNP 0.5W 150C Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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PN2369A,126 | NXP USA Inc. |
Description: TRANS NPN 15V 0.2A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 350mV Frequency - Transition: 500MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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BFG198,115 | NXP USA Inc. |
Description: RF TRANS NPN 10V 8GHZ SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 1W Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Frequency - Transition: 8GHz Supplier Device Package: SC-73 |
Produkt ist nicht verfügbar |
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BFG520,215 | NXP USA Inc. |
Description: RF TRANS NPN 15V 9GHZ SOT143B Packaging: Tape & Reel (TR) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz Supplier Device Package: SOT-143B |
Produkt ist nicht verfügbar |
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BFG540,215 | NXP USA Inc. |
Description: RF TRANS NPN 15V 9GHZ SOT143B Packaging: Tape & Reel (TR) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 400mW Current - Collector (Ic) (Max): 120mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 900MHz Supplier Device Package: SOT-143B Part Status: Obsolete |
Produkt ist nicht verfügbar |
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BFG67,215 | NXP USA Inc. |
Description: RF TRANS NPN 10V 8GHZ SOT143B Packaging: Tape & Reel (TR) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz Supplier Device Package: SOT-143B Part Status: Obsolete |
Produkt ist nicht verfügbar |
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BFG67/X,215 | NXP USA Inc. |
Description: RF TRANS NPN 10V 8GHZ SOT143B Packaging: Tape & Reel (TR) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.3dB @ 1GHz Supplier Device Package: SOT-143B Part Status: Obsolete |
Produkt ist nicht verfügbar |
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BFM505,115 | NXP USA Inc. |
Description: RF TRANS 2 NPN 8V 9GHZ 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 175°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 18mA Voltage - Collector Emitter Breakdown (Max): 8V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 1.9dB @ 900MHz ~ 2GHz Supplier Device Package: 6-TSSOP Part Status: Obsolete |
Produkt ist nicht verfügbar |
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BFQ19,115 | NXP USA Inc. |
Description: RF TRANS NPN 15V 5.5GHZ SOT89-3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 1W Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 70mA, 10V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 3.3dB @ 500MHz Supplier Device Package: SOT-89-3 |
Produkt ist nicht verfügbar |
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BFQ540,115 | NXP USA Inc. |
Description: RF TRANS NPN 15V 9GHZ SOT89-3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 1.2W Current - Collector (Ic) (Max): 120mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.9dB ~ 2.4dB @ 900MHz Supplier Device Package: SOT-89-3 |
Produkt ist nicht verfügbar |
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BFR505T,115 | NXP USA Inc. |
Description: RF TRANS NPN 15V 9GHZ SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 18mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz Supplier Device Package: SC-75 |
Produkt ist nicht verfügbar |
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BFR520T,115 | NXP USA Inc. |
Description: RF TRANS NPN 15V 9GHZ SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz Supplier Device Package: SC-75 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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BLF1820-90,112 | NXP USA Inc. | Description: TRANSISTOR RF LDMOS SOT502A |
Produkt ist nicht verfügbar |
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BLS2731-10,114 | NXP USA Inc. |
Description: RF TRANS NPN 75V 3.1GHZ CDFM2 Packaging: Tray Package / Case: SOT-445C Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 10dB Power - Max: 145W Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 75V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 5V Frequency - Transition: 3.1GHz Supplier Device Package: CDFM2 |
Produkt ist nicht verfügbar |
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BLS3135-10,114 | NXP USA Inc. |
Description: RF TRANS NPN 75V 3.5GHZ CDFM2 Packaging: Tray Package / Case: SOT-445C Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 9dB Power - Max: 34W Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 75V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 5V Frequency - Transition: 3.5GHz Supplier Device Package: CDFM2 |
Produkt ist nicht verfügbar |
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BLS3135-20,114 | NXP USA Inc. |
Description: RF TRANS NPN 75V 3.5GHZ CDFM2 Packaging: Tray Package / Case: SOT-422A Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 8dB Power - Max: 80W Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 75V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V Frequency - Transition: 3.5GHz Supplier Device Package: CDFM2 |
Produkt ist nicht verfügbar |
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BLS3135-50,114 | NXP USA Inc. |
Description: RF TRANS NPN 75V 3.5GHZ CDFM2 Packaging: Tray Package / Case: SOT-422A Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 8dB Power - Max: 80W Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 75V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V Frequency - Transition: 3.5GHz Supplier Device Package: CDFM2 |
Produkt ist nicht verfügbar |
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BLS3135-65,114 | NXP USA Inc. |
Description: RF TRANS NPN 75V 3.5GHZ CDFM2 Packaging: Tray Package / Case: SOT-422A Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 7dB Power - Max: 200W Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 75V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 5V Frequency - Transition: 3.5GHz Supplier Device Package: CDFM2 |
Produkt ist nicht verfügbar |
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PRF947,115 | NXP USA Inc. |
Description: RF TRANS NPN 10V 8.5GHZ SOT323-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 250mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V Frequency - Transition: 8.5GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz Supplier Device Package: SC-70 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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BF1204,115 | NXP USA Inc. |
Description: FET RF 10V 400MHZ 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Current Rating (Amps): 30mA Mounting Type: Surface Mount Frequency: 400MHz Configuration: N-Channel Dual Gate Gain: 30dB Technology: MOSFET Noise Figure: 0.9dB Supplier Device Package: 6-TSSOP Part Status: Obsolete Voltage - Rated: 10 V Voltage - Test: 5 V Current - Test: 12 mA |
Produkt ist nicht verfügbar |
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BF1205C,115 | NXP USA Inc. |
Description: RF MOSFET 5V 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Current Rating (Amps): 30mA Mounting Type: Surface Mount Frequency: 400MHz Configuration: N-Channel Dual Gate Gain: 30dB Technology: MOSFET (Metal Oxide) Noise Figure: 1.3dB Supplier Device Package: 6-TSSOP Voltage - Rated: 6 V Voltage - Test: 5 V Current - Test: 19 mA |
Produkt ist nicht verfügbar |
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BSH205,215 | NXP USA Inc. |
Description: MOSFET P-CH 12V 750MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 430mA, 4.5V Power Dissipation (Max): 417mW (Ta) Vgs(th) (Max) @ Id: 680mV @ 1mA (Typ) Supplier Device Package: SOT-23 (TO-236AB) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 9.6 V |
Produkt ist nicht verfügbar |
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PH3075L,115 | NXP USA Inc. |
Description: MOSFET N-CH 75V 30A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 25 V |
Produkt ist nicht verfügbar |
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PH3330L,115 | NXP USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 12 V |
Produkt ist nicht verfügbar |
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PH3855L,115 | NXP USA Inc. |
Description: MOSFET N-CH 55V 24A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 15A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 25 V |
Produkt ist nicht verfügbar |
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PH8030L,115 | NXP USA Inc. |
Description: MOSFET N-CH 30V 76.7A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76.7A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 12 V |
Produkt ist nicht verfügbar |
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PHB108NQ03LT,118 | NXP USA Inc. |
Description: MOSFET N-CH 25V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V |
Produkt ist nicht verfügbar |
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PHB110NQ08LT,118 | NXP USA Inc. |
Description: MOSFET N-CH 75V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 127.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6631 pF @ 25 V |
Produkt ist nicht verfügbar |
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PHB112N06T,118 | NXP USA Inc. |
Description: MOSFET N-CH 55V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4352 pF @ 25 V |
Produkt ist nicht verfügbar |
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PHB153NQ08LT,118 | NXP USA Inc. | Description: MOSFET N-CH 75V 75A D2PAK |
Produkt ist nicht verfügbar |
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PHB160NQ08T,118 | NXP USA Inc. |
Description: MOSFET N-CH 75V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5585 pF @ 25 V |
Produkt ist nicht verfügbar |
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PHB55N03LTA,118 | NXP USA Inc. |
Description: MOSFET N-CH 25V 55A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V |
Produkt ist nicht verfügbar |
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PHD108NQ03LT,118 | NXP USA Inc. |
Description: MOSFET N-CH 25V 75A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V |
Produkt ist nicht verfügbar |
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PHD16N03T,118 | NXP USA Inc. | Description: MOSFET N-CH 30V 13.1A DPAK |
Produkt ist nicht verfügbar |
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PHD34NQ10T,118 | NXP USA Inc. |
Description: MOSFET N-CH 100V 35A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1704 pF @ 25 V |
Produkt ist nicht verfügbar |
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PHD36N03LT,118 | NXP USA Inc. |
Description: MOSFET N-CH 30V 43.4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.4A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V Power Dissipation (Max): 57.6W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V |
Produkt ist nicht verfügbar |
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PHD82NQ03LT,118 | NXP USA Inc. |
Description: MOSFET N-CH 30V 75A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V |
Produkt ist nicht verfügbar |
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PHK24NQ04LT,518 | NXP USA Inc. |
Description: MOSFET N-CH 40V 21.2A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 14A, 10V Power Dissipation (Max): 6.25W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2985 pF @ 25 V |
Produkt ist nicht verfügbar |
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PHN210,118 | NXP USA Inc. | Description: MOSFET 2N-CH 30V 8SOIC |
Produkt ist nicht verfügbar |
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PHP110NQ08LT,127 | NXP USA Inc. |
Description: MOSFET N-CH 75V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 127.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6631 pF @ 25 V |
Produkt ist nicht verfügbar |
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PHP110NQ08T,127 | NXP USA Inc. |
Description: MOSFET N-CH 75V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 113.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 25 V |
Produkt ist nicht verfügbar |
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PHP160NQ08T,127 | NXP USA Inc. |
Description: MOSFET N-CH 75V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5585 pF @ 25 V |
Produkt ist nicht verfügbar |
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PHP21N06T,127 | NXP USA Inc. |
Description: MOSFET N-CH 55V 21A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
Produkt ist nicht verfügbar |
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PHP45N03LTA,127 | NXP USA Inc. |
Description: MOSFET N-CH 25V 40A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 25A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
Produkt ist nicht verfügbar |
PIP3115-B,118 |
Hersteller: NXP USA Inc.
Description: IC PWR DRIVER N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 68mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Description: IC PWR DRIVER N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 68mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
PIP3119-P,127 |
Hersteller: NXP USA Inc.
Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 22mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220AB
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 22mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220AB
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
PIP3201-A,127 |
Hersteller: NXP USA Inc.
Description: IC PWR DRVR N-CH 1:1 SOT263B-01
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 28mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT263B-01
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
Description: IC PWR DRVR N-CH 1:1 SOT263B-01
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 28mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT263B-01
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
PIP3207-DC,118 |
Hersteller: NXP USA Inc.
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 16A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK-7
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 16A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK-7
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
PIP3208-A,127 |
Hersteller: NXP USA Inc.
Description: IC PWR SWITCH N-CH 1:1 SOT263B
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 135mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT263B-01
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
Description: IC PWR SWITCH N-CH 1:1 SOT263B
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 135mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT263B-01
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
PIP3209-R,118 |
Hersteller: NXP USA Inc.
Description: IC PWR SWITCH N-CHAN 1:1 SOT426
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 135mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
Description: IC PWR SWITCH N-CHAN 1:1 SOT426
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 135mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
PIP3210-R,118 |
Hersteller: NXP USA Inc.
Description: IC PWR SWITCH N-CHAN 1:1 SOT426
Description: IC PWR SWITCH N-CHAN 1:1 SOT426
Produkt ist nicht verfügbar
PMBFJ177,215 |
Hersteller: NXP USA Inc.
Description: JFET P-CH 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 300 mW
Resistance - RDS(On): 300 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
Description: JFET P-CH 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 300 mW
Resistance - RDS(On): 300 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
Produkt ist nicht verfügbar
PDTC144WS,126 |
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
PDTD113EK,115 |
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Produkt ist nicht verfügbar
PDTD113ZK,115 |
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
PDTD123EK,115 |
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Produkt ist nicht verfügbar
PDTD123YK,115 |
Hersteller: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
BC327-25,112 |
Hersteller: NXP USA Inc.
Description: BJT TO92 45V PNP 0.625W 150C
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: BJT TO92 45V PNP 0.625W 150C
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
BC327-40,112 |
Hersteller: NXP USA Inc.
Description: BJT TO92 45V PNP 0.625W 150C
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: BJT TO92 45V PNP 0.625W 150C
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
BC546B,126 |
Hersteller: NXP USA Inc.
Description: TRANS NPN 65V 0.1A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS NPN 65V 0.1A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
BC557C,112 |
Hersteller: NXP USA Inc.
Description: BJT TO92 45V 100MA PNP 0.5W 150C
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Description: BJT TO92 45V 100MA PNP 0.5W 150C
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
PN2369A,126 |
Hersteller: NXP USA Inc.
Description: TRANS NPN 15V 0.2A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 350mV
Frequency - Transition: 500MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
Description: TRANS NPN 15V 0.2A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 350mV
Frequency - Transition: 500MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
BFG198,115 |
Hersteller: NXP USA Inc.
Description: RF TRANS NPN 10V 8GHZ SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Frequency - Transition: 8GHz
Supplier Device Package: SC-73
Description: RF TRANS NPN 10V 8GHZ SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Frequency - Transition: 8GHz
Supplier Device Package: SC-73
Produkt ist nicht verfügbar
BFG520,215 |
Hersteller: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143B
Description: RF TRANS NPN 15V 9GHZ SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-143B
Produkt ist nicht verfügbar
BFG540,215 |
Hersteller: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 900MHz
Supplier Device Package: SOT-143B
Part Status: Obsolete
Description: RF TRANS NPN 15V 9GHZ SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 900MHz
Supplier Device Package: SOT-143B
Part Status: Obsolete
Produkt ist nicht verfügbar
BFG67,215 |
Hersteller: NXP USA Inc.
Description: RF TRANS NPN 10V 8GHZ SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
Supplier Device Package: SOT-143B
Part Status: Obsolete
Description: RF TRANS NPN 10V 8GHZ SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
Supplier Device Package: SOT-143B
Part Status: Obsolete
Produkt ist nicht verfügbar
BFG67/X,215 |
Hersteller: NXP USA Inc.
Description: RF TRANS NPN 10V 8GHZ SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB @ 1GHz
Supplier Device Package: SOT-143B
Part Status: Obsolete
Description: RF TRANS NPN 10V 8GHZ SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB @ 1GHz
Supplier Device Package: SOT-143B
Part Status: Obsolete
Produkt ist nicht verfügbar
BFM505,115 |
Hersteller: NXP USA Inc.
Description: RF TRANS 2 NPN 8V 9GHZ 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 175°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 18mA
Voltage - Collector Emitter Breakdown (Max): 8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.9dB @ 900MHz ~ 2GHz
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Description: RF TRANS 2 NPN 8V 9GHZ 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 175°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 18mA
Voltage - Collector Emitter Breakdown (Max): 8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.9dB @ 900MHz ~ 2GHz
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
BFQ19,115 |
Hersteller: NXP USA Inc.
Description: RF TRANS NPN 15V 5.5GHZ SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 70mA, 10V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 3.3dB @ 500MHz
Supplier Device Package: SOT-89-3
Description: RF TRANS NPN 15V 5.5GHZ SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 70mA, 10V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 3.3dB @ 500MHz
Supplier Device Package: SOT-89-3
Produkt ist nicht verfügbar
BFQ540,115 |
Hersteller: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 2.4dB @ 900MHz
Supplier Device Package: SOT-89-3
Description: RF TRANS NPN 15V 9GHZ SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 2.4dB @ 900MHz
Supplier Device Package: SOT-89-3
Produkt ist nicht verfügbar
BFR505T,115 |
Hersteller: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 18mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
Supplier Device Package: SC-75
Description: RF TRANS NPN 15V 9GHZ SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 18mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
Supplier Device Package: SC-75
Produkt ist nicht verfügbar
BFR520T,115 |
Hersteller: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SC-75
Part Status: Obsolete
Description: RF TRANS NPN 15V 9GHZ SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Supplier Device Package: SC-75
Part Status: Obsolete
Produkt ist nicht verfügbar
BLF1820-90,112 |
Hersteller: NXP USA Inc.
Description: TRANSISTOR RF LDMOS SOT502A
Description: TRANSISTOR RF LDMOS SOT502A
Produkt ist nicht verfügbar
BLS2731-10,114 |
Hersteller: NXP USA Inc.
Description: RF TRANS NPN 75V 3.1GHZ CDFM2
Packaging: Tray
Package / Case: SOT-445C
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 10dB
Power - Max: 145W
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 5V
Frequency - Transition: 3.1GHz
Supplier Device Package: CDFM2
Description: RF TRANS NPN 75V 3.1GHZ CDFM2
Packaging: Tray
Package / Case: SOT-445C
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 10dB
Power - Max: 145W
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 5V
Frequency - Transition: 3.1GHz
Supplier Device Package: CDFM2
Produkt ist nicht verfügbar
BLS3135-10,114 |
Hersteller: NXP USA Inc.
Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-445C
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 9dB
Power - Max: 34W
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-445C
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 9dB
Power - Max: 34W
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
Produkt ist nicht verfügbar
BLS3135-20,114 |
Hersteller: NXP USA Inc.
Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-422A
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8dB
Power - Max: 80W
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-422A
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8dB
Power - Max: 80W
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
Produkt ist nicht verfügbar
BLS3135-50,114 |
Hersteller: NXP USA Inc.
Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-422A
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8dB
Power - Max: 80W
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-422A
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8dB
Power - Max: 80W
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
Produkt ist nicht verfügbar
BLS3135-65,114 |
Hersteller: NXP USA Inc.
Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-422A
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 7dB
Power - Max: 200W
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
Description: RF TRANS NPN 75V 3.5GHZ CDFM2
Packaging: Tray
Package / Case: SOT-422A
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 7dB
Power - Max: 200W
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 75V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: CDFM2
Produkt ist nicht verfügbar
PRF947,115 |
Hersteller: NXP USA Inc.
Description: RF TRANS NPN 10V 8.5GHZ SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Description: RF TRANS NPN 10V 8.5GHZ SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Produkt ist nicht verfügbar
BF1204,115 |
Hersteller: NXP USA Inc.
Description: FET RF 10V 400MHZ 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
Description: FET RF 10V 400MHZ 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: 6-TSSOP
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
Produkt ist nicht verfügbar
BF1205C,115 |
Hersteller: NXP USA Inc.
Description: RF MOSFET 5V 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: 6-TSSOP
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 19 mA
Description: RF MOSFET 5V 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: 6-TSSOP
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 19 mA
Produkt ist nicht verfügbar
BSH205,215 |
Hersteller: NXP USA Inc.
Description: MOSFET P-CH 12V 750MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 430mA, 4.5V
Power Dissipation (Max): 417mW (Ta)
Vgs(th) (Max) @ Id: 680mV @ 1mA (Typ)
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 9.6 V
Description: MOSFET P-CH 12V 750MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 430mA, 4.5V
Power Dissipation (Max): 417mW (Ta)
Vgs(th) (Max) @ Id: 680mV @ 1mA (Typ)
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 9.6 V
Produkt ist nicht verfügbar
PH3075L,115 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 75V 30A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 25 V
Description: MOSFET N-CH 75V 30A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 25 V
Produkt ist nicht verfügbar
PH3330L,115 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 12 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 12 V
Produkt ist nicht verfügbar
PH3855L,115 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 55V 24A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 25 V
Description: MOSFET N-CH 55V 24A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 25 V
Produkt ist nicht verfügbar
PH8030L,115 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 30V 76.7A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76.7A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 12 V
Description: MOSFET N-CH 30V 76.7A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76.7A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 12 V
Produkt ist nicht verfügbar
PHB108NQ03LT,118 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V
Description: MOSFET N-CH 25V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V
Produkt ist nicht verfügbar
PHB110NQ08LT,118 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 75V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 127.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6631 pF @ 25 V
Description: MOSFET N-CH 75V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 127.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6631 pF @ 25 V
Produkt ist nicht verfügbar
PHB112N06T,118 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4352 pF @ 25 V
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4352 pF @ 25 V
Produkt ist nicht verfügbar
PHB153NQ08LT,118 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 75V 75A D2PAK
Description: MOSFET N-CH 75V 75A D2PAK
Produkt ist nicht verfügbar
PHB160NQ08T,118 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 75V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5585 pF @ 25 V
Description: MOSFET N-CH 75V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5585 pF @ 25 V
Produkt ist nicht verfügbar
PHB55N03LTA,118 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 55A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Description: MOSFET N-CH 25V 55A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Produkt ist nicht verfügbar
PHD108NQ03LT,118 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V
Description: MOSFET N-CH 25V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V
Produkt ist nicht verfügbar
PHD16N03T,118 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 30V 13.1A DPAK
Description: MOSFET N-CH 30V 13.1A DPAK
Produkt ist nicht verfügbar
PHD34NQ10T,118 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 100V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1704 pF @ 25 V
Description: MOSFET N-CH 100V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1704 pF @ 25 V
Produkt ist nicht verfügbar
PHD36N03LT,118 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 30V 43.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.4A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 57.6W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
Description: MOSFET N-CH 30V 43.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.4A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 57.6W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
Produkt ist nicht verfügbar
PHD82NQ03LT,118 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 30V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
Description: MOSFET N-CH 30V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
Produkt ist nicht verfügbar
PHK24NQ04LT,518 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 40V 21.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 14A, 10V
Power Dissipation (Max): 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2985 pF @ 25 V
Description: MOSFET N-CH 40V 21.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 14A, 10V
Power Dissipation (Max): 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2985 pF @ 25 V
Produkt ist nicht verfügbar
PHP110NQ08LT,127 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 127.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6631 pF @ 25 V
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 127.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6631 pF @ 25 V
Produkt ist nicht verfügbar
PHP110NQ08T,127 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 113.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 25 V
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 113.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 25 V
Produkt ist nicht verfügbar
PHP160NQ08T,127 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5585 pF @ 25 V
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5585 pF @ 25 V
Produkt ist nicht verfügbar
PHP21N06T,127 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 55V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Description: MOSFET N-CH 55V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Produkt ist nicht verfügbar
PHP45N03LTA,127 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET N-CH 25V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Produkt ist nicht verfügbar