Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (4150) > Seite 47 nach 70
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APTC60VDAM45T1G | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A Technology: CoolMOS™; SJ-MOSFET Drain-source voltage: 600V Drain current: 38A Pulsed drain current: 130A Power dissipation: 250W Case: SP1 Gate-source voltage: ±20V On-state resistance: 45mΩ Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Topology: boost chopper x2; NTC thermistor Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
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APTC60VDAM45T1G | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A Technology: CoolMOS™; SJ-MOSFET Drain-source voltage: 600V Drain current: 38A Pulsed drain current: 130A Power dissipation: 250W Case: SP1 Gate-source voltage: ±20V On-state resistance: 45mΩ Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Topology: boost chopper x2; NTC thermistor Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTC80A10SCTG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Drain current: 32A Drain-source voltage: 800V Semiconductor structure: SiC diode/transistor Case: SP4 Type of module: MOSFET transistor Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor On-state resistance: 0.1Ω Pulsed drain current: 168A Power dissipation: 416W |
Produkt ist nicht verfügbar |
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APTC80A10SCTG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Drain current: 32A Drain-source voltage: 800V Semiconductor structure: SiC diode/transistor Case: SP4 Type of module: MOSFET transistor Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor On-state resistance: 0.1Ω Pulsed drain current: 168A Power dissipation: 416W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTC80A15SCTG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: SiC diode/transistor Case: SP4 Type of module: MOSFET transistor Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor On-state resistance: 0.15Ω Pulsed drain current: 112A Power dissipation: 277W |
Produkt ist nicht verfügbar |
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APTC80A15SCTG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: SiC diode/transistor Case: SP4 Type of module: MOSFET transistor Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor On-state resistance: 0.15Ω Pulsed drain current: 112A Power dissipation: 277W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTC80AM75SCG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Drain current: 43A Drain-source voltage: 800V Semiconductor structure: SiC diode/transistor Case: SP6C Type of module: MOSFET transistor Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge On-state resistance: 75mΩ Pulsed drain current: 232A Power dissipation: 568W |
Produkt ist nicht verfügbar |
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APTC80AM75SCG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Drain current: 43A Drain-source voltage: 800V Semiconductor structure: SiC diode/transistor Case: SP6C Type of module: MOSFET transistor Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge On-state resistance: 75mΩ Pulsed drain current: 232A Power dissipation: 568W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTC80DDA15T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: diode/transistor Case: SP3 Type of module: MOSFET transistor Technology: SJ-MOSFET Gate-source voltage: ±30V Topology: boost chopper x2; NTC thermistor On-state resistance: 0.15Ω Pulsed drain current: 110A Power dissipation: 277W |
Produkt ist nicht verfügbar |
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APTC80DDA15T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: diode/transistor Case: SP3 Type of module: MOSFET transistor Technology: SJ-MOSFET Gate-source voltage: ±30V Topology: boost chopper x2; NTC thermistor On-state resistance: 0.15Ω Pulsed drain current: 110A Power dissipation: 277W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTC80H15T1G | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: transistor/transistor Case: SP1 Type of module: MOSFET transistor Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor On-state resistance: 0.15Ω Pulsed drain current: 110A Power dissipation: 277W |
Produkt ist nicht verfügbar |
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APTC80H15T1G | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: transistor/transistor Case: SP1 Type of module: MOSFET transistor Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor On-state resistance: 0.15Ω Pulsed drain current: 110A Power dissipation: 277W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTC80H15T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 800V; 21A; SP3; Press-in PCB; 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: transistor/transistor Case: SP3 Type of module: MOSFET transistor Technology: SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor On-state resistance: 0.15Ω Pulsed drain current: 110A Power dissipation: 277W |
Produkt ist nicht verfügbar |
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APTC80H15T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 800V; 21A; SP3; Press-in PCB; 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: transistor/transistor Case: SP3 Type of module: MOSFET transistor Technology: SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor On-state resistance: 0.15Ω Pulsed drain current: 110A Power dissipation: 277W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTC80H29SCTG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Drain current: 11A Drain-source voltage: 800V Semiconductor structure: SiC diode/transistor Case: SP4 Type of module: MOSFET transistor Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor On-state resistance: 0.29Ω Pulsed drain current: 60A Power dissipation: 156W |
Produkt ist nicht verfügbar |
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APTC80H29SCTG | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Drain current: 11A Drain-source voltage: 800V Semiconductor structure: SiC diode/transistor Case: SP4 Type of module: MOSFET transistor Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor On-state resistance: 0.29Ω Pulsed drain current: 60A Power dissipation: 156W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTC80H29T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 11A Drain-source voltage: 800V Semiconductor structure: transistor/transistor Case: SP3 Type of module: MOSFET transistor Technology: SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor On-state resistance: 0.29Ω Pulsed drain current: 60A Power dissipation: 156W |
Produkt ist nicht verfügbar |
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APTC80H29T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 11A Drain-source voltage: 800V Semiconductor structure: transistor/transistor Case: SP3 Type of module: MOSFET transistor Technology: SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor On-state resistance: 0.29Ω Pulsed drain current: 60A Power dissipation: 156W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTC80TA15PG | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: transistor/transistor Case: SP6P Type of module: MOSFET transistor Technology: CoolMOS™ Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge On-state resistance: 0.15Ω Pulsed drain current: 110A Power dissipation: 277W |
Produkt ist nicht verfügbar |
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APTC80TA15PG | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: transistor/transistor Case: SP6P Type of module: MOSFET transistor Technology: CoolMOS™ Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge On-state resistance: 0.15Ω Pulsed drain current: 110A Power dissipation: 277W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTC80TDU15PG | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: transistor/transistor Case: SP6P Type of module: MOSFET transistor Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge On-state resistance: 0.15Ω Pulsed drain current: 110A Power dissipation: 277W |
Produkt ist nicht verfügbar |
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APTC80TDU15PG | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: transistor/transistor Case: SP6P Type of module: MOSFET transistor Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge On-state resistance: 0.15Ω Pulsed drain current: 110A Power dissipation: 277W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTCV40H60CT1G | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 600V; 27A; SP1; Ugs: ±20V; Idm: 115A Type of module: MOSFET/IGBT transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 27A Case: SP1 Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 83mΩ Pulsed drain current: 115A Power dissipation: 250W Technology: CoolMOS™; Field Stop; SiC; Trench Gate-source voltage: ±20V Mechanical mounting: screw Collector current: 50A |
Produkt ist nicht verfügbar |
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APTCV40H60CT1G | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 600V; 27A; SP1; Ugs: ±20V; Idm: 115A Type of module: MOSFET/IGBT transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 27A Case: SP1 Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 83mΩ Pulsed drain current: 115A Power dissipation: 250W Technology: CoolMOS™; Field Stop; SiC; Trench Gate-source voltage: ±20V Mechanical mounting: screw Collector current: 50A |
Produkt ist nicht verfügbar |
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APTCV50H60T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 600V; 38A; SP3; Press-in PCB; 290W Type of module: MOSFET/IGBT transistor Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Collector current: 50A Case: SP3 Electrical mounting: Press-in PCB Power dissipation: 290W Technology: Field Stop; SJ-MOSFET; Trench Mechanical mounting: screw Gate-source voltage: ±20V On-state resistance: 45mΩ Pulsed drain current: 130A Drain current: 38A Drain-source voltage: 600V |
Produkt ist nicht verfügbar |
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APTCV50H60T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module; transistor/transistor; 600V; 38A; SP3; Press-in PCB; 290W Type of module: MOSFET/IGBT transistor Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Collector current: 50A Case: SP3 Electrical mounting: Press-in PCB Power dissipation: 290W Technology: Field Stop; SJ-MOSFET; Trench Mechanical mounting: screw Gate-source voltage: ±20V On-state resistance: 45mΩ Pulsed drain current: 130A Drain current: 38A Drain-source voltage: 600V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTCV60HM45BC20T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W Mechanical mounting: screw Electrical mounting: Press-in PCB Case: SP3F Gate-source voltage: ±20V Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor On-state resistance: 45mΩ Topology: boost chopper; H-bridge; NTC thermistor Pulsed drain current: 130A Power dissipation: 250W Technology: CoolMOS™; Field Stop; SiC; Trench Drain current: 38A Drain-source voltage: 600V |
Produkt ist nicht verfügbar |
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APTCV60HM45BC20T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W Mechanical mounting: screw Electrical mounting: Press-in PCB Case: SP3F Gate-source voltage: ±20V Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor On-state resistance: 45mΩ Topology: boost chopper; H-bridge; NTC thermistor Pulsed drain current: 130A Power dissipation: 250W Technology: CoolMOS™; Field Stop; SiC; Trench Drain current: 38A Drain-source voltage: 600V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTCV60HM45BT3G | MICROCHIP (MICROSEMI) |
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APTCV60HM45RCT3G | MICROCHIP (MICROSEMI) |
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APTCV60HM45RT3G | MICROCHIP (MICROSEMI) |
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APTCV60TLM24T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A Mechanical mounting: screw Power dissipation: 462W Electrical mounting: Press-in PCB Type of module: MOSFET/IGBT transistor Technology: Field Stop; SJ-MOSFET; Trench Gate-source voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase Pulsed drain current: 260A Case: SP3F Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 70A Collector current: 75A On-state resistance: 24mΩ |
Produkt ist nicht verfügbar |
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APTCV60TLM24T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A Mechanical mounting: screw Power dissipation: 462W Electrical mounting: Press-in PCB Type of module: MOSFET/IGBT transistor Technology: Field Stop; SJ-MOSFET; Trench Gate-source voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase Pulsed drain current: 260A Case: SP3F Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 70A Collector current: 75A On-state resistance: 24mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTCV60TLM45T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A Type of module: MOSFET/IGBT transistor On-state resistance: 45mΩ Power dissipation: 250W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Field Stop; SJ-MOSFET; Trench Gate-source voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase Pulsed drain current: 130A Case: SP3F Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 38A Collector current: 75A |
Produkt ist nicht verfügbar |
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APTCV60TLM45T3G | MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A Type of module: MOSFET/IGBT transistor On-state resistance: 45mΩ Power dissipation: 250W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Field Stop; SJ-MOSFET; Trench Gate-source voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase Pulsed drain current: 130A Case: SP3F Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 38A Collector current: 75A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTCV60TLM70T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 29A; SP3; Ugs: ±20V; Press-in PCB Pulsed drain current: 160A Power dissipation: 250W Technology: Field Stop; SJ-MOSFET; Trench Drain current: 29A Drain-source voltage: 600V Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET/IGBT transistor Semiconductor structure: diode/transistor Case: SP3 On-state resistance: 70mΩ Collector current: 50A Gate-source voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase |
Produkt ist nicht verfügbar |
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APTCV60TLM70T3G | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 29A; SP3; Ugs: ±20V; Press-in PCB Pulsed drain current: 160A Power dissipation: 250W Technology: Field Stop; SJ-MOSFET; Trench Drain current: 29A Drain-source voltage: 600V Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: MOSFET/IGBT transistor Semiconductor structure: diode/transistor Case: SP3 On-state resistance: 70mΩ Collector current: 50A Gate-source voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTCV60TLM99T3G | MICROCHIP (MICROSEMI) |
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APTDF100H100G | MICROCHIP (MICROSEMI) |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 100A; Ifsm: 500A Max. forward impulse current: 0.5kA Load current: 100A Kind of package: bulk Electrical mounting: FASTON connectors Max. forward voltage: 2.7V Mechanical mounting: screw Version: module Max. off-state voltage: 1kV Technology: FRED Type of bridge rectifier: single-phase Case: SP4 |
Produkt ist nicht verfügbar |
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APTDF100H100G | MICROCHIP (MICROSEMI) |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 100A; Ifsm: 500A Max. forward impulse current: 0.5kA Load current: 100A Kind of package: bulk Electrical mounting: FASTON connectors Max. forward voltage: 2.7V Mechanical mounting: screw Version: module Max. off-state voltage: 1kV Technology: FRED Type of bridge rectifier: single-phase Case: SP4 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTDF100H20G | MICROCHIP (MICROSEMI) |
![]() Description: Bridge rectifier: single-phase; Urmax: 200V; If: 100A; Ifsm: 500A Case: SP4 Kind of package: bulk Max. forward impulse current: 0.5kA Electrical mounting: FASTON connectors Mechanical mounting: screw Version: module Technology: FRED Type of bridge rectifier: single-phase Max. off-state voltage: 200V Max. forward voltage: 1.4V Load current: 100A |
Produkt ist nicht verfügbar |
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APTDF100H20G | MICROCHIP (MICROSEMI) |
![]() Description: Bridge rectifier: single-phase; Urmax: 200V; If: 100A; Ifsm: 500A Case: SP4 Kind of package: bulk Max. forward impulse current: 0.5kA Electrical mounting: FASTON connectors Mechanical mounting: screw Version: module Technology: FRED Type of bridge rectifier: single-phase Max. off-state voltage: 200V Max. forward voltage: 1.4V Load current: 100A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTDF100H601G | MICROCHIP (MICROSEMI) |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; Ifsm: 500A Case: SP1 Max. forward impulse current: 0.5kA Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Load current: 100A Kind of package: bulk Type of bridge rectifier: single-phase Max. forward voltage: 2V Version: module Technology: FRED Mechanical mounting: screw Leads: Ø1,2±0,1mm |
Produkt ist nicht verfügbar |
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APTDF100H601G | MICROCHIP (MICROSEMI) |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; Ifsm: 500A Case: SP1 Max. forward impulse current: 0.5kA Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Load current: 100A Kind of package: bulk Type of bridge rectifier: single-phase Max. forward voltage: 2V Version: module Technology: FRED Mechanical mounting: screw Leads: Ø1,2±0,1mm Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTDF200H100G | MICROCHIP (MICROSEMI) |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 200A; Ifsm: 1.5kA Max. forward impulse current: 1.5kA Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Version: module Technology: FRED Type of bridge rectifier: single-phase Case: SP6 Leads: M5 screws Max. off-state voltage: 1kV Max. forward voltage: 2.7V Load current: 200A |
Produkt ist nicht verfügbar |
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APTDF200H100G | MICROCHIP (MICROSEMI) |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 200A; Ifsm: 1.5kA Max. forward impulse current: 1.5kA Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Version: module Technology: FRED Type of bridge rectifier: single-phase Case: SP6 Leads: M5 screws Max. off-state voltage: 1kV Max. forward voltage: 2.7V Load current: 200A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTDF200H120G | MICROCHIP (MICROSEMI) |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 200A; Ifsm: 1.5kA Max. forward impulse current: 1.5kA Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Version: module Technology: FRED Type of bridge rectifier: single-phase Case: SP6 Leads: M5 screws Max. off-state voltage: 1.2kV Max. forward voltage: 3V Load current: 200A |
Produkt ist nicht verfügbar |
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APTDF200H120G | MICROCHIP (MICROSEMI) |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 200A; Ifsm: 1.5kA Max. forward impulse current: 1.5kA Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Version: module Technology: FRED Type of bridge rectifier: single-phase Case: SP6 Leads: M5 screws Max. off-state voltage: 1.2kV Max. forward voltage: 3V Load current: 200A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTDF200H170G | MICROCHIP (MICROSEMI) |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 200A; Ifsm: 600A Max. forward impulse current: 600A Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Version: module Technology: FRED Type of bridge rectifier: single-phase Case: SP6 Leads: M5 screws Max. off-state voltage: 1.7kV Max. forward voltage: 2.5V Load current: 200A |
Produkt ist nicht verfügbar |
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APTDF200H170G | MICROCHIP (MICROSEMI) |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 200A; Ifsm: 600A Max. forward impulse current: 600A Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Version: module Technology: FRED Type of bridge rectifier: single-phase Case: SP6 Leads: M5 screws Max. off-state voltage: 1.7kV Max. forward voltage: 2.5V Load current: 200A Anzahl je Verpackung: 1 Stücke |
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APTDF200H60G | MICROCHIP (MICROSEMI) |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 200A; Ifsm: 1.5kA Max. forward impulse current: 1.5kA Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Version: module Technology: FRED Type of bridge rectifier: single-phase Case: SP6 Leads: M5 screws Max. off-state voltage: 0.6kV Max. forward voltage: 2V Load current: 200A |
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APTDF200H60G | MICROCHIP (MICROSEMI) |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 200A; Ifsm: 1.5kA Max. forward impulse current: 1.5kA Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Version: module Technology: FRED Type of bridge rectifier: single-phase Case: SP6 Leads: M5 screws Max. off-state voltage: 0.6kV Max. forward voltage: 2V Load current: 200A Anzahl je Verpackung: 1 Stücke |
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APTDF30H1201G | MICROCHIP (MICROSEMI) |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 30A; Ifsm: 210A Mechanical mounting: screw Leads: Ø1,2±0,1mm Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Load current: 30A Kind of package: bulk Case: SP1 Type of bridge rectifier: single-phase Max. forward impulse current: 210A Max. forward voltage: 3.2V Version: module Technology: FRED |
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APTDF30H1201G | MICROCHIP (MICROSEMI) |
![]() Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 30A; Ifsm: 210A Mechanical mounting: screw Leads: Ø1,2±0,1mm Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Load current: 30A Kind of package: bulk Case: SP1 Type of bridge rectifier: single-phase Max. forward impulse current: 210A Max. forward voltage: 3.2V Version: module Technology: FRED Anzahl je Verpackung: 1 Stücke |
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APTDF30H601G | MICROCHIP (MICROSEMI) |
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APTDF400AA100G | MICROCHIP (MICROSEMI) |
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APTDF400AA120G | MICROCHIP (MICROSEMI) |
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APTDF400AA170G | MICROCHIP (MICROSEMI) |
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APTDF400AA20G | MICROCHIP (MICROSEMI) |
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APTDF400AA60G | MICROCHIP (MICROSEMI) |
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Produkt ist nicht verfügbar |
APTC60VDAM45T1G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A
Technology: CoolMOS™; SJ-MOSFET
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 130A
Power dissipation: 250W
Case: SP1
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: boost chopper x2; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A
Technology: CoolMOS™; SJ-MOSFET
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 130A
Power dissipation: 250W
Case: SP1
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: boost chopper x2; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
APTC60VDAM45T1G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A
Technology: CoolMOS™; SJ-MOSFET
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 130A
Power dissipation: 250W
Case: SP1
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: boost chopper x2; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A
Technology: CoolMOS™; SJ-MOSFET
Drain-source voltage: 600V
Drain current: 38A
Pulsed drain current: 130A
Power dissipation: 250W
Case: SP1
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Topology: boost chopper x2; NTC thermistor
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTC80A10SCTG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 32A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP4
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
On-state resistance: 0.1Ω
Pulsed drain current: 168A
Power dissipation: 416W
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 32A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP4
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
On-state resistance: 0.1Ω
Pulsed drain current: 168A
Power dissipation: 416W
Produkt ist nicht verfügbar
APTC80A10SCTG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 32A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP4
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
On-state resistance: 0.1Ω
Pulsed drain current: 168A
Power dissipation: 416W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 32A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP4
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
On-state resistance: 0.1Ω
Pulsed drain current: 168A
Power dissipation: 416W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTC80A15SCTG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP4
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
On-state resistance: 0.15Ω
Pulsed drain current: 112A
Power dissipation: 277W
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP4
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
On-state resistance: 0.15Ω
Pulsed drain current: 112A
Power dissipation: 277W
Produkt ist nicht verfügbar
APTC80A15SCTG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP4
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
On-state resistance: 0.15Ω
Pulsed drain current: 112A
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP4
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
On-state resistance: 0.15Ω
Pulsed drain current: 112A
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTC80AM75SCG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 43A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP6C
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
On-state resistance: 75mΩ
Pulsed drain current: 232A
Power dissipation: 568W
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 43A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP6C
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
On-state resistance: 75mΩ
Pulsed drain current: 232A
Power dissipation: 568W
Produkt ist nicht verfügbar
APTC80AM75SCG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 43A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP6C
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
On-state resistance: 75mΩ
Pulsed drain current: 232A
Power dissipation: 568W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 43A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP6C
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
On-state resistance: 75mΩ
Pulsed drain current: 232A
Power dissipation: 568W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTC80DDA15T3G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: diode/transistor
Case: SP3
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: boost chopper x2; NTC thermistor
On-state resistance: 0.15Ω
Pulsed drain current: 110A
Power dissipation: 277W
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: diode/transistor
Case: SP3
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: boost chopper x2; NTC thermistor
On-state resistance: 0.15Ω
Pulsed drain current: 110A
Power dissipation: 277W
Produkt ist nicht verfügbar
APTC80DDA15T3G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: diode/transistor
Case: SP3
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: boost chopper x2; NTC thermistor
On-state resistance: 0.15Ω
Pulsed drain current: 110A
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: diode/transistor
Case: SP3
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: boost chopper x2; NTC thermistor
On-state resistance: 0.15Ω
Pulsed drain current: 110A
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTC80H15T1G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP1
Type of module: MOSFET transistor
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
On-state resistance: 0.15Ω
Pulsed drain current: 110A
Power dissipation: 277W
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP1
Type of module: MOSFET transistor
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
On-state resistance: 0.15Ω
Pulsed drain current: 110A
Power dissipation: 277W
Produkt ist nicht verfügbar
APTC80H15T1G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP1
Type of module: MOSFET transistor
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
On-state resistance: 0.15Ω
Pulsed drain current: 110A
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP1
Type of module: MOSFET transistor
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
On-state resistance: 0.15Ω
Pulsed drain current: 110A
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTC80H15T3G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP3; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP3
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
On-state resistance: 0.15Ω
Pulsed drain current: 110A
Power dissipation: 277W
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP3; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP3
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
On-state resistance: 0.15Ω
Pulsed drain current: 110A
Power dissipation: 277W
Produkt ist nicht verfügbar
APTC80H15T3G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP3; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP3
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
On-state resistance: 0.15Ω
Pulsed drain current: 110A
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP3; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP3
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
On-state resistance: 0.15Ω
Pulsed drain current: 110A
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTC80H29SCTG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 11A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP4
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
On-state resistance: 0.29Ω
Pulsed drain current: 60A
Power dissipation: 156W
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 11A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP4
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
On-state resistance: 0.29Ω
Pulsed drain current: 60A
Power dissipation: 156W
Produkt ist nicht verfügbar
APTC80H29SCTG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 11A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP4
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
On-state resistance: 0.29Ω
Pulsed drain current: 60A
Power dissipation: 156W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 11A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP4
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
On-state resistance: 0.29Ω
Pulsed drain current: 60A
Power dissipation: 156W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTC80H29T3G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 11A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP3
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
On-state resistance: 0.29Ω
Pulsed drain current: 60A
Power dissipation: 156W
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 11A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP3
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
On-state resistance: 0.29Ω
Pulsed drain current: 60A
Power dissipation: 156W
Produkt ist nicht verfügbar
APTC80H29T3G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 11A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP3
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
On-state resistance: 0.29Ω
Pulsed drain current: 60A
Power dissipation: 156W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 11A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP3
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
On-state resistance: 0.29Ω
Pulsed drain current: 60A
Power dissipation: 156W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTC80TA15PG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP6P
Type of module: MOSFET transistor
Technology: CoolMOS™
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
On-state resistance: 0.15Ω
Pulsed drain current: 110A
Power dissipation: 277W
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP6P
Type of module: MOSFET transistor
Technology: CoolMOS™
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
On-state resistance: 0.15Ω
Pulsed drain current: 110A
Power dissipation: 277W
Produkt ist nicht verfügbar
APTC80TA15PG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP6P
Type of module: MOSFET transistor
Technology: CoolMOS™
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
On-state resistance: 0.15Ω
Pulsed drain current: 110A
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP6P
Type of module: MOSFET transistor
Technology: CoolMOS™
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
On-state resistance: 0.15Ω
Pulsed drain current: 110A
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTC80TDU15PG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP6P
Type of module: MOSFET transistor
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
On-state resistance: 0.15Ω
Pulsed drain current: 110A
Power dissipation: 277W
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP6P
Type of module: MOSFET transistor
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
On-state resistance: 0.15Ω
Pulsed drain current: 110A
Power dissipation: 277W
Produkt ist nicht verfügbar
APTC80TDU15PG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP6P
Type of module: MOSFET transistor
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
On-state resistance: 0.15Ω
Pulsed drain current: 110A
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP6P
Type of module: MOSFET transistor
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
On-state resistance: 0.15Ω
Pulsed drain current: 110A
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTCV40H60CT1G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 27A; SP1; Ugs: ±20V; Idm: 115A
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 27A
Case: SP1
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 83mΩ
Pulsed drain current: 115A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Gate-source voltage: ±20V
Mechanical mounting: screw
Collector current: 50A
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 27A; SP1; Ugs: ±20V; Idm: 115A
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 27A
Case: SP1
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 83mΩ
Pulsed drain current: 115A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Gate-source voltage: ±20V
Mechanical mounting: screw
Collector current: 50A
Produkt ist nicht verfügbar
APTCV40H60CT1G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 27A; SP1; Ugs: ±20V; Idm: 115A
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 27A
Case: SP1
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 83mΩ
Pulsed drain current: 115A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Gate-source voltage: ±20V
Mechanical mounting: screw
Collector current: 50A
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 27A; SP1; Ugs: ±20V; Idm: 115A
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 27A
Case: SP1
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 83mΩ
Pulsed drain current: 115A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Gate-source voltage: ±20V
Mechanical mounting: screw
Collector current: 50A
Produkt ist nicht verfügbar
APTCV50H60T3G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 38A; SP3; Press-in PCB; 290W
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Collector current: 50A
Case: SP3
Electrical mounting: Press-in PCB
Power dissipation: 290W
Technology: Field Stop; SJ-MOSFET; Trench
Mechanical mounting: screw
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Pulsed drain current: 130A
Drain current: 38A
Drain-source voltage: 600V
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 38A; SP3; Press-in PCB; 290W
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Collector current: 50A
Case: SP3
Electrical mounting: Press-in PCB
Power dissipation: 290W
Technology: Field Stop; SJ-MOSFET; Trench
Mechanical mounting: screw
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Pulsed drain current: 130A
Drain current: 38A
Drain-source voltage: 600V
Produkt ist nicht verfügbar
APTCV50H60T3G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 38A; SP3; Press-in PCB; 290W
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Collector current: 50A
Case: SP3
Electrical mounting: Press-in PCB
Power dissipation: 290W
Technology: Field Stop; SJ-MOSFET; Trench
Mechanical mounting: screw
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Pulsed drain current: 130A
Drain current: 38A
Drain-source voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 38A; SP3; Press-in PCB; 290W
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Collector current: 50A
Case: SP3
Electrical mounting: Press-in PCB
Power dissipation: 290W
Technology: Field Stop; SJ-MOSFET; Trench
Mechanical mounting: screw
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Pulsed drain current: 130A
Drain current: 38A
Drain-source voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTCV60HM45BC20T3G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP3F
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
On-state resistance: 45mΩ
Topology: boost chopper; H-bridge; NTC thermistor
Pulsed drain current: 130A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Drain current: 38A
Drain-source voltage: 600V
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP3F
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
On-state resistance: 45mΩ
Topology: boost chopper; H-bridge; NTC thermistor
Pulsed drain current: 130A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Drain current: 38A
Drain-source voltage: 600V
Produkt ist nicht verfügbar
APTCV60HM45BC20T3G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP3F
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
On-state resistance: 45mΩ
Topology: boost chopper; H-bridge; NTC thermistor
Pulsed drain current: 130A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Drain current: 38A
Drain-source voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP3F
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
On-state resistance: 45mΩ
Topology: boost chopper; H-bridge; NTC thermistor
Pulsed drain current: 130A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Drain current: 38A
Drain-source voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTCV60HM45BT3G |
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Hersteller: MICROCHIP (MICROSEMI)
APTCV60HM45BT3G Transistor modules MOSFET
APTCV60HM45BT3G Transistor modules MOSFET
Produkt ist nicht verfügbar
APTCV60HM45RCT3G |
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Hersteller: MICROCHIP (MICROSEMI)
APTCV60HM45RCT3G Transistor modules MOSFET
APTCV60HM45RCT3G Transistor modules MOSFET
Produkt ist nicht verfügbar
APTCV60HM45RT3G |
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Hersteller: MICROCHIP (MICROSEMI)
APTCV60HM45RT3G Transistor modules MOSFET
APTCV60HM45RT3G Transistor modules MOSFET
Produkt ist nicht verfügbar
APTCV60TLM24T3G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Mechanical mounting: screw
Power dissipation: 462W
Electrical mounting: Press-in PCB
Type of module: MOSFET/IGBT transistor
Technology: Field Stop; SJ-MOSFET; Trench
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 260A
Case: SP3F
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 70A
Collector current: 75A
On-state resistance: 24mΩ
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Mechanical mounting: screw
Power dissipation: 462W
Electrical mounting: Press-in PCB
Type of module: MOSFET/IGBT transistor
Technology: Field Stop; SJ-MOSFET; Trench
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 260A
Case: SP3F
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 70A
Collector current: 75A
On-state resistance: 24mΩ
Produkt ist nicht verfügbar
APTCV60TLM24T3G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Mechanical mounting: screw
Power dissipation: 462W
Electrical mounting: Press-in PCB
Type of module: MOSFET/IGBT transistor
Technology: Field Stop; SJ-MOSFET; Trench
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 260A
Case: SP3F
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 70A
Collector current: 75A
On-state resistance: 24mΩ
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Mechanical mounting: screw
Power dissipation: 462W
Electrical mounting: Press-in PCB
Type of module: MOSFET/IGBT transistor
Technology: Field Stop; SJ-MOSFET; Trench
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 260A
Case: SP3F
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 70A
Collector current: 75A
On-state resistance: 24mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTCV60TLM45T3G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A
Type of module: MOSFET/IGBT transistor
On-state resistance: 45mΩ
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; SJ-MOSFET; Trench
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 130A
Case: SP3F
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 38A
Collector current: 75A
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A
Type of module: MOSFET/IGBT transistor
On-state resistance: 45mΩ
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; SJ-MOSFET; Trench
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 130A
Case: SP3F
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 38A
Collector current: 75A
Produkt ist nicht verfügbar
APTCV60TLM45T3G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A
Type of module: MOSFET/IGBT transistor
On-state resistance: 45mΩ
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; SJ-MOSFET; Trench
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 130A
Case: SP3F
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 38A
Collector current: 75A
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A
Type of module: MOSFET/IGBT transistor
On-state resistance: 45mΩ
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; SJ-MOSFET; Trench
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 130A
Case: SP3F
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 38A
Collector current: 75A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTCV60TLM70T3G |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3; Ugs: ±20V; Press-in PCB
Pulsed drain current: 160A
Power dissipation: 250W
Technology: Field Stop; SJ-MOSFET; Trench
Drain current: 29A
Drain-source voltage: 600V
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET/IGBT transistor
Semiconductor structure: diode/transistor
Case: SP3
On-state resistance: 70mΩ
Collector current: 50A
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3; Ugs: ±20V; Press-in PCB
Pulsed drain current: 160A
Power dissipation: 250W
Technology: Field Stop; SJ-MOSFET; Trench
Drain current: 29A
Drain-source voltage: 600V
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET/IGBT transistor
Semiconductor structure: diode/transistor
Case: SP3
On-state resistance: 70mΩ
Collector current: 50A
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Produkt ist nicht verfügbar
APTCV60TLM70T3G |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3; Ugs: ±20V; Press-in PCB
Pulsed drain current: 160A
Power dissipation: 250W
Technology: Field Stop; SJ-MOSFET; Trench
Drain current: 29A
Drain-source voltage: 600V
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET/IGBT transistor
Semiconductor structure: diode/transistor
Case: SP3
On-state resistance: 70mΩ
Collector current: 50A
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3; Ugs: ±20V; Press-in PCB
Pulsed drain current: 160A
Power dissipation: 250W
Technology: Field Stop; SJ-MOSFET; Trench
Drain current: 29A
Drain-source voltage: 600V
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: MOSFET/IGBT transistor
Semiconductor structure: diode/transistor
Case: SP3
On-state resistance: 70mΩ
Collector current: 50A
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTCV60TLM99T3G |
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Hersteller: MICROCHIP (MICROSEMI)
APTCV60TLM99T3G Transistor modules MOSFET
APTCV60TLM99T3G Transistor modules MOSFET
Produkt ist nicht verfügbar
APTDF100H100G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 100A; Ifsm: 500A
Max. forward impulse current: 0.5kA
Load current: 100A
Kind of package: bulk
Electrical mounting: FASTON connectors
Max. forward voltage: 2.7V
Mechanical mounting: screw
Version: module
Max. off-state voltage: 1kV
Technology: FRED
Type of bridge rectifier: single-phase
Case: SP4
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 100A; Ifsm: 500A
Max. forward impulse current: 0.5kA
Load current: 100A
Kind of package: bulk
Electrical mounting: FASTON connectors
Max. forward voltage: 2.7V
Mechanical mounting: screw
Version: module
Max. off-state voltage: 1kV
Technology: FRED
Type of bridge rectifier: single-phase
Case: SP4
Produkt ist nicht verfügbar
APTDF100H100G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 100A; Ifsm: 500A
Max. forward impulse current: 0.5kA
Load current: 100A
Kind of package: bulk
Electrical mounting: FASTON connectors
Max. forward voltage: 2.7V
Mechanical mounting: screw
Version: module
Max. off-state voltage: 1kV
Technology: FRED
Type of bridge rectifier: single-phase
Case: SP4
Anzahl je Verpackung: 1 Stücke
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 100A; Ifsm: 500A
Max. forward impulse current: 0.5kA
Load current: 100A
Kind of package: bulk
Electrical mounting: FASTON connectors
Max. forward voltage: 2.7V
Mechanical mounting: screw
Version: module
Max. off-state voltage: 1kV
Technology: FRED
Type of bridge rectifier: single-phase
Case: SP4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTDF100H20G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 100A; Ifsm: 500A
Case: SP4
Kind of package: bulk
Max. forward impulse current: 0.5kA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Max. forward voltage: 1.4V
Load current: 100A
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 100A; Ifsm: 500A
Case: SP4
Kind of package: bulk
Max. forward impulse current: 0.5kA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Max. forward voltage: 1.4V
Load current: 100A
Produkt ist nicht verfügbar
APTDF100H20G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 100A; Ifsm: 500A
Case: SP4
Kind of package: bulk
Max. forward impulse current: 0.5kA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Max. forward voltage: 1.4V
Load current: 100A
Anzahl je Verpackung: 1 Stücke
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 100A; Ifsm: 500A
Case: SP4
Kind of package: bulk
Max. forward impulse current: 0.5kA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Max. forward voltage: 1.4V
Load current: 100A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTDF100H601G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; Ifsm: 500A
Case: SP1
Max. forward impulse current: 0.5kA
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; Ifsm: 500A
Case: SP1
Max. forward impulse current: 0.5kA
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
Produkt ist nicht verfügbar
APTDF100H601G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; Ifsm: 500A
Case: SP1
Max. forward impulse current: 0.5kA
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
Anzahl je Verpackung: 1 Stücke
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; Ifsm: 500A
Case: SP1
Max. forward impulse current: 0.5kA
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Load current: 100A
Kind of package: bulk
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Version: module
Technology: FRED
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTDF200H100G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 200A; Ifsm: 1.5kA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Case: SP6
Leads: M5 screws
Max. off-state voltage: 1kV
Max. forward voltage: 2.7V
Load current: 200A
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 200A; Ifsm: 1.5kA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Case: SP6
Leads: M5 screws
Max. off-state voltage: 1kV
Max. forward voltage: 2.7V
Load current: 200A
Produkt ist nicht verfügbar
APTDF200H100G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 200A; Ifsm: 1.5kA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Case: SP6
Leads: M5 screws
Max. off-state voltage: 1kV
Max. forward voltage: 2.7V
Load current: 200A
Anzahl je Verpackung: 1 Stücke
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 200A; Ifsm: 1.5kA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Case: SP6
Leads: M5 screws
Max. off-state voltage: 1kV
Max. forward voltage: 2.7V
Load current: 200A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTDF200H120G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 200A; Ifsm: 1.5kA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Case: SP6
Leads: M5 screws
Max. off-state voltage: 1.2kV
Max. forward voltage: 3V
Load current: 200A
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 200A; Ifsm: 1.5kA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Case: SP6
Leads: M5 screws
Max. off-state voltage: 1.2kV
Max. forward voltage: 3V
Load current: 200A
Produkt ist nicht verfügbar
APTDF200H120G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 200A; Ifsm: 1.5kA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Case: SP6
Leads: M5 screws
Max. off-state voltage: 1.2kV
Max. forward voltage: 3V
Load current: 200A
Anzahl je Verpackung: 1 Stücke
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 200A; Ifsm: 1.5kA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Case: SP6
Leads: M5 screws
Max. off-state voltage: 1.2kV
Max. forward voltage: 3V
Load current: 200A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTDF200H170G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 200A; Ifsm: 600A
Max. forward impulse current: 600A
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Case: SP6
Leads: M5 screws
Max. off-state voltage: 1.7kV
Max. forward voltage: 2.5V
Load current: 200A
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 200A; Ifsm: 600A
Max. forward impulse current: 600A
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Case: SP6
Leads: M5 screws
Max. off-state voltage: 1.7kV
Max. forward voltage: 2.5V
Load current: 200A
Produkt ist nicht verfügbar
APTDF200H170G |
![]() |
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 200A; Ifsm: 600A
Max. forward impulse current: 600A
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Case: SP6
Leads: M5 screws
Max. off-state voltage: 1.7kV
Max. forward voltage: 2.5V
Load current: 200A
Anzahl je Verpackung: 1 Stücke
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.7kV; If: 200A; Ifsm: 600A
Max. forward impulse current: 600A
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Case: SP6
Leads: M5 screws
Max. off-state voltage: 1.7kV
Max. forward voltage: 2.5V
Load current: 200A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTDF200H60G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 200A; Ifsm: 1.5kA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Case: SP6
Leads: M5 screws
Max. off-state voltage: 0.6kV
Max. forward voltage: 2V
Load current: 200A
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 200A; Ifsm: 1.5kA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Case: SP6
Leads: M5 screws
Max. off-state voltage: 0.6kV
Max. forward voltage: 2V
Load current: 200A
Produkt ist nicht verfügbar
APTDF200H60G |
![]() |
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 200A; Ifsm: 1.5kA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Case: SP6
Leads: M5 screws
Max. off-state voltage: 0.6kV
Max. forward voltage: 2V
Load current: 200A
Anzahl je Verpackung: 1 Stücke
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 200A; Ifsm: 1.5kA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Technology: FRED
Type of bridge rectifier: single-phase
Case: SP6
Leads: M5 screws
Max. off-state voltage: 0.6kV
Max. forward voltage: 2V
Load current: 200A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTDF30H1201G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 30A; Ifsm: 210A
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Load current: 30A
Kind of package: bulk
Case: SP1
Type of bridge rectifier: single-phase
Max. forward impulse current: 210A
Max. forward voltage: 3.2V
Version: module
Technology: FRED
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 30A; Ifsm: 210A
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Load current: 30A
Kind of package: bulk
Case: SP1
Type of bridge rectifier: single-phase
Max. forward impulse current: 210A
Max. forward voltage: 3.2V
Version: module
Technology: FRED
Produkt ist nicht verfügbar
APTDF30H1201G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 30A; Ifsm: 210A
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Load current: 30A
Kind of package: bulk
Case: SP1
Type of bridge rectifier: single-phase
Max. forward impulse current: 210A
Max. forward voltage: 3.2V
Version: module
Technology: FRED
Anzahl je Verpackung: 1 Stücke
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 30A; Ifsm: 210A
Mechanical mounting: screw
Leads: Ø1,2±0,1mm
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Load current: 30A
Kind of package: bulk
Case: SP1
Type of bridge rectifier: single-phase
Max. forward impulse current: 210A
Max. forward voltage: 3.2V
Version: module
Technology: FRED
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTDF30H601G |
![]() |
Hersteller: MICROCHIP (MICROSEMI)
APTDF30H601G Sing. ph. diode bridge rectif. - others
APTDF30H601G Sing. ph. diode bridge rectif. - others
Produkt ist nicht verfügbar
APTDF400AA100G |
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Hersteller: MICROCHIP (MICROSEMI)
APTDF400AA100G Diode modules
APTDF400AA100G Diode modules
Produkt ist nicht verfügbar
APTDF400AA120G |
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Hersteller: MICROCHIP (MICROSEMI)
APTDF400AA120G Diode modules
APTDF400AA120G Diode modules
Produkt ist nicht verfügbar
APTDF400AA170G |
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Hersteller: MICROCHIP (MICROSEMI)
APTDF400AA170G Diode modules
APTDF400AA170G Diode modules
Produkt ist nicht verfügbar
APTDF400AA20G |
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Hersteller: MICROCHIP (MICROSEMI)
APTDF400AA20G Diode modules
APTDF400AA20G Diode modules
Produkt ist nicht verfügbar
APTDF400AA60G |
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Hersteller: MICROCHIP (MICROSEMI)
APTDF400AA60G Diode modules
APTDF400AA60G Diode modules
Produkt ist nicht verfügbar