Produkte > BUK
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
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BUK100-50 | auf Bestellung 3500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK100-50GL | PHILIPS | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK100-50GL | NXP Semiconductors | MOSFET RAIL TOPFET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK100-50GL,127 | NXP Semiconductors | Trans MOSFET N-CH 50V 13.5A Automotive 3-Pin(3+Tab) TO-220AB Rail | Produkt ist nicht verfügbar | |||||||||||||||||
BUK100-50GL,127 | Nexperia | Nexperia RAIL TOPFET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK100-50GL,127 | NXP USA Inc. | Description: IC PWR DRIVER N-CHAN 1:1 TO220AB Packaging: Tube Package / Case: TO-220-3 Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 85mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 13.5A Ratio - Input:Output: 1:1 Supplier Device Package: TO-220AB Fault Protection: Over Temperature, Over Voltage Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
BUK10050DL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK10050GL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK10050GS | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK101-0GL | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK101-50 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK101-50DL | auf Bestellung 2178 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK101-50DL(Transistor) Produktcode: 72810 | Philips | Transistoren > MOSFET N-CH Gehäuse: TO-220AB Uds,V: 50 V Idd,A: 26 A Rds(on), Ohm: 60 mOhm JHGF: THT | Produkt ist nicht verfügbar | |||||||||||||||||
BUK101-50GL | PHILIPS | 08+ QFN | auf Bestellung 400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK101-50GL,127 Produktcode: 156150 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
BUK101-50GL,127 | NXP Semiconductors | Trans MOSFET N-CH 50V 26A Automotive 3-Pin(3+Tab) TO-220AB Rail | Produkt ist nicht verfügbar | |||||||||||||||||
BUK101-50GL,127 | NXP USA Inc. | Description: IC PWR TOPFET LOGIC LVL TO220AB Packaging: Tube Package / Case: TO-220-3 Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 45mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 26A Ratio - Input:Output: 1:1 Supplier Device Package: TO-220AB Fault Protection: Over Temperature, Over Voltage | Produkt ist nicht verfügbar | |||||||||||||||||
BUK101-50GS | auf Bestellung 945 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK101-50GS,127 | NXP USA Inc. | Description: IC PWR DRIVER N-CHAN 1:1 TO220AB Packaging: Tube Package / Case: TO-220-3 Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 35mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 29A Ratio - Input:Output: 1:1 Supplier Device Package: TO-220AB Fault Protection: Over Temperature, Over Voltage | Produkt ist nicht verfügbar | |||||||||||||||||
BUK101050GS | TO220/ | auf Bestellung 211 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK10150 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK10150DL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK10150GL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK10150GS | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK102-50 | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK10250DL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK10250GL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK10250GS | PHILIPS | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK104-50L | auf Bestellung 3980 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK104-50L Produktcode: 51395 | IC > IC E-Key (Zugriffsschlüssel), Analogmultiplexer | Produkt ist nicht verfügbar | ||||||||||||||||||
BUK10450L | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK10450LP | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK10450S | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK10450SP | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK106 | PHI | 00+ | auf Bestellung 144 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK106-50L Produktcode: 101824 | IC > IC E-Key (Zugriffsschlüssel), Analogmultiplexer | Produkt ist nicht verfügbar | ||||||||||||||||||
BUK106-50L,127 | NXP Semiconductors | SOT263 LS TOPFET SOT2 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK10650L | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK10650LP | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK10650S | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK10650SP | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK107-50DL | Philips | Транз. Пол. БМ N-MOSFET SOT223 Udss=50V; Id=0,7A; Pdmax=1,8W; Rds=0,2 Ohm | auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK107-50DL | PHILIPS | 09+ | auf Bestellung 1018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK107-50DL,115 | NXP Semiconductors | Description: TOPFET LOGIC LVL 50V SOT-223 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK10750DL | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK10750DS | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK10750GL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK108-500L | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK108-50DL | PH | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK108-50DL | PHILIPS | TO-263 | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK108-50DL /T3 | NXP Semiconductors | MOSFET TAPE13 TOPFET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK108-50DL,118 | NXP Semiconductors | MOSFET TAPE13 TOPFET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK108-50DL,118 | NXP USA Inc. | Description: IC PWR DRIVER N-CHAN 1:1 D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 85mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 13.5A Ratio - Input:Output: 1:1 Supplier Device Package: D2PAK Fault Protection: Over Temperature, Over Voltage | Produkt ist nicht verfügbar | |||||||||||||||||
BUK10850DL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK10850GL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK10850GS | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK109-50 | auf Bestellung 300000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK109-500D | PHILIPS | auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK109-500L | auf Bestellung 620 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK109-50DL | auf Bestellung 2900 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK109-50DL,118 | NXP Semiconductors | MOSFET TAPE13 TOPFET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK109-50DL,118 | NXP USA Inc. | Description: IC PWR DRIVER N-CHAN 1:1 D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
BUK109-50DL/T3 | NXP Semiconductors | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK109-55 | auf Bestellung 200000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK10950DL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK10950GL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK10950GS | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK110-50GL | PHILIPS | TO-263 | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK110-50GL /T3 | NXP Semiconductors | MOSFET TAPE13 TOPFET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK110-50GL,118 | NXP Semiconductors | MOSFET TAPE13 TOPFET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK110-50GL,118 | NXP USA Inc. | Description: IC PWR DRIVER N-CHAN 1:1 D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 30mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 45A Ratio - Input:Output: 1:1 Supplier Device Package: D2PAK Fault Protection: Over Temperature, Over Voltage Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
BUK11050DL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK11050GL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK11050GS | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK11150GL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK11250GL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK11350DL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK114-50L Produktcode: 46243 | IC > IC Netzteile | Produkt ist nicht verfügbar | ||||||||||||||||||
BUK114-50L | PH | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK114-50L,118 | NXP USA Inc. | Description: IC PWR DRIVER N-CHAN 1:1 SOT426 Features: Status Flag Packaging: Tape & Reel (TR) Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 75mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): 5V Current - Output (Max): 15A Ratio - Input:Output: 1:1 Supplier Device Package: D2PAK Fault Protection: Over Temperature, Over Voltage | Produkt ist nicht verfügbar | |||||||||||||||||
BUK11450L | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK11450S | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK116-50L | PHI | SOT263 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK116-50L,118 | NXP USA Inc. | Description: IC PWR DRIVER N-CHAN 1:1 SOT426 Packaging: Tape & Reel (TR) Features: Status Flag Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 22mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): 5V Current - Output (Max): 50A Ratio - Input:Output: 1:1 Supplier Device Package: D2PAK Fault Protection: Over Temperature, Over Voltage | Produkt ist nicht verfügbar | |||||||||||||||||
BUK11650L | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK11650S | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK117-50DL | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK117-50DL,127 | NXP Semiconductors | Description: MOSFET N-CH 50V 12A TO220AB | Produkt ist nicht verfügbar | |||||||||||||||||
BUK11750DL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK118-50DL | PH | auf Bestellung 8800 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK118-50DL,127 | NXP USA Inc. | Description: IC PWR DRIVER N-CHAN 1:1 TO220AB Packaging: Tube Package / Case: TO-220-3 Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 36mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 16A Ratio - Input:Output: 1:1 Supplier Device Package: TO-220AB Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage | Produkt ist nicht verfügbar | |||||||||||||||||
BUK118-50DL,127 | NXP Semiconductors | Trans MOSFET N-CH 50V 16A Automotive 3-Pin(3+Tab) SOT-78B Rail | Produkt ist nicht verfügbar | |||||||||||||||||
BUK11850DL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK119-50DL | auf Bestellung 1450 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK119-50DL,127 | NXP Semiconductors | Description: MOSFET N-CH 50V 43A TO220AB | Produkt ist nicht verfügbar | |||||||||||||||||
BUK11950DL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK124-50L | NXP Semiconductors | MOSFET RAIL TOPFET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK124-50L Produktcode: 46271 | IC > IC Netzteile | Produkt ist nicht verfügbar | ||||||||||||||||||
BUK124-50L,127 | NXP USA Inc. | Description: IC PWR DRVR N-CH 1:1 SOT263B-01 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK12450L | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK125-50L | auf Bestellung 600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK125-50L,127 | NXP USA Inc. | Description: IC PWR DRVR N-CH 1:1 SOT263B-01 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK12550L | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK127-50DL,115 | NXP USA Inc. | Description: IC PWR DRIVER N-CHAN 1:1 SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 150mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 700mA Ratio - Input:Output: 1:1 Supplier Device Package: SC-73 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage | Produkt ist nicht verfügbar | |||||||||||||||||
BUK127-50GT,115 | NXP USA Inc. | Description: IC PWR DRIVER N-CHAN 1:1 SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 150mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.1A Ratio - Input:Output: 1:1 Supplier Device Package: SC-73 Fault Protection: Over Temperature, Over Voltage Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
BUK127-50GT,115 | NEXPERIA | Trans MOSFET N-CH 50V 2.1A Automotive 4-Pin(3+Tab) SC-73 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK127-50GT/127GT | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK12750DL | auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK12750GT | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK128-50DL | PHILIPS | TO-263 | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK128-50DL,118 | NXP USA Inc. | Description: IC PWR DRIVER N-CHAN 1:1 D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
BUK128-50DL/C1,118 | NXP Semiconductors | NXP Semiconductors | Produkt ist nicht verfügbar | |||||||||||||||||
BUK12850DL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK129-50DL Produktcode: 32499 | Philips | IC > IC E-Key (Zugriffsschlüssel), Analogmultiplexer Gehäuse: SOT-404 Beschreibung: Logic level TOPFET SMD version Spannung: 50V Temperaturbereich: -55...+150°C | Produkt ist nicht verfügbar | |||||||||||||||||
BUK129-50DL | PHILIPS | TO-263 | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK129-50DL,118 | NXP Semiconductors | Trans MOSFET N-CH 50V 16A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK129-50DL,118 | NXP USA Inc. | Description: IC PWR DRIVER N-CHAN 1:1 D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 36mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 16A Ratio - Input:Output: 1:1 Supplier Device Package: D2PAK Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage | Produkt ist nicht verfügbar | |||||||||||||||||
BUK129-50DL/C1,118 | NXP Semiconductors | NXP Semiconductors | Produkt ist nicht verfügbar | |||||||||||||||||
BUK12950DL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK130-50DL | PHILIPS | TO-263 | auf Bestellung 540 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK130-50DL,118 | NXP Semiconductors | Description: MOSFET N-CH 50V 20A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
BUK13050DL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK135-50L | PHILIPS | 07PB | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK135-50L | PHILIPS | 09+ | auf Bestellung 818 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK135-50L,118 | NXP Semiconductors | Description: TOPFET LOGIC LVL 50V D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
BUK13550L | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK136-50L,118 | NXP USA Inc. | Description: TOPFET LOGIC LVL 50V D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
BUK13650L | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK138-50DL | PH | auf Bestellung 8800 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK138-50DL | NXP | TO252 | auf Bestellung 2425 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK138-50DL Produktcode: 118486 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
BUK138-50DL,118 | NXP Semiconductors | Trans MOSFET N-CH 50V 8A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK138-50DL,118 | NXP USA Inc. | Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 68mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: DPAK Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
BUK138-50DL/C1,118 | NXP Semiconductors | MOSFET TransMOSFET N-CH 50V 8A 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
BUK138-50DL/C1,118 | NXP USA Inc. | Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 68mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: DPAK Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
BUK13850DL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK139-50DL | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK139-50DL,118 | NXP Semiconductors | Trans MOSFET N-CH 50V 16A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK139-50DL,118 | NXP USA Inc. | Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 36mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 16A Ratio - Input:Output: 1:1 Supplier Device Package: DPAK Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
BUK139-50DL/C1,118 | NXP USA Inc. | Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 36mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 16A Ratio - Input:Output: 1:1 Supplier Device Package: DPAK Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
BUK139-50DL/C1,118 | NXP Semiconductors | MOSFET TransMOSFET N-CH 50V 16A 3-Pin(2+Tab)DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
BUK13950DL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK148-50DL,127 | NXP USA Inc. | Description: IC PWR DRIVER N-CHAN 1:1 I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 68mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: I2PAK Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
BUK14850DL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK149-50DL,127 | NXP USA Inc. | Description: IC PWR DRIVER N-CHAN 1:1 I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 36mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 16A Ratio - Input:Output: 1:1 Supplier Device Package: I2PAK Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
BUK14950DL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK150-50DL,127 | NXP USA Inc. | Description: IC PWR DRIVER N-CHAN 1:1 I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 22mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 20A Ratio - Input:Output: 1:1 Supplier Device Package: I2PAK Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
BUK15050DL | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK1M10050SGTD | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK1M200-50SDLD | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK1M200-50SDLD,11 | NXP USA Inc. | Description: IC PWR DRIVER N-CHANNEL 1:1 20SO Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 150mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 800mA Ratio - Input:Output: 1:1 Supplier Device Package: 20-SO Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage | Produkt ist nicht verfügbar | |||||||||||||||||
BUK1M200-50SDLD,11 | NXP Semiconductors | Trans MOSFET N-CH 50V 20-Pin SO T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK1M200-50SDLD,51 | NXP USA Inc. | Description: IC PWR DRIVER N-CHANNEL 1:1 20SO Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 150mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 800mA Ratio - Input:Output: 1:1 Supplier Device Package: 20-SO Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage | Produkt ist nicht verfügbar | |||||||||||||||||
BUK1M200-50SDLDT/R | NXP Semiconductors | MOSFET TOPFET MULTICHAN FET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK1M200-50SGTD,11 | NXP USA Inc. | Description: IC PWR DRIVER N-CHANNEL 1:1 20SO Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 150mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.7A Ratio - Input:Output: 1:1 Supplier Device Package: 20-SO Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage | Produkt ist nicht verfügbar | |||||||||||||||||
BUK1M200-50SGTD,51 | NXP USA Inc. | Description: IC PWR DRIVER N-CHANNEL 1:1 20SO Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 150mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.7A Ratio - Input:Output: 1:1 Supplier Device Package: 20-SO Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage | Produkt ist nicht verfügbar | |||||||||||||||||
BUK1M20050SDLD | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK1M20050SGTD | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK20050X | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK20050Y | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK20150X | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK20150Y | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK202-50Y | auf Bestellung 525 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK202-50Y Produktcode: 143478 | IC > IC andere | Produkt ist nicht verfügbar | ||||||||||||||||||
BUK202-50Y | NXP Semiconductors | Power Switch ICs - Power Distribution RAIL TOPFET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK202-50Y,127 | NXP USA Inc. | Description: IC PWR SWITCH N-CH 1:1 SOT263B Features: Status Flag Packaging: Tube Package / Case: TO-220-5 Formed Leads Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: High Side Rds On (Typ): 28mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 20A Ratio - Input:Output: 1:1 Supplier Device Package: SOT263B-01 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO | Produkt ist nicht verfügbar | |||||||||||||||||
BUK202-50Y,127 | NXP Semiconductors | Smart High-Side Current Switch | Produkt ist nicht verfügbar | |||||||||||||||||
BUK202-50Y,127 | Nexperia | Power Switch ICs - Power Distribution TOPFET HIGH SIDE SW | Produkt ist nicht verfügbar | |||||||||||||||||
BUK202-50Y/B | NXP Semiconductors | High-Side Current Switch | Produkt ist nicht verfügbar | |||||||||||||||||
BUK20250 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK20250X | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK20250Y | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK20350X | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK20350Y | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK204-50Y /T3 | NXP Semiconductors | Power Switch ICs - Power Distribution TAPE13 TOPFET2 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK204-50Y,118 | NXP USA Inc. | Description: IC PWR SWITCH N-CHAN 1:1 SOT426 Features: Status Flag Packaging: Tape & Reel (TR) Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: High Side Rds On (Typ): 77mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 40V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.5A Ratio - Input:Output: 1:1 Supplier Device Package: D2PAK Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO | Produkt ist nicht verfügbar | |||||||||||||||||
BUK20450X | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK20450Y | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK205-50Y | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK205-50Y,118 | NXP USA Inc. | Description: IC PWR SWITCH N-CHAN 1:1 SOT426 Features: Status Flag Packaging: Tape & Reel (TR) Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: High Side Rds On (Typ): 45mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 40V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 6A Ratio - Input:Output: 1:1 Supplier Device Package: D2PAK Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO | Produkt ist nicht verfügbar | |||||||||||||||||
BUK20550X | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK20550Y | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK206 | PHI | 00+ | auf Bestellung 102 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK20650 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK20650X | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK20650Y | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK20750X | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK20750Y | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK208-50Y | auf Bestellung 1110 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK208-50Y,127 | NXP USA Inc. | Description: IC PWR DRVR N-CH 1:1 SOT263B-01 Packaging: Tube Package / Case: TO-220-5 Formed Leads Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: High Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 35V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 8.5A Ratio - Input:Output: 1:1 Supplier Device Package: SOT263B-01 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage | Produkt ist nicht verfügbar | |||||||||||||||||
BUK20850Y | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK209-50Y Produktcode: 139258 | IC > IC Netzteile | Produkt ist nicht verfügbar | ||||||||||||||||||
BUK209-50Y | PH | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK209-50Y | NXP Semiconductors | Power Switch ICs - Power Distribution TOPFET HIGH SIDE SW | Produkt ist nicht verfügbar | |||||||||||||||||
BUK209-50Y,127 | NXP Semiconductors | Power Switch ICs - Power Distribution TOPFET HIGH SIDE SW | Produkt ist nicht verfügbar | |||||||||||||||||
BUK209-50Y,127 | NXP USA Inc. | Description: IC PWR SWITCH N-CH 1:1 SOT263B Features: Status Flag Packaging: Tube Package / Case: TO-220-5 Formed Leads Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: High Side Rds On (Typ): 45mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 35V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 6A Ratio - Input:Output: 1:1 Supplier Device Package: SOT263B-01 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
BUK20950Y | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK210-50A | auf Bestellung 1150 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK210-50Y | PH | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK210-50Y,127 | NXP USA Inc. | Description: IC PWR DRVR N-CH 1:1 SOT263B-01 Packaging: Tube Features: Status Flag Package / Case: TO-220-5 Formed Leads Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: High Side Rds On (Typ): 28mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 35V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 9A Ratio - Input:Output: 1:1 Supplier Device Package: SOT263B-01 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage | Produkt ist nicht verfügbar | |||||||||||||||||
BUK210-50Y,127 Produktcode: 84224 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
BUK210-50Y,127 | NXP Semiconductors | High Side Current Limit Switch | Produkt ist nicht verfügbar | |||||||||||||||||
BUK21050Y | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK2114-50SYTS /T3 | NXP Semiconductors | Gate Drivers TOPFET HIGH SIDE FET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK2114-50SYTS,118 | NXP Semiconductors | High Side Switch | Produkt ist nicht verfügbar | |||||||||||||||||
BUK2114-50SYTS,118 | NXP Semiconductors | Gate Drivers TOPFET HIGH SIDE FET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK2114-50SYTS,118 | NXP USA Inc. | Description: IC PWR TOPFET HI SIDE SW SOT426 Packaging: Tape & Reel (TR) Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Mounting Type: Surface Mount Number of Outputs: 1 Output Configuration: High Side Rds On (Typ): 14mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 35V Current - Output (Max): 3A Supplier Device Package: D2PAK Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
BUK212-50Y | PH | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK212-50Y,127 | NXP USA Inc. | Description: IC PWR DRVR N-CH 1:1 SOT263B-01 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK21250Y | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK213 | TO-263-5 | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK213-50Y | NXP | 08+ SMD | auf Bestellung 323 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK213-50Y | PHILIPS | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK213-50Y | PH | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK213-50Y /T3 | NXP Semiconductors | Power Switch ICs - Power Distribution TAPE13 TOPFET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK213-50Y,118 | NXP USA Inc. | Description: IC PWR DRIVER N-CHAN 1:1 SOT426 Packaging: Tape & Reel (TR) Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: High Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 35V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 8.5A Ratio - Input:Output: 1:1 Supplier Device Package: D2PAK Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage | Produkt ist nicht verfügbar | |||||||||||||||||
BUK213-50Y,118 | NXP Semiconductors | Power Switch ICs - Power Distribution TAPE13 TOPFET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK213-50Y,118 | NXP Semiconductors | Single channel high-side with current limit function | Produkt ist nicht verfügbar | |||||||||||||||||
BUK214-50Y | PH | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK214-50Y,118 | NXP Semiconductors | High-Side Current Switch | Produkt ist nicht verfügbar | |||||||||||||||||
BUK214-50Y,118 | NXP USA Inc. | Description: IC PWR SWITCH N-CHAN 1:1 SOT426 Features: Status Flag Packaging: Tape & Reel (TR) Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: High Side Rds On (Typ): 45mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 35V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 6A Ratio - Input:Output: 1:1 Supplier Device Package: D2PAK Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
BUK21450Y | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK215 | TO-263 | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK215-50Y | PH | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK215-50Y,118 | NXP Semiconductors | High Side Switch with current limit function | Produkt ist nicht verfügbar | |||||||||||||||||
BUK215-50Y,118 | NXP USA Inc. | Description: IC PWR DRIVER N-CHAN 1:1 SOT426 Packaging: Tape & Reel (TR) Features: Status Flag Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: High Side Rds On (Typ): 28mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 35V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 9A Ratio - Input:Output: 1:1 Supplier Device Package: D2PAK Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage | Produkt ist nicht verfügbar | |||||||||||||||||
BUK215-50Y,118 Produktcode: 84226 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
BUK21550Y | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK21550YT | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK21650YT | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK217 | N/A | auf Bestellung 118 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK217-50Y | NXP | 09+ LQFP80 | auf Bestellung 2200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK217-50Y,118 | NXP Semiconductors | Description: MOSFET N-CH 50V 44A SOT426 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK217-50YT,118 | NXP Semiconductors | Description: MOSFET N-CH 50V 44A SOT426 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK21750Y | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK21750YT | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK218-50DC | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK218-50DC,118 | NXP Semiconductors | Dual High Side Switch | Produkt ist nicht verfügbar | |||||||||||||||||
BUK218-50DC,118 | NXP USA Inc. | Description: IC GATE DRVR HIGH-SIDE D2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5.5V ~ 35V Supplier Device Package: D2PAK-7 Channel Type: Independent Driven Configuration: High-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.2V, 3V Current - Peak Output (Source, Sink): 8A, 8A Part Status: Obsolete DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
BUK218-50DY | PH | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK218-50DY,118 | NXP Semiconductors | High Side Current Limit Switch | Produkt ist nicht verfügbar | |||||||||||||||||
BUK218-50DY,118 | NXP USA Inc. | Description: IC GATE DRVR HIGH-SIDE D2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5.5V ~ 35V Supplier Device Package: D2PAK-7 Channel Type: Independent Driven Configuration: High-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.2V, 3V Current - Peak Output (Source, Sink): 8A, 8A Part Status: Obsolete DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
BUK21850DC | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK21850DY | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK219-50Y | NXP Semiconductors | Power Switch ICs - Power Distribution RAIL TOPFET2 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK219-50Y | auf Bestellung 1312 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK219-50Y,127 | NXP USA Inc. | Description: IC PWR DRVR N-CH 1:1 SOT263B-01 Features: Status Flag Packaging: Tube Package / Case: TO-220-5 Formed Leads Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: High Side Rds On (Typ): 135mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 35V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: SOT263B-01 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage | Produkt ist nicht verfügbar | |||||||||||||||||
BUK219-50Y,127 | NXP Semiconductors | High Side Current Limit Switch | Produkt ist nicht verfügbar | |||||||||||||||||
BUK219-50Y,127 | NXP Semiconductors | Power Switch ICs - Power Distribution BUK219-50Y/SOT263/RAILH// | Produkt ist nicht verfügbar | |||||||||||||||||
BUK21950Y | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK220-50Y | PH | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK220-50Y,118 | NXP Semiconductors | High side switch with Load current limiting | Produkt ist nicht verfügbar | |||||||||||||||||
BUK220-50Y,118 | NXP USA Inc. | Description: IC PWR DRIVER N-CHAN 1:1 SOT426 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK22050Y | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK221-50DY | PH | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK221-50DY,118 | NXP USA Inc. | Description: IC PWR DRIVER N-CHAN 1:1 D2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 73mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 35V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4A Ratio - Input:Output: 1:1 Supplier Device Package: D2PAK-7 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
BUK22150DY | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK223-50Y | auf Bestellung 950 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK223-50Y,127 | NXP USA Inc. | Description: IC PWR DRVR N-CH 1:1 SOT263B-01 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK22350Y | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK224-50Y | NXP | auf Bestellung 4800 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK224-50Y Produktcode: 48743 | IC > IC E-Key (Zugriffsschlüssel), Analogmultiplexer | Produkt ist nicht verfügbar | ||||||||||||||||||
BUK224-50Y /T3 | NXP Semiconductors | Power Switch ICs - Power Distribution TAPE13 TOPFET2 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK224-50Y,118 | NXP Semiconductors | High side switch with Load current limiting | Produkt ist nicht verfügbar | |||||||||||||||||
BUK224-50Y,118 | NXP Semiconductors | Power Switch ICs - Power Distribution TAPE13 TOPFET2 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK224-50Y,118 | NXP USA Inc. | Description: IC PWR DRIVER N-CHAN 1:1 SOT426 Features: Status Flag Packaging: Tape & Reel (TR) Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: 150°C (TJ) Output Configuration: High Side Rds On (Typ): 22mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 35V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 12A Ratio - Input:Output: 1:1 Supplier Device Package: D2PAK Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
BUK22450Y | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK2914-50SYTS | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK2914-50SYTS,127 | NXP USA Inc. | Description: IC PWR TOPFET HI SIDE SOT263B-01 Packaging: Tape & Reel (TR) Package / Case: TO-220-5 Formed Leads Mounting Type: Through Hole Number of Outputs: 1 Output Configuration: High Side Rds On (Typ): 14mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 35V Current - Output (Max): 3A Supplier Device Package: SOT263B-01 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK3F00-50WDFE | NXP Semiconductors | Controller 5.5V to 52V 64-Pin PQFP | Produkt ist nicht verfügbar | |||||||||||||||||
BUK3F00-50WDFE,518 | Nexperia | Nexperia | Produkt ist nicht verfügbar | |||||||||||||||||
BUK3F00-50WDFE,518 | Nexperia USA Inc. | Description: IC 9675 AUTO 64QFP | Produkt ist nicht verfügbar | |||||||||||||||||
BUK3F00-50WDFM | PHILIPS | 06+ | auf Bestellung 165 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK3F00-50WDFM Produktcode: 105113 | NXP | IC > IC Interface | Produkt ist nicht verfügbar | |||||||||||||||||
BUK3F00-50WDFM | NXP | auf Bestellung 596 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK3F00-50WDFM,518 | Nexperia USA Inc. | Description: IC 9675 AUTO 64QFP Packaging: Tray Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
BUK3F00-50WDFM,518 | Nexperia | Nexperia | Produkt ist nicht verfügbar | |||||||||||||||||
BUK3F00-50WFEA | Nexperia | Nexperia | Produkt ist nicht verfügbar | |||||||||||||||||
BUK3F00-50WFEA,518 | Nexperia USA Inc. | Description: 9608 AUTO MULTI TECHNOLOGY AND I | Produkt ist nicht verfügbar | |||||||||||||||||
BUK3F00-50WGFA | Nexperia | Nexperia | Produkt ist nicht verfügbar | |||||||||||||||||
BUK3F00-50WGFA,518 | Nexperia USA Inc. | Description: 9608 AUTO MULTI TECHNOLOGY AND I | Produkt ist nicht verfügbar | |||||||||||||||||
BUK416-200AE | ST | auf Bestellung 19 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK416200AEBE | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK417-500AE | ST | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK417-500BE | ST | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK417500AEBE | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK4261000AB | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK426100AB | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK42650AB | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK42660A.B | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK426800AB | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK427400A | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK427400B | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK427450B | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK427500A | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK427500B | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK428500AB | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK428800AB | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK4361000AB | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK436100AB | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK436200A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK436200B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK43650AB | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK43660A | PHI | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK43660AB | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK436800A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK436800AB | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK436800B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK436W1000B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK436W200A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK436W200B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK436W800A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK436W800B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK437400A | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK437400B | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK437450B | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK437500A | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK437500B | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK4381000A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK4381000B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK438800A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK438800B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK438W800A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK438W800B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK441100AB | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK44160AB | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK442100A | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK442100B | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK44250A | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK44250B | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK444 Produktcode: 82500 | Philips | Transistoren > MOSFET N-CH Gehäuse: SOT-186 Uds,V: 200 Idd,A: 04.07.2015 Rds(on), Ohm: 0.35 Ciss, pF/Qg, nC: 700/ JHGF: THT | auf Bestellung 1 Stück: Lieferzeit 21-28 Tag (e) |
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BUK444 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK444-200A | auf Bestellung 20 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK444-200A,127 | NXP Semiconductors | NXP Semiconductors | Produkt ist nicht verfügbar | |||||||||||||||||
BUK444-200B | PH | 2002 TO-220 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK444-500A | TO-220 | auf Bestellung 155 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK444200 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK444200A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK444200B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK44460H | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK444800 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK444800A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK444800B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK445(500V) Produktcode: 72964 | Verschiedene Bauteile > Other components 3 | Produkt ist nicht verfügbar | ||||||||||||||||||
BUK445-100B | auf Bestellung 4500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK445-60A | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK445100A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK445200A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK445200B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK445400A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK445500A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK44550A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK445600A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK44560A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK44560ABH | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK446-800B Produktcode: 82710 | Philips | Transistoren > MOSFET N-CH Gehäuse: SOT-186 Uds,V: 800 Idd,A: 2 Rds(on), Ohm: 03.05.2015 Ciss, pF/Qg, nC: 1000/ JHGF: THT | Produkt ist nicht verfügbar | |||||||||||||||||
BUK4461000B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK446800A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK446800B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK451100A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK451100B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK452 | PH | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK452-100A | PH | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK452-100B | PHI | 9719+ | auf Bestellung 2975 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK452-60B | PHILIPS | auf Bestellung 1275 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK452100A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK452100B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK45260A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK45260B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK453-100B | PH | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK453-50B | PH | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK453-60B | PH | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK453100 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK453100A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK453100B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK45360 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK45360A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK45360B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK45360B Produktcode: 92529 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
BUK454-200A Produktcode: 139457 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
BUK454-200B | auf Bestellung 11450 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK454-60H | auf Bestellung 62500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK454-800A | auf Bestellung 2050 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK454200A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK454200B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK45460H | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK454800A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK454800B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK455 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK455-50B | auf Bestellung 14950 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK455-600B Produktcode: 11365 | Philips | Transistoren > MOSFET N-CH Gehäuse: TO-220AB Uds,V: 600 JHGF: THT | auf Bestellung 1 Stück: Lieferzeit 21-28 Tag (e) |
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BUK455100A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK455100B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK455200A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK455200B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK45550A | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK45550B | auf Bestellung 400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK45560A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK45560B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK45560H | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK456 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK456-1000B Produktcode: 83361 | Philips | Transistoren > MOSFET N-CH Uds,V: 1000 Idd,A: 3 Rds(on), Ohm: 5 Ciss, pF/Qg, nC: 1000/ | Produkt ist nicht verfügbar | |||||||||||||||||
BUK456-200 | PH | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK456-200B,127 | NXP Semiconductors | NXP Semiconductors | Produkt ist nicht verfügbar | |||||||||||||||||
BUK456-800A | auf Bestellung 2050 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
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BUK456100A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
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BUK456200 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK456200A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK456200B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK45650A | auf Bestellung 4500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
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BUK45660A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK45660B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK45660H | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK456800 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
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BUK456800B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK457400 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
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BUK462100A | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK462100B | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
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BUK46350A | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
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BUK46360A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK46360B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK464200A | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK464200B | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK464400A | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
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BUK464500A | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
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BUK46460H | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK465100A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK465200A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK46560A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK46560H | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK466100A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK466200A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK46660A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK472100A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK472100B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK47260A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK47260B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK473100A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK473100B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK47360A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK47360B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK474-200A | auf Bestellung 6500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK474200A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK474200B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK47460H | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK475100A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK475100B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK475200A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK475200B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK47560A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK47560B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK47560H | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK481-100 | PHILIPS | 05+ | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK481-100A | auf Bestellung 62500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK481-60A | PHILIPS | 96+ 223 | auf Bestellung 451 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK481100A | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK48160A | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK482-100A | auf Bestellung 37500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK482-60A | auf Bestellung 22500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK482100A | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK482200A | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK48260A | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK483-60A | PH | 09+ | auf Bestellung 5018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK48360A | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK4D110-20PX | Nexperia USA Inc. | Description: SMALL SIGNAL MOSFET FOR AUTOMOTI Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 6.7A (Tc) Rds On (Max) @ Id, Vgs: 96mOhm @ 3.4A, 8V Power Dissipation (Max): 2W (Ta), 7.5W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK4D110-20PX | NEXPERIA | Trans MOSFET P-CH 20V 3.4A 6-Pin DFN-MD EP | Produkt ist nicht verfügbar | |||||||||||||||||
BUK4D110-20PX | NEXPERIA | Description: NEXPERIA - BUK4D110-20PX - Leistungs-MOSFET, p-Kanal, 20 V, 6.7 A, 0.075 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 6.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 950mV euEccn: NLR Verlustleistung: 7.5W Bauform - Transistor: DFN2020MD Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 8V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.075ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK4D110-20PX | Nexperia | MOSFET BUK4D110-20P/SOT1220/SOT1220 | auf Bestellung 5886 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK4D110-20PX | Nexperia | Trans MOSFET P-CH 20V 3.4A Automotive AEC-Q101 6-Pin DFN-MD EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK4D110-20PX | NEXPERIA | Description: NEXPERIA - BUK4D110-20PX - Leistungs-MOSFET, p-Kanal, 20 V, 6.7 A, 0.075 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 6.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 7.5W Gate-Source-Schwellenspannung, max.: 950mV euEccn: NLR Verlustleistung: 7.5W Bauform - Transistor: DFN2020MD Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.075ohm Rds(on)-Prüfspannung: 8V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.075ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK4D122-20PX | Nexperia | MOSFET MOSFET BUK4D122-20P/SOT1220 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK4D16-20H | Nexperia | MOSFET MOSFET BUK4D16-20/SOT1220 | auf Bestellung 2700 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK4D16-20H | NEXPERIA | Description: NEXPERIA - BUK4D16-20H - Leistungs-MOSFET, n-Kanal, 20 V, 26 A, 0.013 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 26A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.3V euEccn: NLR Verlustleistung: 19W Bauform - Transistor: DFN2020MD Anzahl der Pins: 6Pin(s) Produktpalette: TrenchMOS Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.013ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2950 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK4D16-20H | Nexperia USA Inc. | Description: SMALL SIGNAL MOSFETS FOR AUTOMOT Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 8V Power Dissipation (Max): 2W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 931 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK4D16-20H | NEXPERIA | Description: NEXPERIA - BUK4D16-20H - Leistungs-MOSFET, n-Kanal, 20 V, 26 A, 0.013 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 26A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.3V euEccn: NLR Verlustleistung: 19W Bauform - Transistor: DFN2020MD Anzahl der Pins: 6Pin(s) Produktpalette: TrenchMOS Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.013ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2950 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK4D16-20H | Nexperia USA Inc. | Description: SMALL SIGNAL MOSFETS FOR AUTOMOT Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 8V Power Dissipation (Max): 2W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 931 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK4D16-20X | NEXPERIA | Description: NEXPERIA - BUK4D16-20X - Leistungs-MOSFET, n-Kanal, 20 V, 26 A, 0.011 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 26A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 950mV euEccn: NLR Verlustleistung: 19W Bauform - Transistor: DFN2020MD Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 8V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.011ohm | auf Bestellung 5945 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK4D16-20X | Nexperia | Trans MOSFET N-CH 20V 8.5A 6-Pin DFN-MD EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK4D16-20X | Nexperia | MOSFET BUK4D16-20/SOT1220/SOT1220 | auf Bestellung 3257 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK4D16-20X | NEXPERIA | Description: NEXPERIA - BUK4D16-20X - Leistungs-MOSFET, n-Kanal, 20 V, 26 A, 0.011 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 26A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 950mV euEccn: NLR Verlustleistung: 19W Bauform - Transistor: DFN2020MD Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 8V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.011ohm | auf Bestellung 5945 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK4D16-20X | NEXPERIA | Trans MOSFET N-CH 20V 8.5A 6-Pin DFN-MD EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK4D16-20X | Nexperia USA Inc. | Description: SMALL SIGNAL MOSFET FOR AUTOMOTI Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 8V Power Dissipation (Max): 2W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 931 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK4D38-20PH | Nexperia USA Inc. | Description: SMALL SIGNAL MOSFETS FOR AUTOMOT Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 8V Power Dissipation (Max): 2W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5730 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK4D38-20PH | Nexperia | MOSFET MOSFET BUK4D38-20P/SOT1220 | auf Bestellung 7310 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK4D38-20PH | Nexperia USA Inc. | Description: SMALL SIGNAL MOSFETS FOR AUTOMOT Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 8V Power Dissipation (Max): 2W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK4D38-20PH | NEXPERIA | Description: NEXPERIA - BUK4D38-20PH - Leistungs-MOSFET, p-Kanal, 20 V, 18 A, 0.03 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 2965 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK4D38-20PH | NEXPERIA | Description: NEXPERIA - BUK4D38-20PH - Leistungs-MOSFET, p-Kanal, 20 V, 18 A, 0.03 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 18A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.3V euEccn: NLR Verlustleistung: 19W Bauform - Transistor: DFN2020MD Anzahl der Pins: 6Pin(s) Produktpalette: TrenchMOS Series productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.03ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2965 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK4D38-20PX | NEXPERIA | Description: NEXPERIA - BUK4D38-20PX - Leistungs-MOSFET, p-Kanal, 20 V, 18 A, 0.026 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 18A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 19W Gate-Source-Schwellenspannung, max.: 950mV euEccn: NLR Verlustleistung: 19W Bauform - Transistor: DFN2020MD Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.026ohm Rds(on)-Prüfspannung: 8V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.026ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK4D38-20PX | NEXPERIA | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -72A; 19W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -11A Pulsed drain current: -72A Power dissipation: 19W Case: DFN6; SOT1220 Gate-source voltage: ±12V On-state resistance: 64mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||
BUK4D38-20PX | NEXPERIA | Trans MOSFET P-CH 20V 6A 6-Pin DFN-MD EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK4D38-20PX | NEXPERIA | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -72A; 19W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -11A Pulsed drain current: -72A Power dissipation: 19W Case: DFN6; SOT1220 Gate-source voltage: ±12V On-state resistance: 64mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BUK4D38-20PX | Nexperia USA Inc. | Description: SMALL SIGNAL MOSFET FOR AUTOMOTI Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 8V Power Dissipation (Max): 2W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK4D38-20PX | NEXPERIA | Description: NEXPERIA - BUK4D38-20PX - Leistungs-MOSFET, p-Kanal, 20 V, 18 A, 0.026 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 19W Kanaltyp: p-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.026ohm rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK4D38-20PX | Nexperia | MOSFETs BUK4D38-20P/SOT1220/SOT1220 | auf Bestellung 1794 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK4D50-30PX | Nexperia USA Inc. | Description: BUK4D50-30P/SOT1220/SOT1220 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V Power Dissipation (Max): 2.1W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 28 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK4D60-30X | NEXPERIA | Trans MOSFET N-CH 30V 4.2A 6-Pin DFN-MD EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK4D60-30X | NEXPERIA | Description: NEXPERIA - BUK4D60-30X - Leistungs-MOSFET, n-Kanal, 30 V, 8.3 A, 0.045 ohm, DFN2020MD, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 8.3 Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 7.5 Gate-Source-Schwellenspannung, max.: 900 Verlustleistung: 7.5 Bauform - Transistor: DFN2020MD Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.045 Rds(on)-Prüfspannung: 8 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.045 SVHC: No SVHC (10-Jun-2022) | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK4D60-30X | Nexperia | MOSFET BUK4D60-30/SOT1220/SOT1220 | auf Bestellung 10106 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK4D60-30X | Nexperia USA Inc. | Description: SMALL SIGNAL MOSFET FOR AUTOMOTI Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 8.3A (Tc) Rds On (Max) @ Id, Vgs: 57mOhm @ 4.2A, 8V Power Dissipation (Max): 2W (Ta), 7.5W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 296 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK4D60-30X | NEXPERIA | Description: NEXPERIA - BUK4D60-30X - Leistungs-MOSFET, n-Kanal, 30 V, 8.3 A, 0.045 ohm, DFN2020MD, Oberflächenmontage Verlustleistung: 7.5 Kanaltyp: n-Kanal Drain-Source-Durchgangswiderstand: 0.045 Qualifikation: AEC-Q101 SVHC: No SVHC (10-Jun-2022) | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK4D72-30X | Nexperia | MOSFET MOSFET BUK4D72-30/SOT1220 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK542100A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK542100B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK54260A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK54260B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK543100A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK543100B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK54350AB | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK54360A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK54360AB | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK54360B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK545100A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK545100AB | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK545100B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK545200A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK545200B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK54560A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK54560B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK54560H | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK552-100A | auf Bestellung 39732 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK552-60A | PHILIPS | 09+ | auf Bestellung 1018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK552-60A | PH | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK552100A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK552100B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK55260 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK55260A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK55260AB | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK55260B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK553-100A,127 | NXP Semiconductors | NXP Semiconductors | Produkt ist nicht verfügbar | |||||||||||||||||
BUK553100A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK553100B Produktcode: 143411 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
BUK553100B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK55348C | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK55350AB | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK55360A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK55360B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK554-200A | auf Bestellung 785 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK554200A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK554200B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK55460H | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK555 | PHI | 99+ TO-220 | auf Bestellung 184 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK555-100A Produktcode: 19244 | NXP | Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 100 Idd,A: 24 Rds(on), Ohm: 0.085 Bem.: Log. Steuerung JHGF: THT | Produkt ist nicht verfügbar | |||||||||||||||||
BUK555-100AQ | NXP Semiconductors | NXP Semiconductors | Produkt ist nicht verfügbar | |||||||||||||||||
BUK555-100B | auf Bestellung 27690 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK555-200B,127 | NXP Semiconductors | NXP Semiconductors | Produkt ist nicht verfügbar | |||||||||||||||||
BUK555-60A,127 | NXP Semiconductors | BUK555-60A,127^NXP | Produkt ist nicht verfügbar | |||||||||||||||||
BUK555-60B | auf Bestellung 3175 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK555100 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK555100A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK555100B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK555200 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK555200A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK555200B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK55550A | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK55550B | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK55560A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK55560B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK55560H | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK55660 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK55660A | auf Bestellung 7000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK55660AC | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK55660C | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK55660H | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK562100A | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK562100B | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK56250A | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK56250B | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK56260A | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK56260B | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK563-50A | auf Bestellung 750 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK563100A | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK563100B | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK56348C | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK56350A | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK56350B | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK56360A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK56380B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK564200A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK56460H | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK565-100A | auf Bestellung 2760 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK565-60A | auf Bestellung 3200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK565100A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK565200A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK56560A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK56560H | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK566-50A | auf Bestellung 775 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK56660A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK56660H | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK57348C | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK57360A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK57360B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK57460H | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK581-100A | PH | 09+ | auf Bestellung 10018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK581-60A | PHILIPS | SOT223 | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK581100A | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK58160A | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK582-100A | PH | 09+ | auf Bestellung 32518 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK582-100A | PHI | 2001 | auf Bestellung 3504 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK582-100A,115 | NXP Semiconductors | Trans MOSFET N-CH 100V 1.7A Automotive 4-Pin(3+Tab) SC-73 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK582100A | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK58260A | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK583-60A | PH | 09+ | auf Bestellung 5018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BUK58360A | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK617-500AE | ST | auf Bestellung 20 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK617-500AL | ST | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BUK6207-30C,118 | NXP USA Inc. | Description: MOSFET N-CH 30V 90A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6207-30C,118 | NXP USA Inc. | Description: MOSFET N-CH 30V 90A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6207-55C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 55V 90A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6207-55C,118 | Nexperia | MOSFET N-CHAN 55V 81A | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6207-55C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 55V 90A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6207-55C,118 | NEXPERIA | Trans MOSFET N-CH 55V 90A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6208-40C,118 | NXP USA Inc. | Description: MOSFET N-CH 40V 90A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6208-40C,118 | NXP USA Inc. | Description: MOSFET N-CH 40V 90A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6209-30C | NXP USA Inc. | Description: PFET, 50A I(D), 30V, 0.0192OHM, | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6209-30C | NXP Semiconductors | NXP Semiconductors | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6209-30C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 30V 50A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 12A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6209-30C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 30V 50A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 12A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6209-30C,118 | Nexperia | MOSFET N-CHAN 30V 50A | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6209-30C-NEX | Nexperia USA Inc. | Description: PFET, 50A I(D), 30V, 0.0192OHM, | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6210-55C,118 | Nexperia | MOSFET N-CHAN 55V 78A | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6210-55C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 55V 78A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6210-55C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 55V 78A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6211-75C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 75V 74A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6211-75C,118 | NEXPERIA | Trans MOSFET N-CH 75V 74A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6211-75C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 75V 74A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6211-75C,118 | Nexperia | MOSFET N-CHAN 75V 74A | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6212-40C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 40V 50A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 12A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 33.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6212-40C,118 | Nexperia | MOSFET N-CHAN 40V 50A | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6212-40C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 40V 50A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 12A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 33.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6212-40C,118 | NEXPERIA | Trans MOSFET N-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6212-40C,118-NEX | Rochester Electronics, LLC | Description: PFET, 50A I(D), 40V, 0.02OHM, 1- | auf Bestellung 55000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
BUK6213-30A,118 | NXP USA Inc. | Description: TRANSISTOR >30MHZ Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 102W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1986 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4990 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6213-30A,118 | NEXPERIA | Trans MOSFET N-CH 30V 64A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6213-30A,118 | Nexperia | MOSFET Trans MOSFET N-CH 30V 64A 3-Pin(2+Tab) | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6213-30C | Nexperia | Nexperia | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6213-30C | NXP Semiconductors | NXP Semiconductors | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6213-30C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 30V 47A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6213-30C,118 | NEXPERIA | Trans MOSFET N-CH 30V 47A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6213-30C,118 | NEXPERIA | Description: NEXPERIA - BUK6213-30C,118 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: Lead (23-Jan-2024) | auf Bestellung 144500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6213-30C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 30V 47A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6213-30C,118 | Nexperia | MOSFET N-CHAN 30V 47A | auf Bestellung 1990 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
BUK6213-30C,118-NEX | Nexperia USA Inc. | Description: PFET, 47A I(D), 30V, 0.029OHM, 1 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK621330A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK6215-75C,118 | Nexperia | MOSFET N-CHAN 75V 57A | auf Bestellung 5790 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
BUK6215-75C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 75V 57A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 61.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6215-75C,118 | NEXPERIA | Trans MOSFET N-CH 75V 57A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6215-75C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 75V 57A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 61.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6217-55C | Rochester Electronics, LLC | Description: PFET, 44A I(D), 55V, 0.0285OHM, | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
BUK6217-55C Produktcode: 179616 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
BUK6217-55C,118 | NEXPERIA | Trans MOSFET N-CH 55V 44A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6217-55C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 55V 44A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 12A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6217-55C,118 | Nexperia | MOSFET N-CHAN 55V 44A | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6218-40C | NXP USA Inc. | Description: PFET, 42A I(D), 40V, 0.028OHM, 1 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6218-40C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 40V 42A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 8627 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6218-40C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 40V 42A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6218-40C,118 | Nexperia | MOSFET N-CHAN 40V 42A | auf Bestellung 7467 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
BUK6218-40C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 40V 42A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6218-40C,118 | NEXPERIA | Trans MOSFET N-CH 40V 42A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6218-40C,118-NEX | Nexperia USA Inc. | Description: PFET, 42A I(D), 40V, 0.028OHM, 1 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6218-40C118 | Nexperia USA Inc. | Description: BUK6218-4240N-CHANNMOSFETO-252 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6226-75C | NXP Semiconductors | NXP Semiconductors | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6226-75C | Nexperia | Nexperia | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6226-75C,118 | Nexperia | MOSFET N-CHAN 75V 33A | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6226-75C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 75V 33A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6226-75C,118 | NEXPERIA | Trans MOSFET N-CH 75V 33A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6226-75C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 75V 33A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6228-55C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 55V 31A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6228-55C,118 | NEXPERIA | Trans MOSFET N-CH 55V 31A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6228-55C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 55V 31A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6228-55C,118 | Nexperia | MOSFET N-CHAN 55V 31A | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6240-75C,118 | NXP USA Inc. | Description: MOSFET N-CH 75V 22A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6240-75C,118 | NXP USA Inc. | Description: MOSFET N-CH 75V 22A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6246-75C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 75V 22A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 15031 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6246-75C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 75V 22A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6246-75C,118 | Nexperia | MOSFET N-Chan 75V 22A 60W | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6246-75C,118 | NEXPERIA | Trans MOSFET N-CH 75V 22A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK624R5-30C | Nexperia USA Inc. | Description: PFET, 90A I(D), 30V, 0.0075OHM, Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V Power Dissipation (Max): 158W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4707 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK624R5-30C,118 | Nexperia | MOSFET N-CHAN 30V 90A | Produkt ist nicht verfügbar | |||||||||||||||||
BUK624R5-30C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 30V 90A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4707 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK624R5-30C,118 | NEXPERIA | Trans MOSFET N-CH 30V 90A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK624R5-30C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 30V 90A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4707 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK625R0-40C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 40V 90A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK625R0-40C,118 | Nexperia | MOSFET N-CHAN 40V 90A | Produkt ist nicht verfügbar | |||||||||||||||||
BUK625R0-40C,118 | NEXPERIA | Trans MOSFET N-CH 40V 90A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK625R0-40C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 40V 90A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK625R0-40C,118-NXP | NXP USA Inc. | Description: MOSFET N-CH 40V 90A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V Power Dissipation (Max): 158W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Part Status: Active Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK625R2-30C | NXP Semiconductors | NXP Semiconductors | Produkt ist nicht verfügbar | |||||||||||||||||
BUK625R2-30C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 30V 90A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 36466 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK625R2-30C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 30V 90A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK625R2-30C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 30V 90A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK625R2-30C,118 | Nexperia | MOSFET N-Chan 30V 90A | Produkt ist nicht verfügbar | |||||||||||||||||
BUK626R2-40C | Nexperia | Nexperia | Produkt ist nicht verfügbar | |||||||||||||||||
BUK626R2-40C,118 | Nexperia | MOSFET N-Chan 30V 90A | auf Bestellung 1709 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
BUK626R2-40C,118 | NEXPERIA | Trans MOSFET N-CH 40V 90A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK626R2-40C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 40V 90A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6381000 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK6381000A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK6381000B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK638500AB | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK638500B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK638800 | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK638800A | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK638800AB | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK638800B | auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK6507-55C,127 | NEXPERIA | Trans MOSFET N-CH 55V 100A Automotive 3-Pin(3+Tab) TO-220AB Rail | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6507-55C,127 | NXP USA Inc. | Description: MOSFET N-CH 55V 100A TO220AB | auf Bestellung 4728 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6507-55C,127 | NXP USA Inc. | Description: MOSFET N-CH 55V 100A TO220AB | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6507-75C,127 | NEXPERIA | Trans MOSFET N-CH 75V 100A Automotive 3-Pin(3+Tab) TO-220AB Rail | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6507-75C,127 | Nexperia USA Inc. | Description: MOSFET N-CH 75V 100A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V Power Dissipation (Max): 204W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6510-75C,127 | NXP USA Inc. | Description: MOSFET N-CH 75V 77A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6510-75C,127 | NXP USA Inc. | Description: MOSFET N-CH 75V 77A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 25 V | auf Bestellung 4871 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK652R0-30C,127 | NXP Semiconductors | NXP Semiconductors | Produkt ist nicht verfügbar | |||||||||||||||||
BUK652R0-30C,127 | NXP USA Inc. | Description: MOSFET N-CH 30V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 229 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14964 pF @ 25 V | auf Bestellung 3183 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK652R0-30C,127 | Nexperia | MOSFET N-CHAN 30V 120A | Produkt ist nicht verfügbar | |||||||||||||||||
BUK652R1-30C,127 | NXP USA Inc. | Description: MOSFET N-CH 30V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10918 pF @ 25 V | auf Bestellung 5004 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK652R1-30C,127 | NXP Semiconductors | NXP Semiconductors | Produkt ist nicht verfügbar | |||||||||||||||||
BUK652R1-30C,127 | Nexperia | MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK652R3-40C,127 | Nexperia | MOSFET N-CHAN 40V 120A | Produkt ist nicht verfügbar | |||||||||||||||||
BUK652R3-40C,127 | NEXPERIA | Trans MOSFET N-CH 40V 120A Automotive 3-Pin(3+Tab) TO-220AB Rail | Produkt ist nicht verfügbar | |||||||||||||||||
BUK652R3-40C,127 | NXP Semiconductors | NXP Semiconductors | Produkt ist nicht verfügbar | |||||||||||||||||
BUK652R3-40C,127 | NXP USA Inc. | Description: MOSFET N-CH 40V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V | auf Bestellung 5171 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK652R6-40C,127 | Nexperia | MOSFET N-CHAN 40V 120A | Produkt ist nicht verfügbar | |||||||||||||||||
BUK652R6-40C,127 | NXP USA Inc. | Description: MOSFET N-CH 40V 120A TO220AB | auf Bestellung 3041 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK652R6-40C,127 | NXP Semiconductors | NXP Semiconductors | Produkt ist nicht verfügbar | |||||||||||||||||
BUK652R6-40C,127 | NXP USA Inc. | Description: MOSFET N-CH 40V 120A TO220AB | Produkt ist nicht verfügbar | |||||||||||||||||
BUK652R7-30C,127 | NXP Semiconductors | NXP Semiconductors | Produkt ist nicht verfügbar | |||||||||||||||||
BUK652R7-30C,127 | NXP USA Inc. | Description: MOSFET N-CH 30V 100A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V Power Dissipation (Max): 204W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6960 pF @ 25 V | auf Bestellung 4008 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK652R7-30C,127 | Nexperia | MOSFET N-CHAN 30V 100A | Produkt ist nicht verfügbar | |||||||||||||||||
BUK652R7-30C,127 | NXP USA Inc. | Description: MOSFET N-CH 30V 100A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V Power Dissipation (Max): 204W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6960 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK653R2-55C,127 | NXP USA Inc. | Description: MOSFET N-CH 55V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V | auf Bestellung 3726 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK653R2-55C,127 | NXP USA Inc. | Description: MOSFET N-CH 55V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK653R2-55C,127 | NEXPERIA | Trans MOSFET N-CH 55V 120A Automotive 3-Pin(3+Tab) TO-220AB Rail | Produkt ist nicht verfügbar | |||||||||||||||||
BUK653R3-30C,127 | Nexperia USA Inc. | Description: MOSFET N-CH 30V 100A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V Power Dissipation (Max): 204W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6960 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK653R4-40C,127 | NXP USA Inc. | Description: MOSFET N-CH 40V 100A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V Power Dissipation (Max): 204W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V | auf Bestellung 1309 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK653R4-40C,127 | NXP USA Inc. | Description: MOSFET N-CH 40V 100A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V Power Dissipation (Max): 204W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK653R5-55C | NXP USA Inc. | Description: N-CHANNEL POWER MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK653R5-55C,127 | NXP USA Inc. | Description: MOSFET N-CH 55V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11516 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK653R5-55C,127 | NXP USA Inc. | Description: MOSFET N-CH 55V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11516 pF @ 25 V | auf Bestellung 4931 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK653R7-30C,127 | NXP USA Inc. | Description: MOSFET N-CH 30V 100A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4707 pF @ 25 V | auf Bestellung 5180 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK654R0-75C,127 | NXP USA Inc. | Description: MOSFET N-CH 75V 120A TO220AB | auf Bestellung 3883 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK654R0-75C,127 | NEXPERIA | Trans MOSFET N-CH 75V 120A Automotive 3-Pin(3+Tab) TO-220AB Rail | Produkt ist nicht verfügbar | |||||||||||||||||
BUK654R0-75C,127 | NXP USA Inc. | Description: MOSFET N-CH 75V 120A TO220AB | Produkt ist nicht verfügbar | |||||||||||||||||
BUK654R6-55C,127 | NEXPERIA | Trans MOSFET N-CH 55V 100A Automotive 3-Pin(3+Tab) TO-220AB Rail | Produkt ist nicht verfügbar | |||||||||||||||||
BUK654R6-55C,127 | NXP USA Inc. | Description: MOSFET N-CH 55V 100A TO220AB | Produkt ist nicht verfügbar | |||||||||||||||||
BUK654R8-40C,127 | NXP USA Inc. | Description: MOSFET N-CH 40V 100A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-220AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 1963 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK655450B | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK655500A | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK655500ABC | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK655500B | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK655500C | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK655R0-75C,127 | NXP USA Inc. | Description: MOSFET N-CH 75V 120A TO220AB | Produkt ist nicht verfügbar | |||||||||||||||||
BUK657450B | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BUK6607-55C | Nexperia | Nexperia | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6607-55C,118 | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 420A; 158W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 74A Pulsed drain current: 420A Power dissipation: 158W Case: D2PAK; SOT404 Gate-source voltage: ±15V On-state resistance: 14.3mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6607-55C,118 | NEXPERIA | Description: NEXPERIA - BUK6607-55C,118 - Leistungs-MOSFET, n-Kanal, 55 V, 100 A, 0.0055 ohm, TO-263 (D2PAK), Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55 Dauer-Drainstrom Id: 100 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 158 Bauform - Transistor: TO-263 (D2PAK) Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3 Produktpalette: TrenchMOS Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0055 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 2.3 SVHC: No SVHC (17-Jan-2022) | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6607-55C,118 | Nexperia | Trans MOSFET N-CH 55V 100A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6607-55C,118 | Nexperia | MOSFET BUK6607-55C/SOT404/D2PAK | auf Bestellung 5091 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6607-55C,118 | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 420A; 158W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 74A Pulsed drain current: 420A Power dissipation: 158W Case: D2PAK; SOT404 Gate-source voltage: ±15V On-state resistance: 14.3mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level Application: automotive industry Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6607-55C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 55V 100A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 6149 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6607-55C,118 | NEXPERIA | Trans MOSFET N-CH 55V 100A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6607-55C,118 | NEXPERIA | Description: NEXPERIA - BUK6607-55C,118 - Leistungs-MOSFET, n-Kanal, 55 V, 100 A, 0.0055 ohm, TO-263 (D2PAK), Oberflächenmontage Verlustleistung: 158 Kanaltyp: n-Kanal Drain-Source-Durchgangswiderstand: 0.0055 Qualifikation: AEC-Q101 SVHC: No SVHC (10-Jun-2022) | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6607-55C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 55V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6607-75C,118 | NXP USA Inc. | Description: MOSFET N-CH 75V 100A D2PAK | auf Bestellung 804 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6607-75C,118 | Nexperia | MOSFET N-CHAN 75V 100A | auf Bestellung 4813 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
BUK6610-75C,118 | NEXPERIA | Trans MOSFET N-CH 75V 78A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6610-75C,118 | Nexperia | MOSFET N-CHAN 75V 78A | auf Bestellung 4596 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
BUK6610-75C,118 | Nexperia USA Inc. | Description: NEXPERIA BUK6610 - N-CHANNEL TRE Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 25 V | auf Bestellung 7474 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK661R6-30C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 30V 120A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
BUK661R6-30C,118 | NEXPERIA | Trans MOSFET N-CH 30V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK661R6-30C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 30V 120A D2PAK | auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
BUK661R6-30C118 | NXP USA Inc. | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 229 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14964 pF @ 25 V | auf Bestellung 2741 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK661R8-30C,118 | NXP USA Inc. | Description: MOSFET N-CH 30V 120A D2PAK Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10918 pF @ 25 V | auf Bestellung 1473 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK661R8-30C,118 | Nexperia | MOSFETs N-CHAN 30V 120A | Produkt ist nicht verfügbar | |||||||||||||||||
BUK661R9-40C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 40V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 1350 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK661R9-40C,118 | Nexperia | MOSFET N-CHAN 40V 120A | auf Bestellung 1092 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
BUK661R9-40C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 40V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK662R4-40C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 40V 120A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11334 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3832 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK662R4-40C,118 | Nexperia | MOSFET N-CHANNEL TRENCHMOS FET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK662R4-40C,118 | NEXPERIA | Trans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK662R4-40C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 40V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11334 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK662R4-40C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 40V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11334 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK662R5-30C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 30V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Power Dissipation (Max): 204W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6960 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK662R5-30C,118-NXP | NXP USA Inc. | Description: PFET, 100A I(D), 30V, 0.0048OHM, Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Power Dissipation (Max): 204W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6960 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK662R7-55C | NXP USA Inc. | Description: NOW NEXPERIA BUK662R7-55C - POWE Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
BUK662R7-55C,118 | NEXPERIA | Trans MOSFET N-CH 55V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK662R7-55C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 55V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK662R7-55C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 55V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK662R7-55C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 55V 120A D2PAK Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V | auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK662R7-55C,118 | Nexperia | MOSFET N-CHAN 55V 120A | Produkt ist nicht verfügbar | |||||||||||||||||
BUK663R2-40C,118 | Nexperia | MOSFET N-CHAN 40V 100A | Produkt ist nicht verfügbar | |||||||||||||||||
BUK663R2-40C,118 | Nexperia USA Inc. | Description: NEXPERIA BUK663R2-40C - 100A, 40 Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V Power Dissipation (Max): 204W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V | auf Bestellung 14413 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK663R5-30C,118 | NXP USA Inc. | Description: MOSFET N-CH 30V 100A D2PAK Packaging: Bulk | auf Bestellung 8739 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK663R5-30C,118 | Nexperia | MOSFET N-CHAN 30V 100A | Produkt ist nicht verfügbar | |||||||||||||||||
BUK663R5-55C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 55V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11516 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK663R5-55C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 55V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11516 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK663R5-55C,118 | NEXPERIA | Trans MOSFET N-CH 55V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK663R5-55C,118 | NXP USA Inc. | Description: MOSFET N-CH 55V 120A D2PAK Packaging: Bulk | auf Bestellung 1589 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK663R7-75C | Nexperia | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK663R7-75C,118 | NEXPERIA | Trans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK663R7-75C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 75V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15450 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK663R7-75C,118 | Nexperia | Trans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK663R7-75C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 75V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15450 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK664R4-55C Produktcode: 175664 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
BUK664R4-55C,118 | Nexperia | MOSFET N-CHAN 55V 100A | auf Bestellung 1136 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
BUK664R4-55C,118 | Nexperia USA Inc. | Description: NEXPERIA BUK664R4 - N-CHANNEL T Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 25A, 10V Power Dissipation (Max): 204W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7750 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK664R4-55C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 55V 100A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 25A, 10V Power Dissipation (Max): 204W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7750 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK664R4-55C,118 | NXP Semiconductors | Description: NEXPERIA BUK664R4 - N-CHANNEL T Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 25A, 10V Power Dissipation (Max): 204W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7750 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK664R4-55C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 55V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 25A, 10V Power Dissipation (Max): 204W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7750 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK664R6-40C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 40V 100A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5181 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK664R6-40C,118 | Nexperia | Trans MOSFET N-CH 40V 100A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK664R6-40C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 40V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK664R6-40C,118 | Nexperia | MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET | auf Bestellung 4796 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
BUK664R6-40C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 40V 100A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK664R8-75C,118 | Nexperia | MOSFET N-CHANNEL TRENCHMOS FET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK664R8-75C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 75V 120A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
BUK664R8-75C,118 | NXP USA Inc. | Description: MOSFET N-CH 75V 120A D2PAK | auf Bestellung 4672 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
BUK664R8-75C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 75V 120A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6C1R5-40C,118 | NXP Semiconductors | NXP Semiconductors | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6C2R1-55C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 55V 228A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 228A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK-7 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6C2R1-55C,118 | Nexperia | MOSFET N-chan TrenchMOS FET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6C2R1-55C,118 | Nexperia USA Inc. | Description: MOSFET N-CH 55V 228A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 228A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK-7 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6C2R1-55C,118-NX | NXP USA Inc. | Description: PFET, 228A I(D), 55V, 0.0037OHM, Packaging: Bulk Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 228A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6C3R3-75C,118 | Nexperia | MOSFET N-chan TrenchMOS FET | auf Bestellung 4545 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
BUK6C3R3-75C,118 | NXP Semiconductors | Description: NEXPERIA BUK6C3R3 - N-CHANNEL TR Packaging: Bulk Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 181A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15800 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 480 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D120-40EX | NEXPERIA | Description: NEXPERIA - BUK6D120-40EX - Leistungs-MOSFET, n-Kanal, 40 V, 5.7 A, 0.085 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 5.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 7.5W Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 7.5W Bauform - Transistor: DFN2020MD Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.085ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.085ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 10495 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D120-40EX | Nexperia USA Inc. | Description: MOSFET N-CH 40V 2.9A/5.7A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 5.7A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V Power Dissipation (Max): 2W (Ta), 7.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 113 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 32157 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D120-40EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; Idm: 23A; 7.5W Mounting: SMD Drain-source voltage: 40V Drain current: 3.6A On-state resistance: 233mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 7.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 3.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 23A Case: DFN6; SOT1220 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D120-40EX | Nexperia | MOSFET BUK6D120-40E/SOT1220/SOT1220 | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D120-40EX | NEXPERIA | 40 V, N-channel Trench MOSFET | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D120-40EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; Idm: 23A; 7.5W Mounting: SMD Drain-source voltage: 40V Drain current: 3.6A On-state resistance: 233mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 7.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 3.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 23A Case: DFN6; SOT1220 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D120-40EX | NEXPERIA | Description: NEXPERIA - BUK6D120-40EX - Leistungs-MOSFET, n-Kanal, 40 V, 5.7 A, 0.085 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 5.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 7.5W Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 7.5W Bauform - Transistor: DFN2020MD Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.085ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.085ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 10495 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D120-40EX | Nexperia USA Inc. | Description: MOSFET N-CH 40V 2.9A/5.7A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 5.7A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V Power Dissipation (Max): 2W (Ta), 7.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 113 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D120-40EX | Nexperia | 40 V, N-channel Trench MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D120-60P | Nexperia | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D120-60PX | NEXPERIA | Trans MOSFET P-CH 60V 3A Automotive 6-Pin DFN-MD EP T/R | auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D120-60PX | NXP | Tranzystor P-Channel MOSFET; 60V; +/-20V; 120mOhm; 8A; 15W; -55°C~175°C; Substitute: BUK6D120-60PX; BUK6D120-60PZ; BUK6D120-60PX TBUK6d120-60px Anzahl je Verpackung: 100 Stücke | auf Bestellung 290 Stücke: Lieferzeit 7-14 Tag (e) |
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BUK6D120-60PX | NEXPERIA | Description: NEXPERIA - BUK6D120-60PX - Leistungs-MOSFET, p-Kanal, 60 V, 8 A, 0.095 ohm, SOT-1220, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 15W Bauform - Transistor: SOT-1220 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.095ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 26892 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D120-60PX | Nexperia USA Inc. | Description: MOSFET P-CH 60V 3A/8A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V Power Dissipation (Max): 2.3W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D120-60PX | Nexperia | Trans MOSFET P-CH 60V 3A Automotive AEC-Q101 6-Pin DFN-MD EP T/R | auf Bestellung 3220 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK6D120-60PX | NEXPERIA | Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -5.1A; Idm: -32A; 15W Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.1A Pulsed drain current: -32A Power dissipation: 15W Case: DFN2020MD-6; SOT1220 On-state resistance: 256mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D120-60PX | Nexperia | Trans MOSFET P-CH 60V 3A Automotive AEC-Q101 6-Pin DFN-MD EP T/R | auf Bestellung 3220 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK6D120-60PX | NEXPERIA | Trans MOSFET P-CH 60V 3A Automotive 6-Pin DFN-MD EP T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D120-60PX | NEXPERIA | Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -5.1A; Idm: -32A; 15W Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.1A Pulsed drain current: -32A Power dissipation: 15W Case: DFN2020MD-6; SOT1220 On-state resistance: 256mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D120-60PX | Nexperia | Trans MOSFET P-CH 60V 3A Automotive AEC-Q101 6-Pin DFN-MD EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK6D120-60PX | NEXPERIA | Description: NEXPERIA - BUK6D120-60PX - Leistungs-MOSFET, p-Kanal, 60 V, 8 A, 0.095 ohm, SOT-1220, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 15W Bauform - Transistor: SOT-1220 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.095ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 26892 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D120-60PX | Nexperia | Trans MOSFET P-CH 60V 3A Automotive AEC-Q101 6-Pin DFN-MD EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK6D120-60PX | Nexperia USA Inc. | Description: MOSFET P-CH 60V 3A/8A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V Power Dissipation (Max): 2.3W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 1821 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D120-60PX | Nexperia | Trans MOSFET P-CH 60V 3A Automotive AEC-Q101 6-Pin DFN-MD EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D120-60PX | Nexperia | Trans MOSFET P-CH 60V 3A Automotive AEC-Q101 6-Pin DFN-MD EP T/R | auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D120-60PX | Nexperia | MOSFETs BUK6D120-60P/SOT1220/SOT1220 | auf Bestellung 14817 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D120-60PZ | Nexperia USA Inc. | Description: BUK6D120-60P/SOT1220/SOT1220 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V Power Dissipation (Max): 2.3W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D120-60PZ | Nexperia | MOSFET BUK6D120-60P/SOT1220/SOT1220 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D120-60PZ | NEXPERIA | Trans MOSFET P-CH 60V 3A Automotive 6-Pin DFN-MD EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D125-60EX | Nexperia | Trans MOSFET N-CH 60V 2.7A 6-Pin DFN-MD EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D125-60EX | Nexperia | MOSFET BUK6D125-60E/SOT1220/SOT1220 | auf Bestellung 6221 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D125-60EX | NEXPERIA | 60 V, N-channel Trench MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D125-60EX | NEXPERIA | Description: NEXPERIA - BUK6D125-60EX - Leistungs-MOSFET, n-Kanal, 60 V, 7.4 A, 0.092 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 7.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 15W Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 15W Bauform - Transistor: DFN2020MD Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.092ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.092ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 35835 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D125-60EX | Nexperia USA Inc. | Description: MOSFET N-CH 60V 2.7A/7.4A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 7.4A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.7A, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 8498 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D125-60EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 30A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 5.3A Pulsed drain current: 30A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 271mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D125-60EX | NEXPERIA | Description: NEXPERIA - BUK6D125-60EX - Leistungs-MOSFET, n-Kanal, 60 V, 7.4 A, 0.092 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 7.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 15W Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 15W Bauform - Transistor: DFN2020MD Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.092ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.092ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 35835 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D125-60EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 30A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 5.3A Pulsed drain current: 30A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 271mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D125-60EX | Nexperia USA Inc. | Description: MOSFET N-CH 60V 2.7A/7.4A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 7.4A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.7A, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D16-30EX | Nexperia USA Inc. | Description: MOS DISCRETES Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 16.8mOhm @ 8.4A, 10V Power Dissipation (Max): 2.3W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D16-30EX | Nexperia USA Inc. | Description: MOS DISCRETES Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 16.8mOhm @ 8.4A, 10V Power Dissipation (Max): 2.3W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D20-40EX | Nexperia | MOSFET BUK6D20-40E/SOT1220/SOT1220 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D210-60EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.1A; Idm: 23A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.1A Pulsed drain current: 23A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 456mΩ Mounting: SMD Gate charge: 3.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D210-60EX | Nexperia USA Inc. | Description: MOSFET N-CH 60V 2.1A/5.7A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 5.7A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D210-60EX | Nexperia | MOSFET BUK6D210-60E/SOT1220/SOT1220 | auf Bestellung 25753 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D210-60EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.1A; Idm: 23A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.1A Pulsed drain current: 23A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 456mΩ Mounting: SMD Gate charge: 3.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D210-60EX | Nexperia | 60 V, N-channel Trench MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D210-60EX | NEXPERIA | 60 V, N-channel Trench MOSFET | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D210-60EX | Nexperia USA Inc. | Description: MOSFET N-CH 60V 2.1A/5.7A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 5.7A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 7939 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D22-30EX | Nexperia USA Inc. | Description: MOSFET N-CH 30V 7.2A/22A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 7.2A, 10V Power Dissipation (Max): 2W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 4509 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D22-30EX | Nexperia | 30 V, N-channel Trench MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D22-30EX | NEXPERIA | 30 V, N-channel Trench MOSFET | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D22-30EX | Nexperia USA Inc. | Description: MOSFET N-CH 30V 7.2A/22A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 7.2A, 10V Power Dissipation (Max): 2W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D22-30EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 15.7A; Idm: 89A; 19W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 15.7A Pulsed drain current: 89A Power dissipation: 19W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D22-30EX | Nexperia | 30 V, N-channel Trench MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D22-30EX | Nexperia | MOSFET BUK6D22-30E/SOT1220/SOT1220 | auf Bestellung 14599 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D22-30EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 15.7A; Idm: 89A; 19W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 15.7A Pulsed drain current: 89A Power dissipation: 19W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D23-40EH | Nexperia USA Inc. | Description: SMALL SIGNAL MOSFETS FOR AUTOMOT Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V Power Dissipation (Max): 2.3W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 20 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D23-40EH | NEXPERIA | Description: NEXPERIA - BUK6D23-40EH - Leistungs-MOSFET, n-Kanal, 40 V, 19 A, 0.017 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D23-40EH | Nexperia | MOSFET MOSFET BUK6D23-40E/SOT1220 | auf Bestellung 2600 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D23-40EH | Nexperia USA Inc. | Description: SMALL SIGNAL MOSFETS FOR AUTOMOT Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V Power Dissipation (Max): 2.3W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 20 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D23-40EH | NEXPERIA | Description: NEXPERIA - BUK6D23-40EH - Leistungs-MOSFET, n-Kanal, 40 V, 19 A, 0.017 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 19A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7V euEccn: NLR Verlustleistung: 15W Bauform - Transistor: DFN2020MD Anzahl der Pins: 6Pin(s) Produktpalette: TrenchMOS Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.017ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D23-40EH | NEXPERIA | Trans MOSFET N-CH 40V 8A 6-Pin DFN-MD EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D23-40EX | Nexperia | Trans MOSFET N-CH 40V 8A 6-Pin DFN-MD EP T/R Automotive AEC-Q101 | auf Bestellung 1892 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK6D23-40EX | Nexperia | MOSFET BUK6D23-40E/SOT1220/SOT1220 | auf Bestellung 71020 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D23-40EX | Nexperia USA Inc. | Description: MOSFET N-CH 40V 8A/19A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V Power Dissipation (Max): 2.3W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 10727 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D23-40EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 76A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12A Pulsed drain current: 76A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D23-40EX | Nexperia | Trans MOSFET N-CH 40V 8A 6-Pin DFN-MD EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D23-40EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 76A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12A Pulsed drain current: 76A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D23-40EX | NEXPERIA | Trans MOSFET N-CH 40V 8A Automotive 6-Pin DFN-MD EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D23-40EX | Nexperia | Trans MOSFET N-CH 40V 8A 6-Pin DFN-MD EP T/R Automotive AEC-Q101 | auf Bestellung 1892 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK6D23-40EX | Nexperia USA Inc. | Description: MOSFET N-CH 40V 8A/19A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V Power Dissipation (Max): 2.3W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D230-80EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 3.6A; Idm: 20.4A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 3.6A Pulsed drain current: 20.4A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 575mΩ Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D230-80EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 3.6A; Idm: 20.4A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 3.6A Pulsed drain current: 20.4A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 575mΩ Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D230-80EX | NEXPERIA | 80 V, N-channel Trench MOSFET | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D230-80EX | Nexperia | 80 V, N-channel Trench MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D230-80EX | Nexperia USA Inc. | Description: MOSFET N-CH 80V 1.9A/5.1A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 5.1A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 1.9A, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 40 V Qualification: AEC-Q101 | auf Bestellung 8537 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D230-80EX | Nexperia | MOSFET BUK6D230-80E/SOT1220/SOT1220 | auf Bestellung 14314 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D230-80EX | Nexperia USA Inc. | Description: MOSFET N-CH 80V 1.9A/5.1A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 5.1A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 1.9A, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 40 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D30-40EX | NEXPERIA | Description: NEXPERIA - BUK6D30-40EX - Leistungs-MOSFET, n-Kanal, 40 V, 18 A, 0.023 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 18A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 19W Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 19W Bauform - Transistor: DFN2020MD Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.023ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.023ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 780 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D30-40EX | Nexperia USA Inc. | Description: MOSFET N-CH 40V 6A/18A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Power Dissipation (Max): 2W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D30-40EX | Nexperia | MOSFETs BUK6D30-40E/SOT1220/SOT1220 | auf Bestellung 4487 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D30-40EX | Nexperia | Trans MOSFET N-CH 40V 18A Automotive AEC-Q101 6-Pin DFN-MD EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D30-40EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12.8A; Idm: 73A; 19W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12.8A Pulsed drain current: 73A Power dissipation: 19W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 57mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D30-40EX | NEXPERIA | Description: NEXPERIA - BUK6D30-40EX - Leistungs-MOSFET, n-Kanal, 40 V, 18 A, 0.023 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 19W Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.023ohm rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 780 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D30-40EX | Nexperia USA Inc. | Description: MOSFET N-CH 40V 6A/18A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Power Dissipation (Max): 2W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D30-40EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12.8A; Idm: 73A; 19W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12.8A Pulsed drain current: 73A Power dissipation: 19W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 57mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D30-40EX | NEXPERIA | Trans MOSFET N-CH 400V 18A Automotive 6-Pin DFN-MD EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D30-40EX | Nexperia | Trans MOSFET N-CH 40V 18A Automotive AEC-Q101 6-Pin DFN-MD EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D38-30EX | Nexperia | 30 V, N-channel Trench MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D38-30EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 68A; 19W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12A Pulsed drain current: 68A Power dissipation: 19W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D38-30EX | Nexperia USA Inc. | Description: MOSFET N-CH 30V 5.5A/17A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V Power Dissipation (Max): 2W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D38-30EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 68A; 19W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12A Pulsed drain current: 68A Power dissipation: 19W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D38-30EX | NEXPERIA | 30 V, N-channel Trench MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D38-30EX | Nexperia | MOSFET BUK6D38-30E/SOT1220/SOT1220 | auf Bestellung 1150 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D38-30EX | Nexperia USA Inc. | Description: MOSFET N-CH 30V 5.5A/17A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V Power Dissipation (Max): 2W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 5220 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D385-100EX | Nexperia USA Inc. | Description: MOSFET N-CH 100V 1.4A/3.7A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 3.7A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V Qualification: AEC-Q101 | auf Bestellung 35648 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D385-100EX | Nexperia | 100 V, N-channel Trench MOSFET Automotive AEC-Q101 | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK6D385-100EX | NEXPERIA | Description: NEXPERIA - BUK6D385-100EX - Leistungs-MOSFET, n-Kanal, 100 V, 3.7 A, 0.28 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 3.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 15W Bauform - Transistor: DFN2020MD Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.28ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2120 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D385-100EX | Nexperia | 100 V, N-channel Trench MOSFET Automotive AEC-Q101 | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK6D385-100EX | Nexperia | MOSFET BUK6D385-100E/SOT1220/SOT1220 | auf Bestellung 3262 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D385-100EX | Nexperia USA Inc. | Description: MOSFET N-CH 100V 1.4A/3.7A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 3.7A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V Qualification: AEC-Q101 | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D385-100EX | Nexperia | 100 V, N-channel Trench MOSFET Automotive AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK6D385-100EX | Nexperia | 100 V, N-channel Trench MOSFET Automotive AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK6D385-100EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.6A Pulsed drain current: 15A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 1078mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D385-100EX | NEXPERIA | Description: NEXPERIA - BUK6D385-100EX - Leistungs-MOSFET, n-Kanal, 100 V, 3.7 A, 0.28 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 3.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 15W Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 15W Bauform - Transistor: DFN2020MD Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.28ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.28ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2120 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D385-100EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.6A Pulsed drain current: 15A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 1078mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D385-100EX | NEXPERIA | 100 V, N-channel Trench MOSFET | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D43-40P | NXP Semiconductors | NXP Semiconductors | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D43-40P,115 | Nexperia USA Inc. | Description: POWER FIELD-EFFECT TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D43-40PX | NEXPERIA | Description: NEXPERIA - BUK6D43-40PX - Leistungs-MOSFET, p-Kanal, 40 V, 14 A, 0.03 ohm, SOT-1220, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 14A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 15W Bauform - Transistor: SOT-1220 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.03ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 9383 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D43-40PX | Nexperia | Trans MOSFET P-CH 40V 6A Automotive AEC-Q101 6-Pin DFN-MD EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK6D43-40PX | Nexperia USA Inc. | Description: MOSFET P-CH 40V 6A DFN2020MD-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 6A, 10V Power Dissipation (Max): 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D43-40PX | NEXPERIA | Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -40V; -8.9A; Idm: -56A; 15W Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -40V Drain current: -8.9A Pulsed drain current: -56A Power dissipation: 15W Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±20V On-state resistance: 81mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D43-40PX | NEXPERIA | Description: NEXPERIA - BUK6D43-40PX - Leistungs-MOSFET, p-Kanal, 40 V, 14 A, 0.03 ohm, SOT-1220, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 14A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 15W Bauform - Transistor: SOT-1220 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.03ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 9383 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D43-40PX | NEXPERIA | Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -40V; -8.9A; Idm: -56A; 15W Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -40V Drain current: -8.9A Pulsed drain current: -56A Power dissipation: 15W Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±20V On-state resistance: 81mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D43-40PX | NEXPERIA | Trans MOSFET P-CH 40V 14A Automotive 6-Pin DFN-MD EP T/R | auf Bestellung 3070 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D43-40PX | Nexperia | Trans MOSFET P-CH 40V 6A Automotive AEC-Q101 6-Pin DFN-MD EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D43-40PX | Nexperia | MOSFET BUK6D43-40P/SOT1220/SOT1220 | auf Bestellung 42694 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D43-40PX | Nexperia USA Inc. | Description: MOSFET P-CH 40V 6A DFN2020MD-6 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 6A, 10V Power Dissipation (Max): 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 21471 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D43-40PX | Nexperia | Trans MOSFET P-CH 40V 6A Automotive AEC-Q101 6-Pin DFN-MD EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D43-60E,115 | Nexperia USA Inc. | Description: POWER FIELD-EFFECT TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D43-60EX | Nexperia USA Inc. | Description: MOSFET N-CH 60V 5A DFN2020MD-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 5A, 10V Power Dissipation (Max): 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D43-60EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.2A; Idm: 52A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8.2A Pulsed drain current: 52A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 93mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D43-60EX | NEXPERIA | Trans MOSFET N-CH 60V 5A Automotive 6-Pin DFN-MD EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D43-60EX | NEXPERIA | Description: NEXPERIA - BUK6D43-60EX - Leistungs-MOSFET, n-Kanal, 60 V, 13 A, 0.032 ohm, SOT-1220, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 13A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 15W Bauform - Transistor: SOT-1220 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.032ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1145 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D43-60EX | Nexperia | MOSFET BUK6D43-60E/SOT1220/SOT1220 | auf Bestellung 81995 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D43-60EX | Nexperia | Trans MOSFET N-CH 60V 5A Automotive AEC-Q101 6-Pin DFN-MD EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D43-60EX | NEXPERIA | Description: NEXPERIA - BUK6D43-60EX - Leistungs-MOSFET, n-Kanal, 60 V, 13 A, 0.032 ohm, SOT-1220, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 13A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 15W Bauform - Transistor: SOT-1220 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.032ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1145 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D43-60EX | Nexperia USA Inc. | Description: MOSFET N-CH 60V 5A DFN2020MD-6 Packaging: Bulk Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 5A, 10V Power Dissipation (Max): 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 332694 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D43-60EX | NEXPERIA | Trans MOSFET N-CH 60V 5A Automotive 6-Pin DFN-MD EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D43-60EX | Nexperia | Trans MOSFET N-CH 60V 5A Automotive AEC-Q101 6-Pin DFN-MD EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK6D43-60EX | NEXPERIA | Description: NEXPERIA - BUK6D43-60EX - Leistungs-MOSFET, n-Kanal, 60 V, 13 A, 0.032 ohm, SOT-1220, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 13A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 15W Bauform - Transistor: SOT-1220 Anzahl der Pins: 6Pin(s) Produktpalette: PW Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.032ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 327000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D43-60EX | Nexperia | Trans MOSFET N-CH 60V 5A Automotive AEC-Q101 6-Pin DFN-MD EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D43-60EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.2A; Idm: 52A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8.2A Pulsed drain current: 52A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 93mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D56-60EX | Nexperia | Trans MOSFET N-CH 60V 4A Automotive AEC-Q101 6-Pin DFN-MD EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D56-60EX | Nexperia USA Inc. | Description: MOSFET N-CH 60V 4A/11A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 99000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D56-60EX | NEXPERIA | Trans MOSFET N-CH 60V 11A Automotive 6-Pin DFN-MD EP | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D56-60EX | Nexperia | Trans MOSFET N-CH 60V 4A Automotive AEC-Q101 6-Pin DFN-MD EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D56-60EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 44A; 15W; DFN6,SOT1220 Mounting: SMD Case: DFN6; SOT1220 Kind of package: reel; tape Application: automotive industry Drain-source voltage: 60V Drain current: 8A On-state resistance: 0.122Ω Type of transistor: N-MOSFET Power dissipation: 15W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 44A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D56-60EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 44A; 15W; DFN6,SOT1220 Mounting: SMD Case: DFN6; SOT1220 Kind of package: reel; tape Application: automotive industry Drain-source voltage: 60V Drain current: 8A On-state resistance: 0.122Ω Type of transistor: N-MOSFET Power dissipation: 15W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 44A | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D56-60EX | Nexperia | MOSFET BUK6D56-60E/SOT1220/SOT1220 | auf Bestellung 2992 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D56-60EX | Nexperia USA Inc. | Description: MOSFET N-CH 60V 4A/11A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 107523 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D72-30EX | Nexperia USA Inc. | Description: MOSFET N-CH 30V 4A/11A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 11489 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D72-30EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 44A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.8A Pulsed drain current: 44A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 124mΩ Mounting: SMD Gate charge: 3.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D72-30EX | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 44A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.8A Pulsed drain current: 44A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 124mΩ Mounting: SMD Gate charge: 3.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D72-30EX | NEXPERIA | Description: NEXPERIA - BUK6D72-30EX - Leistungs-MOSFET, n-Kanal, 30 V, 11 A, 0.053 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 11A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 15W Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 15W Bauform - Transistor: DFN2020MD Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.053ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.053ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 4890 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D72-30EX | Nexperia | MOSFET BUK6D72-30E/SOT1220/SOT1220 | auf Bestellung 5455 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D72-30EX | Nexperia USA Inc. | Description: MOSFET N-CH 30V 4A/11A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D72-30EX | Nexperia | 30 V, N-channel Trench MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D72-30EX | NEXPERIA | 30 V, N-channel Trench MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D72-30EX | NEXPERIA | Description: NEXPERIA - BUK6D72-30EX - Leistungs-MOSFET, n-Kanal, 30 V, 11 A, 0.053 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 11A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 15W Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 15W Bauform - Transistor: DFN2020MD Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.053ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.053ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 4890 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D77-60EX | NEXPERIA | Description: NEXPERIA - BUK6D77-60EX - Leistungs-MOSFET, n-Kanal, 60 V, 10.6 A, 0.059 ohm, DFN2020MD, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 10.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 18.8W Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 18.8W Bauform - Transistor: DFN2020MD Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.059ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.059ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 99835 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BUK6D77-60EX | Nexperia USA Inc. | Description: MOSFET N-CH 60V 3.4A/10.6A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 10.6A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 3.4A, 10V Power Dissipation (Max): 2W (Ta), 18.8W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 23565 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6D77-60EX | Nexperia | 60 V, N-channel Trench MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
BUK6D77-60EX | NEXPERIA | 60 V, N-channel Trench MOSFET | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |