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74AHCU04BQ,115 NEXPERIA 74AHCU04.pdf Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; DHVQFN14; AHCU
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: DHVQFN14
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AHCU
Produkt ist nicht verfügbar
74AHCU04D,118 NEXPERIA 74AHCU04.pdf Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AHCU
Produkt ist nicht verfügbar
74AHCU04PW,118 NEXPERIA 74AHCU04.pdf Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; AHCU
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AHCU
Produkt ist nicht verfügbar
BZX79-C18,113 BZX79-C18,113 NEXPERIA BZX79.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.4/0.5W; 18V; reel,tape; DO35; single diode; 250mA
Max. load current: 0.25A
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Case: DO35
Mounting: THT
Zener voltage: 18V
Power dissipation: 0.4/0.5W
Semiconductor structure: single diode
Max. forward voltage: 0.9V
auf Bestellung 3325 Stücke:
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1550+0.046 EUR
2300+ 0.031 EUR
2550+ 0.028 EUR
3200+ 0.023 EUR
3325+ 0.021 EUR
Mindestbestellmenge: 1550
BC847BPN-QH BC847BPN-QH NEXPERIA BC847BPN-Q.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SC88; SOT363; TSSOP6
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 2369 Stücke:
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209+0.34 EUR
311+ 0.23 EUR
366+ 0.2 EUR
512+ 0.14 EUR
642+ 0.11 EUR
1629+ 0.044 EUR
1725+ 0.041 EUR
Mindestbestellmenge: 209
BC847BPN-QX BC847BPN-QX NEXPERIA BC847BPN-Q.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SC88; SOT363; TSSOP6
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
BC847BPN-QZ BC847BPN-QZ NEXPERIA BC847BPN-Q.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SC88; SOT363; TSSOP6
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
BC847BPN,165 BC847BPN,165 NEXPERIA BC847BPN.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SC88; SOT363; TSSOP6
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
PUMD10-QF PUMD10-QF NEXPERIA PUMD10-Q.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
PUMD10,125 PUMD10,125 NEXPERIA PUMD10.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
74LVC1G80GW,125 74LVC1G80GW,125 NEXPERIA 74LVC1G80GW,125.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS,TTL; Mini Logic; SMD; TSSOP5
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Manufacturer series: Mini Logic
Family: LVC
Case: TSSOP5
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Type of integrated circuit: digital
Technology: CMOS; TTL
Trigger: positive-edge-triggered
Kind of package: reel; tape
Produkt ist nicht verfügbar
PMN120ENEX PMN120ENEX NEXPERIA PMN120ENE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.4nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
Drain-source voltage: 60V
Drain current: 1.5A
On-state resistance: 246mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
BUK9635-55A,118 BUK9635-55A,118 NEXPERIA BUK9635-55A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 24A; Idm: 133A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 24A
Pulsed drain current: 133A
Power dissipation: 85W
Case: D2PAK; SOT404
Gate-source voltage: ±10V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
BCV46,215 BCV46,215 NEXPERIA BCV46.215.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 250mW
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 220MHz
auf Bestellung 1350 Stücke:
Lieferzeit 14-21 Tag (e)
510+0.14 EUR
590+ 0.12 EUR
820+ 0.088 EUR
870+ 0.083 EUR
Mindestbestellmenge: 510
74LVC11BQ,115 NEXPERIA 74LVC11BQ,115.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; DHVQFN14; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Supply voltage: 1.2V DC; 1.65...3.6V DC
Family: LVC
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of inputs: 3
Quiescent current: 40µA
Delay time: 14.1ns
Produkt ist nicht verfügbar
74LVC11D,118 74LVC11D,118 NEXPERIA 74LVC11D,118.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; SO14; -40÷125°C; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 1.2V DC; 1.65...3.6V DC
Family: LVC
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of inputs: 3
Quiescent current: 40µA
Delay time: 14.1ns
Produkt ist nicht verfügbar
74LVC11PW,112 74LVC11PW,112 NEXPERIA 74LVC11PW.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; TSSOP14; 1.2÷3.6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.2...3.6V DC
Family: LVC
Operating temperature: -40...125°C
Kind of package: tube
Number of inputs: 3
auf Bestellung 120 Stücke:
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120+0.6 EUR
Mindestbestellmenge: 120
74LVC11PW,118 74LVC11PW,118 NEXPERIA 74LVC11PW,118.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; TSSOP14; -40÷125°C; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.2V DC; 1.65...3.6V DC
Family: LVC
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of inputs: 3
Quiescent current: 40µA
Delay time: 14.1ns
Produkt ist nicht verfügbar
PBSS5160T-QR PBSS5160T-QR NEXPERIA Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1.25W; SOT23,TO236AB
Polarisation: bipolar
Case: SOT23; TO236AB
Mounting: SMD
Collector-emitter voltage: 60V
Current gain: 100...400
Collector current: 1A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 1.25W
Kind of package: reel; tape
Produkt ist nicht verfügbar
PBSS5160T,215
+1
 		PBSS5160T,215 NEXPERIA PBSS5160T.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 270mW; SOT23,TO236AB
Polarisation: bipolar
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 220MHz
Collector-emitter voltage: 60V
Current gain: 100...350
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: PNP
Power dissipation: 0.27W
Kind of package: reel; tape
auf Bestellung 4005 Stücke:
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179+0.4 EUR
253+ 0.28 EUR
305+ 0.23 EUR
451+ 0.16 EUR
521+ 0.14 EUR
850+ 0.084 EUR
898+ 0.08 EUR
Mindestbestellmenge: 179
PBSS5160V,115 NEXPERIA PBSS5160V.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; SOT666
Polarisation: bipolar
Case: SOT666
Mounting: SMD
Frequency: 220MHz
Collector-emitter voltage: 60V
Current gain: 100...350
Collector current: 1A
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
BCX56-10,115 BCX56-10,115 NEXPERIA BCX56-16.115.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 500mW; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
auf Bestellung 904 Stücke:
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173+0.41 EUR
227+ 0.32 EUR
302+ 0.24 EUR
388+ 0.18 EUR
486+ 0.15 EUR
637+ 0.11 EUR
Mindestbestellmenge: 173
BCX56-10,135 BCX56-10,135 NEXPERIA BCX56_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
BCX56,115 BCX56,115 NEXPERIA BCX56.115.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 500mW; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
auf Bestellung 1645 Stücke:
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295+0.24 EUR
417+ 0.17 EUR
468+ 0.15 EUR
582+ 0.12 EUR
Mindestbestellmenge: 295
BCX56TX BCX56TX NEXPERIA BCX56T_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.1W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.1W
Case: SC62; SOT89
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
BSP220,115 BSP220,115 NEXPERIA BSP220.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -220V; -0.225A; 1.5W; SC73,SOT223
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SC73; SOT223
Drain-source voltage: -220V
Drain current: -0.225A
On-state resistance: 12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
auf Bestellung 1455 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.12 EUR
135+ 0.53 EUR
150+ 0.48 EUR
160+ 0.45 EUR
170+ 0.42 EUR
500+ 0.41 EUR
Mindestbestellmenge: 65
BSP230,135 BSP230,135 NEXPERIA BSP230.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -300V; -210mA; Idm: -0.75A; 1.5W
Mounting: SMD
Technology: DMOS
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -0.75A
Case: SC73; SOT223
Drain-source voltage: -300V
Drain current: -210mA
On-state resistance: 17Ω
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
BSP250,115 BSP250,115 NEXPERIA BSP250.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.65W
Type of transistor: P-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1.65W
Case: SC73; SOT223
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1111 Stücke:
Lieferzeit 14-21 Tag (e)
75+0.96 EUR
109+ 0.66 EUR
145+ 0.5 EUR
182+ 0.39 EUR
192+ 0.37 EUR
Mindestbestellmenge: 75
PESD3V3L1UL,315 PESD3V3L1UL,315 NEXPERIA PESD3V3L1UA_UB_UL.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 45W; 5.3÷6V; 4.5A; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Peak pulse power dissipation: 45W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.3...6V
Max. forward impulse current: 4.5A
Semiconductor structure: unidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
PESD3V3L2BT,215 PESD3V3L2BT,215 NEXPERIA PESD5V0L2BT-DTE.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 6.4V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 3.3V
Breakdown voltage: 6.4V
Semiconductor structure: bidirectional; double
Case: SOT23
Mounting: SMD
Leakage current: 2µA
Features of semiconductor devices: ESD protection
auf Bestellung 2277 Stücke:
Lieferzeit 14-21 Tag (e)
305+0.23 EUR
445+ 0.16 EUR
500+ 0.14 EUR
635+ 0.11 EUR
Mindestbestellmenge: 305
PESD3V3L2UM,315 NEXPERIA PESDXL2UM_SER.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT883
Type of diode: TVS
Peak pulse power dissipation: 30W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.32...5.88V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: SOT883
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
PESD3V3L4UF,115 NEXPERIA PESDXL4UF_G_W.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT886
Type of diode: TVS
Peak pulse power dissipation: 30W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.32...5.88V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: SOT886
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
PESD3V3U1UT,215 PESD3V3U1UT,215 NEXPERIA PESDXU1UT_SER.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 80W; 6.4V; bidirectional; SOT23
Type of diode: TVS
Peak pulse power dissipation: 80W
Max. off-state voltage: 3.3V
Breakdown voltage: 6.4V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 2µA
Features of semiconductor devices: ESD protection
auf Bestellung 1680 Stücke:
Lieferzeit 14-21 Tag (e)
300+0.24 EUR
500+ 0.14 EUR
560+ 0.13 EUR
720+ 0.1 EUR
760+ 0.094 EUR
Mindestbestellmenge: 300
PESD3V3V1BLYL PESD3V3V1BLYL NEXPERIA PESD3V3V1BL.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 4.5V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 4.5V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 10nA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
PESD3V3X1BCSFYL PESD3V3X1BCSFYL NEXPERIA PESD3V3X1BCSF.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 10V; 8A; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 10V
Max. forward impulse current: 8A
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
PESD3V3X1BL,315 PESD3V3X1BL,315 NEXPERIA PESD3V3X1BL.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5÷7.8V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7.8V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
74HCT125PW,118 74HCT125PW,118 NEXPERIA 74HCT125PW,118.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 4; CMOS,TTL
Operating temperature: -40...125°C
Number of channels: 4
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: buffer; line driver; non-inverting
Family: HCT
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Quiescent current: 160µA
Kind of output: 3-state
Produkt ist nicht verfügbar
HEF4014BT,653 HEF4014BT,653 NEXPERIA HEF4014BT.pdf Category: Shift registers
Description: IC: digital; 8bit,static shift register; CMOS; SMD; SO16; 3÷15VDC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; static shift register
Technology: CMOS
Mounting: SMD
Case: SO16
Supply voltage: 3...15V DC
Family: HEF4000B
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
74HCT86D,653 74HCT86D,653 NEXPERIA 74HCT86D,653.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: HCT
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
96+0.74 EUR
Mindestbestellmenge: 96
74HCT86PW,118 74HCT86PW,118 NEXPERIA 74HCT86PW,118.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Delay time: 48ns
Family: HCT
Produkt ist nicht verfügbar
PEMH11,315 PEMH11,315 NEXPERIA PEMH11.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
PMV50XPR
+1
 		PMV50XPR NEXPERIA PMV50XP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -14.5A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -14.5A
Case: SOT23; TO236AB
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2094 Stücke:
Lieferzeit 14-21 Tag (e)
171+0.42 EUR
275+ 0.26 EUR
407+ 0.18 EUR
431+ 0.17 EUR
Mindestbestellmenge: 171
74HC10D,653 74HC10D,653 NEXPERIA 74HC10D,653.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: HC
auf Bestellung 864 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
141+ 0.51 EUR
155+ 0.46 EUR
176+ 0.41 EUR
348+ 0.21 EUR
368+ 0.19 EUR
Mindestbestellmenge: 125
74HC10DB,118 74HC10DB,118 NEXPERIA 74HC_HCT10.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HC
auf Bestellung 1973 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
325+ 0.22 EUR
371+ 0.19 EUR
394+ 0.18 EUR
432+ 0.17 EUR
Mindestbestellmenge: 228
74HC10PW,112 74HC10PW,112 NEXPERIA 74HC_HCT10.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: tube
Family: HC
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
264+ 0.27 EUR
Mindestbestellmenge: 228
74HC10PW,118 74HC10PW,118 NEXPERIA 74HC10PW,118.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Delay time: 145ns
Family: HC
Produkt ist nicht verfügbar
PHB32N06LT,118 PHB32N06LT,118 NEXPERIA PHB32N06LT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 136A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 136A
Power dissipation: 97W
Case: D2PAK; SOT404
Gate-source voltage: ±15V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 591 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.57 EUR
53+ 1.36 EUR
61+ 1.17 EUR
65+ 1.1 EUR
Mindestbestellmenge: 46
PESD2CAN,215 PESD2CAN,215 NEXPERIA PESD2CAN.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 28V; 5A; 230W; SOT23; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 28V
Max. forward impulse current: 5A
Peak pulse power dissipation: 230W
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 10nA
Number of channels: 2
Application: CAN
Operating temperature: max. 150°C
auf Bestellung 2520 Stücke:
Lieferzeit 14-21 Tag (e)
275+0.26 EUR
315+ 0.23 EUR
345+ 0.21 EUR
440+ 0.16 EUR
Mindestbestellmenge: 275
BZX585-B2V7,115 BZX585-B2V7,115 NEXPERIA BZX585-DTE.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOD523; Ifmax: 200mA
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOD523
Leakage current: 20µA
Kind of package: reel; tape
Tolerance: ±2%
Power dissipation: 0.3W
Max. load current: 0.2A
Max. forward voltage: 1.1V
Zener voltage: 2.7V
Produkt ist nicht verfügbar
74AHC1G4212GWH 74AHC1G4212GWH NEXPERIA 74AHC1G4212GWH.pdf Category: Counters/dividers
Description: IC: digital; 12-stage,divider,oscillator; CMOS; Mini Logic; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; divider; oscillator
Technology: CMOS
Case: TSSOP5
Supply voltage: 2...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Manufacturer series: Mini Logic
Family: AHC
Produkt ist nicht verfügbar
PDTC124EU,115 PDTC124EU,115 NEXPERIA PDTC124EU.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
1275+0.057 EUR
1500+ 0.047 EUR
Mindestbestellmenge: 1275
HEF40244BT,653 HEF40244BT,653 NEXPERIA HEF40244B.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 8; CMOS; SMD; SO20; 3÷15VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Supply voltage: 3...15V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: HEF4000B
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.35 EUR
15+ 5.09 EUR
30+ 2.42 EUR
32+ 2.29 EUR
Mindestbestellmenge: 14
PMBTA42,215 PMBTA42,215 NEXPERIA PMBTA42.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 2315 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
500+ 0.14 EUR
719+ 0.1 EUR
1007+ 0.071 EUR
1200+ 0.06 EUR
1707+ 0.042 EUR
1806+ 0.04 EUR
Mindestbestellmenge: 264
PMBTA42DS,125 PMBTA42DS,125 NEXPERIA PMBTA42DS.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 300V; 0.1A; SC74,SOT457,TSOP6
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Collector current: 0.1A
Pulsed collector current: 0.2A
Type of transistor: NPN x2
Collector-emitter voltage: 300V
Polarisation: bipolar
Produkt ist nicht verfügbar
PESD5V0L1BA,115 PESD5V0L1BA,115 NEXPERIA PESD5V0L1BA-DTE.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 500W; 7.6V; 15A; bidirectional; SOD323
Type of diode: TVS
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 5V
Breakdown voltage: 7.6V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: ESD protection
auf Bestellung 4354 Stücke:
Lieferzeit 14-21 Tag (e)
379+0.19 EUR
633+ 0.11 EUR
705+ 0.1 EUR
878+ 0.082 EUR
926+ 0.077 EUR
Mindestbestellmenge: 379
PESD5V0C1BSFYL PESD5V0C1BSFYL NEXPERIA PESD5V0C1BSF.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 10V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 10V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
auf Bestellung 8574 Stücke:
Lieferzeit 14-21 Tag (e)
340+0.21 EUR
600+ 0.12 EUR
660+ 0.11 EUR
815+ 0.088 EUR
865+ 0.083 EUR
Mindestbestellmenge: 340
PESD5V0F1BL,315 PESD5V0F1BL,315 NEXPERIA PESD5V0F1BL.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6÷10V; 2.5A; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6...10V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
auf Bestellung 2485 Stücke:
Lieferzeit 14-21 Tag (e)
370+0.19 EUR
430+ 0.17 EUR
540+ 0.13 EUR
615+ 0.12 EUR
650+ 0.11 EUR
Mindestbestellmenge: 370
PESD5V0F1BRSFYL PESD5V0F1BRSFYL NEXPERIA PESD5V0F1BRSF.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 28W; 6÷10V; 2.2A; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Peak pulse power dissipation: 28W
Max. off-state voltage: 5V
Breakdown voltage: 6...10V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
PESD5V0L1UL,315 PESD5V0L1UL,315 NEXPERIA PESD5V0L1UL.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 42W; 6.4÷7.2V; 3.5A; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Peak pulse power dissipation: 42W
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.2V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
PESD5V0L2BT,215 PESD5V0L2BT,215 NEXPERIA PESD5V0L2BT-DTE.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 7.6V; 13A; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 7.6V
Max. forward impulse current: 13A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
auf Bestellung 3564 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
176+ 0.41 EUR
220+ 0.33 EUR
293+ 0.24 EUR
725+ 0.099 EUR
770+ 0.093 EUR
Mindestbestellmenge: 139
74AHCU04BQ,115 74AHCU04.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; DHVQFN14; AHCU
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: DHVQFN14
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AHCU
Produkt ist nicht verfügbar
74AHCU04D,118 74AHCU04.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AHCU
Produkt ist nicht verfügbar
74AHCU04PW,118 74AHCU04.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; AHCU
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AHCU
Produkt ist nicht verfügbar
BZX79-C18,113 BZX79.pdf
BZX79-C18,113
Hersteller: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 0.4/0.5W; 18V; reel,tape; DO35; single diode; 250mA
Max. load current: 0.25A
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Case: DO35
Mounting: THT
Zener voltage: 18V
Power dissipation: 0.4/0.5W
Semiconductor structure: single diode
Max. forward voltage: 0.9V
auf Bestellung 3325 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1550+0.046 EUR
2300+ 0.031 EUR
2550+ 0.028 EUR
3200+ 0.023 EUR
3325+ 0.021 EUR
Mindestbestellmenge: 1550
BC847BPN-QH BC847BPN-Q.pdf
BC847BPN-QH
Hersteller: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SC88; SOT363; TSSOP6
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 2369 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
209+0.34 EUR
311+ 0.23 EUR
366+ 0.2 EUR
512+ 0.14 EUR
642+ 0.11 EUR
1629+ 0.044 EUR
1725+ 0.041 EUR
Mindestbestellmenge: 209
BC847BPN-QX BC847BPN-Q.pdf
BC847BPN-QX
Hersteller: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SC88; SOT363; TSSOP6
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
BC847BPN-QZ BC847BPN-Q.pdf
BC847BPN-QZ
Hersteller: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SC88; SOT363; TSSOP6
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
BC847BPN,165 BC847BPN.pdf
BC847BPN,165
Hersteller: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SC88; SOT363; TSSOP6
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
PUMD10-QF PUMD10-Q.pdf
PUMD10-QF
Hersteller: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
PUMD10,125 PUMD10.pdf
PUMD10,125
Hersteller: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
74LVC1G80GW,125 74LVC1G80GW,125.pdf
74LVC1G80GW,125
Hersteller: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS,TTL; Mini Logic; SMD; TSSOP5
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Manufacturer series: Mini Logic
Family: LVC
Case: TSSOP5
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Type of integrated circuit: digital
Technology: CMOS; TTL
Trigger: positive-edge-triggered
Kind of package: reel; tape
Produkt ist nicht verfügbar
PMN120ENEX PMN120ENE.pdf
PMN120ENEX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.4nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
Drain-source voltage: 60V
Drain current: 1.5A
On-state resistance: 246mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
BUK9635-55A,118 BUK9635-55A.pdf
BUK9635-55A,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 24A; Idm: 133A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 24A
Pulsed drain current: 133A
Power dissipation: 85W
Case: D2PAK; SOT404
Gate-source voltage: ±10V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
BCV46,215 BCV46.215.pdf
BCV46,215
Hersteller: NEXPERIA
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 250mW
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 220MHz
auf Bestellung 1350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
510+0.14 EUR
590+ 0.12 EUR
820+ 0.088 EUR
870+ 0.083 EUR
Mindestbestellmenge: 510
74LVC11BQ,115 74LVC11BQ,115.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; DHVQFN14; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Supply voltage: 1.2V DC; 1.65...3.6V DC
Family: LVC
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of inputs: 3
Quiescent current: 40µA
Delay time: 14.1ns
Produkt ist nicht verfügbar
74LVC11D,118 74LVC11D,118.pdf
74LVC11D,118
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; SO14; -40÷125°C; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 1.2V DC; 1.65...3.6V DC
Family: LVC
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of inputs: 3
Quiescent current: 40µA
Delay time: 14.1ns
Produkt ist nicht verfügbar
74LVC11PW,112 74LVC11PW.pdf
74LVC11PW,112
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; TSSOP14; 1.2÷3.6VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.2...3.6V DC
Family: LVC
Operating temperature: -40...125°C
Kind of package: tube
Number of inputs: 3
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
120+0.6 EUR
Mindestbestellmenge: 120
74LVC11PW,118 74LVC11PW,118.pdf
74LVC11PW,118
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS,TTL; SMD; TSSOP14; -40÷125°C; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.2V DC; 1.65...3.6V DC
Family: LVC
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of inputs: 3
Quiescent current: 40µA
Delay time: 14.1ns
Produkt ist nicht verfügbar
PBSS5160T-QR
PBSS5160T-QR
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1.25W; SOT23,TO236AB
Polarisation: bipolar
Case: SOT23; TO236AB
Mounting: SMD
Collector-emitter voltage: 60V
Current gain: 100...400
Collector current: 1A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 1.25W
Kind of package: reel; tape
Produkt ist nicht verfügbar
PBSS5160T,215 PBSS5160T.pdf
PBSS5160T,215
+1
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 270mW; SOT23,TO236AB
Polarisation: bipolar
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 220MHz
Collector-emitter voltage: 60V
Current gain: 100...350
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: PNP
Power dissipation: 0.27W
Kind of package: reel; tape
auf Bestellung 4005 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
253+ 0.28 EUR
305+ 0.23 EUR
451+ 0.16 EUR
521+ 0.14 EUR
850+ 0.084 EUR
898+ 0.08 EUR
Mindestbestellmenge: 179
PBSS5160V,115 PBSS5160V.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; SOT666
Polarisation: bipolar
Case: SOT666
Mounting: SMD
Frequency: 220MHz
Collector-emitter voltage: 60V
Current gain: 100...350
Collector current: 1A
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
BCX56-10,115 BCX56-16.115.pdf
BCX56-10,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 500mW; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
auf Bestellung 904 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
227+ 0.32 EUR
302+ 0.24 EUR
388+ 0.18 EUR
486+ 0.15 EUR
637+ 0.11 EUR
Mindestbestellmenge: 173
BCX56-10,135 BCX56_SER.pdf
BCX56-10,135
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
BCX56,115 BCX56.115.pdf
BCX56,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 500mW; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
auf Bestellung 1645 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
295+0.24 EUR
417+ 0.17 EUR
468+ 0.15 EUR
582+ 0.12 EUR
Mindestbestellmenge: 295
BCX56TX BCX56T_SER.pdf
BCX56TX
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.1W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.1W
Case: SC62; SOT89
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
BSP220,115 BSP220.pdf
BSP220,115
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -220V; -0.225A; 1.5W; SC73,SOT223
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SC73; SOT223
Drain-source voltage: -220V
Drain current: -0.225A
On-state resistance: 12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
auf Bestellung 1455 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
65+1.12 EUR
135+ 0.53 EUR
150+ 0.48 EUR
160+ 0.45 EUR
170+ 0.42 EUR
500+ 0.41 EUR
Mindestbestellmenge: 65
BSP230,135 BSP230.pdf
BSP230,135
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -300V; -210mA; Idm: -0.75A; 1.5W
Mounting: SMD
Technology: DMOS
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -0.75A
Case: SC73; SOT223
Drain-source voltage: -300V
Drain current: -210mA
On-state resistance: 17Ω
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
BSP250,115 BSP250.pdf
BSP250,115
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.65W
Type of transistor: P-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1.65W
Case: SC73; SOT223
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1111 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
75+0.96 EUR
109+ 0.66 EUR
145+ 0.5 EUR
182+ 0.39 EUR
192+ 0.37 EUR
Mindestbestellmenge: 75
PESD3V3L1UL,315 PESD3V3L1UA_UB_UL.pdf
PESD3V3L1UL,315
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 45W; 5.3÷6V; 4.5A; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Peak pulse power dissipation: 45W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.3...6V
Max. forward impulse current: 4.5A
Semiconductor structure: unidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
PESD3V3L2BT,215 PESD5V0L2BT-DTE.pdf
PESD3V3L2BT,215
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.4V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 3.3V
Breakdown voltage: 6.4V
Semiconductor structure: bidirectional; double
Case: SOT23
Mounting: SMD
Leakage current: 2µA
Features of semiconductor devices: ESD protection
auf Bestellung 2277 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
305+0.23 EUR
445+ 0.16 EUR
500+ 0.14 EUR
635+ 0.11 EUR
Mindestbestellmenge: 305
PESD3V3L2UM,315 PESDXL2UM_SER.pdf
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT883
Type of diode: TVS
Peak pulse power dissipation: 30W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.32...5.88V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: SOT883
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
PESD3V3L4UF,115 PESDXL4UF_G_W.pdf
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT886
Type of diode: TVS
Peak pulse power dissipation: 30W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.32...5.88V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: SOT886
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
PESD3V3U1UT,215 PESDXU1UT_SER.pdf
PESD3V3U1UT,215
Hersteller: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 80W; 6.4V; bidirectional; SOT23
Type of diode: TVS
Peak pulse power dissipation: 80W
Max. off-state voltage: 3.3V
Breakdown voltage: 6.4V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 2µA
Features of semiconductor devices: ESD protection
auf Bestellung 1680 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
300+0.24 EUR
500+ 0.14 EUR
560+ 0.13 EUR
720+ 0.1 EUR
760+ 0.094 EUR
Mindestbestellmenge: 300
PESD3V3V1BLYL PESD3V3V1BL.pdf
PESD3V3V1BLYL
Hersteller: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 4.5V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 4.5V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 10nA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
PESD3V3X1BCSFYL PESD3V3X1BCSF.pdf
PESD3V3X1BCSFYL
Hersteller: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 10V; 8A; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 10V
Max. forward impulse current: 8A
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
PESD3V3X1BL,315 PESD3V3X1BL.pdf
PESD3V3X1BL,315
Hersteller: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5÷7.8V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7.8V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
74HCT125PW,118 74HCT125PW,118.pdf
74HCT125PW,118
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 4; CMOS,TTL
Operating temperature: -40...125°C
Number of channels: 4
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: buffer; line driver; non-inverting
Family: HCT
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Quiescent current: 160µA
Kind of output: 3-state
Produkt ist nicht verfügbar
HEF4014BT,653 HEF4014BT.pdf
HEF4014BT,653
Hersteller: NEXPERIA
Category: Shift registers
Description: IC: digital; 8bit,static shift register; CMOS; SMD; SO16; 3÷15VDC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; static shift register
Technology: CMOS
Mounting: SMD
Case: SO16
Supply voltage: 3...15V DC
Family: HEF4000B
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
74HCT86D,653 74HCT86D,653.pdf
74HCT86D,653
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: HCT
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
96+0.74 EUR
Mindestbestellmenge: 96
74HCT86PW,118 74HCT86PW,118.pdf
74HCT86PW,118
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Delay time: 48ns
Family: HCT
Produkt ist nicht verfügbar
PEMH11,315 PEMH11.pdf
PEMH11,315
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
PMV50XPR PMV50XP.pdf
PMV50XPR
+1
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -14.5A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -14.5A
Case: SOT23; TO236AB
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2094 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
171+0.42 EUR
275+ 0.26 EUR
407+ 0.18 EUR
431+ 0.17 EUR
Mindestbestellmenge: 171
74HC10D,653 74HC10D,653.pdf
74HC10D,653
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: HC
auf Bestellung 864 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
125+0.57 EUR
141+ 0.51 EUR
155+ 0.46 EUR
176+ 0.41 EUR
348+ 0.21 EUR
368+ 0.19 EUR
Mindestbestellmenge: 125
74HC10DB,118 74HC_HCT10.pdf
74HC10DB,118
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HC
auf Bestellung 1973 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
228+0.31 EUR
325+ 0.22 EUR
371+ 0.19 EUR
394+ 0.18 EUR
432+ 0.17 EUR
Mindestbestellmenge: 228
74HC10PW,112 74HC_HCT10.pdf
74HC10PW,112
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: tube
Family: HC
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
228+0.31 EUR
264+ 0.27 EUR
Mindestbestellmenge: 228
74HC10PW,118 74HC10PW,118.pdf
74HC10PW,118
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Delay time: 145ns
Family: HC
Produkt ist nicht verfügbar
PHB32N06LT,118 PHB32N06LT.pdf
PHB32N06LT,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 136A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 136A
Power dissipation: 97W
Case: D2PAK; SOT404
Gate-source voltage: ±15V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 591 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
46+1.57 EUR
53+ 1.36 EUR
61+ 1.17 EUR
65+ 1.1 EUR
Mindestbestellmenge: 46
PESD2CAN,215 PESD2CAN.pdf
PESD2CAN,215
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 28V; 5A; 230W; SOT23; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 28V
Max. forward impulse current: 5A
Peak pulse power dissipation: 230W
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 10nA
Number of channels: 2
Application: CAN
Operating temperature: max. 150°C
auf Bestellung 2520 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
275+0.26 EUR
315+ 0.23 EUR
345+ 0.21 EUR
440+ 0.16 EUR
Mindestbestellmenge: 275
BZX585-B2V7,115 BZX585-DTE.pdf
BZX585-B2V7,115
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOD523; Ifmax: 200mA
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOD523
Leakage current: 20µA
Kind of package: reel; tape
Tolerance: ±2%
Power dissipation: 0.3W
Max. load current: 0.2A
Max. forward voltage: 1.1V
Zener voltage: 2.7V
Produkt ist nicht verfügbar
74AHC1G4212GWH 74AHC1G4212GWH.pdf
74AHC1G4212GWH
Hersteller: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 12-stage,divider,oscillator; CMOS; Mini Logic; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; divider; oscillator
Technology: CMOS
Case: TSSOP5
Supply voltage: 2...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Manufacturer series: Mini Logic
Family: AHC
Produkt ist nicht verfügbar
PDTC124EU,115 PDTC124EU.pdf
PDTC124EU,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1275+0.057 EUR
1500+ 0.047 EUR
Mindestbestellmenge: 1275
HEF40244BT,653 HEF40244B.pdf
HEF40244BT,653
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 8; CMOS; SMD; SO20; 3÷15VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Supply voltage: 3...15V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: HEF4000B
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
14+5.35 EUR
15+ 5.09 EUR
30+ 2.42 EUR
32+ 2.29 EUR
Mindestbestellmenge: 14
PMBTA42,215 PMBTA42.pdf
PMBTA42,215
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 2315 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
264+0.27 EUR
500+ 0.14 EUR
719+ 0.1 EUR
1007+ 0.071 EUR
1200+ 0.06 EUR
1707+ 0.042 EUR
1806+ 0.04 EUR
Mindestbestellmenge: 264
PMBTA42DS,125 PMBTA42DS.pdf
PMBTA42DS,125
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 300V; 0.1A; SC74,SOT457,TSOP6
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Collector current: 0.1A
Pulsed collector current: 0.2A
Type of transistor: NPN x2
Collector-emitter voltage: 300V
Polarisation: bipolar
Produkt ist nicht verfügbar
PESD5V0L1BA,115 PESD5V0L1BA-DTE.pdf
PESD5V0L1BA,115
Hersteller: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 500W; 7.6V; 15A; bidirectional; SOD323
Type of diode: TVS
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 5V
Breakdown voltage: 7.6V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: ESD protection
auf Bestellung 4354 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
379+0.19 EUR
633+ 0.11 EUR
705+ 0.1 EUR
878+ 0.082 EUR
926+ 0.077 EUR
Mindestbestellmenge: 379
PESD5V0C1BSFYL PESD5V0C1BSF.pdf
PESD5V0C1BSFYL
Hersteller: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 10V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 10V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
auf Bestellung 8574 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
340+0.21 EUR
600+ 0.12 EUR
660+ 0.11 EUR
815+ 0.088 EUR
865+ 0.083 EUR
Mindestbestellmenge: 340
PESD5V0F1BL,315 PESD5V0F1BL.pdf
PESD5V0F1BL,315
Hersteller: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6÷10V; 2.5A; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6...10V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
auf Bestellung 2485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
370+0.19 EUR
430+ 0.17 EUR
540+ 0.13 EUR
615+ 0.12 EUR
650+ 0.11 EUR
Mindestbestellmenge: 370
PESD5V0F1BRSFYL PESD5V0F1BRSF.pdf
PESD5V0F1BRSFYL
Hersteller: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 28W; 6÷10V; 2.2A; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Peak pulse power dissipation: 28W
Max. off-state voltage: 5V
Breakdown voltage: 6...10V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
PESD5V0L1UL,315 PESD5V0L1UL.pdf
PESD5V0L1UL,315
Hersteller: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 42W; 6.4÷7.2V; 3.5A; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Peak pulse power dissipation: 42W
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.2V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
PESD5V0L2BT,215 PESD5V0L2BT-DTE.pdf
PESD5V0L2BT,215
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.6V; 13A; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 7.6V
Max. forward impulse current: 13A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
auf Bestellung 3564 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
139+0.51 EUR
176+ 0.41 EUR
220+ 0.33 EUR
293+ 0.24 EUR
725+ 0.099 EUR
770+ 0.093 EUR
Mindestbestellmenge: 139
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