RSJ550N10TL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 100V 55A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 16.8mOhm @ 27.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V
auf Bestellung 896 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 6.76 EUR |
| 10+ | 5.67 EUR |
| 100+ | 4.59 EUR |
| 500+ | 4.08 EUR |
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Technische Details RSJ550N10TL Rohm Semiconductor
Description: MOSFET N-CH 100V 55A LPTS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Ta), Rds On (Max) @ Id, Vgs: 16.8mOhm @ 27.5A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: LPTS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V.
Weitere Produktangebote RSJ550N10TL nach Preis ab 3.29 EUR bis 6.81 EUR
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RSJ550N10TL | Hersteller : ROHM Semiconductor |
MOSFET 4V Drive Nch MOSFET |
auf Bestellung 1745 Stücke: Lieferzeit 10-14 Tag (e) |
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| RSJ550N10TL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 110A; 100W; D2PAK Drain-source voltage: 100V Drain current: 55A On-state resistance: 18.9mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Gate charge: 143nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 110A Kind of package: reel; tape Mounting: SMD Case: D2PAK Anzahl je Verpackung: 1000 Stücke |
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RSJ550N10TL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 100V 55A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Rds On (Max) @ Id, Vgs: 16.8mOhm @ 27.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V |
Produkt ist nicht verfügbar |
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| RSJ550N10TL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 110A; 100W; D2PAK Drain-source voltage: 100V Drain current: 55A On-state resistance: 18.9mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Gate charge: 143nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 110A Kind of package: reel; tape Mounting: SMD Case: D2PAK |
Produkt ist nicht verfügbar |