APTCV60TLM24T3G Microchip Technology
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Technische Details APTCV60TLM24T3G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A, Mechanical mounting: screw, Power dissipation: 462W, Electrical mounting: Press-in PCB, Type of module: MOSFET/IGBT transistor, Technology: Field Stop; SJ-MOSFET; Trench, Gate-source voltage: ±20V, Topology: NTC thermistor; three-level inverter; single-phase, Pulsed drain current: 260A, Case: SP3F, Semiconductor structure: diode/transistor, Drain-source voltage: 600V, Drain current: 70A, Collector current: 75A, On-state resistance: 24mΩ, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTCV60TLM24T3G
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTCV60TLM24T3G | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A Mechanical mounting: screw Power dissipation: 462W Electrical mounting: Press-in PCB Type of module: MOSFET/IGBT transistor Technology: Field Stop; SJ-MOSFET; Trench Gate-source voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase Pulsed drain current: 260A Case: SP3F Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 70A Collector current: 75A On-state resistance: 24mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTCV60TLM24T3G | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V |
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APTCV60TLM24T3G | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APTCV60TLM24T3G | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A Mechanical mounting: screw Power dissipation: 462W Electrical mounting: Press-in PCB Type of module: MOSFET/IGBT transistor Technology: Field Stop; SJ-MOSFET; Trench Gate-source voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase Pulsed drain current: 260A Case: SP3F Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 70A Collector current: 75A On-state resistance: 24mΩ |
Produkt ist nicht verfügbar |