| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| BUK7Y43-60EX | NEXPERIA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 15.5A; Idm: 87A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15.5A Pulsed drain current: 87A Power dissipation: 45W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 96mΩ Mounting: SMD Gate charge: 10.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK7Y59-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 67A; 37W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11.9A Pulsed drain current: 67A Power dissipation: 37W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 132mΩ Mounting: SMD Gate charge: 7.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK7Y6R0-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 85A; Idm: 482A; 195W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 85A Pulsed drain current: 482A Power dissipation: 195W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 45.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BZB984-C3V3,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.425W; 3.3V; SMD; reel,tape; SOT663; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.425W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT663 Max. load current: 0.2A Semiconductor structure: common anode; double Leakage current: 5µA |
Produkt ist nicht verfügbar |
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BZT52H-C3V3,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.375/0.83W; 3.3V; SMD; reel,tape; SOD123F Type of diode: Zener Power dissipation: 0.375/0.83W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD123F Max. load current: 0.25A Semiconductor structure: single diode |
auf Bestellung 1970 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84J-B3V3,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.55W; 3.3V; SMD; reel,tape; SOD323F; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.55W Zener voltage: 3.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD323F Max. load current: 0.25A Semiconductor structure: single diode |
auf Bestellung 2530 Stücke: Lieferzeit 14-21 Tag (e) |
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| 74AUP1T50GXH | NEXPERIA |
Category: Level translators Description: IC: digital; buffer,Schmitt trigger,translator; Ch: 1; CMOS; SMD Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Technology: CMOS Kind of integrated circuit: buffer; Schmitt trigger; translator Family: AUP Case: X2SON5 Number of inputs: 1 Supply voltage: 2.3...3.6V DC Type of integrated circuit: digital Number of channels: 1 |
Produkt ist nicht verfügbar |
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1PS302,115 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 200mA; 4ns; SOT323; Ufmax: 1.2V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: double series Features of semiconductor devices: fast switching Case: SOT323 Max. forward voltage: 1.2V Max. forward impulse current: 4A Kind of package: reel; tape |
auf Bestellung 4083 Stücke: Lieferzeit 14-21 Tag (e) |
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PUMX1,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.1A; 300mW; SC88,SOT363,TSSOP6 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 1250 Stücke: Lieferzeit 14-21 Tag (e) |
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| BZX84-C3V0.215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 3V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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| BUK7M9R5-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 38.5A; Idm: 218A; 55W Application: automotive industry Mounting: SMD Drain-source voltage: 40V Drain current: 38.5A On-state resistance: 18.4mΩ Type of transistor: N-MOSFET Power dissipation: 55W Polarisation: unipolar Kind of package: reel; tape Gate charge: 18nC Kind of channel: enhanced Pulsed drain current: 218A Case: LFPAK33; SOT1210 |
Produkt ist nicht verfügbar |
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74HC257D,652 | NEXPERIA |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer; Ch: 4; IN: 2; CMOS; SMD; SO16; 2÷6VDC; HC Type of integrated circuit: digital Kind of integrated circuit: multiplexer Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO16 Supply voltage: 2...6V DC Family: HC Kind of package: tube Operating temperature: -40...125°C Kind of output: 3-state |
Produkt ist nicht verfügbar |
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| PSMN1R5-40YSDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 202A; Idm: 1145A Case: LFPAK56; PowerSO8; SOT669 Mounting: SMD Kind of package: reel; tape Technology: NextPowerS3 Kind of channel: enhanced Pulsed drain current: 1145A Drain-source voltage: 40V Drain current: 202A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 238W Polarisation: unipolar Gate charge: 99nC Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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74HCT126PW,118 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting,line driver; Ch: 4; SMD; TSSOP14 Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Number of channels: 4 Mounting: SMD Case: TSSOP14 Kind of output: 3-state Kind of package: reel; tape Family: HCT |
Produkt ist nicht verfügbar |
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| 74AVCH16T245DGG,18 | NEXPERIA |
Category: Level translators Description: IC: digital; 16bit,3-state,transceiver,translator; Ch: 2; SMD Kind of output: 3-state Kind of package: reel; tape Technology: CMOS; TTL Kind of integrated circuit: 3-state; 16bit; transceiver; translator Family: AVCH Mounting: SMD Operating temperature: -40...125°C Case: TSSOP48 Supply voltage: 0.8...3.6V DC Type of integrated circuit: digital Number of channels: 2 |
Produkt ist nicht verfügbar |
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| BUK7K45-100EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 84A; 53W Drain-source voltage: 100V Drain current: 15A On-state resistance: 0.104Ω Type of transistor: N-MOSFET x2 Application: automotive industry Power dissipation: 53W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25.9nC Kind of channel: enhanced Pulsed drain current: 84A Mounting: SMD Case: LFPAK56D; SOT1205 |
Produkt ist nicht verfügbar |
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PDZ11B-QF | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.4W; 11V; SMD; reel,tape; SOD323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.4W Zener voltage: 11V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Max. load current: 0.2A Max. forward voltage: 0.9V Application: automotive industry |
Produkt ist nicht verfügbar |
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PDZ11B-QX | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.4W; 11V; SMD; reel,tape; SOD323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.4W Zener voltage: 11V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD323 Max. load current: 0.2A Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
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PDZ11B-QZ | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.4W; 11V; SMD; reel,tape; SOD323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.4W Zener voltage: 11V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD323 Max. load current: 0.2A Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
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PDZ11B,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.4W; 11V; SMD; reel,tape; SOD323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.4W Zener voltage: 11V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD323 Max. load current: 0.2A Semiconductor structure: single diode Leakage current: 0.1µA |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PDZ11BGWX | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.365W; 11V; SMD; reel,tape; SOD123; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.365W Zener voltage: 11V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD123 Max. load current: 0.2A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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TDZ11J,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 11V; SMD; reel,tape; SOD323F; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 1.1V Case: SOD323F Max. load current: 0.25A Semiconductor structure: single diode Leakage current: 0.1µA |
Produkt ist nicht verfügbar |
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74HCT30PW,112 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of package: tube Family: HCT |
auf Bestellung 375 Stücke: Lieferzeit 14-21 Tag (e) |
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74HCT30PW,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 40µA Delay time: 42ns Family: HCT |
Produkt ist nicht verfügbar |
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| PMH950UPEH | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -360mA; Idm: -2A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -360mA Pulsed drain current: -2A Case: DFN0606-3; SOT8001 Gate-source voltage: ±8V On-state resistance: 2.3Ω Mounting: SMD Gate charge: 0.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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| PMZ950UPELYL | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -300mA Pulsed drain current: -2A Case: DFN1006-3; SOT883 Gate-source voltage: ±8V On-state resistance: 2.1Ω Mounting: SMD Gate charge: 2.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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| PMZ950UPEYL | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -300mA Pulsed drain current: -2A Case: DFN1006-3; SOT883 Gate-source voltage: ±8V On-state resistance: 2.1Ω Mounting: SMD Gate charge: 2.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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| BZX84-C5V1.215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 5.1V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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PMN55ENEH | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.2A Pulsed drain current: 14A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PMN55ENEX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.2A Pulsed drain current: 14A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BAS16J.115 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 250mA; 4ns; SOD323F; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD323F Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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PDZ3.3B.115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.4W; 3.3V; SMD; reel,tape; SOD323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.4W Zener voltage: 3.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD323 Max. load current: 0.2A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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PSMN4R1-60YLX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 593A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 593A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1475 Stücke: Lieferzeit 14-21 Tag (e) |
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PZU15BA,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 230mW; 15V; SMD; reel,tape; SOD323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.23W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 1.1V Case: SOD323 Max. load current: 0.2A Semiconductor structure: single diode Leakage current: 50nA |
Produkt ist nicht verfügbar |
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| PSMN1R2-30YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 209A; Idm: 1181A; 194W Case: LFPAK56E; PowerSO8; SOT1023 Mounting: SMD On-state resistance: 2.05mΩ Kind of package: reel; tape Drain-source voltage: 30V Drain current: 209A Type of transistor: N-MOSFET Power dissipation: 194W Polarisation: unipolar Features of semiconductor devices: logic level Gate charge: 68nC Kind of channel: enhanced Pulsed drain current: 1181A |
Produkt ist nicht verfügbar |
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BZB84-C2V7,215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Leakage current: 20µA Kind of package: reel; tape Tolerance: ±5% Power dissipation: 0.3W Max. load current: 0.2A Max. forward voltage: 0.9V Zener voltage: 2.7V |
Produkt ist nicht verfügbar |
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| BZB984-C2V7,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.425W; 2.7V; SMD; reel,tape; SOT663; Ifmax: 200mA Type of diode: Zener Semiconductor structure: common anode; double Mounting: SMD Case: SOT663 Leakage current: 20µA Kind of package: reel; tape Tolerance: ±5% Power dissipation: 0.425W Max. load current: 0.2A Max. forward voltage: 0.9V Zener voltage: 2.7V |
Produkt ist nicht verfügbar |
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BZB84-C47,215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: common anode; double Leakage current: 50nA |
Produkt ist nicht verfügbar |
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| BUK7M8R0-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 48.8A; Idm: 276A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 48.8A Pulsed drain current: 276A Power dissipation: 75W Case: LFPAK33; SOT1210 On-state resistance: 15.8mΩ Mounting: SMD Gate charge: 23.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK7S0R7-40HJ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 425A; Idm: 1983A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 425A Pulsed drain current: 1983A Power dissipation: 375W Case: LFPAK88; SOT1235 On-state resistance: 1.53mΩ Mounting: SMD Gate charge: 202nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK7S1R0-40HJ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 325A; Idm: 1659A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 325A Pulsed drain current: 1659A Power dissipation: 375W Case: LFPAK88; SOT1235 On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 137nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK7Y08-40B,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 58.85A; Idm: 332A; 105W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 58.85A Pulsed drain current: 332A Power dissipation: 105W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 36.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK7Y21-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 23A; Idm: 132A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 23A Pulsed drain current: 132A Power dissipation: 45W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 41.4mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK7Y29-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 102A; 37W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 18A Pulsed drain current: 102A Power dissipation: 37W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 57.1mΩ Mounting: SMD Gate charge: 7.9nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK7Y3R5-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 93A; Idm: 526A; 115W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 93A Pulsed drain current: 526A Power dissipation: 115W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 6.7mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK7Y7R0-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 48A Pulsed drain current: 272A Power dissipation: 64W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 13.6mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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HEF4104BT,652 | NEXPERIA |
Category: Level translators Description: IC: digital; bus transceiver,logic level voltage translator Type of integrated circuit: digital Kind of integrated circuit: bus transceiver; logic level voltage translator Number of channels: 4 Technology: CMOS Mounting: SMD Case: SO16 Kind of package: tube Family: HEF4000B |
Produkt ist nicht verfügbar |
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| 74AUP2G14GM,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; inverter,Schmitt trigger; NOT; Ch: 2; IN: 1; CMOS; SMD Manufacturer series: Mini Logic Operating temperature: -40...125°C Mounting: SMD Supply voltage: 0.8...3.6V DC Number of inputs: 1 Family: AUP Kind of gate: NOT Technology: CMOS Kind of integrated circuit: inverter; Schmitt trigger Case: XSON6 Type of integrated circuit: digital Number of channels: 2 Kind of package: reel; tape Kind of input: with Schmitt trigger |
Produkt ist nicht verfügbar |
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| 74AUP2G14GN,132 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; inverter,Schmitt trigger; NOT; Ch: 2; IN: 1; CMOS; SMD Manufacturer series: Mini Logic Operating temperature: -40...125°C Mounting: SMD Supply voltage: 0.8...3.6V DC Number of inputs: 1 Family: AUP Kind of gate: NOT Technology: CMOS Kind of integrated circuit: inverter; Schmitt trigger Case: XSON6 Type of integrated circuit: digital Number of channels: 2 Kind of package: reel; tape Kind of input: with Schmitt trigger |
Produkt ist nicht verfügbar |
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| 74AUP2G14GS,132 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; inverter,Schmitt trigger; NOT; Ch: 2; IN: 1; CMOS; SMD Manufacturer series: Mini Logic Operating temperature: -40...125°C Mounting: SMD Supply voltage: 0.8...3.6V DC Number of inputs: 1 Family: AUP Kind of gate: NOT Technology: CMOS Kind of integrated circuit: inverter; Schmitt trigger Case: XSON6 Type of integrated circuit: digital Number of channels: 2 Kind of package: reel; tape Kind of input: with Schmitt trigger |
Produkt ist nicht verfügbar |
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|
BF823,215 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 250V; 50mA; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 50mA Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 60MHz |
auf Bestellung 3314 Stücke: Lieferzeit 14-21 Tag (e) |
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74HCT173D,652 | NEXPERIA |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 4; CMOS,TTL; SMD; SO16; tube; HCT Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 4 Technology: CMOS; TTL Mounting: SMD Case: SO16 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of package: tube Family: HCT Trigger: positive-edge-triggered |
auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) |
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| 74AUP1G157GXZ | NEXPERIA |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer; IN: 2; CMOS; SMD; X2SON6; 800mVDC÷3.6VDC Type of integrated circuit: digital Kind of integrated circuit: multiplexer Number of inputs: 2 Technology: CMOS Mounting: SMD Case: X2SON6 Supply voltage: 0.8...3.6V DC Family: AUP Kind of package: reel; tape Operating temperature: -40...125°C Kind of input: with Schmitt trigger |
Produkt ist nicht verfügbar |
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| BUK7M27-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 21.3A; Idm: 121A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 21.3A Pulsed drain current: 121A Power dissipation: 62W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 19.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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BUK7Y14-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 46A; Idm: 259A; 147W Kind of package: reel; tape On-state resistance: 35.1mΩ Drain current: 46A Drain-source voltage: 80V Case: LFPAK56; PowerSO8; SOT669 Gate charge: 44.8nC Mounting: SMD Kind of channel: enhanced Type of transistor: N-MOSFET Pulsed drain current: 259A Application: automotive industry Power dissipation: 147W Polarisation: unipolar |
auf Bestellung 1437 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK7Y25-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 27.5A; Idm: 156A; 95W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 27.5A Pulsed drain current: 156A Power dissipation: 95W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 62.75mΩ Mounting: SMD Gate charge: 25.9nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK7Y41-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 18A; Idm: 100A; 64W Case: LFPAK56; PowerSO8; SOT669 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 80V Drain current: 18A On-state resistance: 103mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 64W Polarisation: unipolar Gate charge: 16.4nC Kind of channel: enhanced Pulsed drain current: 100A |
Produkt ist nicht verfügbar |
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BUK7Y72-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 11A; Idm: 63A; 45W Kind of package: reel; tape On-state resistance: 181mΩ Drain current: 11A Drain-source voltage: 80V Case: LFPAK56; PowerSO8; SOT669 Gate charge: 9.8nC Mounting: SMD Kind of channel: enhanced Type of transistor: N-MOSFET Pulsed drain current: 63A Application: automotive industry Power dissipation: 45W Polarisation: unipolar |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK7Y7R8-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 441A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 78A Pulsed drain current: 441A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 19.6mΩ Mounting: SMD Gate charge: 63.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| BUK7Y9R9-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 63A; Idm: 354A; 195W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 63A Pulsed drain current: 354A Power dissipation: 195W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 24.9mΩ Mounting: SMD Gate charge: 51.6nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
| BUK7Y43-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15.5A; Idm: 87A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15.5A
Pulsed drain current: 87A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15.5A; Idm: 87A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15.5A
Pulsed drain current: 87A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK7Y59-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 67A; 37W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Pulsed drain current: 67A
Power dissipation: 37W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 132mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 67A; 37W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Pulsed drain current: 67A
Power dissipation: 37W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 132mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK7Y6R0-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 85A; Idm: 482A; 195W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 85A
Pulsed drain current: 482A
Power dissipation: 195W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 45.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 85A; Idm: 482A; 195W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 85A
Pulsed drain current: 482A
Power dissipation: 195W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 45.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BZB984-C3V3,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.425W; 3.3V; SMD; reel,tape; SOT663; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.425W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT663
Max. load current: 0.2A
Semiconductor structure: common anode; double
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.425W; 3.3V; SMD; reel,tape; SOT663; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.425W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT663
Max. load current: 0.2A
Semiconductor structure: common anode; double
Leakage current: 5µA
Produkt ist nicht verfügbar
| BZT52H-C3V3,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.375/0.83W; 3.3V; SMD; reel,tape; SOD123F
Type of diode: Zener
Power dissipation: 0.375/0.83W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD123F
Max. load current: 0.25A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.375/0.83W; 3.3V; SMD; reel,tape; SOD123F
Type of diode: Zener
Power dissipation: 0.375/0.83W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD123F
Max. load current: 0.25A
Semiconductor structure: single diode
auf Bestellung 1970 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 313+ | 0.23 EUR |
| 451+ | 0.16 EUR |
| 703+ | 0.1 EUR |
| 933+ | 0.077 EUR |
| 1092+ | 0.065 EUR |
| 1292+ | 0.055 EUR |
| 1970+ | 0.036 EUR |
| BZX84J-B3V3,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 3.3V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.55W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323F
Max. load current: 0.25A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 3.3V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.55W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323F
Max. load current: 0.25A
Semiconductor structure: single diode
auf Bestellung 2530 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 605+ | 0.12 EUR |
| 1195+ | 0.06 EUR |
| 1330+ | 0.054 EUR |
| 1640+ | 0.044 EUR |
| 1735+ | 0.041 EUR |
| 74AUP1T50GXH |
|
Hersteller: NEXPERIA
Category: Level translators
Description: IC: digital; buffer,Schmitt trigger,translator; Ch: 1; CMOS; SMD
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of integrated circuit: buffer; Schmitt trigger; translator
Family: AUP
Case: X2SON5
Number of inputs: 1
Supply voltage: 2.3...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Category: Level translators
Description: IC: digital; buffer,Schmitt trigger,translator; Ch: 1; CMOS; SMD
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of integrated circuit: buffer; Schmitt trigger; translator
Family: AUP
Case: X2SON5
Number of inputs: 1
Supply voltage: 2.3...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Produkt ist nicht verfügbar
| 1PS302,115 |
|
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 200mA; 4ns; SOT323; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Case: SOT323
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 200mA; 4ns; SOT323; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Case: SOT323
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Kind of package: reel; tape
auf Bestellung 4083 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 417+ | 0.17 EUR |
| 760+ | 0.094 EUR |
| 915+ | 0.078 EUR |
| 1695+ | 0.042 EUR |
| 1793+ | 0.04 EUR |
| PUMX1,115 |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.1A; 300mW; SC88,SOT363,TSSOP6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.1A; 300mW; SC88,SOT363,TSSOP6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1250 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 295+ | 0.24 EUR |
| 435+ | 0.16 EUR |
| 674+ | 0.11 EUR |
| 817+ | 0.088 EUR |
| 1250+ | 0.057 EUR |
| BZX84-C3V0.215 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| BUK7M9R5-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 38.5A; Idm: 218A; 55W
Application: automotive industry
Mounting: SMD
Drain-source voltage: 40V
Drain current: 38.5A
On-state resistance: 18.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Kind of channel: enhanced
Pulsed drain current: 218A
Case: LFPAK33; SOT1210
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 38.5A; Idm: 218A; 55W
Application: automotive industry
Mounting: SMD
Drain-source voltage: 40V
Drain current: 38.5A
On-state resistance: 18.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Kind of channel: enhanced
Pulsed drain current: 218A
Case: LFPAK33; SOT1210
Produkt ist nicht verfügbar
| 74HC257D,652 |
|
Hersteller: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 2; CMOS; SMD; SO16; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO16
Supply voltage: 2...6V DC
Family: HC
Kind of package: tube
Operating temperature: -40...125°C
Kind of output: 3-state
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 2; CMOS; SMD; SO16; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO16
Supply voltage: 2...6V DC
Family: HC
Kind of package: tube
Operating temperature: -40...125°C
Kind of output: 3-state
Produkt ist nicht verfügbar
| PSMN1R5-40YSDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 202A; Idm: 1145A
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Kind of package: reel; tape
Technology: NextPowerS3
Kind of channel: enhanced
Pulsed drain current: 1145A
Drain-source voltage: 40V
Drain current: 202A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 238W
Polarisation: unipolar
Gate charge: 99nC
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 202A; Idm: 1145A
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Kind of package: reel; tape
Technology: NextPowerS3
Kind of channel: enhanced
Pulsed drain current: 1145A
Drain-source voltage: 40V
Drain current: 202A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 238W
Polarisation: unipolar
Gate charge: 99nC
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| 74HCT126PW,118 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 4; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Kind of package: reel; tape
Family: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 4; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Kind of package: reel; tape
Family: HCT
Produkt ist nicht verfügbar
| 74AVCH16T245DGG,18 |
|
Hersteller: NEXPERIA
Category: Level translators
Description: IC: digital; 16bit,3-state,transceiver,translator; Ch: 2; SMD
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; 16bit; transceiver; translator
Family: AVCH
Mounting: SMD
Operating temperature: -40...125°C
Case: TSSOP48
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 2
Category: Level translators
Description: IC: digital; 16bit,3-state,transceiver,translator; Ch: 2; SMD
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: 3-state; 16bit; transceiver; translator
Family: AVCH
Mounting: SMD
Operating temperature: -40...125°C
Case: TSSOP48
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 2
Produkt ist nicht verfügbar
| BUK7K45-100EX |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 84A; 53W
Drain-source voltage: 100V
Drain current: 15A
On-state resistance: 0.104Ω
Type of transistor: N-MOSFET x2
Application: automotive industry
Power dissipation: 53W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.9nC
Kind of channel: enhanced
Pulsed drain current: 84A
Mounting: SMD
Case: LFPAK56D; SOT1205
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 84A; 53W
Drain-source voltage: 100V
Drain current: 15A
On-state resistance: 0.104Ω
Type of transistor: N-MOSFET x2
Application: automotive industry
Power dissipation: 53W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.9nC
Kind of channel: enhanced
Pulsed drain current: 84A
Mounting: SMD
Case: LFPAK56D; SOT1205
Produkt ist nicht verfügbar
| PDZ11B-QF |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 11V; SMD; reel,tape; SOD323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 11V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Max. load current: 0.2A
Max. forward voltage: 0.9V
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 11V; SMD; reel,tape; SOD323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 11V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Max. load current: 0.2A
Max. forward voltage: 0.9V
Application: automotive industry
Produkt ist nicht verfügbar
| PDZ11B-QX |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 11V; SMD; reel,tape; SOD323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 11V; SMD; reel,tape; SOD323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
| PDZ11B-QZ |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 11V; SMD; reel,tape; SOD323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 11V; SMD; reel,tape; SOD323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
| PDZ11B,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 11V; SMD; reel,tape; SOD323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.2A
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 11V; SMD; reel,tape; SOD323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.2A
Semiconductor structure: single diode
Leakage current: 0.1µA
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1425+ | 0.051 EUR |
| 1675+ | 0.043 EUR |
| 2000+ | 0.036 EUR |
| 2875+ | 0.025 EUR |
| 3000+ | 0.024 EUR |
| PDZ11BGWX |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.365W; 11V; SMD; reel,tape; SOD123; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.365W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD123
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.365W; 11V; SMD; reel,tape; SOD123; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.365W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD123
Max. load current: 0.2A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| TDZ11J,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 11V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1.1V
Case: SOD323F
Max. load current: 0.25A
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 11V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1.1V
Case: SOD323F
Max. load current: 0.25A
Semiconductor structure: single diode
Leakage current: 0.1µA
Produkt ist nicht verfügbar
| 74HCT30PW,112 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: tube
Family: HCT
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: tube
Family: HCT
auf Bestellung 375 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 274+ | 0.26 EUR |
| 375+ | 0.19 EUR |
| 74HCT30PW,118 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Delay time: 42ns
Family: HCT
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Delay time: 42ns
Family: HCT
Produkt ist nicht verfügbar
| PMH950UPEH |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -360mA; Idm: -2A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -360mA
Pulsed drain current: -2A
Case: DFN0606-3; SOT8001
Gate-source voltage: ±8V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -360mA; Idm: -2A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -360mA
Pulsed drain current: -2A
Case: DFN0606-3; SOT8001
Gate-source voltage: ±8V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| PMZ950UPELYL |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -300mA
Pulsed drain current: -2A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -300mA
Pulsed drain current: -2A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| PMZ950UPEYL |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -300mA
Pulsed drain current: -2A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -300mA
Pulsed drain current: -2A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| BZX84-C5V1.215 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.1V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.1V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| PMN55ENEH |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PMN55ENEX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BAS16J.115 |
|
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 4ns; SOD323F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323F
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 4ns; SOD323F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323F
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Produkt ist nicht verfügbar
| PDZ3.3B.115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 3.3V; SMD; reel,tape; SOD323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 3.3V; SMD; reel,tape; SOD323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.2A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| PSMN4R1-60YLX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 593A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 593A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 593A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 593A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1475 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 40+ | 1.79 EUR |
| 46+ | 1.57 EUR |
| 66+ | 1.09 EUR |
| 70+ | 1.03 EUR |
| PZU15BA,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 230mW; 15V; SMD; reel,tape; SOD323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.23W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 1.1V
Case: SOD323
Max. load current: 0.2A
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 230mW; 15V; SMD; reel,tape; SOD323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.23W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 1.1V
Case: SOD323
Max. load current: 0.2A
Semiconductor structure: single diode
Leakage current: 50nA
Produkt ist nicht verfügbar
| PSMN1R2-30YLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 209A; Idm: 1181A; 194W
Case: LFPAK56E; PowerSO8; SOT1023
Mounting: SMD
On-state resistance: 2.05mΩ
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 209A
Type of transistor: N-MOSFET
Power dissipation: 194W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 68nC
Kind of channel: enhanced
Pulsed drain current: 1181A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 209A; Idm: 1181A; 194W
Case: LFPAK56E; PowerSO8; SOT1023
Mounting: SMD
On-state resistance: 2.05mΩ
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 209A
Type of transistor: N-MOSFET
Power dissipation: 194W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 68nC
Kind of channel: enhanced
Pulsed drain current: 1181A
Produkt ist nicht verfügbar
| BZB84-C2V7,215 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Leakage current: 20µA
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Max. load current: 0.2A
Max. forward voltage: 0.9V
Zener voltage: 2.7V
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Leakage current: 20µA
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Max. load current: 0.2A
Max. forward voltage: 0.9V
Zener voltage: 2.7V
Produkt ist nicht verfügbar
| BZB984-C2V7,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.425W; 2.7V; SMD; reel,tape; SOT663; Ifmax: 200mA
Type of diode: Zener
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT663
Leakage current: 20µA
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.425W
Max. load current: 0.2A
Max. forward voltage: 0.9V
Zener voltage: 2.7V
Category: SMD Zener diodes
Description: Diode: Zener; 0.425W; 2.7V; SMD; reel,tape; SOT663; Ifmax: 200mA
Type of diode: Zener
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT663
Leakage current: 20µA
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.425W
Max. load current: 0.2A
Max. forward voltage: 0.9V
Zener voltage: 2.7V
Produkt ist nicht verfügbar
| BZB84-C47,215 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: common anode; double
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: common anode; double
Leakage current: 50nA
Produkt ist nicht verfügbar
| BUK7M8R0-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48.8A; Idm: 276A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 48.8A
Pulsed drain current: 276A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 15.8mΩ
Mounting: SMD
Gate charge: 23.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48.8A; Idm: 276A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 48.8A
Pulsed drain current: 276A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 15.8mΩ
Mounting: SMD
Gate charge: 23.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK7S0R7-40HJ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 425A; Idm: 1983A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 425A
Pulsed drain current: 1983A
Power dissipation: 375W
Case: LFPAK88; SOT1235
On-state resistance: 1.53mΩ
Mounting: SMD
Gate charge: 202nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 425A; Idm: 1983A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 425A
Pulsed drain current: 1983A
Power dissipation: 375W
Case: LFPAK88; SOT1235
On-state resistance: 1.53mΩ
Mounting: SMD
Gate charge: 202nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK7S1R0-40HJ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 325A; Idm: 1659A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 325A
Pulsed drain current: 1659A
Power dissipation: 375W
Case: LFPAK88; SOT1235
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 137nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 325A; Idm: 1659A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 325A
Pulsed drain current: 1659A
Power dissipation: 375W
Case: LFPAK88; SOT1235
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 137nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK7Y08-40B,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58.85A; Idm: 332A; 105W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58.85A
Pulsed drain current: 332A
Power dissipation: 105W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 36.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58.85A; Idm: 332A; 105W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58.85A
Pulsed drain current: 332A
Power dissipation: 105W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 36.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK7Y21-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; Idm: 132A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Pulsed drain current: 132A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 41.4mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; Idm: 132A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Pulsed drain current: 132A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 41.4mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK7Y29-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 102A; 37W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 102A
Power dissipation: 37W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 57.1mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 102A; 37W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 102A
Power dissipation: 37W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 57.1mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK7Y3R5-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 93A; Idm: 526A; 115W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 93A
Pulsed drain current: 526A
Power dissipation: 115W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 93A; Idm: 526A; 115W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 93A
Pulsed drain current: 526A
Power dissipation: 115W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK7Y7R0-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 48A
Pulsed drain current: 272A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 13.6mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 48A
Pulsed drain current: 272A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 13.6mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| HEF4104BT,652 |
|
Hersteller: NEXPERIA
Category: Level translators
Description: IC: digital; bus transceiver,logic level voltage translator
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver; logic level voltage translator
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO16
Kind of package: tube
Family: HEF4000B
Category: Level translators
Description: IC: digital; bus transceiver,logic level voltage translator
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver; logic level voltage translator
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO16
Kind of package: tube
Family: HEF4000B
Produkt ist nicht verfügbar
| 74AUP2G14GM,115 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; NOT; Ch: 2; IN: 1; CMOS; SMD
Manufacturer series: Mini Logic
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 0.8...3.6V DC
Number of inputs: 1
Family: AUP
Kind of gate: NOT
Technology: CMOS
Kind of integrated circuit: inverter; Schmitt trigger
Case: XSON6
Type of integrated circuit: digital
Number of channels: 2
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; NOT; Ch: 2; IN: 1; CMOS; SMD
Manufacturer series: Mini Logic
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 0.8...3.6V DC
Number of inputs: 1
Family: AUP
Kind of gate: NOT
Technology: CMOS
Kind of integrated circuit: inverter; Schmitt trigger
Case: XSON6
Type of integrated circuit: digital
Number of channels: 2
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
| 74AUP2G14GN,132 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; NOT; Ch: 2; IN: 1; CMOS; SMD
Manufacturer series: Mini Logic
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 0.8...3.6V DC
Number of inputs: 1
Family: AUP
Kind of gate: NOT
Technology: CMOS
Kind of integrated circuit: inverter; Schmitt trigger
Case: XSON6
Type of integrated circuit: digital
Number of channels: 2
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; NOT; Ch: 2; IN: 1; CMOS; SMD
Manufacturer series: Mini Logic
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 0.8...3.6V DC
Number of inputs: 1
Family: AUP
Kind of gate: NOT
Technology: CMOS
Kind of integrated circuit: inverter; Schmitt trigger
Case: XSON6
Type of integrated circuit: digital
Number of channels: 2
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
| 74AUP2G14GS,132 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; NOT; Ch: 2; IN: 1; CMOS; SMD
Manufacturer series: Mini Logic
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 0.8...3.6V DC
Number of inputs: 1
Family: AUP
Kind of gate: NOT
Technology: CMOS
Kind of integrated circuit: inverter; Schmitt trigger
Case: XSON6
Type of integrated circuit: digital
Number of channels: 2
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; NOT; Ch: 2; IN: 1; CMOS; SMD
Manufacturer series: Mini Logic
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 0.8...3.6V DC
Number of inputs: 1
Family: AUP
Kind of gate: NOT
Technology: CMOS
Kind of integrated circuit: inverter; Schmitt trigger
Case: XSON6
Type of integrated circuit: digital
Number of channels: 2
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
| BF823,215 |
|
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 250V; 50mA; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 50mA
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 250V; 50mA; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 50mA
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
auf Bestellung 3314 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 264+ | 0.27 EUR |
| 338+ | 0.21 EUR |
| 433+ | 0.17 EUR |
| 683+ | 0.1 EUR |
| 1124+ | 0.064 EUR |
| 1191+ | 0.06 EUR |
| 74HCT173D,652 |
|
Hersteller: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS,TTL; SMD; SO16; tube; HCT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: tube
Family: HCT
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS,TTL; SMD; SO16; tube; HCT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: tube
Family: HCT
Trigger: positive-edge-triggered
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 96+ | 0.74 EUR |
| 74AUP1G157GXZ |
|
Hersteller: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; IN: 2; CMOS; SMD; X2SON6; 800mVDC÷3.6VDC
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X2SON6
Supply voltage: 0.8...3.6V DC
Family: AUP
Kind of package: reel; tape
Operating temperature: -40...125°C
Kind of input: with Schmitt trigger
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; IN: 2; CMOS; SMD; X2SON6; 800mVDC÷3.6VDC
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: X2SON6
Supply voltage: 0.8...3.6V DC
Family: AUP
Kind of package: reel; tape
Operating temperature: -40...125°C
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
| BUK7M27-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21.3A; Idm: 121A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 21.3A
Pulsed drain current: 121A
Power dissipation: 62W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 19.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21.3A; Idm: 121A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 21.3A
Pulsed drain current: 121A
Power dissipation: 62W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 19.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK7Y14-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 46A; Idm: 259A; 147W
Kind of package: reel; tape
On-state resistance: 35.1mΩ
Drain current: 46A
Drain-source voltage: 80V
Case: LFPAK56; PowerSO8; SOT669
Gate charge: 44.8nC
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 259A
Application: automotive industry
Power dissipation: 147W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 46A; Idm: 259A; 147W
Kind of package: reel; tape
On-state resistance: 35.1mΩ
Drain current: 46A
Drain-source voltage: 80V
Case: LFPAK56; PowerSO8; SOT669
Gate charge: 44.8nC
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 259A
Application: automotive industry
Power dissipation: 147W
Polarisation: unipolar
auf Bestellung 1437 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 54+ | 1.33 EUR |
| 68+ | 1.06 EUR |
| 85+ | 0.84 EUR |
| 90+ | 0.8 EUR |
| 500+ | 0.78 EUR |
| BUK7Y25-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 27.5A; Idm: 156A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 27.5A
Pulsed drain current: 156A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 62.75mΩ
Mounting: SMD
Gate charge: 25.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 27.5A; Idm: 156A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 27.5A
Pulsed drain current: 156A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 62.75mΩ
Mounting: SMD
Gate charge: 25.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK7Y41-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 18A; Idm: 100A; 64W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 18A
On-state resistance: 103mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 64W
Polarisation: unipolar
Gate charge: 16.4nC
Kind of channel: enhanced
Pulsed drain current: 100A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 18A; Idm: 100A; 64W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 18A
On-state resistance: 103mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 64W
Polarisation: unipolar
Gate charge: 16.4nC
Kind of channel: enhanced
Pulsed drain current: 100A
Produkt ist nicht verfügbar
| BUK7Y72-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 11A; Idm: 63A; 45W
Kind of package: reel; tape
On-state resistance: 181mΩ
Drain current: 11A
Drain-source voltage: 80V
Case: LFPAK56; PowerSO8; SOT669
Gate charge: 9.8nC
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 63A
Application: automotive industry
Power dissipation: 45W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 11A; Idm: 63A; 45W
Kind of package: reel; tape
On-state resistance: 181mΩ
Drain current: 11A
Drain-source voltage: 80V
Case: LFPAK56; PowerSO8; SOT669
Gate charge: 9.8nC
Mounting: SMD
Kind of channel: enhanced
Type of transistor: N-MOSFET
Pulsed drain current: 63A
Application: automotive industry
Power dissipation: 45W
Polarisation: unipolar
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 65+ | 1.1 EUR |
| 148+ | 0.49 EUR |
| 164+ | 0.44 EUR |
| 206+ | 0.35 EUR |
| 218+ | 0.33 EUR |
| BUK7Y7R8-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 441A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 78A
Pulsed drain current: 441A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 19.6mΩ
Mounting: SMD
Gate charge: 63.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 441A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 78A
Pulsed drain current: 441A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 19.6mΩ
Mounting: SMD
Gate charge: 63.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BUK7Y9R9-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63A; Idm: 354A; 195W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 63A
Pulsed drain current: 354A
Power dissipation: 195W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 24.9mΩ
Mounting: SMD
Gate charge: 51.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63A; Idm: 354A; 195W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 63A
Pulsed drain current: 354A
Power dissipation: 195W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 24.9mΩ
Mounting: SMD
Gate charge: 51.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar