Produkte > IXY
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||
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| IXYA12N250CHV | Littelfuse | IGBT Transistors IGBT XPT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA12N250CHV | IXYS | Description: DISC IGBT XPT-HI VOLTAGE TO-263D Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 16 ns Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A Supplier Device Package: TO-263HV Td (on/off) @ 25°C: 12ns/167ns Switching Energy: 3.56mJ (on), 1.7mJ (off) Test Condition: 1250V, 12A, 10Ohm, 15V Gate Charge: 56 nC Current - Collector (Ic) (Max): 28 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 80 A Power - Max: 310 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA15N65C3D1 | IXYS | IGBTs Disc IGBT XPT-GenX3 TO-263D2 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA15N65C3D1 | IXYS | Description: IGBT PT 650V 38A TO-263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 20 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 15ns/68ns Switching Energy: 270µJ (on), 230µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 19 nC Part Status: Active Current - Collector (Ic) (Max): 38 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA15N65C3D1 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 200W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 19nC Kind of package: tube Turn-on time: 36ns Turn-off time: 102ns | auf Bestellung 231 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYA15N65C3D1 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 200W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 19nC Kind of package: tube Turn-on time: 36ns Turn-off time: 102ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 231 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYA20N120A4HV | Littelfuse | 1200V IGBT Chip Transistor | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N120A4HV | IXYS | IGBTs TO263 1200V 20A XPT | auf Bestellung 2976 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYA20N120A4HV | IXYS | Description: DISC IGBT XPT-GENX4 TO-263D2 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 54 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A Supplier Device Package: TO-263HV IGBT Type: PT Td (on/off) @ 25°C: 12ns/275ns Switching Energy: 3.6mJ (on), 2.75mJ (off) Test Condition: 800mV, 20A, 10Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 135 A Power - Max: 375 W | auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYA20N120A4HV-TRL | Littelfuse | IGBT Transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N120B4HV | IXYS | Description: IGBT 1200V 20A GENX4 XPT TO263D2 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 47 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-263HV IGBT Type: PT Td (on/off) @ 25°C: 15ns/200ns Switching Energy: 3.9mJ (on), 1.6mJ (off) Test Condition: 960mV, 20A, 10Ohm, 15V Gate Charge: 44 nC Part Status: Active Current - Collector (Ic) (Max): 76 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 130 A Power - Max: 375 W | auf Bestellung 345 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYA20N120B4HV | IXYS | IGBTs TO263 1200V 20A XPT | auf Bestellung 1234 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYA20N120B4HV | Littelfuse | 1200V XPT GenX4 IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N120B4HV-TRL | Littelfuse | Disc. IGBT XPT-GenX4 TO-263HV | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N120C3HV | IXYS | IGBTs TO263 1200V 20A XPT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N120C3HV | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2 Type of transistor: IGBT Technology: GenX3™; XPT™ Power dissipation: 278W Case: TO263-2 Mounting: SMD Gate charge: 53nC Kind of package: tube Collector current: 20A Pulsed collector current: 96A Turn-on time: 60ns Turn-off time: 215ns Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N120C3HV | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2 Type of transistor: IGBT Technology: GenX3™; XPT™ Power dissipation: 278W Case: TO263-2 Mounting: SMD Gate charge: 53nC Kind of package: tube Collector current: 20A Pulsed collector current: 96A Turn-on time: 60ns Turn-off time: 215ns Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N120C3HV | Littelfuse | Trans IGBT Chip N-CH 1200V 40A 278000mW | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N120C3HV | IXYS | Description: IGBT Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 29 ns Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Supplier Device Package: TO-263HV Td (on/off) @ 25°C: 20ns/90ns Switching Energy: 1.3mJ (on), 1mJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 53 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 96 A Power - Max: 278 W | auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYA20N120C3HV-TRL | Littelfuse | IXYA20N120C3HV TRL | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N120C3HV-TRL | IXYS | Description: IXYA20N120C3HV TRL Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 29 ns Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Supplier Device Package: TO-263HV Td (on/off) @ 25°C: 20ns/90ns Switching Energy: 1.3mJ (on), 500µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 53 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 96 A Power - Max: 278 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N120C3HV-TRL | IXYS | IGBT Transistors IGBT DISCRETE | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N120C4HV | IXYS | Description: IGBT 1200V 20A X4 HSPEED TO263D2 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 53 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-263HV IGBT Type: PT Td (on/off) @ 25°C: 14ns/160ns Switching Energy: 4.4mJ (on), 1mJ (off) Test Condition: 960mV, 20A, 10Ohm, 15V Gate Charge: 44 nC Part Status: Active Current - Collector (Ic) (Max): 68 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 375 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N120C4HV | IXYS | IGBTs TO263 1200V 20A XPT | auf Bestellung 98 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYA20N120C4HV | Littelfuse | 1200V IGBT Chip Transistor | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N120C4HV-TRL | Littelfuse | Disc. IGBT XPT-GenX4 TO-263HV | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N120C4HV-TRL | IXYS | Description: DISC. IGBT XPT-GENX4 TO-263HV Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N120C4HV-TRL | Littelfuse | IGBTs Disc. IGBT XPT-GenX4 TO-263HV | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N65B3 | IXYS | Description: IGBT Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-263AA Td (on/off) @ 25°C: 12ns/103ns Switching Energy: 500µJ (on), 700µJ (off) Test Condition: 400V, 20A, 20Ohm, 15V Gate Charge: 29 nC Part Status: Active Current - Collector (Ic) (Max): 58 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 108 A Power - Max: 230 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N65C3 | IXYS | IGBTs TO263 650V 20A XPT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N65C3 | IXYS | Description: IGBT Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-263AA Td (on/off) @ 25°C: 19ns/80ns Switching Energy: 430µJ (on), 650µJ (off) Test Condition: 400V, 20A, 20Ohm, 15V Gate Charge: 30 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 105 A Power - Max: 230 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N65C3 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 230W Case: TO263 Mounting: SMD Kind of package: tube Gate charge: 30nC Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Collector current: 20A Pulsed collector current: 105A Turn-on time: 51ns Turn-off time: 132ns | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N65C3 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 230W Case: TO263 Mounting: SMD Kind of package: tube Gate charge: 30nC Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Collector current: 20A Pulsed collector current: 105A Turn-on time: 51ns Turn-off time: 132ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N65C3-TRL | IXYS | Description: IXYA20N65C3 TRL Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 19ns/80ns Switching Energy: 430µJ (on), 350µJ (off) Test Condition: 400V, 20A, 20Ohm, 15V Gate Charge: 30 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 105 A Power - Max: 230 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N65C3-TRL | Littelfuse | Trans IGBT Chip N-CH 650V 50A 230W 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N65C3-TRL | IXYS | IGBTs IXYA20N65C3 TRL | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N65C3D1 | Littelfuse | Trans IGBT Chip N-CH 650V 50A 200000mW 3-Pin(2+Tab) TO-263AA | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N65C3D1 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 200W Case: TO263 Mounting: SMD Kind of package: tube Gate charge: 30nC Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Collector current: 20A Pulsed collector current: 105A Turn-on time: 51ns Turn-off time: 132ns | auf Bestellung 176 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYA20N65C3D1 | IXYS | IGBTs Disc IGBT XPT-GenX3 TO-263D2 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA20N65C3D1 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 200W Case: TO263 Mounting: SMD Kind of package: tube Gate charge: 30nC Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Collector current: 20A Pulsed collector current: 105A Turn-on time: 51ns Turn-off time: 132ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 176 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYA20N65C3D1 | IXYS | Description: IGBT 650V 50A TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-263AA Td (on/off) @ 25°C: 19ns/80ns Switching Energy: 430µJ (on), 650µJ (off) Test Condition: 400V, 20A, 20Ohm, 15V Gate Charge: 30 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 105 A Power - Max: 200 W | auf Bestellung 183 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYA20N65C3D1TRL | Littelfuse | IXYA20N65C3D1TRL | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA30N120A3HV | IXYS | IGBTs TO263 1200V 30A IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA30N120A3HV | IXYS | Description: IGBT DISCRETE TO-263HV Packaging: Tube Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA30N120A4HV | IXYS | Description: DISC IGBT XPT-GENX4 TO-263D2 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A Supplier Device Package: TO-263HV IGBT Type: PT Td (on/off) @ 25°C: 15ns/235ns Switching Energy: 4mJ (on), 3.4mJ (off) Test Condition: 960V, 25A, 5Ohm, 15V Gate Charge: 57 nC Part Status: Active Current - Collector (Ic) (Max): 106 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 184 A Power - Max: 500 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA30N120A4HV | Littelfuse | 1200V IGBT Chip Transistor | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA30N120A4HV | Littelfuse | 1200V IGBT Chip Transistor | auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYA30N120A4HV | IXYS | IGBTs TO263 1200V 30A XPT | auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYA30N120A4HV-TRL | Littelfuse | IXYA30N120A4HV-TRL | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA48N65A5 | IXYS | Description: 650V, 48A, XP Gen5 A5 IGBT in TO Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/205ns Switching Energy: 400µJ (on), 1.25mJ (off) Test Condition: 400V, 30A, 5Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 236 A Power - Max: 326 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA48N65A5 | IXYS | IGBTs 650V, 48A, XPT Gen5 A5 IGBT in TO-263 | auf Bestellung 90 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYA50N65C3 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO263-2 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: SMD Gate charge: 86nC Kind of package: tube Technology: GenX3™; Planar; XPT™ Turn-on time: 56ns Turn-off time: 145ns | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA50N65C3 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO263-2 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: SMD Gate charge: 86nC Kind of package: tube Technology: GenX3™; Planar; XPT™ Turn-on time: 56ns Turn-off time: 145ns Anzahl je Verpackung: 300 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA50N65C3 | IXYS | Description: IGBT 650V 130A 600W TO263 | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
| IXYA50N65C3 | IXYS | IGBT Transistors 650V/130A XPT C3-Class TO-263 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA50N65C3 | Littelfuse | Trans IGBT Chip N-CH 650V 132A 600000mW 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA50N65C3-TRL | IXYS | Discrete Semiconductor Modules IXYA50N65C3 TRL | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA50N65C3-TRL | IXYS | Description: IXYA50N65C3 TRL Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 36 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 20ns/90ns Switching Energy: 800µJ (on), 470µJ (off) Test Condition: 400V, 36A, 5Ohm, 15V Gate Charge: 86 nC Current - Collector (Ic) (Max): 132 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 250 A Power - Max: 600 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA50N65C5 | IXYS | IGBTs 650V, 50A, XPT Gen5 C5 IGBT in TO-263 | auf Bestellung 85 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYA55N65B5 | IXYS | IGBTs 650V, 55A, XPT Gen5 B5 IGBT in TO-263 | auf Bestellung 80 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYA60N65A5 | IXYS | Description: 650V, 60A, XP Gen5 A5 IGBT in TO Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 28ns/230ns Switching Energy: 600µJ (on), 1.45mJ (off) Test Condition: 400V, 36A, 5Ohm, 15V Gate Charge: 128 nC Current - Collector (Ic) (Max): 134 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 260 A Power - Max: 395 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA60N65A5 | IXYS | IGBTs 650V, 60A, XPT Gen5 A5 IGBT in TO-263 | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYA8N250CHV | IXYS | Description: IGBT 2500V 29A TO263HV Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 5 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A Supplier Device Package: TO-263HV Td (on/off) @ 25°C: 11ns/180ns Switching Energy: 2.6mJ (on), 1.07mJ (off) Test Condition: 1250V, 8A, 15Ohm, 15V Gate Charge: 45 nC Part Status: Active Current - Collector (Ic) (Max): 29 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 70 A Power - Max: 280 W | auf Bestellung 1026 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYA8N250CHV | IXYS | IGBTs TO263 2500V 8A XPT | auf Bestellung 296 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYA8N250CHV | IXYS | IXYA8N250CHV SMD IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA8N90C3D1 | IXYS | IGBTs 900V 8A 2.5V XPT IGBTs GenX3 w/ Diode | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA8N90C3D1 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 125W Case: TO263 Mounting: SMD Gate charge: 13.3nC Kind of package: tube Collector-emitter voltage: 900V Collector current: 8A Pulsed collector current: 48A Turn-on time: 39ns Turn-off time: 238ns Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA8N90C3D1 | Littelfuse | Trans IGBT Chip N-CH 900V 20A 125000mW 3-Pin(2+Tab) TO-263AA | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA8N90C3D1 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 125W Case: TO263 Mounting: SMD Gate charge: 13.3nC Kind of package: tube Collector-emitter voltage: 900V Collector current: 8A Pulsed collector current: 48A Turn-on time: 39ns Turn-off time: 238ns Gate-emitter voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYA8N90C3D1 | IXYS | Description: IGBT 900V 20A 125W C3 TO-263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 114 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A Supplier Device Package: TO-263AA Td (on/off) @ 25°C: 16ns/40ns Switching Energy: 460µJ (on), 180µJ (off) Test Condition: 450V, 8A, 30Ohm, 15V Gate Charge: 13.3 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 48 A Power - Max: 125 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYB82N120C3H1 | Littelfuse | Trans IGBT Chip N-CH 1200V 164A 1040W 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYB82N120C3H1 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXYB82N120C3H1 - IGBT, 164 A, 2.75 V, 1.04 kW, 1.2 kV, TO-264AA, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.75V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 1.04kW Bauform - Transistor: TO-264AA Anzahl der Pins: 3Pin(s) Produktpalette: XPT GenX3 Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 164A SVHC: Lead (17-Jan-2023) | auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYB82N120C3H1 | IXYS | Description: IGBT 1200V 164A 1040W PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 420 ns Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A Supplier Device Package: PLUS264™ Td (on/off) @ 25°C: 29ns/192ns Switching Energy: 4.95mJ (on), 2.78mJ (off) Test Condition: 600V, 80A, 2Ohm, 15V Gate Charge: 215 nC Part Status: Active Current - Collector (Ic) (Max): 164 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 320 A Power - Max: 1040 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYB82N120C3H1 | IXYS | IGBTs XPT IGBT C3-Class 1200V/160A; Copack | auf Bestellung 300 Stücke: Lieferzeit 409-413 Tag (e) |
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| IXYB82N120C3H1 | IXYS | IXYB82N120C3H1 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYF30N450 | IXYS | IGBT Transistors IGBT XPT-HI VOLTAGE | auf Bestellung 46 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYF30N450 | IXYS | IXYF30N450 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYF30N450 | IXYS | Description: IGBT 4500V 23A 230W ISOPLUS Packaging: Tube Package / Case: ISOPLUSi5-Pak™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A Supplier Device Package: ISOPLUS i4-PAC™ Td (on/off) @ 25°C: 38ns/168ns Test Condition: 960V, 30A, 15Ohm, 15V Gate Charge: 88 nC Part Status: Active Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 4500 V Current - Collector Pulsed (Icm): 190 A Power - Max: 230 W | auf Bestellung 104 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYF40N450 | Ixys Corporation | High Voltage XPTTM IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYF40N450 | Littelfuse Inc. | Description: IGBT 4500V 32A ISOPLUS I4PAK Packaging: Tube Package / Case: i4-Pac™-4, Isolated Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A Supplier Device Package: ISOPLUS i4-PAC™ Td (on/off) @ 25°C: 36ns/110ns Test Condition: 960V, 40A, 2Ohm, 15V Gate Charge: 170 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 4500 V Current - Collector Pulsed (Icm): 350 A Power - Max: 290 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYF40N450 | Littelfuse | High Voltage XPTTM IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYF40N450 | IXYS | IGBT Transistors IGBT DISCRETE | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH100N65A3 | IXYS | Description: IGBT Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 64 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 24ns/174ns Switching Energy: 3.15mJ (on), 2.2mJ (off) Test Condition: 400V, 50A, 2Ohm, 15V Gate Charge: 178 nC Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 480 A Power - Max: 470 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH100N65A3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 100A; 470W; TO247-3 Type of transistor: IGBT Power dissipation: 470W Case: TO247-3 Mounting: THT Gate charge: 178nC Kind of package: tube Collector current: 100A Pulsed collector current: 480A Turn-on time: 87ns Turn-off time: 459ns Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH100N65A3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 100A; 470W; TO247-3 Type of transistor: IGBT Power dissipation: 470W Case: TO247-3 Mounting: THT Gate charge: 178nC Kind of package: tube Collector current: 100A Pulsed collector current: 480A Turn-on time: 87ns Turn-off time: 459ns Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Gate-emitter voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH100N65A3 | IXYS | IGBTs TO247 650V 100A GENX3 | Produkt ist nicht verfügbar | |||||||||||||||
| IXyH100N65C3 | IXYS | IGBTs 650V/200A XPT C3-Class TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH100N65C3 | Littelfuse | Trans IGBT Chip N-CH 650V 200A 830W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH100N65C3 | Littelfuse | Trans IGBT Chip N-CH 650V 200A 830000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXyH100N65C3 | IXYS | Description: IGBT PT 650V 200A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 28ns/106ns Switching Energy: 2.15mJ (on), 840µJ (off) Test Condition: 400V, 50A, 3Ohm, 15V Gate Charge: 164 nC Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 420 A Power - Max: 830 W | auf Bestellung 1364 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXyH100N65C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3 Type of transistor: IGBT Power dissipation: 830W Case: TO247-3 Mounting: THT Gate charge: 172nC Kind of package: tube Collector current: 100A Pulsed collector current: 420A Turn-on time: 62ns Turn-off time: 200ns Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXyH100N65C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3 Type of transistor: IGBT Power dissipation: 830W Case: TO247-3 Mounting: THT Gate charge: 172nC Kind of package: tube Collector current: 100A Pulsed collector current: 420A Turn-on time: 62ns Turn-off time: 200ns Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Gate-emitter voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH100N65C5 | IXYS | Description: 650V, 100A, XPT Gen5 C5 IGBT in Packaging: Bulk | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH100N65C5 | IXYS | IGBTs 650V, 100A, XPT Gen5 C5 IGBT in TO-247AD | auf Bestellung 85 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH10N170C | IXYS | IGBT Transistors IGBT XPT-HI VOLTAGE | auf Bestellung 54 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH10N170C | IXYS | IXYH10N170C THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH10N170C | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH10N170C | IXYS | Description: IGBT 1700V 36A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 17 ns Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 14ns/130ns Switching Energy: 1.4mJ (on), 700µJ (off) Test Condition: 850V, 10A, 10Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 36 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 84 A Power - Max: 280 W | auf Bestellung 627 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH10N170CV1 | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH10N170CV1 | IXYS | Description: IGBT 1.7KV 36A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 160 ns Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 14ns/130ns Switching Energy: 1.4mJ (on), 700µJ (off) Test Condition: 850V, 10A, 10Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 36 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 84 A Power - Max: 280 W | auf Bestellung 4622 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH10N170CV1 | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH10N170CV1 | LITTELFUSE | Description: LITTELFUSE - IXYH10N170CV1 - TRANSISTOR, IGBT, 1.7KV, 36A, TO-247AD Kollektor-Emitter-Sättigungsspannung Vce(on): 3.6 Verlustleistung Pd: 280 Bauform - Transistor: TO-247AD Qualifizierungsstandard der Automobilindustrie: - Kollektor-Emitter-Spannung V(br)ceo: 1.7 Anzahl der Pins: 3 Produktpalette: XPT Series DC-Kollektorstrom: 36 Betriebstemperatur, max.: 175 SVHC: To Be Advised | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH10N170CV1 | IXYS | IGBTs 1700V/10A XPT IGBT w/ Diode | auf Bestellung 438 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH10N170CV1 | IXYS | IXYH10N170CV1 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH120N65A5 | IXYS | Description: IGBT 650V 120A X5 XPT TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 45ns/370ns Switching Energy: 1.25mJ (on), 3.2mJ (off) Test Condition: 400V, 60A, 3Ohm, 15V Gate Charge: 314 nC Part Status: Active Current - Collector (Ic) (Max): 290 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 790 A Power - Max: 830 W | auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH120N65A5 | Littelfuse | Extreme Light Punch Through IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH120N65A5 | LITTELFUSE | Description: LITTELFUSE - IXYH120N65A5 - IGBT, 290 A, 1.22 V, 830 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.22V usEccn: EAR99 euEccn: NLR Verlustleistung: 830W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pins Produktpalette: XPT GenX5 Series Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 290A SVHC: No SVHC (17-Jan-2022) | auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYH120N65A5 | IXYS | IGBTs XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO247 | auf Bestellung 309 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH120N65B3 | IXYS | IGBTs TO247 650V 120A GENX3 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH120N65B3 | IXYS | Description: DISC IGBT XPT-GENX3 TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 28 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A Supplier Device Package: TO-247 (IXYH) IGBT Type: PT Td (on/off) @ 25°C: 30ns/168ns Switching Energy: 1.34mJ (on), 1.5mJ (off) Test Condition: 400V, 50A, 2Ohm, 15V Gate Charge: 250 nC Part Status: Active Current - Collector (Ic) (Max): 340 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 760 A Power - Max: 1360 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH120N65C3 | IXYS | Description: DISC IGBT XPT-GENX3 TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 29 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A Supplier Device Package: TO-247 (IXYH) IGBT Type: PT Td (on/off) @ 25°C: 28ns/127ns Switching Energy: 1.25mJ (on), 500µJ (off) Test Condition: 400V, 50A, 2Ohm, 15V Gate Charge: 265 nC Part Status: Active Current - Collector (Ic) (Max): 260 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 620 A Power - Max: 1360 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH120N65C3 | IXYS | IGBTs TO247 650V 120A GENX3 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH12N250C | IXYS | IXYH12N250C THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH12N250C | IXYS | Description: IGBT 2500V 28A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 16 ns Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 12ns/167ns Switching Energy: 3.56mJ (on), 1.7mJ (off) Test Condition: 1250V, 12A, 10Ohm, 15V Gate Charge: 56 nC Part Status: Active Current - Collector (Ic) (Max): 28 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 80 A Power - Max: 310 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH12N250CV1HV | IXYS | IXYH12N250CV1HV THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH12N250CV1HV | IXYS | IGBT Modules IGBT XPT-HI VOLTAGE | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH12N250CV1HV | IXYS | Description: IGBT 2500V 28A TO247HV Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 16 ns Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 12ns/167ns Switching Energy: 3.56mJ (on), 1.7mJ (off) Test Condition: 1250V, 12A, 10Ohm, 15V Gate Charge: 56 nC Part Status: Active Current - Collector (Ic) (Max): 28 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 80 A Power - Max: 310 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH16N170C | IXYS | Description: IGBT 1.7KV 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 19 ns Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 16A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 11ns/140ns Switching Energy: 2.1mJ (on), 1.5mJ (off) Test Condition: 850V, 16A, 10Ohm, 15V Gate Charge: 56 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 100 A Power - Max: 310 W | auf Bestellung 1219 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH16N170C | IXYS | IXYH16N170C THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH16N170C | IXYS | IGBT Transistors IGBT XPT-HI VOLTAGE | auf Bestellung 63 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH16N170CV1 | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH16N170CV1 | IXYS | IXYH16N170CV1 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH16N170CV1 | IXYS | IGBT Transistors IGBT XPT-HI VOLTAGE | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH16N170CV1 | IXYS | Description: IGBT 1.7KV 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 150 ns Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 16A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 11ns/140ns Switching Energy: 2.1mJ (on), 1.5mJ (off) Test Condition: 850V, 16A, 10Ohm, 15V Gate Charge: 56 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 100 A Power - Max: 310 W | auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH16N170CV1 | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH16N250C | IXYS | Description: IGBT 2500V 35A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 19 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 14ns/260ns Switching Energy: 4.75mJ (on), 3.9mJ (off) Test Condition: 1250V, 16A, 10Ohm, 15V Gate Charge: 97 nC Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 126 A Power - Max: 500 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH16N250C | IXYS | IXYH16N250C THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH16N250CV1HV | IXYS | IGBT Transistors IGBT XPT-HI VOLTAGE | auf Bestellung 77 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH16N250CV1HV | IXYS | IXYH16N250CV1HV THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH16N250CV1HV | IXYS | Description: IGBT 2500V 35A TO247HV Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 19 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 14ns/260ns Switching Energy: 4.75mJ (on), 3.9mJ (off) Test Condition: 1250V, 16A, 10Ohm, 15V Gate Charge: 97 nC Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 126 A Power - Max: 500 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH1982 | Littelfuse | IXYH1982^IXYS | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH20N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 40A 278W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH20N120C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 278W Case: TO247-3 Mounting: THT Gate charge: 53nC Kind of package: tube Collector current: 20A Pulsed collector current: 96A Turn-on time: 60ns Turn-off time: 0.22µs Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Anzahl je Verpackung: 300 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH20N120C3 | IXYS | Description: IGBT 1200V 40A 278W TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 20ns/90ns Switching Energy: 1.3mJ (on), 500µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 53 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 96 A Power - Max: 278 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH20N120C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 278W Case: TO247-3 Mounting: THT Gate charge: 53nC Kind of package: tube Collector current: 20A Pulsed collector current: 96A Turn-on time: 60ns Turn-off time: 0.22µs Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH20N120C3 | IXYS | IGBTs GenX3 1200V XPT IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH20N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 40A 278000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH20N120C3D1 | IXYS | Description: IGBT 1200V 36A 230W TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 20ns/90ns Switching Energy: 1.3mJ (on), 500µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 53 nC Part Status: Active Current - Collector (Ic) (Max): 36 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 88 A Power - Max: 230 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH20N120C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX3™; XPT™ Power dissipation: 230W Case: TO247-3 Mounting: THT Gate charge: 53nC Kind of package: tube Collector current: 20A Pulsed collector current: 88A Turn-on time: 60ns Turn-off time: 0.22µs Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V | auf Bestellung 283 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYH20N120C3D1 | IXYS | IGBTs XPT 1200V IGBT GenX3 XPT IGBT | auf Bestellung 79 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH20N120C3D1 | Littelfuse | Trans IGBT Chip N-CH 1200V 36A 230000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH20N120C3D1 | Littelfuse | Trans IGBT Chip N-CH 1200V 36A 230W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH20N120C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX3™; XPT™ Power dissipation: 230W Case: TO247-3 Mounting: THT Gate charge: 53nC Kind of package: tube Collector current: 20A Pulsed collector current: 88A Turn-on time: 60ns Turn-off time: 0.22µs Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | auf Bestellung 283 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYH20N120C3D1 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXYH20N120C3D1 - IGBT, 36 A, 4 V, 230 W, 1.2 kV, TO-247AD, 3 Pin(s) MSL: MSL 1 - unbegrenzt Kollektor-Emitter-Sättigungsspannung Vce(on): 4 Verlustleistung Pd: 230 Bauform - Transistor: TO-247AD Kollektor-Emitter-Spannung V(br)ceo: 1.2 Anzahl der Pins: 3 Produktpalette: XPT GenX3 DC-Kollektorstrom: 36 Betriebstemperatur, max.: 150 SVHC: No SVHC (07-Jul-2017) | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH20N120C4 | IXYS | Description: IGBT DISCRETE TO-247 Packaging: Tube | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH20N120C4 | IXYS | IGBTs TO247 1200V 17A IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH20N65B3 | IXYS | Description: DISC IGBT XPT-GENX3 TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 12ns/103ns Switching Energy: 500µJ (on), 450µJ (off) Test Condition: 400V, 20A, 20Ohm, 15V Gate Charge: 29 nC Part Status: Active Current - Collector (Ic) (Max): 58 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 108 A Power - Max: 230 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH20N65B3 | IXYS | IGBTs TO263 650V 20A XPT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH20N65C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 230W Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 30nC Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Collector current: 20A Pulsed collector current: 105A Turn-on time: 51ns Turn-off time: 132ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH20N65C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 230W Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 30nC Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Collector current: 20A Pulsed collector current: 105A Turn-on time: 51ns Turn-off time: 132ns | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH20N65C3 | IXYS | Description: IGBT 650V 50A 230W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 19ns/80ns Switching Energy: 430µJ (on), 350µJ (off) Test Condition: 400V, 20A, 20Ohm, 15V Gate Charge: 30 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 105 A Power - Max: 230 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH20N65C3 | Littelfuse | Trans IGBT Chip N-CH 650V 50A 230000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH20N65C3 | IXYS | IGBTs TO263 650V 20A XPT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH20N65C3D1 | IXYS | Description: DISC IGBT XPT-GENX4 TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-247 (IXYH) IGBT Type: PT Td (on/off) @ 25°C: 19ns/80ns Switching Energy: 430µJ (on), 350µJ (off) Test Condition: 400V, 20A, 20Ohm, 15V Gate Charge: 30 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 105 A Power - Max: 230 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH20N65C3D1 | IXYS | IGBTs Disc IGBT XPT-GenX4 TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH24N170C | IXYS | IGBT Transistors 1700V/58A High Volt | auf Bestellung 76 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH24N170C | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH24N170C | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH24N170C | Ixys Corporation | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYH24N170C | IXYS | IXYH24N170C THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH24N170C | IXYS | Description: IGBT 1.7KV 58A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 20A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 12ns/160ns Switching Energy: 4.9mJ (on), 1.95mJ (off) Test Condition: 960V, 30A, 15Ohm, 15V Gate Charge: 96 nC Part Status: Active Current - Collector (Ic) (Max): 58 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 145 A Power - Max: 500 W | auf Bestellung 859 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH24N170CV1 | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH24N170CV1 | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH24N170CV1 | IXYS | IXYH24N170CV1 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH24N170CV1 | IXYS | Description: IGBT 1.7KV 58A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 170 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 24A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 16ns/155ns Switching Energy: 3.6mJ (on), 1.76mJ (off) Test Condition: 850V, 24A, 5Ohm, 15V Gate Charge: 96 nC Part Status: Active Current - Collector (Ic) (Max): 58 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 140 A Power - Max: 500 W | auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH24N170CV1 | IXYS | IGBT Transistors IGBT XPT-HI VOLTAGE | auf Bestellung 296 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH24N90C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 24A; 240W; TO247-3 Type of transistor: IGBT Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 900V Gate-emitter voltage: ±20V Collector current: 24A Pulsed collector current: 110A Turn-on time: 60ns Turn-off time: 215ns Power dissipation: 240W Gate charge: 40nC Technology: GenX3™; Planar; XPT™ Anzahl je Verpackung: 300 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH24N90C3 | IXYS | Description: IGBT 900V 46A 240W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 20ns/73ns Switching Energy: 1.35mJ (on), 400µJ (off) Test Condition: 450V, 24A, 10Ohm, 15V Gate Charge: 40 nC Part Status: Active Current - Collector (Ic) (Max): 46 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 110 A Power - Max: 240 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH24N90C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 24A; 240W; TO247-3 Type of transistor: IGBT Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 900V Gate-emitter voltage: ±20V Collector current: 24A Pulsed collector current: 110A Turn-on time: 60ns Turn-off time: 215ns Power dissipation: 240W Gate charge: 40nC Technology: GenX3™; Planar; XPT™ | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH24N90C3 | IXYS | IGBTs GenX3 900V XPT IGBTs | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH24N90C3 | Littelfuse | Trans IGBT Chip N-CH 900V 46A 240000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH24N90C3D1 | Littelfuse | Trans IGBT Chip N-CH 900V 44A 200000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH24N90C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 24A; 200W; TO247-3 Type of transistor: IGBT Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 900V Gate-emitter voltage: ±20V Collector current: 24A Pulsed collector current: 105A Turn-on time: 60ns Turn-off time: 215ns Power dissipation: 200W Gate charge: 40nC Technology: GenX3™; Planar; XPT™ Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH24N90C3D1 | IXYS | Description: IGBT 900V 44A 200W C3 TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 340 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 20ns/73ns Switching Energy: 1.35mJ (on), 400µJ (off) Test Condition: 450V, 24A, 10Ohm, 15V Gate Charge: 40 nC Part Status: Active Current - Collector (Ic) (Max): 44 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 105 A Power - Max: 200 W | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
| IXYH24N90C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 24A; 200W; TO247-3 Type of transistor: IGBT Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 900V Gate-emitter voltage: ±20V Collector current: 24A Pulsed collector current: 105A Turn-on time: 60ns Turn-off time: 215ns Power dissipation: 200W Gate charge: 40nC Technology: GenX3™; Planar; XPT™ | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH24N90C3D1 | IXYS | IGBTs 900V 24A 2.7V XPT IGBTs GenX3 w/ Diode | auf Bestellung 281 Stücke: Lieferzeit 318-322 Tag (e) |
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| IXYH25N250CHV | Littelfuse | Trans IGBT Chip N-CH 2500V 95A 937W 3-Pin(3+Tab) TO-247HV | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH25N250CHV | IXYS | IXYH25N250CHV THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH25N250CHV | IXYS | Description: IGBT 2500V 235A TO-247HV Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 15ns/230ns Switching Energy: 8.3mJ (on), 7.3mJ (off) Test Condition: 1250V, 25A, 5Ohm, 15V Gate Charge: 147 nC Part Status: Active Current - Collector (Ic) (Max): 95 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 235 A Power - Max: 937 W | auf Bestellung 55 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH25N250CHV | LITTELFUSE | Description: LITTELFUSE - IXYH25N250CHV - TRANSISTOR, IGBT, 2.5KV, 95A, TO-247HV Kollektor-Emitter-Sättigungsspannung Vce(on): 3.4 Verlustleistung Pd: 937 Bauform - Transistor: TO-247HV Qualifizierungsstandard der Automobilindustrie: - Kollektor-Emitter-Spannung V(br)ceo: 2.5 Anzahl der Pins: 3 Produktpalette: XPT Series DC-Kollektorstrom: 95 Betriebstemperatur, max.: 175 SVHC: To Be Advised | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH25N250CHV | IXYS | IGBTs 2500V/95A , HV XPT IGBT | auf Bestellung 277 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH25N250CHV | Littelfuse | Trans IGBT Chip N-CH 2500V 95A 937000mW 3-Pin(3+Tab) TO-247HV | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N120A4 | IXYS | IGBTs TO263 1200V 30A XPT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N120A4 | IXYS | Description: DISC IGBT XPT-GENX4 TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A Supplier Device Package: TO-247 (IXYH) IGBT Type: PT Td (on/off) @ 25°C: 15ns/235ns Switching Energy: 4mJ (on), 3.4mJ (off) Test Condition: 960V, 25A, 5Ohm, 15V Gate Charge: 57 nC Part Status: Active Current - Collector (Ic) (Max): 106 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 184 A Power - Max: 500 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N120B4 | IXYS | Description: DISC IGBT XPT-GENX4 TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-247 (IXYH) IGBT Type: PT Td (on/off) @ 25°C: 20ns/245ns Switching Energy: 4.4mJ (on), 2.6mJ (off) Test Condition: 960V, 25A, 5Ohm, 15V Gate Charge: 58 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 174 A Power - Max: 500 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N120B4 | IXYS | IGBTs TO247 1200V 30A XPT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N120C3 | IXYS | Description: IGBT 1200V 75A 500W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 19ns/130ns Switching Energy: 2.6mJ (on), 1.1mJ (off) Test Condition: 600V, 30A, 10Ohm, 15V Gate Charge: 69 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 145 A Power - Max: 500 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N120C3 | IXYS | IGBTs 1200V XPT GenX3 IGBT | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH30N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 75A 500000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N120C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3 Type of transistor: IGBT Technology: GenX3™; XPT™ Power dissipation: 500W Case: TO247-3 Mounting: THT Gate charge: 69nC Kind of package: tube Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 145A Turn-on time: 71ns Turn-off time: 296ns | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N120C3 Produktcode: 181016 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||
| IXYH30N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 75A 500W 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N120C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3 Type of transistor: IGBT Technology: GenX3™; XPT™ Power dissipation: 500W Case: TO247-3 Mounting: THT Gate charge: 69nC Kind of package: tube Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 145A Turn-on time: 71ns Turn-off time: 296ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N120C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 416W Case: TO247-3 Mounting: THT Gate charge: 69nC Kind of package: tube Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 133A Turn-on time: 71ns Turn-off time: 296ns | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N120C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 416W Case: TO247-3 Mounting: THT Gate charge: 69nC Kind of package: tube Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 133A Turn-on time: 71ns Turn-off time: 296ns Anzahl je Verpackung: 300 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N120C3D1 | IXYS | Description: IGBT 1200V 66A 416W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 19ns/130ns Switching Energy: 2.6mJ (on), 1.1mJ (off) Test Condition: 600V, 30A, 10Ohm, 15V Gate Charge: 69 nC Part Status: Active Current - Collector (Ic) (Max): 66 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 133 A Power - Max: 416 W | auf Bestellung 503 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH30N120C3D1 | IXYS | IGBTs XPT 1200V IGBT GenX4 XPT IGBT | auf Bestellung 192 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH30N120C3D1 | Littelfuse | Trans IGBT Chip N-CH 1200V 66A 416000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N120C4 | IXYS | Description: DISC IGBT XPT-GENX4 TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Supplier Device Package: TO-247 (IXYH) IGBT Type: PT Td (on/off) @ 25°C: 18ns/205ns Switching Energy: 4.8mJ (on), 1.5mJ (off) Test Condition: 960V, 25A, 5Ohm, 15V Gate Charge: 57 nC Part Status: Active Current - Collector (Ic) (Max): 94 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 166 A Power - Max: 500 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N120C4 | IXYS | IGBTs TO247 1200V 30A XPT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N120C4 | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N120C4H1 | IXYS | IGBTs IXYH30N120C4H1 | auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH30N120C4H1 | IXYS | Description: IGBT TRENCH 1200V 94A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 310 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Supplier Device Package: TO-247 (IXTH) IGBT Type: Trench Td (on/off) @ 25°C: 18ns/205ns Switching Energy: 4.8mJ (on), 1.5mJ (off) Test Condition: 960V, 25A, 5Ohm, 15V Gate Charge: 57 nC Current - Collector (Ic) (Max): 94 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 166 A Power - Max: 500 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N170C | IXYS | IXYH30N170C THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N170C | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N170C | Littelfuse | Trans IGBT Chip N-CH 1700V 100A 937W 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N170C | IXYS | Description: 1700V/108A HIGH VOLTAGE XPT IGB Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 28ns/150ns Switching Energy: 5.9mJ (on), 3.3mJ (off) Test Condition: 850V, 30A, 10Ohm, 15V Gate Charge: 140 nC Part Status: Active Current - Collector (Ic) (Max): 108 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 255 A Power - Max: 937 W | auf Bestellung 390 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH30N170C | IXYS | IGBT Transistors 1700V/108A High Voltage XPT IGBT | auf Bestellung 234 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH30N450HV | IXYS | Description: IGBT 4500V 30A TO-247HV Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A Supplier Device Package: TO-247HV IGBT Type: PT Test Condition: 960V, 30A, 10Ohm, 15V Gate Charge: 88 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 4500 V Current - Collector Pulsed (Icm): 200 A Power - Max: 430 W | auf Bestellung 958 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH30N450HV | LITTELFUSE | Description: LITTELFUSE - IXYH30N450HV - IGBT, 60 A, 3.2 V, 430 W, 4.5 kV, TO-247HV, 3 Pin(s) MSL: - Kollektor-Emitter-Sättigungsspannung Vce(on): 3.2 Verlustleistung Pd: 430 Bauform - Transistor: TO-247HV Qualifizierungsstandard der Automobilindustrie: - Kollektor-Emitter-Spannung V(br)ceo: 4.5 Anzahl der Pins: 3 Produktpalette: - DC-Kollektorstrom: 60 Betriebstemperatur, max.: 150 SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N450HV | IXYS | IGBT Transistors IGBT XPT-HI VOLTAGE | auf Bestellung 444 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH30N450HV | IXYS | IXYH30N450HV THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N450HV | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N450HV | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N65B3D1 | IXYS | Description: DISC IGBT XPT-GENX3 TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 38 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-247 (IXYH) IGBT Type: PT Td (on/off) @ 25°C: 17ns/87ns Switching Energy: 830µJ (on), 640µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 45 nC Part Status: Active Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 270 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N65B3D1 | IXYS | IGBTs Disc IGBT XPT-GenX3 TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N65C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 270W Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 118A Turn-on time: 59ns Turn-off time: 0.12µs Gate charge: 44nC Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N65C3 | IXYS | Description: IGBT 650V 60A 270W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 21ns/75ns Switching Energy: 1mJ (on), 270µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N65C3 | IXYS | IGBTs TO247 650V 30A GENX3 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N65C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 270W Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 118A Turn-on time: 59ns Turn-off time: 0.12µs Gate charge: 44nC | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N65C3H1 | IXYS | IGBTs 650V/60A XPT C3 Copacked TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N65C3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; Sonic FRD™; XPT™ Power dissipation: 270W Case: TO247-3 Mounting: THT Gate charge: 44nC Kind of package: tube Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Turn-on time: 59ns Turn-off time: 0.12µs Pulsed collector current: 118A Collector current: 30A | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N65C3H1 | Littelfuse | Trans IGBT Chip N-CH 650V 60A 270000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N65C3H1 | Littelfuse | Trans IGBT Chip N-CH 650V 60A 270W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N65C3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; Sonic FRD™; XPT™ Power dissipation: 270W Case: TO247-3 Mounting: THT Gate charge: 44nC Kind of package: tube Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Turn-on time: 59ns Turn-off time: 0.12µs Pulsed collector current: 118A Collector current: 30A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N65C3H1 | IXYS | Description: IGBT 650V 60A 270W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 21ns/75ns Switching Energy: 1mJ (on), 270µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH30N65C3H1 | Littelfuse | Trans IGBT Chip N-CH 650V 60A 270000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N120A4 | IXYS | Description: IGBT 1200V 40A GENX4 XPT TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A Supplier Device Package: TO-247 (IXYH) IGBT Type: PT Td (on/off) @ 25°C: 22ns/204ns Switching Energy: 2.3mJ (on), 3.75mJ (off) Test Condition: 600V, 32A, 5Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 275 A Power - Max: 600 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N120A4 | IXYS | IGBTs TO247 1200V 40A IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N120B3 | IXYS | Description: IGBT 1200V 96A 577W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 22ns/177ns Switching Energy: 2.7mJ (on), 1.6mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 87 nC Current - Collector (Ic) (Max): 96 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 577 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N120B3 | IXYS | IGBTs TO247 1200V 40A GENX3 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N120B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 200A Turn-on time: 84ns Turn-off time: 411ns Power dissipation: 577W Gate charge: 87nC Technology: GenX3™; Planar; XPT™ Case: TO247-3 Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N120B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 200A Turn-on time: 84ns Turn-off time: 411ns Power dissipation: 577W Gate charge: 87nC Technology: GenX3™; Planar; XPT™ Case: TO247-3 Collector-emitter voltage: 1.2kV | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N120B3D1 | Littelfuse | Trans IGBT Chip N-CH 1200V 86A 480W 3-Pin(3+Tab) TO-247AD | auf Bestellung 20634 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYH40N120B3D1 | Littelfuse | Trans IGBT Chip N-CH 1200V 86A 480W 3-Pin(3+Tab) TO-247AD | auf Bestellung 20634 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYH40N120B3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 180A Turn-on time: 84ns Turn-off time: 411ns Power dissipation: 480W Gate charge: 87nC Technology: GenX3™; Planar; XPT™ Case: TO247-3 Collector-emitter voltage: 1.2kV | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N120B3D1 | Littelfuse | Trans IGBT Chip N-CH 1200V 86A 480000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N120B3D1 | Littelfuse | Trans IGBT Chip N-CH 1200V 86A 480W 3-Pin(3+Tab) TO-247AD | auf Bestellung 270 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYH40N120B3D1 | IXYS | Description: IGBT 1200V 86A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 22ns/177ns Switching Energy: 2.7mJ (on), 1.6mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 87 nC Part Status: Active Current - Collector (Ic) (Max): 86 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 180 A Power - Max: 480 W | auf Bestellung 580 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH40N120B3D1 | IXYS | IGBTs TO247 1200V 40A GENX3 | auf Bestellung 290 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH40N120B3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 180A Turn-on time: 84ns Turn-off time: 411ns Power dissipation: 480W Gate charge: 87nC Technology: GenX3™; Planar; XPT™ Case: TO247-3 Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N120B4 | IXYS | Description: IGBT DISCRETE TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N120B4 | IXYS | IGBT Transistors IGBT DISCRETE | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N120B4H1 | Littelfuse | IGBT Transistors IXYH40N120B4H1 | auf Bestellung 390 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH40N120B4H1 | IXYS | IGBTs IXYH40N120B4H1 | auf Bestellung 359 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH40N120B4H1 | IXYS | Description: IGBT TRENCH 1200V 112A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 430 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A Supplier Device Package: TO-247 (IXTH) IGBT Type: Trench Td (on/off) @ 25°C: 19ns/220ns Switching Energy: 5.9mJ (on), 2.9mJ (off) Test Condition: 960V, 32A, 5Ohm, 15V Gate Charge: 94 nC Current - Collector (Ic) (Max): 112 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 240 A Power - Max: 600 W | auf Bestellung 274 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH40N120C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 175A Turn-on time: 95ns Turn-off time: 303ns Power dissipation: 577W Gate charge: 80nC Technology: GenX3™; Planar; XPT™ Case: TO247-3 Collector-emitter voltage: 1.2kV | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 90A 577000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N120C3 | IXYS | IGBTs GenX3 1200V XPT IGBT | auf Bestellung 156 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH40N120C3 | IXYS | Description: IGBT 1200V 70A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 24ns/125ns Switching Energy: 3.9mJ (on), 660µJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 85 nC Part Status: Active Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 115 A Power - Max: 577 W | auf Bestellung 239 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH40N120C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 175A Turn-on time: 95ns Turn-off time: 303ns Power dissipation: 577W Gate charge: 80nC Technology: GenX3™; Planar; XPT™ Case: TO247-3 Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N120C3D1 | IXYS | Description: IGBT 1200V 64A 480W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 24ns/125ns Switching Energy: 3.9mJ (on), 660µJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 85 nC Part Status: Active Current - Collector (Ic) (Max): 64 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 105 A Power - Max: 480 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N120C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A Turn-on time: 95ns Turn-off time: 303ns Power dissipation: 480W Gate charge: 80nC Technology: GenX3™; Planar; XPT™ Case: TO247-3 Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N120C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A Turn-on time: 95ns Turn-off time: 303ns Power dissipation: 480W Gate charge: 80nC Technology: GenX3™; Planar; XPT™ Case: TO247-3 Collector-emitter voltage: 1.2kV | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N120C3D1 | Littelfuse | Trans IGBT Chip N-CH 1200V 80A 480000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N120C3D1 | IXYS | IGBTs XPT 1200V IGBT GenX5 XPT IGBT | auf Bestellung 300 Stücke: Lieferzeit 430-434 Tag (e) |
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| IXYH40N120C4 | IXYS | IGBTs TO247 1200V 40A IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N120C4 | IXYS | Description: IGBT DISCRETE TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 21ns/140ns Switching Energy: 5.55mJ (on), 1.55mJ (off) Test Condition: 960V, 32A, 5Ohm, 15V Gate Charge: 92 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 230 A Power - Max: 680 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N120C4H1 | Littelfuse | IGBT Transistors IXYH40N120C4H1 | auf Bestellung 72 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH40N120C4H1 | IXYS | Description: IGBT TRENCH 1200V 110A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 380 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A Supplier Device Package: TO-247 (IXYH) IGBT Type: Trench Td (on/off) @ 25°C: 21ns/140ns Switching Energy: 5.55mJ (on), 1.55mJ (off) Test Condition: 960V, 32A, 5Ohm, 15V Gate Charge: 92 nC Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 230 A Power - Max: 680 W | auf Bestellung 295 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH40N120C4H1 | IXYS | IGBTs IXYH40N120C4H1 | auf Bestellung 379 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH40N65B3D1 | IXYS | IGBTs TO247 650V 40A GENX3 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N65B3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 195A Mounting: THT Gate charge: 68nC Kind of package: tube Turn-on time: 57ns Turn-off time: 350ns Technology: GenX3™; Planar; XPT™ | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N65B3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 195A Mounting: THT Gate charge: 68nC Kind of package: tube Turn-on time: 57ns Turn-off time: 350ns Technology: GenX3™; Planar; XPT™ Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N65B3D1 | IXYS | Description: IGBT Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 20ns/140ns Switching Energy: 800µJ (on), 1.25mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 68 nC Current - Collector (Ic) (Max): 86 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 195 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N65C3 | IXYS | Description: IGBT 650V 80A 300W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 26ns/106ns Switching Energy: 860µJ (on), 400µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 70 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N65C3 | IXYS | IGBTs 650V/80A XPT C3-Class TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N65C3 | Ixys Corporation | Trans IGBT Chip N-CH 650V 80A 300W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N65C3D1 | IXYS | Description: IGBT PT 650V 80A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 120 ns Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 23ns/110ns Switching Energy: 830µJ (on), 360µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 66 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N65C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-on time: 64ns Turn-off time: 160ns Technology: GenX3™; Planar; XPT™ Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N65C3D1 | IXYS | IGBTs Disc IGBT XPT-GenX3 TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N65C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-on time: 64ns Turn-off time: 160ns Technology: GenX3™; Planar; XPT™ | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N65C3H1 | Littelfuse | Trans IGBT Chip N-CH 650V 80A 300000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N65C3H1 | Littelfuse | Trans IGBT Chip N-CH 650V 80A 300W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N65C3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 65ns Turn-off time: 206ns Technology: GenX3™; Planar; XPT™ | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N65C3H1 | IXYS | Description: IGBT 650V 80A 300W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Reverse Recovery Time (trr): 120 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Supplier Device Package: TO-247 (IXYH) IGBT Type: PT Td (on/off) @ 25°C: 26ns/106ns Switching Energy: 860µJ (on), 400µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 70 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N65C3H1 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXYH40N65C3H1 - IGBT, 40 A, 2.35 V, 300 W, 650 V, TO-247, 3 Pin(s) Kollektor-Emitter-Sättigungsspannung Vce(on): 2.35 DC-Kollektorstrom: 40 Anzahl der Pins: 3 Bauform - Transistor: TO-247 Kollektor-Emitter-Spannung V(br)ceo: 650 Verlustleistung Pd: 300 Betriebstemperatur, max.: 175 Produktpalette: - SVHC: No SVHC (12-Jan-2017) | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N65C3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 65ns Turn-off time: 206ns Technology: GenX3™; Planar; XPT™ Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N65C3H1 | IXYS | IGBTs 650V/80A XPT Copacked TO-247 | auf Bestellung 242 Stücke: Lieferzeit 332-336 Tag (e) |
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| IXYH40N90C3 | IXYS | Description: IGBT 900V 105A 600W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 27ns/78ns Switching Energy: 1.9mJ (on), 1mJ (off) Test Condition: 450V, 40A, 5Ohm, 15V Gate Charge: 74 nC Current - Collector (Ic) (Max): 105 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 200 A Power - Max: 600 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N90C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 600W Case: TO247-3 Mounting: THT Gate charge: 74nC Kind of package: tube Collector-emitter voltage: 900V Collector current: 40A Pulsed collector current: 200A Turn-on time: 81ns Turn-off time: 237ns Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N90C3 | IXYS | IGBTs GenX3 900V XPT IGBTs | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N90C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 600W Case: TO247-3 Mounting: THT Gate charge: 74nC Kind of package: tube Collector-emitter voltage: 900V Collector current: 40A Pulsed collector current: 200A Turn-on time: 81ns Turn-off time: 237ns Gate-emitter voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N90C3D1 | IXYS/Littelfuse | Транзистор IGBT; Uceb, В = 900; Ic = 90 А; Pmax, Вт = 500; Uce(on), В = 2,5; Тексп, °C = -55...+150; Тип монт. = вивідний; TO-247AD | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYH40N90C3D1 | IXYS | IGBTs XPT 900V IGBT GenX3 XPT IGBT | auf Bestellung 197 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH40N90C3D1 | LITTELFUSE | Description: LITTELFUSE - IXYH40N90C3D1 - IGBT, 90 A, 2.2 V, 500 W, 900 V, TO-247AD, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.2V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 500W Bauform - Transistor: TO-247AD Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 900V productTraceability: No Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 90A SVHC: Boric acid (14-Jun-2023) | auf Bestellung 932 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYH40N90C3D1 | Littelfuse | Trans IGBT Chip N-CH 900V 90A 500W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N90C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 500W Case: TO247-3 Mounting: THT Gate charge: 74nC Kind of package: tube Collector-emitter voltage: 900V Collector current: 40A Pulsed collector current: 180A Turn-on time: 81ns Turn-off time: 237ns Gate-emitter voltage: ±20V | auf Bestellung 216 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYH40N90C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 500W Case: TO247-3 Mounting: THT Gate charge: 74nC Kind of package: tube Collector-emitter voltage: 900V Collector current: 40A Pulsed collector current: 180A Turn-on time: 81ns Turn-off time: 237ns Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | auf Bestellung 216 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYH40N90C3D1 | IXYS | Description: IGBT 900V 90A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 27ns/78ns Switching Energy: 1.9mJ (on), 1mJ (off) Test Condition: 450V, 40A, 5Ohm, 15V Gate Charge: 74 nC Part Status: Active Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 180 A Power - Max: 500 W | auf Bestellung 376 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH40N90C3D1 | Littelfuse | Trans IGBT Chip N-CH 900V 90A 500000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N90C3D1 | Littelfuse | Trans IGBT Chip N-CH 900V 90A 500W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH40N90C3D1 транзистор Produktcode: 193543 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||
| IXYH50N120C3 | IXYS | IXYH50N120C3 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH50N120C3 | IXYS | Description: IGBT 1200V 100A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 50A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 28ns/133ns Switching Energy: 3mJ (on), 1mJ (off) Test Condition: 600V, 50A, 5Ohm, 15V Gate Charge: 142 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 240 A Power - Max: 750 W | auf Bestellung 298 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH50N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 100A 750000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH50N120C3 | IXYS | IGBTs XPT IGBT C3-Class 1200V/105A | auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH50N120C3D1 | Littelfuse | Trans IGBT Chip N-CH 1200V 90A 625000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH50N120C3D1 | Ixys Corporation | Trans IGBT Chip N-CH 1200V 90A 625W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH50N120C3D1 | IXYS | IGBTs XPT 1200V IGBT GenX6 XPT IGBT | auf Bestellung 539 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH50N120C3D1 | IXYS | IXYH50N120C3D1 THT IGBT transistors | auf Bestellung 293 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYH50N120C3D1 | IXYS | Description: IGBT 1200V 90A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 28ns/133ns Switching Energy: 3mJ (on), 1mJ (off) Test Condition: 600V, 50A, 5Ohm, 15V Gate Charge: 142 nC Part Status: Active Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 210 A Power - Max: 625 W | auf Bestellung 360 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH50N170C | IXYS | IGBT Transistors 1700V/178A High Volt | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH50N65C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 86nC Kind of package: tube Technology: GenX3™; Planar; XPT™ Turn-on time: 56ns Turn-off time: 145ns | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH50N65C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 86nC Kind of package: tube Technology: GenX3™; Planar; XPT™ Turn-on time: 56ns Turn-off time: 145ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH50N65C3 | IXYS | IGBTs 650V/130A XPT C3-Class TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH50N65C3 | IXYS | Description: IGBT 650V 130A 600W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 22ns/80ns Switching Energy: 1.3mJ (on), 370µJ (off) Test Condition: 400V, 36A, 5Ohm, 15V Gate Charge: 80 nC Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 250 A Power - Max: 600 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH50N65C3 | Littelfuse | Trans IGBT Chip N-CH 650V 132A 600W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH50N65C3D1 | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | auf Bestellung 210 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYH50N65C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 86nC Kind of package: tube Technology: GenX3™; Planar; XPT™ Turn-on time: 56ns Turn-off time: 145ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH50N65C3D1 | IXYS | IGBTs Disc IGBT XPT-GenX3 TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH50N65C3D1 | IXYS | Description: IGBT 650V 132A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 36 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 20ns/90ns Switching Energy: 800µJ (on), 800µJ (off) Test Condition: 400V, 36A, 5Ohm, 15V Gate Charge: 86 nC Current - Collector (Ic) (Max): 132 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 250 A Power - Max: 600 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH50N65C3D1 | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | auf Bestellung 210 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYH50N65C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 86nC Kind of package: tube Technology: GenX3™; Planar; XPT™ Turn-on time: 56ns Turn-off time: 145ns | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH50N65C3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 80nC Kind of package: tube Technology: GenX3™; Planar; XPT™ Turn-on time: 56ns Turn-off time: 142ns | auf Bestellung 230 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYH50N65C3H1 Produktcode: 189326 | Transistoren > Transistoren IGBT, Leistungsmodule Gehäuse: TO-247AD Vces: 650 V Vce: 2,1 V Ic 25: 130 A Ic 100: 50 A td(on)/td(off) 100-150 Grad: 22/80 | auf Bestellung 22 Stück: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| IXYH50N65C3H1 | Littelfuse | Trans IGBT Chip N-CH 650V 130A 600W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH50N65C3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 80nC Kind of package: tube Technology: GenX3™; Planar; XPT™ Turn-on time: 56ns Turn-off time: 142ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 230 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYH50N65C3H1 | IXYS | IGBTs 650V/130A XPTI C3-Class TO-247 | auf Bestellung 142 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH50N65C3H1 | IXYS | Description: IGBT 650V 130A 600W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 120 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 22ns/80ns Switching Energy: 1.3mJ (on), 370µJ (off) Test Condition: 400V, 36A, 5Ohm, 15V Gate Charge: 80 nC Part Status: Active Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 250 A Power - Max: 600 W | auf Bestellung 968 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH55N120A4 | IXYS | IGBTs TO247 1200V 55A XPT | auf Bestellung 1593 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH55N120A4 | IXYS | Description: IGBT GENX4 1200V 55A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 23ns/300ns Switching Energy: 2.3mJ (on), 5.3mJ (off) Test Condition: 600V, 40A, 5Ohm, 15V Gate Charge: 110 nC Part Status: Active Current - Collector (Ic) (Max): 175 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 350 A Power - Max: 650 W | auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH55N120A4 | Littelfuse | Discrete IGBT XPT Gen 4 1200V TO247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH55N120A4 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXYH55N120A4 - IGBT, 175 A, 1.5 V, 650 W, 1.2 kV, TO-247, 3 Pin(s) Kollektor-Emitter-Sättigungsspannung Vce(on): 1.5 DC-Kollektorstrom: 175 Anzahl der Pins: 3 Bauform - Transistor: TO-247 Kollektor-Emitter-Spannung V(br)ceo: 1.2 Verlustleistung Pd: 650 Betriebstemperatur, max.: 175 Produktpalette: XPT GenX4 SVHC: No SVHC (16-Jan-2020) | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH55N120B4 | Littelfuse | IGBTs Disc. IGBT XPT-GenX4 TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH55N120B4H1 | IXYS | IGBTs IXYH55N120B4H1 | auf Bestellung 52 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH55N120B4H1 | IXYS | Description: IGBT TRENCH 1200V 138A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 420 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A Supplier Device Package: TO-247 (IXTH) IGBT Type: Trench Td (on/off) @ 25°C: 27ns/215ns Switching Energy: 3.4mJ (on), 2.75mJ (off) Test Condition: 600V, 40A, 5Ohm, 15V Gate Charge: 120 nC Current - Collector (Ic) (Max): 138 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 310 A Power - Max: 650 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH55N120C4 | IXYS | IGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO247 | auf Bestellung 930 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH55N120C4 | LITTELFUSE | Description: LITTELFUSE - IXYH55N120C4 - IGBT, 140 A, 2.1 V, 650 W, 1.2 kV, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.1V usEccn: EAR99 euEccn: NLR Verlustleistung: 650W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: XPT Gen 4 Series Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 140A SVHC: No SVHC (17-Jan-2023) | auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYH55N120C4 | IXYS | Description: IGBT 1200V 140A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 20ns/180ns Switching Energy: 3.5mJ (on), 1.34mJ (off) Test Condition: 600V, 40A, 5Ohm, 15V Gate Charge: 114 nC Part Status: Active Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 290 A Power - Max: 650 W | auf Bestellung 210 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH55N120C4H1 | IXYS | Description: IGBT TRENCH 1200V 126A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 180 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A Supplier Device Package: TO-247 (IXTH) IGBT Type: Trench Td (on/off) @ 25°C: 20ns/180ns Switching Energy: 3.5mJ (on), 1.34mJ (off) Test Condition: 600V, 40A, 5Ohm, 15V Gate Charge: 114 nC Current - Collector (Ic) (Max): 126 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 290 A Power - Max: 650 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH55N120C4H1 | IXYS | IGBTs IXYH55N120C4H1 | auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH60N65A5 | IXYS | IGBTs 650V, 60A, XPT Gen5 A5 IGBT in TO-247AD | auf Bestellung 67 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH60N65A5 | IXYS | Description: 650V, 60A, XPT Gen5 A5 IGBT in Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Supplier Device Package: TO-247 (IXYH) Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 28ns/230ns Switching Energy: 600µJ (on), 1.45mJ (off) Test Condition: 400V, 36A, 5Ohm, 15V Gate Charge: 128 nC Current - Collector (Ic) (Max): 134 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 260 A Power - Max: 395 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH60N90C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 60A; 750W; TO247-3 Type of transistor: IGBT Power dissipation: 750W Case: TO247-3 Mounting: THT Gate charge: 107nC Kind of package: tube Pulsed collector current: 310A Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 900V Turn-on time: 104ns Turn-off time: 268ns Collector current: 60A Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | auf Bestellung 59 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYH60N90C3 | Littelfuse | Trans IGBT Chip N-CH 900V 140A 750000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH60N90C3 | IXYS | Description: IGBT 900V 140A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 30ns/87ns Switching Energy: 2.7mJ (on), 1.55mJ (off) Test Condition: 450V, 60A, 3Ohm, 15V Gate Charge: 107 nC Part Status: Active Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 310 A Power - Max: 750 W | auf Bestellung 334 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH60N90C3 | IXYS | IGBTs 900V 60A 2.7V XPT IGBT GenX3 | auf Bestellung 236 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH60N90C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 60A; 750W; TO247-3 Type of transistor: IGBT Power dissipation: 750W Case: TO247-3 Mounting: THT Gate charge: 107nC Kind of package: tube Pulsed collector current: 310A Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 900V Turn-on time: 104ns Turn-off time: 268ns Collector current: 60A Gate-emitter voltage: ±20V | auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYH75N120B4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3 Mounting: THT Pulsed collector current: 150A Turn-on time: 24ns Turn-off time: 235ns Type of transistor: IGBT Power dissipation: 1.15kW Kind of package: tube Gate charge: 157nC Technology: GenX4™; XPT™ Case: TO247; TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 75A | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH75N120B4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3 Mounting: THT Pulsed collector current: 150A Turn-on time: 24ns Turn-off time: 235ns Type of transistor: IGBT Power dissipation: 1.15kW Kind of package: tube Gate charge: 157nC Technology: GenX4™; XPT™ Case: TO247; TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 75A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH75N120B4 | IXYS | Description: IGBT Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 66 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 22ns/182ns Switching Energy: 4.5mJ (on), 2.7mJ (off) Test Condition: 600V, 50A, 3Ohm, 15V Gate Charge: 157 nC Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 440 A Power - Max: 1150 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH75N65C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 750W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 123nC Kind of package: tube Turn-on time: 90ns Turn-off time: 179ns | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH75N65C3 | IXYS | IGBTs 650V/170A XPT C3-Class TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH75N65C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 750W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 123nC Kind of package: tube Turn-on time: 90ns Turn-off time: 179ns Anzahl je Verpackung: 300 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH75N65C3 | IXYS | Description: IGBT PT 650V 170A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 27ns/93ns Switching Energy: 2.8mJ (on), 1mJ (off) Test Condition: 400V, 60A, 3Ohm, 15V Gate Charge: 123 nC Part Status: Active Current - Collector (Ic) (Max): 170 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 360 A Power - Max: 750 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH75N65C3D1 | IXYS | IGBTs Disc IGBT XPT-GenX3 TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH75N65C3D1 | IXYS | Description: IGBT PT 650V 175A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 65 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Supplier Device Package: TO-247 (IXYH) IGBT Type: PT Td (on/off) @ 25°C: 26ns/93ns Switching Energy: 2mJ (on), 950µJ (off) Test Condition: 400V, 60A, 3Ohm, 15V Gate Charge: 122 nC Part Status: Active Current - Collector (Ic) (Max): 175 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 360 A Power - Max: 750 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH75N65C3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 750W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 123nC Kind of package: tube Turn-on time: 90ns Turn-off time: 179ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH75N65C3H1 | IXYS | IGBTs 650V/170A XPT C3-Class TO-247 | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH75N65C3H1 | IXYS | Description: IGBT PT 650V 170A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 150 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 27ns/93ns Switching Energy: 2.8mJ (on), 1mJ (off) Test Condition: 400V, 60A, 3Ohm, 15V Gate Charge: 123 nC Part Status: Active Current - Collector (Ic) (Max): 170 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 360 A Power - Max: 750 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH75N65C3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 750W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 123nC Kind of package: tube Turn-on time: 90ns Turn-off time: 179ns | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH75N65C3H1 | Littelfuse | Trans IGBT Chip N-CH 650V 170A 750000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH80N90C3 | IXYS | IGBTs TO268 900V 80A XPT | auf Bestellung 504 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH80N90C3 | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830W 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH80N90C3 | IXYS | Description: IGBT 900V 165A 830W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 34ns/90ns Switching Energy: 4.3mJ (on), 1.9mJ (off) Test Condition: 450V, 80A, 2Ohm, 15V Gate Charge: 145 nC Part Status: Active Current - Collector (Ic) (Max): 165 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 360 A Power - Max: 830 W | auf Bestellung 1593 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH80N90C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 80A; 830W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 830W Case: TO247-3 Mounting: THT Gate charge: 145nC Kind of package: tube Collector-emitter voltage: 900V Collector current: 80A Pulsed collector current: 360A Turn-on time: 134ns Turn-off time: 201ns Gate-emitter voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH80N90C3 | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH80N90C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 80A; 830W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 830W Case: TO247-3 Mounting: THT Gate charge: 145nC Kind of package: tube Collector-emitter voltage: 900V Collector current: 80A Pulsed collector current: 360A Turn-on time: 134ns Turn-off time: 201ns Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH82N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 200A 1250000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH82N120C3 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXYH82N120C3 - IGBT, 82 A, 3.2 V, 1.25 kW, 1.2 kV, TO-247AD, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 3.2V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 1.25kW Bauform - Transistor: TO-247AD Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 82A SVHC: No SVHC (17-Jan-2023) | auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYH82N120C3 | IXYS | IXYH82N120C3 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH82N120C3 | IXYS | IGBT Transistors XPT IGBT C3-Class 1200V/160A | auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH82N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 200A 1250W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH82N120C3 | IXYS | Description: IGBT 1200V 200A 1250W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 29ns/192ns Switching Energy: 4.95mJ (on), 2.78mJ (off) Test Condition: 600V, 80A, 2Ohm, 15V Gate Charge: 215 nC Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 380 A Power - Max: 1250 W | auf Bestellung 410 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH85N120A4 Produktcode: 197385 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||
| IXYH85N120A4 | IXYS | IGBTs TO247 1200V 85A XPT | auf Bestellung 1523 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH85N120A4 | Littelfuse | Ultra Low-Vsat IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH85N120A4 | IXYS | Description: IGBT GENX4 1200V 85A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 40ns/400ns Switching Energy: 4.9mJ (on), 8.3mJ (off) Test Condition: 600V, 60A, 5Ohm, 15V Gate Charge: 200 nC Part Status: Active Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 520 A Power - Max: 1150 W | auf Bestellung 542 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH85N120A4 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXYH85N120A4 - IGBT, 300 A, 1.5 V, 1.15 kW, 1.2 kV, TO-247, 3 Pin(s) Kollektor-Emitter-Sättigungsspannung Vce(on): 1.5 DC-Kollektorstrom: 300 Anzahl der Pins: 3 Bauform - Transistor: TO-247 Kollektor-Emitter-Spannung V(br)ceo: 1.2 Verlustleistung Pd: 1.15 Betriebstemperatur, max.: 175 Produktpalette: XPT GenX4 SVHC: No SVHC (16-Jan-2020) | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH85N120A4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 1.2kV; 85A; 1.15kW; TO247-3 Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 85A Pulsed collector current: 520A Turn-on time: 73ns Turn-off time: 990ns Type of transistor: IGBT Power dissipation: 1.15kW Kind of package: tube Gate charge: 200nC Technology: GenX4™; Trench™; XPT™ Mounting: THT Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH85N120A4 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 1.2kV; 85A; 1.15kW; TO247-3 Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 85A Pulsed collector current: 520A Turn-on time: 73ns Turn-off time: 990ns Type of transistor: IGBT Power dissipation: 1.15kW Kind of package: tube Gate charge: 200nC Technology: GenX4™; Trench™; XPT™ Mounting: THT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH85N120C4 | IXYS | IGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO247 | auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH85N120C4 | IXYS | Description: IGBT 1200V 240A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 35ns/280ns Switching Energy: 4.3mJ (on), 2mJ (off) Test Condition: 600V, 50A, 5Ohm, 15V Gate Charge: 192 nC Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 420 A Power - Max: 1150 W | auf Bestellung 282 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH85N120C4 | LITTELFUSE | Description: LITTELFUSE - IXYH85N120C4 - IGBT, 240 A, 2 V, 1.15 kW, 1.2 kV, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2V usEccn: EAR99 euEccn: NLR Verlustleistung: 1.15kW Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: XPT Gen 4 Series Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 240A SVHC: Boric acid (14-Jun-2023) | auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYH8N250C | IXYS | IXYH8N250C THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH8N250C | Littelfuse | IXYH8N250C | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH8N250C | IXYS | Description: IGBT 2500V 29A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 5 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 11ns/180ns Switching Energy: 2.6mJ (on), 1.07mJ (off) Test Condition: 1250V, 8A, 15Ohm, 15V Gate Charge: 45 nC Part Status: Active Current - Collector (Ic) (Max): 29 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 70 A Power - Max: 280 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH8N250CHV | IXYS | IXYH8N250CHV THT IGBT transistors | auf Bestellung 58 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYH8N250CHV | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH8N250CHV | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | auf Bestellung 5010 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYH8N250CHV | IXYS | Description: IGBT Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 5 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A Supplier Device Package: TO-247HV Td (on/off) @ 25°C: 11ns/180ns Switching Energy: 2.6mJ (on), 1.07mJ (off) Test Condition: 1250V, 8A, 15Ohm, 15V Gate Charge: 45 nC Part Status: Active Current - Collector (Ic) (Max): 29 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 70 A Power - Max: 280 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH8N250CHV | IXYS | IGBTs TO263 2500V 8A XPT | auf Bestellung 514 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH8N250CV1HV | IXYS | IGBT Transistors IGBT XPT-HI VOLTAGE | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH8N250CV1HV | IXYS | IXYH8N250CV1HV THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH8N250CV1HV | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH8N250CV1HV | IXYS | Description: IGBT 2500V 29A TO247HV Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 5 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 11ns/180ns Switching Energy: 2.6mJ (on), 1.07mJ (off) Test Condition: 1250V, 8A, 15Ohm, 15V Gate Charge: 45 nC Part Status: Active Current - Collector (Ic) (Max): 29 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 70 A Power - Max: 280 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH90N65A5 | IXYS | Description: IGBT PT 650V 220A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 40ns/420ns Switching Energy: 1.3mJ (on), 3.4mJ (off) Test Condition: 400V, 50A, 5Ohm, 15V Gate Charge: 260 nC Part Status: Active Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 600 A Power - Max: 650 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYH90N65A5 | IXYS | IGBTs XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO247 | auf Bestellung 305 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYH90N65A5 | LITTELFUSE | Description: LITTELFUSE - IXYH90N65A5 - IGBT, 220 A, 1.22 V, 650 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage hazardous: false Kollektor-Emitter-Sättigungsspannung: 1.22 usEccn: EAR99 Kollektor-Emitter-Sättigungsspannung Vce(on): 1.22 Verlustleistung Pd: 650 euEccn: NLR Verlustleistung: 650 Bauform - Transistor: TO-247 Qualifizierungsstandard der Automobilindustrie: - Kollektor-Emitter-Spannung V(br)ceo: 650 Anzahl der Pins: 3 Produktpalette: XPT GenX5 Series Kollektor-Emitter-Spannung, max.: 650 DC-Kollektorstrom: 220 Betriebstemperatur, max.: 175 Kontinuierlicher Kollektorstrom: 220 SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||
| IXYJ20N120C3D1 | IXYS | Description: IGBT 1200V 21A 105W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Supplier Device Package: ISO247 Td (on/off) @ 25°C: 20ns/90ns Switching Energy: 1.3mJ (on), 500µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 53 nC Part Status: Active Current - Collector (Ic) (Max): 21 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 84 A Power - Max: 105 W | auf Bestellung 390 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
| IXYJ20N120C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247 Type of transistor: IGBT Technology: GenX3™; XPT™ Power dissipation: 105W Case: TO247 Mounting: THT Gate charge: 53nC Kind of package: tube Collector current: 21A Pulsed collector current: 40A Turn-on time: 20ns Turn-off time: 90ns Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYJ20N120C3D1 | IXYS | IGBTs XPT 1200V IGBT GenX7 XPT IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYJ20N120C3D1 | Littelfuse | Trans IGBT Chip N-CH 1200V 21A 105000mW 3-Pin(3+Tab) TO-247 ISO | Produkt ist nicht verfügbar | |||||||||||||||
| IXYJ20N120C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247 Type of transistor: IGBT Technology: GenX3™; XPT™ Power dissipation: 105W Case: TO247 Mounting: THT Gate charge: 53nC Kind of package: tube Collector current: 21A Pulsed collector current: 40A Turn-on time: 20ns Turn-off time: 90ns Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYK100N120B3 | IXYS | Littelfuse | Produkt ist nicht verfügbar | |||||||||||||||
| IXYK100N120B3 | Littelfuse | Trans IGBT Chip N-CH 1200V 225A 1150000mW | Produkt ist nicht verfügbar | |||||||||||||||
| IXYK100N120C3 | IXYS | IGBT Transistors 1200V 188A XPT IGBT | auf Bestellung 23 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYK100N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 188A 1150000mW 3-Pin(3+Tab) TO-264AA | Produkt ist nicht verfügbar | |||||||||||||||
| IXYK100N120C3 | IXYS | Description: IGBT 1200V 188A 1150W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A Supplier Device Package: TO-264 (IXYK) Td (on/off) @ 25°C: 32ns/123ns Switching Energy: 6.5mJ (on), 2.9mJ (off) Test Condition: 600V, 100A, 1Ohm, 15V Gate Charge: 270 nC Part Status: Active Current - Collector (Ic) (Max): 188 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 490 A Power - Max: 1150 W | auf Bestellung 81 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYK100N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 188A 1150mW 3-Pin(3+Tab) TO-264AA | Produkt ist nicht verfügbar | |||||||||||||||
| IXYK100N120C3 | IXYS | IXYK100N120C3 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYK100N65B3D1 | IXYS | IGBTs Disc IGBT XPT-GenX3 TO-264(3) | Produkt ist nicht verfügbar | |||||||||||||||
| IXYK100N65B3D1 | Littelfuse | XPTTM 650V IGBT IXYK100N65B3D1 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYK100N65B3D1 | IXYS | Description: IGBT 650V 225A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A Supplier Device Package: TO-264 Td (on/off) @ 25°C: 29ns/150ns Switching Energy: 1.27mJ (on), 2mJ (off) Test Condition: 400V, 50A, 3Ohm, 15V Gate Charge: 168 nC Current - Collector (Ic) (Max): 225 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 460 A Power - Max: 830 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYK110N120A4 | LITTELFUSE | Description: LITTELFUSE - IXYK110N120A4 - IGBT, 375 A, 1.45 V, 1.36 kW, 1.2 kV, TO-264, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.45V usEccn: EAR99 euEccn: NLR Verlustleistung: 1.36kW Bauform - Transistor: TO-264 Anzahl der Pins: 3Pin(s) Produktpalette: XPT GenX4 Series Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 375A SVHC: To Be Advised | auf Bestellung 308 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYK110N120A4 | IXYS | IGBTs TO264 1200V 110A GENX4 | auf Bestellung 39 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYK110N120A4 | IXYS | Description: IGBT 1200V 110A GENX4 XPT TO-264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A Supplier Device Package: TO-264 (IXYK) IGBT Type: PT Td (on/off) @ 25°C: 42ns/550ns Switching Energy: 2.5mJ (on), 8.4mJ (off) Test Condition: 600V, 50A, 1.5Ohm, 15V Gate Charge: 305 nC Part Status: Active Current - Collector (Ic) (Max): 375 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 900 A Power - Max: 1360 W | auf Bestellung 875 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYK110N120B4 | LITTELFUSE | Description: LITTELFUSE - IXYK110N120B4 - IGBT, 340 A, 1.66 V, 1.36 kW, 1.2 kV, TO-264, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.66V usEccn: EAR99 euEccn: NLR Verlustleistung: 1.36kW Bauform - Transistor: TO-264 Anzahl der Pins: 3Pin(s) Produktpalette: XPT Gen 4 Series Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 340A SVHC: To Be Advised | auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYK110N120B4 | IXYS | IGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO264 | auf Bestellung 198 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYK110N120B4 | IXYS | Description: IGBT 1200V 110A GEN4 XPT TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A Supplier Device Package: TO-264 (IXYK) Td (on/off) @ 25°C: 45ns/390ns Switching Energy: 3.6mJ (on), 3.85mJ (off) Test Condition: 600V, 50A, 2Ohm, 15V Gate Charge: 340 nC Part Status: Active Current - Collector (Ic) (Max): 340 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 800 A Power - Max: 1360 W | auf Bestellung 274 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYK110N120C4 | IXYS | Description: IGBT 1200V 110A GEN4 XPT TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 48 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A Supplier Device Package: PLUS264™ Td (on/off) @ 25°C: 40ns/320ns Switching Energy: 3.6mJ (on), 1.9mJ (off) Test Condition: 600V, 50A, 2Ohm, 15V Gate Charge: 330 nC Part Status: Active Current - Collector (Ic) (Max): 310 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 740 A Power - Max: 1360 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYK110N120C4 | IXYS | IGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO264 | auf Bestellung 39 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYK120N120B3 | IXYS | IGBTs TO264 1200V 120A GENX3 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYK120N120B3 | IXYS | Description: DISC IGBT XPT-GENX3 TO-264(3) Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 54 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A Supplier Device Package: TO-264 (IXYK) IGBT Type: PT Td (on/off) @ 25°C: 30ns/340ns Switching Energy: 9.7mJ (on), 21.5mJ (off) Test Condition: 960V, 100A, 1Ohm, 15V Gate Charge: 400 nC Part Status: Active Current - Collector (Ic) (Max): 320 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 800 A Power - Max: 1500 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYK120N120C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 1.5kW Case: TO264 Mounting: THT Gate charge: 412nC Kind of package: tube Collector current: 120A Pulsed collector current: 700A Turn-on time: 105ns Turn-off time: 346ns Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V | auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYK120N120C3 | IXYS | IGBTs 1200V 220A XPT IGBT | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYK120N120C3 | IXYS | Description: IGBT 1200V 240A 1500W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A Supplier Device Package: TO-264 (IXYK) Td (on/off) @ 25°C: 35ns/176ns Switching Energy: 6.75mJ (on), 5.1mJ (off) Test Condition: 600V, 100A, 1Ohm, 15V Gate Charge: 412 nC Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 700 A Power - Max: 1500 W | auf Bestellung 236 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYK120N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 240A 1500W 3-Pin(3+Tab) TO-264 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYK120N120C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 1.5kW Case: TO264 Mounting: THT Gate charge: 412nC Kind of package: tube Collector current: 120A Pulsed collector current: 700A Turn-on time: 105ns Turn-off time: 346ns Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | auf Bestellung 96 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYK120N120C3 | LITTELFUSE | Description: LITTELFUSE - IXYK120N120C3 - TRANSISTOR, IGBT, 1.2KV, 240A, TO-264 tariffCode: 85412900 Transistormontage: Through Hole rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.55V usEccn: EAR99 euEccn: NLR Verlustleistung: 1.5kW Bauform - Transistor: TO-264 Anzahl der Pins: 3Pin(s) Produktpalette: XPT GenX3 Series Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C directShipCharge: 25 Kontinuierlicher Kollektorstrom: 240A SVHC: No SVHC (17-Dec-2014) | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYK120N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 220A 1500000mW 3-Pin(3+Tab) TO-264 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYK140N120A4 | LITTELFUSE | Description: LITTELFUSE - IXYK140N120A4 - IGBT, 480 A, 1.34 V, 1.5 kW, 1.2 kV, TO-264, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.34V usEccn: EAR99 euEccn: NLR Verlustleistung: 1.5kW Bauform - Transistor: TO-264 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 480A SVHC: To Be Advised | auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYK140N120A4 | Littelfuse | Ultra Low-Vsat IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYK140N120A4 | IXYS | IGBTs TO264 1200V 140A GENX4 | auf Bestellung 2093 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYK140N120A4 | IXYS | Description: IGBT PT 1200V 480A TO-264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 47 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A Supplier Device Package: TO-264 (IXYK) IGBT Type: PT Td (on/off) @ 25°C: 52ns/590ns Switching Energy: 4.9mJ (on), 12mJ (off) Test Condition: 600V, 70A, 1.5Ohm, 15V Gate Charge: 420 nC Part Status: Active Current - Collector (Ic) (Max): 480 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 1200 A Power - Max: 1500 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYK140N90C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 1.63kW Case: TO264 Mounting: THT Gate charge: 330nC Kind of package: tube Collector-emitter voltage: 900V Collector current: 140A Pulsed collector current: 840A Turn-on time: 122ns Turn-off time: 0.3µs Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYK140N90C3 | IXYS | IGBTs TO264 900V 140A GENX3 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYK140N90C3 | IXYS | Description: IGBT 900V 310A 1630W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A Supplier Device Package: TO-264 (IXYK) Td (on/off) @ 25°C: 40ns/145ns Switching Energy: 4.3mJ (on), 4mJ (off) Test Condition: 450V, 100A, 1Ohm, 15V Gate Charge: 330 nC Part Status: Active Current - Collector (Ic) (Max): 310 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 840 A Power - Max: 1630 W | auf Bestellung 373 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYK140N90C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 1.63kW Case: TO264 Mounting: THT Gate charge: 330nC Kind of package: tube Collector-emitter voltage: 900V Collector current: 140A Pulsed collector current: 840A Turn-on time: 122ns Turn-off time: 0.3µs Gate-emitter voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYK180N65A5 | IXYS | IGBTs 650V, 180A, XPT Gen5 A5 IGBT in TO-264 | auf Bestellung 400 Stücke: Lieferzeit 332-336 Tag (e) |
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| IXYK180N65A5 | IXYS | Description: 650V, 180A, XP Gen5 A5 IGBT in Packaging: Bulk Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Supplier Device Package: TO-264 (IXYK) Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 70ns/500ns Switching Energy: 420µJ (on), 4.1mJ (off) Test Condition: 300V, 100A, 2Ohm, 15V Gate Charge: 654 nC Current - Collector (Ic) (Max): 400 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 1.03 kA Power - Max: 1150 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYK200N65B3 | IXYS | IXYK200N65B3 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYK220N65A5 | IXYS | IGBTs 650V, 220A, XPT Gen5 A5 IGBT in TO-264 | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYK220N65A5 | IXYS | Description: 650V, 220A, XPT Gen5 A5 IGBT in Packaging: Bulk Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A Supplier Device Package: TO-264 (IXYK) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 64ns/540ns Switching Energy: 1.3mJ (on), 7.95mJ (off) Test Condition: 300V, 100A, 1Ohm, 15V Gate Charge: 750 nC Current - Collector (Ic) (Max): 510 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 1.18 kA Power - Max: 1.16 kW | Produkt ist nicht verfügbar | |||||||||||||||
| IXYK300N65A3 | Littelfuse | IGBT Transistors IGBT DISC XPT | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYK300N65A3 | IXYS | IGBTs TO264 650V 300A IGBT | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYK30N170CV1 | IXYS | Description: DISC IGBT XPT-HI VOLTAGE TO-264( Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 33 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 30A Supplier Device Package: TO-264 (IXYK) IGBT Type: PT Td (on/off) @ 25°C: 16ns/143ns Switching Energy: 3.6mJ (on), 1.8mJ (off) Test Condition: 850V, 30A, 2.7Ohm, 15V Gate Charge: 150 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 250 A Power - Max: 937 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYK85N120C4H1 | IXYS | IGBTs IXYK85N120C4H1 | auf Bestellung 125 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYK85N120C4H1 | IXYS | Description: IGBT TRENCH 1200V 220A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 265 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A Supplier Device Package: SOT-227B IGBT Type: Trench Td (on/off) @ 25°C: 35ns/280ns Switching Energy: 4.3mJ (on), 2mJ (off) Test Condition: 600V, 50A, 5Ohm, 15V Gate Charge: 192 nC Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 420 A Power - Max: 1150 W | auf Bestellung 84 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYL40N250CV1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 577W; ISOPLUS i5-pac™ Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 2.5kV Collector current: 40A Power dissipation: 577W Case: ISOPLUS i5-pac™ Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: THT Gate charge: 0.27µC Kind of package: tube Turn-on time: 43ns Turn-off time: 505ns Features of semiconductor devices: high voltage Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYL40N250CV1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 577W; ISOPLUS i5-pac™ Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 2.5kV Collector current: 40A Power dissipation: 577W Case: ISOPLUS i5-pac™ Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: THT Gate charge: 0.27µC Kind of package: tube Turn-on time: 43ns Turn-off time: 505ns Features of semiconductor devices: high voltage | Produkt ist nicht verfügbar | |||||||||||||||
| IXYL40N250CV1 | IXYS | Description: IGBT 2500V 70A ISOPLUSI5 Packaging: Tube Package / Case: ISOPLUSi5-Pak™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 210 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A Supplier Device Package: ISOPLUSi5-Pak™ Td (on/off) @ 25°C: 21ns/200ns Switching Energy: 11.7mJ (on), 6.9mJ (off) Test Condition: 1250V, 40A, 1Ohm, 15V Gate Charge: 270 nC Part Status: Active Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 400 A Power - Max: 577 W | auf Bestellung 725 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYL40N250CV1 | IXYS | IGBTs ISOPLUS 2500V 40A DIODE | Produkt ist nicht verfügbar | |||||||||||||||
| IXYL50N170CV1 | Littelfuse | Disc IGBT XPT-Hi Voltage ISOPLUS264 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYL60N450 | Littelfuse | High Voltage IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYL60N450 | IXYS | IGBTs ISOPLUS 4500V 38A IGBT | auf Bestellung 104 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYL60N450 | IXYS | IXYL60N450 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYL60N450 | LITTELFUSE | Description: LITTELFUSE - IXYL60N450 - TRANS, IGBT, 4.5KV, 90A, ISOPLUS I5-PAK Kollektor-Emitter-Spannung, max.: 4.5 Verlustleistung: 417 Anzahl der Pins: 3 Kontinuierlicher Kollektorstrom: 90 Bauform - Transistor: ISOPLUS i5-PAK Kollektor-Emitter-Sättigungsspannung: 2.64 Betriebstemperatur, max.: 150 Produktpalette: XPT Series SVHC: To Be Advised | auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYL60N450 | IXYS | Description: IGBT 4500V 90A ISOPLUSI5 Packaging: Tube Package / Case: ISOPLUSi5-Pak™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 60A Supplier Device Package: ISOPLUSi5-Pak™ Td (on/off) @ 25°C: 55ns/450ns Test Condition: 960V, 60A, 4.7Ohm, 15V Gate Charge: 366 nC Part Status: Active Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 4500 V Current - Collector Pulsed (Icm): 680 A Power - Max: 417 W | auf Bestellung 143 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN100N120B3H1 | IXYS | IXYN100N120B3H1 IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN100N120B3H1 | IXYS | Description: IGBT MOD 1200V 165A 690W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 165 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 690 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 6 nF @ 25 V | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN100N120B3H1 | Littelfuse | Trans IGBT Chip N-CH 1200V 165A 690000mW 4-Pin SOT-227B | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN100N120B3H1 | IXYS | IGBT Transistors IGBT XPT-GENX3 SOT-227UI( | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN100N120B3H1 | Littelfuse | Trans IGBT Chip N-CH 1200V 165A 690W 4-Pin SOT-227B | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN100N120C3 | IXYS | Description: IGBT MOD 1200V 152A 830W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B Part Status: Active Current - Collector (Ic) (Max): 152 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 830 W Current - Collector Cutoff (Max): 25 µA Input Capacitance (Cies) @ Vce: 6 nF @ 25 V | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN100N120C3 | Littelfuse | Trans IGBT Module N-CH 1200V 152A 830000mW | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN100N120C3 | IXYS | IGBTs XPT 1200V IGBT GenX3 XPT IGBT | auf Bestellung 263 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN100N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 152A 830000mW | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN100N120C3 | IXYS | IXYN100N120C3 IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN100N120C3H1 | Littelfuse | Trans IGBT Chip N-CH 1200V 140A 690W 4-Pin SOT-227B | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN100N120C3H1 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXYN100N120C3H1 - IGBT-Modul, Einfach, 134 A, 3.5 V, 690 W, 150 °C, SOT-227B tariffCode: 85412900 Transistormontage: Platte rohsCompliant: Y-EX IGBT-Technologie: IGBT 3 High-Speed Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 3.5V Dauer-Kollektorstrom: 134A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 3.5V Verlustleistung Pd: 690W euEccn: NLR Verlustleistung: 690W Bauform - Transistor: SOT-227B Kollektor-Emitter-Spannung V(br)ceo: 1.2kV Anzahl der Pins: 4Pin(s) Produktpalette: XPT GenX3 Kollektor-Emitter-Spannung, max.: 1.2kV IGBT-Konfiguration: Einfach productTraceability: No Wandlerpolarität: n-Kanal DC-Kollektorstrom: 134A Betriebstemperatur, max.: 150°C SVHC: Lead (17-Jan-2023) | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYN100N120C3H1 | IXYS | IXYN100N120C3H1 IGBT modules | auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYN100N120C3H1 | IXYS | Description: IGBT MOD 1200V 134A 690W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B Part Status: Active Current - Collector (Ic) (Max): 134 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 690 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 6 nF @ 25 V | auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN100N120C3H1 | Littelfuse | Trans IGBT Chip N-CH 1200V 134A 690000mW 4-Pin SOT-227B | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN100N120C3H1 | IXYS | IGBTs XPT 1200V IGBT GenX3 XPT IGBT | auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN100N65A3 | IXYS | IXYN100N65A3 IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN100N65A3 | IXYS | Description: IGBT MOD 650V 170A 600W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 170 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 600 W Current - Collector Cutoff (Max): 25 µA | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN100N65A3 | IXYS | IGBTs SOT227 650V 100A GENX3 | auf Bestellung 399 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN100N65A3 | Littelfuse | IGBT Module, 650V IGBT Gen X3TM | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN100N65B3D1 | IXYS | IGBTs Disc IGBT XPT-GenX3 SOT-227UI(mini | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN100N65B3D1 | IXYS | IXYN100N65B3D1 IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN100N65B3D1 | IXYS | Description: DISC IGBT XPT-GENX3 SOT-227UI(MI Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 185 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 600 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 4.74 nF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN100N65C3H1 | LITTELFUSE | Description: LITTELFUSE - IXYN100N65C3H1 - IGBT-Modul, Einfach, 160 A, 1.8 V, 600 W, 175 °C, SOT-227B tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: - Sperrschichttemperatur Tj, max.: 175°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.8V Dauer-Kollektorstrom: 160A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 1.8V Verlustleistung Pd: 600W euEccn: NLR Verlustleistung: 600W Bauform - Transistor: SOT-227B Kollektor-Emitter-Spannung V(br)ceo: 650V Produktpalette: PW Series Kollektor-Emitter-Spannung, max.: 650V IGBT-Konfiguration: Einfach productTraceability: No DC-Kollektorstrom: 160A Betriebstemperatur, max.: 175°C SVHC: No SVHC (17-Jan-2022) | auf Bestellung 206 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYN100N65C3H1 | Littelfuse | Trans IGBT Chip N-CH 650V 160A 600W 4-Pin SOT-227B | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN100N65C3H1 | IXYS | IXYN100N65C3H1 IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN100N65C3H1 | IXYS | Description: IGBT MOD 650V 166A 600W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis, Stud Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 166 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 600 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 4.98 nF @ 25 V | auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN100N65C3H1 | IXYS | IGBTs 650V/166A XPT Copacked SOT-227B | auf Bestellung 481 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN110N120A4 | IXYS | Description: IGBT PT 1200V 275A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A Supplier Device Package: SOT-227B IGBT Type: PT Td (on/off) @ 25°C: 42ns/550ns Switching Energy: 2.5mJ (on), 8.4mJ (off) Test Condition: 600V, 50A, 2Ohm, 15V Gate Charge: 305 nC Part Status: Active Current - Collector (Ic) (Max): 275 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 950 A Power - Max: 830 W | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN110N120A4 | IXYS | IGBTs SOT227 1200V 110A GENX4 | auf Bestellung 175 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN110N120B4H1 | Littelfuse | Disc IGBT XPT Gen4 1200V 110A SOT227B | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN110N120B4H1 | IXYS | Description: 1200V,110A, XPT GEN4 B4 CO-PACK Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: Trench Current - Collector (Ic) (Max): 218 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 830 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 5460 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN110N120B4H1 | IXYS | IGBT Modules IXYN110N120B4H1 | auf Bestellung 300 Stücke: Lieferzeit 344-348 Tag (e) |
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| IXYN110N120C4 | IXYS | Description: IGBT 1200V 110A GEN4 XPT SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A NTC Thermistor: No Supplier Device Package: SOT-227 Part Status: Active Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 830 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 5.42 nF @ 25 V | auf Bestellung 296 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN110N120C4 | IXYS | IGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT SOT227B | auf Bestellung 268 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN110N120C4H1 | IXYS | IGBT Modules IXYN110N120C4H1 | auf Bestellung 252 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN110N120C4H1 | IXYS | Description: 1200V, 110A, XPT GEN4 C4 CO-PACK Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: Trench Current - Collector (Ic) (Max): 210 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 830 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 5420 pF @ 25 V | auf Bestellung 226 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN120N120C3 | IXYS | Description: IGBT MOD 1200V 240A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A NTC Thermistor: No Supplier Device Package: SOT-227B - miniBLOC Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1200 W Current - Collector Cutoff (Max): 25 µA | auf Bestellung 183 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN120N120C3 | IXYS | IGBTs SOT227 1200V 120A XPT | auf Bestellung 294 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN120N120C3 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B Technology: GenX3™; XPT™ Power dissipation: 1.2kW Case: SOT227B Collector current: 120A Pulsed collector current: 700A Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Gate-emitter voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN120N120C3 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B Technology: GenX3™; XPT™ Power dissipation: 1.2kW Case: SOT227B Collector current: 120A Pulsed collector current: 700A Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN120N120C3 | Littelfuse | Trans IGBT Module N-CH 1200V 240A 1200000mW | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN120N65B3D1 | IXYS | Description: IGBT PT 650V 250A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 28 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A Supplier Device Package: SOT-227B IGBT Type: PT Td (on/off) @ 25°C: 30ns/168ns Switching Energy: 1.34mJ (on), 1.5mJ (off) Test Condition: 400V, 50A, 2Ohm, 15V Gate Charge: 250 nC Current - Collector (Ic) (Max): 250 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 770 A Power - Max: 830 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN120N65B3D1 | IXYS | IGBTs Disc IGBT XPT-GenX3 SOT-227UI(mini | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN120N65B3D1 | Littelfuse | Trans IGBT Module N-CH 650V 250A 830000mW | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN120N65B3D1 | Littelfuse | Trans IGBT Module N-CH 650V 250A 830000mW | auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYN120N65C3D1 | IXYS | Description: IGBT PT 650V 190A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 29 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A Supplier Device Package: SOT-227B IGBT Type: PT Td (on/off) @ 25°C: 28ns/127ns Switching Energy: 1.25mJ (on), 500µJ (off) Test Condition: 400V, 50A, 2Ohm, 15V Gate Charge: 265 nC Current - Collector (Ic) (Max): 190 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 620 A Power - Max: 830 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN120N65C3D1 | IXYS | IGBTs Disc IGBT XPT-GenX3 SOT-227UI(mini | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN140N120A4 | Littelfuse | Ultra Low-Vsat IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN140N120A4 | IXYS | Description: IGBT 140A 1200V SOT227B MINIBLOC Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 380 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1070 W Current - Collector Cutoff (Max): 25 µA Input Capacitance (Cies) @ Vce: 8.3 nF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN140N120A4 | IXYS | IGBTs SOT227 1200V 140A XPT | auf Bestellung 150 Stücke: Lieferzeit 548-552 Tag (e) |
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| IXYN150N60B3 | IXYS | IGBTs SOT227 600V 140A GENX3 | auf Bestellung 288 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN150N60B3 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B Technology: GenX3™; XPT™ Power dissipation: 830W Case: SOT227B Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Max. off-state voltage: 0.6kV Gate-emitter voltage: ±20V Collector current: 140A Pulsed collector current: 750A | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN150N60B3 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B Technology: GenX3™; XPT™ Power dissipation: 830W Case: SOT227B Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Max. off-state voltage: 0.6kV Gate-emitter voltage: ±20V Collector current: 140A Pulsed collector current: 750A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN150N60B3 | IXYS | Description: IGBT Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 88 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A Supplier Device Package: SOT-227B Td (on/off) @ 25°C: 27ns/167ns Switching Energy: 4.2mJ (on), 2.6mJ (off) Test Condition: 400V, 75A, 2Ohm, 15V Gate Charge: 260 nC Current - Collector (Ic) (Max): 250 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 750 A Power - Max: 830 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN180N65A5 | IXYS | Description: 650V, 180A, XP Gen5 A5 IGBT in S Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B Current - Collector (Ic) (Max): 340 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 940 W Current - Collector Cutoff (Max): 25 µA Input Capacitance (Cies) @ Vce: 8640 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN180N65A5 | IXYS | IGBTs 650V, 180A, XPT Gen5 A5 IGBT in SOT-227 | auf Bestellung 400 Stücke: Lieferzeit 332-336 Tag (e) |
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| IXYN200N65B5 | IXYS | IGBTs 650V, 200A, XPT Gen5 B5 IGBT in SOT-227 | auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN220N65A5 | IXYS | Description: 650V, 220A, XP Gen5 A5 IGBT in S Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B Current - Collector (Ic) (Max): 510 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 1.2 kW Current - Collector Cutoff (Max): 25 µA Input Capacitance (Cies) @ Vce: 11.7 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN220N65A5 | IXYS | IGBTs 650V, 220A, XPT Gen5 A5 IGBT in SOT-227 | auf Bestellung 88 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN300N65A3 | IXYS | IGBTs SOT227 650V 270A GENX3 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN300N65A3 | IXYS | Description: DISC IGBT XPT-GENX3 SOT-227B(MIN | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN30N170CV1 | IXYS | IXYN30N170CV1 IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN30N170CV1 | IXYS | Description: IGBT 1700V 88A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 160 ns Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A Supplier Device Package: SOT-227B Td (on/off) @ 25°C: 28ns/150ns Switching Energy: 5.9mJ (on), 3.3mJ (off) Test Condition: 850V, 30A, 2.7Ohm, 15V Gate Charge: 140 nC Part Status: Active Current - Collector (Ic) (Max): 88 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 275 A Power - Max: 680 W | auf Bestellung 182 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN30N170CV1 | Littelfuse | IGBT Module, High Voltage IGBT w/ Diode | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN30N170CV1 | IXYS | IGBT Modules 1700V/85A High Voltage XPT IGBT | auf Bestellung 322 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN50N170CV1 | Littelfuse | Trans IGBT Module N-CH 1700V 120A 880000mW | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN50N170CV1 | IXYS | IGBT Transistors 1700V/120A High Volt | auf Bestellung 98 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN50N170CV1 | IXYS | IXYN50N170CV1 IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN50N170CV1 | IXYS | Description: IGBT 1700V 120A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 255 ns Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A Supplier Device Package: SOT-227B Td (on/off) @ 25°C: 22ns/236ns Switching Energy: 8.7mJ (on), 5.6mJ (off) Test Condition: 850V, 50A, 1Ohm, 15V Gate Charge: 260 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 485 A Power - Max: 880 W | auf Bestellung 126 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN75N65C3D1 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W Technology: GenX3™; XPT™ Collector current: 75A Power dissipation: 600W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 360A Type of module: IGBT Max. off-state voltage: 650V Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN75N65C3D1 | IXYS | IGBTs Disc IGBT XPT-GenX3 SOT-227UI(mini | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN75N65C3D1 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W Technology: GenX3™; XPT™ Collector current: 75A Power dissipation: 600W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 360A Type of module: IGBT Max. off-state voltage: 650V Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN75N65C3D1 | IXYS | Description: IGBT 650V 150A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 65 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Supplier Device Package: SOT-227B Td (on/off) @ 25°C: 26ns/93ns Switching Energy: 2mJ (on), 950µJ (off) Test Condition: 400V, 60A, 3Ohm, 15V Gate Charge: 122 nC Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 360 A Power - Max: 600 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN75N65C3H1 | Littelfuse | IXYN75N65C3H1 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN80N90C3H1 | IXYS | Description: IGBT MOD 900V 115A 500W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A NTC Thermistor: No Supplier Device Package: SOT-227B Part Status: Active Current - Collector (Ic) (Max): 115 A Voltage - Collector Emitter Breakdown (Max): 900 V Power - Max: 500 W Current - Collector Cutoff (Max): 25 µA Input Capacitance (Cies) @ Vce: 4.55 nF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN80N90C3H1 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 70A; SOT227B; 500W Technology: GenX3™; XPT™ Power dissipation: 500W Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Max. off-state voltage: 900V Collector current: 70A Pulsed collector current: 340A Semiconductor structure: single transistor Gate-emitter voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN80N90C3H1 | IXYS | IGBT Modules 900V 70A 2.7V XPT IGBTs GenX3 w/ Diode | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN80N90C3H1 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 70A; SOT227B; 500W Technology: GenX3™; XPT™ Power dissipation: 500W Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Max. off-state voltage: 900V Collector current: 70A Pulsed collector current: 340A Semiconductor structure: single transistor Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN80N90C3H1 | Littelfuse | Trans IGBT Module N-CH 900V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN82N120C3 | IXYS | IGBT Transistors 1200V XPT IGBT GenX3 | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN82N120C3 | IXYS | IXYN82N120C3 IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN82N120C3 | Littelfuse | IGBT Module, 1200V XPT IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN82N120C3 | IXYS | Description: IGBT MOD 1200V 105A 500W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A NTC Thermistor: No Supplier Device Package: SOT-227B Part Status: Active Current - Collector (Ic) (Max): 105 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 500 W Current - Collector Cutoff (Max): 25 µA Input Capacitance (Cies) @ Vce: 4.1 nF @ 25 V | auf Bestellung 290 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN82N120C3H1 | Littelfuse | Trans IGBT Module N-CH 1200V 105A 500000mW | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN82N120C3H1 | IXYS | IXYN82N120C3H1 IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN82N120C3H1 | Littelfuse | Trans IGBT Module N-CH 1200V 105A 500000mW | Produkt ist nicht verfügbar | |||||||||||||||
| IXYN82N120C3H1 | IXYS | Description: IGBT MOD 1200V 105A 500W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A NTC Thermistor: No Supplier Device Package: SOT-227B Part Status: Active Current - Collector (Ic) (Max): 105 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 500 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 4.06 nF @ 25 V | auf Bestellung 294 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN82N120C3H1 | IXYS | IGBTs XPT IGBT C3-Class 1200V/105A; Copack | auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN85N120C4H1 | IXYS | IGBT Modules IXYN85N120C4H1 | auf Bestellung 486 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYN85N120C4H1 | IXYS | Description: 1200V, 85A, XPT GEN4 C4 CO-PACK Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: Trench Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 600 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 4030 pF @ 25 V | auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYP10N65B3D1 | IXYS | IGBTs Disc IGBT XPT-GenX3 TO-220AB/FP | auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYP10N65B3D1 | IXYS | Description: IGBT PT 650V 32A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 29 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A Supplier Device Package: TO-220 IGBT Type: PT Td (on/off) @ 25°C: 17ns/125ns Switching Energy: 300µJ (on), 200µJ (off) Test Condition: 400V, 10A, 50Ohm, 15V Gate Charge: 20 nC Part Status: Active Current - Collector (Ic) (Max): 32 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 62 A Power - Max: 160 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP10N65B3D1 | Littelfuse | XPTTM 650V IGBT GenX3TM w/Diode | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP10N65C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 160W Case: TO220-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 54A Turn-on time: 44ns Turn-off time: 128ns Gate charge: 18nC | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP10N65C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 160W Case: TO220-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 54A Turn-on time: 44ns Turn-off time: 128ns Gate charge: 18nC Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP10N65C3 | IXYS | Description: IGBT 650V 30A 160W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 20ns/77ns Switching Energy: 240µJ (on), 110µJ (off) Test Condition: 400V, 10A, 50Ohm, 15V Gate Charge: 18 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 54 A Power - Max: 160 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP10N65C3D1 | IXYS | Description: IGBT PT 650V 30A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 170 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Supplier Device Package: TO-220 IGBT Type: PT Td (on/off) @ 25°C: 20ns/77ns Switching Energy: 240µJ (on), 110µJ (off) Test Condition: 400V, 10A, 50Ohm, 15V Gate Charge: 18 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 54 A Power - Max: 160 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP10N65C3D1 | IXYS | IGBTs Disc IGBT XPT-GenX3 TO-220AB/FP | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP10N65C3D1M | IXYS | Description: IGBT 650V 15A TO220 ISOL TAB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 26 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A Supplier Device Package: TO-220 Isolated Tab Td (on/off) @ 25°C: 20ns/77ns Switching Energy: 240µJ (on), 170µJ (off) Test Condition: 400V, 10A, 50Ohm, 15V Gate Charge: 18 nC Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 50 A Power - Max: 53 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP10N65C3D1M | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 7A; 53W; TO220FP Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 53W Case: TO220FP Mounting: THT Kind of package: tube Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 7A Pulsed collector current: 50A Turn-on time: 44ns Turn-off time: 128ns Gate charge: 18nC Anzahl je Verpackung: 1 Stücke | auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYP10N65C3D1M | IXYS | IGBTs Disc IGBT XPT-GenX3 TO-220AB/FP | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP10N65C3D1M | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 7A; 53W; TO220FP Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 53W Case: TO220FP Mounting: THT Kind of package: tube Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 7A Pulsed collector current: 50A Turn-on time: 44ns Turn-off time: 128ns Gate charge: 18nC | auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYP15N65B3D1 | IXYS | Description: IGBT TO220AB Packaging: Tube Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP15N65B3D1 | IXYS | IGBTs Disc IGBT XPT-GenX3 TO-220AB/FP | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP15N65C3 | IXYS | Description: IGBT PT 650V 38A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 15ns/68ns Switching Energy: 270µJ (on), 230µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 19 nC Part Status: Active Current - Collector (Ic) (Max): 38 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP15N65C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 200W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 19nC Kind of package: tube Turn-on time: 36ns Turn-off time: 122ns | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP15N65C3 | IXYS | IGBTs TO220 650V 15A GENX3 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP15N65C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 200W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 19nC Kind of package: tube Turn-on time: 36ns Turn-off time: 122ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP15N65C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 200W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 19nC Kind of package: tube Turn-on time: 36ns Turn-off time: 102ns | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP15N65C3D1 | IXYS | IGBTs TO220 650V 15A DIODE | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP15N65C3D1 | Littelfuse | High Performance 650V IGBT Chip | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP15N65C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 200W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 19nC Kind of package: tube Turn-on time: 36ns Turn-off time: 102ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP15N65C3D1 | Littelfuse | High Performance 650V IGBT Chip | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP15N65C3D1 | IXYS | Description: IGBT PT 650V 38A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 110 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 15ns/68ns Switching Energy: 270µJ (on), 230µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 19 nC Part Status: Active Current - Collector (Ic) (Max): 38 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP15N65C3D1M | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 9A; 57W; TO220FP Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 9A Power dissipation: 57W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 19nC Kind of package: tube Turn-on time: 36ns Turn-off time: 122ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP15N65C3D1M | IXYS | Description: IGBT PT 650V 16A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 15ns/68ns Switching Energy: 270µJ (on), 230µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 19 nC Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 48 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP15N65C3D1M | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 9A; 57W; TO220FP Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 9A Power dissipation: 57W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 19nC Kind of package: tube Turn-on time: 36ns Turn-off time: 122ns | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP15N65C3D1M | IXYS | IGBTs 650V/16A XPT IGBT C3 Copacked TO-220 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP20N120A4 | IXYS | Description: IGBT DISCRETE TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 54 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A Supplier Device Package: TO-220 (IXYP) IGBT Type: PT Td (on/off) @ 25°C: 12ns/275ns Switching Energy: 3.6mJ (on), 2.75mJ (off) Test Condition: 960V, 20A, 10Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 135 A Power - Max: 375 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP20N120A4 | IXYS | IGBTs TO263 1200V 20A XPT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP20N120A4 | Littelfuse | 1200V IGBT Chip Transistor | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP20N120B4 | IXYS | Description: IGBT DISCRETE TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 47 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-220 (IXYP) Td (on/off) @ 25°C: 15ns/200ns Switching Energy: 3.9mJ (on), 1.6mJ (off) Test Condition: 960V, 20A, 10Ohm, 15V Gate Charge: 44 nC Part Status: Active Current - Collector (Ic) (Max): 76 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 130 A Power - Max: 375 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP20N120B4 | IXYS | IGBTs TO220 1200V 20A IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP20N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 40A 278000mW 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP20N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 40A 278W 3-Pin(3+Tab) TO-220AB | auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYP20N120C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 278W Case: TO220-3 Mounting: THT Kind of package: tube Gate charge: 53nC Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 96A Turn-on time: 60ns Turn-off time: 200ns | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP20N120C3 | IXYS | Description: IGBT 1200V 40A 278W TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 20ns/90ns Switching Energy: 1.3mJ (on), 500µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 53 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 96 A Power - Max: 278 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP20N120C3 | IXYS | IGBTs GenX3 1200V XPT IGBT | auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYP20N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 40A 278W 3-Pin(3+Tab) TO-220AB | auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYP20N120C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 278W Case: TO220-3 Mounting: THT Kind of package: tube Gate charge: 53nC Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 96A Turn-on time: 60ns Turn-off time: 200ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP20N120C3 транзистор Produktcode: 203199 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||
| IXYP20N120C4 | IXYS | IGBTs TO247 1200V 20A IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP20N120C4 | IXYS | Description: IGBT DISCRETE TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 53 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-220 (IXYP) Td (on/off) @ 25°C: 14ns/160ns Switching Energy: 4.4mJ (on), 1mJ (off) Test Condition: 960V, 20A, 10Ohm, 15V Gate Charge: 44 nC Part Status: Active Current - Collector (Ic) (Max): 68 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 375 W | auf Bestellung 1300 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYP20N65B3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 230W Case: TO220-3 Mounting: THT Kind of package: tube Gate charge: 29nC Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Collector current: 20A Pulsed collector current: 108A Turn-on time: 39ns Turn-off time: 271ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP20N65B3D1 | IXYS | Description: IGBT PT 650V 58A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-220 IGBT Type: PT Td (on/off) @ 25°C: 12ns/103ns Switching Energy: 500µJ (on), 450µJ (off) Test Condition: 400V, 20A, 20Ohm, 15V Gate Charge: 29 nC Part Status: Active Current - Collector (Ic) (Max): 58 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 108 A Power - Max: 230 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP20N65B3D1 | IXYS | IGBTs Disc IGBT XPT-GenX3 TO-220AB/FP | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP20N65B3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 230W Case: TO220-3 Mounting: THT Kind of package: tube Gate charge: 29nC Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Collector current: 20A Pulsed collector current: 108A Turn-on time: 39ns Turn-off time: 271ns | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP20N65C3 | IXYS | Description: DISC IGBT XPT-GENX3 TO-220AB/FP Packaging: Tube Operating Temperature: -55°C ~ 175°C (TJ) Reverse Recovery Time (trr): 135 ns Gate Charge: 30 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 105 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP20N65C3 | IXYS | IGBTs TO220 650V 20A GENX3 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP20N65C3D1 | Littelfuse | Trans IGBT Chip N-CH 650V 50A 200W 3-Pin(3+Tab) TO-220AB | auf Bestellung 108 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYP20N65C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 200W Case: TO220-3 Mounting: THT Kind of package: tube Gate charge: 30nC Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Collector current: 20A Pulsed collector current: 105A Turn-on time: 51ns Turn-off time: 132ns | auf Bestellung 326 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYP20N65C3D1 | LITTELFUSE | Description: LITTELFUSE - IXYP20N65C3D1 - IGBT, 50 A, 2.27 V, 200 W, 650 V, TO-220AB, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.27V usEccn: EAR99 euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 50A SVHC: To Be Advised | auf Bestellung 451 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYP20N65C3D1 | Littelfuse | Trans IGBT Chip N-CH 650V 50A 200000mW 3-Pin(3+Tab) TO-220AB | auf Bestellung 110 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYP20N65C3D1 | IXYS | Description: IGBT 650V 18A 50W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 135 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 19ns/80ns Switching Energy: 430µJ (on), 350µJ (off) Test Condition: 400V, 20A, 20Ohm, 15V Gate Charge: 30 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 105 A Power - Max: 200 W | auf Bestellung 1544 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYP20N65C3D1 | Littelfuse | Trans IGBT Chip N-CH 650V 50A 200W 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP20N65C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 200W Case: TO220-3 Mounting: THT Kind of package: tube Gate charge: 30nC Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Collector current: 20A Pulsed collector current: 105A Turn-on time: 51ns Turn-off time: 132ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 326 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYP20N65C3D1 | IXYS | IGBTs Disc IGBT XPT-GenX3 TO-220AB/FP | auf Bestellung 1384 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYP20N65C3D1 | Littelfuse | Trans IGBT Chip N-CH 650V 50A 200W 3-Pin(3+Tab) TO-220AB | auf Bestellung 110 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYP20N65C3D1M | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 50W Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 30nC Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Collector current: 9A Pulsed collector current: 105A Turn-on time: 51ns Turn-off time: 132ns | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP20N65C3D1M | Littelfuse | Trans IGBT Chip N-CH 650V 18A 50000mW 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP20N65C3D1M | IXYS | Description: IGBT 650V 18A 50W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 19ns/80ns Switching Energy: 430µJ (on), 350µJ (off) Test Condition: 400V, 20A, 20Ohm, 15V Gate Charge: 30 nC Part Status: Active Current - Collector (Ic) (Max): 18 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 105 A Power - Max: 50 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP20N65C3D1M | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 50W Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 30nC Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Collector current: 9A Pulsed collector current: 105A Turn-on time: 51ns Turn-off time: 132ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP20N65C3D1M | IXYS | IGBTs 650V/18A XPT IGBT C3 Copacked TO-220 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP24N100A4 | IXYS | IGBTs TO263 1KV 24A XPT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP24N100A4 | IXYS | Description: IGBT DISCRETE TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 47 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A Supplier Device Package: TO-220 (IXYP) IGBT Type: PT Td (on/off) @ 25°C: 13ns/216ns Switching Energy: 3.5mJ (on), 2.3mJ (off) Test Condition: 800V, 24A, 10Ohm, 15V Gate Charge: 44 nC Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 145 A Power - Max: 375 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP24N100C4 | IXYS | Description: IGBT DISCRETE TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A Supplier Device Package: TO-220 IGBT Type: PT Td (on/off) @ 25°C: 15ns/147ns Switching Energy: 3.6mJ (on), 1mJ (off) Test Condition: 800V, 24A, 10Ohm, 15V Gate Charge: 43 nC Current - Collector (Ic) (Max): 76 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 132 A Power - Max: 375 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP24N100C4 | IXYS | IGBTs TO220 1KV 24A IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP30N120A4 | IXYS | Description: IGBT DISCRETE TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A Supplier Device Package: TO-220 (IXYP) Td (on/off) @ 25°C: 15ns/235ns Switching Energy: 4mJ (on), 3.4mJ (off) Test Condition: 960V, 25A, 5Ohm, 15V Gate Charge: 57 nC Part Status: Active Current - Collector (Ic) (Max): 106 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 184 A Power - Max: 500 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP30N120A4 | IXYS | IGBTs TO220 1KV 30A IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP30N120B4 | IXYS | Description: IGBT DISCRETE TO-220 Packaging: Tube Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP30N120B4 | IXYS | IGBTs TO220 1200V 30A IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP30N120C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 500W Case: TO220-3 Mounting: THT Gate charge: 69nC Kind of package: tube Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 145A Turn-on time: 71ns Turn-off time: 296ns Anzahl je Verpackung: 300 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP30N120C3 | IXYS | Description: IGBT 1200V 75A 500W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 19ns/130ns Switching Energy: 2.6mJ (on), 1.1mJ (off) Test Condition: 600V, 30A, 10Ohm, 15V Gate Charge: 69 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 145 A Power - Max: 500 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP30N120C3 | IXYS | IGBTs GenX3 1200V XPT IGBT | auf Bestellung 285 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYP30N120C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 500W Case: TO220-3 Mounting: THT Gate charge: 69nC Kind of package: tube Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 145A Turn-on time: 71ns Turn-off time: 296ns | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP30N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 75A 500000mW 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP30N120C4 | IXYS | IGBTs TO220 1200V 30A IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP30N120C4 | IXYS | Description: IGBT DISCRETE TO-220 Packaging: Tube Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP30N65C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 270W Case: TO220-3 Mounting: THT Gate charge: 44nC Kind of package: tube Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Turn-on time: 59ns Turn-off time: 0.12µs Pulsed collector current: 118A Collector current: 30A | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP30N65C3 | IXYS | Description: DISC IGBT XPT-GENX3 TO-220AB/FP Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Supplier Device Package: TO-220 IGBT Type: PT Td (on/off) @ 25°C: 21ns/75ns Switching Energy: 1mJ (on), 270µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 44 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 118 A Power - Max: 270 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP30N65C3 | IXYS | IGBTs TO220 650V 30A XPT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP30N65C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 270W Case: TO220-3 Mounting: THT Gate charge: 44nC Kind of package: tube Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Turn-on time: 59ns Turn-off time: 0.12µs Pulsed collector current: 118A Collector current: 30A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP35N65C5 | IXYS | Description: 650V, 35A, XP Gen5 C5 IGBT in TO Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-220 (IXYP) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 21ns/122ns Switching Energy: 230µJ (on), 180µJ (off) Test Condition: 300V, 20A, 5Ohm, 15V Gate Charge: 96 nC Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 190 A Power - Max: 326 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP35N65C5 | IXYS | IGBTs 650V, 35A, XPT Gen5 C5 IGBT in TO-220 | auf Bestellung 272 Stücke: Lieferzeit 318-322 Tag (e) |
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| IXYP48N65A5 | IXYS | Description: 650V, 48A, XP Gen5 A5 IGBT in Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A Supplier Device Package: TO-220 (IXYP) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/205ns Switching Energy: 400µJ (on), 1.25mJ (off) Test Condition: 400V, 30A, 5Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 236 A Power - Max: 326 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP48N65A5 | IXYS | IGBTs 650V, 48A, XPT Gen5 A5 IGBT in TO-220 | auf Bestellung 400 Stücke: Lieferzeit 318-322 Tag (e) |
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| IXYP50N65C3 | Littelfuse | Trans IGBT Chip N-CH 650V 132A 600W 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP50N65C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 86nC Kind of package: tube Technology: GenX3™; Planar; XPT™ Turn-on time: 56ns Turn-off time: 145ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP50N65C3 | IXYS | IGBTs 650V/130A XPT C3-Class TO-220 | auf Bestellung 599 Stücke: Lieferzeit 332-336 Tag (e) |
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| IXYP50N65C3 | Littelfuse | Trans IGBT Chip N-CH 650V 132A 600W 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP50N65C3 | IXYS | Description: IGBT 650V 130A 600W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 22ns/80ns Switching Energy: 1.3mJ (on), 370µJ (off) Test Condition: 400V, 36A, 5Ohm, 15V Gate Charge: 80 nC Part Status: Active Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 250 A Power - Max: 600 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP50N65C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 86nC Kind of package: tube Technology: GenX3™; Planar; XPT™ Turn-on time: 56ns Turn-off time: 145ns | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP60N65A5 | LITTELFUSE | Description: LITTELFUSE - IXYP60N65A5 - IGBT, 134 A, 1.23 V, 395 W, 650 V, TO-220, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: TBA hazardous: false rohsPhthalatesCompliant: TBA Kollektor-Emitter-Sättigungsspannung: 1.23 usEccn: EAR99 Kollektor-Emitter-Sättigungsspannung Vce(on): 1.23 Verlustleistung Pd: 395 euEccn: NLR Verlustleistung: 395 Bauform - Transistor: TO-220 Qualifizierungsstandard der Automobilindustrie: - Kollektor-Emitter-Spannung V(br)ceo: 650 Anzahl der Pins: 3 Produktpalette: XPT GenX5 Series Kollektor-Emitter-Spannung, max.: 650 productTraceability: No DC-Kollektorstrom: 134 Betriebstemperatur, max.: 175 Kontinuierlicher Kollektorstrom: 134 SVHC: No SVHC (17-Jan-2022) | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYP60N65A5 | IXYS | Description: IGBT PT 650V 134A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A Supplier Device Package: TO-220 (IXYP) IGBT Type: PT Td (on/off) @ 25°C: 28ns/230ns Switching Energy: 600µJ (on), 1.45mJ (off) Test Condition: 400V, 36A, 5Ohm, 15V Gate Charge: 128 nC Part Status: Active Current - Collector (Ic) (Max): 134 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 260 A Power - Max: 395 W | auf Bestellung 202 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYP60N65A5 | IXYS | IGBTs XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO220 | auf Bestellung 319 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYP8N90C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 125W Case: TO220-3 Mounting: THT Gate charge: 13.3nC Kind of package: tube Collector-emitter voltage: 900V Collector current: 8A Pulsed collector current: 48A Turn-on time: 39ns Turn-off time: 238ns Gate-emitter voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP8N90C3 | IXYS | IGBTs XPT 900V IGBT GenX3 XPT IGBT | auf Bestellung 297 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYP8N90C3 | Littelfuse | Trans IGBT Chip N-CH 900V 20A 125000mW 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP8N90C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 125W Case: TO220-3 Mounting: THT Gate charge: 13.3nC Kind of package: tube Collector-emitter voltage: 900V Collector current: 8A Pulsed collector current: 48A Turn-on time: 39ns Turn-off time: 238ns Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP8N90C3 | IXYS | Description: IGBT 900V 20A 125W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 16ns/40ns Switching Energy: 460µJ (on), 180µJ (off) Test Condition: 450V, 8A, 30Ohm, 15V Gate Charge: 13.3 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 48 A Power - Max: 125 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP8N90C3D1 | IXYS | IGBTs XPT 900V IGBT GenX3 XPT IGBTs | auf Bestellung 120 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYP8N90C3D1 | Littelfuse | Trans IGBT Chip N-CH 900V 20A 125mW 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP8N90C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 125W Case: TO220-3 Mounting: THT Gate charge: 13.3nC Kind of package: tube Collector-emitter voltage: 900V Collector current: 8A Pulsed collector current: 48A Turn-on time: 39ns Turn-off time: 238ns Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | auf Bestellung 147 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYP8N90C3D1 | IXYS | Description: IGBT 900V 20A 125W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Input Type: Standard Reverse Recovery Time (trr): 114 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 16ns/40ns Switching Energy: 460µJ (on), 180µJ (off) Test Condition: 450V, 8A, 30Ohm, 15V Gate Charge: 13.3 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 48 A Power - Max: 125 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP8N90C3D1 | Littelfuse | Trans IGBT Chip N-CH 900V 20A 125mW 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||
| IXYP8N90C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 125W Case: TO220-3 Mounting: THT Gate charge: 13.3nC Kind of package: tube Collector-emitter voltage: 900V Collector current: 8A Pulsed collector current: 48A Turn-on time: 39ns Turn-off time: 238ns Gate-emitter voltage: ±20V | auf Bestellung 147 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYQ30N65B3D1 | IXYS | IGBTs Disc IGBT XPT-GenX3 TO-3P (3) | Produkt ist nicht verfügbar | |||||||||||||||
| IXYQ40N65B3D1 | IXYS | IGBT Transistors IGBT XPT-GENX3 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYQ40N65C3D1 | IXYS | Description: IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYQ40N65C3D1 | IXYS | IGBT Transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYR100N120C3 | IXYS | IXYR100N120C3 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYR100N120C3 | IXYS | IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs | Produkt ist nicht verfügbar | |||||||||||||||
| IXYR100N120C3 | IXYS | Description: IGBT 1200V 104A 484W ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A Supplier Device Package: ISOPLUS247™ Td (on/off) @ 25°C: 32ns/123ns Switching Energy: 6.5mJ (on), 2.9mJ (off) Test Condition: 600V, 100A, 1Ohm, 15V Gate Charge: 270 nC Part Status: Active Current - Collector (Ic) (Max): 104 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 480 A Power - Max: 484 W | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYR100N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 104A 484000mW 3-Pin(3+Tab) ISOPLUS 247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYR100N65A3V1 | IXYS | IGBT Modules Disc IGBT PT-Low Frequency ISOPLUS247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYR100N65A3V1 | IXYS | Description: IGBT Packaging: Tube Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||
| IXYR50N120C3D1 | Littelfuse | Trans IGBT Chip N-CH 1200V 56A 290000mW 3-Pin(3+Tab) ISOPLUS 247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYR50N120C3D1 | IXYS | IXYR50N120C3D1 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYR50N120C3D1 | IXYS | IGBTs ISOPLUS 1200V 32A DIODE | Produkt ist nicht verfügbar | |||||||||||||||
| IXYR50N120C3D1 | IXYS | Description: IGBT 1200V 56A 290W ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A Supplier Device Package: ISOPLUS247™ Td (on/off) @ 25°C: 28ns/133ns Switching Energy: 3mJ (on), 1mJ (off) Test Condition: 600V, 50A, 5Ohm, 15V Gate Charge: 142 nC Current - Collector (Ic) (Max): 56 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 210 A Power - Max: 290 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT120N65A5HV | IXYS | IGBTs 650V, 120A, XPT Gen5 A5 IGBT in TO-268HV | auf Bestellung 398 Stücke: Lieferzeit 332-336 Tag (e) |
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| IXYT120N65A5HV | IXYS | Description: 650V, 120A, XP Gen5 A5 IGBT in Packaging: Bulk Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXYT) Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 75A IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 46ns/390ns Switching Energy: 2.46mJ (on), 3.55mJ (off) Test Condition: 400V, 60A, 3Ohm, 15V Gate Charge: 314 nC Current - Collector (Ic) (Max): 290 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 790 A Power - Max: 830 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT12N250CV1HV | IXYS | Description: IGBT 2500V 28A TO268HV Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 16 ns Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A Supplier Device Package: TO-268HV (IXYT) Td (on/off) @ 25°C: 12ns/167ns Switching Energy: 3.56mJ (on), 1.7mJ (off) Test Condition: 1250V, 12A, 10Ohm, 15V Gate Charge: 56 nC Current - Collector (Ic) (Max): 28 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 80 A Power - Max: 310 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT12N250CV1HV | IXYS | IGBTs TO268 2500V 12A DIODE | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT20N120C3D1HV | Littelfuse | Trans IGBT Chip N-CH 1200V 36A 230000mW 3-Pin(2+Tab) D3PAK | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT20N120C3D1HV | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV Type of transistor: IGBT Technology: GenX3™; XPT™ Power dissipation: 230W Case: TO268HV Mounting: SMD Gate charge: 53nC Kind of package: tube Collector current: 17A Pulsed collector current: 88A Turn-on time: 60ns Turn-off time: 0.22µs Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT20N120C3D1HV | IXYS | IGBTs TO268 1200V 17A DIODE | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT20N120C3D1HV | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV Type of transistor: IGBT Technology: GenX3™; XPT™ Power dissipation: 230W Case: TO268HV Mounting: SMD Gate charge: 53nC Kind of package: tube Collector current: 17A Pulsed collector current: 88A Turn-on time: 60ns Turn-off time: 0.22µs Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT20N120C3D1HV | IXYS | Description: IGBT 1200V 36A TO268HV Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 29 ns Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Supplier Device Package: TO-268HV (IXYT) Td (on/off) @ 25°C: 20ns/90ns Switching Energy: 1.3mJ (on), 1mJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 53 nC Part Status: Active Current - Collector (Ic) (Max): 36 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 88 A Power - Max: 230 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT25N250CHV | IXYS | IGBT Transistors 2500V/95A , HV XPT IGBT | auf Bestellung 240 Stücke: Lieferzeit 346-350 Tag (e) |
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| IXYT25N250CHV | IXYS | Description: IGBT 2500V 95A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A Supplier Device Package: TO-268 Td (on/off) @ 25°C: 15ns/230ns Switching Energy: 8.3mJ (on), 7.3mJ (off) Test Condition: 1250V, 25A, 5Ohm, 15V Gate Charge: 147 nC Part Status: Active Current - Collector (Ic) (Max): 95 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 235 A Power - Max: 937 W | auf Bestellung 880 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYT25N250CHV | Littelfuse | Trans IGBT Chip N-CH 2500V 95A 937000mW 3-Pin(2+Tab) TO-268HV | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT25N250CHV | IXYS | IXYT25N250CHV SMD IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT30N450HV | Littelfuse | High Voltage XPTTMIGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT30N450HV | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT30N450HV | IXYS | IXYT30N450HV SMD IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT30N450HV | IXYS | IGBTs TO268 4500V 30A XPT | auf Bestellung 297 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYT30N450HV | IXYS | Description: IGBT 4500V 60A TO268HV Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A Supplier Device Package: TO-268HV (IXYT) Td (on/off) @ 25°C: 38ns/168ns Test Condition: 960V, 30A, 10Ohm, 15V Gate Charge: 88 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 4500 V Current - Collector Pulsed (Icm): 200 A Power - Max: 430 W | auf Bestellung 130 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYT30N65C3H1HV | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV Type of transistor: IGBT Technology: GenX3™; Planar; Sonic FRD™; XPT™ Power dissipation: 270W Case: TO268HV Mounting: SMD Gate charge: 44nC Kind of package: tube Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Turn-on time: 59ns Turn-off time: 0.12µs Pulsed collector current: 118A Collector current: 30A | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT30N65C3H1HV | IXYS | IGBTs 650V/60A XPT Copacked TO-268HV | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT30N65C3H1HV | IXYS | Description: IGBT 650V 60A 270W TO268HV | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT30N65C3H1HV | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV Type of transistor: IGBT Technology: GenX3™; Planar; Sonic FRD™; XPT™ Power dissipation: 270W Case: TO268HV Mounting: SMD Gate charge: 44nC Kind of package: tube Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Turn-on time: 59ns Turn-off time: 0.12µs Pulsed collector current: 118A Collector current: 30A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT40N120A4HV | IXYS | Description: IGBT PT 1200V 140A TO268HV Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A Supplier Device Package: TO-268HV (IXYT) IGBT Type: PT Td (on/off) @ 25°C: 22ns/204ns Switching Energy: 2.3mJ (on), 3.75mJ (off) Test Condition: 600V, 32A, 5Ohm, 15V Gate Charge: 90 nC Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 275 A Power - Max: 600 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT40N120A4HV | Littelfuse | Ultra Low-Vsat IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT40N120A4HV | IXYS | IGBTs TO268 1200V 40A XPT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT40N120A4HV-TRL | Littelfuse | Discrete IGBT XPT Gen 4 1200V TO268HV | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT55N120A4HV | IXYS | IGBTs TO268 1200V 55A XPT | auf Bestellung 405 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYT55N120A4HV | IXYS | Description: IGBT PT 1200V 175A TO268HV Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A Supplier Device Package: TO-268HV (IXYT) IGBT Type: PT Td (on/off) @ 25°C: 23ns/300ns Switching Energy: 2.3mJ (on), 5.3mJ (off) Test Condition: 600V, 40A, 5Ohm, 15V Gate Charge: 110 nC Part Status: Active Current - Collector (Ic) (Max): 175 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 350 A Power - Max: 650 W | auf Bestellung 228 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYT80N90C3 | IXYS | Description: IGBT 900V 165A TO268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A Supplier Device Package: TO-268AA Td (on/off) @ 25°C: 34ns/90ns Switching Energy: 4.3mJ (on), 1.9mJ (off) Test Condition: 450V, 80A, 2Ohm, 15V Gate Charge: 145 nC Current - Collector (Ic) (Max): 165 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 360 A Power - Max: 830 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT80N90C3 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 80A; 830W; TO268 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 830W Case: TO268 Mounting: SMD Gate charge: 145nC Kind of package: tube Collector-emitter voltage: 900V Collector current: 80A Pulsed collector current: 360A Turn-on time: 134ns Turn-off time: 201ns Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT80N90C3 | IXYS | IGBTs TO268 900V 80A XPT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT80N90C3 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 80A; 830W; TO268 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 830W Case: TO268 Mounting: SMD Gate charge: 145nC Kind of package: tube Collector-emitter voltage: 900V Collector current: 80A Pulsed collector current: 360A Turn-on time: 134ns Turn-off time: 201ns Gate-emitter voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT85N120A4HV | IXYS | IGBTs TO268 1200V 85A XPT | auf Bestellung 564 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYT85N120A4HV | Littelfuse | Discrete IGBT XPT Gen 4 1200V TO268HV | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT85N120A4HV | IXYS | Description: IGBT PT 1200V 300A TO268HV Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A Supplier Device Package: TO-268HV (IXYT) IGBT Type: PT Td (on/off) @ 25°C: 40ns/400ns Switching Energy: 4.9mJ (on), 8.3mJ (off) Test Condition: 600V, 60A, 5Ohm, 15V Gate Charge: 200 nC Part Status: Active Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 520 A Power - Max: 1150 W | auf Bestellung 279 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYT90N65A5HV | IXYS | Description: 650V, 90A, XP Gen5 A5 IGBT in TO Packaging: Bulk Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A Supplier Device Package: TO-268HV (IXYT) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/436ns Switching Energy: 1mJ (on), 3mJ (off) Test Condition: 400V, 40A, 5Ohm, 15V Gate Charge: 260 nC Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 600 A Power - Max: 650 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYT90N65A5HV | IXYS | IGBTs 650V, 90A, XPT Gen5 A5 IGBT in TO-268HV | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYX100N120B3 | Littelfuse | Trans IGBT Chip N-CH 1200V 225A 1150000mW | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX100N120B3 | IXYS | IXYX100N120B3 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX100N120B3 | IXYS | IGBT Transistors IGBT XPT-GENX3 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX100N120B3 | IXYS | Description: IGBT 1200V 188A 1150W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 30ns/153ns Switching Energy: 7.7mJ (on), 7.1mJ (off) Test Condition: 600V, 100A, 1Ohm, 15V Gate Charge: 250 nC Part Status: Active Current - Collector (Ic) (Max): 225 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 530 A Power - Max: 1150 W | auf Bestellung 992 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYX100N120C3 | IXYS | IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYX100N120C3 | IXYS | Description: IGBT 1200V 188A 1150W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 32ns/123ns Switching Energy: 6.5mJ (on), 2.9mJ (off) Test Condition: 600V, 100A, 1Ohm, 15V Gate Charge: 270 nC Part Status: Active Current - Collector (Ic) (Max): 188 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 490 A Power - Max: 1150 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX100N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 188A 1150000mW 3-Pin(3+Tab) PLUS 247 | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYX100N120C3 | IXYS | IXYX100N120C3 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX100N65B3D1 | IXYS | Description: IGBT PT 650V 225A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 156 ns Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 29ns/150ns Switching Energy: 1.27mJ (on), 1.37mJ (off) Test Condition: 400V, 50A, 3Ohm, 15V Gate Charge: 168 nC Current - Collector (Ic) (Max): 225 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 460 A Power - Max: 830 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX100N65B3D1 | IXYS | IXYX100N65B3D1 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX100N65B3D1 | IXYS | IGBTs Disc IGBT XPT-GenX3 TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX110N120A4 | IXYS | IGBTs PLUS247 1200V 110A GENX4 | auf Bestellung 103 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYX110N120A4 | IXYS | Description: IGBT 1200V 110A GNX4 XPT PLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 42ns/550ns Switching Energy: 2.5mJ (on), 8.4mJ (off) Test Condition: 600V, 50A, 1.5Ohm, 15V Gate Charge: 305 nC Part Status: Active Current - Collector (Ic) (Max): 375 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 900 A Power - Max: 1360 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX110N120A4 | LITTELFUSE | Description: LITTELFUSE - IXYX110N120A4 - IGBT, 375 A, 1.45 V, 1.36 kW, 1.2 kV, PLUS247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: TBA hazardous: false rohsPhthalatesCompliant: TBA Kollektor-Emitter-Sättigungsspannung: 1.45 usEccn: EAR99 Kollektor-Emitter-Sättigungsspannung Vce(on): 1.45 Verlustleistung Pd: 1.36 euEccn: NLR Verlustleistung: 1.36 Bauform - Transistor: PLUS247 Qualifizierungsstandard der Automobilindustrie: - Kollektor-Emitter-Spannung V(br)ceo: 1.2 Anzahl der Pins: 3 Produktpalette: XPT GenX4 Series Kollektor-Emitter-Spannung, max.: 1.2 productTraceability: No DC-Kollektorstrom: 375 Betriebstemperatur, max.: 175 Kontinuierlicher Kollektorstrom: 375 SVHC: No SVHC (17-Jan-2022) | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYX110N120B4 | Littelfuse | Disc IGBT XPT Gen4 1200V 110A PLUS247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX110N120B4 | IXYS | Description: IGBT 1200V 110A GEN4 XPT PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 45ns/390ns Switching Energy: 3.6mJ (on), 3.85mJ (off) Test Condition: 600V, 50A, 2Ohm, 15V Gate Charge: 340 nC Part Status: Active Current - Collector (Ic) (Max): 340 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 800 A Power - Max: 1360 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX110N120B4 | IXYS | IGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247 | auf Bestellung 329 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYX110N120C4 | LITTELFUSE | Description: LITTELFUSE - IXYX110N120C4 - IGBT, 310 A, 1.9 V, 1.36 kW, 1.2 kV, PLUS247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.9V usEccn: EAR99 euEccn: NLR Verlustleistung: 1.36kW Bauform - Transistor: PLUS247 Anzahl der Pins: 3Pin(s) Produktpalette: XPT Gen 4 Series Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 310A SVHC: Boric acid (14-Jun-2023) | auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYX110N120C4 | IXYS | IGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247 | auf Bestellung 202 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYX110N120C4 | Littelfuse | XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX110N120C4 | IXYS | Description: IGBT 1200V 310A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 48 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 40ns/320ns Switching Energy: 3.6mJ (on), 1.9mJ (off) Test Condition: 600V, 50A, 2Ohm, 15V Gate Charge: 330 nC Part Status: Active Current - Collector (Ic) (Max): 310 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 740 A Power - Max: 1360 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX120N120B3 | IXYS | IGBTs PLUS247 1200V 120A GENX3 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX120N120B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 1.5kW Case: PLUS247™ Mounting: THT Gate charge: 400nC Kind of package: tube Collector current: 120A Pulsed collector current: 800A Turn-on time: 84ns Turn-off time: 826ns Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V | auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYX120N120B3 | IXYS | Description: IGBT Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 54 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 30ns/340ns Switching Energy: 9.7mJ (on), 21.5mJ (off) Test Condition: 960V, 100A, 1Ohm, 15V Gate Charge: 400 nC Part Status: Active Current - Collector (Ic) (Max): 320 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 800 A Power - Max: 1500 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX120N120B3 | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX120N120B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 1.5kW Case: PLUS247™ Mounting: THT Gate charge: 400nC Kind of package: tube Collector current: 120A Pulsed collector current: 800A Turn-on time: 84ns Turn-off time: 826ns Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYX120N120C3 | IXYS | Description: IGBT 1200V 240A 1500W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 35ns/176ns Switching Energy: 6.75mJ (on), 5.1mJ (off) Test Condition: 600V, 100A, 1Ohm, 15V Gate Charge: 412 nC Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 700 A Power - Max: 1500 W | auf Bestellung 181 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYX120N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 220A 1500W 3-Pin(3+Tab) PLUS 247 | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYX120N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 220A 1500000mW 3-Pin(3+Tab) PLUS 247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX120N120C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 1.5kW Case: PLUS247™ Mounting: THT Gate charge: 412nC Kind of package: tube Collector current: 120A Pulsed collector current: 700A Turn-on time: 105ns Turn-off time: 346ns Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYX120N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 220A 1500W 3-Pin(3+Tab) PLUS 247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX120N120C3 | IXYS | IGBTs PLUS247 1200V 120A GENX3 | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYX120N120C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 1.5kW Case: PLUS247™ Mounting: THT Gate charge: 412nC Kind of package: tube Collector current: 120A Pulsed collector current: 700A Turn-on time: 105ns Turn-off time: 346ns Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V | auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYX120N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 220A 1500W 3-Pin(3+Tab) PLUS 247 | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYX140N120A4 | IXYS | IGBTs PLUS247 1200V 140A GENX4 | auf Bestellung 300 Stücke: Lieferzeit 430-434 Tag (e) |
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| IXYX140N120A4 | IXYS | Description: IGBT PT 1200V 480A PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 47 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 52ns/590ns Switching Energy: 4.9mJ (on), 12mJ (off) Test Condition: 600V, 70A, 1.5Ohm, 15V Gate Charge: 420 nC Part Status: Active Current - Collector (Ic) (Max): 480 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 1200 A Power - Max: 1500 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX140N120A4 | LITTELFUSE | Description: LITTELFUSE - IXYX140N120A4 - IGBT, 480 A, 1.34 V, 1.5 kW, 1.2 kV, PLUS247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.34V usEccn: EAR99 euEccn: NLR Verlustleistung: 1.5kW Bauform - Transistor: PLUS247 Anzahl der Pins: 3Pin(s) Produktpalette: XPT GenX4 Series Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 480A SVHC: Boric acid (14-Jun-2023) | auf Bestellung 357 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYX140N90C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 1.63kW Case: PLUS247™ Mounting: THT Gate charge: 330nC Kind of package: tube Collector-emitter voltage: 900V Collector current: 140A Pulsed collector current: 840A Turn-on time: 122ns Turn-off time: 0.3µs Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX140N90C3 | IXYS | Description: IGBT 900V 310A 1630W TO247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 40ns/145ns Switching Energy: 4.3mJ (on), 4mJ (off) Test Condition: 450V, 100A, 1Ohm, 15V Gate Charge: 330 nC Current - Collector (Ic) (Max): 310 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 840 A Power - Max: 1630 W | auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYX140N90C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 1.63kW Case: PLUS247™ Mounting: THT Gate charge: 330nC Kind of package: tube Collector-emitter voltage: 900V Collector current: 140A Pulsed collector current: 840A Turn-on time: 122ns Turn-off time: 0.3µs Gate-emitter voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX140N90C3 | LITTELFUSE | Description: LITTELFUSE - IXYX140N90C3 - IGBT, 310 A, 2.15 V, 1.63 kW, 900 V, PLUS247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.15V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 1.63kW Bauform - Transistor: PLUS247 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 900V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 310A SVHC: Boric acid (14-Jun-2023) | auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYX140N90C3 | IXYS | IGBTs PLUS247 900V 140A GENX3 | auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYX140N90C3 | Littelfuse | Trans IGBT Chip N-CH 900V 310A 1630000mW 3-Pin(3+Tab) PLUS 247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX180N65A5 | IXYS | IGBTs 650V, 180A, XPT Gen5 A5 IGBT in PLUS247 | auf Bestellung 400 Stücke: Lieferzeit 332-336 Tag (e) |
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| IXYX180N65A5 | IXYS | Description: 650V, 180A, XP Gen5 A5 IGBT in P Packaging: Bulk Package / Case: TO-247-3 Variant Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 70ns/500ns Switching Energy: 420µJ (on), 4.1mJ (off) Test Condition: 300V, 100A, 2Ohm, 15V Gate Charge: 654 nC Current - Collector (Ic) (Max): 400 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 1.03 kA Power - Max: 1150 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX200N65B3 | IXYS | Description: IGBT Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 108 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 60ns/370ns Switching Energy: 5mJ (on), 4mJ (off) Test Condition: 400V, 100A, 0Ohm, 15V Gate Charge: 340 nC Current - Collector (Ic) (Max): 410 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 1100 A Power - Max: 1560 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX200N65B3 | IXYS | IXYX200N65B3 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX200N65B3 | IXYS | IGBT Transistors IGBT DISCRETE | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX220N65A5 | IXYS | Description: 650V, 220A, XPT Gen5 A5 IGBT in Packaging: Bulk Package / Case: TO-247-3 Variant Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 64ns/540ns Switching Energy: 1.3mJ (on), 7.95mJ (off) Test Condition: 300V, 100A, 1Ohm, 15V Gate Charge: 750 nC Current - Collector (Ic) (Max): 510 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 1.18 kA Power - Max: 1.61 kW | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX220N65A5 | IXYS | IGBTs 650V, 220A, XPT Gen5 A5 IGBT in PLUS247 | auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYX25N250CV1 | IXYS | IGBT Transistors 2500V/95A , HV XPT IGBT Copacked | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX25N250CV1 | IXYS | IXYX25N250CV1 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX25N250CV1 | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX25N250CV1HV | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX25N250CV1HV | IXYS | Description: IGBT 2500V 95A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 220 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 15ns/230ns Switching Energy: 8.3mJ (on), 7.3mJ (off) Test Condition: 1250V, 25A, 5Ohm, 15V Gate Charge: 147 nC Part Status: Active Current - Collector (Ic) (Max): 95 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 235 A Power - Max: 937 W | auf Bestellung 293 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYX25N250CV1HV | IXYS | IGBT Transistors 2500V/95A , HV XPT IGBT Copacked | auf Bestellung 712 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYX25N250CV1HV | IXYS | IXYX25N250CV1HV THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX300N65A3 | IXYS | Description: DISC IGBT XPT-GENX3 TO-247AD Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 125 ns Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 42ns/190ns Switching Energy: 7.8mJ (on), 4.7mJ (off) Test Condition: 400V, 100A, 1Ohm, 15V Gate Charge: 565 nC Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 1460 A Power - Max: 2300 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX300N65A3 | IXYS | IGBTs TO247 650V 300A IGBT | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX30N170CV1 | IXYS | IXYX30N170CV1 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX30N170CV1 | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX30N170CV1 | IXYS | Description: IGBT 1700V 108A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 160 ns Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 28ns/150ns Switching Energy: 5.9mJ (on), 3.3mJ (off) Test Condition: 850V, 30A, 2.7Ohm, 15V Gate Charge: 140 nC Part Status: Active Current - Collector (Ic) (Max): 108 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 255 A Power - Max: 937 W | auf Bestellung 1220 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYX30N170CV1 | IXYS | IGBTs 1700V/108A High Voltage XPT IGBT | auf Bestellung 551 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYX40N250CHV | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 1.5kW; TO247HV Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 2.5kV Collector current: 40A Power dissipation: 1.5kW Case: TO247HV Gate-emitter voltage: ±20V Pulsed collector current: 380A Mounting: THT Gate charge: 0.27µC Kind of package: tube Turn-on time: 43ns Turn-off time: 505ns Features of semiconductor devices: high voltage Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX40N250CHV | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 1.5kW; TO247HV Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 2.5kV Collector current: 40A Power dissipation: 1.5kW Case: TO247HV Gate-emitter voltage: ±20V Pulsed collector current: 380A Mounting: THT Gate charge: 0.27µC Kind of package: tube Turn-on time: 43ns Turn-off time: 505ns Features of semiconductor devices: high voltage | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX40N250CHV | IXYS | Description: IGBT 2.5KV 70A TO247HV Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A Supplier Device Package: TO-247PLUS-HV Td (on/off) @ 25°C: 21ns/200ns Switching Energy: 11.7mJ (on), 6.9mJ (off) Test Condition: 1250V, 40A, 1Ohm, 15V Gate Charge: 270 nC Part Status: Active Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 380 A Power - Max: 1500 W | auf Bestellung 262 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYX40N250CHV | IXYS | IGBTs TO247 2500V 40A IGBT | auf Bestellung 348 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYX40N450HV | IXYS | Description: IGBT 4500V 95A TO247PLUS-HV Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A Supplier Device Package: TO-247PLUS-HV Td (on/off) @ 25°C: 36ns/110ns Test Condition: 960V, 40A, 2Ohm, 15V Gate Charge: 170 nC Part Status: Active Current - Collector (Ic) (Max): 95 A Voltage - Collector Emitter Breakdown (Max): 4500 V Current - Collector Pulsed (Icm): 350 A Power - Max: 660 W | auf Bestellung 210 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYX40N450HV | IXYS | IGBT Transistors High Voltage XPT IGBT | auf Bestellung 1170 Stücke: Lieferzeit 381-385 Tag (e) |
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| IXYX40N450HV | LITTELFUSE | Description: LITTELFUSE - IXYX40N450HV - TRANSISTOR, IGBT/4.5KV/95A/TO-247PLUS-HV tariffCode: 85412900 Transistormontage: Through Hole rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 3.2V usEccn: EAR99 euEccn: NLR Verlustleistung: 660W Bauform - Transistor: TO-247PLUS-HV Anzahl der Pins: 3Pin(s) Produktpalette: XPT Series Kollektor-Emitter-Spannung, max.: 4.5kV productTraceability: No Betriebstemperatur, max.: 150°C directShipCharge: 25 Kontinuierlicher Kollektorstrom: 95A SVHC: No SVHC (17-Dec-2014) | auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYX40N450HV | Littelfuse | Trans IGBT Chip N-CH 4500V 95A 660mW 3-Pin(3+Tab) TO-247PLUS-HV | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX40N450HV | IXYS | IXYX40N450HV THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX50N170C | IXYS | IXYX50N170C THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||
| IXYX50N170C | IXYS | Description: IGBT 1700V 178A PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 44 ns Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 20ns/180ns Switching Energy: 8.7mJ (on), 5.6mJ (off) Test Condition: 850V, 50A, 1Ohm, 15V Gate Charge: 260 nC Part Status: Active Current - Collector (Ic) (Max): 178 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 460 A Power - Max: 1500 W | auf Bestellung 601 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYX50N170C | IXYS | IGBTs PLUS247 1700V 50A XPT | auf Bestellung 91 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYX50N170C | LITTELFUSE | Description: LITTELFUSE - IXYX50N170C - IGBT, 178 A, 2.8 V, 1.5 kW, 1.7 kV, PLUS247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.8 MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 1.5 Bauform - Transistor: PLUS247 Anzahl der Pins: 3 Produktpalette: ARCA IEC Series Kollektor-Emitter-Spannung, max.: 1.7 productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175 Kontinuierlicher Kollektorstrom: 178 SVHC: No SVHC (17-Jan-2022) | auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IXYX50N170C | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||
| IXYY8N90C3 | IXYS | Description: IGBT 900V 20A TO-252AA Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A Supplier Device Package: TO-252AA Td (on/off) @ 25°C: 16ns/40ns Switching Energy: 460µJ (on), 180µJ (off) Test Condition: 450V, 8A, 30Ohm, 15V Gate Charge: 13.3 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 48 A Power - Max: 125 W | auf Bestellung 547 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYY8N90C3 | IXYS | IGBTs 900V 8A 2.5V XPT IGBTs GenX3 | auf Bestellung 335 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYY8N90C3 | Littelfuse | Trans IGBT Chip N-CH 900V 20A 125000mW 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||
| IXYY8N90C3 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 125W Case: TO252 Mounting: SMD Gate charge: 13.3nC Kind of package: tube Collector-emitter voltage: 900V Collector current: 8A Pulsed collector current: 48A Turn-on time: 39ns Turn-off time: 238ns Gate-emitter voltage: ±20V | auf Bestellung 308 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXYY8N90C3 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 125W Case: TO252 Mounting: SMD Gate charge: 13.3nC Kind of package: tube Collector-emitter voltage: 900V Collector current: 8A Pulsed collector current: 48A Turn-on time: 39ns Turn-off time: 238ns Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | auf Bestellung 308 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXYY8N90C3-TRL | Littelfuse | Trans IGBT Chip N-CH 900V 20A 125W 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| IXYY8N90C3-TRL | IXYS | Description: IXYY8N90C3 TRL Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 20 ns Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A Supplier Device Package: TO-252AA IGBT Type: PT Td (on/off) @ 25°C: 16ns/40ns Switching Energy: 460µJ (on), 180µJ (off) Test Condition: 450V, 8A, 30Ohm, 15V Gate Charge: 13.3 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 48 A Power - Max: 125 W | Produkt ist nicht verfügbar | |||||||||||||||
| IXYY8N90C3-TRL | IXYS | IGBTs IXYY8N90C3 TRL | Produkt ist nicht verfügbar |