Produkte > MICRON TECHNOLOGY INC. > Alle Produkte des Herstellers MICRON TECHNOLOGY INC. (10701) > Seite 166 nach 179
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MTFDDAV1T9TCB-1AR1ZABYY | Micron Technology Inc. |
![]() Packaging: Bulk Size / Dimension: 80.00mm x 22.00mm x 3.80mm Memory Size: 1.92TB Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC) Type: SATA III Weight: 0.353 oz (10 g) Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.3V Form Factor: M.2 Module Speed - Read: 540MB/s Speed - Write: 520MB/s |
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MTFDDAK1T9TCB-1AR16ABYY | Micron Technology Inc. |
![]() Packaging: Bulk Size / Dimension: 100.45mm x 69.85mm x 7.00mm Memory Size: 1.92TB Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC) Type: SATA III Weight: 2.47 oz (70.38 g) Operating Temperature: 0°C ~ 70°C Voltage - Supply: 5V, 12V Form Factor: 2.5" Speed - Read: 540MB/s Speed - Write: 520MB/s |
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MTFDDAV1T9TCB-1AR16ABYY | Micron Technology Inc. |
![]() Packaging: Bulk Size / Dimension: 80.00mm x 22.00mm x 3.80mm Memory Size: 1.92TB Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC) Type: SATA III Weight: 0.353 oz (10 g) Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.3V Form Factor: M.2 Module Speed - Read: 540MB/s Speed - Write: 520MB/s |
Produkt ist nicht verfügbar |
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MTFDDAK3T8TCB-1AR1ZABYY | Micron Technology Inc. |
![]() Packaging: Bulk Size / Dimension: 100.45mm x 69.85mm x 7.00mm Memory Size: 3.84TB Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC) Type: SATA III Weight: 2.47 oz (70.38 g) Operating Temperature: 0°C ~ 70°C Voltage - Supply: 5V, 12V Form Factor: 2.5" Speed - Read: 540MB/s Speed - Write: 520MB/s |
Produkt ist nicht verfügbar |
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MTFDDAK3T8TCB-1AR16ABYY | Micron Technology Inc. |
![]() Packaging: Bulk Size / Dimension: 100.45mm x 69.85mm x 7.00mm Memory Size: 3.84TB Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC) Type: SATA III Weight: 2.47 oz (70.38 g) Operating Temperature: 0°C ~ 70°C Voltage - Supply: 5V, 12V Form Factor: 2.5" Speed - Read: 540MB/s Speed - Write: 520MB/s |
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PC28F128P30BF65B TR | Micron Technology Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 64-TBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 52 MHz Memory Format: FLASH Supplier Device Package: 64-EasyBGA (10x13) Write Cycle Time - Word, Page: 65ns Memory Interface: Parallel Access Time: 65 ns Memory Organization: 8M x 16 DigiKey Programmable: Not Verified |
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MT29F1T08EEHBFJ4-R:B | Micron Technology Inc. |
Description: IC FLASH 1TBIT PARALLEL 132VBGA Packaging: Bulk Package / Case: 132-VBGA Mounting Type: Surface Mount Memory Size: 1Tbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NAND (TLC) Memory Format: FLASH Supplier Device Package: 132-VBGA (12x18) Memory Interface: Parallel Memory Organization: 128G x 8 DigiKey Programmable: Not Verified |
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MT29F1T08EEHBFJ4-R:B TR | Micron Technology Inc. |
Description: IC FLASH 1TBIT PARALLEL 132VBGA Packaging: Tape & Reel (TR) Package / Case: 132-VBGA Mounting Type: Surface Mount Memory Size: 1Tbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NAND (TLC) Memory Format: FLASH Supplier Device Package: 132-VBGA (12x18) Memory Interface: Parallel Memory Organization: 128G x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT29F1T08CUCABK8-6:A TR | Micron Technology Inc. |
Description: IC FLASH 1TBIT PARALLEL 167MHZ Packaging: Tape & Reel (TR) Memory Size: 1Tbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 167 MHz Memory Format: FLASH Memory Interface: Parallel Memory Organization: 128G x 8 DigiKey Programmable: Not Verified |
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MT29E512G08CMCBBH7-6:B TR | Micron Technology Inc. |
Description: IC FLASH 512GBIT PARALLEL 167MHZ Packaging: Tape & Reel (TR) Memory Size: 512Gbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 167 MHz Memory Format: FLASH Memory Interface: Parallel Memory Organization: 64G x 8 DigiKey Programmable: Not Verified |
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MT29F128G08AMCDBL1-6:D TR | Micron Technology Inc. |
Description: IC FLASH 128GBIT PARALLEL 167MHZ Packaging: Tape & Reel (TR) Memory Size: 128Gbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 167 MHz Memory Format: FLASH Memory Interface: Parallel Memory Organization: 16G x 8 DigiKey Programmable: Not Verified |
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MT29F2T08CTCCBJ7-6C:C TR | Micron Technology Inc. |
Description: IC FLASH 2TBIT 167MHZ 152LBGA Packaging: Tape & Reel (TR) Package / Case: 152-LBGA Mounting Type: Surface Mount Memory Size: 2Tbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 167 MHz Memory Format: FLASH Supplier Device Package: 152-LBGA (14x18) Memory Interface: Parallel Memory Organization: 256G x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT29TZZZ5D6EKFRL-107 W.96R TR | Micron Technology Inc. |
Description: 128MX8/128MX16 MCP PLASTIC 1.8V Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT29TZZZ5D6DKFRL-107 W.9A6 | Micron Technology Inc. |
Description: MLC EMMC/LPDDR3 144G Packaging: Bulk DigiKey Programmable: Not Verified |
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MT29TZZZ5D6DKFRL-107 W.9A6 TR | Micron Technology Inc. |
Description: MLC EMMC/LPDDR3 144G Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
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MT29TZZZ5D6EKFRL-107 W.96R | Micron Technology Inc. |
Description: MLC EMMC/LPDDR3 144G Packaging: Bulk DigiKey Programmable: Not Verified |
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MT29TZZZ5D6JKFRL-107 W.96R | Micron Technology Inc. |
Description: MLC EMMC/LPDDR3 144G Packaging: Bulk DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT29TZZZ5D7DKFRL-107 W.9A7 | Micron Technology Inc. |
Description: EMCP3 272G Packaging: Bulk DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT29TZZZ8D5JKERL-107 W.95E | Micron Technology Inc. |
Description: IC FLASH RAM 64GBIT MMC/LPDRAM Packaging: Box Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3) Memory Type: Non-Volatile, Volatile Operating Temperature: -25°C ~ 85°C Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Technology: FLASH - NAND, DRAM - LPDDR3 Clock Frequency: 933 MHz Memory Format: FLASH, RAM Memory Interface: MMC, LPDRAM Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT29TZZZ5D7DKFRL-107 W.9A7 TR | Micron Technology Inc. |
Description: EMCP3 272G Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT29TZZZ8D5JKERL-107 W.95E TR | Micron Technology Inc. |
Description: IC FLASH RAM 64GBIT MMC 933MHZ Packaging: Tape & Reel (TR) Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3) Memory Type: Non-Volatile, Volatile Operating Temperature: -25°C ~ 85°C Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Technology: FLASH - NAND, DRAM - LPDDR3 Clock Frequency: 933 MHz Memory Format: FLASH, RAM Memory Interface: MMC, LPDRAM Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT29F2G08ABBFAH4-IT:F TR | Micron Technology Inc. |
Description: IC FLASH 2GBIT PARALLEL 63VFBGA Packaging: Tape & Reel (TR) Package / Case: 63-VFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 63-VFBGA (9x11) Memory Interface: Parallel Memory Organization: 256M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT29F2G08ABBFAH4:F | Micron Technology Inc. |
Description: IC FLASH 2GBIT PARALLEL 63VFBGA Packaging: Tray Package / Case: 63-VFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 63-VFBGA (9x11) Memory Interface: Parallel Memory Organization: 256M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT29F2G08ABBFAH4-IT:F | Micron Technology Inc. |
Description: IC FLASH 2GBIT PARALLEL 63VFBGA Packaging: Tray Package / Case: 63-VFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 63-VFBGA (9x11) Memory Interface: Parallel Memory Organization: 256M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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M29F160FT55N3E2 | Micron Technology Inc. |
![]() Packaging: Tray Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-TSOP I Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 2M x 8, 1M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT41K256M16TW-107:P TR | Micron Technology Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 96-FBGA (8x14) Memory Interface: Parallel Access Time: 20 ns Memory Organization: 256M x 16 DigiKey Programmable: Not Verified |
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MT25TL512HBA8ESF-0AAT | Micron Technology Inc. |
![]() Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOP2 Write Cycle Time - Word, Page: 8ms, 2.8ms Memory Interface: SPI Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT53D512M32D2DS-053 WT:D | Micron Technology Inc. |
Description: LPDDR4 16Gb 512Mb x32 3733 Mbps Packaging: Tape & Reel (TR) Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 16Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.1V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.866 GHz Memory Format: DRAM Supplier Device Package: 200-WFBGA (10x14.5) Memory Organization: 512M x 32 |
auf Bestellung 1590 Stücke: Lieferzeit 10-14 Tag (e) |
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MT53D512M32D2DS-053 WT:D TR | Micron Technology Inc. |
Description: IC DRAM 16GBIT 1.866GHZ 200WFBGA Packaging: Tape & Reel (TR) Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 16Gbit Memory Type: Volatile Operating Temperature: -30°C ~ 85°C (TC) Voltage - Supply: 1.1V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.866 GHz Memory Format: DRAM Supplier Device Package: 200-WFBGA (10x14.5) Memory Organization: 512M x 32 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT53D512M32D2DS-053 WT:D TR | Micron Technology Inc. |
Description: IC DRAM 16GBIT 1.866GHZ 200WFBGA Packaging: Cut Tape (CT) Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 16Gbit Memory Type: Volatile Operating Temperature: -30°C ~ 85°C (TC) Voltage - Supply: 1.1V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.866 GHz Memory Format: DRAM Supplier Device Package: 200-WFBGA (10x14.5) Memory Organization: 512M x 32 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT53E1G32D2FW-046 WT:B | Micron Technology Inc. |
![]() Packaging: Tray Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -25°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 1G x 32 DigiKey Programmable: Not Verified |
auf Bestellung 672 Stücke: Lieferzeit 10-14 Tag (e) |
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MT53E1G32D2FW-046 WT:A | Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -25°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Memory Organization: 1G x 32 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT53E1G32D2FW-046 IT:B | Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 1G x 32 DigiKey Programmable: Not Verified |
auf Bestellung 877 Stücke: Lieferzeit 10-14 Tag (e) |
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MT53E1G32D2FW-046 AAT:B | Micron Technology Inc. |
![]() Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 1G x 32 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1416 Stücke: Lieferzeit 10-14 Tag (e) |
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MT53E1G32D2FW-046 WT:B TR | Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -25°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 1G x 32 DigiKey Programmable: Not Verified |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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MT53E1G32D2FW-046 WT:A TR | Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -25°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Memory Organization: 1G x 32 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT53E1G32D2FW-046 IT:A TR | Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Memory Organization: 1G x 32 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT53E1G32D2FW-046 IT:A | Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Memory Organization: 1G x 32 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT53E1G32D2FW-046 IT:B TR | Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 1G x 32 DigiKey Programmable: Not Verified |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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MT53E1G32D2FW-046 AIT:A TR | Micron Technology Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Memory Organization: 1G x 32 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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MT53E1G32D2FW-046 AIT:B TR | Micron Technology Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 1G x 32 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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MT53E1G32D2FW-046 AIT:A | Micron Technology Inc. |
![]() Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Memory Organization: 1G x 32 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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MT53E1G32D2FW-046 AIT:B | Micron Technology Inc. |
![]() Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 1G x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
auf Bestellung 1360 Stücke: Lieferzeit 10-14 Tag (e) |
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MT53E1G32D2FW-046 AAT:A TR | Micron Technology Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Memory Organization: 1G x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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MT53E1G32D2FW-046 AAT:A | Micron Technology Inc. |
![]() Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Memory Organization: 1G x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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MT53E1G32D2FW-046 AAT:B TR | Micron Technology Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 1G x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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MT53E1G32D2FW-046 AUT:A | Micron Technology Inc. |
![]() Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Memory Organization: 1G x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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MT53E1G32D2FW-046 AUT:A TR | Micron Technology Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Memory Organization: 1G x 32 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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MT53E1G32D2FW-046 AUT:B | Micron Technology Inc. |
![]() Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 1G x 32 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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MT53E1G32D2FW-046 AUT:B TR | Micron Technology Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 1G x 32 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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MT53E1G32D2FW-046 AIT:C | Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Packaging: Tray Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 1G x 32 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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MT53E1G32D2FW-046 AIT:C TR | Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 1G x 32 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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MT53E1G32D2FW-046 AAT:C TR | Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 1G x 32 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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MT53E1G32D2FW-046 AAT:C | Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Packaging: Tray Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 1G x 32 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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MT53E1G32D2FW-046 AUT:C | Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Packaging: Tray Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 1G x 32 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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MT53E1G32D2FW-046 AUT:C TR | Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 1G x 32 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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MT29TZZZ8D5JKETS-107 W.95Q TR | Micron Technology Inc. |
Description: IC FLASH RAM 64GBIT MMC 168VFBGA Packaging: Tape & Reel (TR) Package / Case: 168-VFBGA Mounting Type: Surface Mount Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3) Memory Type: Non-Volatile, Volatile Operating Temperature: -25°C ~ 85°C Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Technology: FLASH - NAND, DRAM - LPDDR3 Clock Frequency: 933 MHz Memory Format: FLASH, RAM Supplier Device Package: 168-VFBGA (12x12) Memory Interface: MMC, LPDRAM Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT29TZZZ8D5JKETS-107 W.95Q | Micron Technology Inc. |
Description: IC FLASH RAM 64GBIT MMC 168VFBGA Packaging: Bulk Package / Case: 168-VFBGA Mounting Type: Surface Mount Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3) Memory Type: Non-Volatile, Volatile Operating Temperature: -25°C ~ 85°C Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Technology: FLASH - NAND, DRAM - LPDDR3 Clock Frequency: 933 MHz Memory Format: FLASH, RAM Supplier Device Package: 168-VFBGA (12x12) Memory Interface: MMC, LPDRAM Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT49H8M36FM-33 TR | Micron Technology Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 144-TFBGA Mounting Type: Surface Mount Memory Size: 288Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.7V ~ 1.9V Technology: DRAM Clock Frequency: 300 MHz Memory Format: DRAM Supplier Device Package: 144-FBGA (18.5x11) Memory Interface: Parallel Access Time: 20 ns Memory Organization: 8M x 36 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT49H16M18FM-33 TR | Micron Technology Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 144-TFBGA Mounting Type: Surface Mount Memory Size: 288Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.7V ~ 1.9V Technology: DRAM Clock Frequency: 300 MHz Memory Format: DRAM Supplier Device Package: 144-µBGA (18.5x11) Memory Interface: Parallel Access Time: 20 ns Memory Organization: 16M x 18 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
MTFDDAV1T9TCB-1AR1ZABYY |
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Hersteller: Micron Technology Inc.
Description: SSD 1.92TB M.2 TLC SATA III 3.3V
Packaging: Bulk
Size / Dimension: 80.00mm x 22.00mm x 3.80mm
Memory Size: 1.92TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: SATA III
Weight: 0.353 oz (10 g)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Form Factor: M.2 Module
Speed - Read: 540MB/s
Speed - Write: 520MB/s
Description: SSD 1.92TB M.2 TLC SATA III 3.3V
Packaging: Bulk
Size / Dimension: 80.00mm x 22.00mm x 3.80mm
Memory Size: 1.92TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: SATA III
Weight: 0.353 oz (10 g)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Form Factor: M.2 Module
Speed - Read: 540MB/s
Speed - Write: 520MB/s
Produkt ist nicht verfügbar
MTFDDAK1T9TCB-1AR16ABYY |
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Hersteller: Micron Technology Inc.
Description: SSD 1.92TB 2.5" TLC SATAIII-12V
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 7.00mm
Memory Size: 1.92TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: SATA III
Weight: 2.47 oz (70.38 g)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 5V, 12V
Form Factor: 2.5"
Speed - Read: 540MB/s
Speed - Write: 520MB/s
Description: SSD 1.92TB 2.5" TLC SATAIII-12V
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 7.00mm
Memory Size: 1.92TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: SATA III
Weight: 2.47 oz (70.38 g)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 5V, 12V
Form Factor: 2.5"
Speed - Read: 540MB/s
Speed - Write: 520MB/s
Produkt ist nicht verfügbar
MTFDDAV1T9TCB-1AR16ABYY |
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Hersteller: Micron Technology Inc.
Description: SSD 1.92TB M.2 TLC SATA III 3.3V
Packaging: Bulk
Size / Dimension: 80.00mm x 22.00mm x 3.80mm
Memory Size: 1.92TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: SATA III
Weight: 0.353 oz (10 g)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Form Factor: M.2 Module
Speed - Read: 540MB/s
Speed - Write: 520MB/s
Description: SSD 1.92TB M.2 TLC SATA III 3.3V
Packaging: Bulk
Size / Dimension: 80.00mm x 22.00mm x 3.80mm
Memory Size: 1.92TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: SATA III
Weight: 0.353 oz (10 g)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Form Factor: M.2 Module
Speed - Read: 540MB/s
Speed - Write: 520MB/s
Produkt ist nicht verfügbar
MTFDDAK3T8TCB-1AR1ZABYY |
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Hersteller: Micron Technology Inc.
Description: SSD 3.84TB 2.5" TLC SATAIII-12V
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 7.00mm
Memory Size: 3.84TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: SATA III
Weight: 2.47 oz (70.38 g)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 5V, 12V
Form Factor: 2.5"
Speed - Read: 540MB/s
Speed - Write: 520MB/s
Description: SSD 3.84TB 2.5" TLC SATAIII-12V
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 7.00mm
Memory Size: 3.84TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: SATA III
Weight: 2.47 oz (70.38 g)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 5V, 12V
Form Factor: 2.5"
Speed - Read: 540MB/s
Speed - Write: 520MB/s
Produkt ist nicht verfügbar
MTFDDAK3T8TCB-1AR16ABYY |
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Hersteller: Micron Technology Inc.
Description: SSD 3.84TB 2.5" TLC SATAIII-12V
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 7.00mm
Memory Size: 3.84TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: SATA III
Weight: 2.47 oz (70.38 g)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 5V, 12V
Form Factor: 2.5"
Speed - Read: 540MB/s
Speed - Write: 520MB/s
Description: SSD 3.84TB 2.5" TLC SATAIII-12V
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 7.00mm
Memory Size: 3.84TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: SATA III
Weight: 2.47 oz (70.38 g)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 5V, 12V
Form Factor: 2.5"
Speed - Read: 540MB/s
Speed - Write: 520MB/s
Produkt ist nicht verfügbar
PC28F128P30BF65B TR |
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Hersteller: Micron Technology Inc.
Description: IC FLASH 128MBIT PAR 64EASYBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 52 MHz
Memory Format: FLASH
Supplier Device Package: 64-EasyBGA (10x13)
Write Cycle Time - Word, Page: 65ns
Memory Interface: Parallel
Access Time: 65 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT PAR 64EASYBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 52 MHz
Memory Format: FLASH
Supplier Device Package: 64-EasyBGA (10x13)
Write Cycle Time - Word, Page: 65ns
Memory Interface: Parallel
Access Time: 65 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT29F1T08EEHBFJ4-R:B |
Hersteller: Micron Technology Inc.
Description: IC FLASH 1TBIT PARALLEL 132VBGA
Packaging: Bulk
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1TBIT PARALLEL 132VBGA
Packaging: Bulk
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT29F1T08EEHBFJ4-R:B TR |
Hersteller: Micron Technology Inc.
Description: IC FLASH 1TBIT PARALLEL 132VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1TBIT PARALLEL 132VBGA
Packaging: Tape & Reel (TR)
Package / Case: 132-VBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: 132-VBGA (12x18)
Memory Interface: Parallel
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT29F1T08CUCABK8-6:A TR |
Hersteller: Micron Technology Inc.
Description: IC FLASH 1TBIT PARALLEL 167MHZ
Packaging: Tape & Reel (TR)
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 167 MHz
Memory Format: FLASH
Memory Interface: Parallel
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1TBIT PARALLEL 167MHZ
Packaging: Tape & Reel (TR)
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 167 MHz
Memory Format: FLASH
Memory Interface: Parallel
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT29E512G08CMCBBH7-6:B TR |
Hersteller: Micron Technology Inc.
Description: IC FLASH 512GBIT PARALLEL 167MHZ
Packaging: Tape & Reel (TR)
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 167 MHz
Memory Format: FLASH
Memory Interface: Parallel
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512GBIT PARALLEL 167MHZ
Packaging: Tape & Reel (TR)
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 167 MHz
Memory Format: FLASH
Memory Interface: Parallel
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT29F128G08AMCDBL1-6:D TR |
Hersteller: Micron Technology Inc.
Description: IC FLASH 128GBIT PARALLEL 167MHZ
Packaging: Tape & Reel (TR)
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 167 MHz
Memory Format: FLASH
Memory Interface: Parallel
Memory Organization: 16G x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128GBIT PARALLEL 167MHZ
Packaging: Tape & Reel (TR)
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 167 MHz
Memory Format: FLASH
Memory Interface: Parallel
Memory Organization: 16G x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT29F2T08CTCCBJ7-6C:C TR |
Hersteller: Micron Technology Inc.
Description: IC FLASH 2TBIT 167MHZ 152LBGA
Packaging: Tape & Reel (TR)
Package / Case: 152-LBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 167 MHz
Memory Format: FLASH
Supplier Device Package: 152-LBGA (14x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 2TBIT 167MHZ 152LBGA
Packaging: Tape & Reel (TR)
Package / Case: 152-LBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 167 MHz
Memory Format: FLASH
Supplier Device Package: 152-LBGA (14x18)
Memory Interface: Parallel
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT29TZZZ5D6EKFRL-107 W.96R TR |
Hersteller: Micron Technology Inc.
Description: 128MX8/128MX16 MCP PLASTIC 1.8V
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: 128MX8/128MX16 MCP PLASTIC 1.8V
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT29TZZZ5D6DKFRL-107 W.9A6 |
Hersteller: Micron Technology Inc.
Description: MLC EMMC/LPDDR3 144G
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: MLC EMMC/LPDDR3 144G
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT29TZZZ5D6DKFRL-107 W.9A6 TR |
Hersteller: Micron Technology Inc.
Description: MLC EMMC/LPDDR3 144G
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: MLC EMMC/LPDDR3 144G
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT29TZZZ5D6EKFRL-107 W.96R |
Hersteller: Micron Technology Inc.
Description: MLC EMMC/LPDDR3 144G
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: MLC EMMC/LPDDR3 144G
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT29TZZZ5D6JKFRL-107 W.96R |
Hersteller: Micron Technology Inc.
Description: MLC EMMC/LPDDR3 144G
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: MLC EMMC/LPDDR3 144G
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT29TZZZ5D7DKFRL-107 W.9A7 |
Hersteller: Micron Technology Inc.
Description: EMCP3 272G
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: EMCP3 272G
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT29TZZZ8D5JKERL-107 W.95E |
Hersteller: Micron Technology Inc.
Description: IC FLASH RAM 64GBIT MMC/LPDRAM
Packaging: Box
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
Description: IC FLASH RAM 64GBIT MMC/LPDRAM
Packaging: Box
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT29TZZZ5D7DKFRL-107 W.9A7 TR |
Hersteller: Micron Technology Inc.
Description: EMCP3 272G
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: EMCP3 272G
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT29TZZZ8D5JKERL-107 W.95E TR |
Hersteller: Micron Technology Inc.
Description: IC FLASH RAM 64GBIT MMC 933MHZ
Packaging: Tape & Reel (TR)
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
Description: IC FLASH RAM 64GBIT MMC 933MHZ
Packaging: Tape & Reel (TR)
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT29F2G08ABBFAH4-IT:F TR |
Hersteller: Micron Technology Inc.
Description: IC FLASH 2GBIT PARALLEL 63VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (9x11)
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 2GBIT PARALLEL 63VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (9x11)
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT29F2G08ABBFAH4:F |
Hersteller: Micron Technology Inc.
Description: IC FLASH 2GBIT PARALLEL 63VFBGA
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (9x11)
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 2GBIT PARALLEL 63VFBGA
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (9x11)
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT29F2G08ABBFAH4-IT:F |
Hersteller: Micron Technology Inc.
Description: IC FLASH 2GBIT PARALLEL 63VFBGA
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (9x11)
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 2GBIT PARALLEL 63VFBGA
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (9x11)
Memory Interface: Parallel
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
M29F160FT55N3E2 |
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Hersteller: Micron Technology Inc.
Description: IC FLASH 16MBIT PAR 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT PAR 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT41K256M16TW-107:P TR |
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Hersteller: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 96FBGA
Packaging: Cut Tape (CT)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (8x14)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 4GBIT PAR 96FBGA
Packaging: Cut Tape (CT)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (8x14)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT25TL512HBA8ESF-0AAT |
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Hersteller: Micron Technology Inc.
Description: IC FLASH 512MBIT SPI 16SOP2
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP2
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI 16SOP2
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP2
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT53D512M32D2DS-053 WT:D |
Hersteller: Micron Technology Inc.
Description: LPDDR4 16Gb 512Mb x32 3733 Mbps
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Memory Organization: 512M x 32
Description: LPDDR4 16Gb 512Mb x32 3733 Mbps
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Memory Organization: 512M x 32
auf Bestellung 1590 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
100+ | 20.24 EUR |
300+ | 18.48 EUR |
500+ | 17.6 EUR |
1000+ | 16.72 EUR |
MT53D512M32D2DS-053 WT:D TR |
Hersteller: Micron Technology Inc.
Description: IC DRAM 16GBIT 1.866GHZ 200WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Memory Organization: 512M x 32
DigiKey Programmable: Not Verified
Description: IC DRAM 16GBIT 1.866GHZ 200WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Memory Organization: 512M x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT53D512M32D2DS-053 WT:D TR |
Hersteller: Micron Technology Inc.
Description: IC DRAM 16GBIT 1.866GHZ 200WFBGA
Packaging: Cut Tape (CT)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Memory Organization: 512M x 32
DigiKey Programmable: Not Verified
Description: IC DRAM 16GBIT 1.866GHZ 200WFBGA
Packaging: Cut Tape (CT)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Memory Organization: 512M x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT53E1G32D2FW-046 WT:B |
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Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
auf Bestellung 672 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 50.49 EUR |
10+ | 44.83 EUR |
25+ | 42.75 EUR |
40+ | 41.72 EUR |
80+ | 40.24 EUR |
230+ | 38.09 EUR |
MT53E1G32D2FW-046 WT:A |
Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT53E1G32D2FW-046 IT:B |
Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
auf Bestellung 877 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 52.85 EUR |
10+ | 46.91 EUR |
25+ | 44.74 EUR |
50+ | 43.15 EUR |
100+ | 41.63 EUR |
250+ | 39.68 EUR |
MT53E1G32D2FW-046 AAT:B |
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Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1416 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 71.33 EUR |
10+ | 66.15 EUR |
25+ | 63.78 EUR |
50+ | 62.19 EUR |
100+ | 54.5 EUR |
250+ | 52.99 EUR |
MT53E1G32D2FW-046 WT:B TR |
Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 37.96 EUR |
MT53E1G32D2FW-046 WT:A TR |
Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT53E1G32D2FW-046 IT:A TR |
Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT53E1G32D2FW-046 IT:A |
Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT53E1G32D2FW-046 IT:B TR |
Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 43.93 EUR |
MT53E1G32D2FW-046 AIT:A TR |
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Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
MT53E1G32D2FW-046 AIT:B TR |
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Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
MT53E1G32D2FW-046 AIT:A |
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Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
MT53E1G32D2FW-046 AIT:B |
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Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 1360 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 66.83 EUR |
10+ | 59.32 EUR |
25+ | 56.57 EUR |
50+ | 54.56 EUR |
100+ | 52.63 EUR |
250+ | 50.17 EUR |
MT53E1G32D2FW-046 AAT:A TR |
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Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
MT53E1G32D2FW-046 AAT:A |
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Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
MT53E1G32D2FW-046 AAT:B TR |
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Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
MT53E1G32D2FW-046 AUT:A |
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Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
MT53E1G32D2FW-046 AUT:A TR |
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Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
MT53E1G32D2FW-046 AUT:B |
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Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
MT53E1G32D2FW-046 AUT:B TR |
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Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
MT53E1G32D2FW-046 AIT:C |
Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
MT53E1G32D2FW-046 AIT:C TR |
Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
MT53E1G32D2FW-046 AAT:C TR |
Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
MT53E1G32D2FW-046 AAT:C |
Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
MT53E1G32D2FW-046 AUT:C |
Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
MT53E1G32D2FW-046 AUT:C TR |
Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
MT29TZZZ8D5JKETS-107 W.95Q TR |
Hersteller: Micron Technology Inc.
Description: IC FLASH RAM 64GBIT MMC 168VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 168-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 168-VFBGA (12x12)
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
Description: IC FLASH RAM 64GBIT MMC 168VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 168-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 168-VFBGA (12x12)
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT29TZZZ8D5JKETS-107 W.95Q |
Hersteller: Micron Technology Inc.
Description: IC FLASH RAM 64GBIT MMC 168VFBGA
Packaging: Bulk
Package / Case: 168-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 168-VFBGA (12x12)
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
Description: IC FLASH RAM 64GBIT MMC 168VFBGA
Packaging: Bulk
Package / Case: 168-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit (NAND), 8Gbit (LPDDR3)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: FLASH - NAND, DRAM - LPDDR3
Clock Frequency: 933 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 168-VFBGA (12x12)
Memory Interface: MMC, LPDRAM
Memory Organization: 68G x 8 (NAND), 256M x 32 (LPDDR3)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT49H8M36FM-33 TR |
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Hersteller: Micron Technology Inc.
Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-FBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 8M x 36
DigiKey Programmable: Not Verified
Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-FBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 8M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MT49H16M18FM-33 TR |
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Hersteller: Micron Technology Inc.
Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 16M x 18
DigiKey Programmable: Not Verified
Description: IC DRAM 288MBIT PARALLEL 144UBGA
Packaging: Tape & Reel (TR)
Package / Case: 144-TFBGA
Mounting Type: Surface Mount
Memory Size: 288Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: DRAM
Clock Frequency: 300 MHz
Memory Format: DRAM
Supplier Device Package: 144-µBGA (18.5x11)
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 16M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar