MT53E1G32D2FW-046 AUT:A TR Micron Technology Inc.
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Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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Technische Details MT53E1G32D2FW-046 AUT:A TR Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA, Packaging: Tape & Reel (TR), Package / Case: 200-TFBGA, Mounting Type: Surface Mount, Memory Size: 32Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 125°C (TC), Voltage - Supply: 1.06V ~ 1.17V, Technology: SDRAM - Mobile LPDDR4X, Clock Frequency: 2.133 GHz, Memory Format: DRAM, Supplier Device Package: 200-TFBGA (10x14.5), Write Cycle Time - Word, Page: 18ns, Memory Interface: Parallel, Memory Organization: 1G x 32, DigiKey Programmable: Not Verified, Grade: Automotive, Qualification: AEC-Q100.
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MT53E1G32D2FW-046 AUT:A TR | Hersteller : Micron |
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