MT53E1G32D2FW-046 WT:B TR Micron Technology Inc.
Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2000+ | 37.96 EUR |
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Technische Details MT53E1G32D2FW-046 WT:B TR Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA, Packaging: Tape & Reel (TR), Package / Case: 200-TFBGA, Mounting Type: Surface Mount, Memory Size: 32Gbit, Memory Type: Volatile, Operating Temperature: -25°C ~ 85°C (TC), Voltage - Supply: 1.06V ~ 1.17V, Technology: SDRAM - Mobile LPDDR4, Clock Frequency: 2.133 GHz, Memory Format: DRAM, Supplier Device Package: 200-TFBGA (10x14.5), Write Cycle Time - Word, Page: 18ns, Memory Interface: Parallel, Access Time: 3.5 ns, Memory Organization: 1G x 32, DigiKey Programmable: Not Verified.
Weitere Produktangebote MT53E1G32D2FW-046 WT:B TR nach Preis ab 37.44 EUR bis 56.02 EUR
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MT53E1G32D2FW-046 WT:B TR | Hersteller : Micron |
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auf Bestellung 1887 Stücke: Lieferzeit 10-14 Tag (e) |
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MT53E1G32D2FW-046 WT:B TR | Hersteller : Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Packaging: Cut Tape (CT) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -25°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 1G x 32 DigiKey Programmable: Not Verified |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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MT53E1G32D2FW-046 WT:B TR | Hersteller : Micron Technology | DRAM Chip Mobile LPDDR4 SDRAM 32Gbit 1Gx32 1.1V/1.8V 200-Pin TFBGA T/R |
Produkt ist nicht verfügbar |
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MT53E1G32D2FW-046 WT:B TR | Hersteller : Micron Technology | MT53E1G32D2FW-046 WT:B TR |
Produkt ist nicht verfügbar |