Produkte > RSJ
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
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RSJ-0352-2-NL | RDI, Inc. | Description: 3.5 MM MONO JACK | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
RSJ-0356A-U-N-NL | RDI Electronics | ACCT#000458287 12/31/15 | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ-0356A-U-NL | RDI Electronics | .5MM STEREO JACK WITH REAR C | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ-1500-100 | Riedon | Description: RES CHAS MNT 67 UOHM 0.25% Tolerance: ±0.25% Lead Style: 4-Terminal Features: Current Sense, Flame Proof, Non-Inductive, Pulse Withstanding, Safety Packaging: Bulk Package / Case: Rectangular Case - Open Temperature Coefficient: ±15ppm/°C Size / Dimension: 11.250" L x 3.000" W (285.75mm x 76.20mm) Composition: Metal Element Operating Temperature: 30°C ~ 70°C Mounting Feature: Flanges Resistance: 67 µOhms | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ-3558S-1-NL | RDI, Inc. | Description: 3.5MM STEREO JACK Features: Board Guide, Board Lock Packaging: Tray Connector Type: Phone Jack, Dual Gender: Female Mounting Type: Through Hole, Right Angle Shielding: Shielded Number of Positions/Contacts: 2 Sets of 3 Conductors, 10 Contacts Internal Switch(s): 2 Sets of Two Switches Signal Lines: Stereo (3 Conductor, TRS) Termination: Solder Insulation Color: Black Actual Diameter: 0.142" (3.60mm) Industry Recognized Mating Diameter: 3.50mm (0.141", 1/8", Mini Plug) - Headphone Part Status: Active | auf Bestellung 1300 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ-360-NL | RDI, Inc. | Description: 3.5MM PHONE JACK Packaging: Bag Connector Type: Phone Jack Gender: Female Mounting Type: Through Hole, Right Angle Shielding: Unshielded Number of Positions/Contacts: 2 Conductors, 3 Contacts Internal Switch(s): Single Switch Signal Lines: Mono Termination: Solder Eyelet(s) Actual Diameter: 0.142" (3.60mm) Industry Recognized Mating Diameter: 3.50mm (0.141", 1/8", Mini Plug) - Headphone | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ-362-NL | RDI, Inc. | Description: 3.5MM AUDIO JACK Packaging: Bag Features: Board Guide Connector Type: Phone Jack Gender: Female Mounting Type: Through Hole, Right Angle Shielding: Unshielded Number of Positions/Contacts: 3 Conductors, 5 Contacts Internal Switch(s): Two Switches Signal Lines: Mono Termination: Solder Actual Diameter: 0.142" (3.60mm) | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ-370-NL | RDI, Inc. | Description: 3.5MM MONO JACK Packaging: Bag Connector Type: Phone Jack Gender: Female Mounting Type: Through Hole, Right Angle Shielding: Unshielded Number of Positions/Contacts: 2 Conductors, 3 Contacts Internal Switch(s): Single Switch Signal Lines: Mono Termination: Kinked Pin, Solder Actual Diameter: 0.142" (3.60mm) | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ-372-NL | RDI Electronics | Audio Jacks - 3.5mm | auf Bestellung 264 Stücke: Lieferzeit 14-21 Tag (e) |
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RSJ-372-NL | RDI Electronics | Audio Jacks - 3.5mm | auf Bestellung 264 Stücke: Lieferzeit 14-21 Tag (e) |
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RSJ-500-NL | RDI Electronics | JACKS - AUDIO JACKS - 3.5MM | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ-500-NL | RDI, Inc. | Description: 3.5MM STEREO JACK Packaging: Tray Connector Type: Phone Jack Gender: Female Mounting Type: Through Hole, Right Angle Shielding: Unshielded Operating Temperature: -25°C ~ 100°C Number of Positions/Contacts: 3 Conductors, 5 Contacts Internal Switch(s): Two Switches Signal Lines: Stereo (3 Conductor, TRS) Termination: Kinked Pin, Solder Industry Recognized Mating Diameter: 3.20mm ID, 9.00mm OD (RCA) Part Status: Active | auf Bestellung 1300 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ-B57-NL | RDI, Inc. | Description: 3.5MM JACK Packaging: Bag Connector Type: Phone Jack Gender: Female Mounting Type: Through Hole Shielding: Unshielded Number of Positions/Contacts: 3 Conductors, 5 Contacts Internal Switch(s): Two Switches Signal Lines: Stereo (3 Conductor, TRS) Termination: Solder Tabs Actual Diameter: 0.142" (3.60mm) Industry Recognized Mating Diameter: 3.50mm (0.141", 1/8", Mini Plug) - Headphone Part Status: Active | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ-BK | Altech Corporation | Description: JUMPER FOR RSM BLK 20POSITION | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ-BK | Altech | Relay Sockets & Fixings BLACK JUMPER For RSM | auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ-E-R | OMEGA | Description: OMEGA - RSJ-E-R - Thermoelementsteckverbinder, Buchse, Typ E, Produktreihe RSJ Thermoelement: E Ausführung: Buchse Produktpalette: RSJ Series SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ-J-R | OMEGA | Description: OMEGA - RSJ-J-R - Thermoelement-Steckverbinder, Einbaubuchse, Typ J, Produktreihe RSJ, runde Bohrung, Standardgröße tariffCode: 85369010 Thermoelement: J productTraceability: No rohsCompliant: YES Ausführung: Buchse euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: RMJ Series SVHC: No SVHC (17-Jan-2022) | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
RSJ-J-R. | OMEGA | Description: OMEGA - RSJ-J-R. - THERMOCOUPLE CONNECTOR, J TYPE, RCPT tariffCode: 85366990 Thermoelement: J productTraceability: No rohsCompliant: YES Ausführung: Socket euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES directShipCharge: 25 usEccn: EAR99 Produktpalette: RSJ Series SVHC: No SVHC (17-Jan-2022) | auf Bestellung 642 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
RSJ-K-R | OMEGA | Description: OMEGA - RSJ-K-R - Thermoelement-Steckverbinder, Einbaubuchse, Typ K, Produktreihe RSJ, runde Bohrung, Standardgröße tariffCode: 85366990 Thermoelement: K productTraceability: No rohsCompliant: YES Ausführung: Buchse euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: RMJ Series SVHC: No SVHC (17-Jan-2022) | auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
RSJ-K-R-ROHS | OMEGA | Description: OMEGA - RSJ-K-R-ROHS - Thermoelementsteckverbinder, Buchse, Typ K, Produktreihe RSJ Thermoelement: K Ausführung: Buchse Produktpalette: RSJ Series SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ-K-R. | OMEGA | Description: OMEGA - RSJ-K-R. - THERMOCOUPLE CONNECTOR, K TYPE, RCPT tariffCode: 85366990 Thermoelement: K productTraceability: No rohsCompliant: YES Ausführung: Socket euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES directShipCharge: 25 usEccn: EAR99 Produktpalette: RSJ Series SVHC: No SVHC (17-Jan-2022) | auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
RSJ-KI-R | OMEGA | Description: OMEGA - RSJ-KI-R - Thermoelement-Steckverbinder, Einbaubuchse, Typ K, Produktreihe RSJ, runde Bohrung, Standardgröße tariffCode: 85366990 Thermoelement: K productTraceability: No rohsCompliant: YES Ausführung: Buchse euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: RMJ Series SVHC: No SVHC (17-Jan-2022) | auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
RSJ-N-R | OMEGA | Description: OMEGA - RSJ-N-R - Thermoelementsteckverbinder, Buchse, Typ N, rund, Produktreihe RSJ Thermoelement: N Ausführung: Buchse Produktpalette: RSJ Series SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ-NI-R | OMEGA | Description: OMEGA - RSJ-NI-R - Thermoelementsteckverbinder, Buchse, Typ N, rund, Produktreihe RSJ Thermoelement: N Ausführung: Buchse Produktpalette: RSJ Series SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ-R/S-R | OMEGA | Description: OMEGA - RSJ-R/S-R - Thermoelementsteckverbinder, Buchse, Typ R/S, rund, Produktreihe RSJ Thermoelement: R, S Ausführung: Buchse Produktpalette: RSJ Series SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ-R/SI-R | OMEGA | Description: OMEGA - RSJ-R/SI-R - Thermoelementsteckverbinder, Buchse, Typ R/S, rund, Produktreihe RSJ Thermoelement: R, S Ausführung: Buchse Produktpalette: RSJ Series SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ-T-R | OMEGA | Description: OMEGA - RSJ-T-R - Thermoelementsteckverbinder, Buchse, Typ T, rund, Produktreihe RSJ Thermoelement: T Ausführung: Buchse Produktpalette: RSJ Series SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ-TI-R | OMEGA | Description: OMEGA - RSJ-TI-R - Thermoelementsteckverbinder, Buchse, Typ T, rund, Produktreihe RSJ Thermoelement: T Ausführung: Buchse Produktpalette: RSJ Series SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ-U-R | OMEGA | Description: OMEGA - RSJ-U-R - Thermoelement-Steckverbinder, Einbaubuchse, Typ U, Produktreihe RSJ, runde Bohrung, Standardgröße tariffCode: 85369010 Thermoelement: U productTraceability: No rohsCompliant: YES Ausführung: Buchse euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: RSJ Series SVHC: No SVHC (10-Jun-2022) | auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
RSJ-U-R-ROHS | OMEGA | Description: OMEGA - RSJ-U-R-ROHS - Thermoelement-Steckverbinder, Produktreihe RSJ, Einbaubuchse, rund, Typ U, Buchse Thermoelement: U Ausführung: Buchse Produktpalette: RSJ SVHC: No SVHC (17-Jan-2022) | auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
RSJ10HN06 | ROHM Semiconductor | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ10HN06TL | Rohm Semiconductor | Description: MOSFET N-CH 60V 100A LPTS | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ10HN06TL | ROHM Semiconductor | MOSFET 4V Drive N-Ch MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ10HN06TL | Rohm Semiconductor | Description: MOSFET N-CH 60V 100A LPTS | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ151P10TL | ROHM SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -15A Pulsed drain current: -30A Power dissipation: 50W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.22Ω Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ151P10TL | Rohm Semiconductor | Trans MOSFET P-CH 100V 15A Automotive 3-Pin(2+Tab) LPTS T/R | auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) |
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RSJ151P10TL | ROHM | Description: ROHM - RSJ151P10TL - Leistungs-MOSFET, p-Kanal, 100 V, 15 A, 0.085 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 50W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.085ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 749 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
RSJ151P10TL | ROHM Semiconductor | MOSFET 4V Drive Pch MOSFET Drive Pch | auf Bestellung 182 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ151P10TL | Rohm Semiconductor | Description: MOSFET P-CH 100V 15A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 15A, 10V Power Dissipation (Max): 1.35W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ151P10TL | ROHM | Description: ROHM - RSJ151P10TL - Leistungs-MOSFET, p-Kanal, 100 V, 15 A, 0.085 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 50W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.085ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 749 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
RSJ151P10TL | ROHM SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -15A Pulsed drain current: -30A Power dissipation: 50W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.22Ω Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ151P10TL | Rohm Semiconductor | Trans MOSFET P-CH 100V 15A Automotive 3-Pin(2+Tab) LPTS T/R | auf Bestellung 583 Stücke: Lieferzeit 14-21 Tag (e) |
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RSJ151P10TL | Rohm Semiconductor | Description: MOSFET P-CH 100V 15A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 15A, 10V Power Dissipation (Max): 1.35W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V | auf Bestellung 3072 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ175 | 05+ | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
RSJ175 | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
RSJ175 | 05+ | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
RSJ250P10FRATL | ROHM - Japan | Transistor P-Channel MOSFET; 100V; 20V; 25A; 45mOhm; 50W; -55°C~150°C; RSJ250P10FRATL Rohm Semiconductor TRSJ250p10fratl Anzahl je Verpackung: 2 Stücke | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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RSJ250P10FRATL | Rohm Semiconductor | Description: MOSFET P-CH 100V 25A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2349 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ250P10FRATL | Rohm Semiconductor | Trans MOSFET P-CH Si 100V 25A Automotive AEC-Q101 3-Pin(2+Tab) LPTS T/R | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ250P10FRATL | Rohm Semiconductor | Trans MOSFET P-CH Si 100V 25A Automotive 3-Pin(2+Tab) LPTS T/R | auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
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RSJ250P10FRATL | ROHM SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -25A Pulsed drain current: -50A Power dissipation: 50W Case: TO263 Gate-source voltage: ±20V On-state resistance: 63mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Application: automotive industry | auf Bestellung 333 Stücke: Lieferzeit 14-21 Tag (e) |
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RSJ250P10FRATL | ROHM | Description: ROHM - RSJ250P10FRATL - Leistungs-MOSFET, p-Kanal, 100 V, 25 A, 0.045 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 50W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.045ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 1784 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
RSJ250P10FRATL | ROHM SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -25A Pulsed drain current: -50A Power dissipation: 50W Case: TO263 Gate-source voltage: ±20V On-state resistance: 63mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Application: automotive industry Anzahl je Verpackung: 1 Stücke | auf Bestellung 333 Stücke: Lieferzeit 7-14 Tag (e) |
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RSJ250P10FRATL | Rohm Semiconductor | Description: MOSFET P-CH 100V 25A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ250P10FRATL | ROHM | Description: ROHM - RSJ250P10FRATL - Leistungs-MOSFET, p-Kanal, 100 V, 25 A, 0.045 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 50W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.045ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 1784 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
RSJ250P10FRATL | ROHM Semiconductor | MOSFETs Pch -100V Vds -25A 0.05Rds(on) 60Qg | auf Bestellung 3455 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ250P10TL | Rohm Semiconductor | Trans MOSFET P-CH Si 100V 25A 3-Pin(2+Tab) LPTS T/R | auf Bestellung 480 Stücke: Lieferzeit 14-21 Tag (e) |
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RSJ250P10TL | Rohm Semiconductor | Description: MOSFET P-CH 100V 25A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V | auf Bestellung 11000 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ250P10TL | ROHM Semiconductor | MOSFETs PWR MOSFET LOW RESIST DEVICE | auf Bestellung 6679 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ250P10TL | Rohm Semiconductor | Trans MOSFET P-CH Si 100V 25A 3-Pin(2+Tab) LPTS T/R | auf Bestellung 3576 Stücke: Lieferzeit 14-21 Tag (e) |
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RSJ250P10TL | ROHM | Description: ROHM - RSJ250P10TL - Leistungs-MOSFET, p-Kanal, 100 V, 25 A, 0.045 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 50W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: - Drain-Source-Durchgangswiderstand: 0.045ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 1942 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
RSJ250P10TL | ROHM SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -25A Pulsed drain current: -50A Power dissipation: 50W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ250P10TL | Rohm Semiconductor | Description: MOSFET P-CH 100V 25A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V | auf Bestellung 12060 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ250P10TL | Rohm Semiconductor | Trans MOSFET P-CH Si 100V 25A 3-Pin(2+Tab) LPTS T/R | auf Bestellung 6743 Stücke: Lieferzeit 14-21 Tag (e) |
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RSJ250P10TL | ROHM SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -25A Pulsed drain current: -50A Power dissipation: 50W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ250P10TL | ROHM | Description: ROHM - RSJ250P10TL - Leistungs-MOSFET, p-Kanal, 100 V, 25 A, 0.045 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 50W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: - Drain-Source-Durchgangswiderstand: 0.045ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 1942 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
RSJ250P10TL LPTS | ROHM - Japan | P-Channel 100V 25A (Ta) 50W (Tc) Surface Mount LPTS TO-263-3, D?Pak (2 Leads + Tab), TO-263AB RSJ250P10TL Rohm Semiconductor TRSJ250p10tl Anzahl je Verpackung: 10 Stücke | auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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RSJ300N10TL | ROHM Semiconductor | MOSFET PWR MOSFET LOW RESIST DEVICE | auf Bestellung 67 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
RSJ300N10TL | Rohm Semiconductor | Description: MOSFET N-CH 100V 30A LPTS | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ301N10FRATL | Rohm Semiconductor | Description: MOSFET N-CH 100V 30A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 10V Power Dissipation (Max): 50W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ301N10FRATL | Rohm Semiconductor | Description: MOSFET N-CH 100V 30A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 10V Power Dissipation (Max): 50W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 3050 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ301N10FRATL | ROHM Semiconductor | MOSFETs Nch 100V Vds 30A 0.036Rds(on) 60Qg | auf Bestellung 727 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ301N10TL | Rohm Semiconductor | Description: NCH 100V 30A POWER MOSFET : RSJ3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 10V Power Dissipation (Max): 50W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-263S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ301N10TL | ROHM Semiconductor | MOSFET MOSFET | auf Bestellung 3812 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ301N10TL | Rohm Semiconductor | Description: NCH 100V 30A POWER MOSFET : RSJ3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 10V Power Dissipation (Max): 50W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-263S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V | auf Bestellung 1266 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ400N06FRATL | Rohm Semiconductor | Description: MOSFET N-CH 60V 40A LPTS | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ400N06FRATL | Rohm Semiconductor | Description: MOSFET N-CH 60V 40A LPTS | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ400N06FRATL | ROHM SEMICONDUCTOR | RSJ400N06FRATL SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ400N06FRATL | ROHM Semiconductor | MOSFET Nch 60V Vds 40A 0.011Rds(on) 52Qg | auf Bestellung 3443 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ400N06TL | Rohm Semiconductor | Description: MOSFET N-CH 60V 40A LPTS | auf Bestellung 137 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
RSJ400N06TL | ROHM Semiconductor | MOSFET 10V Drive Nch MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ400N06TL | Rohm Semiconductor | Description: MOSFET N-CH 60V 40A LPTS | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ400N10FRATL | ROHM Semiconductor | MOSFET Nch 100V Vdss 40A ID TO-263(D2PAK); LPTS | auf Bestellung 661 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ400N10FRATL | ROHM | Description: ROHM - RSJ400N10FRATL - Leistungs-MOSFET, n-Kanal, 100 V, 40 A, 0.019 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 50W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.019ohm SVHC: Lead (17-Jan-2023) | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
RSJ400N10FRATL | Rohm Semiconductor | Description: MOSFET N-CH 100V 40A LPTS | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ400N10FRATL | ROHM | Description: ROHM - RSJ400N10FRATL - Leistungs-MOSFET, n-Kanal, 100 V, 40 A, 0.019 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 50W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.019ohm SVHC: Lead (17-Jan-2023) | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
RSJ400N10FRATL | Rohm Semiconductor | Description: MOSFET N-CH 100V 40A LPTS | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ400N10TL | ROHM | Description: ROHM - RSJ400N10TL - Leistungs-MOSFET, n-Kanal, 100 V, 40 A, 0.019 ohm, TO-263 (D2PAK), Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100 Dauer-Drainstrom Id: 40 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 50 Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.019 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 2.5 SVHC: Lead (08-Jul-2021) | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ400N10TL | ROHM SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 80A; 50W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 50W Drain-source voltage: 100V Drain current: 40A On-state resistance: 30mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 90nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ400N10TL | ROHM SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 80A; 50W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 50W Drain-source voltage: 100V Drain current: 40A On-state resistance: 30mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 90nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ400N10TL | Rohm Semiconductor | Description: MOSFET N-CH 100V 40A LPTS | auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ400N10TL | ROHM Semiconductor | MOSFET 4V Drive Nch MOSFET | auf Bestellung 511 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ400N10TL | Rohm Semiconductor | Description: MOSFET N-CH 100V 40A LPTS | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ4500-1BG | 05+ | auf Bestellung 295 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
RSJ4500-1BG | auf Bestellung 295 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
RSJ450N04TL | Rohm Semiconductor | Description: MOSFET N-CH 40V 45A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: LPTS Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ450N04TL | ROHM Semiconductor | MOSFETs 10V Drive Nch MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ450N04TL | Rohm Semiconductor | Description: MOSFET N-CH 40V 45A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: LPTS Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ450N04TL | Rohm Semiconductor | Description: MOSFET N-CH 40V 45A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: LPTS Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V | auf Bestellung 949 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ451N04FRATL | ROHM | Description: ROHM - RSJ451N04FRATL - Leistungs-MOSFET, n-Kanal, 40 V, 45 A, 0.0095 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 45A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 50W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0095ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
RSJ451N04FRATL | Rohm Semiconductor | Description: MOSFET N-CH 40V 45A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 645 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ451N04FRATL | ROHM Semiconductor | MOSFET Nch 40V Vdss 45A ID TO-263(D2PAK); LPTS | auf Bestellung 188 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ451N04FRATL | ROHM | Description: ROHM - RSJ451N04FRATL - Leistungs-MOSFET, n-Kanal, 40 V, 45 A, 0.0095 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 45A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 50W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0095ohm SVHC: Lead (23-Jan-2024) | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
RSJ451N04FRATL | Rohm Semiconductor | Description: MOSFET N-CH 40V 45A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: LPTS Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ550N10TL | ROHM SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 110A; 100W; D2PAK Drain-source voltage: 100V Drain current: 55A On-state resistance: 18.9mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Gate charge: 143nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 110A Kind of package: reel; tape Mounting: SMD Case: D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ550N10TL | Rohm Semiconductor | Description: MOSFET N-CH 100V 55A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Rds On (Max) @ Id, Vgs: 16.8mOhm @ 27.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ550N10TL | ROHM SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 110A; 100W; D2PAK Drain-source voltage: 100V Drain current: 55A On-state resistance: 18.9mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Gate charge: 143nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 110A Kind of package: reel; tape Mounting: SMD Case: D2PAK Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ550N10TL | ROHM Semiconductor | MOSFET 4V Drive Nch MOSFET | auf Bestellung 1745 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ550N10TL | Rohm Semiconductor | Description: MOSFET N-CH 100V 55A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Rds On (Max) @ Id, Vgs: 16.8mOhm @ 27.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V | auf Bestellung 896 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ650N10TL | Rohm Semiconductor | Description: MOSFET N-CH 100V 65A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Ta) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 32.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10780 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ650N10TL | ROHM SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK Drain-source voltage: 100V Drain current: 65A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Gate charge: 260nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 130A Kind of package: reel; tape Mounting: SMD Case: D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ650N10TL | ROHM SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK Drain-source voltage: 100V Drain current: 65A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Gate charge: 260nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 130A Kind of package: reel; tape Mounting: SMD Case: D2PAK Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
RSJ650N10TL | Rohm Semiconductor | Description: MOSFET N-CH 100V 65A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Ta) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 32.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10780 pF @ 25 V | auf Bestellung 970 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ650N10TL | ROHM Semiconductor | MOSFET 4V Drive Nch MOSFET | auf Bestellung 244 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ800N06TL | Rohm Semiconductor | Description: MOSFET N-CH 60V 80A LPTS | auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
RSJ800N06TL | Rohm Semiconductor | Description: MOSFET N-CH 60V 80A LPTS | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
RSJ800N06TL | ROHM Semiconductor | MOSFET Low Power MCU; LCD 8x64, 48Kbyte ROM, TQFP128 | Produkt ist nicht verfügbar | |||||||||||||||||
RSJMPR10 | Red Lion Controls | Description: RELAY SYSTEM 2 POS JUMPER - RED | Produkt ist nicht verfügbar | |||||||||||||||||
RSJMPR20 | Red Lion Controls | Description: RELAY SYSTEM 2 POS JUMPER - BLUE | Produkt ist nicht verfügbar | |||||||||||||||||
RSJMPR30 | Red Lion Controls | Description: RELAY SYSTEM 2 POS JUMPER - GREY | Produkt ist nicht verfügbar |