Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (140810) > Seite 2345 nach 2347
Foto | Bezeichnung | Hersteller | Beschreibung |
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CY15B004J-SXA | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8 Operating temperature: -40...85°C Mounting: SMD Supply voltage: 2.7...3.65V DC Interface: I2C Memory: 4kb FRAM Case: SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory organisation: 512x8bit Clock frequency: 1MHz |
Produkt ist nicht verfügbar |
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CY15B004J-SXAT | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8 Operating temperature: -40...85°C Mounting: SMD Supply voltage: 2.7...3.65V DC Interface: I2C Kind of package: reel; tape Memory: 4kb FRAM Case: SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory organisation: 512x8bit Clock frequency: 1MHz |
Produkt ist nicht verfügbar |
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CY15B004J-SXE | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8 Operating temperature: -40...125°C Mounting: SMD Supply voltage: 3...3.6V DC Interface: I2C Memory: 4kb FRAM Case: SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory organisation: 512x8bit Clock frequency: 3.4MHz |
Produkt ist nicht verfügbar |
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CY15B004J-SXET | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8 Operating temperature: -40...125°C Mounting: SMD Supply voltage: 3...3.6V DC Interface: I2C Kind of package: reel; tape Memory: 4kb FRAM Case: SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory organisation: 512x8bit Clock frequency: 3.4MHz |
Produkt ist nicht verfügbar |
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CY15B004Q-SXET | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SOIC8 Operating temperature: -40...125°C Mounting: SMD Supply voltage: 3...3.6V DC Interface: SPI Kind of package: reel; tape Memory: 4kb FRAM Case: SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory organisation: 512x8bit Clock frequency: 16MHz |
Produkt ist nicht verfügbar |
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S27KS0642GABHV023 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C Mounting: SMD Case: FBGA24 Operating temperature: -40...105°C Kind of package: reel; tape Memory: 64Mb DRAM Supply voltage: 1.7...2V DC Type of integrated circuit: DRAM memory Interface: HyperBus Kind of memory: DRAM Access time: 35ns Clock frequency: 200MHz |
Produkt ist nicht verfügbar |
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S70KS1282GABHV023 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C Mounting: SMD Case: FBGA24 Operating temperature: -40...105°C Kind of package: reel; tape Memory: 128Mb DRAM Supply voltage: 1.7...2V DC Type of integrated circuit: DRAM memory Interface: HyperBus Kind of memory: DRAM Access time: 35ns Clock frequency: 200MHz |
Produkt ist nicht verfügbar |
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S80KS5122GABHV023 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C Mounting: SMD Case: FBGA24 Operating temperature: -40...105°C Kind of package: reel; tape Memory: 256Mb DRAM Supply voltage: 1.7...2V DC Type of integrated circuit: DRAM memory Interface: HyperBus Kind of memory: DRAM Access time: 35ns Clock frequency: 200MHz |
Produkt ist nicht verfügbar |
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IDH08G65C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; Ir: 62uA Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward voltage: 1.25V Max. forward impulse current: 37A Leakage current: 62µA Power dissipation: 63W Kind of package: tube Heatsink thickness: 1.17...1.37mm |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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S25HS02GTDPBHB053 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial Operating voltage: 1.7...2V Case: BGA24 Mounting: SMD Operating temperature: -40...105°C Operating frequency: 133MHz Kind of interface: serial Memory: 2Gb FLASH Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash |
Produkt ist nicht verfügbar |
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S25HS02GTDPBHV053 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial Operating voltage: 1.7...2V Case: BGA24 Mounting: SMD Operating temperature: -40...105°C Operating frequency: 133MHz Kind of interface: serial Memory: 2Gb FLASH Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash |
Produkt ist nicht verfügbar |
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S28HS02GTFPBHV050 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial Operating voltage: 1.7...2V Case: BGA24 Mounting: SMD Operating temperature: -40...105°C Operating frequency: 166MHz Kind of interface: serial Memory: 2Gb FLASH Type of integrated circuit: FLASH memory Interface: octal Kind of memory: NOR Flash |
Produkt ist nicht verfügbar |
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S28HS02GTFPBHV053 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial Operating voltage: 1.7...2V Case: BGA24 Mounting: SMD Operating temperature: -40...105°C Operating frequency: 166MHz Kind of interface: serial Memory: 2Gb FLASH Type of integrated circuit: FLASH memory Interface: octal Kind of memory: NOR Flash |
Produkt ist nicht verfügbar |
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IRLHS2242TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; 2.1W; PQFN3.3X3.3 Case: PQFN3.3X3.3 Mounting: SMD Kind of package: reel Polarisation: unipolar Features of semiconductor devices: logic level Technology: HEXFET® Kind of channel: enhanced Drain-source voltage: -20V Drain current: -7.2A Type of transistor: P-MOSFET Power dissipation: 2.1W |
auf Bestellung 3894 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRFR8405 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 804A; 163W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 804A Power dissipation: 163W Case: DPAK Gate-source voltage: ±20V On-state resistance: 1.65mΩ Mounting: SMD Gate charge: 103nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PVI5013RSPBF | INFINEON TECHNOLOGIES |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: photodiode Insulation voltage: 3.75kV Case: Gull wing 8 Turn-on time: 5ms Turn-off time: 25µs Manufacturer series: PVI5013RPbF |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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HFA15TB60PBF | INFINEON TECHNOLOGIES |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; Ufmax: 1.7V; 29W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Kind of package: tube Case: TO220AC Max. forward voltage: 1.7V Power dissipation: 29W Reverse recovery time: 74ns |
Produkt ist nicht verfügbar |
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IPB180P04P403ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -180A; 150W; PG-TO263-7 Case: PG-TO263-7 Mounting: SMD Technology: OptiMOS™ P2 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -40V Drain current: -180A On-state resistance: 2.8mΩ Type of transistor: P-MOSFET Power dissipation: 150W Polarisation: unipolar Gate charge: 0.19µC |
Produkt ist nicht verfügbar |
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CY62168EV30LL-45BVXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
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CY62168EV30LL-45BVXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
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CY14B104M-ZSP25XI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 25ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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CY14B104M-ZSP25XIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 25ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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CY14B104M-ZSP45XI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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CY14B104M-ZSP45XIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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CY14B104NA-ZSP25XI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 25ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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CY14B104NA-ZSP45XI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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CY14B104NA-ZSP25XIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 25ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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CY14B104NA-ZSP45XIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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CY14B108M-ZSP25XI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 25ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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CY14B108M-ZSP25XIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 25ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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CY14B108N-ZSP25XI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 25ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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CY14B108N-ZSP45XI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP54 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 45ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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CY14B108N-ZSP45XIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP54 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 45ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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CY14B116N-ZSP25XI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 25ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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CY14B116N-ZSP25XIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 25ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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CY7C10612G30-10ZSXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; TSOP54 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 10ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Supply voltage: 3...3.6V DC Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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PVI5013RS-TPBF | INFINEON TECHNOLOGIES |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: photodiode Insulation voltage: 3.75kV Case: Gull wing 8 Turn-on time: 5ms Turn-off time: 0.25ms Manufacturer series: PVI5013RPbF |
Produkt ist nicht verfügbar |
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CY14MB064Q2A-SXQ | INFINEON TECHNOLOGIES |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; serial; 40MHz Memory: 64kb SRAM Operating temperature: -40...105°C Supply voltage: 2.7...3.6V DC Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 8kx8bit Frequency: 40MHz Case: SOIC8 Kind of interface: serial |
Produkt ist nicht verfügbar |
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CY14MB064Q2A-SXQT | INFINEON TECHNOLOGIES |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; serial; 40MHz Memory: 64kb SRAM Operating temperature: -40...105°C Supply voltage: 2.7...3.6V DC Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 8kx8bit Frequency: 40MHz Case: SOIC8 Kind of interface: serial |
Produkt ist nicht verfügbar |
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CY7C1360C-166AXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 3.135...3.6V DC Frequency: 166MHz |
Produkt ist nicht verfügbar |
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CY7C1360C-200AXC | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Supply voltage: 3.135...3.6V DC Frequency: 200MHz |
Produkt ist nicht verfügbar |
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CY7C1360C-200AXCT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Supply voltage: 3.135...3.6V DC Frequency: 200MHz |
Produkt ist nicht verfügbar |
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CY7C1361C-100AXE | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷125°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Supply voltage: 3.135...3.6V DC Frequency: 100MHz |
Produkt ist nicht verfügbar |
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CY7C1361C-100AXET | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷125°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Supply voltage: 3.135...3.6V DC Frequency: 100MHz |
Produkt ist nicht verfügbar |
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CY7C1361C-100BZXE | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; FBGA165; parallel; -40÷125°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Supply voltage: 3.135...3.6V DC Frequency: 100MHz |
Produkt ist nicht verfügbar |
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CY7C1361C-133AXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 3.135...3.6V DC Frequency: 133MHz |
Produkt ist nicht verfügbar |
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IPI65R190C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.2A Power dissipation: 151W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IPI65R190CFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 17.5A Power dissipation: 151W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IPL65R190E6AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.2A Power dissipation: 151W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFHS9301TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 2.1W; PQFN2X2 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -6A Power dissipation: 2.1W Case: PQFN2X2 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFHS9351TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.4W; PQFN2X2 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.3A Power dissipation: 1.4W Case: PQFN2X2 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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S29PL127J60BFI040 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 60ns; FBGA80; parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Interface: CFI; parallel Kind of memory: NOR Flash Access time: 60ns Kind of interface: parallel Memory: 128Mb FLASH Case: FBGA80 Type of integrated circuit: FLASH memory |
Produkt ist nicht verfügbar |
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S29PL127J65BFW040 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 65ns; FBGA80; parallel Mounting: SMD Operating temperature: -25...85°C Operating voltage: 2.7...3.6V Interface: CFI; parallel Kind of memory: NOR Flash Access time: 65ns Kind of interface: parallel Memory: 128Mb FLASH Case: FBGA80 Type of integrated circuit: FLASH memory |
Produkt ist nicht verfügbar |
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S29PL127J70BFI040 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 70ns; FBGA80; parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Interface: CFI; parallel Kind of memory: NOR Flash Access time: 70ns Kind of interface: parallel Memory: 128Mb FLASH Case: FBGA80 Type of integrated circuit: FLASH memory |
Produkt ist nicht verfügbar |
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S29PL127J70BFI043 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 70ns; FBGA80; parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Interface: CFI; parallel Kind of memory: NOR Flash Access time: 70ns Kind of interface: parallel Memory: 128Mb FLASH Case: FBGA80 Type of integrated circuit: FLASH memory |
Produkt ist nicht verfügbar |
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CY7C199D-10VXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 10ns; SOJ28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Access time: 10ns Case: SOJ28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
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CY14B256PA-SFXI | INFINEON TECHNOLOGIES |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC16; -40÷85°C; serial Memory: 256kb SRAM Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 32kx8bit Frequency: 40MHz Case: SOIC16 Kind of interface: serial |
Produkt ist nicht verfügbar |
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CY7C1325G-133AXC | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx18bit; TQFP100; parallel; 0÷70°C Operating temperature: 0...70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx18bit Kind of interface: parallel Part status: Not recommended for new designs Memory: 4Mb SRAM Mounting: SMD Case: TQFP100 Supply voltage: 3.135...3.6V DC Frequency: 133MHz |
Produkt ist nicht verfügbar |
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CY7C1325G-133AXCT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx18bit; TQFP100; parallel; 0÷70°C Operating temperature: 0...70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx18bit Kind of interface: parallel Part status: Not recommended for new designs Memory: 4Mb SRAM Mounting: SMD Case: TQFP100 Supply voltage: 3.135...3.6V DC Frequency: 133MHz |
Produkt ist nicht verfügbar |
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CY7C1327G-133AXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx18bit; TQFP100; parallel; -40÷85°C Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx18bit Kind of interface: parallel Part status: Not recommended for new designs Memory: 4Mb SRAM Mounting: SMD Case: TQFP100 Supply voltage: 3.135...3.6V DC Frequency: 133MHz |
Produkt ist nicht verfügbar |
CY15B004J-SXA |
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.7...3.65V DC
Interface: I2C
Memory: 4kb FRAM
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 1MHz
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.7...3.65V DC
Interface: I2C
Memory: 4kb FRAM
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 1MHz
Produkt ist nicht verfügbar
CY15B004J-SXAT |
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.7...3.65V DC
Interface: I2C
Kind of package: reel; tape
Memory: 4kb FRAM
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 1MHz
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.7...3.65V DC
Interface: I2C
Kind of package: reel; tape
Memory: 4kb FRAM
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 1MHz
Produkt ist nicht verfügbar
CY15B004J-SXE |
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 3...3.6V DC
Interface: I2C
Memory: 4kb FRAM
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 3.4MHz
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 3...3.6V DC
Interface: I2C
Memory: 4kb FRAM
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 3.4MHz
Produkt ist nicht verfügbar
CY15B004J-SXET |
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 3...3.6V DC
Interface: I2C
Kind of package: reel; tape
Memory: 4kb FRAM
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 3.4MHz
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 3...3.6V DC
Interface: I2C
Kind of package: reel; tape
Memory: 4kb FRAM
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 3.4MHz
Produkt ist nicht verfügbar
CY15B004Q-SXET |
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SOIC8
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 3...3.6V DC
Interface: SPI
Kind of package: reel; tape
Memory: 4kb FRAM
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 16MHz
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SOIC8
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 3...3.6V DC
Interface: SPI
Kind of package: reel; tape
Memory: 4kb FRAM
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 16MHz
Produkt ist nicht verfügbar
S27KS0642GABHV023 |
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Mounting: SMD
Case: FBGA24
Operating temperature: -40...105°C
Kind of package: reel; tape
Memory: 64Mb DRAM
Supply voltage: 1.7...2V DC
Type of integrated circuit: DRAM memory
Interface: HyperBus
Kind of memory: DRAM
Access time: 35ns
Clock frequency: 200MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Mounting: SMD
Case: FBGA24
Operating temperature: -40...105°C
Kind of package: reel; tape
Memory: 64Mb DRAM
Supply voltage: 1.7...2V DC
Type of integrated circuit: DRAM memory
Interface: HyperBus
Kind of memory: DRAM
Access time: 35ns
Clock frequency: 200MHz
Produkt ist nicht verfügbar
S70KS1282GABHV023 |
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Mounting: SMD
Case: FBGA24
Operating temperature: -40...105°C
Kind of package: reel; tape
Memory: 128Mb DRAM
Supply voltage: 1.7...2V DC
Type of integrated circuit: DRAM memory
Interface: HyperBus
Kind of memory: DRAM
Access time: 35ns
Clock frequency: 200MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Mounting: SMD
Case: FBGA24
Operating temperature: -40...105°C
Kind of package: reel; tape
Memory: 128Mb DRAM
Supply voltage: 1.7...2V DC
Type of integrated circuit: DRAM memory
Interface: HyperBus
Kind of memory: DRAM
Access time: 35ns
Clock frequency: 200MHz
Produkt ist nicht verfügbar
S80KS5122GABHV023 |
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Mounting: SMD
Case: FBGA24
Operating temperature: -40...105°C
Kind of package: reel; tape
Memory: 256Mb DRAM
Supply voltage: 1.7...2V DC
Type of integrated circuit: DRAM memory
Interface: HyperBus
Kind of memory: DRAM
Access time: 35ns
Clock frequency: 200MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Mounting: SMD
Case: FBGA24
Operating temperature: -40...105°C
Kind of package: reel; tape
Memory: 256Mb DRAM
Supply voltage: 1.7...2V DC
Type of integrated circuit: DRAM memory
Interface: HyperBus
Kind of memory: DRAM
Access time: 35ns
Clock frequency: 200MHz
Produkt ist nicht verfügbar
IDH08G65C6XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; Ir: 62uA
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 37A
Leakage current: 62µA
Power dissipation: 63W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; Ir: 62uA
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 37A
Leakage current: 62µA
Power dissipation: 63W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 4.08 EUR |
21+ | 3.42 EUR |
28+ | 2.56 EUR |
S25HS02GTDPBHB053 |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
S25HS02GTDPBHV053 |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
S28HS02GTFPBHV050 |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
S28HS02GTFPBHV053 |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
IRLHS2242TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; 2.1W; PQFN3.3X3.3
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: -20V
Drain current: -7.2A
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; 2.1W; PQFN3.3X3.3
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: -20V
Drain current: -7.2A
Type of transistor: P-MOSFET
Power dissipation: 2.1W
auf Bestellung 3894 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
162+ | 0.44 EUR |
218+ | 0.33 EUR |
332+ | 0.22 EUR |
350+ | 0.2 EUR |
AUIRFR8405 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 804A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 103nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 804A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 103nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
PVI5013RSPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 5ms
Turn-off time: 25µs
Manufacturer series: PVI5013RPbF
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 5ms
Turn-off time: 25µs
Manufacturer series: PVI5013RPbF
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 14.3 EUR |
HFA15TB60PBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; Ufmax: 1.7V; 29W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Power dissipation: 29W
Reverse recovery time: 74ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; Ufmax: 1.7V; 29W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Power dissipation: 29W
Reverse recovery time: 74ns
Produkt ist nicht verfügbar
IPB180P04P403ATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -180A; 150W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ P2
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -40V
Drain current: -180A
On-state resistance: 2.8mΩ
Type of transistor: P-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 0.19µC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -180A; 150W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ P2
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -40V
Drain current: -180A
On-state resistance: 2.8mΩ
Type of transistor: P-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 0.19µC
Produkt ist nicht verfügbar
CY62168EV30LL-45BVXIT |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
CY62168EV30LL-45BVXI |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
CY14B104M-ZSP25XI |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104M-ZSP25XIT |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104M-ZSP45XI |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104M-ZSP45XIT |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104NA-ZSP25XI |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104NA-ZSP45XI |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104NA-ZSP25XIT |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104NA-ZSP45XIT |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108M-ZSP25XI |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108M-ZSP25XIT |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108N-ZSP25XI |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108N-ZSP45XI |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108N-ZSP45XIT |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B116N-ZSP25XI |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B116N-ZSP25XIT |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY7C10612G30-10ZSXI |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
PVI5013RS-TPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 5ms
Turn-off time: 0.25ms
Manufacturer series: PVI5013RPbF
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 5ms
Turn-off time: 0.25ms
Manufacturer series: PVI5013RPbF
Produkt ist nicht verfügbar
CY14MB064Q2A-SXQ |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; serial; 40MHz
Memory: 64kb SRAM
Operating temperature: -40...105°C
Supply voltage: 2.7...3.6V DC
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 8kx8bit
Frequency: 40MHz
Case: SOIC8
Kind of interface: serial
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; serial; 40MHz
Memory: 64kb SRAM
Operating temperature: -40...105°C
Supply voltage: 2.7...3.6V DC
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 8kx8bit
Frequency: 40MHz
Case: SOIC8
Kind of interface: serial
Produkt ist nicht verfügbar
CY14MB064Q2A-SXQT |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; serial; 40MHz
Memory: 64kb SRAM
Operating temperature: -40...105°C
Supply voltage: 2.7...3.6V DC
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 8kx8bit
Frequency: 40MHz
Case: SOIC8
Kind of interface: serial
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; serial; 40MHz
Memory: 64kb SRAM
Operating temperature: -40...105°C
Supply voltage: 2.7...3.6V DC
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 8kx8bit
Frequency: 40MHz
Case: SOIC8
Kind of interface: serial
Produkt ist nicht verfügbar
CY7C1360C-166AXI |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Frequency: 166MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Frequency: 166MHz
Produkt ist nicht verfügbar
CY7C1360C-200AXC |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
CY7C1360C-200AXCT |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
CY7C1361C-100AXE |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Frequency: 100MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Frequency: 100MHz
Produkt ist nicht verfügbar
CY7C1361C-100AXET |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Frequency: 100MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Frequency: 100MHz
Produkt ist nicht verfügbar
CY7C1361C-100BZXE |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; FBGA165; parallel; -40÷125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Frequency: 100MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; FBGA165; parallel; -40÷125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Frequency: 100MHz
Produkt ist nicht verfügbar
CY7C1361C-133AXI |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
IPI65R190C6XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPI65R190CFDXKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPL65R190E6AUMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFHS9301TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 2.1W; PQFN2X2
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Power dissipation: 2.1W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 2.1W; PQFN2X2
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Power dissipation: 2.1W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFHS9351TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.4W; PQFN2X2
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.4W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.4W; PQFN2X2
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.4W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
S29PL127J60BFI040 |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 60ns; FBGA80; parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 60ns
Kind of interface: parallel
Memory: 128Mb FLASH
Case: FBGA80
Type of integrated circuit: FLASH memory
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 60ns; FBGA80; parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 60ns
Kind of interface: parallel
Memory: 128Mb FLASH
Case: FBGA80
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
S29PL127J65BFW040 |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 65ns; FBGA80; parallel
Mounting: SMD
Operating temperature: -25...85°C
Operating voltage: 2.7...3.6V
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 65ns
Kind of interface: parallel
Memory: 128Mb FLASH
Case: FBGA80
Type of integrated circuit: FLASH memory
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 65ns; FBGA80; parallel
Mounting: SMD
Operating temperature: -25...85°C
Operating voltage: 2.7...3.6V
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 65ns
Kind of interface: parallel
Memory: 128Mb FLASH
Case: FBGA80
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
S29PL127J70BFI040 |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 70ns; FBGA80; parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 128Mb FLASH
Case: FBGA80
Type of integrated circuit: FLASH memory
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 70ns; FBGA80; parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 128Mb FLASH
Case: FBGA80
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
S29PL127J70BFI043 |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 70ns; FBGA80; parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 128Mb FLASH
Case: FBGA80
Type of integrated circuit: FLASH memory
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 70ns; FBGA80; parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 128Mb FLASH
Case: FBGA80
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
CY7C199D-10VXIT |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
CY14B256PA-SFXI |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC16; -40÷85°C; serial
Memory: 256kb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 32kx8bit
Frequency: 40MHz
Case: SOIC16
Kind of interface: serial
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC16; -40÷85°C; serial
Memory: 256kb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 32kx8bit
Frequency: 40MHz
Case: SOIC16
Kind of interface: serial
Produkt ist nicht verfügbar
CY7C1325G-133AXC |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx18bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Kind of interface: parallel
Part status: Not recommended for new designs
Memory: 4Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx18bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Kind of interface: parallel
Part status: Not recommended for new designs
Memory: 4Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
CY7C1325G-133AXCT |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx18bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Kind of interface: parallel
Part status: Not recommended for new designs
Memory: 4Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx18bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Kind of interface: parallel
Part status: Not recommended for new designs
Memory: 4Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
CY7C1327G-133AXI |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx18bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Kind of interface: parallel
Part status: Not recommended for new designs
Memory: 4Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx18bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Kind of interface: parallel
Part status: Not recommended for new designs
Memory: 4Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar