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PBSS5160T-QR

PBSS5160T-QR Nexperia


PBSS5160T_Q-3356913.pdf Hersteller: Nexperia
Bipolar Transistors - BJT PBSS5160T-Q/SOT23/TO-236AB
auf Bestellung 2914 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.62 EUR
10+ 0.44 EUR
100+ 0.28 EUR
1000+ 0.12 EUR
3000+ 0.11 EUR
Mindestbestellmenge: 5
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Technische Details PBSS5160T-QR Nexperia

Description: PBSS5160T-Q/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V, Frequency - Transition: 220MHz, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 900 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 270 mW.

Weitere Produktangebote PBSS5160T-QR

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PBSS5160T-QR PBSS5160T-QR Hersteller : Nexperia pbss5160t.pdf Trans GP BJT PNP 60V 1A 1250mW Automotive AEC-Q101 3-Pin SOT-23
Produkt ist nicht verfügbar
PBSS5160T-QR PBSS5160T-QR Hersteller : NEXPERIA Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1.25W; SOT23,TO236AB
Polarisation: bipolar
Case: SOT23; TO236AB
Mounting: SMD
Collector-emitter voltage: 60V
Current gain: 100...400
Collector current: 1A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 1.25W
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PBSS5160T-QR PBSS5160T-QR Hersteller : NEXPERIA 2422352998535119pbss5160t.pdf Trans GP BJT PNP 60V 1A 1250mW 3-Pin SOT-23
Produkt ist nicht verfügbar
PBSS5160T-QR Hersteller : Nexperia USA Inc. Description: PBSS5160T-Q/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 900 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 270 mW
Produkt ist nicht verfügbar
PBSS5160T-QR PBSS5160T-QR Hersteller : NEXPERIA Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 1.25W; SOT23,TO236AB
Polarisation: bipolar
Case: SOT23; TO236AB
Mounting: SMD
Collector-emitter voltage: 60V
Current gain: 100...400
Collector current: 1A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 1.25W
Kind of package: reel; tape
Produkt ist nicht verfügbar