auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 28.21 EUR |
| 10+ | 24.64 EUR |
| 30+ | 21.56 EUR |
| 60+ | 20.72 EUR |
| 120+ | 15.26 EUR |
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Technische Details IXYH75N65C3H1 IXYS
Description: IGBT PT 650V 170A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 150 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A, Supplier Device Package: TO-247 (IXTH), IGBT Type: PT, Td (on/off) @ 25°C: 27ns/93ns, Switching Energy: 2.8mJ (on), 1mJ (off), Test Condition: 400V, 60A, 3Ohm, 15V, Gate Charge: 123 nC, Part Status: Active, Current - Collector (Ic) (Max): 170 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 360 A, Power - Max: 750 W.
Weitere Produktangebote IXYH75N65C3H1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IXYH75N65C3H1 | Hersteller : Littelfuse |
 Trans IGBT Chip N-CH 650V 170A 750000mW 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXYH75N65C3H1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 750W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 123nC Kind of package: tube Turn-on time: 90ns Turn-off time: 179ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXYH75N65C3H1 | Hersteller : IXYS |
Description: IGBT PT 650V 170A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 150 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 27ns/93ns Switching Energy: 2.8mJ (on), 1mJ (off) Test Condition: 400V, 60A, 3Ohm, 15V Gate Charge: 123 nC Part Status: Active Current - Collector (Ic) (Max): 170 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 360 A Power - Max: 750 W |
Produkt ist nicht verfügbar |
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IXYH75N65C3H1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 750W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 123nC Kind of package: tube Turn-on time: 90ns Turn-off time: 179ns |
Produkt ist nicht verfügbar |