Produkte > SIZ
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||||
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SIZ200DT-T1-GE3 | Vishay Semiconductors | MOSFET 30V Vds 20/-16V Vgs PowerPAIR 3x3S | auf Bestellung 4999 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SIZ200DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 22A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ200DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 22A 8POWERPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.3W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1600pF @ 15V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, 30nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® (3.3x3.3) | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ200DT-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 61A; Idm: 130A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 61A Pulsed drain current: 130A Power dissipation: 33W On-state resistance: 7.7/7.3mΩ Mounting: SMD Gate charge: 30/28nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ200DT-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 61A; Idm: 130A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 61A Pulsed drain current: 130A Power dissipation: 33W On-state resistance: 7.7/7.3mΩ Mounting: SMD Gate charge: 30/28nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ200DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 22A 8POWERPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.3W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1600pF @ 15V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, 30nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® (3.3x3.3) | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ240DT-T1-GE3 | VISHAY | Description: VISHAY - SIZ240DT-T1-GE3 - Dual-MOSFET, n-Kanal, 40 V, 48 A, 0.00671 ohm, PowerPAIR 3 x 3S, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40 Dauer-Drainstrom Id: 48 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 33 Gate-Source-Schwellenspannung, max.: 2.4 Bauform - Transistor: PowerPAIR 3 x 3S Anzahl der Pins: 8 Produktpalette: TrenchFET Gen IV Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.00671 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 SVHC: Lead (19-Jan-2021) | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ240DT-T1-GE3 | VISHAY | SIZ240DT-T1-GE3 Multi channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ240DT-T1-GE3 | Vishay Siliconix | Description: MOSFET DUAL N-CH 40V POWERPAIR 3 | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ240DT-T1-GE3 | VISHAY | Description: VISHAY - SIZ240DT-T1-GE3 - Dual-MOSFET, n-Kanal, 40 V, 48 A, 0.00671 ohm, PowerPAIR 3 x 3S, Oberflächenmontage SVHC: Lead (19-Jan-2021) | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ240DT-T1-GE3 | Vishay / Siliconix | MOSFET DUAL N-CHANNEL Symm.PowerPAIR 3 x 3 | auf Bestellung 5905 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ240DT-T1-GE3 | Vishay | Transistor 2xN-Channel MOSFET; 40V; 20V; 12mOhm/13mOhm; 48A/47A; 33W; -55°C ~ 150°C; SIZ240DT-T1-GE3 TSIZ240dt Anzahl je Verpackung: 5 Stücke | auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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SIZ240DT-T1-GE3 | Vishay | SIZ240DT-T1-GE3 | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ240DT-T1-GE3 | Vishay Siliconix | Description: MOSFET DUAL N-CH 40V POWERPAIR 3 | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ250DT-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 38A; Idm: 80A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 38A Pulsed drain current: 80A Power dissipation: 33W Gate-source voltage: ±20V On-state resistance: 18.87/18.11mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ250DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 60V 14A 8PWRPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.3W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® (3.3x3.3) Part Status: Active | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ250DT-T1-GE3 | VISHAY | Description: VISHAY - SIZ250DT-T1-GE3 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 38 A, 38 A, 0.01007 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 38A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 38A Drain-Source-Durchgangswiderstand, p-Kanal: 0.01007ohm Verlustleistung, p-Kanal: 33W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.01007ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 33W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 11744 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ250DT-T1-GE3 | Vishay Semiconductors | MOSFET DUAL N-CHANNEL 60-V PowerPAIR 3 x 3S | auf Bestellung 34637 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ250DT-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 38A; Idm: 80A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 38A Pulsed drain current: 80A Power dissipation: 33W Gate-source voltage: ±20V On-state resistance: 18.87/18.11mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ250DT-T1-GE3 | Vishay | Trans MOSFET N-CH 60V 14A 8-Pin PowerPAIR EP | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ250DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 60V 14A 8PWRPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.3W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® (3.3x3.3) Part Status: Active | auf Bestellung 9287 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ254DT-T1-GE3 | Vishay Siliconix | Description: DUAL N-CHANNEL 70 V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.3W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 70V Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 32.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 35V, 765pF @ 35V Rds On (Max) @ Id, Vgs: 16.1mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® (3.3x3.3) Part Status: Active | auf Bestellung 1030 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ254DT-T1-GE3 | VISHAY | Description: VISHAY - SIZ254DT-T1-GE3 - Dual-MOSFET, n-Kanal, 70 V, 70 V, 32.5 A, 32.5 A, 0.0129 ohm tariffCode: 85412900 Wandlerpolarität: n-Kanal Betriebstemperatur, max.: 150°C productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand, p-Kanal: 0.0129ohm Anzahl der Pins: 8Pin(s) Dauer-Drainstrom Id, p-Kanal: 32.5A Dauer-Drainstrom Id, n-Kanal: 32.5A hazardous: false Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Produktpalette: TrenchFET Gen IV Series Bauform - Transistor: PowerPAIR Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR rohsCompliant: YES Verlustleistung, n-Kanal: 33W Drain-Source-Spannung Vds: 70V Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 70V Verlustleistung, p-Kanal: 33W Drain-Source-Spannung Vds, n-Kanal: 70V Drain-Source-Durchgangswiderstand, n-Kanal: 0.0129ohm Dauer-Drainstrom Id: 32.5A rohsPhthalatesCompliant: YES Betriebswiderstand, Rds(on): 0.0129ohm Qualifizierungsstandard der Automobilindustrie: - usEccn: EAR99 Transistormontage: Oberflächenmontage Verlustleistung Pd: 33W SVHC: Lead (19-Jan-2021) | auf Bestellung 12995 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ254DT-T1-GE3 | Vishay / Siliconix | MOSFET DUAL N-CHANNEL 70-V (D-S) S | auf Bestellung 5862 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ254DT-T1-GE3 | Vishay Siliconix | Description: DUAL N-CHANNEL 70 V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.3W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 70V Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 32.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 35V, 765pF @ 35V Rds On (Max) @ Id, Vgs: 16.1mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® (3.3x3.3) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ256DT-T1-GE3 | VISHAY | Description: VISHAY - SIZ256DT-T1-GE3 - Dual-MOSFET, n-Kanal, 70 V, 31.8 A, 0.0137 ohm, PowerPAIR 3 x 3S, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 70 Dauer-Drainstrom Id: 31.8 Rds(on)-Messspannung Vgs: 4.5 Verlustleistung Pd: 33 Bauform - Transistor: PowerPAIR 3 x 3S Anzahl der Pins: 8 Produktpalette: TrenchFET Gen IV Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0137 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 1.5 SVHC: Lead (19-Jan-2021) | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ256DT-T1-GE3 | VISHAY | SIZ256DT-T1-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ256DT-T1-GE3 | Vishay | Trans MOSFET N-CH 70V 11.5A 8-Pin PowerPAIR EP | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ256DT-T1-GE3 | Vishay Siliconix | Description: DUAL N-CHANNEL 70 V (D-S) MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ256DT-T1-GE3 Produktcode: 185540 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
SIZ256DT-T1-GE3 | VISHAY | Description: VISHAY - SIZ256DT-T1-GE3 - Dual-MOSFET, n-Kanal, 70 V, 31.8 A, 0.0137 ohm, PowerPAIR 3 x 3S, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 70 Dauer-Drainstrom Id: 31.8 Rds(on)-Messspannung Vgs: 4.5 Verlustleistung Pd: 33 Bauform - Transistor: PowerPAIR 3 x 3S Anzahl der Pins: 8 Produktpalette: TrenchFET Gen IV Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0137 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 1.5 SVHC: Lead (19-Jan-2021) | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ256DT-T1-GE3 | Vishay / Siliconix | MOSFET DUAL N-CHANNEL 70-V (D-S) MOSF | auf Bestellung 2600 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ256DT-T1-GE3 | Vishay Siliconix | Description: DUAL N-CHANNEL 70 V (D-S) MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ256DT-T1-GE3 | Vishay | Trans MOSFET N-CH 70V 11.5A 8-Pin PowerPAIR EP | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ260DT-T1-GE3 | Vishay Semiconductors | MOSFETs DUAL N-CHANNEL 80-V PowerPAIR 3 x 3S | auf Bestellung 8018 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ260DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 80V 8.9A 8PWRPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.3W (Ta), 33W (Tc) FET Type: N-Channel Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 40V Rds On (Max) @ Id, Vgs: 24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V | auf Bestellung 16231 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ260DT-T1-GE3 | VISHAY | SIZ260DT-T1-GE3 Multi channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ260DT-T1-GE3 | Vishay | Trans MOSFET N-CH 80V 8.9A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ260DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 80V 8.9A 8PWRPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.3W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 40V Rds On (Max) @ Id, Vgs: 24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® (3.3x3.3) | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ270DT-T1-GE3 | VISHAY | Description: VISHAY - SIZ270DT-T1-GE3 - Dual-MOSFET, n-Kanal, 100 V, 19.5 A, 0.0302 ohm, PowerPAIR 3 x 3S, Oberflächenmontage SVHC: Lead (19-Jan-2021) | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ270DT-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 19.5A; 33W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 19.5A Pulsed drain current: 40A Power dissipation: 33W Gate-source voltage: ±20V On-state resistance: 54.1/51.7mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ270DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 100V 7.1A 8PWRPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.3W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® (3.3x3.3) | auf Bestellung 11593 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ270DT-T1-GE3 | VISHAY | Description: VISHAY - SIZ270DT-T1-GE3 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 19.5 A, 19.5 A, 0.0302 ohm tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 19.5A Dauer-Drainstrom Id, p-Kanal: 19.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 100V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 19.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0302ohm Verlustleistung Pd: 33W Gate-Source-Schwellenspannung, max.: 2.4V Verlustleistung, p-Kanal: 33W Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0302ohm productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 33W Betriebswiderstand, Rds(on): 0.0302ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C SVHC: Lead (19-Jan-2021) | auf Bestellung 14050 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ270DT-T1-GE3 | Vishay / Siliconix | MOSFET Dual N-Ch 100V(D-S) | auf Bestellung 11077 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ270DT-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 19.5A; 33W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 19.5A Pulsed drain current: 40A Power dissipation: 33W Gate-source voltage: ±20V On-state resistance: 54.1/51.7mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ270DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 100V 7.1A 8PWRPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.3W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® (3.3x3.3) | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ300DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 11A POWERPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 16.7W, 31W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A, 28A Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 9.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ300DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ300DT-T1-GE3 | Vishay Semiconductors | MOSFET RECOMMENDED ALT SIZ342DT-T1-GE3 | auf Bestellung 2995 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ300DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ300DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR EP T/R | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ300DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 11A POWERPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 16.7W, 31W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A, 28A Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 9.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-PowerPair® Part Status: Active | auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ300DT-T1-GE3 Produktcode: 106566 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
SIZ300DT-T1-GE3 | VISHAY | SIZ300DT-T1-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ320DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 25V 30/40A 8POWER33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 16.7W, 31W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 12.5V, 1370pF @ 12.5V Rds On (Max) @ Id, Vgs: 8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V, 11.9nC @ 4.5V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ320DT-T1-GE3 | VISHAY | Description: VISHAY - SIZ320DT-T1-GE3 - Dual-MOSFET, Zweifach n-Kanal, 25 V, 40 A, 0.00353 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 40A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 25V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.00353ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 31W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ320DT-T1-GE3 | VISHAY | SIZ320DT-T1-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ320DT-T1-GE3 | VISHAY | Description: VISHAY - SIZ320DT-T1-GE3 - Dual-MOSFET, Zweifach n-Kanal, 25 V, 40 A, 0.00353 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 40A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 25V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.00353ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 31W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ320DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 25V 30/40A 8POWER33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 16.7W, 31W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 12.5V, 1370pF @ 12.5V Rds On (Max) @ Id, Vgs: 8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V, 11.9nC @ 4.5V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) | auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ320DT-T1-GE3 | Vishay / Siliconix | MOSFET 25V Vds 16V Vgs PowerPAIR 3 x 3 | auf Bestellung 3904 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ320DT-T1-GE3 | Vishay | Trans MOSFET N-CH 25V 17.2A/24.8A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ322DT-T1-GE3 | VISHAY | Description: VISHAY - SIZ322DT-T1-GE3 - Dual-MOSFET, n-Kanal, 25 V, 25 V, 30 A, 30 A, 0.00529 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 25V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 30A Drain-Source-Durchgangswiderstand, p-Kanal: 0.00529ohm Verlustleistung, p-Kanal: 16.7W Drain-Source-Spannung Vds, n-Kanal: 25V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pins Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.00529ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 16.7W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ322DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 25V 30A 8PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 16.7W (Tc) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 12.5V Rds On (Max) @ Id, Vgs: 6.35mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active | auf Bestellung 9950 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ322DT-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 30A; Idm: 100A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 30A Pulsed drain current: 100A Power dissipation: 16.7W On-state resistance: 9mΩ Mounting: SMD Gate charge: 20.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ322DT-T1-GE3 | Vishay | Trans MOSFET N-CH 25V 30A 8-Pin PowerPAIR EP T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZ322DT-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 30A; Idm: 100A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 30A Pulsed drain current: 100A Power dissipation: 16.7W On-state resistance: 9mΩ Mounting: SMD Gate charge: 20.1nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ322DT-T1-GE3 | Vishay | Trans MOSFET N-CH 25V 30A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ322DT-T1-GE3 Produktcode: 175930 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
SIZ322DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 25V 30A 8PWR33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 16.7W (Tc) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 12.5V Rds On (Max) @ Id, Vgs: 6.35mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ322DT-T1-GE3 | Vishay / Siliconix | MOSFETs 25V Vds 16V Vgs PowerPAIR 3 x 3 | auf Bestellung 61170 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ322DT-T1-GE3 | Vishay | Trans MOSFET N-CH 25V 30A 8-Pin PowerPAIR EP T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ322DT-T1-GE3 | Vishay | Trans MOSFET N-CH 25V 30A 8-Pin PowerPAIR EP T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZ322DT-T1-GE3 | VISHAY | Description: VISHAY - SIZ322DT-T1-GE3 - Dual-MOSFET, n-Kanal, 25 V, 25 V, 30 A, 30 A, 0.00529 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 25V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 30A Drain-Source-Durchgangswiderstand, p-Kanal: 0.00529ohm Verlustleistung, p-Kanal: 16.7W Drain-Source-Spannung Vds, n-Kanal: 25V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pins Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.00529ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 16.7W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ322DT-T1-GE3 | Vishay | Trans MOSFET N-CH 25V 30A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ322DT-T1-GE3 | Vishay | Trans MOSFET N-CH 25V 30A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ328DT-T1-GE3 | Vishay Semiconductors | MOSFETs 25V Vds 16V Vgs PowerPAIR 3 x 3 | auf Bestellung 4570 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ328DT-T1-GE3 | Vishay Siliconix | Description: MOSFET DUAL N-CHAN 25V POWERPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active | auf Bestellung 2850 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ328DT-T1-GE3 | Vishay Siliconix | Description: MOSFET DUAL N-CHAN 25V POWERPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ340ADT | Vishay | Trans MOSFET N-CH 30V 15.7A/25.4A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ340ADT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 15.7A/25.4A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ340ADT-T1-GE3 | VISHAY | Description: VISHAY - SIZ340ADT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.7 A, 69.7 A, 0.00357 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 69.7A Dauer-Drainstrom Id, p-Kanal: 69.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 69.7A Drain-Source-Durchgangswiderstand, p-Kanal: 0.00357ohm Verlustleistung, p-Kanal: 31W euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.00357ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 31W Betriebstemperatur, max.: 150°C SVHC: Lead (19-Jan-2021) | auf Bestellung 11672 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ340ADT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 15.7A/25.4A 8-Pin PowerPAIR EP T/R | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ340ADT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 15.7A 8PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V, 1290pF @ 15V Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V, 27.9nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active | auf Bestellung 16381 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ340ADT-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 33.4/69.7A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 33.4/69.7A Pulsed drain current: 100...150A Power dissipation: 16.7/31W On-state resistance: 14.4/6.2mΩ Mounting: SMD Gate charge: 27.9/12.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ340ADT-T1-GE3 | Vishay Semiconductors | MOSFETs DUAL N-CHANNEL 30-V | auf Bestellung 10323 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ340ADT-T1-GE3 | VISHAY | Description: VISHAY - SIZ340ADT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.7 A, 69.7 A, 0.00357 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 69.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 69.7A Drain-Source-Durchgangswiderstand, p-Kanal: 0.00357ohm Verlustleistung, p-Kanal: 31W euEccn: NLR Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.00357ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 31W SVHC: Lead (19-Jan-2021) | auf Bestellung 11672 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ340ADT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 15.7A 8PWR33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V, 1290pF @ 15V Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V, 27.9nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ340ADT-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 33.4/69.7A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 33.4/69.7A Pulsed drain current: 100...150A Power dissipation: 16.7/31W On-state resistance: 14.4/6.2mΩ Mounting: SMD Gate charge: 27.9/12.2nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ340ADT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 15.7A/25.4A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ340BDT-T1-GE3 | VISHAY | Description: VISHAY - SIZ340BDT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.3 A, 69.3 A, 0.00359 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 69.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 69.3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.00359ohm Verlustleistung, p-Kanal: 31W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pins Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.00359ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 31W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 8133 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ340BDT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 16.9A 8PWR33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ340BDT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 16.9A/25.3A T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ340BDT-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 36/69.3A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 36/69.3A Pulsed drain current: 100...150A Power dissipation: 16.7/31W On-state resistance: 14.03/6.7mΩ Mounting: SMD Gate charge: 23.5/12.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ340BDT-T1-GE3 | Vishay / Siliconix | MOSFETs PWRPR N CHAN 30V | auf Bestellung 18817 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ340BDT-T1-GE3 | VISHAY | Description: VISHAY - SIZ340BDT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 69.3 A, 69.3 A, 0.00359 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 69.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 69.3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.00359ohm Verlustleistung, p-Kanal: 31W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pins Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.00359ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 31W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 8133 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ340BDT-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 36/69.3A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 36/69.3A Pulsed drain current: 100...150A Power dissipation: 16.7/31W On-state resistance: 14.03/6.7mΩ Mounting: SMD Gate charge: 23.5/12.6nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ340BDT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 16.9A/25.3A T/R | auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ340BDT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 16.9A 8PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active | auf Bestellung 5621 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ340DT HS | Vishay / Siliconix | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ340DT LS | Vishay / Siliconix | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ340DT-T1-GE3 | Vishay Semiconductors | MOSFETs 30V Vds 20V Vgs PowerPAIR 3 x 3 | auf Bestellung 3825 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ340DT-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 30/40A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 30/40A Pulsed drain current: 100...150A Power dissipation: 16.7/31W On-state resistance: 13.7/7mΩ Mounting: SMD Gate charge: 19/35nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ340DT-T1-GE3 | VISHAY | Description: VISHAY - SIZ340DT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 40 A, 40 A, 0.0042 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 40A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0042ohm Verlustleistung, p-Kanal: 31W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0042ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 31W Betriebstemperatur, max.: 150°C SVHC: Lead (19-Jan-2021) | auf Bestellung 6293 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ340DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 30A/40A 8PWR33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 16.7W, 31W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A, 40A Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ340DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 30A/40A 8-Pin PowerPAIR EP T/R | auf Bestellung 5750 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZ340DT-T1-GE3 | VISHAY | Description: VISHAY - SIZ340DT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 40 A, 40 A, 0.0042 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 40A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0042ohm Verlustleistung, p-Kanal: 31W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0042ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 31W Betriebstemperatur, max.: 150°C SVHC: Lead (19-Jan-2021) | auf Bestellung 6293 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ340DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 15.6A/22.6A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ340DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 30A/40A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ340DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 30A/40A 8PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 16.7W, 31W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A, 40A Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) | auf Bestellung 8841 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ340DT-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 30/40A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 30/40A Pulsed drain current: 100...150A Power dissipation: 16.7/31W On-state resistance: 13.7/7mΩ Mounting: SMD Gate charge: 19/35nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ340DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 30A/40A 8-Pin PowerPAIR EP T/R | auf Bestellung 5750 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZ342ADT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 15.7A 8PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.7W (Ta), 16.7W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) | auf Bestellung 12085 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ342ADT-T1-GE3 | Vishay | N Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ342ADT-T1-GE3 | VISHAY | Description: VISHAY - SIZ342ADT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 33.4 A, 33.4 A, 0.0078 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 33.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 33.4A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0078ohm Verlustleistung, p-Kanal: 16.7W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET GEN IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0078ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 16.7W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 3810 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ342ADT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 15.7A 8PWR33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.7W (Ta), 16.7W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ342ADT-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 33.4A; 16.7W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 33.4A Pulsed drain current: 100A Power dissipation: 16.7W On-state resistance: 14.4mΩ Mounting: SMD Gate charge: 12.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ342ADT-T1-GE3 | Vishay Semiconductors | MOSFET Dual N-Channel 30V | auf Bestellung 5351 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ342ADT-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 33.4A; 16.7W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 33.4A Pulsed drain current: 100A Power dissipation: 16.7W On-state resistance: 14.4mΩ Mounting: SMD Gate charge: 12.2nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ342ADT-T1-GE3 | VISHAY | Description: VISHAY - SIZ342ADT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 33.4 A, 33.4 A, 0.0078 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 33.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 33.4A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0078ohm Verlustleistung, p-Kanal: 16.7W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET GEN IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0078ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 16.7W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 3810 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ342BDT-T1-GE3 | Vishay | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ342DT-T1-GE3 | VISHAY | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 30A; Idm: 100A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 100A Power dissipation: 16.7W On-state resistance: 15.3mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ342DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 15.6A 8-Pin PowerPAIR EP | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ342DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 15.7A 8PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.6W, 4.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active | auf Bestellung 4839 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ342DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 15.6A 8-Pin PowerPAIR EP | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZ342DT-T1-GE3 | VISHAY | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 30A; Idm: 100A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 100A Power dissipation: 16.7W On-state resistance: 15.3mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ342DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 15.6A 8-Pin PowerPAIR EP | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZ342DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 15.6A 8-Pin PowerPAIR EP | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZ342DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 15.7A 8PWR33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.6W, 4.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ342DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 15.6A 8-Pin PowerPAIR EP | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ342DT-T1-GE3 | VISHAY | Description: VISHAY - SIZ342DT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 30 A, 30 A, 0.0084 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 30A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0084ohm Verlustleistung, p-Kanal: 16.7W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pins Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0084ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 16.7W Betriebstemperatur, max.: 150°C | auf Bestellung 5502 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ342DT-T1-GE3 | Vishay Semiconductors | MOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3 | auf Bestellung 2550 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ342DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 15.6A 8-Pin PowerPAIR EP | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZ342DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 15.6A 8-Pin PowerPAIR EP | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ342DT-T1-GE3 | VISHAY | Description: VISHAY - SIZ342DT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 30 A, 30 A, 0.0084 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 30A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0084ohm Verlustleistung, p-Kanal: 16.7W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pins Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0084ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 16.7W Betriebstemperatur, max.: 150°C | auf Bestellung 5502 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ346DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 17A/30A 8PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 16W, 16.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) | auf Bestellung 2874 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ346DT-T1-GE3 | Vishay / Siliconix | MOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3 | auf Bestellung 4258 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ346DT-T1-GE3 | Vishay | Dual N-Channel 30 V (D-S) MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ346DT-T1-GE3 | VISHAY | SIZ346DT-T1-GE3 Multi channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ346DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 17A/30A 8PWR33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 16W, 16.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ348DT-T1-GE3 | Vishay / Siliconix | MOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3 | auf Bestellung 4761 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ348DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 18A 8-Pin PowerPAIR EP T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZ348DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 18A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ348DT-T1-GE3 | VISHAY | SIZ348DT-T1-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ348DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 18A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ348DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 18A/30A 8PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.7W (Ta), 16.7W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ348DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 18A 8-Pin PowerPAIR EP T/R | auf Bestellung 1895 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZ348DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 18A 8-Pin PowerPAIR EP T/R | auf Bestellung 1895 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZ348DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 18A/30A 8PWR33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.7W (Ta), 16.7W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ350DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 18.5A 8PWR33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.7W (Ta), 16.7W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ350DT-T1-GE3 | VISHAY | Description: VISHAY - SIZ350DT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 30 A, 30 A, 0.00563 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 30A Drain-Source-Durchgangswiderstand, p-Kanal: 0.00563ohm Verlustleistung, p-Kanal: 16.7W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.00563ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 16.7W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 7395 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ350DT-T1-GE3 | Vishay Semiconductors | MOSFET 30V Vds 16V Vgs PowerPAIR 3 x 3 | auf Bestellung 6106 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ350DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 18.5A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ350DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 18.5A 8PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.7W (Ta), 16.7W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) | auf Bestellung 7529 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ350DT-T1-GE3 | VISHAY | SIZ350DT-T1-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ350DT-T1-GE3 | VISHAY | Description: VISHAY - SIZ350DT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 30 A, 30 A, 0.00563 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 30A Drain-Source-Durchgangswiderstand, p-Kanal: 0.00563ohm Verlustleistung, p-Kanal: 16.7W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.00563ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 16.7W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 7395 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ700DT-T1-GE3 | Vishay / Siliconix | MOSFET RECOMMENDED ALT 781-SIZ710DT-T1-GE3 | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ700DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 20V 16A PPAK 1212-8 | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ700DT-T1-GE3 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SIZ702DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 16A POWERPAIR | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ702DT-T1-GE3 | Vishay / Siliconix | MOSFET 30 Volts 16 Amps 27 Watts | auf Bestellung 1480 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SIZ702DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 16A POWERPAIR | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ704DT-T1-GE3 | VISHAY | QFN | auf Bestellung 90 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
SIZ704DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 12A 6PWRPAIR Packaging: Tape & Reel (TR) Package / Case: 6-PowerPair™ Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20W, 30W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 16A Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-PowerPair™ | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ704DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 9.4A/14A 6-Pin PowerPAIR T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ704DT-T1-GE3 | Vishay Semiconductors | MOSFET 30V 12/16A 20/30W 24/13.5mohm @ 10V | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ704DT-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 12/16A; 20/30W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 12/16A Pulsed drain current: 30...40A Power dissipation: 20/30W Gate-source voltage: ±20V On-state resistance: 30/17mΩ Mounting: SMD Gate charge: 12/23nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ704DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 12A 6PWRPAIR Packaging: Cut Tape (CT) Package / Case: 6-PowerPair™ Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20W, 30W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 16A Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-PowerPair™ | auf Bestellung 6077 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ704DT-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 12/16A; 20/30W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 12/16A Pulsed drain current: 30...40A Power dissipation: 20/30W Gate-source voltage: ±20V On-state resistance: 30/17mΩ Mounting: SMD Gate charge: 12/23nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ710DT-T1-GE3 | VISHAY | SIZ710DT-T1-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ710DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 20V 16A 6PWRPAIR Packaging: Cut Tape (CT) Package / Case: 6-PowerPair™ Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W, 48W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 16A, 35A Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V Rds On (Max) @ Id, Vgs: 6.8mOhm @ 19A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-PowerPair™ | auf Bestellung 19342 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ710DT-T1-GE3 | Vishay | Trans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ710DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 20V 16A 6PWRPAIR Packaging: Tape & Reel (TR) Package / Case: 6-PowerPair™ Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W, 48W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 16A, 35A Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V Rds On (Max) @ Id, Vgs: 6.8mOhm @ 19A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-PowerPair™ | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ710DT-T1-GE3 | Vishay Semiconductors | MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7 | auf Bestellung 3609 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ720DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 20V 16A 6POWERPAIR Packaging: Tape & Reel (TR) Package / Case: 6-PowerPair™ Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W, 48W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 16A Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V Rds On (Max) @ Id, Vgs: 8.7mOhm @ 16.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-PowerPair™ | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ720DT-T1-GE3 | Vishay / Siliconix | MOSFET N-CHANNEL 20-V (D-S) MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ728DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 25V 16A 6-POWERPAIR | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ728DT-T1-GE3 | Vishay / Siliconix | MOSFET 25V Vds 20V Vgs PowerPAIR 6 x 3.7 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SIZ730DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR | auf Bestellung 314 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ730DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 16A/35A 6-Pin PowerPAIR T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ730DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ730DT-T1-GE3 | Vishay / Siliconix | MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 3.7 | auf Bestellung 5506 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SIZ790DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 12.9A/23.4A 6-Pin PowerPAIR T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ790DT-T1-GE3 | Vishay / Siliconix | MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 3.7 | auf Bestellung 1782 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SIZ790DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ790DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ900DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 24A POWERPAIR | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ900DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 24A POWERPAIR | auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SIZ900DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 24A POWERPAIR | auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SIZ900DT-T1-GE3 | Vishay / Siliconix | MOSFET 30V 24/28A 48/100W 7.2/3.9mOhms @ 10V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SIZ902DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 14.3A/16A 8-Pin PowerPAIR T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ902DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 14.3A/16A 8-Pin PowerPAIR T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ902DT-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 16A; 29/66W Type of transistor: N-MOSFET x2 Mounting: SMD Kind of package: reel; tape Power dissipation: 29/66W On-state resistance: 14.5/8.3mΩ Polarisation: unipolar Technology: TrenchFET® Gate charge: 21/65nC Drain-source voltage: 30V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50...80A Drain current: 16A | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ902DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 16A 8POWERPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 29W, 66W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ902DT-T1-GE3 | Vishay Semiconductors | MOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5 | auf Bestellung 2734 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ902DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 14.3A/16A 8-Pin PowerPAIR T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ902DT-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 16A; 29/66W Type of transistor: N-MOSFET x2 Mounting: SMD Kind of package: reel; tape Power dissipation: 29/66W On-state resistance: 14.5/8.3mΩ Polarisation: unipolar Technology: TrenchFET® Gate charge: 21/65nC Drain-source voltage: 30V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50...80A Drain current: 16A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ902DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 16A 8POWERPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 29W, 66W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) | auf Bestellung 2922 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ904DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 12A POWERPAIR | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SIZ904DT-T1-GE3 | Vishay Semiconductors | MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5 | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ904DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 9.5A/14.5A 8-Pin PowerPAIR T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ904DT-T1-GE3 | VISHAY | SIZ904DT-T1-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ904DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 12A POWERPAIR | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SIZ910DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 40A POWERPAIR | auf Bestellung 3388 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SIZ910DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 40A POWERPAIR | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SIZ910DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 22A/32A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ910DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 40A POWERPAIR | auf Bestellung 3388 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SIZ914DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 16A PWRPAIR | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ914DT-T1-GE3 | Vishay | Trans MOSFET N-CH Si 30V 16A/40A 8-Pin PowerPAIR EP | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ914DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 16A PWRPAIR | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ914DT-T1-GE3 | Vishay / Siliconix | MOSFET 30V 16/40A 23/100W TrenchFET | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SIZ916DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 16A/40A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ916DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 16A POWERPAIR | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ916DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 16A POWERPAIR | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ918DT-T1-GE3 | Vishay Semiconductors | MOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5 | auf Bestellung 1700 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ918DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 16A 8PWRPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 29W, 100W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A, 28A Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ918DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 14.3A/26A 8-Pin PowerPAIR EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ918DT-T1-GE3 | VISHAY | SIZ918DT-T1-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ918DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 16A 8PWRPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 29W, 100W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A, 28A Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active | auf Bestellung 20402 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ920DT-T1-GE3 Produktcode: 118521 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
SIZ920DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 40A 8POWERPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 39W, 100W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Rds On (Max) @ Id, Vgs: 7.1mOhm @ 18.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ920DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 22A/32A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ920DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 40A 8POWERPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 39W, 100W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Rds On (Max) @ Id, Vgs: 7.1mOhm @ 18.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ926DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 25V 40A 8PWRPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20.2W, 40W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ926DT-T1-GE3 | VISHAY | SIZ926DT-T1-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ926DT-T1-GE3 | Vishay | Trans MOSFET N-CH 25V 22A/37A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ926DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 25V 40A 8PWRPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20.2W, 40W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ926DT-T1-GE3 | Vishay | Dual N-Channel 25 V (D-S) MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ926DT-T1-GE3 | Vishay Semiconductors | MOSFET 25V Vds 16V Vgs PowerPAIR 6 x 5 | auf Bestellung 690 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ980BDT-T1-GE3 | VISHAY | Category: Multi channel transistors Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V Type of transistor: N-MOSFET x2 + Schottky On-state resistance: 7.12/1.72mΩ Power dissipation: 20/66W Polarisation: unipolar Drain current: 54.8/197A Kind of package: reel; tape Drain-source voltage: 30V Gate charge: 18/79nC Mounting: SMD Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: 90...130A | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ980BDT-T1-GE3 | VISHAY | Description: VISHAY - SIZ980BDT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 197A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 197A Drain-Source-Durchgangswiderstand, p-Kanal: 817µohm Verlustleistung, p-Kanal: 66W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV SkyFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 817µohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal + Schottky Verlustleistung, n-Kanal: 66W Betriebstemperatur, max.: 150°C SVHC: Lead (19-Jan-2021) | auf Bestellung 11814 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ980BDT-T1-GE3 | VISHAY | Category: Multi channel transistors Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V Type of transistor: N-MOSFET x2 + Schottky On-state resistance: 7.12/1.72mΩ Power dissipation: 20/66W Polarisation: unipolar Drain current: 54.8/197A Kind of package: reel; tape Drain-source voltage: 30V Gate charge: 18/79nC Mounting: SMD Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: 90...130A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ980BDT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 23.7A/54.3A 8-Pin PowerPAIR EP | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ980BDT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 23.7A/54.3A 8-Pin PowerPAIR EP | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ980BDT-T1-GE3 | VISHAY | Description: VISHAY - SIZ980BDT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 197A Dauer-Drainstrom Id, p-Kanal: 197A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 197A Drain-Source-Durchgangswiderstand, p-Kanal: 817µohm Verlustleistung, p-Kanal: 66W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pins Produktpalette: TrenchFET Gen IV SkyFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 817µohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal + Schottky Verlustleistung, n-Kanal: 66W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 11794 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ980BDT-T1-GE3 | Vishay Semiconductors | MOSFETs N-CHANNEL 30-V (D-S) PowerPAIR 6 x 5 | auf Bestellung 15447 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ980BDT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active | auf Bestellung 13593 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ980BDT-T1-GE3 Produktcode: 173623 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
SIZ980BDT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ980DT-T1-GE3 | Vishay Semiconductors | MOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5 | auf Bestellung 3242 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ980DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 20A 8PWRPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20W, 66W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 4600pF @ 15V Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 35nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ980DT-T1-GE3 | VISHAY | Description: VISHAY - SIZ980DT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 60 A, 0.0011 ohm, PowerPAIR, Oberflächenmontage SVHC: Lead (19-Jan-2021) | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ980DT-T1-GE3 | VISHAY | Category: Multi channel transistors Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V Type of transistor: N-MOSFET x2 + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 20/60A Pulsed drain current: 90...130A Power dissipation: 20/66W On-state resistance: 10/2.2mΩ Mounting: SMD Gate charge: 18/77nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ980DT-T1-GE3 | VISHAY | Description: VISHAY - SIZ980DT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 60 A, 0.0011 ohm, PowerPAIR, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 60 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 66 Gate-Source-Schwellenspannung, max.: 2.2 Bauform - Transistor: PowerPAIR Anzahl der Pins: 8 Produktpalette: TrenchFET Wandlerpolarität: n-Kanal + Schottky Betriebswiderstand, Rds(on): 0.0011 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 SVHC: Lead (19-Jan-2021) | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ980DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 20A 8PWRPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20W, 66W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 4600pF @ 15V Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 35nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active | auf Bestellung 7148 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ980DT-T1-GE3 | VISHAY | Category: Multi channel transistors Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V Type of transistor: N-MOSFET x2 + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 20/60A Pulsed drain current: 90...130A Power dissipation: 20/66W On-state resistance: 10/2.2mΩ Mounting: SMD Gate charge: 18/77nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ980DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 20A/60A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ980DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 20A/60A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ988DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2 N-CH 30V 8-POWERPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20.2W, 40W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 2425pF @ 15V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, 23.1nC @ 4.5V Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA Supplier Device Package: 8-PowerPair® Part Status: Active | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ988DT-T1-GE3 | Vishay / Siliconix | MOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5 | auf Bestellung 4167 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ988DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2 N-CH 30V 8-POWERPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20.2W, 40W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 2425pF @ 15V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, 23.1nC @ 4.5V Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA Supplier Device Package: 8-PowerPair® Part Status: Active | auf Bestellung 10248 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ998BDT | Vishay | Vishay | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ998BDT | Vishay | Trans MOSFET N-CH 30V 23.7A/36.2A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ998BDT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 2130pF @ 15V Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 46.7nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active | auf Bestellung 17917 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ998BDT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 23.7A/36.2A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ998BDT-T1-GE3 | VISHAY | Description: VISHAY - SIZ998BDT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 94.6 A, 94.6 A, 0.0018 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 94.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 94.6A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0018ohm Verlustleistung, p-Kanal: 32.9W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0018ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal + Schottky Verlustleistung, n-Kanal: 32.9W Betriebstemperatur, max.: 150°C SVHC: Lead (19-Jan-2021) | auf Bestellung 2905 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ998BDT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 2130pF @ 15V Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 46.7nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ998BDT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 23.7A/36.2A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ998BDT-T1-GE3 | VISHAY | Description: VISHAY - SIZ998BDT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 94.6 A, 94.6 A, 0.0018 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 94.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 94.6A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0018ohm Verlustleistung, p-Kanal: 32.9W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0018ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal + Schottky Verlustleistung, n-Kanal: 32.9W Betriebstemperatur, max.: 150°C SVHC: Lead (19-Jan-2021) | auf Bestellung 2905 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ998BDT-T1-GE3 | Vishay / Siliconix | MOSFET Dual N-Ch 30V(S1-S2) | auf Bestellung 2779 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ998BDT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 23.7A/36.2A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ998DT-T1-GE3 | VISHAY | Description: VISHAY - SIZ998DT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 60 A, 60 A, 0.0022 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 60A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0022ohm Verlustleistung, p-Kanal: 32.9W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0022ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal + Schottky Verlustleistung, n-Kanal: 32.9W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 11748 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ998DT-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V Type of transistor: N-MOSFET x2 + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 20/60A Pulsed drain current: 90...130A Power dissipation: 20.2/32.9W On-state resistance: 10/3.8mΩ Mounting: SMD Gate charge: 18/44.3nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ998DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 20A 8PWRPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20.2W, 32.9W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 2620pF @ 15V Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 19.8nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ998DT-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V Type of transistor: N-MOSFET x2 + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 20/60A Pulsed drain current: 90...130A Power dissipation: 20.2/32.9W On-state resistance: 10/3.8mΩ Mounting: SMD Gate charge: 18/44.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZ998DT-T1-GE3 | Vishay Semiconductors | MOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5 | auf Bestellung 101 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ998DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 20A/60A 8-Pin PowerPAIR EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ998DT-T1-GE3 | VISHAY | Description: VISHAY - SIZ998DT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 60 A, 60 A, 0.0022 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 60A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0022ohm Verlustleistung, p-Kanal: 32.9W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0022ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal + Schottky Verlustleistung, n-Kanal: 32.9W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 11748 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZ998DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 20A 8PWRPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20.2W, 32.9W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 2620pF @ 15V Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 19.8nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active | auf Bestellung 13250 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ998DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 20A/60A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZA20 | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SIZA60 | auf Bestellung 400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SIZAL20 | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SIZAL20/L291 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SIZAS4 | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SIZB | SHINDENGEN | auf Bestellung 2200 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
SIZB20 | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SIZB20/Z27N | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SIZB40 | auf Bestellung 8500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SIZB4072 | auf Bestellung 344 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SIZB60 | auf Bestellung 400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SIZB60-7072 | auf Bestellung 2774 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SIZE 5 COAX PC TERM BKW | ITT | SIZE 5 COAX PC TERM BKW | auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZF300DT-T1-GE3 | VISHAY | SIZF300DT-T1-GE3 Multi channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF300DT-T1-GE3 | Vishay Semiconductors | MOSFET 30V Vds; 16/-12V Vgs PowerPAIR F 3.3x3.3 | auf Bestellung 970 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF300DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 23A/34A 6-Pin PowerPAIR T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF300DT-T1-GE3 | VISHAY | Description: VISHAY - SIZF300DT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 141 A, 141 A, 0.0016 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 141A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 141A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0016ohm Verlustleistung, p-Kanal: 74W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 9Pin(s) Produktpalette: TrenchFET Gen IV SkyFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0016ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 74W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZF300DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 23A 8POWERPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF300DT-T1-GE3 | Vishay | Transistor N-Channel MOSFET; 30V; 75A; 4,5mOhm; 20V; 75W; -55°C ~ 150°C; SIZF300DT-T1-GE3 SIZF300DT TSIZF300dt Anzahl je Verpackung: 10 Stücke | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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SIZF300DT-T1-GE3 | VISHAY | Description: VISHAY - SIZF300DT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 141 A, 141 A, 0.0016 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 141A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 141A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0016ohm Verlustleistung, p-Kanal: 74W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 9Pin(s) Produktpalette: TrenchFET Gen IV SkyFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0016ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 74W Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZF300DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 23A 8POWERPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active | auf Bestellung 2840 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF360DT-T1-GE3 | Vishay Siliconix | Description: MOSFET DL N-CH 30V PPAIR 3X3FDC Packaging: Tape & Reel (TR) Package / Case: 6-PowerPair™ Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-PowerPair™ Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF360DT-T1-GE3 | Vishay Siliconix | Description: MOSFET DL N-CH 30V PPAIR 3X3FDC Packaging: Cut Tape (CT) Package / Case: 6-PowerPair™ Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-PowerPair™ Part Status: Active | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SIZF360DT-T1-GE3 | Vishay Semiconductors | MOSFET 30-V W/SCHOTTKY PowerPAIR 3 x 3FDC | auf Bestellung 5936 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF360DT-T1-GE3 | Vishay | N Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF4800LDT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 80V 10A PWRPAIR Packaging: Tape & Reel (TR) Package / Case: 12-PowerPair™ Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.5W (Ta), 56.8W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 40V Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAIR® 3x3FS | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF4800LDT-T1-GE3 | Vishay / Siliconix | MOSFET N-CHANNEL 30 V PWRPAIR3X3FS | auf Bestellung 2837 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF4800LDT-T1-GE3 | Vishay | Dual N-Channel 80 V (D-S) MOSFET PowerPAIR FS 3 x 3, 19 m @ 10V, 23.8 m @ 4.5V | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF4800LDT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 80V 10A PWRPAIR Packaging: Cut Tape (CT) Package / Case: 12-PowerPair™ Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.5W (Ta), 56.8W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 40V Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAIR® 3x3FS | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF5300DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 35A PWRPAIR Packaging: Cut Tape (CT) Package / Case: 12-PowerPair™ Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.5W (Ta), 56.8W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 125A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 15V Rds On (Max) @ Id, Vgs: 2.43mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAIR® 3x3FS Part Status: Active | auf Bestellung 5314 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF5300DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 35A PWRPAIR Packaging: Tape & Reel (TR) Package / Case: 12-PowerPair™ Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.5W (Ta), 56.8W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 125A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 15V Rds On (Max) @ Id, Vgs: 2.43mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAIR® 3x3FS Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF5300DT-T1-GE3 | Vishay Semiconductors | MOSFET N-CHANNEL 30 V MOSFET PWRPAK | auf Bestellung 9836 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF5302DT-T1-RE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 28.1A PWRPAIR Packaging: Cut Tape (CT) Package / Case: 12-PowerPair™ Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.8W (Ta), 48.1W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 100A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAIR® 3x3FS Part Status: Active | auf Bestellung 5096 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF5302DT-T1-RE3 | VISHAY | Description: VISHAY - SIZF5302DT-T1-RE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 100 A, 100 A, 0.0027 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 100A Dauer-Drainstrom Id, p-Kanal: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 100A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0027ohm Verlustleistung, p-Kanal: 48.1W euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 12Pin(s) Produktpalette: TrenchFET Gen V Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0027ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 48.1W Betriebstemperatur, max.: 150°C SVHC: No SVHC (17-Jan-2022) | auf Bestellung 14725 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZF5302DT-T1-RE3 | Vishay Semiconductors | MOSFETs PWRPR N CHAN 30V | auf Bestellung 10328 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF5302DT-T1-RE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 28.1A PWRPAIR Packaging: Tape & Reel (TR) Package / Case: 12-PowerPair™ Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.8W (Ta), 48.1W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 100A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAIR® 3x3FS Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF5302DT-T1-RE3 | VISHAY | Description: VISHAY - SIZF5302DT-T1-RE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 100 A, 100 A, 0.0027 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 100A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0027ohm Verlustleistung, p-Kanal: 48.1W euEccn: NLR Bauform - Transistor: PowerPAIR Drain-Source-Durchgangswiderstand, n-Kanal: 0.0027ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 48.1W | auf Bestellung 14725 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZF5302DT-T1-RE3-X | Vishay | Vishay | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF640DT-T1-GE3 | Vishay Semiconductors | MOSFET | auf Bestellung 12050 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SIZF906ADT-T1-GE3 | Vishay / Siliconix | MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F | auf Bestellung 5804 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF906ADT-T1-GE3 | VISHAY | SIZF906ADT-T1-GE3 Multi channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF906ADT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 27A 8POWERPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 200nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF906ADT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 27A/52A 8-Pin PowerPAIR EP T/R | auf Bestellung 5805 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZF906ADT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 27A 8POWERPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 200nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF906ADT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 27A/52A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF906ADT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 27A/52A 8-Pin PowerPAIR EP T/R | auf Bestellung 5805 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZF906BDT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 36A 8PWRPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 0.68mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF906BDT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 36A/63A 8-Pin PowerPAIR EP T/R | auf Bestellung 2010 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZF906BDT-T1-GE3 | VISHAY | Description: VISHAY - SIZF906BDT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 257 A, 257 A, 0.00045 ohm tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 257A Dauer-Drainstrom Id, p-Kanal: 257A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 257A Drain-Source-Durchgangswiderstand, p-Kanal: 450µohm Verlustleistung Pd: 83W Gate-Source-Schwellenspannung, max.: 2.2V Verlustleistung, p-Kanal: 83W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 450µohm productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 83W Betriebswiderstand, Rds(on): 450µohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C SVHC: Lead (19-Jan-2021) | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZF906BDT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 36A 8PWRPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 0.68mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) | auf Bestellung 22299 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF906BDT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 36A/63A 8-Pin PowerPAIR EP T/R | auf Bestellung 2010 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZF906BDT-T1-GE3 | Vishay / Siliconix | MOSFETs DUAL N-CH 30-V (D-S) W/SCHOTT | auf Bestellung 23702 Stücke: Lieferzeit 10-14 Tag (e) |
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SiZF906DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 60A 8POWERPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TA) Technology: MOSFET (Metal Oxide) Power - Max: 38W (Tc), 83W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, 92nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF906DT-T1-GE3 Produktcode: 186042 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
SIZF906DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 27A/52A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SiZF906DT-T1-GE3 | Vishay / Siliconix | MOSFET 30V Vds 20V Vgs PowerPAIR F 6 x 5 | auf Bestellung 8964 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF906DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 27A/52A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SiZF906DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 60A 8POWERPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TA) Technology: MOSFET (Metal Oxide) Power - Max: 38W (Tc), 83W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, 92nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active | auf Bestellung 16133 Stücke: Lieferzeit 10-14 Tag (e) |
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SiZF906DT-T1-GE3 | VISHAY | SIZF906DT-T1-GE3 Multi channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF914DT-T1-GE3 | Vishay / Siliconix | MOSFETs 25V Vds 20V Vgs PowerPAIR 6 x 5F | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF914DT-T1-GE3 | Vishay | Dual N-Channel 25 V (D-S) MOSFET with Schottky Diode | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF914DT-T1-GE3 | Vishay Siliconix | Description: DUAL N-CH 25-V (D-S) MOSFET W/SC | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF914DT-T1-GE3 | VISHAY | SIZF914DT-T1-GE3 Multi channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF916DT-T1-GE3 | VISHAY | SIZF916DT-T1-GE3 Multi channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF916DT-T1-GE3 | VISHAY | Description: VISHAY - SIZF916DT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 60 A, 900 µohm, PowerPAIR, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 60 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 60 Gate-Source-Schwellenspannung, max.: 2.2 Bauform - Transistor: PowerPAIR Anzahl der Pins: 8 Produktpalette: TrenchFET Gen IV, SkyFET Wandlerpolarität: n-Kanal + Schottky Betriebswiderstand, Rds(on): 900 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 SVHC: Lead (19-Jan-2021) | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF916DT-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH DUAL 30V Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, 4320pF @ 15V Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 95nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active | auf Bestellung 922 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF916DT-T1-GE3 | Vishay Semiconductors | MOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5F | auf Bestellung 2920 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF916DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 23A/45A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF916DT-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH DUAL 30V Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, 4320pF @ 15V Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 95nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF918DT-T1-GE3 | Vishay Siliconix | Description: MOSFET DUAL N-CH 30V POWERPAIR 6 | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF918DT-T1-GE3 | Vishay Semiconductors | MOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5F | auf Bestellung 6153 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF918DT-T1-GE3 | Vishay | Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF918DT-T1-GE3 | VISHAY | SIZF918DT-T1-GE3 Multi channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF918DT-T1-GE3 | VISHAY | Description: VISHAY - SIZF918DT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 60 A, 0.0012 ohm, PowerPAIR, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 60 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 50 Bauform - Transistor: PowerPAIR Anzahl der Pins: 8 Produktpalette: TrenchFET Gen IV, SkyFET Wandlerpolarität: n-Kanal + Schottky Betriebswiderstand, Rds(on): 0.0012 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 2.2 SVHC: Lead (19-Jan-2021) | auf Bestellung 5957 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIZF920DT-T1-GE3 | Vishay Siliconix | Description: MOSFET DL N-CH 30V POWERPAIR 6X5 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active | auf Bestellung 2211 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF920DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 28A/49A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF920DT-T1-GE3 | Vishay Siliconix | Description: MOSFET DL N-CH 30V POWERPAIR 6X5 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF920DT-T1-GE3 | Vishay / Siliconix | MOSFETs Dual 30V Vds PowerPAIR 6x5F | auf Bestellung 11012 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF920DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 28A/49A 8-Pin PowerPAIR EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIZF920DT-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 28A/49A 8-Pin PowerPAIR EP T/R | auf Bestellung 11890 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZF928DT-T1-GE3 | Vishay / Siliconix | MOSFETs PWRPR N CHAN 30V | auf Bestellung 2890 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF928DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 33A 8PWRPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc) Rds On (Max) @ Id, Vgs: 2.45mOhm @ 10A, 10V, 0.75mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active | auf Bestellung 6064 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF928DT-T1-GE3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 33A 8PWRPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc) Rds On (Max) @ Id, Vgs: 2.45mOhm @ 10A, 10V, 0.75mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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